BLF578 1. Product profile Power LDMOS transistor

BLF578 1. Product profile Power LDMOS transistor
BLF578
Power LDMOS transistor
Rev. 02 — 4 February 2010
Product data sheet
1. Product profile
1.1 General description
A 1200 W LDMOS power transistor for broadcast applications and industrial applications
in the HF to 500 MHz band.
Table 1.
Application information
f
VDS
PL
Gp
ηD
(MHz)
(V)
(W)
(dB)
(%)
CW
108
50
1000
26
75
pulsed RF
225
50
1200
24
71
Mode of operation
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
„ Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an
IDq of 40 mA, a tp of 100 μs with δ of 20 %:
‹ Output power = 1200 W
‹ Power gain = 24 dB
‹ Efficiency = 71 %
„ Easy power control
„ Integrated ESD protection
„ Excellent ruggedness
„ High efficiency
„ Excellent thermal stability
„ Designed for broadband operation (10 MHz to 500 MHz)
„ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
„ Industrial, scientific and medical applications
„ Broadcast transmitter applications
BLF578
NXP Semiconductors
Power LDMOS transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
1
drain1
2
drain2
3
gate1
4
gate2
5
Simplified outline
1
Graphic symbol
1
2
5
3
3
4
5
4
[1]
source
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
BLF578
Package
Name
Description
Version
-
flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads
SOT539A
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VDS
Conditions
Min
Max
Unit
drain-source voltage
-
110
V
VGS
gate-source voltage
−0.5
+11
V
ID
drain current
-
88
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
225
°C
BLF578_2
Product data sheet
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BLF578
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5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Rth(j-c)
Zth(j-c)
Parameter
Conditions
thermal resistance from junction to case
Tj = 150 °C
transient thermal impedance from junction to case
Tj = 150 °C; tp = 100 μs; δ = 20 %
[1]
Tj is the junction temperature.
[2]
Rth(j-c) is measured under RF conditions.
[3]
See Figure 1.
Typ
Unit
[1][2]
0.14
K/W
[3]
0.04
K/W
001aak924
0.18
Zth(j-c)
(K/W)
(7)
0.12
(6)
0.06
(5)
(3)
(4)
(2)
(1)
0
10−7
10−6
10−5
10−4
10−3
10−2
10−1
1
10
tp (s)
(1) δ = 1 %
(2) δ = 2 %
(3) δ = 5 %
(4) δ = 10 %
(5) δ = 20 %
(6) δ = 50 %
(7) δ = 100 % (DC)
Fig 1.
Transient thermal impedance from junction to case as function of pulse duration
6. Characteristics
Table 6.
DC characteristics
Tj = 25 °C; per section unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown
voltage
VGS = 0 V; ID = 2.5 mA
110
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 500 mA
1.25
1.7
2.25
V
VGSq
gate-source quiescent voltage
VDS = 50 V; ID = 20 mA
0.8
1.3
1.8
V
IDSS
drain leakage current
VGS = 0 V; VDS = 50 V
-
-
2.8
μA
BLF578_2
Product data sheet
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Rev. 02 — 4 February 2010
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BLF578
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Power LDMOS transistor
Table 6.
DC characteristics …continued
Tj = 25 °C; per section unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
58
70
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
280
nA
RDS(on)
drain-source on-state
resistance
VGS = VGS(th) + 3.75 V;
ID = 16.66 A
-
0.07
-
Ω
Crs
feedback capacitance
VGS = 0 V; VDS = 50 V;
f = 1 MHz
-
3
-
pF
Ciss
input capacitance
VGS = 0 V; VDS = 50 V;
f = 1 MHz
-
403
-
pF
Coss
output capacitance
VGS = 0 V; VDS = 50 V;
f = 1 MHz
-
138
-
pF
Table 7.
RF characteristics
Mode of operation: pulsed RF; tp = 100 μs; δ = 20 %; f = 225 MHz; RF performance at VDS = 50 V;
IDq = 40 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Gp
power gain
PL = 1200 W
23
24
25.4
dB
RLin
input return loss
PL = 1200 W
14
17.5
-
dB
ηD
drain efficiency
PL = 1200 W
68
71
-
%
001aaj113
900
Coss
(pF)
750
600
450
300
150
0
0
10
20
30
40
50
VDS (V)
VGS = 0 V; f = 1 MHz.
