TDA7850 4 x 50 W MOSFET quad bridge power amplifier Features
TDA7850
4 x 50 W MOSFET quad bridge power amplifier
Features
■
■
■
■
■
■
■
■
■
■
High output power capability:
– 4 x 50 W/4
max.
– 4 x 30 W/4
@ 14.4 V, 1 kHz, 10 %
– 4 x 80 W/2
max.
– 4 x 55 W/2
@ 14.4V, 1 kHz, 10 %
MOSFET output power stage
Excellent 2
driving capability
Hi-Fi class distortion
Low output noise
ST-BY function
Mute function
Automute at min. supply voltage detection
Low external component count:
– Internally fixed gain (26 dB)
– No external compensation
– No bootstrap capacitors
On board 0.35 A high side driver
■
■
■
■
■
■
Protections:
■
Output short circuit to gnd, to V s
, across the load
Very inductive loads
Overrating chip temperature with soft thermal limiter
Output DC offset detection
Load dump voltage
Fortuitous open gnd
Reversed battery
Flexiwatt25
(Vertical)
Flexiwatt25
(Horizontal)
■
ESD
Description
The TDA7850 is a breakthrough MOSFET technology class AB audio power amplifier in
Flexiwatt 25 package designed for high power car radio. The fully complementary P-Channel/N-
Channel output structure allows a rail to rail output voltage swing which, combined with high output current and minimized saturation losses sets new power references in the car-radio field, with unparalleled distortion performances.
The TDA7850 integrates a DC offset detector.
Table 1.
Device summary
Order code
TDA7850
TDA7850H
Package
Flexiwatt25 (Vertical)
Flexiwatt25 (Horizontal
Packing
Tube
Tube
September 2013 Rev 6 1/18
www.st.com
1
Contents
Contents
TDA7850
Block diagram and application circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Standard test and application circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2/18
TDA7850
List of tables
List of tables
3/18
List of figures
List of figures
TDA7850
Components and top copper layer of the
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Output power vs. supply voltage (R
L
= 4
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Output power vs. supply voltage (R
L
= 2
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
= 4
). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Distortion vs. output power (R
L
Distortion vs. output power (R
L
= 2
). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
= 4
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
= 2
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Power dissipation and efficiency vs. output power (R
L
= 4
, SINE) . . . . . . . . . . . . . . . . . 12
Power dissipation and efficiency vs. output power (R
Power dissipation vs. output power (R
Power dissipation vs. output power (R
L
= 2
, SINE) . . . . . . . . . . . . . . . . . 12
= 4
, audio program simulation) . . . . . . . . . . . . . 13
= 2
, audio program simulation) . . . . . . . . . . . . . 13
4/18
TDA7850
1
Block diagram and application circuit
Block diagram and application circuit
Figure 1.
Block diagram
Vcc1
ST-BY
MUTE
IN1
0.1
μF
IN2
0.1
μF
IN3
0.1
μF
IN4
0.1
μF
AC-GND
0.47
μF
SVR
47
μF
Vcc2
HSD
470
μF
HSD/V
OFF_DET
OUT1+
OUT1-
PW-GND
OUT2+
OUT2-
PW-GND
OUT3+
OUT3-
PW-GND
OUT4+
OUT4-
PW-GND
100nF
TAB S-GND
D94AU158D
1.2 Standard test and application circuit
Figure 2.
Standard test and application circuit
ST-BY
MUTE
IN1
R1
10K
R2
47K
C1
0.1
μF
IN2
C2 0.1
μF
IN3
C3 0.1
μF
IN4
C4 0.1
μF
C8
0.1
μF
C7
2200
μF
Vcc1-2
6
Vcc3-4
20
C9
1
μF
C10
1
μF
4
22
11
9
8
7
5
2
3
12 17
18
19
15
S-GND
14
13
C5
0.47
μF
16
SVR
C6
47
μF
10 25
HSD/OD
R3
*)
1
21
24
23
TAB
*) R3 = 10k
Ω to be placed when pin 25 is used as offset detector.
OUT1
OUT2
OUT3
OUT4
D95AU335C
5/18
Pin description
6/18
Figure 3.
