TRF37T05 300-MHz to 4-GHz Quadrature Modulator 1 Features 3 Description

TRF37T05 300-MHz to 4-GHz Quadrature Modulator 1 Features 3 Description

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TRF37T05

SLWS239A – JUNE 2013 – REVISED NOVEMBER 2015

TRF37T05 300-MHz to 4-GHz Quadrature Modulator

1 Features

1

• High Linearity:

– Output IP3: 30 dBm at 1850 MHz

• Low Output Noise Floor: –160 dBm/Hz

• 78-dBc Single-Carrier WCDMA ACPR at –10-dBm Channel Power

• Unadjusted Carrier Suppression: –40 dBm

• Unadjusted Sideband Suppression: –45 dBc

• Single Supply: 3.3-V Operation

• 1-bit Gain Step Control

• Fast Power-Up/Power-Down

2 Applications

• Cellular Base Station Transmitter

• CDMA: IS95, UMTS, CDMA2000, TD-SCDMA

• LTE (Long Term Evolution), TD-LTE

• TDMA: GSM, EDGE/UWC-136

• Multicarrier GSM (MC-GSM)

• Wireless MAN Wideband Transceivers

3 Description

The TRF37T05 is a low-noise direct quadrature modulator with exceptional TDD performance. It is capable of converting complex modulated signals from baseband or IF directly up to RF. The

TRF37T05 is a high-performance, superior-linearity device that is ideal to up-convert to RF frequencies of

300 MHz (Note: appropriate matching network is required for optimal performance at 300 MHz) through 4 GHz. The modulator is implemented as a double-balanced mixer.

The RF output block consists of a differential-tosingle-ended converter that is capable of driving a single-ended 50Ω load. The TRF37T05 requires a

0.25-V common-mode voltage for optimum linearity performance. The TRF37T05 also provides a fast power-down pin that can be used to reduce power dissipation while maintaining optimized adjusted carrier feed-through performance in TDD applications.

The TRF37T05 is available in an RGE-24 VQFN package.

PART NUMBER

Device Information

(1)

PACKAGE BODY SIZE (NOM)

TRF37T05 VQFN (24) 4.00 mm x 4.00 mm

(1) For all available packages, see the orderable addendum at the end of the data sheet.

Block Diagram

PD 1

GND

2

LOP 3

LOM 4

GND 5

GC 6

0/90

S

18 VCC

17 GND

16

RF

OUT

15 GND

14 GND

13 GND

1

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA.

TRF37T05

SLWS239A – JUNE 2013 – REVISED NOVEMBER 2015

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1

Features ..................................................................

1

2

Applications ...........................................................

1

3

Description .............................................................

1

4

Revision History.....................................................

2

5

Pin Configuration and Functions .........................

3

6

Specifications.........................................................

4

6.1

Absolute Maximum Ratings .....................................

4

6.2

ESD Ratings..............................................................

4

6.3

Recommended Operating Conditions .......................

4

6.4

Thermal Information ..................................................

4

6.5

Electrical Characteristics: General ............................

5

6.6

Electrical Characteristics...........................................

6

6.7

Typical Characteristics: Single-Tone Baseband .....

10

6.8

Typical Characteristics: Two-Tone Baseband ........

12

6.9

Typical Characteristics: Two-Tone Baseband, Mid-

Band Calibration ......................................................

16

6.10

Typical Characteristics: No Baseband ..................

18

6.11

Typical Characteristics: Two-Tone Baseband ......

19

7

Detailed Description ............................................

22

Table of Contents

7.1

Overview .................................................................

22

7.2

Functional Block Diagram .......................................

22

7.3

Feature Description.................................................

22

7.4

Device Functional Modes........................................

22

8

Application and Implementation ........................

23

8.1

Application Information............................................

23

8.2

Typical Application ..................................................

23

9

Power Supply Recommendations ......................

29

10

Layout...................................................................

30

10.1

Layout Guidelines .................................................

30

10.2

Layout Example ....................................................

30

11

Device and Documentation Support .................

31

11.1

Device Support ....................................................

31

11.2

Community Resources..........................................

32

11.3

Trademarks ...........................................................

32

11.4

Glossary ................................................................

32

12 Mechanical, Packaging, and Orderable

Information ...........................................................

32

4 Revision History

NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Original (June 2013) to Revision A Page

• Added the ESD table, Detailed Description, Application and Implementation, Device and Documentation Support,

Mechanical, Packaging, and Orderable Information...............................................................................................................

1

2

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5 Pin Configuration and Functions

RGE Package

24 Pin VQFN

Top View

TRF37T05

SLWS239A – JUNE 2013 – REVISED NOVEMBER 2015

PD

GND

1

2

LOP 3

LOM 4

GND 5

GC 6

Thermal Pad

18 VCC

17 GND

16

RF

OUT

15 GND

14 GND

13 GND

16

17

18

19

20

21

22

23

24

11

12

13

14

15

6

7

8

4

5

9

10

2

3

NO.

1

PIN

GND

GND

GND

GND

GND

RF

OUT

GND

VCC

GND

GND

BBIP

BBIM

GND

VCC

NAME

PD

GND

LOP

LOM

GND

GC

GND

GND

BBQM

BBQP

I/O

O

I

I

I

I

I

I

I

I

I

I

I

I

I

I

I

I

I

I

I

I

I

I

Pin Functions

DESCRIPTION

Power-down digital input (high = device off)

Ground

Local oscillator input

Local oscillator input

Ground

Gain control digital input (high = high gain)

Ground or leave unconnected

Ground

In-quadrature input

In-quadrature input

Ground

Ground

Ground

Ground

Ground

RF output

Ground

Power supply

Ground

Ground

In-phase input

In-phase input

Ground

Power supply

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6 Specifications

6.1 Absolute Maximum Ratings

(1)

Over operating free-air temperature range (unless otherwise noted).

Supply voltage range

(2)

Digital I/O voltage range

Operating virtual junction temperature range, T

J

Operating ambient temperature range, T

A

Storage temperature range, T stg

MIN

–0.3

–0.3

–40

–40

–65

MAX

6

V

CC

+0.5

150

85

150

UNIT

V

V

°C

°C

°C

(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating

conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) All voltage values are with respect to network ground terminal.

6.2 ESD Ratings

V

(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001

(1)

Charged-device model (CDM), per JEDEC specification JESD22-

C101

(2)

VALUE

±4000

±250

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. .

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

UNIT

V

6.3 Recommended Operating Conditions

Over operating free-air temperature range (unless otherwise noted).

V

CC

Power-supply voltage

MIN NOM MAX UNIT

3.15

3.3

3.6

V

6.4 Thermal Information

θ

JA

θ

JCtop

θ

JB

ψ

JT

ψ

JB

θ

JCbot

THERMAL METRIC

Junction-to-ambient thermal resistance

Junction-to-case (top) thermal resistance

Junction-to-board thermal resistance

Junction-to-top characterization parameter

Junction-to-board characterization parameter

Junction-to-case (bottom) thermal resistance

TRF37T05

RGE (VQFN)

24 PINS

38.4

42.5

16.6

0.9

16.6

6.6

UNIT

°C/W

°C/W

°C/W

°C/W

°C/W

°C/W

4

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SLWS239A – JUNE 2013 – REVISED NOVEMBER 2015

6.5 Electrical Characteristics: General

Over recommended operating conditions; at power supply = 3.3 V and T

A

= 25°C, unless otherwise noted.

PARAMETERS TEST CONDITIONS MIN TYP

DC PARAMETERS

I

CC

Total supply current

T

A

= 25°C, device on (PD = low)

T

A

= 25°C, device off (PD = high)

306

146

LO INPUT

f

LO

LO low frequency

LO high frequency

LO input power

BASEBAND INPUTS

V

CM

BW

I and Q input dc common-mode voltage

1-dB input frequency bandwidth

–10

300

4000

0

0.25

Z

I

Input impedance

Resistance

Parallel capacitance

1000

8

4.6

POWER ON/OFF

Turn on time

Turn off time

DIGITAL INTERFACE

V

IH

V

IL

PD high-level input voltage

PD low-level input voltage

PD = low to 90% final output power

PD = high to initial output power –30 dB

2

0.2

0.2

MAX

+15

0.5

0.8

UNIT

mA mA

MHz

MHz dBm

V

MHz k Ω pF

μs

μs

V

V

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6.6 Electrical Characteristics

Over recommended operating conditions; at power supply = 3.3 V, T

A ended (LOP); GC set low, V

IN

BB = 1 V

PP

(diff) in quadrature, and f

BB

= 25°C, V

CM

= 0.25 V; LO Power = 0 dBm, single-

= 5.5 MHz, standard broadband output matching circuit, unless otherwise noted.

