BLF574 1. Product profile HF / VHF power LDMOS transistor

BLF574 1. Product profile HF / VHF power LDMOS transistor
BLF574
HF / VHF power LDMOS transistor
Rev. 02 — 24 February 2009
Product data sheet
1. Product profile
1.1 General description
A 500 W to 600 W LDMOS power transistor for broadcast applications and industrial
applications in the HF to 500 MHz band.
Table 1.
Application information
Mode of operation
CW
f
VDS
PL
Gp
ηD
(MHz)
(V)
(W)
(dB)
(%)
225
50
500
26.5
70
108
50
600
27.5
73
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
n Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq
of 1000 mA:
u Average output power = 500 W
u Power gain = 26.5 dB
u Efficiency = 70 %
n Easy power control
n Integrated ESD protection
n Excellent ruggedness
n High efficiency
n Excellent thermal stability
n Designed for broadband operation (10 MHz to 500 MHz)
n Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
n Industrial, scientific and medical applications
n Broadcast transmitter applications
BLF574
NXP Semiconductors
HF / VHF power LDMOS transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
1
drain1
2
drain2
3
gate1
4
gate2
5
Simplified outline
1
Graphic symbol
1
2
5
3
3
4
5
4
[1]
source
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
BLF574
Package
Name
Description
Version
-
flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads
SOT539A
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VDS
Conditions
Min
Max
Unit
drain-source voltage
-
110
V
VGS
gate-source voltage
−0.5
+11
V
ID
drain current
-
56
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
225
°C
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
Rth(j-c)
thermal resistance from
junction to case
Tcase = 80 °C; PL = 400 W
0.23
K/W
[1]
Rth(j-c) is measured under RF conditions.
BLF574_2
Product data sheet
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Rev. 02 — 24 February 2009
2 of 18
BLF574
NXP Semiconductors
HF / VHF power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
Tj = 25 °C; per section unless otherwise specified.
Symbol Parameter
Conditions
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.5 mA
Min Typ Max Unit
110 -
-
V
2.25 V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 250 mA
1.25 1.7
VGSq
gate-source quiescent voltage
VDS = 50 V; ID = 500 mA
1.35 1.85 2.35 V
IDSS
drain leakage current
VGS = 0 V; VDS = 50 V
-
-
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
29
37.5 -
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
280 nA
gfs
forward transconductance
VDS = 10 V; ID = 12.5 A
-
17
-
S
RDS(on)
drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 8.33 A
-
0.14 -
Ω
Crs
feedback capacitance
VGS = 0 V; VDS = 50 V;
f = 1 MHz
-
1.5
-
pF
Ciss
input capacitance
VGS = 0 V; VDS = 50 V;
f = 1 MHz
-
204
-
pF
Coss
output capacitance
VGS = 0 V; VDS = 50 V;
f = 1 MHz
-
72
-
pF
2.8
µA
A
Table 7.
RF characteristics
Mode of operation: CW; f = 225 MHz; RF performance at VDS = 50 V; IDq = 1000 mA for total device;
Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit.
Symbol Parameter
Conditions
Min Typ Max Unit
Gp
power gain
PL = 400 W
25
26.5 28
dB
RLin
input return loss
PL = 400 W
13
20
-
dB
ηD
drain efficiency
PL = 400 W
66
70
-
%
BLF574_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 24 February 2009
3 of 18
BLF574
NXP Semiconductors
HF / VHF power LDMOS transistor
001aaj126
500
Coss
(pF)
400
300
200
100
0
0
10
20
30
40
50
VDS (V)
VGS = 0 V; f = 1 MHz.
Fig 1.
Output capacitance as a function of drain-source voltage; typical values per
section
6.1 Ruggedness in class-AB operation
The BLF574 is capable of withstanding a load mismatch corresponding to VSWR = 13 : 1
through all phases under the following conditions: VDS = 50 V; IDq = 1000 mA;
PL = 400 W; f = 225 MHz.
BLF574_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 24 February 2009
4 of 18
BLF574
NXP Semiconductors
HF / VHF power LDMOS transistor
7. Application information
7.1 RF performance
RF performance in a 500 W application circuit at 225 MHz.
7.1.1 1-Tone CW
001aaj127
30
Gp
(dB)
ηD
(%)
ηD
Gp
(dB)
60
28
26
40
26
24
20
24
28
001aaj128
30
80
(7)
(6)
(5)
Gp
22
0
200
22
0
600
400
(4)
(3)
(2)
(1)
0
100
200
PL(PEP) (W)
VDS = 50 V; IDq = 1000 mA; f = 225 MHz.
300
400
500
PL (W)
VDS = 50 V; f = 225 MHz.
