BLF571 1. Product profile HF / VHF power LDMOS transistor

BLF571 1. Product profile HF / VHF power LDMOS transistor
BLF571
HF / VHF power LDMOS transistor
Rev. 02 — 24 February 2009
Product data sheet
1. Product profile
1.1 General description
A 20 W LDMOS RF transistor for broadcast applications and industrial applications in the
HF and VHF band.
Table 1.
Production test performance
Mode of operation
CW
f
VDS
PL
Gp
ηD
(MHz)
(V)
(W)
(dB)
(%)
225
50
20
27.5
70
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
n Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq
of 50 mA:
u Average output power = 20 W
u Power gain = 27.5 dB
u Efficiency = 70 %
n Easy power control
n Integrated ESD protection
n Excellent ruggedness
n High efficiency
n Excellent thermal stability
n Designed for broadband operation (10 MHz to 500 MHz)
n Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
n Industrial, scientific and medical applications
n Broadcast transmitter applications
BLF571
NXP Semiconductors
HF / VHF power LDMOS transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
1
drain
2
gate
3
source
Simplified outline
Graphic symbol
1
1
[1]
3
2
3
2
[1]
sym112
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
BLF571
Package
Name
Description
Version
-
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
SOT467C
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
-
110
V
VGS
gate-source voltage
−0.5
+11
V
ID
drain current
-
3.6
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
225
°C
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Typ Unit
Rth(j-c)
thermal resistance from junction to case
Tcase = 80 °C; PL = 20 W
2.9
BLF571_2
Product data sheet
K/W
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 24 February 2009
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BLF571
NXP Semiconductors
HF / VHF power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown
voltage
VGS = 0 V; ID = 0.25 mA
110
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 25 mA
1.25
1.7
2.25
V
VGSq
gate-source quiescent voltage
VDS = 50 V; ID = 50 mA
1.25
1.75
2.25
V
IDSS
drain leakage current
VGS = 0 V; VDS = 50 V
-
-
1.4
µA
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
3.0
3.6
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
140
nA
gfs
forward transconductance
VDS = 10 V; ID = 1.25 A
-
1.8
-
S
RDS(on)
drain-source on-state
resistance
VGS = VGS(th) + 3.75 V;
ID = 833 mA
-
1.34
-
Ω
Crs
feedback capacitance
VGS = 0 V; VDS = 50 V;
f = 1 MHz
-
0.18
-
pF
Ciss
input capacitance
VGS = 0 V; VDS = 50 V;
f = 1 MHz
-
22.9
-
pF
Coss
output capacitance
VGS = 0 V; VDS = 50 V;
f = 1 MHz
-
9.64
-
pF
Table 7.
RF characteristics
Mode of operation: CW; f = 225 MHz; RF performance at VDS = 50 V; IDq = 50 mA; Tcase = 25 °C;
unless otherwise specified; in a class-AB production test circuit.
Symbol
Parameter
Conditions
Min
Gp
power gain
PL = 20 W
25.5
27.5
29.5
dB
RLin
input return loss
PL = 20 W
10
13
-
dB
ηD
drain efficiency
PL = 20 W
67
70
-
%
BLF571_2
Product data sheet
Typ
Max
Unit
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 24 February 2009
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BLF571
NXP Semiconductors
HF / VHF power LDMOS transistor
001aaj172
50
Coss
(pF)
40
30
20
10
0
0
10
20
30
40
50
VDS (V)
VGS = 0 V; f = 1 MHz.
Fig 1.
Output capacitance as a function of drain-source voltage; capacitance value
without internal matching
6.1 Ruggedness in class-AB operation
The BLF571 is capable of withstanding a load mismatch corresponding to VSWR = 13 : 1
through all phases under the following conditions: VDS = 50 V; IDq = 50 mA; PL = 20 W;
f = 225 MHz.
7. Application information
7.1 Impedance information
Table 8.
Typical impedance
Simulated ZS and ZL test circuit impedances.
f
ZS
ZL
MHz
Ω
Ω
225
9.7 + j31.5
31.7 + j29.3
drain
ZL
gate
ZS
001aaf059
Fig 2.
Definition of transistor impedance
BLF571_2
Product data sheet
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Rev. 02 — 24 February 2009
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BLF571
NXP Semiconductors
HF / VHF power LDMOS transistor
7.2 Reliability
001aaj173
105
Years
(1) (2) (3) (4) (5) (6)
104
103
102
10
(7) (8) (9) (10) (11)
1
0
0.4
0.8
1.2
1.6
IDS(DC) (A)
TTF (0.1 % failure fraction).
