TDE1897R TDE1898R 0.5A HIGH-SIDE DRIVER INDUSTRIAL INTELLIGENT POWER SWITCH

®

TDE1897R

TDE1898R

0.5A HIGH-SIDE DRIVER

INDUSTRIAL INTELLIGENT POWER SWITCH

0.5A OUTPUT CURRENT

18V TO 35V SUPPLY VOLTAGE RANGE

INTERNAL CURRENT LIMITING

THERMAL SHUTDOWN

OPEN GROUND PROTECTION

INTERNAL NEGATIVE VOLTAGE CLAMPING

TO V

S

- 45V FOR FAST DEMAGNETIZATION

DIFFERENTIAL INPUTS WITH LARGE COM-

MON MODE RANGE AND THRESHOLD

HYSTERESIS

UNDERVOLTAGE LOCKOUT WITH HYSTERESIS

OPEN LOAD DETECTION

TWO DIAGNOSTIC OUTPUTS

OUTPUT STATUS LED DRIVER

DESCRIPTION

The TDE1897R/TDE1898R is a monolithic Intelligent Power Switch in Multipower BCD Technol-

BLOCK DIAGRAM

MULTIPOWER BCD TECHNOLOGY

Minidip SIP9 SO20

ORDERING NUMBERS:

TDE1897RDP TDE1898RSP TDE1897RFP

TDE1898RDP TDE1898RFP ogy, for driving inductive or resistive loads. An internal Clamping Diode enables the fast demagnetization of inductive loads.

Diagnostic for CPU feedback and extensive use of electrical protections make this device inherently indistructible and suitable for general purpose industrial applications.

September 2003

1/12

This is advanced information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

TDE1897R - TDE1898R

PIN CONNECTIONS (Top view)

Minidip

SO20

SIP9

ABSOLUTE MAXIMUM RATINGS (Minidip pin reference)

Symbol

V

S

V

S

– V

O

V i

V i

I i

I

O

E l

P tot

T op

T stg

Parameter

Supply Voltage (Pins 3 - 1) (T

W

< 10ms)

Supply to Output Differential Voltage. See also V

Cl

3-2 (Pins 3 - 2)

Input Voltage (Pins 7/8)

Differential Input Voltage (Pins 7 - 8)

Input Current (Pins 7/8)

Output Current (Pins 2 - 1). See also ISC

Energy from Inductive Load (T

J

= 85

°

C)

Power Dissipation. See also THERMAL CHARACTERISTICS.

Operating Temperature Range (T amb

)

Storage Temperature

THERMAL DATA

Symbol

R th j-case

R th j-amb

Description

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

Max.

Minidip

100

Value

50 internally limited

-10 to V

S

+10

43

20 internally limited

200 internally limited

-25 to +85

-55 to 150

Sip SO20

10

70 90

Unit

°

C/W

°

C/W

Unit

V

V

V

V mA

A mJ

W

°

C

°

C

2/12

TDE1897R - TDE1898R

ELECTRICAL CHARACTERISTICS (V

S

= 24V; T amb

= –25 to +85°C, unless otherwise specified)

Symbol

V smin

3

Parameter

Supply Voltage for Valid

Diagnostics

Supply Voltage (operative)

Test Condition

I diag

> 0.5mA @ V dg1

= 1.5V

Note Vil < 0.8V, Vih > 2V @ (V+In > V–In); Minidip pin reference.

All test not dissipative.

Min.

9

V s

3

I q

3

V sth1

V sth2

3

V shys

I sc

V don

3-2

I oslk

2

V ol

2

V cl

3-2

I old

2

V id

7-8

I ib

7-8

V ith

7-8

V iths

7-8

R id

7-8

I ilk

7-8

V oth1

2

V oth2

2

V ohys

2

I osd

4

V osd

3-4

I oslk

4

V dgl

5/6

I dglk

5/6

18

Quiescent Current

I out

= I os

= 0

Undervoltage Threshold 1

Undervoltage Threshold 2

Supply Voltage Hysteresis

Short Circuit Current

Output Voltage Drop

V il

V ih

(See fig. 1); T amb

= 0 to +85

°

C

(See fig. 1); Tamb = 0 to +85

°

C

(See fig. 1); T amb

= 0 to +85

°

C

V

S

= 18 to 35V; R

L

= 1

Ω

@ I out

= 625mA; T j

@ I out

= 625mA; T j

= 25

°

C

= 125

°

C

Output Leakage Current

Low State Out Voltage

@ V i

= V il

, V o

= 0V

@ V i

= V il

; R

L

=

∞

Internal Voltage Clamp (V

S

- V

O

) @ I

O

= -500mA

Open Load Detection Current V i

= V ih

; T amb

= 0 to +85

°

C

Common Mode Input Voltage

Range (Operative)