PARAMETERS TEST CONDITIONS MIN TYP MAX UNIT f

LO

= 400 MHz

G Voltage gain

Output RMS voltage over input I (or Q) RMS voltage, GC set low

Output RMS voltage over input I (or Q) RMS voltage, GC set high

GC set low

–4.7

–1.9

–0.7

dB dB dBm

P

OUT

Output power

P1dB Output compression point

GC set high

GC set low

GC set high

2.1

8.5

9.1

dBm dBm dBm

IP3

IP2

SBS

CF

HD2

BB

HD3

BB

Output IP3

Output IP2

Unadjusted sideband suppression

Unadjusted carrier feedthrough

Output noise floor

Baseband harmonics

Baseband harmonics f

BB1

= 4.5 MHz; f

BB2

= 5.5 MHz; GC set low f

BB1

= 4.5 MHz; f

BB2

= 5.5 MHz; GC set high

Measured at f

LO

+ (f

BB1

± f

BB2

), GC set low

Measured at f

LO

+ (f

BB1

± f

BB2

), GC set high

Measured at LO frequency

Measured at 2 x LO

Measured at 3 x LO

DC only to BB inputs; 10-MHz offset from LO f

Measured with ±1-MHz tone at 0.5 V

PP

LO

±(2 x f

BB

) each at

Measured with ±1-MHz tone at 0.5 V

PP f

LO

±(3 x f

BB

) each at

26

25.4

60.2

61.9

–57.4

–51.6

–50

–49

–166.7

–67

–64 dBm dBm dBm dBm dBc dBm dBm dBm dBm/Hz dBc dBc

f

LO

= 750 MHz

G

P

OUT

P1dB

IP3

IP2

SBS

CF

HD2

BB

HD3

BB

Voltage gain

Output power

Output compression point

Output IP3

Output IP2

Unadjusted sideband suppression

Unadjusted carrier feedthrough

Output noise floor

Baseband harmonics

Baseband harmonics

Output RMS voltage over input I (or Q) RMS voltage, GC set low

Output RMS voltage over input I (or Q) RMS voltage, GC set high

GC set low

GC set high

GC set low

GC set high f

BB1

= 4.5 MHz; f

BB2

= 5.5 MHz; GC set low f

BB1

= 4.5 MHz; f

BB2

= 5.5 MHz; GC set high

Measured at f

LO

+ (f

BB1

± f

BB2

), GC set low

Measured at f

LO

+ (f

BB1

± f

BB2

), GC set high

Measured at LO frequency

Measured at 2 x LO

Measured at 3 x LO

DC only to BB inputs; 10-MHz offset from LO

Measured with ±1-MHz tone at 0.5 V

PP f

LO

±(2 x f

BB

) each at

Measured with ±1-MHz tone at 0.5 V

PP f

LO

±(3 x f

BB

) each at

0.2

3

73.6

80.5

–45.2

–45.7

–46

–53.5

–159.9

4.2

7

13.3

13.9

31.5

30.8

–70

–66 dB dB dBc dBc dBm dBm dBc dBm dBm dBm dBm/Hz dBm dBm dBm dBm dBm dBm

6

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SLWS239A – JUNE 2013 – REVISED NOVEMBER 2015

Electrical Characteristics (continued)

Over recommended operating conditions; at power supply = 3.3 V, T

A ended (LOP); GC set low, V unless otherwise noted.

IN

BB = 1 V

PP

(diff) in quadrature, and f

BB

= 25°C, V

CM

= 0.25 V; LO Power = 0 dBm, single-

= 5.5 MHz, standard broadband output matching circuit,

PARAMETERS TEST CONDITIONS MIN TYP MAX UNIT f

LO

= 900 MHz

G

P

OUT

P1dB

IP3

IP2

SBS

CF

HD2

BB

HD3

BB

Voltage gain

Output power

Output compression point

Output IP3

Output IP2

Unadjusted sideband suppression

Unadjusted carrier feedthrough

Output noise floor

Baseband harmonics

Baseband harmonics

Output RMS voltage over input I (or Q) RMS voltage, GC set low

Output RMS voltage over input I (or Q) RMS voltage, GC set high

GC set low

GC set high

GC set low

GC set high f

BB1

= 4.5 MHz; f

BB2

= 5.5 MHz; GC set low f

BB1

= 4.5 MHz; f

BB2

= 5.5 MHz; GC set high

Measured at f

LO

+ (f

BB1

± f

BB2

), GC set low

Measured at f

LO

+ (f

BB1

± f

BB2

), GC set high

Measured at LO frequency

Measured at 2 x LO

Measured at 3 x LO

DC only to BB inputs; 10-MHz offset from LO

Measured with ±1-MHz tone at 0.5 V

PP f

LO

±(2 x f

BB

) each at

Measured with ±1-MHz tone at 0.5 V

PP f

LO

±(3 x f

BB

) each at

0.3

3.1

71.5

75.3

–43.8

–48.5

–53

–50

–157.9

4.3

7.1

13.2

13.7

31.7

30.9

–80

–65 dB dB dBc dBc dBm dBm dBc dBm dBm dBm dBm/Hz dBm dBm dBm dBm dBm dBm

f

LO

= 1840 MHz

G

P

OUT

P1dB

IP3

IP2

SBS

CF

HD2

BB

HD3

BB

Voltage gain

Output power

Output compression point

Output IP3

Output IP2

Unadjusted sideband suppression

Unadjusted carrier feedthrough

Output noise floor

Baseband harmonics

Baseband harmonics

Output RMS voltage over input I (or Q) RMS voltage, GC set low

Output RMS voltage over input I (or Q) RMS voltage, GC set high

GC set low

GC set high

GC set low

GC set high f

BB1

= 4.5 MHz; f

BB2

= 5.5 MHz; GC set low f

BB1

= 4.5 MHz; f

BB2

= 5.5 MHz; GC set high

Measured at f

LO

+ (f

BB1

± f

BB2

), GC set low

Measured at f

LO

+ (f

BB1

± f

BB2

), GC set high

Measured at LO frequency

Measured at 2 x LO

Measured at 3 x LO

DC only to BB inputs; 10-MHz offset from LO f

Measured with ±1-MHz tone at 0.5 V

PP

LO

±(2 x f

BB

) each at

Measured with ±1-MHz tone at 0.5 V

PP f

LO

±(3 x f

BB

) each at

–0.1

2.5

3.9

6.5

13.2

13.6

32.1

30.3

60.8

62

–43.4

–42.4

–41

–53

–158.8

–69

–80 dB dB dBc dBc dBm dBm dBm dBm dBm dBm dBm dBm dBc dBm dBm dBm dBm/Hz

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Electrical Characteristics (continued)

Over recommended operating conditions; at power supply = 3.3 V, T

A ended (LOP); GC set low, V unless otherwise noted.