(1) IDq = 400 mA
(2) IDq = 600 mA
(3) IDq = 800 mA
(4) IDq = 1000 mA
(5) IDq = 1200 mA
(6) IDq = 1400 mA
(7) IDq = 1800 mA
Fig 2.
Power gain and drain efficiency as functions of
load power; typical values
Fig 3.
Power gain as function of load power; typical
values
BLF574_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 24 February 2009
5 of 18
BLF574
NXP Semiconductors
HF / VHF power LDMOS transistor
001aaj129
60
PL
(dBm)
58
Ideal PL
(1)
PL
56
54
52
50
24
26
28
30
32
34
Ps (dBm)
VDS = 50 V; IDq = 1000 mA; f = 225 MHz.
(1) PL(1dB) = 57.32 dBm (540 W)
Fig 4.
Load power as function of source power; typical values
7.1.2 2-Tone CW
001aaj130
30
Gp
(dB)
ηD
(%)
ηD
28
001aaj131
0
80
IMD3
(dBc)
60
−20
40
−40
(1)
(2)
(3)
Gp
26
(4)
(5)
24
20
22
0
200
400
0
600
800
PL(PEP) (W)
VDS = 50 V; IDq = 1000 mA; f1 = 224.95 MHz;
f2 = 225.05 MHz.
−60
−80
0
200
400
600
800
PL(PEP) (W)
VDS = 50 V; f1 = 224.95 MHz; f2 = 225.05 MHz.
(1) IDq = 600 mA
(2) IDq = 800 mA
(3) IDq = 1000 mA
(4) IDq = 1200 mA
(5) IDq = 1400 mA
Fig 5.
Power gain and drain efficiency as functions of
peak envelope load power; typical values
Fig 6.
Third order intermodulation distortion as a
function of peak envelope load power; typical
values
BLF574_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 24 February 2009
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BLF574
NXP Semiconductors
HF / VHF power LDMOS transistor
7.1.3 Application circuit
Table 8.
List of components
For application circuit, see Figure 7.
Printed-Circuit Board (PCB): Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom
metallization); thickness copper plating = 35 µm.
Component Description
Value
C1, C2,
C23, C24
multilayer ceramic chip capacitor 100 pF
C3
multilayer ceramic chip capacitor 24 pF
[1]
C4, C5
multilayer ceramic chip capacitor 39 pF
[1]
C6, C9
multilayer ceramic chip capacitor 4.7 µF
TDK4532X7R1E475Mt020U
[1]
C7, C8,
C10, C11
multilayer ceramic chip capacitor 1 nF
C12, C16
electrolytic capacitor
C13, C15
multilayer ceramic chip capacitor 62 pF
[1]
C14
multilayer ceramic chip capacitor 15 pF
[1]
C17, C19
multilayer ceramic chip capacitor 47 pF
[1]
C18
multilayer ceramic chip capacitor 33 pF
[1]
C20, C22
multilayer ceramic chip capacitor 10 pF
[1]
C21
multilayer ceramic chip capacitor 18 pF
[1]
L1, L2,
L3, L4
3 turns 1 mm copper wire
D = 3 mm;
length = 3 mm
L5, L6
stripline
-
(L × W) 125 mm × 7 mm
L7, L8,
L9, L10
stripline
-
(L × W) 8 mm × 15 mm
L11, L12
stripline
-
(L × W) 132 mm × 7 mm
R1, R2
metal film resistor
10 Ω; 0.6 W
R3, R4
metal film resistor
3 Ω; 0.6 W
T1, T2,
T3, T4
semi rigid coax
50 Ω; 120 mm
[1]
220 µF; 63 V
EZ-141-AL-TP-M17
American Technical Ceramics type 100B or capacitor of same quality.
BLF574_2
Product data sheet
Remarks
[1]
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 24 February 2009
7 of 18
BLF574
NXP Semiconductors
HF / VHF power LDMOS transistor
L1
R3
T1
+
C10
C6
C7
T3
C12
R1
C17
L2
C13
C1
C3
C4 C5
C20
L6
L8
L9
L5
L7
L10
L11
C14
C18
C23
C21
C24
C2
L12
C15
C19
C22
L3
R2
C16
C8
T2
C9
+
C11
T4
R4
L4
001aaj132
Fig 7.
Component layout for class-AB application circuit
BLF574_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 24 February 2009
8 of 18
BLF574
NXP Semiconductors
HF / VHF power LDMOS transistor
7.2 Reliability
001aaj133
105
Years
(1) (2) (3) (4) (5) (6)
104
103
102
(7) (8) (9) (10) (11)
10
1
0
4
8
12
16
20
Idc (A)
TTF (0.1 % failure fraction).