Input Bias Current

Input Threshold Voltage

V

S

= 18 to 35V,

V

S

- V id

7-8 < 37V

V i

= –7 to 15V; –In = 0V

V+In > V–In

V+In > V–In Input Threshold Hysteresis

Voltage

Diff. Input Resistance

Input Offset Current

11

0.4

0.75

45

0.5

–7

–700

0.8

50

@ 0 < +In < +16V; –In = 0V

@ –7 < +In < 0V; –In = 0V

V+In = V–In +Ii

0V < V i

<5.5V –Ii

–20

–75

–In = GND +Ii

0V < V+In <5.5V –Ii –250

+In = GND +Ii

0V < V–In <5.5V –Ii

(See fig. 1)

–100

–50

Output Status Threshold 1

Voltage

Output Status Threshold 2

Voltage

Output Status Threshold

Hysteresis

Output Status Source Current

Active Output Status Driver

Drop Voltage

Output Status Driver Leakage

Current

Diagnostic Drop Voltage

Diagnostic Leakage Current

V fdg

5/6-3 Clamping Diodes at the

Diagnostic Outputs.

Voltage Drop to V

S

(See fig. 1)

(See fig. 1)

V out

> V oth1

, V os

= 2.5V

V s

T

– V amb os

@ I os

= 2mA;

= -25 to 85

°

C

V out

< V oth2

, V os

= 0V

V

S

= 18 to 35V

D1 / D2 = L @ I diag

= 0.5mA

D1 / D2 = L @ I diag

= 3mA

D1 / D2 =H @ 0 < V dg

< V s

V

S

= 15.6 to 35V

@ I diag

= 5mA; D1 / D2 = H

9

0.3

2

Typ.

24

2.5

4.5

1

250

400

0.8

1.4

400

150

–25

+10

–125

–30

–15

0.7

Max.

35

35

4

7.5

700

2

400

+20

+50

12

2

4

5

25

250

1.5

25

2

1.5

55

9.5

15

15.5

3

1.5

425

600

300

Unit

V

µ

A

V mV

K

Ω

K

Ω

µ

A

µ

A

µ

A

µ

A

µ

A

µ

A

V

V

V mA

V

µ

A mV

V

µ

A

V

V mA mA

V

V

V

A mV mV

µ

A

V

V mA

V

3/12

TDE1897R - TDE1898R

SOURCE DRAIN NDMOS DIODE

Symbol

V fsd

2-3

I fp

2-3 t rr

2-3 t fr

2-3

Parameter

Forward On Voltage

Forward Peak Current

Reverse Recovery Time

Forward Recovery Time

THERMAL CHARACTERISTICS (*)

Test Condition

@ I fsd

= 625mA t = 10ms; d = 20%

I f

= 625mA di/dt = 25A/

µ s

Θ

Lim Junction Temp. Protect.

T

H

Thermal Hysteresis

SWITCHING CHARACTERISTICS (V

S

= 24V; R

L

= 48

Ω

) (*) t t t on off d

Turn on Delay Time

Turn off Delay Time

Input Switching to Diagnostic

Valid

Note Vil < 0.8V, Vih > 2V @ (V+In > V–In); Minidip pin reference. (*) Not tested.

Figure 1

Min.

Typ.

1

Max.

1.5

2

200

50

Unit

V

A ns ns

135 150

30

°

C

°

C

100

20

100

µ s

µ s

µ s

DIAGNOSTIC TRUTH TABLE

Normal Operation

Short to V

S

TDE1898R

Output DMOS Open

Overtemperature

Diagnostic Conditions

Open Load Condition (I o

< I

Short Circuit to Ground (I

O old

= I

)

SC

) (**) TDE1897R

Supply Undervoltage (V

S

< V sth1

in the falling phase of the supply voltage; V

S

< V sth2

in the rising phase of the supply voltage)

Input

L

H

L

H

L

H

H

H

L

H

L

H

L

H

Output

L

H

L

H

H

H

<H (*)

H

L

L

L

L

L

L

L

Diag1

H

H

H

L

L

L

H

H

H

H

L

H

H

L

L

Diag2

H

H

H

H

H

H

L

L

L

L

L

H

H

H

H

(*) According to the intervention of the current limiting block.

(**) A cold lamp filament, or a capacitive load may activate the current limiting circuit of the IPS, when the IPS is initially turned on. TDE1897 uses Diag2 to signal such condition, TDE1898 does not.

4/12

APPLICATION INFORMATION

DEMAGNETIZATION OF INDUCTIVE LOADS

An internal zener diode, limiting the voltage across the Power MOS to between 45 and 55V

(V cl

), provides safe and fast demagnetization of inductive loads without external clamping devices.

The maximum energy that can be absorbed from an inductive load is specified as 200mJ (at

T j

= 85

°

C).