IN

BB = 1 V

PP

(diff) in quadrature, and f

BB

= 25°C, V

CM

= 0.25 V; LO Power = 0 dBm, single-

= 5.5 MHz, standard broadband output matching circuit,

PARAMETERS TEST CONDITIONS MIN TYP MAX UNIT f

LO

= 2140 MHz

G

P

OUT

P1dB

IP3

IP2

SBS

CF

HD2

BB

HD3

BB

Voltage gain

Output power

Output compression point

Output IP3

Output IP2

Unadjusted sideband suppression

Unadjusted carrier feedthrough

Output noise floor

Baseband harmonics

Baseband harmonics

Output RMS voltage over input I (or Q) RMS voltage, GC set low

Output RMS voltage over input I (or Q) RMS voltage, GC set high

GC set low

GC set high

GC set low

GC set high f

BB1

= 4.5 MHz; f

BB2

= 5.5 MHz; GC set low f

BB1

= 4.5 MHz; f

BB2

= 5.5 MHz; GC set high

Measured at f

LO

+ (f

BB1

± f

BB2

), GC set low

Measured at f

LO

+ (f

BB1

± f

BB2

), GC set high

Measured at LO frequency

Measured at 2 x LO

Measured at 3 x LO

DC only to BB inputs; 10-MHz offset from LO

Measured with ±1-MHz tone at 0.5 V

PP f

LO

±(2 x f

BB

) each at

Measured with ±1-MHz tone at 0.5 V

PP f

LO

±(3 x f

BB

) each at

0.1

2.9

65.5

68.2

–45.6

–39.3

–37

–46

–160.0

4.1

6.9

13.1

13.5

28.6

27.6

–61

–60 dB dB dBc dBc dBm dBm dBc dBm dBm dBm dBm/Hz dBm dBm dBm dBm dBm dBm

f

LO

= 2600 MHz

G

P

OUT

P1dB

IP3

IP2

SBS

CF

HD2

BB

HD3

BB

Voltage gain

Output power

Output compression point

Output IP3

Output IP2

Unadjusted sideband suppression

Unadjusted carrier feedthrough

Output noise floor

Baseband harmonics

Baseband harmonics

Output RMS voltage over input I (or Q) RMS voltage, GC set low

Output RMS voltage over input I (or Q) RMS voltage, GC set high

GC set low

GC set high

GC set low

GC set high f

BB1

= 4.5 MHz; f

BB2

= 5.5 MHz; GC set low

Ff

BB1

= 4.5 MHz; f

BB2

= 5.5 MHz; GC set high

Measured at f

LO

+ (f

BB1

± f

BB2

), GC set low

Measured at f

LO

+ (f

BB1

± f

BB2

), GC set high

Measured at LO frequency

Measured at 2 x LO

Measured at 3 x LO

DC only to BB inputs; 10-MHz offset from LO f

Measured with ±1-MHz tone at 0.5 V

PP

LO

±(2 x f

BB

) each at

Measured with ±1-MHz tone at 0.5 V

PP f

LO

±(3 x f

BB

) each at

–0.8

2

3.2

5.6

12.5

12.8

28

27.2

67.9

66.4

–52.9

–37.8

–41

–42

–160.6

–67

–59 dB dB dBc dBc dBm dBm dBm dBm dBm dBm dBm dBm dBm dBm dBm dBm dBm/Hz

8

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SLWS239A – JUNE 2013 – REVISED NOVEMBER 2015

Electrical Characteristics (continued)

Over recommended operating conditions; at power supply = 3.3 V, T

A ended (LOP); GC set low, V unless otherwise noted.

IN

BB = 1 V

PP

(diff) in quadrature, and f

BB

= 25°C, V

CM

= 0.25 V; LO Power = 0 dBm, single-

= 5.5 MHz, standard broadband output matching circuit,

PARAMETERS TEST CONDITIONS MIN TYP MAX UNIT f

LO

= 3500 MHz

G

P

OUT

P1dB

IP3

IP2

SBS

CF

HD2

BB

HD3

BB

Voltage gain

Output power

Output compression point

Output IP3

Output IP2

Unadjusted sideband suppression

Unadjusted carrier feedthrough

Output noise floor

Baseband harmonics

Baseband harmonics

Output RMS voltage over input I (or Q) RMS voltage, GC set low

Output RMS voltage over input I (or Q) RMS voltage, GC set high

GC set low

GC set high

GC set low

GC set high f

BB1

= 4.5 MHz; f

BB2

= 5.5 MHz; GC set low f

BB1

= 4.5 MHz; f

BB2

= 5.5 MHz; GC set high

Measured at f

LO

+ (f

BB1

± f

BB2

), GC set low

Measured at f

LO

+ (f

BB1

± f

BB2

), GC set high

Measured at LO frequency

Measured at 2 x LO

Measured at 3 x LO

DC only to BB inputs; 10-MHz offset from LO

Measured with ±1-MHz tone at 0.5 V

PP f

LO

±(2 x f

BB

) each at

Measured with ±1-MHz tone at 0.5 V

PP f

LO

±(3 x f

BB

) each at

–1

1.8

47.8

48.6

–45.2

–31.6

–30

–53

–160.6

3

5.8

12.1

12.3

23.8

25.3

–54

–50 dB dB dBc dBc dBm dBm dBm dBm dBm dBm dBm/Hz dBm dBm dBm dBm dBm dBm

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6.7 Typical Characteristics: Single-Tone Baseband

V

CC

V

PP

= 3.3 V; T

A

= 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (f differential sine waves in quadrature with V

CM

BB

) = 5.5 MHz; baseband I/Q amplitude = 1-

= 0.25 V; and broadband output match, unless otherwise noted.

1

0

−1

−2

0

5

4

3

2

10

9

8

7

6

T

A

= −40°C

T

A

= 25°C

T

A

= 85°C

500 1000 1500 2000 2500 3000 3500 4000

Frequency (MHz)

G002

Figure 1. Output Power vs LO Frequency (f

LO

) and

Temperature

10

9

8

7

2

1

0

−1

−2

0

6

5

4

3

LO Power = −5 dBm

LO Power = 0 dBm

LO Power = 5 dBm

500 1000 1500 2000 2500 3000 3500 4000

Frequency (MHz)

G004

Figure 3. Output Power vs LO Frequency (f

LO

) Over LO

Drive Level

1

0

−1

−2

0

5

4

3

2

10

9

8

7

6

V

CM

= 0.5 V

500 1000 1500 2000 2500

Frequency (MHz)

3000

T

T

T

A

= −40°C

A

= 25°C

A

= 85°C

3500 4000

G066

Figure 5. Output Power vs LO Frequency (f

LO

) and

Temperature at V

CM

= 0.5 V

5

0

−5

−10

−15

1

0

−1

−2

0

5

4

3

2

10

9

8

7

6

V

CC

= 3.15 V

V

CC

= 3.30 V

V

CC

= 3.45 V

500 1000 1500 2000 2500 3000 3500 4000

Frequency (MHz)

G003

Figure 2. Output Power vs LO Frequency (f

LO

) and Supply

Voltage

10

9

8

7

2

1

0

−1

−2

0

6

5

4

3

Gain Control = Off

Gain Control = On

500 1000 1500 2000 2500 3000 3500 4000

Frequency (MHz)

G005

Figure 4. Output Power vs LO Frequency (f

LO

) and Gain

Select Setting

15

LO Frequency = 2140 MHz

10

−20

0.01

0.1

1

Baseband Voltage Single−Ended (Vpp)

10

G001

Figure 6. Output Power vs Baseband Voltage at 2140 MHz

10

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Typical Characteristics: Single-Tone Baseband (continued)

V

CC

V

PP

= 3.3 V; T

A

= 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (f differential sine waves in quadrature with V

CM

BB

) = 5.5 MHz; baseband I/Q amplitude = 1-

= 0.25 V; and broadband output match, unless otherwise noted.

17 17

16

15

14

T

A

= −40°C

T

A

= 25°C

T

A

= 85°C

16

15

14

V

CC

= 3.15 V

V

CC

= 3.30 V

V

CC

= 3.45 V

13

12

11

10

9

8

7

6

5

0 500 1000 1500 2000 2500 3000 3500 4000

Frequency (MHz)

G006

Figure 7. P1dB vs LO Frequency (f

LO

) and Temperature

13

12

11

10

9

8

7

6

5

0 500 1000 1500 2000 2500 3000 3500 4000

Frequency (MHz)

G007

Figure 8. P1dB vs LO Frequency (f

LO

) and Supply Voltage

12

11

10

9

8

7

6

5

0

17

16

15

14

13

LO Power = −5 dBm

LO Power = 0 dBm

LO Power = 5 dBm

500 1000 1500 2000 2500 3000 3500 4000

Frequency (MHz)

G008

Figure 9. P1dB vs LO Frequency (f

LO

) and LO Drive Level

12

11

10

9

8

7

6

5

0

17

16

15

14

13

Gain Control = Off

Gain Control = On

500 1000 1500 2000 2500 3000 3500 4000

Frequency (MHz)

G009

Figure 10. P1dB vs LO Frequency (f

LO

) and Gain Select

Setting

17

16

15

14

13

12

11

10

9

8

7

6

5

0

V

CM

= 0.5 V

500 1000 1500 2000 2500

Frequency (MHz)

3000

T

T

T

A

A

A

= −40°C

= 25°C

= 85°C

3500 4000

G010

Figure 11. P1dB vs LO Frequency (f

LO

) and Temperature AT V

CM

= 0.5 V

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6.8 Typical Characteristics: Two-Tone Baseband

V

CC

= 3.3 V; T

A

= 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (f

BB

) = 4.5 MHz, 5.5 MHz; baseband I/Q amplitude = 0.5-V

PP

/tone differential sine waves in quadrature with V

CM

= 0.25 V; and broadband output match, unless otherwise noted.

