ML8511 GENERAL DISCRIPTION

ML8511 GENERAL DISCRIPTION
FEDL8511-05
Issue Date: March 08, 2013
ML8511
UV Sensor with Voltage Output
GENERAL DISCRIPTION
The ML8511 is a UV sensor, which is suitable for acquiring UV intensity indoors or outdoors. The ML8511 is
equipped with an internal amplifier, which converts photo-current to voltage depending on the UV intensity.
This unique feature offers an easy interface to external circuits such as ADC. In the power down mode, typical
standby current is 0.1A, thus enabling a longer battery life.
FEATURES
• Photodiode sensitive to UV-A and UV-B
• Embedded operational amplifier
• Analog voltage output
• Low supply current (300A typ.) and low standby current (0.1A typ.)
• Small and thin surface mount package (4.0mm x 3.7mm x 0.73mm, 12-pin ceramic QFN)
APPLICATIONS
• Smart phone, Watch, Weather station,Bicycle navigation, Accessary, Gaming
BLOCK DAIAGRAM
TP
VDD
EN
7
4
9
Amplifier
8
OUT
UV Photodiode
ML8511
5
10
GND
TR
PIN CONFIGURATIONS
Pin
7
5
4
8
9
10
Symbol
VDD
GND
EN
OUT
TP
TR
I/O
PW
PW
I
O
I/O
I/O
1,2,3, 6,11,12
NC
-
Function
Supply voltage. Decouple this pin to ground with 0.1 F capacitor.
Ground
Active high enable pin. (High: Active mode, Low: Standby mode)
Output (Low in power down or standby mode)
Test pin. Do not connect.
Internal reference voltage. Decouple this pin to ground with 1 nF
capacitor.
No Connection. Do not connect.
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EXAMPLE OF CONNCTING DIAGRAM
ML8511
7
VDD
OUT
8
EN
4
0.1uF
5
GND
ADC
PORT
TR
10
1nF
* Load resistance of OUT port is recommended more than 100 k.
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ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Condition
Rating
unit
VDD
Ta=25 C
-0.3 to +4.6
V
Input Voltage
VI
Ta=25 C
-0.3 to +4.6
V
Output Short Current
IOS
Ta=25 C
5
mA
Power Dissipation
PD
Ta=25 C
30
mW
Storage Temperature
Tstg
-
-30 to +85
C
Supply Voltage
RECOMENTED OPERATION CONDITIONS
Parameter
Symbol
Min.
Typ.
Max.
unit
Operating Voltage
VDD
2.7
3.3
3.6
V
Operating Temperature
Ta
-20
-
70
C
ELECTRO-OPTICAL CHARACTERISTICS
(VDD=+2.7V to +3.6V, Ta= -20C to +70C)
Parameter
Symbol
Condition
Min.
Typ.
Max.
unit
Supply Current (active mode)
IDDA
VEN=VDD
-
300
500
A
Supply Current (standby mode)
IDDS
VEN=0
-
0.1
1
A
Input Voltage (High level)
VIH
-
VDD × 0.8
-
VDD + 0.3
V
Input Voltage (Low level)
VIL
-
-0.2
-
0.72
V
High level input current
IIH
VEN=VDD
-
-
1
A
Low level input current
IIL
VEN=0
-1
-
-
A
Wavelength of maximum sensitivity
p
Ta=25C
-
365
-
nm
Output Setup Time
TSU
-
-
1
ms
Output Voltage (Shading) *
VREF
VEN=VDD
Ta=25C,
VEN=VDD
Ta=25C,
VEN=VDD
0.95
1.0
1.05
V
2.08
2.2
2.32
V
Output Voltage (10mW/cm at p) *
2
VO
* Load resistance of OUT port is recommended more than 100 k.