Fig 2.
Output capacitance as a function of drain-source voltage; typical values per
section
6.1 Ruggedness in class-AB operation
The BLF578 is capable of withstanding a load mismatch corresponding to VSWR = 13 : 1
through all phases under the following conditions: VDS = 50 V; IDq = 40 mA; PL = 1200 W
pulsed; f = 225 MHz.
BLF578_2
Product data sheet
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Rev. 02 — 4 February 2010
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BLF578
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Power LDMOS transistor
7. Application information
7.1 Reliability
001aaj114
105
Years
(1) (2) (3) (4) (5) (6)
104
103
102
(7) (8) (9) (10) (11)
10
1
0
4
8
12
16
20
Idc (A)
TTF (0.1 % failure fraction).
The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) × 1/ δ.
(1) Tj = 100 °C
(2) Tj = 110 °C
(3) Tj = 120 °C
(4) Tj = 130 °C
(5) Tj = 140 °C
(6) Tj = 150 °C
(7) Tj = 160 °C
(8) Tj = 170 °C
(9) Tj = 180 °C
(10) Tj = 190 °C
(11) Tj = 200 °C
Fig 3.
BLF578 electromigration (ID, total device)
BLF578_2
Product data sheet
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Power LDMOS transistor
8. Test information
8.1 Impedance information
Table 8.
Typical impedance
Simulated ZS and ZL test circuit impedances.
f
ZS
ZL
MHz
Ω
Ω
225
3.2 + j2.6
3.7 − j0.2
drain
ZL
gate
ZS
001aaf059
Fig 4.
Definition of transistor impedance
8.2 RF performance
The following figures are measured in a class-AB production test circuit.
8.2.1 1-Tone CW pulsed
001aak926
26
Gp
(dB)
80
ηD
(%)
Gp
24
001aak927
65
PL
(dBm)
64
ideal PL
60
63
(2)
ηD
62
22
(1)
40
61
20
PL
60
20
59
18
100
400
700
1000
58
0
1300
1600
PL (W)
34
36
38
40
Ps (dBm)
VDS = 50 V; IDq = 40 mA; f = 225 MHz; tp = 100 μs;
δ = 20 %.
VDS = 50 V; IDq = 40 mA; f = 225 MHz; tp = 100 μs;
δ = 20 %.
(1) PL(1dB) = 61.0 dBm (1260 W)
(2) PL(3dB) = 61.4 dBm (1400 W)
Fig 5.
Power gain and drain efficiency as function of
load power; typical values
Fig 6.
Load Power as function of source power;
typical values
BLF578_2
Product data sheet
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Rev. 02 — 4 February 2010
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BLF578
NXP Semiconductors
Power LDMOS transistor
001aak928
26
001aak929
80
ηD
(%)
Gp
(dB)
24
60
(1)
(2)
(3)
(4)
(4)
(3)
(2)
(1)
22
40
20
20
18
100
400
700
1000
0
100
1300
1600
PL (W)
VDS = 50 V; f = 225 MHz; tp = 100 μs; δ = 20 %.
400
700
(1) IDq = 0 mA
(2) IDq = 40 mA
(2) IDq = 40 mA
(3) IDq = 80 mA
(3) IDq = 80 mA
(4) IDq = 160 mA
(4) IDq = 160 mA
Power gain as a function of load power;
typical values
001aak931
26
Fig 8.
Drain efficiency as a function of load power;
typical values
001aak933
80
(1)
ηD
(%)
Gp
(dB)
24
60
22
40
(4)
(3)
1300
1600
PL (W)
VDS = 50 V; f = 225 MHz; tp = 100 μs; δ = 20 %.
(1) IDq = 0 mA
Fig 7.
1000
(2)
(3)
(4)
(5)
(5)
(2)
20
20
(1)
18
100
400
700
1000
1300
1600
PL (W)
IDq = 40 mA; f = 225 MHz; tp = 100 μs; δ = 20 %.
0
100
400
(1) VDS = 30 V
(2) VDS = 35 V
(2) VDS = 35 V
(3) VDS = 40 V
(3) VDS = 40 V
(4) VDS = 45 V
(4) VDS = 45 V
(5) VDS = 50 V
(5) VDS = 50 V
Power gain as a function of load power;
typical values
1300
1600
PL (W)
Fig 10. Drain efficiency as a function of load power;
typical values
BLF578_2
Product data sheet
1000
IDq = 40 mA; f = 225 MHz; tp = 100 μs; δ = 20 %.