36

34

32

30

28

26

24

22

20

18

16

14

12

10

0

T

A

= −40°C

T

A

= 25°C

T

A

= 85°C

500 1000 1500 2000 2500 3000 3500 4000

Frequency (MHz)

G011

Figure 12. OIP3 vs LO Frequency (f

LO

) and Temperature

36

34

32

30

28

26

24

22

20

18

16

14

12

10

0

LO Power = −5 dBm

LO Power = 0 dBm

LO Power = 5 dBm

500 1000 1500 2000 2500 3000 3500 4000

Frequency (MHz)

G013

Figure 14. OIP3 vs LO Frequency (f

LO

) and LO Drive Level

36

34

32

30

28

26

24

22

20

18

16

14

12

10

0

V

CM

= 0.5 V

500 1000 1500 2000 2500

Frequency (MHz)

3000

T

T

T

A

A

A

= −40°C

= 25°C

= 85°C

3500 4000

G014

Figure 16. OIP3 vs LO Frequency (f

LO

) and Temperature AT

V

CM

= 0.5 V

36

34

32

30

28

26

24

22

20

18

16

14

12

10

0

V

CC

= 3.15 V

V

CC

= 3.30 V

V

CC

= 3.45 V

500 1000 1500 2000 2500 3000 3500 4000

Frequency (MHz)

G012

Figure 13. OIP3 vs LO FRequency (f

LO

) anD Supply Voltage

36

34

32

30

28

26

24

22

20

18

16

14

12

10

0

Gain Control = Off

Gain Control = On

500 1000 1500 2000 2500 3000 3500 4000

Frequency (MHz)

G015

Figure 15. OIP3 vs LO Frequency (f

LO

) And Gain Select

Setting

105

100

95

90

85

80

75

70

65

60

55

50

45

40

35

30

25

0

T

A

= −40°C

T

A

= 25°C

T

A

= 85°C

500 1000 1500 2000 2500 3000 3500 4000

Frequency (MHz)

G016

Figure 17. OIP2 vs LO Frequency (f

LO

) and Temperature

12

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Typical Characteristics: Two-Tone Baseband (continued)

V

CC

= 3.3 V; T

A

= 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (f

BB

) = 4.5 MHz, 5.5 MHz; baseband I/Q amplitude = 0.5-V

PP otherwise noted.

/tone differential sine waves in quadrature with V

CM

= 0.25 V; and broadband output match, unless

105

100

95

90

85

80

75

70

65

60

55

50

45

40

35

30

25

0

V

CC

= 3.15 V

V

CC

= 3.30 V

V

CC

= 3.45 V

500 1000 1500 2000 2500 3000 3500 4000

Frequency (MHz)

G017

Figure 18. OIP2 vs LO Frequency (f

LO

) and Supply Voltage

105

100

95

90

85

80

75

70

65

60

55

50

45

40

35

30

25

0

Gain Control = Off

Gain Control = On

500 1000 1500 2000 2500 3000 3500 4000

Frequency (MHz)

G020

Figure 20. OIP2 vs LO Frequency (f

LO

) and Gain Select

Setting

0

−5

−10

−15

−20

−25

−30

−35

−40

−45

−50

−55

−60

−65

−70

0

T

A

= −40°C

T

A

= 25°C

T

A

= 85°C

500 1000 1500 2000 2500 3000 3500 4000

Frequency (MHz)

G021

Figure 22. Unadjusted Carrier Feedthrough vs LO

Frequency (f

LO

) and Temperature

105

100

95

90

85

80

75

70

65

60

55

50

45

40

35

30

25

0

LO Power = −5 dBm

LO Power = 0 dBm

LO Power = 5 dBm

500 1000 1500 2000 2500 3000 3500 4000

Frequency (MHz)

G018

Figure 19. OIP2 vs LO Frequency (f

LO

) and LO Drive Level

105

100

95

90

85

80

75

70

65

60

55

50

45

40

35

30

25

0

V

CM

= 0.5 V

500 1000 1500 2000 2500

Frequency (MHz)

3000

T

T

T

A

A

A

= −40°C

= 25°C

= 85°C

3500 4000

G019

Figure 21. OIP2 vs LO Frequency (f

LO

) and Temperature AT

V

CM

= 0.5 V

0

−5

−10

−15

−20

−25

−30

−35

−40

−45

−50

−55

−60

−65

−70

0

V

CC

= 3.15 V

V

CC

= 3.30 V

V

CC

= 3.45 V

500 1000 1500 2000 2500 3000 3500 4000

Frequency (MHz)

G022

Figure 23. Unadjusted Carrier Feedthrough vs LO

Frequency (f

LO

) and Supply Voltage

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Typical Characteristics: Two-Tone Baseband (continued)

V

CC

= 3.3 V; T

A

= 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (f

BB

) = 4.5 MHz, 5.5 MHz; baseband I/Q amplitude = 0.5-V

PP otherwise noted.

/tone differential sine waves in quadrature with V

CM

= 0.25 V; and broadband output match, unless

0

−5

−10

−15

−20

−25

−30

−35

−40

−45

−50

−55

−60

−65

−70

0

LO Power = −5 dBm

LO Power = 0 dBm

LO Power = 5 dBm

500 1000 1500 2000 2500 3000 3500 4000

Frequency (MHz)

G023

Figure 24. Unadjusted Carrier Feedthrough vs LO

Frequency (f

LO

) and LO Drive Level

0

−5

−10

−15

−20

−25

−30

−35

−40

−45

−50

−55

−60

−65

−70

0

V

CM

= 0.5 V

500 1000 1500 2000 2500

Frequency (MHz)

3000

T

T

T

A

A

A

= −40°C

= 25°C

= 85°C

3500 4000

G024

Figure 26. Unadjusted Carrier Feedthrough vs LO

Frequency (f

LO

) and Temperature at V

CM

= 0.5 V

0

−5

−10

−15

−20

−25

−30

−35

−40

−45

−50

−55

−60

−65

−70

0

T

A

= −40°C

T

A

= 25°C

T

A

= 85°C

500 1000 1500 2000 2500 3000 3500 4000

Frequency (MHz)

G026

Figure 28. Unadjusted Sideband Suppression vs LO

Frequency (f

LO

) and Temperature

−30

−40

−50

−60

−70

−80

−90

10

0

−10

−20

0

−5

−10

−15

−20

−25

−30

−35

−40

−45

−50

−55

−60

−65

−70

0

Gain Control = Off

Gain Control = On

500 1000 1500 2000 2500 3000 3500 4000

Frequency (MHz)

G025

Figure 25. Unadjusted Carrier Feedthrough vs LO

Frequency (f

LO

) and Gain Select Setting

Adjusted at T

A

= 25°C

Device Count = 10

T

A

= −40°C

T

A

= 25°C

T

A

= 85°C

−100

0 500 1000 1500 2000 2500 3000 3500 4000

Frequency (MHz)

G060

Figure 27. Carrier Feedthrough vs LO Frequency (f

LO

) and

Temperature After Nulling at 25°C; Multiple Devices

0

−5

−10

−15

−20

−25

−30

−35

−40

−45

−50

−55

−60

−65

−70

0

V

CC

= 3.15 V

V

CC

= 3.30 V

V

CC

= 3.45 V

500 1000 1500 2000 2500 3000 3500 4000

Frequency (MHz)

G027

Figure 29. Unadjusted Sideband Suppression vs LO

Frequency (f

LO

) and Supply Voltage

14

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SLWS239A – JUNE 2013 – REVISED NOVEMBER 2015

Typical Characteristics: Two-Tone Baseband (continued)

V

CC

= 3.3 V; T

A

= 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (f

BB

) = 4.5 MHz, 5.5 MHz; baseband I/Q amplitude = 0.5-V

PP otherwise noted.

