Heterojunction Bipolar Transistor Technology (InGaP HBT) MMG3006NT1 Broadband High Linearity Amplifier

Heterojunction Bipolar Transistor Technology (InGaP HBT) MMG3006NT1 Broadband High Linearity Amplifier

Freescale Semiconductor

Technical Data

Heterojunction Bipolar Transistor

Technology (InGaP HBT)

Broadband High Linearity Amplifier

The MMG3006NT1 is a general purpose amplifier that is internally input prematched and designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 400 to 2400 MHz such as cellular, PCS, WLL, PHS,

VHF, UHF, UMTS and general small--signal RF.

Features

 Frequency: 400--2400 MHz

 P1dB: 33 dBm @ 900 MHz

 Small--Signal Gain: 17.5 dB @ 900 MHz

 Third Order Output Intercept Point: 49 dBm @ 900 MHz

 Single 5 V Supply

 Internally Input Prematched to 50 Ohms

 In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 13--inch Reel.

Document Number: MMG3006NT1

Rev. 5, 9/2014

MMG3006NT1

400--2400 MHz, 17.5 dB

33 dBm

InGaP HBT GPA

QFN 4 4

Table 1. Typical Performance

(1)

Characteristic

Small--Signal Gain

(S21)

Input Return Loss

(S11)

Output Return Loss

(S22)

Symbol

G p

IRL

ORL

900

MHz

17.5

--8

--13

1960

MHz

14

--9

--14

2140

MHz

14

--12

--18

Unit

dB dB dB

Power Output @1dB

Compression

Third Order Output

Intercept Point

P1db

OIP3

33

49

33

49

33

49 dBm dBm

1. V

DC

= 5 Vdc, T

A

= 25C, 50 ohm system, application circuit tuned for specified frequency.

Table 2. Maximum Ratings

Rating

Supply Voltage

Supply Current

RF Input Power

Storage Temperature Range

Junction Temperature

Symbol

V

DC

I

DC

P in

T stg

T

J

Value

6

1400

28

--65 to +150

175

Unit

V mA dBm

C

C

Table 3. Thermal Characteristics

Characteristic

Thermal Resistance, Junction to Case

Case Temperature 89C, 5 Vdc, 850 mA, no RF applied

Symbol

R

JC

Value

(2)

7.8

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

Unit

C/W

 Freescale Semiconductor, Inc., 2008, 2010--2011, 2014. All rights reserved.

RF Device Data

Freescale Semiconductor, Inc.

MMG3006NT1

1

Table 4. Electrical Characteristics

(V

DC

= 5 Vdc, 900 MHz, T

A

= 25C, 50 ohm system, in Freescale Application Circuit)

Characteristic Symbol Min Typ Max

Small--Signal Gain (S21)

Input Return Loss (S11)

Output Return Loss (S22)

Power Output @ 1dB Compression

Third Order Output Intercept Point

Noise Figure

Supply Current

Supply Voltage

G p

IRL

ORL

P1dB

OIP3

NF

I

DC

V

DC

760

16.5

49

6.6

850

5

17.5

--8

--13

33

960

Table 5. Functional Pin Description

Name

V

BA

RF in

RF out

V

CC

/

V

CC

GND

Pin

Number

1

2, 3, 4

9, 10,

11, 12

16

Backside

Center

Metal

Description

Bias voltage supply.

RF input for the power amplifier. This pin is DC--coupled and requires a DC--blocking series capacitor.

RF output for the power amplifier. This pin is DC--coupled and requires a DC--blocking series capacitor.

Collector voltage supply.

The center metal base of the QFN package provides both

DC and RF ground as well as heat sink contact for the power amplifier.

V

BA

RF in

RF in

RF in

3

4

1

2

V

CC

N.C. N.C. N.C.

16 15 14 13

5 6 7 8

N.C.

N.C. N.C. N.C.

