STPSC16H065C 650 V power Schottky silicon carbide diode Description -

STPSC16H065C 650 V power Schottky silicon carbide diode Description -
STPSC16H065C
650 V power Schottky silicon carbide diode
Datasheet - production data
Description
A1
K
A2
A2
A1
K
TO-220AB
STPSC16H065CT
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide band-gap material
allows the design of a Schottky diode structure
with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and
ringing patterns are negligible. The minimized
capacitive charge at turn-off behavior is
independent of temperature.
Especially suited for use in interleaved or bridgeless topologies, this dual-diode rectifier will boost
the performance in hard switching conditions. Its
high forward surge capability ensures a good
robustness during transient phases.
Table 1. Device summary
Symbol
Value
• No or negligible reverse recovery
IF(AV)
2x8A
• Switching behavior independent of
temperature
VRRM
650 V
Tj (max)
175 °C
Features
• High forward surge capability
March 2014
This is information on a product in full production.
DocID024810 Rev 3
1/8
www.st.com
Characteristics
1
STPSC16H065C
Characteristics
Table 2. Absolute ratings (limiting values per diode at 25 °C unless otherwise specified)
Symbol
Parameter
VRRM
Repetitive peak reverse voltage
IF(RMS)
Forward rms current
(1)
IF(AV)
Average forward current
IFSM
Surge non repetitive forward current
IFRM
Repetitive peak forward current
Tstg
Storage temperature range
Operating junction temperature
Tj
Value
Unit
650
V
22
A
Tc = 140 °C , DC
Per diode
8
A
Tc = 135 °C(2), DC
Per device
16
A
tp = 10 ms sinusoidal, Tc = 25 °C
tp = 10 ms sinusoidal, Tc = 125 °C
tp = 10 µs square, Tc = 25 °C
75
69
420
A
Tc = 140 °C(1), Tj = 175 °C, δ = 0.1
34
A
-65 to +175
°C
-40 to +175
°C
(3)
1. Value based on Rth(j-c) max (per diode)
2. Value based on Rth(j-c) max (per device)
dPtot
--------------dTj
3.
1
- condition to avoid thermal runaway for a diode on its own heatsink
< ------------------------Rth (j – a )
Table 3. Thermal resistance parameters
Symbol
Parameter
Rth(j-c)
Junction to case
Rth(c)
Coupling
Typ.
Max.
Per diode
1.3
1.6
Per device
0.8
0.95
-
0.3
Unit
°C/W
When the diodes 1 and 2 are used simultaneously:
ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode2) x Rth(c)
Table 4. Static electrical characteristics (per diode)
Symbol
Parameter
IR (1)
Reverse leakage current
VF (2)
Forward voltage drop
Tests conditions
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VR = VRRM
IF = 8A
Min.
Typ.
Max.
-
7
80
-
65
335
-
1.56
1.75
-
1.98
2.5
µA
V
1. tp = 10 ms, δ < 2%
2. tp = 500 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 1.35 x IF(AV) + 0.144 x IF2(RMS)
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Unit
STPSC16H065C
Characteristics
Table 5. Dynamic electrical characteristics (perdiode)
Symbol
Q cj(1)
Parameter
Test conditions
Total capacitive charge
Total capacitance
Cj
Typ.