/tone differential sine waves in quadrature with V

CM

= 0.25 V; and broadband output match, unless

0

−5

−10

−15

−20

−25

−30

−35

−40

−45

−50

−55

−60

−65

−70

0

LO Power = −5 dBm

LO Power = 0 dBm

LO Power = 5 dBm

500 1000 1500 2000 2500 3000 3500 4000

Frequency (MHz)

G028

Figure 30. Unadjusted Sideband Suppression vs LO

Frequency (f

LO

) and LO Drive Level

0

−5

−10

−15

−20

−25

−30

−35

−40

−45

−50

−55

−60

−65

−70

0

Gain Control = Off

Gain Control = On

500 1000 1500 2000 2500 3000 3500 4000

Frequency (MHz)

G030

Figure 31. Unadjusted Sideband Suppression vs LO

Frequency (f

LO

) and Gain Select Setting

0

−5

−10

−15

−20

−25

−30

−35

−40

−45

−50

−55

−60

−65

−70

0

V

CM

= 0.5 V

500 1000 1500 2000 2500

Frequency (MHz)

3000

T

T

T

A

A

A

= −40°C

= 25°C

= 85°C

3500 4000

G029

Figure 32. Unadjusted sideband Suppression vs LO Frequency (f

LO

) and Temperature at V

CM

= 0.5 V

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6.9 Typical Characteristics: Two-Tone Baseband, Mid-Band Calibration

V

CC

= 3.3 V; T

A

= 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (f

BB

) = 4.5 MHz, 5.5 MHz; baseband I/Q amplitude = 0.5-V

PP

/tone differential sine waves in quadrature with V

CM

= 0.25 V; and broadband output match, unless otherwise noted. Single point adjustment mid-band.

−10

−20

−30

−40

−50

−60

−70

−80

Adjusted at 748MHz − T

A

= 25°C T

A

= −40°C

T

A

= 25°C

T

A

= 85°C

−90

−100

680 700 720 740 760

Frequency (MHz)

780 800 820

G036

Figure 33. Adjusted Carrier Feedthrough vs LO Frequency and Temperature (750 LTE Band)

−10

−20

−30

Adjusted at 1960MHz − T

A

= 25°C T

A

= −40°C

T

A

= 25°C

T

A

= 85°C

−40

−50

−60

−70

−80

−90

−100

1880 1900 1920 1940 1960 1980 2000 2020 2040

Frequency (MHz)

G038

Figure 35. Adjusted Carrier Feedthrough vs LO Frequency and Temperature (PCS Band)

−10

−20

−30

Adjusted at 2600MHz − T

A

= 25°C T

A

= −40°C

T

A

= 25°C

T

A

= 85°C

−40

−50

−60

−70

−80

−90

−100

2500 2525 2550 2575 2600 2625 2650 2675 2700

Frequency (MHz)

G040

Figure 37. Adjusted Carrier Feedthrough vs LO Frequency and Temperature (2.6 GHz LTE Band)

−10

−20

−30

−40

−50

−60

−70

−80

Adjusted at 942.5MHz − T

A

= 25°C T

A

= −40°C

T

A

= 25°C

T

A

= 85°C

−90

−100

870 890 910 930 950

Frequency (MHz)

970 990 1010

G037

Figure 34. Adjusted Carrier Feedthrough vs LO Frequency and Temperature (GSM900 Band)

−10

−20

−30

Adjusted at 2140MHz − T

A

= 25°C T

A

= −40°C

T

A

= 25°C

T

A

= 85°C

−40

−50

−60

−70

−80

−90

−100

2060 2080 2100 2120 2140 2160 2180 2200 2220

Frequency (MHz)

G039

Figure 36. Adjusted carrier Feedthrough vs LO Frequency and Temperature (UMTS Band)

−10

−20

−30

Adjusted at 3500MHz − T

A

= 25°C T

A

= −40°C

T

A

= 25°C

T

A

= 85°C

−40

−50

−60

−70

−80

−90

−100

3400 3425 3450 3475 3500 3525 3550 3575 3600

Frequency (MHz)

G041

Figure 38. Adjusted Carrier Feedthrough vs LO Frequency and Temperature (WiMAX/LTE Band)

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Typical Characteristics: Two-Tone Baseband, Mid-Band Calibration (continued)

V

CC

= 3.3 V; T

A

= 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (f

BB

) = 4.5 MHz, 5.5 MHz; baseband I/Q amplitude = 0.5-V

PP

/tone differential sine waves in quadrature with V otherwise noted. Single point adjustment mid-band.

CM

= 0.25 V; and broadband output match, unless

−10 −10

−20

−30

Adjusted at 748MHz − T

A

= 25°C T

A

= −40°C

T

A

= 25°C

T

A

= 85°C

−20

−30

Adjusted at 942.5MHz − T

A

= 25°C T

A

= −40°C

T

A

= 25°C

T

A

= 85°C

−40 −40

−50

−60

−70

−80

−90

−100

680 700 720 740 760

Frequency (MHz)

780 800 820

Figure 39. Adjusted Sideband Suppression vs LO

Frequency and Temperature (750 LTE Band)

G042

−10

−20

−30

Adjusted at 1960MHz − T

A

= 25°C T

A

= −40°C

T

A

= 25°C

T

A

= 85°C

−40

−50

−60

−70

−80

−50

−60

−70

−80

−90

−90

−100

1880 1900 1920 1940 1960 1980 2000 2020 2040

Frequency (MHz)

G044

Figure 41. Adjusted Sideband Suppression vs LO

Frequency and Temperature (PCS Band)

−10

−20

−30

Adjusted at 2600MHz − T

A

= 25°C T

A

= −40°C

T

A

= 25°C

T

A

= 85°C

−40

−100

2500 2525 2550 2575 2600 2625 2650 2675 2700

Frequency (MHz)

G046

Figure 43. Adjusted Sideband Suppression vs LO

Frequency and Temperature (2.6 GHz LTE Band)

−50

−60

−70

−80

−90

−100

870 890 910 930 950

Frequency (MHz)

970 990 1010

Figure 40. Adjusted Sideband Suppression vs LO

Frequency and Temperature (GSM900 Band)

G043

−10

−20

−30

Adjusted at 2140MHz − T

A

= 25°C T

A

= −40°C

T

A

= 25°C

T

A

= 85°C

−40

−50

−60

−70

−80

−50

−60

−70

−80

−90

−90

−100

2060 2080 2100 2120 2140 2160 2180 2200 2220

Frequency (MHz)

G045

Figure 42. Adjusted Sideband Suppression vs LO

Frequency and Temperature (UMTS Band)

−10

−20

−30

Adjusted at 3500MHz − T

A

= 25°C T

A

= −40°C

T

A

= 25°C

T

A

= 85°C

−40

−100

3400 3425 3450 3475 3500 3525 3550 3575 3600

Frequency (MHz)

G047

Figure 44. Adjusted Sideband Suppression vs LO

Frequency and Temperature (WiMAX/LTE Band)

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6.10 Typical Characteristics: No Baseband

V

CC

= 3.3 V; T

A otherwise noted.

= 25°C; LO = 0 dBm, single-ended drive (LOP); and input baseband ports terminated in 50 Ω, unless

−140

−142

−144

−146

−148

−150

−152

−154

−156

−158

−160

−162

−164

−166

−168

−170

0

T

A

= −40°C

T

A

= 25°C

T

A

= 85°C

500 1000 1500 2000 2500 3000 3500 4000

Frequency (MHz)

G031

Figure 45. Output noisE vs LO Frequency (f

LO

) and

Temperature

−140

−142

−144

−146

−148

−150

−152

−154

−156

−158

−160

−162

−164

−166

−168

−170

0

LO Power = −5 dBm

LO Power = 0 dBm

LO Power = 5 dBm

500 1000 1500 2000 2500 3000 3500 4000

Frequency (MHz)

G033

Figure 47. Output Noise vs LO Frequency (f

LO

) AND LO

Drive Level

−144

−146

−148

−150

−152

−154

LO Freq = 948.5 MHz

LO Freq = 1848 MHz

LO Freq = 2167 MHz

−156

−158

−160

−25 −20 −15 −10 −5

RF Output Power (dBm)

0 5

Figure 49. Output Noise vs Output Power

−140

−142

−144

−146

−148

−150

−152

−154

−156

−158

−160

−162

−164

−166

−168

−170

0

V

CC

= 3.15 V

V

CC

= 3.30 V

V

CC

= 3.45 V

500 1000 1500 2000 2500 3000 3500 4000

Frequency (MHz)

G032

Figure 46. Output Noise vs LO Frequency (f

LO

) and Supply

Voltage

−140

−142

−144

−146

−148

−150

−152

−154

−156

−158

−160

−162

−164

−166

−168

−170

0

Gain Control = Off

Gain Control = On

500 1000 1500 2000 2500 3000 3500 4000

Frequency (MHz)

G035

Figure 48. Output Noise vs LO Frequency (f

LO

) and Gain

Select Setting

10

G034

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6.11 Typical Characteristics: Two-Tone Baseband

V

CC

= 3.3 V; T

A

= 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (f

BB

) = 4.5 MHz, 5.5 MHz; baseband I/Q amplitude = 0.5-V

PP

/tone differential sine waves in quadrature with V

CM

= 0.25 V; and broadband output match, unless otherwise noted.