12

11

10

9

(Top View)

RF out

/V

CC

RF out

/V

CC

RF out

/V

CC

RF out

/V

CC

Figure 1. Pin Connections

Unit

dB dB dB dBm dBm dB mA

V

Table 6. ESD Protection Characteristics

Test Conditions/Test Methodology

Human Body Model (per JESD 22--A114)

Machine Model (per EIA/JESD 22--A115)

Charge Device Model (per JESD 22--C101)

Table 7. Moisture Sensitivity Level

Test Methodology

Per JESD 22--A113, IPC/JEDEC J--STD--020

Rating

1

Class

1C

A

IV

Package Peak Temperature

260

Unit

C

MMG3006NT1

2

RF Device Data

Freescale Semiconductor, Inc.

50 OHM TYPICAL CHARACTERISTICS

10

6

45

40

55

50

720 mA

I

DC

= 850 mA

570 mA

35

30

25

V

DC f

1 f

2

= 5 Vdc

= 1829 MHz

= 1830 MHz

20

15 20 25

P out

, OUTPUT POWER (dBm)

30 35

NOTE: Supply current is varied under external resistor control. Peak power is not reduced at any listed current. Similar results can be obtained for other frequency bands.

Figure 2. Third Order Output Intercept Point versus Output Power and Supply Current

S) 10

5

10

4

10

3

120 125 130 135 140

T

J

, JUNCTION TEMPERATURE (C)

145

NOTE: The MTTF is calculated with V

DC

= 5 Vdc, I

DC

= 850 mA

Figure 3. MTTF versus Junction Temperature

150

RF Device Data

Freescale Semiconductor, Inc.

MMG3006NT1

3

R1

50 OHM APPLICATION CIRCUIT: 900 MHz

V

SUPPLY

R3

R2

C3

RF

INPUT

Z1

C1

Z2

C8

Z3

C9

C4

Z4 Z5

1

2

3

4

16 15 14 13

Current Mirror

DUT

12

11

10

9

5 6 7 8

Z6 Z7

L1

Z8

C5

Z9

C6

C2

C10

C7

Z10

C11

Z11

RF

OUTPUT

Z1 0.140 x 0.028 Microstrip

Z2, Z9, Z10 0.044 x 0.028 Microstrip

Z3

Z4

Z5

0.169 x 0.028 Microstrip

0.177 x 0.028 Microstrip

0.026 x 0.053 Microstrip

Z6

Z7

Z8

Z11

PCB

0.026 x 0.089 Microstrip

0.167 x 0.028 Microstrip

0.178 x 0.028 Microstrip

0.096 x 0.028 Microstrip

Isola FR408, 0.014,  r

= 3.7

Figure 4. 50 Ohm Test Circuit Schematic

Table 8. 50 Ohm Test Circuit Component Designations and Values

Part Description

C1, C2

C3, C6

C4, C7

C5

C8

C9, C11

C10

L1

R1

R2, R3

15 pF Chip Capacitors

0.01 F Chip Capacitors

0.1 F Chip Capacitors

2.2 F Chip Capacitor

6.8 pF Chip Capacitor

3.9 pF Chip Capacitors

5.6 pF Chip Capacitor

15 nH Chip Inductor

100 , 1/4 W Chip Resistor

0 , 1/10 W Chip Resistors

Part Number

ECUV1H150JCV

C0603C103J5RAC

C0603C104J5RAC

T491A225K016AT

06035J6R8BS

06035J3R9BS

06035J5R6BS

1008CS--150XJB

ERJ8GEYJ101V

CRCW06030000FKEA

Manufacturer

Panasonic

Kemet

Kemet

Kemet

AVX

AVX

AVX

Coilcraft

Panasonic

Vishay

MMG3006NT1

4

RF Device Data

Freescale Semiconductor, Inc.

50 OHM APPLICATION CIRCUIT: 900 MHz

V

BA

V

SUPPLY

C5

RF in

C1

C8 C9

C3

C4

R1

R2

R3

L1

C6

C7

C2

RF out

C10 C11

MMG3006N Rev 4

Figure 5. 50 Ohm Test Circuit Component Layout

RF Device Data

Freescale Semiconductor, Inc.