Unit
VR = 400 V
23.5
nC
VR = 0 V, Tc = 25 °C, F = 1 MHz
414
VR = 400 V, Tc = 25 °C, F = 1 MHz
38
1. Most accurate value for the capacitive charge:
pF
VOUT
Qcj =
∫0 cj(vR).dvR
Figure 1. Forward voltage drop versus forward Figure 2. Forward voltage drop versus forward
current (typical values, low level, per diode)
current (typical values, high level, per diode)
16
IFM(A)
80
Pulse test : tp=500µs
14
12
Pulse test : tp=500µs
70
60
Ta=100 °C
10
IFM(A)
50
Ta=150 °C
Ta=25 °C
8
40
Ta=175 °C
6
30
4
20
2
Ta=25 °C
Ta=100 °C
Ta=150 °C
10
VFM(V)
VFM(V)
Ta=175 °C
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Figure 3. Reverse leakage current versus
reverse voltage applied (typical values, per
diode)
1.E+03
0
3.5
IR(µA)
1
2
3
4
5
6
I M (A)
T
d = 0.1
70
Tj=175 °C
d=tp/T
60
1.E+01
8
Figure 4. Peak forward current versus case
temperature (per diode)
80
1.E+02
7
tp
50
Tj=150 °C
d = 0.3
40
1.E+00
d = 0.5
30
20
1.E-01
d=1
Tj=25 °C
VR(V)
1.E-02
0
50
100 150 200 250 300 350 400 450 500 550 600 650
d = 0.7
10
TC(°C)
0
0
DocID024810 Rev 3
25
50
75
100
125
150
175
3/8
8
Characteristics
STPSC16H065C
Figure 5. Junction capacitance versus reverse
voltage applied (typical values, per diode)
500
Cj (pF)
Figure 6. Relative variation of thermal
impedance junction to case versus pulse
duration
1.0
F=1 MHz
VOSC=30 mVRMS
Tj=25 °C
450
400
0.9
0.8
350
0.7
300
0.6
250
0.5
200
0.4
150
0.3
100
0.2
50
0.1
VR(V)
0
0.1
1.0
10.0
100.0
1000.0
Figure 7. Non-repetitive peak surge forward
current versus pulse duration (sinusoidal
waveform, per diode)
1.E+03
Zth(j-c)/Rth(j-c)
IFSM (A)
Single pulse
0.0
1.E-05
tp(s)
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
Figure 8. Total capacitive charges versus
reverse voltage applied (typical values, per
diode)
28
Qcj (nC)
24
Ta=25 °C
20
16
Ta=125 °C
1.E+02
12
8
4
VR (V)
tp(s)
1.E+01
1.E-05
4/8
0
1.E-04
1.E-03
1.E-02
0
DocID024810 Rev 3
50
100
150
200
250
300
350
400
STPSC16H065C
2
Package information
Package information
•
Epoxy meets UL94, V0
•
Cooling method: conduction (C)
•
Recommended torque value: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at:www.st.com.
ECOPACK® is an ST trademark.
Figure 9. TO-220AB dimension definitions
A
E
∅P
Resin gate
0.5 mm max.
protrusion(1)
F
Q
H1
D D1
L30
L20
b1
J1
L1
L
b
e
e1
Resin gate
0.5 mm max.
protrusion(1)
c
(1) Resin gate position accepted in each of the two
position shown as well as the symmetrical opposites
DocID024810 Rev 3
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8
Package information
STPSC16H065C
Table 6. TO-220AB dimensions values
Dimensions
Ref.
Millimeters
Min.
Max.
Min.
Max.
A
4.40
4.60
0.17
0.18
b
0.61
0.88
0.024
0.035
b1
1.14
1.70
0.045
0.067
c
0.48
0.70
0.019
0.027
D
15.25
15.75
0.60
0.62
D1
6/8
Inches
1.27 typ.
0.05 typ.
E
10
10.40
0.39
0.41
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.19
0.20
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.24
0.26
J1
2.40
2.72
0.094
0.107
L
13
14
0.51
0.55
L1
3.50
3.93
0.137
0.154
L20
16.40 typ.
0.64 typ.
L30
28.90 typ.
1.13 typ.
∅P
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
DocID024810 Rev 3
STPSC16H065C
3
Ordering information
Ordering information
Table 7. Ordering information
4
Order code
Marking
Package
Weight
Base qty
Delivery mode
STPSC16H065CT
STPSC16H065CT
TO-220AB
1.86 g
50
Tube
Revision history
Table 8. Document revision history
Date
Revision
Changes
24-Jun-2013
1
First issue.
07-Nov-2013
2
Updated Figure 1 and Figure 2.
20-Mar-2014
3
Updated Table 3.
DocID024810 Rev 3
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8
STPSC16H065C
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