0.4-GHz TO 4-GHz QUADRATURE MODULATOR TRF370317 FEATURES APPLICATIONS

0.4-GHz TO 4-GHz QUADRATURE MODULATOR TRF370317 FEATURES APPLICATIONS

TRF370317 www.ti.com

SLWS209B – MARCH 2008 – REVISED JANUARY 2010

0.4-GHz TO 4-GHz QUADRATURE MODULATOR

Check for Samples: TRF370317

1

FEATURES

2

• 76-dBc Single-Carrier WCDMA ACPR at –8 dBm Channel Power

• Low Noise Floor: –163 dBm/Hz

• OIP3 of 26.5 dBm

• P1dB of 12 dBm

• Unadjusted Carrier Feedthrough of –40 dBm

• Unadjusted Side-Band Suppression of –45 dBc

• Single Supply: 4.5-V–5.5-V Operation

• Silicon Germanium Technology

• 1.7-V CM at I, Q Baseband Inputs

RGE PACKAGE

(TOP VIEW)

APPLICATIONS

• Cellular Base Station Transceiver

• CDMA: IS95, UMTS, CDMA2000, TD-SCDMA

• TDMA: GSM, IS-136, EDGE/UWC-136

• Multicarrier GSM

• WiMAX: 802.16d/e

• 3GPP: LTE

• Wireless MAN Wideband Transceivers

NC

GND

LOP

LON

GND

NC

1

2

3

4

5

6

18

VCC

17

GND

16 RF_OUT

15 NC

14 GND

13

NC

P0024-04

DESCRIPTION

The TRF370317 is a low-noise direct quadrature modulator, capable of converting complex modulated signals from baseband or IF directly up to RF. The TRF370317 is a high-performance, superior-linearity device that is ideal to RF frequencies of 400 MHz through 4 GHz. The modulator is implemented as a double-balanced mixer.

The RF output block consists of a differential to single-ended converter and an RF amplifier capable of driving a single-ended 50Ω load without any need of external components. The TRF370317 requires a 1.7-V common-mode voltage for optimum linearity performance.

1

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas

Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2

All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

Copyright © 2008–2010, Texas Instruments Incorporated

TRF370317

SLWS209B – MARCH 2008 – REVISED JANUARY 2010

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This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

Functional Block Diagram

NC 1

GND 2

LOP 3

LON 4

GND

5

NC 6

0/90

S

18 VCC

17

GND

16 RF_OUT

15 NC

14 GND

13 NC

B0175-01

NOTE: NC = No connection

2

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NAME

BBIN

BBIP

BBQN

BBQP

GND

LON

LOP

NC

RF_OUT

VCC

TERMINAL

NO.

22

21

9

10

2, 5, 8,11,

12, 14, 17,

19, 20, 23

4

3

1, 6, 7, 13,

15

16

18, 24

I

I

O

I/O

I

I

I

I

DEVICE INFORMATION

TERMINAL FUNCTIONS

DESCRIPTION

In-phase negative input

In-phase positive input

Quadrature-phase negative input

Quadrature-phase positive input

Ground

Local oscillator negative input

Local oscillator positive input

No connect

RF output

Power supply

ABSOLUTE MAXIMUM RATINGS

(1)

over operating free-air temperature range (unless otherwise noted)

T

J

T

T

A stg

Supply voltage range

Operating virtual junction temperature range

Operating ambient temperature range

Storage temperature range

Human body model (HBM)

ESD Electrostatic discharge ratings

Charged device model (CDM)

VALUE

(2)

–0.3 V to 6

–40 to 150

–40 to 85

–65 to 150

75

75

UNIT

V

°C

°C

°C

V

V

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating

Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) All voltage values are with respect to network ground terminal.

RECOMMENDED OPERATING CONDITIONS

over operating free-air temperature range (unless otherwise noted)

V

CC

Power-supply voltage

MIN

4.5

NOM

5

MAX

5.5

UNIT

V

THERMAL CHARACTERISTICS

R q JA

R q

JC

PARAMETER

Thermal resistance, junction-to-case

TEST CONDITIONS

Thermal resistance, junction-to-ambient High-K board, still air

VALUE

29.4

18.6

UNIT

°C/W

°C/W

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ELECTRICAL CHARACTERISTICS

over operating free-air temperature range (unless otherwise noted)

PARAMETER TEST CONDITIONS

DC Parameters

I

CC

Total supply current (1.7 V CM)

LO Input (50Ω , Single-Ended)

f

LO

LO frequency range

LO input power

LO port return loss

Baseband Inputs

V

CM

BW

Z

I(single ended)

I and Q input dc common voltage

1-dB input frequency bandwidth

Input impedance, resistance

Input impedance, parallel capacitance

T

A

= 25°C

MIN

0.4

–5

350

TYP

205

0

15

1.7

5

3

245

www.ti.com

MAX UNIT

mA

4

12

GHz dBm dB

MHz k Ω pF

ELECTRICAL CHARACTERISTICS

over recommended operating conditions, power supply = 5 V, T

A mVrms single-ended in quadrature, f

BB

= 25°C, V

= 50 kHz (unless otherwise noted)

CM

= 1.7 V, f

LO

= 400 MHz at 8 dBm, V inBB

= 98

RF Output Parameters

G

P1dB

IP3

IP2

PARAMETER

Voltage gain

Output compression point

Output IP3

Output IP2

Carrier feedthrough

Sideband suppression

TEST CONDITIONS

Output rms voltage over input I (or Q) rms voltage f

BB

= 4.5, 5.5 MHz f

BB

= 4.5, 5.5 MHz

Unadjusted

Unadjusted

MIN TYP

–1.9

11

24.5

68

–38

–40

MAX UNIT

dB dBm dBm dBm dBm dBc

4

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ELECTRICAL CHARACTERISTICS

over recommended operating conditions, power supply = 5 V, T

A mVrms single-ended in quadrature, f

BB

= 25°C, V

= 50 kHz (unless otherwise noted)