MMG3006NT1

5

16

14

20

18

85C

T

C

= --40C

50 OHM TYPICAL CHARACTERISTICS: 900 MHz

--5

25C

12

V

DC

= 5 Vdc

10

840 870 900 f, FREQUENCY (MHz)

930

Figure 6. Small--Signal Gain (S21) versus

Frequency

960

--6

--7

T

C

= --40C

85C

25C

--8

--9

V

DC

= 5 Vdc

--10

840 870 900 f, FREQUENCY (MHz)

930

Figure 7. Input Return Loss (S11) versus

Frequency

960

--5

40

--10

T

C

= --40C

35

85C

--15

85C

25C

--20

V

DC

= 5 Vdc

--25

840 870 900 f, FREQUENCY (MHz)

930

Figure 8. Output Return Loss (S22) versus

Frequency

960

52

50

T

C

= --40C

25C

48

85C

46

44

42

840

V

DC

= 5 Vdc

1 MHz Tone Spacing

870 900 f, FREQUENCY (MHz)

930

Figure 10. Third Order Output Intercept

Point versus Frequency

960

MMG3006NT1

6

30 25C

T

C

= --40C

25

20

840

V

DC

= 5 Vdc

870 900 f, FREQUENCY (MHz)

930

Figure 9. P1dB versus Frequency

960

10

8

T

C

= 85C

6

4

--40C

25C

2

V

DC

= 5 Vdc

0

840 870 900 930 f, FREQUENCY (MHz)

Figure 11. Noise Figure versus Frequency

960

RF Device Data

Freescale Semiconductor, Inc.

50 OHM TYPICAL CHARACTERISTICS: 900 MHz

--25

--30

--35

V

DC

= 5 Vdc, f = 900 MHz

Single--Carrier IS--95, 9 Channel Forward

750 kHz Measurement Offset

30 kHz Measurement Bandwidth

--40

T

C

= --40C

25C

--45

--50

85C

--55

24 26 28 30

P out

, OUTPUT POWER (dBm)

Figure 12. IS--95 Adjacent Channel Power Ratio versus Output Power

32

--30

--35

--40

V

DC

= 5 Vdc, f = 900 MHz

Single--Carrier IS--95, 9 Channel Forward

885 kHz Measurement Offset

30 kHz Measurement Bandwidth

--45

T

C

= --40C

--50

25C

85C

--55

--60

24 26 28 30 32

P out

, OUTPUT POWER (dBm)

Figure 13. IS--95 Adjacent Channel Power Ratio versus Output Power

RF Device Data

Freescale Semiconductor, Inc.

