RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) Features:

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) Features:
PD - 93821A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
IRHNJ7230
200V, N-CHANNEL
®
™
RAD-Hard HEXFET TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHNJ7230
100K Rads (Si)
IRHNJ3230
300K Rads (Si)
RDS(on)
0.40Ω
0.40Ω
ID
9.4A
9.4A
IRHNJ4230
500K Rads (Si)
0.40Ω
9.4A
IRHNJ8230
1000K Rads (Si)
0.53Ω
9.4A
SMD-0.5
International Rectifier’s RAD-HardTM HEXFET® technology
technology provides high performance power MOSFETs
for space applications. This technology has over a
decade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC
to DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling
and temperature stability of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Surface Mount
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
9.4
6.0
37
75
0.6
±20
150
5.5
7.5
16
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
300 (for 5s)
1.0 (Typical)
C
g
For footnotes refer to the last page
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1
05/16/06
IRHNJ7230
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Drain-to-Source Breakdown Voltage
200
—
—
V
—
0.23
—
V/°C
—
—
2.0
2.5
—
—
—
—
—
—
—
—
0.40
0.49
4.0
—
25
250
∆BVDSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Typ Max Units
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
50
10
25
35
75
70
60
—
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1200
250
63
—
—
—
Ω
V
S( )
Ω
BVDSS
µA
nA
nC
ns
nH
pF
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 6.0A
Ã
VGS = 12V, ID = 9.4A
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 6.0A Ã
VDS= 160V, VGS=0V
VDS = 160V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 12V, ID = 9.4A
VDS = 100V
VDD = 100V, ID = 9.4A,
RG = 7.5Ω
VGS = 12V
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
trr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
9.4
37
1.4
460
2.4
Test Conditions
A
V
ns
µC
Tj = 25°C, IS = 9.4A, VGS = 0V Ã
Tj = 25°C, IF = 9.4A, di/dt ≤ 100A/µs
VDD ≤ 25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
—
—
1.67
Test Conditions
°C/W
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHNJ7230
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
100K Rads(Si)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage Ã
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source Ã
On-State Resistance (TO-3)
Static Drain-to-Source Ã
On-State Resistance (SMD-0.5)
Diode Forward Voltage Ã
Units
Test Conditions
V
µA
Ω
V GS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS = 160V, VGS =0V
V GS = 12V, ID = 6.0A
0.53
Ω
VGS = 12V, ID = 6.0A
1.4
V
VGS = 0V, IS = 9.4A
300K - 1000K Rads (Si)2
Min
Max
Min
Max
200
2.0
—
—
—
—
—
4.0
100
-100
25
0.41
200
1.25
—
—
—
—
—
4.5
100
-100
25
0.54
nA
—
0.40
—
—
1.4
—
1. Part number IRHNJ7230
2. Part numbers IRHNJ3230, IRHNJ4230, IRHNJ8230
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Cu
Br
LET
(MeV/(mg/cm2))
28
36.8
VDS (V)
Range
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
43
190
180
170
125
—
39
100
100
100
50
—
Energy
(MeV)
285
305
200
VDS
150
Cu
Br
100
50
0
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNJ7230
100
Pre-Irradiation
100
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
10
5.0V
20µs PULSE WIDTH
TJ = 25 °C
1
1
10
10
5.0V
1
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25 ° C
TJ = 150 ° C
10
V DS = 50V
20µs PULSE WIDTH
7
8
9
10
11
12
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
100
Fig 2. Typical Output Characteristics
100
6
10
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1
20µs PULSE WIDTH
TJ = 150 °C
1
100
VDS , Drain-to-Source Voltage (V)
5
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
ID = 9.4A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRHNJ7230
Pre-Irradiation
20
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
2000
1500
Ciss
1000
Coss
500
Crss
10
VDS = 160V
VDS = 100V
VDS = 40V
16
12
8
4
0
1
ID = 9.4A
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
VDS , Drain-to-Source Voltage (V)
20
30
40
50
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
ID , Drain Current (A)
-ISD , Reverse Drain Current (A)
10
10
TJ = 150 ° C
TJ = 25 ° C
1
10us
10
100us
1ms
1
0.1
0.2
V GS = 0 V
0.6
1.0
1.4
1.8
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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10ms
TC = 25 ° C
TJ = 150 ° C
Single Pulse
0.1
2.2
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHNJ7230
Pre-Irradiation
10
RD
V DS
VGS
ID , Drain Current (A)
8
D.U.T.
RG
+
-V DD
V GS
6
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4
Fig 10a. Switching Time Test Circuit
VDS
2
90%
0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10%
VGS
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1 D = 0.50
0.20
0.10
PDM
0.05
0.1
0.02
0.01
0.01
0.00001
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHNJ7230
15V
DRIVER
L
VDS
D.U.T.
RG
+
V
- DD
IAS
VGS
20V
tp
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
A
EAS , Single Pulse Avalanche Energy (mJ)
400
TOP
BOTTOM
ID
4.2A
5.9A
9.4A
300
200
100
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF
.3µF
12 V
QGS
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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D.U.T.
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHNJ7230
Pre-Irradiation
Footnotes:
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 25V, starting TJ = 25°C, L= 3.4mH,
Peak IL = 9.4A, VGS = 12V
 I SD ≤ 9.4A, di/dt ≤ 660A/µs,
VDD ≤ 200V, TJ ≤ 150°C
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
12 volt VGS applied and V DS = 0 during
irradiation per MIL-STD-750, method 1019, condition A
Å Total Dose Irradiation with VDS Bias.
160 volt V DS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A
Case Outline and Dimensions — SMD-0.5
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 05/2006
8
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