CM

= 1.7 V, f

LO

= 945.6 MHz at 8 dBm, V inBB

= 98

RF Output Parameters

MIN

G

P1dB

IP3

IP2

EVM

PARAMETER

Voltage gain

Output compression point

Output IP3

TEST CONDITIONS

Output rms voltage over input I (or Q) rms voltage

Output IP2

Carrier feedthrough

Sideband suppression f

BB

= 4.5, 5.5 MHz f

BB

= 4.5, 5.5 MHz

Unadjusted

Unadjusted

Output return loss

Output noise floor ≥ 13 MHz offset from f

LO

; P out

= –5 dBm

Error vector magnitude (rms) 1 EDGE signal, P out

= –5 dBm

(1)

TYP

–2.5

11

25

65

–40

–42

9

–163

0.64%

MAX UNIT

dB dBm dBm dBm dBm dBc dB dBm/Hz

(1) The contribution from the source of about 0.28% is not de-embedded from the measurement.

ELECTRICAL CHARACTERISTICS

over recommended operating conditions, power supply = 5 V, T

A mVrms single-ended in quadrature, f

BB

= 25°C, V

= 50 kHz (unless otherwise noted)

CM

= 1.7 V, f

LO

= 1800 MHz at 8 dBm, V inBB

= 98

RF Output Parameters

MIN

G

P1dB

IP3

IP2

EVM

PARAMETER

Voltage gain

TEST CONDITIONS

Output rms voltage over input I (or Q) rms voltage

Output compression point

Output IP3

Output IP2

Carrier feedthrough

Sideband suppression f

BB

= 4.5, 5.5 MHz f

BB

= 4.5, 5.5 MHz

Unadjusted

Unadjusted

Output return loss

Output noise floor ≥ 13 MHz offset from f

LO

; P out

= –5 dBm

Error vector magnitude (rms) 1 EDGE signal, P out

= –5 dBm

(1)

TYP

–2.5

12

26

60

–40

–50

8

–162

0.41%

MAX UNIT

dB dBm dBm dBm dBm dBc dB dBm/Hz

(1) The contribution from the source of about 0.28% is not de-embedded from the measurement.

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ELECTRICAL CHARACTERISTICS

over recommended operating conditions, power supply = 5 V, T

A mVrms single-ended in quadrature, f

BB

= 25°C, V

= 50 kHz (unless otherwise noted)

CM

= 1.7 V, f

LO

= 1960 MHz at 8 dBm, V inBB

= 98

RF Output Parameters

MIN

G

P1dB

IP3

IP2

EVM

ACPR

(2)

PARAMETER

Voltage gain

Output compression point

Output IP3

TEST CONDITIONS

Output rms voltage over input I (or Q) rms voltage

Output IP2

Carrier feedthrough

Sideband suppression

Output return loss f f

BB

= 4.5, 5.5 MHz

BB

= 4.5, 5.5 MHz

Unadjusted

Unadjusted

Output noise floor ≥ 13 MHz offset from f

LO

; P out

= –5 dBm

Error vector magnitude (rms) 1 EDGE signal, P out

= –5 dBm

(1)

Adjacent-channel power ratio

Alternate-channel power ratio

1 WCDMA signal; P out

= –8 dBm

2 WCDMA signals; P out

= –11 dBm per carrier

4 WCDMA signals; P out

= –14 dBm per carrier

1 WCDMA signal; P out

= –8 dBm

2 WCDMA signals; P out

= –11 dBm per carrier

4 WCDMA signals; P out

= –14 dBm per carrier

23.5

TYP

–2.5

12

26.5

60

–38

–50

8

–162.5

0.43%

–74

–68

–67

–78

–72

–69

MAX UNIT

dB dBm dBm dBm dBm dBc dB dBm/Hz dBc dBc

(1) The contribution from the source of about 0.28% is not de-embedded from the measurement.

(2) Measured with DAC5687 as source generator

ELECTRICAL CHARACTERISTICS

over recommended operating conditions, power supply = 5 V, T

A mVrms single-ended in quadrature, f

BB

= 25°C, V

= 50 kHz (unless otherwise noted)

CM

= 1.7 V, f

LO

= 2140 MHz at 8 dBm, V inBB

= 98

RF Output Parameters

G

P1dB

IP3

IP2

ACPR

(1)

PARAMETER

Voltage gain

Output compression point

Output IP3

Output IP2

Carrier feedthrough

Sideband suppression

Output return loss

Output noise floor

Adjacent-channel power ratio

Alternate-channel power ratio

TEST CONDITIONS

Output rms voltage over input I (or Q) rms voltage f

BB

= 4.5, 5.5 MHz f

BB

= 4.5, 5.5 MHz

Unadjusted

Unadjusted

≥ 13 MHz offset from f

LO

; P out

= –5 dBm

1 WCDMA signal; P out

= –8 dBm

2 WCDMA signal; P out

= –11 dBm per carrier

4 WCDMA signals; P out

= –14 dBm per carrier

1 WCDMA signal; P out

= –8 dBm

2 WCDMA signal; P out

= –11 dBm

4 WCDMA signals; P out

= –14 dBm per carrier

MIN TYP

–2.4

12

26.5

66

–38

–50

8.5

–162.5

–72

–67

–66

–78

–74

–68

MAX UNIT

dB dBm dBm dBm dBm dBc dB dBm/Hz dBc dBc

(1) Measured with DAC5687 as source generator

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SLWS209B – MARCH 2008 – REVISED JANUARY 2010

ELECTRICAL CHARACTERISTICS

over recommended operating conditions, power supply = 5 V, T

A mVrms single-ended in quadrature, f

BB

= 25°C, V

= 50 kHz (unless otherwise noted)

