NTE56030 & NTE56031 TRIAC, 40 Amp TO−218 Isolated Tab

NTE56030 & NTE56031 TRIAC, 40 Amp TO−218 Isolated Tab
NTE56030 & NTE56031
TRIAC, 40 Amp
TO−218 Isolated Tab
Description:
The NTE56030 and NTE56031 are 40 Amp TRIACs in a TO−218 type package with an isolated tab
designed to be driven directly with IC and MOS devices.
Applications:
D Phase Control
D Static Switching
D Light Dimming
D Motor Speed Control
D Kitchen Equipment
D Power Tools
D Solenoid Controls:
Dishwashers
Washing Machines
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Peak Repetitive Off−State Voltage (IGT = 50mA), VDRM
NTE56030 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE56031 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
RMS On−State Current (TC = +95C, Full Sine Wave), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 40A
Non−Repetitive Surge Peak On−State Current (Full Cycle, Initial TJ = +25C), ITSM
50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400A
60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 420A
I2t Value for Fusing (tp = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000A2s
Critical Rate of Rise of On−State Current (IG = 2 x IGT, tr < 100ns, TJ = +125C), di/dt . . . . 50A/s
Peak Gate Current (tp = 20s, TJ = +125C), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Average Gate Power Dissipation (TJ = +125C), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Isolation Voltage, VISO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2500VRMS
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40 to +125C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40 to +150C
Electrical Characteristics: (TJ = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Peak Off−State Current
IDRM
TJ = +25C, VDRM = VRRM
−
−
5
A
Peak Reverse Current
IRRM
TJ = +125C, VDRM = VRRM
−
5
3
mA
IGT
VD = 12V, RL = 30, Note 1
−
−
50
mA
−
−
100
mA
Gate Trigger Current
Quadrant I, II, III
Quadrant IV
Note 1. Minimum IGT is guaranteed at 5% of IGTmax.
Note 2. For both polarities of A2 referenced to A1.
Rev. 2−15
Electrical Characteristics (Cont’d): (TJ = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Gate Trigger Voltage
VGT
VD = 12V, RL = 30
Gate Non−Trigger Voltage
VGD
VD = VDRM, TJ = +125C, RL = 3.3k
Holding Current
IH
IT = 100mA, Note 2
Latching Current
Quadrant I, III, IV
IL
IG = 1.2IGT
Quadrant II
Critical Rate of Rise of
Off−State Voltage
Critical Rate of Rise of
Commutation Voltage
dv/dt
VD = 67%VDRM, Gate Open, TJ = +125C,
Note 2
dv/dt(c) di/dt(c) = 13.3A/ms, TJ = +125C, Note 2
Min
Typ
Max
Unit
−
−
1.3
V
0.2
−
−
V
−
−
80
mA
−
−
75
mA
−
−
160
mA
500
−
−
V/s
10
−
−
V/s
Peak On−State Voltage
VTM
ITM = 35A, tp = 380s, Note 2
−
−
1.55
V
Threshold Voltage
VTO
TJ = +125C, Note 2
−
−
0.85
V
rD
TJ = +125C, Note 2
−
−
10
m
Dynamic Resistance
Note 1. Minimum IGT is guaranteed at 5% of IGTmax.
Note 2. For both polarities of A2 referenced to A1.
.626 (15.92)
.166 Max
(4.23)
Dia Max
Isol
.200
(5.08)
Max
.147 (3.76)
.815
(20.72)
.490
(12.44)
MT1
MT2 Gate
.500
(12.7)
Min
.215 (5.47)
.110 (2.79)
.050
(1.27)
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