MMG3006NT1

7

50 OHM APPLICATION CIRCUIT: 1960 MHz

V

SUPPLY

R1 R2

R3

RF

INPUT

Z1

C1

C3 C4

16 15 14 13

Z2 Z3 Z4 Z5

1

2

3

4

Current Mirror

DUT

12

11

10

9

Z6 Z7 Z8

C8 C9 C10 C11

5 6 7 8

Z1, Z11 0.140 x 0.028 Microstrip

Z2

Z3

0.268 x 0.028 Microstrip

0.084 x 0.028 Microstrip

Z4

Z5

Z6

0.038 x 0.028 Microstrip

0.026 x 0.053 Microstrip

0.026 x 0.089 Microstrip

Z7

Z8

Z9

Z10

PCB

0.041 x 0.028 Microstrip

0.093 x 0.028 Microstrip

0.033 x 0.028 Microstrip

0.222 x 0.028 Microstrip

Isola FR408, 0.014,  r

= 3.7

Figure 14. 50 Ohm Test Circuit Schematic

Z9

L1

Z10

C5 C6 C7

Z11

RF

OUTPUT

C2

C3, C6

C4, C7

C5

C8, C9

C10

C11

L1

R1

R2, R3

Table 9. 50 Ohm Test Circuit Component Designations and Values

C1, C2

Part Description

15 pF Chip Capacitors

0.01 F Chip Capacitors

0.1 F Chip Capacitors

2.2 F Chip Capacitor

3.0 pF Chip Capacitors

2.0 pF Chip Capacitor

2.7 pF Chip Capacitor

15 nH Chip Inductor

100 , 1/4 W Chip Resistor

0 , 1/10 W Chip Resistors

Part Number

ECUV1H150JCV

C0603C103J5RAC

C0603C104J5RAC

T491A225K016AT

06035J3R0BS

06035J2R0BS

06035J2R7BS

1008CS--150XJB

ERJ8GEYJ101V

CRCW06030000FKEA

Manufacturer

Panasonic

Kemet

Kemet

Kemet

AVX

AVX

AVX

Coilcraft

Panasonic

Vishay

MMG3006NT1

8

RF Device Data

Freescale Semiconductor, Inc.

RF in

C1

50 OHM APPLICATION CIRCUIT: 1960 MHz

V

BA

V

SUPPLY

C5

C3

C4

R1

R2

R3

L1

C6

C7

C2

RF out

C8 C9 C10 C11

MMG3006N Rev 4

Figure 15. 50 Ohm Test Circuit Component Layout

RF Device Data

Freescale Semiconductor, Inc.

MMG3006NT1

9

14

12

18

16

T

C

= --40C

85C

50 OHM TYPICAL CHARACTERISTICS: 1960 MHz

--6

25C

10

V

DC

= 5 Vdc

8

1900 1930 1960 f, FREQUENCY (MHz)

1990

Figure 16. Small--Signal Gain (S21) versus

Frequency

2020

--7

--8

T

C

= --40C

25C

85C

--9

--10

V

DC

= 5 Vdc

--11

1900 1930 1960 f, FREQUENCY (MHz)

1990

Figure 17. Input Return Loss (S11) versus

Frequency

2020

--5

40

35

25C

T

C

= --40C

30

85C

--10

--15

85C

25C

--20

V

DC

= 5 Vdc

--25

1900 1930 1960 f, FREQUENCY (MHz)

1990

Figure 18. Output Return Loss (S22) versus

Frequency

2020

52

T

C

= --40C

50

T

C

= --40C

25C

48

85C

46

44

42

1900

V

DC

= 5 Vdc

1 MHz Tone Spacing

1930 1960 f, FREQUENCY (MHz)

1990

Figure 20. Third Order Output Intercept

Point versus Frequency

2020

25

20

1900

V

DC

= 5 Vdc

1930 1960 f, FREQUENCY (MHz)

1990

Figure 19. P1dB versus Frequency

2020

10

8

T

C

= 85C

6

4

--40C

25C

2

V

DC

= 5 Vdc

0

1900 1930 1960 1990 f, FREQUENCY (MHz)

Figure 21. Noise Figure versus Frequency

2020

MMG3006NT1

10

RF Device Data

Freescale Semiconductor, Inc.

50 OHM TYPICAL CHARACTERISTICS: 1960 MHz

--30

--35

V

DC

= 5 Vdc, f = 1960 MHz

Single--Carrier IS--95, 9 Channel Forward

750 kHz Measurement Offset

30 kHz Measurement Bandwidth

--40

--45

T

C

= --40C 25C

--50

85C

--55

22 24 26 28 30

P out

, OUTPUT POWER (dBm)

Figure 22. IS--95 Adjacent Channel Power Ratio versus Output Power

32

--30

--35

--40

--45

--50

V

DC

= 5 Vdc, f = 1960 MHz

Single--Carrier IS--95, 9 Channel Forward

885 kHz Measurement Offset

30 kHz Measurement Bandwidth

--55

T

C

= --40C

85C

--60

25C

--65

--70

20 22 24 26 28 30 32

P out

, OUTPUT POWER (dBm)

Figure 23. IS--95 Adjacent Channel Power Ratio versus Output Power

--30

--35

V

DC

= 5 Vdc, f = 1960 MHz

Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth

Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF)

--40

--45

T

C

= --40C

--50

25C

--55

85C

--60

--65

20 22 24 26

P out

, OUTPUT POWER (dBm)

Figure 24. Single--Carrier W--CDMA Adjacent

Channel Power Ratio versus Output Power

28

RF Device Data

Freescale Semiconductor, Inc.