−30

−40

−50

−60

−70

−80

−90

10

0

−10

−20

RF 2nd Harmonic

RF 3rd Harmonic

RF 4th Harmonic

−100

0 500 1000 1500 2000 2500 3000 3500 4000

Frequency (MHz)

G048

Figure 50. RF Harmonics vs LO FRequency (f

LO

)

15

10

5

0

35

30

25

20

60

55

50

45

40

Mean =306.4 mA

StDev = 4.4

Vcc = 3.3 V

T

A

= 25°C

Total Icc (mA)

G065

Figure 52. Nominal Current Consumption Distribution

25

20

15

10

5

0

40

35

30

Mean =304.2 mA

StDev = 5.1

T

A

= 25°C

Total Icc (mA)

G064

Figure 54. Current Consumption Distribution Over V

CC

−30

−40

−50

−60

−70

−80

−90

10

0

−10

−20

LO 2nd Harmonic

LO 3rd Harmonic

LO 4th Harmonic

−100

0 500 1000 1500 2000 2500 3000 3500 4000

Frequency (MHz)

G049

Figure 51. LO Harmonics vs LO Frequency (f

LO

)

40

35

30

Mean =303.8 mA

StDev = 6.9

Vcc = 3.3 V

25

20

15

10

5

0

35

30

25

20

15

10

5

0

Total Icc (mA)

Figure 53. Current Consumption Distribution Over

Temperature

G063

50

45

40

Mean = 28.6 dBm

StDev = 0.4

OIP3 (dBm)

Figure 55. OIP3 Distribution at f

LO

= 2140 MHz

G050

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Typical Characteristics: Two-Tone Baseband (continued)

V

CC

= 3.3 V; T

A

= 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (f

BB

) = 4.5 MHz, 5.5 MHz; baseband I/Q amplitude = 0.5-V

PP otherwise noted.

/tone differential sine waves in quadrature with V

CM

= 0.25 V; and broadband output match, unless

30 40

Mean = 65.5 dBm

StDev = 0.8

Mean = 13.1 dBm

StDev = 0.1

25

35

30

20

25

15 20

15

10

5

0

30

25

20

15

10

5

0

OIP2 (dBm)

Figure 56. OIP2 Distribution at f

LO

= 2140 MHz

G051

Mean = −45.6 dBc

StDev = 1.4

10

5

30

25

20

15

10

5

0

0

12.8

12.9

13.1

13.2

13.3

13.4

13.5

P1dB (dBm)

G052

Figure 57. P1dB Distribution at f

LO

MHz

= 2140 MHz, f

BB

= 5.5

45

40

Mean = −39.3 dBm

StDev = 0.8

35

Unadjusted Sideband Suppression (dBc)

G053

Figure 58. Unadjusted Sideband Suppression DIstribution at f

LO

= 2140 MHz

50

45

Mean = 31.7 dBm

StDev = 0.2

40

35

30

25

20

15

10

5

0

OIP3 (dBm)

Figure 60. OIP3 Distribution at f

LO

= 900 MHz

G055

Unadjusted Carrier Feedthrough (dBm)

G054

Figure 59. Unadjusted Carrier Feedthrough Distribution at f

LO

= 2140 MHz

45

40

Mean = 71.5 dBm

StDev = 0.5

35

30

25

20

15

10

5

0

69 69.5

70 70.5

71 71.5

72 72.5

73 73.5

74

OIP2 (dBm)

G056

Figure 61. OIP2 Distribution at f

LO

= 900 MHz

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Typical Characteristics: Two-Tone Baseband (continued)

V

CC

= 3.3 V; T

A

= 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (f

BB

) = 4.5 MHz, 5.5 MHz; baseband I/Q amplitude = 0.5-V

PP otherwise noted.

/tone differential sine waves in quadrature with V

CM

= 0.25 V; and broadband output match, unless

50

40

35

30

25

55

50

45

20

15

10

5

Mean = 13.2 dBm

StDev = 0.1

0

13.1

13.2

13.3

13.4

13.5

13.6

P1dB (dBm)

G057

Figure 62. P1dB distribution at f

LO

= 900 MHz, f

BB

= 5.5 MHz

45

40

35

30

25

20

15

10

5

Mean = −43.8 dBc

StDev = 0.9

0

−48 −47 −46 −45 −44 −43 −42 −41 −40

Unadjusted Sideband Suppression (dBc)

G058

Figure 63. Unadjusted Sideband Suppression Distribution at f

LO

= 900 MHz

50

45

Mean = −48.5 dBm

StDev = 4.9

40

35

30

25

20

15

10

5

0

Unadjusted Carrier Feedthrough (dBm)

G059

Figure 64. Unadjusted Carrier Feedthrough Distribution at f

LO

= 900 MHz

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7 Detailed Description

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7.1 Overview

TRF37T05 is a low-noise direct quadrature modulator with high linearity, capable of converting complex modulated signals from baseband or IF directly to RF. With high-performance and superior-linearity , TRF37T05 is an ideal device to up-convert to RF frequencies of 300 MHz through 4 GHz. With appropriate matching network, optimal performance can be obtained. The modulator is implemented as a double-balanced mixer.

TRF37T05 has a RF output block which consists of a differential-to-single-ended converter that is capable of directly driving a single-ended 50Ω load. The TRF37T05 requires a 0.25-V common-mode voltage for optimal linearity performance. With a fast power-down pin, TRF37T05 can be used to reduce power dissipation in TDD application while maintaining optimized adjusted carrier feed-through performance. TRF37T05 is available in an

REG-24 VQFN package.

7.2 Functional Block Diagram

PD 1

GND 2

LOP 3

LOM

4

GND 5

GC 6

0/90

S

18 VCC

17 GND

16

RF

OUT

15 GND

14 GND

13

GND

7.3 Feature Description

7.3.1 Gain Control Feature

TRF37T05 has a specific GC pin which is used for gain control. The GC pin is gain control digital input which is internally pulled down. When driving low or left open, modulator is in low gain mode. With driving high externally, the modulator is in high gain mode. This 1 bit gain step control feature offers a typical 3-dB gain increase in high gain mode. If power optimization is desired, driving this pin low can easily put the modulator into low gain mode.

7.4 Device Functional Modes

7.4.1 Power Down Mode

TRF37T05 features a PD pin to power down the modulator. The PD pin is internally pulled down. When the power-down digital input pin is driven high, the RF output buffer is off. This feature provides a fast power-down which can be used to reduce power dissipation in time division duplexing applications while maintaining optimized adjusted carrier feed-through performance.

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8 Application and Implementation

TRF37T05

SLWS239A – JUNE 2013 – REVISED NOVEMBER 2015

NOTE

Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality.

8.1 Application Information

TRF37T05 is a quadrature modulator for up-converting the in-phase (I) and the quadrature-phase (Q) signals to radio frequency (RF) in the transmit chain. Typically, the device is used between the digital-to-analog converter

(DAC) and the RF power amplifier.

8.2 Typical Application

BBI

49.9 W 49.9 W

LO

Input

49.9 W

PD

GND

LOP

LOM

GND

GC

3

4

1

2

5

6

Thermal Pad

18

17

16

15

14

13

VCC

GND

RF

OUT

GND

6.8 pF

GND

GND

RF

Output

0.2 pF

49.9 W 49.9 W

BBQ

(1) Pin 1 (PD) and Pin 6 (GC) are internally pulled down.

Figure 65. Typical Application Circuit

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Typical Application (continued)

8.2.1 Design Requirements

For this design example, use the parameters shown in

Table 1 .

