BLF573; BLF573S 1. Product profile HF / VHF power LDMOS transistor

BLF573; BLF573S 1. Product profile HF / VHF power LDMOS transistor
BLF573; BLF573S
HF / VHF power LDMOS transistor
Rev. 3 — 8 July 2010
Product data sheet
1. Product profile
1.1 General description
A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific
and medical applications in the HF to 500 MHz band.
Table 1.
Production test information
Mode of operation
CW
f
VDS
PL
Gp
ηD
(MHz)
(V)
(W)
(dB)
(%)
225
50
300
27.2
70
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
„ Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an
IDq of 900 mA:
‹ Average output power = 300 W
‹ Power gain = 27.2 dB
‹ Efficiency = 70 %
„ Easy power control
„ Integrated ESD protection
„ Excellent ruggedness
„ High efficiency
„ Excellent thermal stability
„ Designed for broadband operation (HF and VHF band)
„ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
„ Industrial, scientific and medical applications
„ Broadcast transmitter applications
BLF573; BLF573S
NXP Semiconductors
HF / VHF power LDMOS transistor
2. Pinning information
Table 2.
Pin
Pinning
Description
Simplified outline
Graphic symbol
BLF573 (SOT502A)
1
drain
2
gate
3
source
1
1
3
[1]
2
2
3
sym112
BLF573S (SOT502B)
1
drain
2
gate
3
source
1
1
3
[1]
2
2
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number Package
Name Description
Version
BLF573
-
flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A
BLF573S
-
earless flanged LDMOST ceramic package, 2 leads
SOT502B
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
-
110
V
VGS
gate-source voltage
−0.5
+11
V
ID
drain current
-
42
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
225
°C
5. Thermal characteristics
Table 5.
Symbol
Parameter
Conditions
Rth(j-c)
thermal resistance from
junction to case
Tcase = 80 °C; PL = 300 W
[1]
BLF573_BLF573S
Product data sheet
Thermal characteristics
[1]
Typ
Unit
0.21
K/W
Rth(j-c) is measured under RF conditions.
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HF / VHF power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 3.75 mA
Min
Typ
Max
Unit
110
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 375 mA
1.25
1.7
2.25
V
VGSq
gate-source quiescent voltage
VDS = 50 V; ID = 900 mA
1.45
1.95
2.45
V
IDSS
drain leakage current
VGS = 0 V; VDS = 50 V
-
-
4.2
μA
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
44
56
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
420
nA
gfs
forward transconductance
VDS = 10 V; ID = 18.75 A
-
20
-
S
RDS(on)
drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 12.49 A
-
0.09
-
Ω
Crs
feedback capacitance
VGS = 0 V; VDS = 50 V;
f = 1 MHz
-
2.3
-
pF
Ciss
input capacitance
VGS = 0 V; VDS = 50 V;
f = 1 MHz
-
300
-
pF
Coss
output capacitance
VGS = 0 V; VDS = 50 V;
f = 1 MHz
-
103
-
pF
Table 7.
RF characteristics
Mode of operation: CW; f = 225 MHz; RF performance at VDS = 50 V; IDq = 900 mA; Tcase = 25 °C;
unless otherwise specified; in a class-AB production test circuit.
BLF573_BLF573S
Product data sheet
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Gp
power gain
PL = 300 W
26
27.2
28.4
dB
RLin
input return loss
PL = 300 W
10
13
-
dB
ηD
drain efficiency
PL = 300 W
67
70
-
%
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BLF573; BLF573S
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HF / VHF power LDMOS transistor
001aaj141
800
Coss
(pF)
600
400
200
0
0
10
20
30
40
50
VDS (V)
VGS = 0 V; f = 1 MHz.
Fig 1.
Output capacitance as a function of drain-source voltage; capacitance value
without internal matching
6.1 Ruggedness in class-AB operation
The BLF573 and BLF573S are capable of withstanding a load mismatch corresponding to
VSWR = 13 : 1 through all phases under the following conditions: VDS = 50 V;
IDq = 900 mA; PL = 300 W; f = 225 MHz.