To define the maximum switching frequency three points have to be considered:

1) The total power dissipation is the sum of the

On State Power and of the Demagnetization

Energy multiplied by the frequency.

2) The total energy W dissipated in the device during a demagnetization cycle (figg. 2, 3) is:

W

=

V cl

L

R

L

[

I o

–

V cl

– V s

R

L

log



1

+





V s

V cl

– V s







]

Where:

V cl

= clamp voltage;

L = inductive load;

R

L

= resistive load;

Vs = supply voltage;

I

O

= I

LOAD

3) In normal conditions the operating Junction temperature should remain below 125

°

C.

TDE1897R - TDE1898R

Figure 3: Demagnetization Cycle Waveforms

Figure 2: Inductive Load Equivalent Circuit

Figure 4: Normalized R

DSON

vs. Junction

Temperature

D93IN018

α

1.8

1.6

α

=

RDSON (Tj)

RDSON (Tj=25˚C)

1.4

1.2

1.0

0.8

0.6

-25 0 25 50 75 100 125 Tj (˚C)

5/12

TDE1897R - TDE1898R

WORST CONDITION POWER DISSIPATION IN

THE ON-STATE

In IPS applications the maximum average power dissipation occurs when the device stays for a long time in the ON state. In such a situation the internal temperature depends on delivered current (and related power), thermal characteristics of the package and ambient temperature.

At ambient temperature close to upper limit

(+85°C) and in the worst operating conditions, it is possible that the chip temperature could increase so much to make the thermal shutdown procedure untimely intervene.

Our aim is to find the maximum current the IPS can withstand in the ON state without thermal shutdown intervention, related to ambient temperature. To this end, we should consider the following points:

1) The ON resistance R

DSON

of the output

NDMOS (the real switch) of the device increases with its temperature.

Experimental results show that silicon resistivity increases with temperature at a constant rate, rising of 60% from 25°C to 125°C.

The relationship between R

DSON

and temperature is therefore:

R

DSON

=

R

DSON0

(

1

+

k

)

(

T j

−

25

)

where:

T j

is the silicon temperature in °C

R

DSON0

is R

DSON

at T j

=25°C

k is the constant rate (k

=

4.711

⋅

(see fig. 4).

10

−

3

)

2) In the ON state the power dissipated in the device is due to three contributes: a) power lost in the switch:

P out

=

I rent); out

2

⋅

R

DSON

(I out

is the output curb) power due to quiescent current in the ON state Iq, sunk by the device in addition to

I out

: P q

=

I q

⋅

V s

(V s

is the supply voltage); c) an external LED could be used to visualize the switch state (OUTPUT STATUS pin).

Such a LED is driven by an internal current source (delivering I os

) and therefore, if V os

is the voltage drop across the LED, the dissipated power is: P os

=

I os

⋅

(

V s

−

V os

)

.

Thus the total ON state power consumption is given by:

P on

=

P out

+

P q

+

P os

(1)

In the right side of equation 1, the second and

6/12 the third element are constant, while the first one increases with temperature because

R

DSON

increases as well.

3) The chip temperature must not exceed

Θ

Lim in order do not lose the control of the device.

The heat dissipation path is represented by the thermal resistance of the system deviceboard-ambient (R th

). In steady state conditions, this parameter relates the power dissipated P on

to the silicon temperature T j

and the ambient temperature T amb

:

T j

−

T amb

=

P on

⋅

R th

(2)

From this relationship, the maximum power P on which can be dissipated without exceeding

Θ

Lim at a given ambient temperature T amb

is:

P on

=

Θ

Lim

−

T amb

R th

Replacing the expression (1) in this equation and solving for I out

, we can find the maximum current versus ambient temperature relationship:

I outx

=

√

R

DSONx

−

P os where R

DSON x is R

DSON

at T j

=

Θ

Lim. Of course, I outx

values are top limited by the maximum operative current I outx

(500mA nominal).

From the expression (2) we can also find the maximum ambient temperature T amb

at which a given power P on

can be dissipated:

= Θ

Lim

−

T amb

= Θ

Lim

(

I out

2

⋅

R

−

P on

⋅

R th

=

DSONx

+

P q

+

P os

)

⋅

R th

In particular, this relation is useful to find the maximum ambient temperature T ambx

at which I outx

can be delivered:

T ambx

= Θ

Lim

− (

+

P q

+

P

I outx

2 ⋅

R

DSONx

+ os

) ⋅

R th

(4)

Referring to application circuit in fig. 5, let us consider the worst case:

- The supply voltage is at maximum value of industrial bus (30V instead of the 24V nominal value). This means also that I outx

rises of 25%

(625mA instead of 500mA).

- All electrical parameters of the device, concerning the calculation, are at maximum values.

- Thermal shutdown threshold is at minimum value.