Pin connection (top view)
TAB
P-GND2
OUT2-
ST-BY
OUT2+
V
CC
OUT1-
P-GND1
OUT1+
SVR
IN1
IN2
S-GND
IN4
IN3
AC-GND
OUT3+
P-GND3
OUT3-
V
CC
OUT4+
MUTE
OUT4-
P-GND4
HSD
1
25
IN3
AC-GND
OUT3+
P-GND3
OUT3-
V
CC
OUT4+
MUTE
OUT4-
P-GND4
HSD
TAB
P-GND2
OUT2-
ST-BY
OUT2+
V
CC
OUT1-
P-GND1
OUT1+
SVR
IN1
IN2
S-GND
IN4
1
Vertical
D94AU159A
Horizontal
25
D06AU1655
TDA7850
TDA7850 Electrical specifications
3.1 Absolute maximum ratings
Table 2.
Symbol
V
S
V
S (DC)
V
S (pk)
Absolute maximum ratings
Parameter
Operating supply voltage
DC supply voltage
Peak supply voltage (for t = 50 ms)
I
O
P tot
T j
T stg
Output peak current repetitive (duty cycle 10 % at f = 10 Hz) non repetitive (t = 100
s)
Power dissipation T case
= 70 °C
Junction temperature
Storage temperature
Table 3.
Symbol
Thermal data
Parameter
R th j-case
Thermal resistance junction to case
Value
18
28
50
9
10
80
150
-55 to 150
Unit
V
V
V
A
A
W
°C
°C
Max.
Value
1
Unit
°C/W
7/18
Electrical specifications TDA7850
Table 4.
Symbol
I q1
V
OS dV
OS
Electrical characteristics
(Refer to the test and application diagram, V
S
= 14.4 V; R
L
= 4
; R g
= 600
; f = 1 kHz;
T amb
= 25 °C; unless otherwise specified).
Parameter Test condition Min. Typ.
Max.
Unit
Quiescent current R
L
=
Play mode / Mute mode
100 180 280
±50 mA mV Output offset voltage
During mute ON/OFF output offset voltage
During Standby ON/OFF output offset voltage
Voltage gain
ITU R-ARM weighted see
-10
-10
25 26
+10
+10
27 mV mV dB G v dG v
Channel gain unbalance ±1 dB
P o
P o max.
e
No
C
T
I
SB
I pin5
V
SB out
V
SB in
A
M
V
M out
V
M in
Max. output power
(1)
THD Distortion
SVR Supply voltage rejection f ch
R i
High cut-off frequency
Input impedance
Cross talk
Standby current consumption
ST-BY pin current
Standby out threshold voltage
Standby in threshold voltage
Mute attenuation
Mute out threshold voltage
Mute in threshold voltage
V
S
= 13.2 V; THD = 10 %
V
S
= 13.2 V; THD = 1 %
V
S
= 14.4 V; THD = 10 %
V
S
= 14.4 V; THD = 1 %
V
S
= 14.4 V; THD = 10 %, 2
V
S
= 14.4 V; R
L
= 4
V
S
= 14.4 V; R
L
= 2
P o
= 4W
P o
= 15W; R
L
= 2
"A" Weighted
Bw = 20 Hz to 20 kHz f = 100 Hz; V r
= 1Vrms
P
O
= 0.5 W f = 1 kHz P
O
= 4 W f = 10 kHz P
O
= 4 W
V
ST-BY
= 1.5 V
V
ST-BY
= 0 V
V
ST-BY
= 1.5 V to 3.5 V
(Amp: ON)
(Amp: OFF)
P
Oref
= 4 W
(Amp: Play)
(Amp: Mute)
23
16
28
20
50
50
100
80
60
2.75
80
3.5
25
19
30
23
55
50
85
0.006
0.015
35
50
75
300
100
70
60
90
0.02
0.03
50
70
120
-
-
20
10
±1
1.5
1.5
W
W
W
%
V dB
KHz
K
dB
A
A
V
V dB
V
V
8/18
TDA7850 Electrical specifications
Table 4.
Electrical characteristics (continued)
(Refer to the test and application diagram, V
S
= 14.4 V; R
L
= 4
; R g
= 600
; f = 1 kHz;
T amb
= 25 °C; unless otherwise specified).
Parameter Test condition Min. Typ.
Max.