7. Application information
7.1 Impedance information
Table 8.
Typical impedance
Measured ZS and ZL test circuit impedances.
f
ZS
ZL
MHz
Ω
Ω
225
0.7 + j2.0
1.95 + j2.0
drain
ZL
gate
ZS
001aaf059
Fig 2.
BLF573_BLF573S
Product data sheet
Definition of transistor impedance
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HF / VHF power LDMOS transistor
7.2 Reliability
001aaj142
105
Years
(1)
(2)
(3)
(4)
(5)
(7)
(8)
(9) (10) (11)
(6)
104
103
102
10
1
0
4
8
12
16
20
Idc (A)
TTF (0.1 % failure fraction).
(1) Tj = 100 °C
(2) Tj = 110 °C
(3) Tj = 120 °C
(4) Tj = 130 °C
(5) Tj = 140 °C
(6) Tj = 150 °C
(7) Tj = 160 °C
(8) Tj = 170 °C
(9) Tj = 180 °C
(10) Tj = 190 °C
(11) Tj = 200 °C
Fig 3.
BLF573_BLF573S
Product data sheet
BLF573 and BLF573S electromigration (ID, total device)
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HF / VHF power LDMOS transistor
8. Test information
8.1 RF Performance
The following figures are measured in a class-AB production test circuit.
8.1.1 1-Tone CW
001aaj612
30
ηD
(%)
Gp
(dB)
28
001aaj613
30
80
(7)
(6)
(5)
Gp
(dB)
60
28
40
26
20
24
Gp
ηD
26
24
22
0
100
200
0
400
300
(1)
(2)
(3)
(4)
22
0
100
200
PL (W)
300
400
PL (W)
VDS = 50 V; IDq = 900 mA; f = 225 MHz.
VDS = 50 V; f = 225 MHz.
(1) IDq = 500 mA
(2) IDq = 700 mA
(3) IDq = 900 mA
(4) IDq = 1100 mA
(5) IDq = 1300 mA
(6) IDq = 1500 mA
(7) IDq = 1700 mA
Fig 4.
Power gain and drain efficiency as functions
of load power; typical values
BLF573_BLF573S
Product data sheet
Fig 5.
Power gain as function of load power; typical
values
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HF / VHF power LDMOS transistor
001aaj614
60
PL
(dBm)
Ideal PL
58
(2)
56
(1)
PL
54
52
50
24
26
28
30
32
34
Pi (dBm)
VDS = 50 V; IDq = 900 mA; f = 225 MHz.
(1) PL(1dB) = 55.2 dBm (330 W)
(2) PL(3dB) = 55.8 dBm (380 W)
Fig 6.
Load power as function of input power; typical values
BLF573_BLF573S
Product data sheet
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HF / VHF power LDMOS transistor
8.1.2 2-Tone CW
001aaj615
30
ηD
(%)
Gp
(dB)
28
ηD
26
24
−20
40
−40
20
22
0
100
200
300
IMD3
(dBc)
60
Gp
VDS = 50 V; IDq = 900 mA; f1 = 224.95 MHz;
f2 = 225.05 MHz.
(1)
(2)
(3)
(4)
(5)
(8)
(7)
(6)
−60
−80
0
400
500
PL(PEP) (W)
001aaj616
0
80
0
100
200
300
400
500
PL(PEP) (W)
VDS = 50 V; f1 = 224.95 MHz; f2 = 225.05 MHz.
(1) IDq = 500 mA
(2) IDq = 700 mA
(3) IDq = 900 mA
(4) IDq = 1100 mA
(5) IDq = 1300 mA
(6) IDq = 1500 mA
(7) IDq = 1700 mA
(8) IDq = 1800 mA
Fig 7.
Power gain and drain efficiency as functions
of peak envelope load power; typical values
Fig 8.
