BLS6G3135-120; BLS6G3135S-120 1. Product profile

BLS6G3135-120; BLS6G3135S-120 1. Product profile
BLS6G3135-120;
BLS6G3135S-120
LDMOS S-Band radar power transistor
Rev. 02 — 29 May 2008
Product data sheet
1. Product profile
1.1 General description
120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz
range.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = 10 %; IDq = 100 mA; in a class-AB
production test circuit.
Mode of operation
pulsed RF
f
VDS
PL
Gp
ηD
tr
tf
(GHz)
(V)
(W)
(dB)
(%)
(ns)
(ns)
3.1 to 3.5
32
120
11
43
20
6
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
n Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage
of 32 V, an IDq of 100 mA, a tp of up to 300 µs with δ of 10 %:
u Output power = 120 W
u Gain = 11 dB
u Efficiency = 43 %
n Easy power control
n Integrated ESD protection
n Excellent ruggedness
n High efficiency
n Excellent thermal stability
n Designed for broadband operation (3.1 GHz to 3.5 GHz)
n Internally matched for ease of use
n Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLS6G3135-120; BLS6G3135S-120
NXP Semiconductors
LDMOS S-Band radar power transistor
1.3 Applications
n S-Band power amplifiers for radar applications in the 3.1 GHz to 3.5 GHz frequency
range
2. Pinning information
Table 2.
Pinning
Pin
Description
Simplified outline
Symbol
BLS6G3135-120 (SOT502A)
1
drain
2
gate
3
1
1
3
[1]
source
2
2
3
sym112
BLS6G3135S-120 (SOT502B)
1
drain
2
gate
3
1
1
3
[1]
source
2
2
3
sym112
[1]
Connected to flange
3. Ordering information
Table 3.
Ordering information
Type number
BLS6G3135-120
Package
Name
Description
-
flanged LDMOST ceramic package; 2 mounting holes; SOT502A
2 leads
BLS6G3135S-120 -
Version
earless flanged LDMOST ceramic package; 2 leads
SOT502B
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Min
Max
Unit
VDS
drain-source voltage
-
60
V
VGS
gate-source voltage
−0.5
+13
V
ID
drain current
-
7.2
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
225
°C
BLS6G3135-120_6G3135S-120_2
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 02 — 29 May 2008
2 of 12
NXP Semiconductors
BLS6G3135-120; BLS6G3135S-120
LDMOS S-Band radar power transistor
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Zth(j-mb)
Conditions
transient thermal impedance from
junction to mounting base
Typ Max Unit
Tcase = 85 °C; PL = 120 W
tp = 300 µs; δ = 10 %
0.29 0.40 K/W
tp = 100 µs; δ = 20 %
0.30 0.41 K/W
6. Characteristics
Table 6.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown
voltage
VGS = 0 V; ID = 0.5 mA
60
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V;
ID = 180 mA
1.4
1.8
2.3
V
IDSS
drain leakage current
VGS = 0 V; VDS = 28 V
-
-
5
µA
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
27
33
-
A
IGSS
gate leakage current
VGS = 8.3 V; VDS = 0 V
-
-
450
nA
gfs
forward transconductance
VDS = 10 V; ID = 9 A
-
13
-
S
RDS(on)
drain-source on-state
resistance
VGS = VGS(th) + 3.75 V;
ID = 6.3 A
-
0.085
0.160 Ω
7. Application information
Table 7.
Application information
Mode of operation: pulsed RF; tp = 300 µs; δ = 10 %; RF performance at VDS = 32 V; IDq = 100 mA;
Tcase = 25 °C; unless otherwise specified, in a class-AB production circuit.
Symbol
Parameter
PL
output power
VCC
supply voltage
Gp
Conditions
Min
Typ
Max
Unit
-
120
-
W
PL = 120 W
-
-
32
V
power gain
PL = 120 W
9.5
11
-
dB
IRL
input return loss
PL = 120 W
6
10
-
dB
PL(1dB)
output power at 1 dB gain compression
PL = 120 W
-
130
-
W
ηD
drain efficiency
PL = 120 W
39
43
-
%
tr
rise time
PL = 120 W
-
20
50
ns
tf
fall time
PL = 120 W
-
6
50
ns
BLS6G3135-120_6G3135S-120_2
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 02 — 29 May 2008
3 of 12
BLS6G3135-120; BLS6G3135S-120
NXP Semiconductors
LDMOS S-Band radar power transistor
Table 8.