MMG3006NT1

11

50 OHM APPLICATION CIRCUIT: 2140 MHz

V

SUPPLY

R1 R2

R3

RF

INPUT

Z1

C8

Z2

Z1

Z2

Z3

Z4

Z5

Z6

C1

C3 C4

16 15 14 13

Z3 Z4 Z5

1

2

3

4

Current Mirror

DUT

12

11

10

9

Z6 Z7 Z8

C9 C10

5 6 7 8

0.096 x 0.028 Microstrip

0.044 x 0.028 Microstrip

0.352 x 0.028 Microstrip

0.038 x 0.028 Microstrip

0.026 x 0.053 Microstrip

0.026 x 0.089 Microstrip

Z7

Z8

Z9

Z10

PCB

0.074 x 0.028 Microstrip

0.093 x 0.028 Microstrip

0.222 x 0.028 Microstrip

0.140 x 0.028 Microstrip

Isola FR408, 0.014,  r

= 3.7

Figure 25. 50 Ohm Test Circuit Schematic

L1

Z9

C5 C6 C7

Z10

RF

OUTPUT

C2

C3, C6

C4, C7

C5

C8

C9

C10

L1

R1

R2, R3

Table 10. 50 Ohm Test Circuit Component Designations and Values

C1, C2

Part Description

15 pF Chip Capacitors

0.01 F Chip Capacitors

0.1 F Chip Capacitors

2.2 F Chip Capacitor

0.5 pF Chip Capacitor

3.6 pF Chip Capacitor

3.9 pF Chip Capacitor

15 nH Chip Inductor

100 , 1/4 W Chip Resistor

0 , 1/10 W Chip Resistors

Part Number

ECUV1H150JCV

C0603C103J5RAC

C0603C104J5RAC

T491A225K016AT

06035J0R5BS

06035J3R6BS

06035J3R9BS

1008CS--150XJB

ERJ8GEYJ101V

CRCW06030000FKEA

Manufacturer

Panasonic

Kemet

Kemet

Kemet

AVX

AVX

AVX

Coilcraft

Panasonic

Vishay

MMG3006NT1

12

RF Device Data

Freescale Semiconductor, Inc.

C8

RF in

C1

50 OHM APPLICATION CIRCUIT: 2140 MHz

V

BA

V

SUPPLY

C5

C3

C4

R1

R2

R3

L1

C6

C7

C2

RF out

C9 C10

MMG3006N Rev 4

Figure 26. 50 Ohm Test Circuit Component Layout

RF Device Data

Freescale Semiconductor, Inc.

MMG3006NT1

13

18

16

T

C

= --40C

14

85C

12

25C

50 OHM TYPICAL CHARACTERISTICS: 2140 MHz

--15

10

V

DC

= 5 Vdc

8

2080 2110 2140 f, FREQUENCY (MHz)

2170

Figure 27. Small--Signal Gain (S21) versus

Frequency

2200

T

C

= --40C

--20

25C

--25

85C

--30

V

DC

= 5 Vdc

--35

2080 2110 2140 f, FREQUENCY (MHz)

2170

Figure 28. Input Return Loss (S11) versus

Frequency

2200

--5

40

T

C

= --40C

--10

T

C

= --40C

--15

85C

25C

--20

V

DC

= 5 Vdc

--25

2080 2110 2140 f, FREQUENCY (MHz)

2170

Figure 29. Output Return Loss (S22) versus

Frequency

2200

52

50

T

C

= --40C

25C

48

85C

46

44

42

2080

V

DC

= 5 Vdc

1 MHz Tone Spacing

2110 2140 f, FREQUENCY (MHz)