CM

= 1.7 V, f

LO

= 2500 MHz at 8 dBm, V inBB

= 98

RF Output Parameters

G

P1dB

IP3

IP2

EVM

PARAMETER

Voltage gain

Output compression point

Output IP3

Output IP2

Carrier feedthrough

Sideband suppression

Error vector magnitude (rms)

TEST CONDITIONS

Output rms voltage over input I (or Q) rms voltage f

BB

= 4.5, 5.5 MHz f

BB

= 4.5, 5.5 MHz

Unadjusted

Unadjusted

WiMAX 5-MHz carrier, P out

= –8 dBm, LO = 8 dBm

WiMAX 5-MHz carrier, P out

= 0 dBm, LO = 8 dBm

MIN TYP

–1.6

13

29

65

–37

–47

–47

–45

MAX UNIT

dB dBm dBm dBm dBm dBc dB dB

ELECTRICAL CHARACTERISTICS

over recommended operating conditions, power supply = 5 V, T

A mVrms single-ended in quadrature, f

BB

= 25°C, V

= 50 kHz (unless otherwise noted)

CM

= 1.7 V, f

LO

= 3500 MHz at 8 dBm, V inBB

= 98

RF Output Parameters

G

P1dB

IP3

IP2

EVM

PARAMETER

Voltage gain

Output compression point

Output IP3

Output IP2

Carrier feedthrough

Sideband suppression

Error vector magnitude (rms)

TEST CONDITIONS

Output rms voltage over input I (or Q) rms voltage f

BB

= 4.5, 5.5 MHz f

BB

= 4.5, 5.5 MHz

Unadjusted

Unadjusted

WiMAX 5-MHz carrier, P out

= –8 dBm, LO = 6 dBm

WiMAX 5-MHz carrier, P out

= 0 dBm, LO = 6 dBm

MIN TYP

0.6

13.5

25

65

–35

–36

–47

–43

MAX UNIT

dB dBm dBm dBm dBm dBc dB dB

ELECTRICAL CHARACTERISTICS

over recommended operating conditions, power supply = 5 V, T

A mVrms single-ended in quadrature, f

BB

= 25°C, V

= 50 kHz (unless otherwise noted)

CM

= 1.7 V, f

LO

= 4000 MHz at 8 dBm, V inBB

= 98

RF Output Parameters

G

P1dB

IP3

IP2

PARAMETER

Voltage gain

Output compression point

Output IP3

Output IP2

Carrier feedthrough

Sideband suppression

TEST CONDITIONS

Output rms voltage over input I (or Q) rms voltage f

BB

= 4.5, 5.5 MHz f

BB

= 4.5, 5.5 MHz

Unadjusted

Unadjusted

MIN TYP

0.2

12

22.5

60

–36

–36

MAX UNIT

dB dBm dBm dBm dBm dBc

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TYPICAL CHARACTERISTICS

V

CM

= 1.7 V, V inBB

= 98 mVrms single-ended sine wave in quadrature, V

CC

= 5 V, LO power = 8 dBm (single-ended), f kHz (unless otherwise noted).

BB

= 50

OUTPUT POWER vs

BASEBAND VOLTAGE

OUTPUT POWER vs

FREQUENCY AND TEMPERATURE

15

0

−1

10

−2

–40

°

C

5

−3

0

−5

−10

−15

−20

0.01

0.1

V

BB

− Baseband Voltage Single-Ended RMS − V

1

G001

Figure 1.

−4

−5

−6

25

°

C

85

°

C

−7

−8

−9

V

IN

= 98 mVrms SE

LO = 8 dBm

V

CC

= 5 V

−10

0 500 1000 1500 2000 2500 3000 3500 4000 4500 f − Frequency − MHz

G002

Figure 2.

OUTPUT POWER vs

FREQUENCY AND SUPPLY VOLTAGE

0

−1

−2

−3

−4

5 V

5.5 V

−5

−6

−7

4.5 V

−8

−9

V

IN

= 98 mVrms SE

LO = 8 dBm

T

A

= 25

°

C

−10

0 500 1000 1500 2000 2500 3000 3500 4000 4500 f − Frequency − MHz

G003

Figure 3.

OUTPUT POWER vs

FREQUENCY AND LO POWER

0

−1

−2

−3

−4

–5 dBm

0 dBm

−5

−6

−7

8 dBm

−8

−9

V

IN

= 98 mVrms SE

V

T

CC

A

= 5 V

= 25

°

C

−10

0 500 1000 1500 2000 2500 3000 3500 4000 4500 f − Frequency − MHz

G004

Figure 4.

8

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TYPICAL CHARACTERISTICS (continued)

V

CM

= 1.7 V, V inBB

= 98 mVrms single-ended sine wave in quadrature, V kHz (unless otherwise noted).

CC

= 5 V, LO power = 8 dBm (single-ended), f

BB

= 50

P1dB vs

FREQUENCY AND TEMPERATURE

P1dB vs

FREQUENCY AND SUPPLY VOLTAGE

16 16

14

12

10

8

25

°

C

–40

°

C

85

°

C

14

12

10

8

5.5 V

4.5 V

5 V

6

4

8

6

12

10

16

14

2

LO = 8 dBm

V

CC

= 5 V

0

0 500 1000 1500 2000 2500 3000 3500 4000 4500 f − Frequency − MHz

G005

Figure 5.

P1dB vs

FREQUENCY AND LO POWER

–5 dBm

0 dBm

8 dBm

4

2

V

T

CC

A

= 5 V

= 25

°

C

0

0 500 1000 1500 2000 2500 3000 3500 4000 4500 f − Frequency − MHz

G007

Figure 7.

6

4

20

15

40

35

30

25

2

LO = 8 dBm

T

A

= 25

°

C

0

0 500 1000 1500 2000 2500 3000 3500 4000 4500 f − Frequency − MHz

G006

Figure 6.