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ML8511
OUTPUT VALTAGE– UV INTENSITY CHARCTERISTICS
VDD=3.0V
3.5
Output Voltage (V)
3.0
2.5
2.0
75 ℃
25 ℃
1.5
-5 ℃
1.0
-25 ℃
0.5
0
3
6
9
12
2
UV Intensity (mW/cm ) @ λ365nm
15
SPECTRAL RESPONSIVILITY CHARACTERISTICS
Ta=25°C, VDD=3.0V
Relative Responsivity
1.0
0.8
0.6
0.4
0.2
0.0
280
320
360
400
440
480
520
560
Wavelength (nm)
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ML8511
TIMING CHART
Supply voltage and EN signal state should take one of the following procedures:
1. EN should be HIGH or LOW at the same time when VDD is applied.
2. EN should be HIGH or LOW while VDD is applied.
Output should be read after output voltage level becomes stable. Maximum time required until stable output
voltage reaches is 1 millisecond after EN goes HIGH.
VDD
EN
TSU
OUT
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PACKAGE DIMENTIONS
(Unit: mm)
Notes for Mounting the Surface Mount Type Package
The surface mount type packages are very susceptible to heat in reflow mounting and humidity absorbed in
storage. Therefore, before you perform reflow mounting, contact our responsible sales person for the product
name, package name, pin number, package code and desired mounting conditions (reflow method, temperature
and times).
Specifications are defined without considering the UV absorption by an external cover material.
Please contact our sales representativeus when the cover material is applied.
Do not press or rub the surface of the resin covering the top of the package where, which is on the UV-ray is
light received.
In addition, do not apply pressure at high temperature.
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REVISON HISTORY
Document No.
Date
Page
Previous
Current
Edition
Edition
FEDL851100FC-01
Sep. 3, 2008
-
FEDL8511-02
Jan. 24, 2008
FEDL8511-03
FJDL8511-04
FJDL8511-05
Preliminary edition
-
1
Added disclaimer
-
-
Changed Logo OKI to OKI SEMICONDUCTOR
1
5
2
1
3
2
3
2
Changed load resistance 500 k to 100 k
-
3
Added graphs
-
4
Added “TIMING CHART”
1
1
Feature description is removed. Applications
section is added.
4
4
Explanation is provided to the timing chart.
5
5
Package drawing is updated.
Descriptions in the NOTE are modified.
DISCLIMER is removed.
1
1
Descriptions in Pin configurations are modified.
-
2
Example of connecting diagram is added.
Nov. 7, 2008
Jan. 17, 2013
Mar. 8, 2013
Description
The following items has been moved:
PACKAGE, NOTICE, PRECAUTION and
DISCLAIMER.
The following items have been moved:
BLOCK DIAGRAM and PIN CONFIGRATION
The following tables has been partially modified:
RECOMMENDED OPERATING CONDITIONS
ELECTRO-OPTICAL CHARACTERISTICS
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FEDL8511-05
ML8511
NOTES
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Semiconductor Co., Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing LAPIS Semiconductor's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be
obtained from LAPIS Semiconductor upon request.
Examples of application circuits, circuit constants and any other information contained herein illustrate the
standard usage and operations of the Products. The peripheral conditions must be taken into account when
designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document. However, should
you incur any damage arising from any inaccuracy or misprint of such information, LAPIS Semiconductor shall
bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and examples of
application circuits for the Products. LAPIS Semiconductor does not grant you, explicitly or implicitly, any
license to use or exercise intellectual property or other rights held by LAPIS Semiconductor and other parties.
LAPIS Semiconductor shall bear no responsibility whatsoever for any dispute arising from the use of such
technical information.
The Products specified in this document are intended to be used with general-use electronic equipment or
devices (such as audio visual equipment, office-automation equipment, communication devices, electronic
appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While LAPIS Semiconductor always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard against the
possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as
derating, redundancy, fire control and fail-safe designs. LAPIS Semiconductor shall bear no responsibility
whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction
manual.
The Products are not designed or manufactured to be used with any equipment, device or system which requires
an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human
life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace
machinery, nuclear-reactor controller, fuel-controller or other safety device). LAPIS Semiconductor shall bear no
responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended
to be used for any such special purpose, please contact a ROHM sales representative before purchasing.
If you intend to export or ship overseas any Product or technology specified herein that may be controlled under
the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the
Law.
Copyright
2008 - 2013 LAPIS Semiconductor Co., Ltd.
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