2170

Figure 31. Third Order Output Intercept

Point versus Frequency

2200

35

30

85C

25C

25

20

2080

V

DC

= 5 Vdc

2200 2110 2140 f, FREQUENCY (MHz)

2170

Figure 30. P1dB versus Frequency

10

8

T

C

= 85C

6

25C

4

--40C

2

V

DC

= 5 Vdc

0

2080 2110 2140 2170 f, FREQUENCY (MHz)

Figure 32. Noise Figure versus Frequency

2200

MMG3006NT1

14

RF Device Data

Freescale Semiconductor, Inc.

50 OHM TYPICAL CHARACTERISTICS: 2140 MHz

--30

--35

V

DC

= 5 Vdc, f = 2140 MHz

Single--Carrier IS--95, 9 Channel Forward

750 kHz Measurement Offset

30 kHz Measurement Bandwidth

--40

25C

--45

85C

--50

T

C

= --40C

--55

22 24 26 28 30 32

P out

, OUTPUT POWER (dBm)

Figure 33. IS--95 Adjacent Channel Power Ratio versus Output Power

--30

--35

--40

--45

--50

V

DC

= 5 Vdc, f = 2140 MHz

Single--Carrier IS--95, 9 Channel Forward

885 kHz Measurement Offset

30 kHz Measurement Bandwidth

--55

--60

--65

T

C

= --40C

25C

85C

--70

20 22 24 26 28 30 32

P out

, OUTPUT POWER (dBm)

Figure 34. IS--95 Adjacent Channel Power Ratio versus Output Power

--30

--35

V

DC

= 5 Vdc, f = 2140 MHz

Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth

Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF)

--40

25C

85C

--45

T

C

= --40C

--50

--55

--60

--65

20 22 24 26

P out

, OUTPUT POWER (dBm)

Figure 35. Single--Carrier W--CDMA Adjacent

Channel Power Ratio versus Output Power

28

RF Device Data

Freescale Semiconductor, Inc.

MMG3006NT1

15

50 OHM TYPICAL CHARACTERISTICS

0.958

0.959

0.958

0.957

0.957

0.955

0.953

0.954

0.956

0.957

0.958

0.958

0.930

0.935

0.939

0.943

0.946

0.949

0.951

0.872

0.889

0.900

0.909

0.917

0.924

0.932

0.925

0.918

0.910

0.904

0.900

0.954

0.951

0.949

0.945

0.942

0.937

0.902

0.910

0.924

172.2

171.7

171.3

170.9

170.5

170.0

175.2

174.6

174.1

173.6

173.1

172.6

179.6

178.9

178.2

177.5

176.9

176.3

175.7

--175.3

--176.1

--177.0

--177.9

--178.8

--179.6

167.3

166.9

166.4

166.0

165.6

165.2

169.7

169.2

168.8

168.4

168.1

167.7

164.9

164.4

164.1

Table 11. Common Emitter S--Parameters

(V

DC

= 5 Vdc, T

A

= 25C, 50 Ohm System)

S

11

S

21

S

12 f

MHz

250

|S

11

|

0.821

 

--173.7

|S

21

|

2.816

 