(1) Tj = 100 °C
(2) Tj = 110 °C
(3) Tj = 120 °C
(4) Tj = 130 °C
(5) Tj = 140 °C
(6) Tj = 150 °C
(7) Tj = 160 °C
(8) Tj = 170 °C
(9) Tj = 180 °C
(10) Tj = 190 °C
(11) Tj = 200 °C
Fig 3.
BLF571 electromigration
BLF571_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 24 February 2009
5 of 13
BLF571
NXP Semiconductors
HF / VHF power LDMOS transistor
8. Test information
8.1 RF performance
The following figures are measured in a class-AB production test circuit.
8.1.1 1-Tone CW
001aaj174
30
80
ηD
(%)
Gp
(dB)
Gp
(dB)
60
28
26
40
26
24
20
24
0
22
28
Gp
001aaj175
30
ηD
22
0
5
10
15
20
25
PL (W)
30
(5)
(4)
(3)
(2)
(1)
0
VDS = 50 V; IDq = 50 mA; f = 225 MHz.
5
10
15
20
25
PL (W)
30
VDS = 50 V; f = 225 MHz.
(1) IDq = 20 mA
(2) IDq = 40 mA
(3) IDq = 50 mA
(4) IDq = 60 mA
(5) IDq = 80 mA
Fig 4.
Power gain and drain efficiency as function of
load power; typical values
Fig 5.
Power gain as a function of load power; typical
values
BLF571_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 24 February 2009
6 of 13
BLF571
NXP Semiconductors
HF / VHF power LDMOS transistor
001aaj176
50
PL
(dBm)
48
ideal PL
46
(2)
44
(1)
PL
42
40
13
15
17
19
21
Pi (dBm)
VDS = 50 V; IDq = 50 mA; f = 225 MHz.
(1) PL(1dB) = 43.3 dBm (21.4 W)
(2) PL(3dB) = 44 dBm (25.1 W)
Fig 6.
Load power as function of input power; typical values
8.1.2 2-Tone CW
001aaj177
30
ηD
(%)
Gp
(dB)
28
IMD3
(dBc)
60
Gp
26
001aaj178
0
80
−20
40
ηD
(1)
(2)
(3)
(4)
(5)
−40
24
20
22
0
0
10
20
−60
30
0
PL(PEP) (W)
VDS = 50 V; IDq = 50 mA; f1 = 224.95 MHz;
f2 = 225.05 MHz.
10
20
30
PL(PEP) (W)
VDS = 50 V; f1 = 224.95 MHz; f2 = 225.05 MHz.
(1) IDq = 20 mA
(2) IDq = 40 mA
(3) IDq = 50 mA
(4) IDq = 60 mA
(5) IDq = 80 mA
Fig 7.
Power gain and drain efficiency as function of
peak envelope load power; typical values
Fig 8.
Third order intermodulation distortion as a
function of peak envelope load power; typical
values
BLF571_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 24 February 2009
7 of 13
BLF571
NXP Semiconductors
HF / VHF power LDMOS transistor
8.2 Test circuit
Table 9.
List of components
All capacitors should be soldered vertically. For test circuit, see Figure 9 and Figure 10.
Component
Description
Value
Remarks
C1, C3, C4,
C5, C14
multilayer ceramic chip capacitor 100 pF
[1]
C2
multilayer ceramic chip capacitor 39 pF
[1]
C6
multilayer ceramic chip capacitor 68 pF
[1]
C7, C9
multilayer ceramic chip capacitor 1 nF
[1]
C8
multilayer ceramic chip capacitor 4.7 µF
C10
multilayer ceramic chip capacitor 8.2 pF
C11
electrolytic capacitor
C12
multilayer ceramic chip capacitor 33 pF
[1]
C13
multilayer ceramic chip capacitor 15 pF
[1]
L1
1 turn enamelled copper wire
D = 5.5 mm;
d = 1 mm;
length = 1 mm
L2
2 turns enamelled copper wire
D = 3.5 mm;
d = 1 mm;
length = 3 mm
L3
5 turns enamelled copper wire
D = 6 mm;
d = 1 mm;
length = 5 mm
L4
3.3 turns enamelled copper wire
D = 3 mm;
d = 1 mm;
length = 4 mm
L5
3 turns enamelled copper wire
D = 3 mm;
d = 1 mm;
length = 3 mm
L6
stripline
-
[2]
(L × W) 16.5 mm × 2.4 mm
L7, L8, L10,
stripline
L11, L17, L19,
L20
-
[2]
(L × W) 3.0 mm × 5.0 mm
L9
stripline
-
[2]
(L × W) 43.0 mm × 2.4 mm
L12, L15
stripline
-
[2]
(L × W) 3.5 mm × 2.4 mm
-
[2]
(L × W) 8.0 mm × 8.0 mm
-
[2]
(L × W) 3.0 mm × 5.9 mm
(L × W) 27.0 mm × 2.4 mm
(L × W) 28.5 mm × 2.4 mm
L13, L14
L16
stripline
stripline
TDK C4532X7R1E475MT020U or equivalent
[1]
220 µF
L18
stripline
-
[2]
L21
stripline
-
[2]
R1
metal film resistor
1000 Ω; 0.6 W
[1]
American Technical Ceramics type 100B or capacitor of same quality.