Third order intermodulation distortion as a
function of peak envelope load power; typical
values
8.2 Test circuit
Table 9.
List of components
For production test circuit, see Figure 9 and Figure 10.
Printed-Circuit Board (PCB): Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization);
thickness copper plating = 35 μm.
Component
Description
Value
B1
ferrite SMD bead
100 Ω; 100 MHz
Remarks
Ferroxcube BDS3/3/8.9-4S2 or equivalent
C1, C18
multilayer ceramic chip capacitor
100 pF
[1]
C2
multilayer ceramic chip capacitor
39 pF
[1]
C3, C4
multilayer ceramic chip capacitor
180 pF
[1]
C5, C6, C7
multilayer ceramic chip capacitor
220 pF
[1]
C8, C20
multilayer ceramic chip capacitor
1 nF
[1]
C9
multilayer ceramic chip capacitor
4.7 μF
C10
multilayer ceramic chip capacitor
30 pF
[1]
C11, C12, C13 multilayer ceramic chip capacitor
51 pF
[1]
C14
43 pF
[1]
multilayer ceramic chip capacitor
BLF573_BLF573S
Product data sheet
TDK C4532X7R1E475MT020U or equivalent
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HF / VHF power LDMOS transistor
Table 9.
List of components …continued
For production test circuit, see Figure 9 and Figure 10.
Printed-Circuit Board (PCB): Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization);
thickness copper plating = 35 μm.
Component
Description
Value
Remarks
C15
multilayer ceramic chip capacitor
33 pF
[1]
C16
multilayer ceramic chip capacitor
36 pF
[1]
C17
multilayer ceramic chip capacitor
16 pF
[1]
C19
electrolytic capacitor
220 μF; 63 V
L1
2 turns enamelled copper wire
D = 3 mm;
d = 1 mm;
length = 2 mm;
leads = 2 × 6 mm
L2
4 turns enamelled copper wire
D = 2 mm;
d = 1 mm;
length = 13 mm;
leads = 2 × 5 mm
L3
stripline
-
(L × W) 96 mm × 3 mm
L4, L5
stripline
-
(L × W) 15 mm × 8 mm
L6
stripline
-
(L × W) 105 mm × 6 mm
L7
stripline
-
(L × W) 3 mm × 6 mm
L8
stripline
-
(L × W) 12 mm × 6 mm
R1
metal film resistor
100 Ω; 0.6 W
[1]
American Technical Ceramics type 100B or capacitor of same quality.
VDD
C19
VGG
C9
B1
C8
C20
L1
R1
C13
input
50 Ω C1
C3
C14
C7
L7
L3
L4
C2
L5
C4
C5
C6
L2
L6
C16
C10
C11
L8
C18
output
50 Ω
C17
C12
C15
001aaj148
Fig 9.
Class-AB common-source production test circuit
BLF573_BLF573S
Product data sheet
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HF / VHF power LDMOS transistor
B1
C19
C9
C8
C13 C14
C7
C3
C20
R1
L2
L1
C18
C1
C2
C4
C5
C6
C17
C16
C11 C12
C10
C15
001aaj149
Fig 10. Component layout for class-AB production test circuit
BLF573_BLF573S
Product data sheet
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Rev. 3 — 8 July 2010
© NXP B.V. 2010. All rights reserved.
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HF / VHF power LDMOS transistor
9. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT502A
D
A
F
3
D1
U1
B
q
c
C
1
H
L
E1
p
U2
E
w1 M A M B M
A
2
w2 M C M
b
0
5
Q
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
4.72
3.43
12.83
12.57
0.15
0.08
inches
0.186
0.135
0.505 0.006
0.495 0.003
OUTLINE
VERSION
E
E1
F
H
L
p
Q
q
U1
U2
w1
w2
20.02 19.96
19.61 19.66
9.50
9.30
9.53
9.25
1.14
0.89
19.94
18.92
5.33
4.32
3.38
3.12
1.70
1.45
27.94
34.16
33.91
9.91
9.65
0.25
0.51
0.788 0.786
0.772 0.774
0.374 0.375
0.366 0.364
0.067
1.100
0.057
1.345
1.335
0.390
0.380
0.01
0.02
D
D1
0.045 0.785
0.035 0.745
0.210 0.133
0.170 0.123
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
99-12-28
03-01-10
SOT502A
Fig 11. Package outline SOT502A
BLF573_BLF573S
Product data sheet
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Rev. 3 — 8 July 2010
© NXP B.V. 2010. All rights reserved.