Unit Symbol
V
I
AM in pin23
V
S
automute threshold
Muting pin current
(Amp: Mute)
Att
80 dB; P
Oref
= 4 W
(Amp: Play)
Att < 0.1 dB; P
O
= 0. 5W
V
MUTE
= 1.5 V
(Sourced Current)
V
MUTE
= 3.5 V
HSD section
V dropout
I prot
Dropout voltage
Current limits
Offset detector (Pin 25)
I
O
= 0.35 A; V
S
= 9 to 16 V
V
M_ON
V
M_OFF
V
OFF
Mute voltage for DC offset detection enabled
V
ST-BY
= 5 V
V
V
25_T
25_F
Detected differential output offset V
ST-BY
= 5 V; V mute
= 8 V
Pin 25 voltage for detection =
TRUE
V
ST-BY
= 5 V; V mute
= 8 V
V
OFF
> ±4 V
Pin 25 Voltage for detection =
FALSE
V
ST-BY
= 5 V; V mute
= 8 V
V
OFF
> ±2 V
1.
Saturated square wave output.
6.5
7
-5
400
8
±2
0
12
7
7.5
12
0.25
±3
8
18
18
0.6
800
6
±4
1.5
V
A
A
V mA
V
V
V
V
V
9/18
Electrical specifications
Figure 4.
Components and top copper layer of the
.
TDA7850
Figure 5.
10/18
TDA7850
0.001
0.1
1
Po (W)
10 100
AC00068
0.001
10 100
Electrical specifications
3.4 Electrical characteristic curves
Figure 6.
Quiescent current vs. supply voltage
160
150
140
130
200
Id (mA)
190
180
Vi = 0
RL =
∞
170
120
110
100
8 10 12
Vs (V)
14 16
Figure 7.
Output power vs. supply voltage
(R
L
= 4
)
18
AC00064
55
50
45
40
35
30
25
80
75
70
65
60
20
15
10
5
8
P o
(W)
R
L
= 4
Ω f = 1 KHz
9 10 11 12 13
V s
(V)
14
Po-max
15
THD= 10%
THD= 1%
16 17 18
AC00064
Figure 8.
Output power vs. supply voltage
(R
L
= 2
)
130
120
110
100
90
80
70
60
50
40
30
20
10
0
8
Po (W)
R
L
= 2
Ω f = 1 KHz
9 10 11 12 13
Vs (V)
14 15
Po-max
THD=10%
16
THD=1%
Figure 9.
Distortion vs. output power
10
THD (%)
V
S
R
L
= 14.4 V
= 4
Ω
1
0.1
0.01
17 18
AC00066
0.001
0.1
(R
L
= 4
)
1 f = 10 KHz f = 1 KHz
P o
(W)
10
Figure 10.
Distortion vs. output power
(R
L
= 2
)
10
THD (%)
V
S
= 14.4 V
RL = 2Ω
1
0.1
0.01
f = 10 KHz f = 1 KHz
Figure 11.
Distortion vs. frequency
(R
L
= 4
)
10
THD (%)
1
V
S
R
L
= 14.4 V
= 4
Ω
P o
= 4 W
0.1
0.01
100
AC00067
1000 f (Hz)
10000 100000
AC00069
11/18
Electrical specifications TDA7850
Figure 12.
Distortion vs. frequency
(R
L
= 2
)
10
THD (%)
1
V
S
R
L
= 14.4 V
= 2
Ω
P o
= 8 W
0.1
0.01
0.001
10 100 1000 f (Hz)
10000
Figure 13.
Crosstalk vs. frequency
-60
-70
-80
-90
100000
AC00070
-100
10
-20
CROSSTALK (dB)
-30
-40
R
L
= 4
Ω
P
R o
= 4 W g
= 600
Ω
-50
100 1000 f (Hz)
10000 100000
AC00071
Figure 14.
Supply voltage rejection vs. frequency
-20
SVR (dB)
-30
Rg = 600Ω
Vripple = 1 Vrms
-40
-50
-60
-70
-80
-90
-100
10 100 1000 f (Hz)
10000
Figure 15.
Output attenuation vs. supply
0
-20
-40
-60
-80
100000
AC00072
-100
5
OUTPUT ATTN (dB)
R
L
= 4
Ω
P o
= 4 W ref
6
voltage
7
Vs (V)
8 9 10
AC00073
Figure 16.