OIP3 vs

FREQUENCY AND TEMPERATURE

25

°

C

–40

°

C

85

°

C

10

5 f

BB

= 4.5, 5.5 MHz

LO = 8 dBm

V

CC

= 5 V

0

0 500 1000 1500 2000 2500 3000 3500 4000 4500 f − Frequency − MHz

G008

Figure 8.

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TYPICAL CHARACTERISTICS (continued)

V

CM

= 1.7 V, V inBB

= 98 mVrms single-ended sine wave in quadrature, V kHz (unless otherwise noted).

CC

= 5 V, LO power = 8 dBm (single-ended), f

BB

= 50

OIP3 vs

FREQUENCY AND SUPPLY VOLTAGE

OIP3 vs

FREQUENCY AND LO POWER

35 35

30

25

20

5 V

4.5 V

5.5 V

15

10

5 f

BB

= 4.5, 5.5 MHz

LO = 8 dBm

T

A

= 25

°

C

0

0 500 1000 1500 2000 2500 3000 3500 4000 4500 f − Frequency − MHz

G009

Figure 9.

OIP2 vs

FREQUENCY AND TEMPERATURE

100

90

80

70

–40

°

C

85

°

C

60

50

40

25

°

C

30

20

10 f

BB

= 4.5, 5.5 MHz

LO = 8 dBm

V

CC

= 5 V

0

0 500 1000 1500 2000 2500 3000 3500 4000 4500 f − Frequency − MHz

G011

Figure 11.

30

25

20

0 dBm

–5 dBm

8 dBm

15

10

5 f

BB

= 4.5, 5.5 MHz

V

CC

T

A

= 5 V

= 25

°

C

0

0 500 1000 1500 2000 2500 3000 3500 4000 4500 f − Frequency − MHz

G010

Figure 10.

OIP2 vs

FREQUENCY AND SUPPLY VOLTAGE

100

90

5 V

80

70

60

50

4.5 V

5.5 V

40

30

20

10 f

BB

= 4.5, 5.5 MHz

LO = 8 dBm

T

A

= 25

°

C

0

0 500 1000 1500 2000 2500 3000 3500 4000 4500 f − Frequency − MHz

G012

Figure 12.

10

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TYPICAL CHARACTERISTICS (continued)

V

CM

= 1.7 V, V inBB

= 98 mVrms single-ended sine wave in quadrature, V kHz (unless otherwise noted).

CC

= 5 V, LO power = 8 dBm (single-ended), f

BB

= 50

OIP2 vs

FREQUENCY AND LO POWER

UNADJUSTED CARRIER FEEDTHROUGH vs

FREQUENCY AND TEMPERATURE

100

0

90

8 dBm

LO = 8 dBm

V

CC

= 5 V

−10

80

70

60

50

40

30

0 dBm

–5 dBm

20

10 f

BB

= 4.5, 5.5 MHz

V

T

CC

A

= 5 V

= 25

°

C

0

0 500 1000 1500 2000 2500 3000 3500 4000 4500 f − Frequency − MHz

G013

Figure 13.

−20

−30

−40

85

°

C

–40

°

C

−50

25

°

C

−60

0 500 1000 1500 2000 2500 3000 3500 4000 4500 f − Frequency − MHz

G014

Figure 14.

0

UNADJUSTED CARRIER FEEDTHROUGH vs

FREQUENCY AND SUPPLY VOLTAGE

LO = 8 dBm

T

A

= 25

°

C

−10

0

UNADJUSTED CARRIER FEEDTHROUGH vs

FREQUENCY AND LO POWER

V

CC

T

A

= 5 V

= 25

°

C

−10

−20

−20

–5 dBm

−30

−30

5.5 V

−40

−40

−50

4.5 V

5 V

−60

0 500 1000 1500 2000 2500 3000 3500 4000 4500 f − Frequency − MHz

G015

Figure 15.

−50

0 dBm

8 dBm

−60

0 500 1000 1500 2000 2500 3000 3500 4000 4500 f − Frequency − MHz

G016

Figure 16.

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TYPICAL CHARACTERISTICS (continued)

V

CM

= 1.7 V, V inBB

= 98 mVrms single-ended sine wave in quadrature, V kHz (unless otherwise noted).

CC

= 5 V, LO power = 8 dBm (single-ended), f

BB

= 50

UNADJUSTED SIDEBAND SUPPRESSION vs

FREQUENCY AND TEMPERATURE

UNADJUSTED SIDEBAND SUPPRESSION vs

FREQUENCY AND SUPPLY VOLTAGE

0

0

−10

LO = 8 dBm

P

OUT

= −3 dBm

V

CC

= 5 V

−10

LO = 8 dBm

P

T

OUT

A

= −3 dBm

= 25

°

C

−20 −20

–40

°

C

−30

−30

5.5 V

85

°

C

−40 −40

−50 −50

4.5 V

25

°

C

−60 −60

5 V

−70

−80

0 500 1000 1500 2000 2500 3000 3500 4000 4500 f − Frequency − MHz

G017

Figure 17.

−40

−50

−60

−70

UNADJUSTED SIDEBAND SUPPRESSION vs

FREQUENCY AND LO POWER

0

−10

V

CC

= 5 V

P

T

OUT

A

= −3 dBm

= 25

°

C

−20

8 dBm

−30

–5 dBm

0 dBm

−80

0 500 1000 1500 2000 2500 3000 3500 4000 4500 f − Frequency − MHz

G019

Figure 19.

−70

−80

0 500 1000 1500 2000 2500 3000 3500 4000 4500 f − Frequency − MHz

G018

Figure 18.