(1) Tj = 100 °C
(2) Tj = 110 °C
(3) Tj = 120 °C
(4) Tj = 130 °C
(5) Tj = 140 °C
(6) Tj = 150 °C
(7) Tj = 160 °C
(8) Tj = 170 °C
(9) Tj = 180 °C
(10) Tj = 190 °C
(11) Tj = 200 °C
Fig 8.
BLF574 electromigration (ID, total device)
BLF574_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 24 February 2009
9 of 18
BLF574
NXP Semiconductors
HF / VHF power LDMOS transistor
8. Test information
8.1 Impedance information
Table 9.
Typical impedance
Simulated ZS and ZL test circuit impedances.
f
ZS
ZL
MHz
Ω
Ω
225
3.2 + j2.5
7.5 + j4.0
drain
ZL
gate
ZS
001aaf059
Fig 9.
Definition of transistor impedance
BLF574_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 24 February 2009
10 of 18
BLF574
NXP Semiconductors
HF / VHF power LDMOS transistor
8.2 RF performance
The following figures are measured in a class-AB production test circuit.
8.2.1 1-Tone CW
001aaj134
30
Gp
(dB)
80
ηD
(%)
ηD
28
001aaj135
30
Gp
(dB)
60
28
40
26
(7)
(6)
(5)
Gp
26
24
20
22
0
100
200
300
0
400
500
PL (W)
VDS = 50 V; IDq = 1000 mA; f = 225 MHz.
(4)
(3)
(2)
(1)
24
22
0
100
200
300
400
500
PL (W)
VDS = 50 V; f = 225 MHz.
(1) IDq = 400 mA
(2) IDq = 600 mA
(3) IDq = 800 mA
(4) IDq = 1000 mA
(5) IDq = 1200 mA
(6) IDq = 1400 mA
(7) IDq = 1800 mA
Fig 10. Power gain and drain efficiency as functions of
load power; typical values
Fig 11. Power gain as function of load power; typical
values
BLF574_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 24 February 2009
11 of 18
BLF574
NXP Semiconductors
HF / VHF power LDMOS transistor
001aaj136
60
PL
(dBm)
58
ideal PL
(1)
56
PL
54
52
50
24
26
28
30
32
34
Ps (dBm)
VDS = 50 V; IDq = 1000 mA; f = 225 MHz.
(1) PL(1dB) = 56.43 dBm (440 W)
Fig 12. Load power as function of source power; typical values
8.2.2 2-Tone CW
001aaj137
30
80
ηD
(%)
Gp
(dB)
ηD
28
001aaj138
0
IMD3
(dBc)
60
−20
40
−40
(1)
(2)
(3)
Gp
26
(4)
(5)
24
20
0
600
22
0
100
200
300
400
500
−60
−80
0
100
200
PL(PEP) (W)
VDS = 50 V; IDq = 1000 mA; f1 = 224.95 MHz;
f2 = 225.05 MHz.
300
400
500
600
PL(PEP) (W)
VDS = 50 V; f1 = 224.95 MHz; f2 = 225.05 MHz.
(1) IDq = 600 mA
(2) IDq = 800 mA
(3) IDq = 1000 mA
(4) IDq = 1200 mA
(5) IDq = 1400 mA
Fig 13. Power gain and drain efficiency as functions of
peak envelope load power; typical values
Fig 14. Third order intermodulation distortion as a
function of peak envelope load power; typical
values
BLF574_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 24 February 2009
12 of 18
BLF574
NXP Semiconductors
HF / VHF power LDMOS transistor
8.2.3 Test circuit
Table 10. List of components
For production test circuit, see Figure 15 and Figure 16.
Printed-Circuit Board (PCB): Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom
metallization); thickness copper plating = 35 µm.
Component Description
Value
C1, C2,
C20, C21
multilayer ceramic chip capacitor
100 pF
C3
multilayer ceramic chip capacitor
24 pF
[1]
C4, C5
multilayer ceramic chip capacitor
39 pF
[1]
C6, C7,
C10, C11
multilayer ceramic chip capacitor
1 nF
[1]
C8, C9
multilayer ceramic chip capacitor
4.7 µF
[1]
C12, C13
electrolytic capacitor
220 µF; 63 V
C14, C15
multilayer ceramic chip capacitor
47 pF
[1]
C16
multilayer ceramic chip capacitor
33 pF
[1]
C17
multilayer ceramic chip capacitor
18 pF
[1]
C18, C19
multilayer ceramic chip capacitor
10 pF
[1]
C22
multilayer ceramic chip capacitor
15 pF
[1]
C23, C24
multilayer ceramic chip capacitor
62 pF
[1]
L1, L2,
L3, L4
3 turns 1 mm copper wire
D = 3 mm;
length = 2 mm
L5, L6
stripline
-
(L × W) 125 mm × 7 mm
L7, L8,
L9, L10
stripline
-
(L × W) 8 mm × 15 mm
L11, L12
stripline
-
(L × W) 132 mm × 7 mm
R1, R2
metal film resistor
10 Ω; 0.6 W
R3, R4
metal film resistor
3 Ω; 0.6 W
T1, T2,
T3, T4
semi rigid coax
50 Ω; 120 mm
[1]
TDK4532X7R1E475Mt020U
EZ-141-AL-TP-M17
American Technical Ceramics type 100B or capacitor of same quality.