143.3

|S

12

|

0.00597

300

350

0.841

0.860

--174.5

--175.2

2.643

2.471

137.3

132.0

0.00514

0.00455

1350

1400

1450

1500

1550

1600

1050

1100

1150

1200

1250

1300

700

750

800

850

900

950

1000

400

450

500

550

600

650

1950

2000

2050

2100

2150

2200

1650

1700

1750

1800

1850

1900

2250

2300

2350

0.994

0.978

0.964

0.952

0.945

0.941

1.172

1.133

1.098

1.067

1.039

1.015

1.605

1.522

1.448

1.380

1.320

1.266

1.216

2.309

2.149

2.030

1.908

1.796

1.695

0.999

1.016

1.034

1.048

1.053

1.038

0.941

0.944

0.951

0.969

0.975

0.985

0.995

0.922

0.823

82.4

80.5

78.5

76.5

74.3

72.0

93.4

91.5

89.7

87.8

86.0

84.3

108.2

105.8

103.4

101.3

99.2

97.2

95.2

127.6

124.2

120.3

116.9

113.8

110.8

49.0

43.7

37.5

30.2

21.7

11.9

69.6

67.0

64.1

60.9

57.4

53.5

1.2

--10.0

--20.9

0.00246

0.00250

0.00255

0.00261

0.00268

0.00275

0.00282

0.00292

0.00299

0.00306

0.00316

0.00324

0.00435

0.00371

0.00331

0.00306

0.00286

0.00269

0.00258

0.00248

0.00243

0.00240

0.00239

0.00239

0.00242

0.00332

0.00340

0.00348

0.00360

0.00361

0.00364

0.00363

0.00357

0.00346

0.00322

0.00290

0.00242

0.00178

0.00104

0.000474

21.0

19.4

16.9

14.0

9.9

5.4

23.9

24.2

24.3

23.7

23.3

22.3

--0.4

--6.9

--13.5

--19.1

--18.2

24.3

16.7

18.6

19.9

21.4

22.6

23.5

--6.6

--2.2

1.8

5.4

8.8

11.9

14.1

--35.3

--30.6

--25.9

--20.7

--15.9

--11.1

 

--61.7

--56.7

--51.6

--44.2

--46.7

--40.6

S

22

175.2

175.0

174.6

174.4

174.1

173.8

177.1

176.7

176.5

176.2

175.8

175.5

173.4

173.2

172.9

172.5

172.2

171.9

178.8

178.6

178.3

177.9

177.6

177.3

--179.9

180.0

179.9

179.6

179.5

179.3

179.0

 

--179.0

--178.9

--179.1

--180.0

--179.4

--179.6

--179.4

--179.4

--179.6

--179.5

--179.6

--179.8

(continued)

0.906

0.905

0.903

0.902

0.901

0.902

0.912

0.912

0.911

0.910

0.909

0.907

0.903

0.905

0.910

0.916

0.925

0.933

0.916

0.915

0.915

0.914

0.913

0.913

0.920

0.919

0.918

0.918

0.918

0.917

0.917

0.925

0.925

0.924

0.923

0.922

0.921

|S

22

|

0.922

0.922

0.922

0.921

0.924

0.924

MMG3006NT1

16

RF Device Data

Freescale Semiconductor, Inc.

50 OHM TYPICAL CHARACTERISTICS

Table 11. Common Emitter S--Parameters

(V

DC

= 5 Vdc, T

A

= 25C, 50 Ohm System)

(continued)

S

11

S

21

S

12

2750

2800

2850

2900

2950

3000

f

MHz

2400

2450

2500

2550

2600

2650

2700

0.986

0.988

0.988

0.989

0.990

0.990

|S

11

|

0.938

0.952

0.963

0.970

0.976

0.981

0.983

160.8

160.5

160.0

159.6

159.2

158.8

 

163.7

163.3

162.9

162.5

162.1

161.6

161.2

0.170

0.132

0.101

0.075

0.053

0.037

|S

21

|

0.711

0.600

0.498

0.408

0.332

0.268

0.215

--66.7

--67.6

--66.9

--64.1

--57.4

--43.3

 

--30.9

--39.7

--47.0

--53.1

--58.0

--61.9

--64.8

|S

12

|

0.000864

0.00152

0.00207

0.00253

0.00287

0.00316

0.00340

0.00361

0.00382

0.00402

0.00418

0.00438

0.00455

69.2

67.5

66.1

64.8

63.4

62.3

 

82.0

86.3

84.0

80.0

76.4

73.4

71.2

0.943

0.941

0.940

0.939

0.938

0.937

|S

22

|

0.938

0.943

0.945

0.946

0.947

0.945

0.944

S

22

167.4

166.5

165.9

165.1

164.5

163.9

 

171.7

171.4

171.1

170.8

170.4

169.0

168.3

RF Device Data

Freescale Semiconductor, Inc.