NOISE AT 13-MHz OFFSET (dBm/Hz) vs

FREQUENCY AND TEMPERATURE

−150

−152

−154

−156

−158

−160

V

LO = 8 dBm

P

CC

= 5 V

OUT

= −5 dBm

25

°

C

85

°

C

−162

−164

−166

–40

°

C

−168

−170

0.8

1.2

1.6

2.0

2.4

2.8

3.2

3.6

4.0

f − Frequency − GHz

G020

Figure 20.

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TYPICAL CHARACTERISTICS (continued)

V

CM

= 1.7 V, V inBB

= 98 mVrms single-ended sine wave in quadrature, V kHz (unless otherwise noted).

CC

= 5 V, LO power = 8 dBm (single-ended), f

BB

= 50

NOISE AT 13-MHz OFFSET (dBm/Hz) vs

FREQUENCY AND SUPPLY VOLTAGE

NOISE AT 13-MHz OFFSET (dBm/Hz) vs

OUTPUT POWER

−150 −150

−152

−154

LO = 8 dBm

P

T

OUT

A

= −5 dBm

= 25

°

C

−152

−154

LO = 8 dBm

V

T

CC

A

= 5 V

= 25

°

C

−156

−156

5.5 V

−158 −158

1960 MHz

−160 −160

5 V

−162

−162

−164

−164

2140 MHz

−166 4.5 V

−166

−168

−168

−170

0.8

1.2

1.6

2.0

2.4

2.8

3.2

3.6

4.0

f − Frequency − GHz

G021

Figure 21.

−170

−10 −9 −8 −7 −6 −5 −4 −3 −2 −1 0 1 2 3 4 5

P

OUT

− Output Power − dBm

G022

Figure 22.

ADJUSTED CARRIER FEEDTHROUGH vs

FREQUENCY AND TEMPERATURE

0

−10

−20

−30

−40

−50

−60

−70

−80

−90

−100

900

Adj at 942.6 MHz

LO = 8 dBm

V

CC

= 5 V

85

°

C

920 940

–40

°

C

960

25 f − Frequency − MHz

°

C

980

Figure 23.

1000

G023

ADJUSTED CARRIER FEEDTHROUGH vs

FREQUENCY AND TEMPERATURE

0

−10

−20

−30

−40

−50

−60

−70

−80

−90

−100

1910

Adj at 1960 MHz

LO = 8 dBm

V

CC

= 5 V

85

°

C

–40

°

C

25

°

C

1930 1950 1970 f − Frequency − MHz

1990

Figure 24.

2010

G024

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TYPICAL CHARACTERISTICS (continued)

V

CM

= 1.7 V, V inBB

= 98 mVrms single-ended sine wave in quadrature, V kHz (unless otherwise noted).

CC

= 5 V, LO power = 8 dBm (single-ended), f

BB

= 50

ADJUSTED CARRIER FEEDTHROUGH vs

FREQUENCY AND TEMPERATURE

ADJUSTED CARRIER FEEDTHROUGH vs

FREQUENCY AND TEMPERATURE

0

0

−10

−20

−30

Adj at 2140 MHz

LO = 8 dBm

V

CC

= 5 V

85

°

C

–40

°

C

−10

−20

−30

Adj at 2500 MHz

LO = 8 dBm

V

CC

= 5 V

85

°

C

–40

°

C

−40

−40

−50

−50

−60

−60

25

°

C

−70

−80

−90

−100

2090

25

°

C

2110 2130 2150 f − Frequency − MHz

2170 2190

−70

−80

−90

−100

2400 2440 2480 2520 f − Frequency − MHz

2560 2600

G026

G025

Figure 25.

Figure 26.

ADJUSTED CARRIER FEEDTHROUGH vs

FREQUENCY AND TEMPERATURE

0

−10

−20

−30

−40

−50

−60

−70

−80

−90

−100

3400

Adj at 3500 MHz

LO = 8 dBm

V

CC

= 5 V

85

°

C

–40

°

25

C

°

C

3440 3480 3520 f − Frequency − MHz

3560

Figure 27.

3600

G027

ADJUSTED SIDEBAND SUPPRESSION vs

FREQUENCY AND TEMPERATURE

0

−10

−20

Adj at 942.6 MHz

LO = 8 dBm

P

OUT

= −3 dBm

V

CC

= 5 V

−30

−40

85

°

C

–40

°

C

−50

−60

25

°

C

−70

−80

900 920 940 960 f − Frequency − MHz

Figure 28.

980 1000

G028

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TYPICAL CHARACTERISTICS (continued)

V

CM

= 1.7 V, V inBB

= 98 mVrms single-ended sine wave in quadrature, V kHz (unless otherwise noted).

CC

= 5 V, LO power = 8 dBm (single-ended), f

BB

= 50

ADJUSTED SIDEBAND SUPPRESSION vs

FREQUENCY AND TEMPERATURE

ADJUSTED SIDEBAND SUPPRESSION vs

FREQUENCY AND TEMPERATURE

0

0

−10

−20

Adj at 1960 MHz

LO = 8 dBm

P

OUT

= −3 dBm

V

CC

= 5 V

−10

−20

Adj at 2140 MHz

LO = 8 dBm

P

OUT

= −3 dBm

V

CC

= 5 V

−30

−30

85

°

C

−40

−40

–40

°

C

85

°

C

−50

−50

−60

−60

–40

°

C

25

°

C

−70

−70

25

°

C

−80

1860 1900 1940 1980 f − Frequency − MHz

2020

Figure 29.

2060

G029

−80

2040 2080 2120 2160 f − Frequency − MHz

Figure 30.

2200 2240

G030

ADJUSTED SIDEBAND SUPPRESSION vs

FREQUENCY AND TEMPERATURE

0

−10

−20

Adj at 2500 MHz

LO = 8 dBm

P

OUT

= −3 dBm

V

CC

= 5 V

−30

−40 –40

°

C

85

°

C

−50

−60

−70

25

°

C

−80

2400

ADJUSTED SIDEBAND SUPPRESSION vs

FREQUENCY AND TEMPERATURE

0

−10

−20

Adj at 3500 MHz

LO = 8 dBm

P

OUT

= −3 dBm

V

CC

= 5 V

−30

−40

–40

°

C

85

°

C

−50

−60

−70

−80

3400

25

°

C

2440 2480 2520 f − Frequency − MHz

2560

Figure 31.