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BLF573; BLF573S
NXP Semiconductors
HF / VHF power LDMOS transistor
Earless flanged LDMOST ceramic package; 2 leads
SOT502B
D
A
F
3
D
D1
c
U1
1
L
H
E1
U2
E
2
w2 M D M
b
0
5
Q
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
4.72
3.43
12.83
12.57
0.15
0.08
inches
0.186
0.135
0.505 0.006
0.495 0.003
OUTLINE
VERSION
E
E1
F
H
L
Q
U1
U2
w2
20.02 19.96
19.61 19.66
9.50
9.30
9.53
9.25
1.14
0.89
19.94
18.92
5.33
4.32
1.70
1.45
20.70
20.45
9.91
9.65
0.25
0.788 0.786
0.772 0.774
0.374 0.375
0.366 0.364
0.045 0.785
0.035 0.745
0.210
0.170
0.067 0.815
0.057 0.805
D
D1
REFERENCES
IEC
JEDEC
JEITA
0.390
0.010
0.380
EUROPEAN
PROJECTION
ISSUE DATE
03-01-10
07-05-09
SOT502B
Fig 12. Package outline SOT502B
BLF573_BLF573S
Product data sheet
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HF / VHF power LDMOS transistor
10. Abbreviations
Table 10.
Abbreviations
Acronym
Description
CW
Continuous Wave
EDGE
Enhanced Data rates for GSM Evolution
GSM
Global System for Mobile communications
HF
High Frequency
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
LDMOST
Laterally Diffused Metal-Oxide Semiconductor Transistor
RF
Radio Frequency
SMD
Surface Mount Device
TTF
Time To Failure
VHF
Very High Frequency
VSWR
Voltage Standing-Wave Ratio
11. Revision history
Table 11.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLF573_BLF573S v.3
20100708
Product data sheet
-
BLF573S v.2
Modifications:
•
The document now describes both the eared and earless version of this product:
BLF573 and BLF573S respectively.
BLF573S v.2
20090217
Product data sheet
-
BLF573S v.1
BLF573S v.1
20081208
Preliminary data sheet
-
-
BLF573_BLF573S
Product data sheet
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HF / VHF power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
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data sheet shall define the specification of the product as agreed between
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customer have explicitly agreed otherwise in writing. In no event however,
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malfunction of an NXP Semiconductors product can reasonably be expected
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Customers are responsible for the design and operation of their applications
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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products are sold subject to the general terms and conditions of commercial
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safety-critical systems or equipment, nor in applications where failure or
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
BLF573_BLF573S
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 8 July 2010
© NXP B.V. 2010. All rights reserved.
14 of 16
BLF573; BLF573S
NXP Semiconductors
HF / VHF power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BLF573_BLF573S
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 8 July 2010
© NXP B.V. 2010. All rights reserved.
15 of 16
BLF573; BLF573S
NXP Semiconductors
HF / VHF power LDMOS transistor
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
6.1
7
7.1
7.2
8
8.1
8.1.1
8.1.2
8.2
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 4
Application information. . . . . . . . . . . . . . . . . . . 4
Impedance information . . . . . . . . . . . . . . . . . . . 4
Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6
RF Performance . . . . . . . . . . . . . . . . . . . . . . . . 6
1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Contact information. . . . . . . . . . . . . . . . . . . . . 15
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 8 July 2010
Document identifier: BLF573_BLF573S
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