BLF574_2
Product data sheet
Remarks
[1]
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 24 February 2009
13 of 18
BLF574
NXP Semiconductors
HF / VHF power LDMOS transistor
VDD
C12
VGG
R3
L3
C8
C11
C7
R2
L1
C14
C18
C20
C23
T1
C1
C3
input
50 Ω
T2
C4 C5
C16
C22
L6
L8
L9
L11
L5
L7
L10
L12
C17
C2
C21
output
50 Ω
T3
T4
C19
C24
C15
R1
L2
C10
C6
C9
VGG
L4
L4
C13
001aaj139
VDD
Fig 15. Class-AB common-source production test circuit
L3
R3
T1
C8
C7
T3
C11
C12
R2
L1
C1
11 mm
C3
C14
C23
C4 C5
C16
C22
37 mm
11 mm
C18
C17
C20
5 mm
3 mm
C24
C2
C19
C21
C15
L2
R1
C6
T2
C10
T4
C9
R4
C13
L4
001aaj140
Fig 16. Component layout for class-AB production test circuit
BLF574_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 24 February 2009
14 of 18
BLF574
NXP Semiconductors
HF / VHF power LDMOS transistor
9. Package outline
Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads
SOT539A
D
A
F
D1
U1
B
q
C
w2 M C M
H1
1
c
2
E1
p
H U2
5
L
3
A
E
w1 M A M B M
4
w3 M
b
Q
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D1
e
E
E1
9.50
5.33 11.81 0.15 31.55 31.52
13.72
9.30
3.96 11.56 0.08 30.94 30.96
mm
inches
9.53
9.27
F
H
H1
L
1.75 17.12 25.53 3.73
1.50 16.10 25.27 2.72
p
Q
q
3.30
3.05
2.31
2.01
35.56
U1
U2
w1
41.28 10.29
0.25
41.02 10.03
w2
w3
0.51
0.25
0.210 0.465 0.006 1.242 1.241
0.374 0.375 0.069 0.674 1.005 0.147 0.130 0.091
1.625 0.405
1.400
0.010 0.020 0.010
0.540
0.156 0.455 0.003 1.218 1.219
0.366 0.365 0.059 0.634 0.995 0.107 0.120 0.079
1.615 0.395
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
99-12-28
00-03-03
SOT539A
Fig 17. Package outline SOT539A
BLF574_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 24 February 2009
15 of 18
BLF574
NXP Semiconductors
HF / VHF power LDMOS transistor
10. Abbreviations
Table 11.
Abbreviations
Acronym
Description
CW
Continuous Wave
EDGE
Enhanced Data rates for GSM Evolution
GSM
Global System for Mobile communications
HF
High Frequency
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
LDMOST
Laterally Diffused Metal-Oxide Semiconductor Transistor
RF
Radio Frequency
TTF
Time To Failure
VHF
Very High Frequency
VSWR
Voltage Standing-Wave Ratio
11. Revision history
Table 12.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLF574_2
20090224
Product data sheet
-
BLF574_1
Modifications:
BLF574_1
•
Data sheet status updated from Preliminary to Product
20081208
Preliminary data sheet
BLF574_2
Product data sheet
-
-
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 24 February 2009
16 of 18
BLF574
NXP Semiconductors
HF / VHF power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BLF574_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 24 February 2009
17 of 18
BLF574
NXP Semiconductors
HF / VHF power LDMOS transistor
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
6.1
7
7.1
7.1.1
7.1.2
7.1.3
7.2
8
8.1
8.2
8.2.1
8.2.2
8.2.3
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation. . . . . . . . . . 4
Application information. . . . . . . . . . . . . . . . . . . 5
RF performance . . . . . . . . . . . . . . . . . . . . . . . . 5
1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Application circuit . . . . . . . . . . . . . . . . . . . . . . . 7
Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Test information . . . . . . . . . . . . . . . . . . . . . . . . 10
Impedance information . . . . . . . . . . . . . . . . . . 10
RF performance . . . . . . . . . . . . . . . . . . . . . . . 11
1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 16
Legal information. . . . . . . . . . . . . . . . . . . . . . . 17
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Contact information. . . . . . . . . . . . . . . . . . . . . 17
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 24 February 2009
Document identifier: BLF574_2
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