NAME

BBQM

BBQP

LOP

LOM

RFOUT

GC

PD

VCC

PIN NO

9

10

3

4

16

6

1

18,24

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Table 1. Pin Termination Requirements and Limitations

DESCRIPTION

Base-band in-quadrature input: negative terminal. Input impedance is 8 K Ω//4.6 pF. Optimal linearity is obtained if V

CM is 0.25 V. Normally terminated in 50 Ω

Base-band in-quadrature input: positive terminal. Input impedance is 8 K

Ω//4.6 pF. Optimal linearity is obtained if V

CM is 0.25 V. Normally terminated in 50 Ω

Local oscillator input: positive terminal. This is preferred port when driving single ended. Normally AC coupled and terminated in 50 Ω

Local oscillator input: negative terminal. When driving LO single-ended, normally AC coupled and terminated in 50 Ω.

RF output. Normally using optimal matching circuits to match RF output to 50 Ω. Normally AC coupled.

Gain control digital input. Internally pulled down. When driving high, get 3 dB gain increase of RF output.

Power down digital input. Internally pulled down. When driving high, the modulator is off.

3.3-V power supply. Can be tied together and source from a single clean supply. Each pin should be properly RF bypassed and decoupled.

8.2.2 Detailed Design Procedure

8.2.2.1 Baseband Inputs

The baseband inputs consist of the in-phase signal (I) and the Quadrature-phase signal (Q). The I and Q lines are differential lines that are driven in quadrature. The nominal drive level is 1-V

PP differential on each branch.

The baseband lines are nominally biased at 0.25-V common-mode voltage (V

CM operate with a V

CM

); however, the device can in the range of 0 V to 0.5 V. The baseband input lines are normally terminated in 50 though it is possible to modify this value if necessary to match to an external filter load impedance requirement.

Ω,

8.2.2.2 LO Input

The LO inputs can be driven either single-ended or differentially. There is no significant performance difference between either option with the exception of the sideband suppression. If driven single-ended, either input can be used, but LOP (pin 3) is recommended for best broadband performance of sideband suppression. When driving in single-ended configuration, simply ac-couple the unused port and terminate in 50 Ω. The comparison of the sideband suppression performance is shown in

Figure 71

for driving the LO single-ended from either pin and for driving the LO input differentially.

8.2.2.3 RF Output

The RF output must be ac-coupled and can drive a 50Ω load. The suggested output match provides the best broadband performance across the frequency range of the device. It is possible to modify the output match to optimize performance within a selected band if needed. The optimized matching circuits are to match the RF output impedances to 50 Ω.

Figure 72

shows a slightly better OIP3 performance at the frequency above 1850 MHz with an 0.2-pF matching capacitor.

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8.2.2.4 350-MHz Operation

A different matching circuit, as shown in

Figure 66 , could also be applied to improve the performance for the

frequency from 300 MHz to 400 MHz.

LO

Input

180 pF 40 nH

2.2 pF

PD

GND

LOP

LOM

49.9 W

GND

GC

3

4

1

2

5

6

18

VCC

17

GND

16

RF

OUT

15

GND

14

GND

13

GND

39 pF

18 pF

RF

Output

Figure 66. Matching Components for Operation Centered at 350 MHz

Figure 73

and

Figure 74

show a slight improvement in OIP3 performance at frequencies above 1850 MHz with an 0.2-pF matching capacitor.

8.2.2.5 DAC to Modulator Interface Network

For optimum linearity and dynamic range, a digital-to-analog converter (DAC) can interface directly with the

TRF37T05 modulator. It is imperative that the common-mode voltage of the DAC and the modulator baseband inputs be properly maintained. With the proper interface network, the common-mode voltage of the DAC can be translated to the proper common-mode voltage of the modulator. The TRF37T05 common-mode voltage is typically 0.25 V, and is ideally suited to interface with the DAC3482 / 3484 (DAC348x) family because the common-mode voltages of both devices are the same; there is no translation network required. The interface network is shown in

Figure 67 .

LO

50 W 50 W

50 W 50 W

DAC348x

0/90

S

50 W 50 W

50 W 50 W

TRF3705

Figure 67. DAC348x Interface with the TRF37T05 Modulator

The DAC348x requires a load resistor of 25

Ω per branch to maintain its optimum voltage swing of 1-V

PP differential with a 20-mA max current setting. The load of the DAC is separated into two parallel 50Ω resistors placed on the input and output side of the low-pass filter. This configuration provides the proper resistive load to the DAC while also providing a convenient 50Ω source and load termination for the filter.

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8.2.2.6 DAC348x with TRF37T05 Modulator Performance

The combination of the DAC348x driving the TRF37T05 modulator yields excellent system parameters suitable for high-performance applications. As an example, the following sections illustrate the typical modulated adjacent channel power ratio (ACPR) for common telecom standards and bands. These measurements were taken on the

DAC348x evaluation board .

8.2.2.6.1

WCDMA

The adjacent channel power ratio (ACPR) performance using a single-carrier WCDMA signal in the UMTS band is shown in

Figure 68 .

Figure 68. Single-Carrier WCDMA ACPR, IF = 30 MHz, LO Frequency = 2110 MHz

A marginal improvement in OIP3 and output noise performance can be observed by increasing the LO drive power, resulting in slightly improved ACPR performance. The ACPR performance versus LO drive level is plotted in

Figure 75

across common frequencies to illustrate the amount of improvement that is possible.

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8.2.2.6.2

LTE

ACPR performance using a 10 MHz LTE signal in the 700-MHz band is shown in

Figure 69 .

Figure 69. 10 MHz LTE ACPR, IF = 30 MHz, LO Frequency = 718 MHz

8.2.2.6.3

MC-GSM

ACPR performance using a four-carrier MC-GSM signal in the 1800-MHz band is shown in

Figure 70 .

Figure 70. Four-Carrier MC-GSM, IF = 30 MHz ACPR, LO Frequency = 1812 MHz

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8.2.3 Application Curves

−30

−40

−50

0

−10

V

CM

V

CC

= 0.25 V

= 3.3 V

LO = 0 dBm

GC = Off

−20

−78

−79

−80

LOP_SE

LOM_SE

LO_Diff

−60

0 500 1000 1500 2000 2500 3000 3500 4000

Frequency (MHz)

G067

Figure 71. Unadjusted Sideband Suppression (SBS) vs LO

Drive Options

4

2

T

A

T

A

T

A

= −40°C

= 25°C

= 85°C

0

−2

−4

−6

−8

V

CM

= 0.25 V

V

CC

= 3.3 V

LO = 0 dBm

GC = Off

−10

200 250 300 350

Frequency (MHz)

400 450 500

G069

Figure 73. Output Power with 350-MHz Matching Circuit

−75

−76

V

CM

V

CC

= 0.25 V

= 3.3 V

LO = 0 dBm

GC = Off

−77

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34

32

30

28

26

24

22

20

18

16

14

12

V

CM

= 0.25 V

V

CC

= 3.3 V

LO = 0 dBm

GC = Off

With 0.2 pF cap

Without 0.2 pF cap

10

0 500 1000 1500 2000 2500 3000 3500 4000

Frequency (MHz)

G068

Figure 72. OIP3 with and without a Shunt 0.2-pF Matching

Capacitor at the RF Port

25

20

15

40

35

V

CM

= 0.25 V

V

CC

= 3.3 V

LO = 0 dBm

GC = Off

30

10

200 250 300 350

Frequency (MHz)

400

T

A

T

A

T

A

= −40°C

= 25°C

= 85°C

450 500

G070

Figure 74. OIP3 with 350-MHz Matching Circuit

748 MHz

942.5 MHz

1960 MHz

2140 MHz

2600 MHz

−81

−5 0 5

LO Power (dBm)

10 15

G071

Figure 75. Single-Carrier WCDMA ACPR Performance vs LO Power

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TRF37T05

SLWS239A – JUNE 2013 – REVISED NOVEMBER 2015

9 Power Supply Recommendations

The TRF37T05 is powered by supplying a nominal 3.3 V to pins 18 and 24. These supplies can be tied together and sourced from a single clean supply. Proper RF bypassing should be placed close to each power supply pin.

Ground pin connections should have at least one ground via close to each ground pin to minimize ground inductance. The PowerPAD™ must be tied to ground, preferably with the recommended ground via pattern to provide a good thermal conduction path to the alternate side of the board and to provide a good RF ground for the device. (Refer to

Layout Guidelines

for additional information.)