2600

G031

3440 3480 3520 f − Frequency − MHz

3560

Figure 32.

3600

G032

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TYPICAL CHARACTERISTICS (continued)

V

CM

= 1.7 V, V inBB

= 98 mVrms single-ended sine wave in quadrature, V kHz (unless otherwise noted).

CC

= 5 V, LO power = 8 dBm (single-ended), f

BB

= 50

OIP3 vs

COMMON-MODE VOLTAGE

OIP2 vs

COMMON-MODE VOLTAGE

35 90

2141 MHz

80

30

2141 MHz

70

25

60

20

50 1960 MHz

1960 MHz

15

40

30

10

5

0

1.2

LO = 8 dBm

V

T

CC

A

= 5 V

= 25

°

C

1.3

1.4

1.5

1.6

1.7

V

CM

− Common-Mode Voltage − V

1.8

Figure 33.

1.9

G033

20

10

0

1.2

LO = 8 dBm

V

T

CC

A

= 5 V

= 25

°

C

1.3

1.4

1.5

1.6

1.7

V

CM

− Common-Mode Voltage − V

1.8

Figure 34.

1.9

G034

ADJACENT CHANNEL POWER RATIO vs

OUTPUT POWER

−60

−63

−66

−69

Notes: 1. Using TTE’s LE7640T-2.2M-50-720A

LPF on Baseband inputs

2. Using TI’s DAC5687 as a source

generator

−72

−75

−78

−81

ADJ

−84

ALT

−87

Single Carrier, 1960 MHz

−90

−20 −18 −16 −14 −12 −10 −8 −6 −4

P

OUT

− Output Power − dBm

G041

Figure 35.

ADJACENT CHANNEL POWER RATIO vs

OUTPUT POWER

−66

−69

−72

−75

−78

−60

−63

Notes: 1. Using TTE’s LE7640T-2.2M-50-720A

LPF on Baseband inputs

2. Using TI’s DAC5687 as a source

generator

ADJ

−81

−84

−87

Single Carrier, 2140 MHz

ALT

−90

−20 −18 −16 −14 −12 −10 −8

P

OUT

− Output Power − dBm

Figure 36.

−6 −4

G042

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TYPICAL CHARACTERISTICS (continued)

V

CM

= 1.7 V, V inBB

= 98 mVrms single-ended sine wave in quadrature, V kHz (unless otherwise noted).

CC

= 5 V, LO power = 8 dBm (single-ended), f

BB

= 50

OIP3 at 1960 MHz DISTRIBUTION OIP2 at 1960 MHz DISTRIBUTION

60

25

50

20

40

30

20

10

0

24 25 26 27

OIP3 − dBm

Figure 37.

28 29

G036

UNADJUSTED CARRIER FEEDTHROUGH at 1960 MHz DISTRIBUTION

18

16

14

12

10

8

6

4

2

0

−24 −28 −32 −36 −40 −44 −48 −52 −56 −60 −64

CS − Unadjusted Carrier Feedthrough − dBm

G038

Figure 39.

15

10

5

0

56 58 60 62 64 66 68 70 72

OIP2 − dBm

G037

Figure 38.

30

UNADJUSTED SIDEBAND SUPPRESSION at 1960 MHz DISTRIBUTION

25

20

15

10

5

0

−36 −40 −44 −48 −52 −56 −60 −64 −68 −72 −76

SS − Unadjusted Sideband Suppression − dBc

G039

Figure 40.

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TYPICAL CHARACTERISTICS (continued)

V

CM

= 1.7 V, V inBB

= 98 mVrms single-ended sine wave in quadrature, V kHz (unless otherwise noted).

CC

= 5 V, LO power = 8 dBm (single-ended), f

BB

= 50

P1dB at 1800 MHz DISTRIBUTION

35

30

15

10

5

25

20

0

11.4

11.6

11.8

12

P1dB − dBm

Figure 41.

12.2

12.4

G040

APPLICATION INFORMATION AND EVALUATION BOARD

Basic Connections

• See

Figure 42

for proper connection of the TRF3703 modulator.

• Connect a single power supply (4.5 V–5.5 V) to pins 18 and 24. These pins should be decoupled as shown on pins 4, 5, 6, and 7.

• Connect pins 2, 5, 8, 11, 12, 14, 17, 19, 20, and 23 to GND.

• Connect a single-ended LO source of desired frequency to LOP (amplitude between –5 dBm and 12 dBm).

This should be ac-coupled through a 100-pF capacitor.

• Terminate the ac-coupled LON with 50 Ω to GND.

• Connect a baseband signal to pins 21 = I, 22 = I, 10 = Q, and 9 = Q.

• The differential baseband inputs should be set to the proper common-mode voltage of 1.7V.

• RF_OUT, pin 16, can be fed to a spectrum analyzer set to the desired frequency, LO ± baseband signal. This pin should also be ac-coupled through a 100-pF capacitor.

• All NC pins can be left floating.

ESD Sensitivity

RF devices may be extremely sensitive to electrostatic discharge (ESD). To prevent damage from ESD, devices should be stored and handled in a way that prevents the build-up of electrostatic voltages that exceed the rated level. Rated ESD levels should also not be exceeded while the device is installed on a printed circuit board

(PCB). Follow these guidelines for optimal ESD protection:

• Low ESD performance is not uncommon in RF ICs; see the

Absolute Maximum Ratings

table. Therefore, customers’ ESD precautions should be consistent with these ratings.

• The device should be robust once assembled onto the PCB unless external inputs (connectors, etc.) directly connect the device pins to off-board circuits.