- No heat sink nor air circulation (R th

equal to

R thj-amb

).

Therefore:

V s

= 30V, R

DSON0

= 0.6

Ω

, I q

V os

= 2.5V,

Θ

Lim = 135°C

= 6mA, I os

= 4mA @

R thj-amb

= 100°C/W (Minidip); 90°C/W (SO20);

70°C/W (SIP9)

It follows:

I outx

= 0.625mA, R

DSONx

= 1.006

Ω

, P q

P os

= 110mW

= 180mW,

TDE1897R - TDE1898R

From equation 4, we can find:

T ambx

= 66.7°C (Minidip);

73.5°C (SO20);

87.2°C (SIP9).

Therefore, the IPS TDE1897/1898, although guaranteed to operate up to 85°C ambient temperature, if used in the worst conditions, can meet some limitations.

SIP9 package, which has the lowest R thj-amb

, can work at maximum operative current over the entire ambient temperature range in the worst conditions too. For other packages, it is necessary to consider some reductions.

With the aid of equation 3, we can draw a derating curve giving the maximum current allowable versus ambient temperature. The diagrams, computed using parameter values above given, are depicted in figg. 6 to 8.

If an increase of the operating area is needed, heat dissipation must be improved (R th

reduced) e.g. by means of air cooling.

Figure 5: Application Circuit.

DC BUS 24V +/-25%

+Vs

+IN

-IN

+

-

µ

P POLLING

D1

D2

GND

CONTROL

LOGIC

Ios

OUTPUT STATUS

OUTPUT

LOAD

D93IN014

7/12

TDE1897R - TDE1898R

Figure 6: Max. Output Current vs. Ambient

Temperature (Minidip Package,

R th j-amb

= 100

°

C/W)

D93IN015

(mA)

600

500

400

300

200

100

0

0 20 40 60 80 100 (

°

C)

Figure 8: Max. Output Current vs. Ambient

Temperature (SIP9 Package,

R th j-amb

= 70

°

C/W)

D93IN017

(mA)

600

500

400

300

200

100

0

0 20 40 60 80 100 (˚C)

Figure 7: Max. Output Current vs. Ambient

Temperature (SO20 Package,

R th j-amb

= 90

°

C/W)

D93IN016

(mA)

600

500

400

300

200

100

0

0 20 40 60 80 100 (˚C)

8/12

I

L e4

F

Z e e3

D

E a1

B b b1

DIM.

A

mm inch

MIN.

TYP.

MAX.

MIN.

TYP.

MAX.

3.32

0.131

0.51

1.15

0.356

0.204

7.95

1.65

0.55

0.304

0.020

0.045

0.014

0.008

10.92

9.75

0.313

0.065

0.022

0.012

0.430

0.384

2.54

7.62

7.62

0.100

0.300

0.300

3.18

6.6

5.08

3.81

1.52

0.125

0.260

0.200

0.150

0.060

TDE1897R - TDE1898R

OUTLINE AND

MECHANICAL DATA

Minidip

9/12

TDE1897R - TDE1898R

D d1 e e3

C c1 c2

A a1

B

B3 b1 b3

L3

L4

M

L

L1

L2

N

P

DIM.

mm inch

MIN.

TYP.

MAX.

MIN.

TYP.

MAX.

2.7

7.1

3

23

24.8

0.106

0.280

0.118

0.90

0.976

0.5

0.020

0.85

1.6

0.033

0.063

3.3

0.43

1.32

0.130

0.017

0.052

21.2

0.835

14.5

2.54

20.32

0.571

0.100

0.800

3.1

0.122

3

17.6

0.118

0.693

17.4

0.25

17.85

0.685

0.010

0,702

3.2

1

0.126

0.039

0.15

0.006

D

P

M

N

OUTLINE AND

MECHANICAL DATA

SIP9

c2

C

1 9 e3

B

B3 b3 b1 e

SIP9

10/12

C

D

E

A1

B h

L e

H

K

DIM.

A

mm inch

MIN.

TYP.

MAX.

MIN.

TYP.

MAX.

2.35

2.65

0.093

0.104

0.1

0.33

0.23

12.6

7.4

10

0.25

0.4

1.27

0.3

0.51

7.6

10.65

0.004

0.013

0.32

0.009

13 0.496

0.291

0.394

0.75

0.010

1.27

0.016

0˚ (min.)8˚ (max.)

0.050

0.419

0.030

0.050

0.012

0.020

0.013

0.512

0.299

B e

TDE1897R - TDE1898R

OUTLINE AND

MECHANICAL DATA

SO20

L

A

K h x 45˚

H

A1

C

D

20

1

11

E

SO20MEC

11/12

TDE1897R - TDE1898R

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics.

All other names are the property of their respective owners

© 2003 STMicroelectronics - All rights reserved

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12/12