[2]
Printed-Circuit Board (PCB): Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization);
thickness copper plating = 35 µm.
BLF571_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 24 February 2009
8 of 13
BLF571
NXP Semiconductors
HF / VHF power LDMOS transistor
VGG
C11
C7
C9
R1
input
50 Ω C1
L7
L6
L1
L8
C3
C4
L3
L10 L2 L11
L9
L16 L4 L17
L13
C2
VDD
C8
C5
L12
C6
L19 L5 L20
L18
L21
C14
output
50 Ω
L14
L15
C10
C12
C13
001aaj179
Fig 9.
Class-AB common-source production test circuit
C11
C8
C7
C9
R1
L1
C1
L3
L2
C2
C3 C4
3 mm
5.5 mm
C5 C6
L5
L4
C12
C10
9 mm
6.5 mm
NXP BLF571 225 MHz INPUT PCB REV1
C14
C13
5 mm
NXP BLF571 225 MHz OUTPUT PCB REV2
001aaj180
Fig 10. Component layout for class-AB production test circuit
BLF571_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 24 February 2009
9 of 13
BLF571
NXP Semiconductors
HF / VHF power LDMOS transistor
9. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT467C
D
A
F
3
D1
U1
B
q
c
C
1
E1
H
U2
E
A
w1 M A M B M
p
2
Q
w2 M C M
b
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D1
E
E1
F
H
p
Q
q
U1
U2
w1
w2
mm
4.67
3.94
5.59
5.33
0.15
0.10
9.25
9.04
9.27
9.02
5.92
5.77
5.97
5.72
1.65
1.40
18.54
17.02
3.43
3.18
2.21
1.96
14.27
20.45
20.19
5.97
5.72
0.25
0.51
inch
0.184 0.220 0.006
0.155 0.210 0.004
0.364 0.365
0.356 0.355
0.233
0.227
0.235 0.065
0.225 0.055
0.73
0.67
0.135 0.087
0.805 0.235
0.562
0.010 0.020
0.125 0.077
0.795 0.225
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
99-12-06
99-12-28
SOT467C
Fig 11. Package outline SOT467C
BLF571_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 24 February 2009
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BLF571
NXP Semiconductors
HF / VHF power LDMOS transistor
10. Abbreviations
Table 10.
Abbreviations
Acronym
Description
CW
Continuous Wave
EDGE
Enhanced Data rates for GSM Evolution
GSM
Global System for Mobile communications
HF
High Frequency
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
LDMOST
Laterally Diffused Metal-Oxide Semiconductor Transistor
RF
Radio Frequency
TTF
Time To Failure
VHF
Very High Frequency
VSWR
Voltage Standing-Wave Ratio
11. Revision history
Table 11.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLF571_2
20090224
Product data sheet
-
BLF571_1
Modifications:
BLF571_1
•
Data sheet status updated from Preliminary to Product
20081211
Preliminary data sheet
BLF571_2
Product data sheet
-
-
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 24 February 2009
11 of 13
BLF571
NXP Semiconductors
HF / VHF power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BLF571_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 24 February 2009
12 of 13
BLF571
NXP Semiconductors
HF / VHF power LDMOS transistor
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
6.1
7
7.1
7.2
8
8.1
8.1.1
8.1.2
8.2
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation. . . . . . . . . . 4
Application information. . . . . . . . . . . . . . . . . . . 4
Impedance information . . . . . . . . . . . . . . . . . . . 4
Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6
RF performance . . . . . . . . . . . . . . . . . . . . . . . . 6
1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 24 February 2009
Document identifier: BLF571_2
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