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SMA_END

1

SMA_END

1

2 1

SMA_END

1

4

5

6

1

2

3

NC1

GND1

LOP

LON

GND2

NC2

VCC1

GND7

RF_OUT

NC5

GND6

NC4

18

17

16

15

14

13

TRF370317

SLWS209B – MARCH 2008 – REVISED JANUARY 2010

1

SMA_END

1 2

1 SMA_END

SMA_END

1 1

SMA_END

NOTE: DNI = Do not install.

Figure 42. TRF3703 EVM Schematic

S0214-02

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SLWS209B – MARCH 2008 – REVISED JANUARY 2010

Figure 43

shows the top view of the TRF3703 EVM board.

www.ti.com

K001

Figure 43. TRF3703 EVM Board Layout

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SLWS209B – MARCH 2008 – REVISED JANUARY 2010

8

9

6

7

4

5

2

3

1

Item

Number

10

11

0

7

1

4

3

2

2

0

0

1

2

Quantity

Table 1. Bill of Materials for TRF3703 EVM

Part

Reference

Value

C1, C2, C3 100 pF

C4, C5

C6, C7

1000 pF

4.7

m

F

C8, C9 1 m

F

C10, C11, 0.1

m F

C12, C13

C14, C15 5 pF

J1, J2, J3, LOP

J4, J5, J6,

J7

0402

0402

PCB Footprint

TANT_A

0402

0402

0402

SMA_SMEL_250x215

Mfr Name

Panasonic

Panasonic

KEMET

Panasonic

Panasonic

Panasonic

Johnson

Components

R1 0

R2, R3, R4, 0

R5

U1

W1, W2

0402

0402

Panasonic

Panasonic

TRF3703

Jumper_1x2_t hvt

QFN_24_163x163_0p50m TI m

HDR_THVT_1x2_100 Samtec

(1) DNI = Do not install.

Mfr Part Number

ECJ-0EC1H101J

ECJ-0VC1H102J

T491A475K016AS

ECJ-0EC1H010C_DNI

ECJ-0EB1A104K_DNI

ECJ-0EC1H050C_DNI

142-0711-821

ERJ-2GE0R00X

ERJ-2GE0R00

TRF370317

HTSW-150-07-L-S

Note

DNI

(1)

DNI

(1)

DNI

(1)

GSM Applications

The TRF370317 is suited for GSM and multicarrier GSM applications because of its high linearity and low noise level over the entire recommended operating range. It also has excellent EVM performance, which makes it ideal for the stringent GSM/EDGE applications.

WCDMA Applications

The TRF370317 is also optimized for WCDMA applications where both adjacent-channel power ratio (ACPR) and noise density are critically important. Using Texas instruments’ DAC568X series of high-performance digital-to-analog converters as depicted in

Figure 44 , excellent ACPR levels were measured with one-, two-, and

four-WCDMA carriers. See Electrical Characteristics, f values.

LO

= 1960 MHz and f

LO

= 2140 MHz for exact ACPR

16

DAC5687

TRF3703

I/Q

Modulator

RF_OUT

16

CLK1 CLK2

VCXO

CDCM7005

Clock Gen

TRF3761

PLL

LO Generator

Ref Osc

B0176-01

Figure 44. Typical Transmit Setup Block Diagram

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DAC-to-Modulator Interface Network

For optimum linearity and dynamic range, the digital-to-analog converter (DAC) can interface directly with the modulator; however, the common-mode voltage of each device must be maintained. A passive interface circuit is used to transform the common-mode voltage of the DAC to the desired set-point of the modulator. The passive circuit invariably introduces some insertion loss between the two devices. In general, it is desirable to keep the insertion loss as low as possible to achieve the best dynamic range.

Figure 45

shows the passive interconnect circuit for two different topologies. One topology is used when the DAC (e.g., DAC568x) common mode is larger than the modulator. The voltage V

ee

is nominally set to ground, but can be set to a negative voltage to reduce the insertion loss of the network. The second topology is used when the DAC (e.g., DAC56x2) common mode is smaller than the modulator. Note that this passive interconnect circuit is duplicated for each of the differential I/Q branches.

Vdd

DAC568x

R1

3.3V

Id

It

R2

1.7V

R3

TRF370x

Vee

Topology 1: DAC Vcm > TRF370x Vcm

DAC Vcm [V]

TRF370x Vcm [V]

Vdd [V]

Vee [V]

R1 [ Ω ]

R2 [ Ω ]

R3 [ Ω ]

Insertion loss [dB]

Vdd

DAC56x2

0.7V

R2

It

1.7V

R1

TRF370x

Id R3

Topology 2: DAC Vcm < TRF370x Vcm

S0338-01

Figure 45. Passive DAC-to-Modulator Interface Network

Table 2. DAC-to-Modulator Interface Network Values

Topology 1

With Vee = 0 V

3.3

1.7

5

Gnd

66

100

108

5.8

With Vee = –5 V

3.3

1.7

5

–5

56

80

336

1.9

Topology 2

0.7

1.7

5

N/A

960

290

52

2.3

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SLWS209B – MARCH 2008 – REVISED JANUARY 2010

DEFINITION OF SPECIFICATIONS

Unadjusted Carrier Feedthrough

This specification measures the amount by which the local oscillator component is suppressed in the output spectrum of the modulator. If the common mode voltage at each of the baseband inputs is exactly the same and there was no dc imbalance introduced by the modulator, the LO component would be naturally suppressed. DC offset imbalances in the device allow some of the LO component to feed through to the output. Because this phenomenon is independent of the RF output power and the injected LO input power, the parameter is expressed in absolute power, dBm.

