STPSC2006CW 600 V power Schottky silicon carbide diode Features

STPSC2006CW 600 V power Schottky silicon carbide diode Features
STPSC2006CW
600 V power Schottky silicon carbide diode
Features
■
No or negligible reverse recovery
A1
■
Switching behavior independent of
temperature
A2
■
Particularly suitable in PFC boost diode
function
K
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide band gap material
allows the design of a Schottky diode structure
with a 600 V rating. Due to the Schottky
construction no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
A2
K
A1
TO-247
STPSC2006CW
Table 1.
ST SiC diodes will boost the performance of PFC
operations in hard switching conditions.
March 2011
Doc ID 018506 Rev 1
Device summary
Symbol
Value
IF(AV)
2 x 10 A
VRRM
600 V
Tj (max)
175 °C
QC (typ)
12 nC
1/7
www.st.com
7
Characteristics
1
STPSC2006CW
Characteristics
Table 2.
Absolute ratings (limiting values at 25 °C unless otherwise specified, per
diode)
Symbol
Parameter
VRRM
Repetitive peak reverse voltage
IF(RMS)
Forward rms current
Value
Unit
600
V
18
A
Tc = 115 °C, δ = 0.5 Per diode
10
A
Tc = 100 °C, δ = 0.5 Per device
20
A
IF(AV)
Average forward current
IFSM
Surge non repetitive forward
current
tp = 10 ms sinusoidal, Tc = 25 °C
tp = 10 ms sinusoidal, Tc = 125 °C
tp = 10 µs square, Tc = 25 °C
40
32
160
A
IFRM
Repetitive peak forward current
δ = 0.1, Tc = 110 °C, Tj = 150 °C
40
A
Tstg
Storage temperature range
-55 to +175
°C
Maximum operating junction temperature range
-40 to +175
°C
Value
Unit
Tj
Table 3.
Thermal resistance
Symbol
Parameter
Per diode
Rth(j-c)
2
Total
Rth(c)
Table 4.
Symbol
°C/W
Junction to case
1.2
Coupling
0.4
°C/W
°C/W
Static electrical characteristics per diode
Parameter
IR (1)
Reverse leakage
current
VF (2)
Forward voltage drop
Tests conditions
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VR = VRRM
IF = 10 A
Min.
Typ.
Max.
-
30
150
-
210
1500
-
1.4
1.7
-
1.6
2.1
Unit
µA
V
1. tp = 10 ms, δ < 2%
2. tp = 500 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 1.2 x IF(AV) + 0.09 x IF2(RMS)
Table 5.
Symbol
2/7
Other parameters per diode
Parameter
Test conditions
Typ.
Unit
Qc
Total capacitive charge
Vr = 400 V, IF = 10 A dIF/dt = -200 A/µs
Tj = 150 °C
12
nC
C
Total capacitance
Vr = 0 V, Tc = 25 °C, F = 1 Mhz
650
pF
Doc ID 018506 Rev 1
STPSC2006CW
Figure 1.
20
Characteristics
Forward voltage drop versus
forward current
(typical values, per diode)
Figure 2.
IFM(A)
1.E+04
Reverse leakage current versus
reverse voltage applied
(maximum values, per diode)
IR(µA)
18
Tj = 175 °C
16
1.E+03
Tj = 25 °C
14
Tj = 150 °C
Tj = 150 °C
1.E+02
12
10
Tj = 175 °C
1.E+01
8
6
1.E+00
4
Tj = 25 °C
2
VFM(V)
0
0.0
0.5
Figure 3.
70
1.0
1.5
2.0
2.5
Peak forward current versus case
temperature (per diode)
IM(A)
60 δ = 0.1
δ = tp / T
50
Figure 4.
100 150 200 250 300 350 400 450 500 550 600
Junction capacitance versus
reverse voltage applied
(typical values, per diode)
C(pF)
F = 1 MHz
Vosc = 30 mVRMS
T = 25 °C
450
400
tp
j
50
350
300
40
30
δ = 0.3
250
δ = 0.5
200
150
20
δ=1
10
100
δ = 0.7
50
TC(°C)
0
0
25
Figure 5.
1.0
0
500
T
VR(V)
1.E-01
3.0
50
75
VR(V)
0
100
125
150
175
Relative variation of thermal
impedance junction to case
versus pulse duration
1
10
Figure 6.
Zth(j-c)/Rth(j-c)
1.E+03
100
1000
Non-repetitive peak surge forward
current versus pulse duration
(sinusoidal waveform, per diode)
IFSM(A)
0.9
0.8
0.7
1.E+02
TC = 25 °C
0.6
TC = 125 °C
0.5
0.4
1.E+01
0.3
0.2
0.1
Single pulse
0.0
1.E-05
tp(s)
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+00
1.E-05
Doc ID 018506 Rev 1
tp(s)
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
3/7
Characteristics
Figure 7.
STPSC2006CW
Total capacitive charge versus dIF/dt (typical values, per diode)
18
QC(nC)
IF = 10 A
VR = 400 V
Tj = 150 °C
16
14
12
10
8
6
4
2
dIF/dt(A/µs)
0
0
4/7
50
100
150
200
250
300
350
Doc ID 018506 Rev 1
400
450
500
STPSC2006CW
2
Package information
Package information
●
Epoxy meets UL94, V0
●
Cooling method: convection (C)
●
Recommended torque value: 0.55 to 1.0 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 6.
TO-247 dimensions
Dimensions
Ref.
V
V
Dia
A
H
L5
L2
L4
F2
F1
L3
L1
F3
V2
D
F4
F(x3)
M
Inches
Min.
Max.
Min.
Max.
A
4.85
5.16
0.191
0.203
D
2.20
2.60
0.086
0.102
E
0.40
0.80
0.015
0.031
F
1.00
1.40
0.039
0.055
F1
3.00 typ.
0.118 typ.
F2
2.00 typ.
0.079 typ.
F3
1.90
2.40
0.075
0.094
F4
3.00
3.40
0.118
0.134
G
L
Millimeters
10.90 typ.
0.429 typ.
H
15.45
16.03
0.608
0.631
L
19.85
21.09
0.781
0.830
L1
3.70
4.30
0.146
0.169
L2
18.30
19.13
0.720
0.753
L3
14.20
20.30
0.559
0.799
L4
34.05
41.38
1.341
1.629
L5
5.35
6.30
0.211
0.248
M
2.00
3.00
0.079
0.118
E
G
V
5° typ.
5° typ.
V2
60° typ.
60° typ.
Dia.
Doc ID 018506 Rev 1
3.55
3.65
0.140
0.144
5/7
Ordering information
3
Ordering information
Table 7.
4
Ordering information
Order code
Marking
Package
Weight
Base qty
Delivery mode
STPSC2006CW
STPSC2006CW
TO-247
4.36 g
30
Tube
Revision history
Table 8.
6/7
STPSC2006CW
Document revision history
Date
Revision
01-Mar-2011
1
Changes
First issue.
Doc ID 018506 Rev 1
STPSC2006CW
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