MMG3006NT1

17

MMG3006NT1

18

0.65

0.40

3.00

0.65

4.30

2.5 x 2.5 Solder

Pad with Thermal

Via Structure

All Dimensions in mm

NOTES:

1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE

USED IN PCB LAYOUT DESIGN.

2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS

POSSIBLE SHOULD BE PLACED ON THE BACKSIDE CENTER

METAL GROUND LANDING PATTERN.

3. REFER TO FREESCALE APPLICATION NOTE AN2467 FOR

ADDITIONAL PQFN PCB GUIDELINES.

Figure 36. Recommended Mounting Configuration

M06N

YWZ

Figure 37. Product Marking

RF Device Data

Freescale Semiconductor, Inc.

PACKAGE DIMENSIONS

RF Device Data

Freescale Semiconductor, Inc.

MMG3006NT1

19

MMG3006NT1

20

RF Device Data

Freescale Semiconductor, Inc.

RF Device Data

Freescale Semiconductor, Inc.

MMG3006NT1

21

PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS

Refer to the following resources to aid your design process.

Application Notes

 AN1955: Thermal Measurement Methodology of RF Power Amplifiers

 AN3100: General Purpose Amplifier Biasing

 AN3778: PCB Layout Guidelines for PQFN/QFN Style Packages Requiring Thermal Vias for Heat Dissipation

Software

 .s2p File

Development Tools

 Printed Circuit Boards

For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to

Software & Tools on the part’s Product Summary page to download the respective tool.

FAILURE ANALYSIS

At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In cases where Freescale is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third party vendors with moderate success. For updates contact your local Freescale Sales Office.

REVISION HISTORY

The following table summarizes revisions to this document.

Revision

0

1

2

3

4

5

Date

Jan. 2008

Mar. 2008

Description

 Initial Release of Data Sheet

 Corrected Table 7, Moisture Sensitivity Level Rating from 3 to 1, p. 3

 Corrected S--Parameter table frequency column label to read “MHz” versus “GHz”, pp. 17, 18

Mar. 2008

 Corrected Tape and Reel information from 330 mm to 12 mm, p. 1

 Corrected Figs. 24, 35, Single--Carrier W--CDMA Adjacent Channel Power Ratio versus Output Power y--axis (ACPR) unit of measure to dBc, pp. 12, 16

May 2010

 Added new Fig. 3, Third Order Output Intercept Point versus Output Power and Supply Current, p. 4

 Added AN3778, PCB Layout Guidelines for PQFN/QFN Style Packages Requiring Thermal Vias for Heat

Dissipation, Application Notes, p. 23

 Added .s2p File availability to Product Software, p. 23

Jan. 2011

 Corrected temperature at which ThetaJC is measured from 25C to 89C and added “no RF applied” to

Thermal Characteristics table to indicate that thermal characterization is performed under DC test with no

RF signal applied, p. 1

 Removed I

DC bias callout from Table 10, Common Source S--Parameters heading as bias is not a controlled value, pp. 17--18

 Added Printed Circuit Boards availability to Development Tools, p. 23

Sept. 2014

 Table 2, Maximum Ratings: updated Junction Temperature from 150C to 175C to reflect recent test results of the device, p. 1

 Table 6, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD ratings are characterized during new product development but are not 100% tested during production. ESD ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive devices, p. 2

 Removed Fig. 2, Collector Current versus Bias Voltage at Pin #1, p. 3

 Added Fig. 38, Product Marking, p. 18

 Added Failure Analysis information, p. 22

MMG3006NT1

22

RF Device Data

Freescale Semiconductor, Inc.

How to Reach Us:

Home Page:

freescale.com

Web Support:

freescale.com/support

Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document.

Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions.

Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc.,

Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners.

E

2008, 2010--2011, 2014 Freescale Semiconductor, Inc.

RF Device Data

Freescale Semiconductor, Inc.

MMG3006NT1

23

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