Power dissipation and efficiency vs. output power (R
L
= 4
, SINE)
20
10
0
0
50
40
30
90
P tot
(W)
80
70
60
V
S
R
L
= 14.4 V
= 4 x 4
Ω f = 1 KHz SINE
2 4 6 8
η
η (%)
90
80
70
60
50
P tot
10
10 12 14 16 18 20 22 24 26 28 30
0
P o
(W)
AC00074
40
30
20
Figure 17.
Power dissipation and efficiency vs. output power (R
L
= 2
, SINE)
180
Ptot (W)
160
140
120
100
80
60
V
R
S
L
= 14.4 V
= 4 x 2
Ω f = 1 KHz SINE
40
20
0
0 5 10 15 20 25
P o
(W)
30 35
η
40
P tot
45
η (%)
50 55
0
20
10
90
80
70
60
50
40
30
AC00075
12/18
TDA7850 Electrical specifications
Figure 18.
Power dissipation vs. output power
(R
L
= 4
, audio program simulation)
Figure 19.
Power dissipation vs. output power
(R
L
= 2
, audio program simulation)
30
P tot
(W)
25
V
R
S
= 13.2 V
L
= 4 x 4
Ω
GAUSSIAN NOISE
20
15
10
5
0 1 2
CLIP START
3
P o
(W)
4 5 6
AC00076
60
55
50
45
40
35
30
25
20
15
10
5
0
P tot
(W)
V
R
S
= 13.2 V
L
= 4 x 2
Ω
GAUSSIAN NOISE
2 4
CLIP START
P o
(W)
6 8 10
AC00077
Figure 20.
ITU R-ARM frequency response, weighting filter for transient pop
10
Output attenuation (dB)
-10
0
-20
-30
-40
-50
10 100 1000
Hz
10000 100000
AC00343
13/18
Application hints TDA7850
Referred to the circuit of
4.1 SVR
Besides its contribution to the ripple rejection, the SVR capacitor governs the turn ON/OFF time sequence and, consequently, plays an essential role in the pop optimization during
ON/OFF transients. To conveniently serve both needs, Its minimum recommended value
is 10µF.
The TDA7850's inputs are ground-compatible and can stand very high input signals (±
8Vpk) without any performance degradation.
If the standard value for the input capacitors (0.1µF) is adopted, the low frequency cut-off will amount to 16 Hz.
4.3 Standby muting
Standby and Muting facilities are both CMOS compatible. In absence of true CMOS ports or microprocessors, a direct connection to Vs of these two pins is admissible but a 470k
equivalent resistance should be present between the power supply and the muting and
ST-BY pins.
R-C cells have always to be used in order to smooth down the transitions for preventing any audible transient noises.
About the standby, the time constant to be assigned in order to obtain a virtually pop-free transition has to be slower than 2.5 V/ms.
The TDA7850 integrates a DC offset detector to avoid that an anomalous DC offset on the inputs of the amplifier may be multiplied by the gain and result in a dangerous large offset on the outputs which may lead to speakers damage for overheating. The feature is enabled by the MUTE pin (according to table 3) and works with the amplifier unmuted and with no signal on the inputs.
The DC offset detection is signaled out on the HSD pin. To ensure the correct functionality of the Offset Detector it is necessary to connect a pulldown 10 kW resistor between HSD and ground.
14/18
Under normal usage (4 Ohm speakers) the heatsink's thermal requirements have to be deduced from
, which reports the simulated power dissipation when real music/speech programmes are played out. Noise with gaussian-distributed amplitude was employed for this simulation. Based on that, frequent clipping occurrence (worst-case) will cause P diss
= 26 W. Assuming T amb
= 70 °C and T
CHIP
= 150 °C as boundary conditions, the heatsink's thermal resistance should be approximately 2°C/W. This would avoid any thermal shutdown occurrence even after long-term and full-volume operation.
TDA7850 Package information
In order to meet environmental requirements, ST (also) offers these devices in ECOPACK
® packages. ECOPACK
®
packages are lead-free. The category of second Level Interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard
JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label.
ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.
Figure 21.
Flexiwatt25 (vertical) mechanical data and package dimensions
L4
L5
M
M1
N
O
R
R1
R2
DIM.
A
B
C
D
E
F (1)
G
G1
MIN.