Typical impedance
f
ZS
ZL
GHz
Ω
Ω
3.1
2.7 − j5.4
5.9 − j5.9
3.2
3.3 − j4.7
4.5 − j6.2
3.3
4.2 − j4.4
3.5 − j6.0
3.4
5.2 − j4.8
2.7 − j5.6
3.5
5.7 − j6.2
2.0 − j5.2
drain
ZL
gate
ZS
001aaf059
Fig 1. Definition of transistor impedance
7.1 Ruggedness in class-AB operation
The BLS6G3135-120 and BLS6G3135S-120 are capable of withstanding a load
mismatch corresponding to VSWR = 5 : 1 through all phases under the following
conditions: VDS = 32 V; IDq = 100 mA; PL = 120 W; tp = 300 µs; δ = 10 %.
001aag823
13
Gp
(dB)
50
ηD
(%)
ηD
11
Gp
40
001aag824
14
Gp
(dB)
(2)
(1)
(3)
10
9
30
7
20
6
10
5
3
3
3.2
0
3.6
3.4
2
0
f (GHz)
40
80
120
160
PL (W)
VDS = 32 V; IDq = 100 mA; tp = 300 µs; δ = 10 %;
PL = 120 W.
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
VDS = 32 V; IDq = 100 mA; tp = 300 µs; δ = 10 %.
Fig 2. Power gain and drain efficiency as functions of
frequency; typical values
Fig 3. Power gain as a function of load power; typical
values
BLS6G3135-120_6G3135S-120_2
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 02 — 29 May 2008
4 of 12
BLS6G3135-120; BLS6G3135S-120
NXP Semiconductors
LDMOS S-Band radar power transistor
001aag825
50
ηD
(%)
001aag826
160
(1)
(2)
PL
(W)
(2)
(3)
40
(1)
120
(3)
30
80
20
40
10
0
0
0
40
80
120
160
0
5
10
15
PL (W)
(1) f = 3.1 GHz
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
(3) f = 3.5 GHz
VDS = 32 V; IDq = 100 mA; tp = 300 µs; δ = 10 %.
VDS = 32 V; IDq = 100 mA; tp = 300 µs; δ = 10 %.
Fig 4. Drain efficiency as a function of load power;
typical values
001aag827
13
Gp
(dB)
50
ηD
(%)
ηD
11
Gp
20
Pi (W)
40
Fig 5. Load power as a function of input power;
typical values
001aag828
14
Gp
(dB)
(2)
(1)
(3)
10
9
30
7
20
6
10
5
3
3
3.2
0
3.6
3.4
2
0
f (GHz)
40
80
120
160
PL (W)
VDS = 32 V; IDq = 100 mA; tp = 100 µs; δ = 20 %;
PL = 120 W.
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
VDS = 32 V; IDq = 100 mA; tp = 100 µs; δ = 20 %.
Fig 6. Power gain and drain efficiency as functions of
frequency; typical values
Fig 7. Power gain as a function of load power; typical
values
BLS6G3135-120_6G3135S-120_2
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 02 — 29 May 2008
5 of 12
NXP Semiconductors
BLS6G3135-120; BLS6G3135S-120
LDMOS S-Band radar power transistor
001aag829
50
001aag830
160
(1)
ηD
(%)
PL
(W)
(2)
(2)
40
(3)
(1)
120
(3)
30
80
20
40
10
0
0
0
40
80
120
160
0
PL (W)
10
15
20
Pi (W)
(1) f = 3.1 GHz
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
(3) f = 3.5 GHz
VDS = 32 V; IDq = 100 mA; tp = 100 µs; δ = 20 %.
Fig 8. Drain efficiency as a function of load power;
typical values
VDS = 32 V; IDq = 100 mA; tp = 100 µs; δ = 20 %.
Fig 9. Load power as a function of input power;
typical values
BLS6G3135-120_6G3135S-120_2
Product data sheet
5
© NXP B.V. 2008. All rights reserved.
Rev. 02 — 29 May 2008
6 of 12
BLS6G3135-120; BLS6G3135S-120
NXP Semiconductors
LDMOS S-Band radar power transistor
8. Test information
C3
+
C10
C5
C4 C6
+VGG
λ / 4-line
R2
C12
C13
-
L1
R1
+
C11
λ / 4-line
C9
+VDD
C8
C7
C1
C2
001aah591
Striplines are on a double copper-clad Rogers Duroid 6006 Printed-Circuit Board (PCB) with
εr = 6.2 and thickness = 0.64 mm.
See Table 9 for list of components.
Fig 10. Component layout for 3.1 GHz to 3.5 GHz MHz test circuit
Table 9.
List of components (see Figure 10)
To ensure good power supply of the device, adding an electrolytical capacitor close to the supply
connection of the circuit may be required. The actual capacitor value may differ depending
on the pulse format, the quality of the power supply and the length of the connecting wires to the
power supply. In general a value of 470 µF will be sufficient.