Some improvement to the unadjusted carrier suppression in a localized band is possible by introducing a simple

RF filter in the baseband I/Q paths. The filter topology is a series resistor followed by a shunt capacitor. For example, using a series 50-

Ω resistor (R

2

, R

3

, R

4

, R

5

= 50

) followed by a shunt 4.7-pF capacitor (C10, C11,

C12, C13 = 4.7 pF) yields unadjusted carrier suppression improvement around the 2-GHz band.

Figure 46

shows the performance improvement for that filter configuration.

−20

−25

−30

−35

−40

−45

Without BB RC Filter

With BB RC Filter

−50

1700 1900 2100 2300 f − Frequency − MHz

2500 2700

G035

Figure 46. Carrier Suppression Improvement With RC Filter

Adjusted (Optimized) Carrier Feedthrough

This differs from the unadjusted suppression number in that the baseband input dc offsets are iteratively adjusted around their theoretical value of VCM to yield the maximum suppression of the LO component in the output spectrum. This is measured in dBm.

Unadjusted Sideband Suppression

This specification measures the amount by which the unwanted sideband of the input signal is suppressed in the output of the modulator, relative to the wanted sideband. If the amplitude and phase within the I and Q branch of the modulator were perfectly matched, the unwanted sideband (or image) would be naturally suppressed.

Amplitude and phase imbalance in the I and Q branches results in the increase of the unwanted sideband. This parameter is measured in dBc relative to the desired sideband.

Adjusted (Optimized) Sideband Suppression

This differs from the unadjusted sideband suppression in that the gain and phase of the baseband inputs are iteratively adjusted around their theoretical values to maximize the amount of sideband suppression. This is measured in dBc.

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Suppressions Over Temperature

This specification assumes that the user has gone though the optimization process for the suppression in question, and set the optimal settings for the I, Q inputs. This specification then measures the suppression when temperature conditions change after the initial calibration is done.

Figure 47

shows a simulated output and illustrates the respective definitions of various terms used in this data sheet.

nd

2

Order

IM rd

3

IM

Order

Desired

Signal

Unwanted

Sideband

LSB2 LSB1

=

LO

=

LO

– f

BB2

– f

BB1

LO f

2ndL

=

(f

BB2 f

3rdL

– f

BB1

= f1

=

2f1 f2 f

BB1

– f2

= f

3rdH f

BB2

+

LO

=

2f2

+

LO

) +

LO

– f1 f

2ndH

=

(f

BB2

+ f

BB1

) +

LO f

BBn BBn rd

= Baseband Frequency

BBn rd fn

BBn rd

= RF Frequency

BBn rd f

3rdH/L

3 rd rd rd

= 3 Order Intermodulation Product Frequency (High Side/Low Side)

BBn rd f

2ndH/L

2 nd nd rd

= 2

BBn

Order Intermodulation Product (High Side/Low Side)

BBn rd

LO

BBn rd

= Local Oscillator Frequency

BBn rd rd

LSBn

BBn rd f

M0104-01

Figure 47. Graphical Illustration of Common Terms

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SLWS209B – MARCH 2008 – REVISED JANUARY 2010

REVISION HISTORY

NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Revision A (June, 2008) to Revision B Page

• Added electrostatic discharge parameters to Absolute Maximum Ratings table .................................................................

3

• Added

ESD Sensitivity

section ...........................................................................................................................................

18

Changes from Original (March 2008) to Revision A Page

• Added ACPR graph to Typical Characteristics based on customers' requests ..................................................................

16

• Added ACPR graph to Typical Characteristics based on customers' requests ..................................................................

16

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PACKAGE OPTION ADDENDUM

www.ti.com

10-Jun-2014

PACKAGING INFORMATION

Orderable Device

TRF370317IRGER

Status

(1)

ACTIVE

Package Type Package

Drawing

VQFN RGE

Pins Package

24

Qty

Eco Plan

(2)

3000 Green (RoHS

& no Sb/Br)

Lead/Ball Finish

(6)

CU NIPDAU

MSL Peak Temp

(3)

Level-2-260C-1 YEAR

Op Temp (°C)

-40 to 85 TRF37

0317

Device Marking

(4/5)

TRF370317IRGET ACTIVE VQFN RGE 24 250 Green (RoHS

& no Sb/Br)

CU NIPDAU Level-2-260C-1 YEAR

(1)

The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

OBSOLETE: TI has discontinued the production of the device.

-40 to 85 TRF37

0317

(2)

Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details.

TBD: The Pb-Free/Green conversion plan has not been defined.

Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.

Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.

Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)

(3)

MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4)

There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5)

Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device.

(6)

Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.

TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

Addendum-Page 1

Samples

PACKAGE OPTION ADDENDUM

10-Jun-2014 www.ti.com

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

Addendum-Page 2

www.ti.com

TAPE AND REEL INFORMATION

PACKAGE MATERIALS INFORMATION

24-Apr-2013

*All dimensions are nominal

Device

TRF370317IRGER

TRF370317IRGET

Package

Type

Package

Drawing

VQFN

VQFN

RGE

RGE

Pins

24

24

SPQ

3000

250

Reel

Diameter

(mm)

Reel

Width

W1 (mm)

330.0

12.4

180.0

12.4

A0

(mm)

4.3

4.3

B0

(mm)

4.3

4.3

K0

(mm)

P1

(mm)

W

(mm)

Pin1

Quadrant

1.5

1.5

8.0

8.0

12.0

12.0

Q1

Q1

Pack Materials-Page 1

www.ti.com

PACKAGE MATERIALS INFORMATION

24-Apr-2013

*All dimensions are nominal

Device

TRF370317IRGER

TRF370317IRGET

Package Type Package Drawing Pins

VQFN

VQFN

RGE

RGE

24

24

SPQ

3000

250

Length (mm) Width (mm) Height (mm)

338.1

210.0

338.1

185.0

20.6

35.0

Pack Materials-Page 2

IMPORTANT NOTICE

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TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarily performed.

TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and applications using TI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provide adequate design and operating safeguards.

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