4.45
1.80
0.75
0.37
mm
TYP.
MAX.
MIN.
4.50
1.90
1.40
0.90
0.39
4.65
2.00
1.05
0.42
0.57
0.175
0.070
0.029
0.014
inch
TYP.
0.177
0.074
0.055
0.035
0.015
MAX.
0.183
0.079
0.041
0.016
0.022
0.80
1.00
1.20
0.031
0.040
0.047
23.75
24.00
24.25
0.935
0.945
0.955
H (2) 28.90
29.23
29.30
1.139
1.150
1.153
H1 17.00
0.669
H2
H3
12.80
0.80
0.503
0.031
L (2) 22.07
22.47
22.87
0.869
0.884
0.904
L1 18.57
18.97
19.37
0.731
0.747
0.762
L2 (2) 15.50
15.70
15.90
0.610
0.618
0.626
L3 7.70
7.85
7.95
0.303
0.309
0.313
3.70
3.60
5
3.5
4.00
4.00
2.20
2
1.70
0.5
0.3
0.197
0.138
4.30
0.145
0.157
0.169
4.40
0.142
0.157
0.173
0.086
0.079
0.067
0.02
0.12
0.049
0.019
R3
R4
V
V1
V2
1.25
0.50
5˚ (T p.)
3˚ (Typ.)
20˚ (Typ.)
V3 45˚ (Typ.)
(1): dam-bar protusion not included
(2): molding protusion included
OUTLINE AND
MECHANICAL DATA
Flexiwatt25 (vertical)
V
C
B
V
H
H1
V3
H3
R3
H2
A
R4
V1
N
R
R2
L L1
V1
V2
Pin 1
G
G1
F
R2
FLEX25ME
L5
R1
D
R1
M
R1
E
M1
7034862
15/18
Package information TDA7850
Figure 22.
Flexiwatt25 (horizontal) mechanical data and package dimensions
R1
R2
R3
R4
V
V1
V2
V3
DIM.
C
D
A
B
E
F (1)
mm inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
4.45
4.50
4.65
0.175
0.177
0.183
1.80
1.90
2.00
0.070
0.074
0.079
1.40
2.00
0.055
0.079
0.37
0.39
0.42
0.014
0.015
0.016
0.57
0.022
G 0.75
1.00
1.25
0.029
0.040
0.049
G1 23.70
24.00
24.30
0.933
0.945
0.957
H (2) 28.90
29.23
29.30
1.139
1.150
1.153
H1
H2
17.00
12.80
0.669
0.503
H3 0.80
0.031
L (2) 21.64
22.04
22.44
0.852
0.868
0.883
N
P
R
M
M1
M2
L1 10.15
10.5
10.85
0.40
0.413
0.427
L2 (2) 15.50
15.70
15.90
0.610
0.618
0.626
L3 7.70
7.85
7.95
0.303
0.309
0.313
L4
L5
L6
5.15
1.80
5
5.45
1.95
5.85
2.10
0.203
0.070
0.197
0.214
0.077
0.23
0.083
2.75
3.00
4.73
5.61
2.20
3.50
0.108
0.118
0.186
0.220
0.086
3.20
3.50
3.80
0.126
0.138
0.15
1.70
0.067
0.138
0.50
0.30
1.25
0.50
5 (Typ.)
3 (Typ.)
20 (Typ.)
45 (Typ.)
0.02
0.12
0.049
0.02
(1): dam-bar protusion not included; (2): molding protusion included
OUTLINE AND
MECHANICAL DATA
Flexiwatt25
(Horizontal)
7399733 C
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TDA7850 Revision history
Table 5.
Date
Document revision history
22-Nov-2006
27-Feb-2007
09-Oct-2007
12-Sep-2008
07-Nov-2008
17-Sep-2013
Revision
1
2
3
4
5
6
Changes
Initial release.
Added
Chapter 3.4: Electrical characteristic curves
.
Updated the values for the dV
OS
and I q1
.
Added
Updated
Figure 2: Standard test and application circuit
.
Updated
Section 4.4: DC offset detector
Section 4.3: Standby and muting
Updated the values of V
OS
.
Modified max. values of the THD distortion in
Table 4: Electrical characteristics on page 8
Updated Disclaimer.
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TDA7850
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