Component
Description
Remarks
[1]
C1, C2, C4, C5, C6,
C7, C8, C9, C11
multilayer ceramic chip capacitor
24 pF
C3
electrolytic capacitor
20 µF; 20 V
C10
multilayer ceramic chip capacitor
33 pF
[1]
C12
multilayer ceramic chip capacitor
1 nF
[2]
C13
electrolytic capacitor
100 µF; 63 V
L1
copper wire
-
R1
resistor
49.9 Ω
R2
SMD resistor
49.9 Ω
[1]
American Technical Ceramics type 100A or capacitor of same quality.
[2]
American Technical Ceramics type 700A or capacitor of same quality.
BLS6G3135-120_6G3135S-120_2
Product data sheet
Value
© NXP B.V. 2008. All rights reserved.
Rev. 02 — 29 May 2008
7 of 12
BLS6G3135-120; BLS6G3135S-120
NXP Semiconductors
LDMOS S-Band radar power transistor
9. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT502A
D
A
F
3
D1
U1
B
q
c
C
1
H
L
E1
p
U2
E
w1 M A M B M
A
2
w2 M C M
b
0
5
Q
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
4.72
3.43
12.83
12.57
0.15
0.08
inches
0.186
0.135
0.505 0.006
0.495 0.003
OUTLINE
VERSION
E
E1
F
H
L
p
Q
q
U1
U2
w1
w2
20.02 19.96
19.61 19.66
9.50
9.30
9.53
9.25
1.14
0.89
19.94
18.92
5.33
4.32
3.38
3.12
1.70
1.45
27.94
34.16
33.91
9.91
9.65
0.25
0.51
0.788 0.786
0.772 0.774
0.374 0.375
0.366 0.364
0.067
1.100
0.057
1.345
1.335
0.390
0.380
0.01
0.02
D
D1
0.045 0.785
0.035 0.745
0.210 0.133
0.170 0.123
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
99-12-28
03-01-10
SOT502A
Fig 11. Package outline SOT502A
BLS6G3135-120_6G3135S-120_2
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 02 — 29 May 2008
8 of 12
BLS6G3135-120; BLS6G3135S-120
NXP Semiconductors
LDMOS S-Band radar power transistor
Earless flanged LDMOST ceramic package; 2 leads
SOT502B
D
A
F
3
D
D1
c
U1
1
L
H
E1
U2
E
2
w2 M D M
b
0
5
Q
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
4.72
3.43
12.83
12.57
0.15
0.08
inches
0.186
0.135
0.505 0.006
0.495 0.003
OUTLINE
VERSION
E
E1
F
H
L
Q
U1
U2
w2
20.02 19.96
19.61 19.66
9.50
9.30
9.53
9.25
1.14
0.89
19.94
18.92
5.33
4.32
1.70
1.45
20.70
20.45
9.91
9.65
0.25
0.788 0.786
0.772 0.774
0.374 0.375
0.366 0.364
0.045 0.785
0.035 0.745
0.210
0.170
0.067 0.815
0.057 0.805
D
D1
REFERENCES
IEC
JEDEC
JEITA
0.390
0.010
0.380
EUROPEAN
PROJECTION
ISSUE DATE
03-01-10
07-05-09
SOT502B
Fig 12. Package outline SOT502B
BLS6G3135-120_6G3135S-120_2
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 02 — 29 May 2008
9 of 12
NXP Semiconductors
BLS6G3135-120; BLS6G3135S-120
LDMOS S-Band radar power transistor
10. Abbreviations
Table 10.
Abbreviations
Acronym
Description
LDMOS
Laterally Diffused Metal Oxide Semiconductor
LDMOST
Lateral Diffused Metal-Oxide Semiconductor Transistor
RF
Radio Frequency
S-Band
Short wave Band
VSWR
Voltage Standing-Wave Ratio
11. Revision history
Table 11.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLS6G3135-120_6G3135S-120_2
20080529
Product data sheet
-
BLS6G3135-120_
6G3135S-120_1
Modifications:
BLS6G3135-120_6G3135S-120_1
•
Section 8 on page 7: Component layout was added
20070814
Preliminary data sheet
BLS6G3135-120_6G3135S-120_2
Product data sheet
-
-
© NXP B.V. 2008. All rights reserved.
Rev. 02 — 29 May 2008
10 of 12
NXP Semiconductors
BLS6G3135-120; BLS6G3135S-120
LDMOS S-Band radar power transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
BLS6G3135-120_6G3135S-120_2
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 02 — 29 May 2008
11 of 12
NXP Semiconductors
BLS6G3135-120; BLS6G3135S-120
LDMOS S-Band radar power transistor
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation. . . . . . . . . . 4
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 29 May 2008
Document identifier: BLS6G3135-120_6G3135S-120_2
Was this manual useful for you? yes no
Thank you for your participation!

* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project

Download PDF

advertisement