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10 Layout

Populated RoHS-compliant evaluation boards are available for testing the TRF37T05 as a stand-alone device.

Contact your local TI representative for information on ordering these evaluation modules, or see the TRF37T05 product folder on the TI website. In addition, the TRF37T05 can be evaluated with the DAC348x (quad/dual 16bit, 1.25GSPS) EVM driving the baseband inputs through a seamless interface at 0.25V common-mode voltage.

10.1 Layout Guidelines

The TRF37T05 device is fitted with a ground slug on the back of the package that must be soldered to the printed circuit board (PCB) ground with adequate ground vias to ensure a good thermal and electrical connection. The recommended via pattern and ground pad dimensions are shown in

Figure 76 . The

recommended via diameter is 10 mils (0.10 in or 0,25 mm). The ground pins of the device can be directly tied to the ground slug pad for a low-inductance path to ground. Additional ground vias may be added if space allows.

Decoupling capacitors at each of the supply pins are strongly recommended. The value of these capacitors should be chosen to provide a low-impedance RF path to ground at the frequency of operation. Typically, the value of these capacitors is approximately 10 pF or lower.

The device exhibits symmetry with respect to the quadrature input paths. It is recommended that the PCB layout maintain this symmetry in order to ensure that the quadrature balance of the device is not impaired. The I/Q input traces should be routed as differential pairs and the respective lengths all kept equal to each other. On the RF traces, maintain proper trace widths to keep the characteristic impedance of the RF traces at a nominal 50

Ω.

10.2 Layout Example

Æ 0,254

2,45

0,508

1,16

Note: Dimensions are in millimeters (mm).

Figure 76. PCB Ground Via Layout Guide

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11 Device and Documentation Support

TRF37T05

SLWS239A – JUNE 2013 – REVISED NOVEMBER 2015

11.1 Device Support

11.1.1 Definition of Specifications

11.1.1.1 Carrier Feedthrough

This specification measures the power of the local oscillator component that is present at the output spectrum of the modulator. The performance depends on the dc offset balance within the baseband input lines. Ideally, if all of the baseband lines were perfectly matched, the carrier (that is, the LO) would be naturally suppressed; however, small dc offset imbalances within the device allow some of the LO component to feed through to the output. This parameter is expressed as an absolute power in dBm, and is independent of the RF output power and the injected LO input power.

It is possible to adjust the baseband dc offset balance to suppress the output carrier component. Devices such as the DAC348x DAC family have dc offset adjustment capabilities specifically for this function. The Adjusted

Carrier Feedthrough graphs (see

Figure 33

through

Figure 38 ) optimize the performance at the center of the

band at room temperature. Then, with the adjusted dc offset values held constant, the parameter is measured over the frequency band and across the temperature extremes. The typical performance plots provide an indication of how well the adjusted carrier suppression can be maintained over frequency and temperature with only one calibration point.

11.1.1.2 Sideband Suppression

This specification measures the suppression of the undesired sideband at the output of the modulator relative to the desired sideband. If the amplitude and phase within the I and Q branch of the modulator were perfectly matched, the undesired sideband (or image) would be naturally suppressed. Amplitude and phase imbalance in the I and Q branches result in the increase of the undesired sideband. This parameter is measured in dBc relative to the desired sideband.

It is possible to adjust the relative amplitude and phase balance within the baseband lines to suppress the unwanted sideband. Devices such as the DAC348x DAC family have amplitude and phase adjustment control specifically for this function. The Adjusted Sideband Suppression graphs (refer to

Figure 39

through

Figure 44 )

optimize the performance at the center of the band at room temperature. Then, with the adjusted amplitude and phase values held constant, the parameter is measured over the frequency band and across the temperature extremes. The performance plots provide an indication of how well the adjusted sideband suppression can be maintained over frequency and temperature with only one calibration point.

11.1.1.3 Output Noise

The output noise specifies the absolute noise power density that is output from the RF

OUT pin (pin 16). This parameter is expressed in dBm/Hz. This parameter, in conjunction with the OIP3 specification, indicates the dynamic range of the device. In general, at high output signal levels the performance is limited by the linearity of the device; at low output levels, on the other hand, the performance is limited by noise. As a result of the higher gain and output power of the TRF3705 compared to earlier devices, it is expected that the noise density is slightly higher as well. With its increased gain and high OIP3 performance, the overall dynamic range of the

TRF3705 is maintained at exceptional levels.

11.1.1.4 Definition of Terms

A simulated output spectrum with two tones is shown in

Figure 77 , with definitions of various terms used in this

data sheet.

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Device Support (continued)

www.ti.com

2n d

O rd er

3

IM rd

O

IM rd er

D es ire d

Si gn al

U nw an te d

S id eb an d

LS

B

2

LS

B

=

1

LO

=

LO F

2n dL

=

(F

B

B

2

F

3rd

L

=

- F

BB

1

F1

2F

=

F2

F

1-F

2

1

=

)+

LO

F

3rd

H

+

F

BB

2

LO

+

=

2F

LO

2-F

1

F

2n dH

LO

F

B

B

2

- F

BB

1

=

(F

BB

2

F

BBn

= Baseband Frequency

Fn = RF Frequency

F

3rdH/L

= 3 rd

Order Intermodulation Product Frequency (High Side / Low Side)

F

2ndH/L

= 2 nd

Order Intermodulation Product Frequency (High Side / Low Side)

LO = Local Oscillator Frequency

LSBn = Lower Sideband Frequency

+

F

B

B1

)+

LO f

Figure 77. Graphical Illustration of Common Terms

11.2 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of

Use .

TI E2E™ Online Community

TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.

Design Support

TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

11.3 Trademarks

PowerPAD, E2E are trademarks of Texas Instruments.

All other trademarks are the property of their respective owners.

11.4 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.

12 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

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PACKAGE OPTION ADDENDUM

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3-Nov-2015

PACKAGING INFORMATION

Orderable Device

TRF37T05IRGER

Status

(1)

ACTIVE

Package Type Package

Drawing

VQFN RGE

Pins Package

24

Qty

Eco Plan

(2)

3000 Green (RoHS

& no Sb/Br)

Lead/Ball Finish

(6)

CU NIPDAU

MSL Peak Temp

(3)

Level-2-260C-1 YEAR

Op Temp (°C)

-40 to 85

Device Marking

(4/5)

TR37T05

IRGE

TRF37T05IRGET ACTIVE VQFN RGE 24 250 Green (RoHS

& no Sb/Br)

CU NIPDAU Level-2-260C-1 YEAR

(1)

The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

OBSOLETE: TI has discontinued the production of the device.

-40 to 85 TR37T05

IRGE

(2)

Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details.

TBD: The Pb-Free/Green conversion plan has not been defined.

Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.

Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.

Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)

(3)

MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4)

There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5)

Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device.

(6)

Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.

TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

Addendum-Page 1

Samples

PACKAGE OPTION ADDENDUM

3-Nov-2015 www.ti.com

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

Addendum-Page 2

www.ti.com

TAPE AND REEL INFORMATION

PACKAGE MATERIALS INFORMATION

3-Nov-2015

*All dimensions are nominal

Device

TRF37T05IRGER

TRF37T05IRGET

Package

Type

Package

Drawing

VQFN

VQFN

RGE

RGE

Pins

24

24

SPQ

3000

250

Reel

Diameter

(mm)

Reel

Width

W1 (mm)

330.0

12.4

330.0

12.4

A0

(mm)

4.3

4.3

B0

(mm)

4.3

4.3

K0

(mm)

P1

(mm)

W

(mm)

Pin1

Quadrant

1.5

1.5

8.0

8.0

12.0

12.0

Q2

Q2

Pack Materials-Page 1

www.ti.com

PACKAGE MATERIALS INFORMATION

3-Nov-2015

*All dimensions are nominal

Device

TRF37T05IRGER

TRF37T05IRGET

Package Type Package Drawing Pins

VQFN

VQFN

RGE

RGE

24

24

SPQ

3000

250

Length (mm) Width (mm) Height (mm)

338.1

338.1

338.1

338.1

20.6

20.6

Pack Materials-Page 2

IMPORTANT NOTICE

Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment.

TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarily performed.

TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and applications using TI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provide adequate design and operating safeguards.

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