(1) VDS = 30 V
Fig 9.
700
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Rev. 02 — 4 February 2010
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BLF578
NXP Semiconductors
Power LDMOS transistor
8.3 Test circuit
VDD
VGG
C25
C1
C11
C28
C2
R3
R1
R5
T2
L1
C13
input
50 Ω
C7
C5
L3
C9
L4
L6
L8
L5
L7
L9
L10
C17 C19
L11
C16 C18 C20
output
50 Ω
C21
C24
L12
C14
C10
C8
C6
C22
C23
C15
T1
R2
R6
R4
L2
C27
C3
C12
C26
C4
VDD
VGG
001aaj123
See Table 9 for a list of components.
Fig 11. Class-AB common-source production test circuit
C25
C11
T2
C1
C2
R1
R3
C7
C5
C9
C6
C13
C14
C21
C17 C19
C23
C10
C8
R4
C15
R2
C3
C4
T1
C28
L1
R5
C24
C16 C18 C20
C22
R6
L2
C27
C12
C26
001aaj124
See Table 9 for a list of components.
Fig 12. Component layout for class-AB production test circuit
BLF578_2
Product data sheet
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Rev. 02 — 4 February 2010
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BLF578
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Power LDMOS transistor
Table 9.
List of components
For production test circuit, see Figure 11 and Figure 12.
Printed-Circuit Board (PCB): Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization);
thickness copper plating = 35 μm.
Component
Description
Value
Remarks
C1, C2, C11, C12
multilayer ceramic chip capacitor
4.7 μF
TDK4532X7R1E475Mt020U
C2, C3, C27, C28
multilayer ceramic chip capacitor
100 nF
Murata X7R 250 V
C5, C7, C8, C21, C22
multilayer ceramic chip capacitor
1 nF
[1]
C6
multilayer ceramic chip capacitor
30 pF
[1]
C9, C10, C13, C15
multilayer ceramic chip capacitor
62 pF
[1]
C14
multilayer ceramic chip capacitor
36 pF
[1]
C16, C17
multilayer ceramic chip capacitor
24 pF
[1]
C18
multilayer ceramic chip capacitor
30 pF
[1]
C19
multilayer ceramic chip capacitor
27 pF
[1]
C20
multilayer ceramic chip capacitor
9.1 pF
[1]
C23
multilayer ceramic chip capacitor
13 pF
[1]
C24
multilayer ceramic chip capacitor
16 pF
[1]
C25, C26
electrolytic capacitor
220 μF; 63 V
L1, L2
3 turns 1 mm copper wire
D = 2 mm; length = 3 mm
L3, L12
stripline
-
(L × W) 15 mm × 2.4 mm
L4, L5, L10, L11
stripline
-
(L × W) 47 mm × 10 mm
L6, L7, L8, L9
stripline
-
(L × W) 8 mm × 15 mm
R1, R2
metal film resistor
2 Ω; 0.6 W
R3, R4
metal film resistor
20 Ω; 0.6 W
R5, R6
metal film resistor
1 Ω; 0.6 W
T1, T2
semi rigid coax
50 Ω; 58 mm
[1]
EZ-141-AL-TP-M17
American Technical Ceramics type 100B or capacitor of same quality.
BLF578_2
Product data sheet
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Rev. 02 — 4 February 2010
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BLF578
NXP Semiconductors
Power LDMOS transistor
9. Package outline
Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads
SOT539A
D
A
F
D1
U1
B
q
C
w2 M C M
H1
1
c
2
E1
p
H U2
5
L
3
A
E
w1 M A M B M
4
w3 M
b
Q
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
mm
4.7
4.2
inches
b
c
D
D1
e
E
E1
11.81 0.18 31.55 31.52
9.50
13.72
11.56 0.10 30.94 30.96
9.30
9.53
9.27
F
H
H1
L
1.75 17.12 25.53 3.48
1.50 16.10 25.27 2.97
p
Q
q
3.30
3.05
2.26
2.01
35.56
U1
U2
w1
41.28 10.29
0.25
41.02 10.03
w2
w3
0.51
0.25
0.185 0.465 0.007 1.242 1.241
0.374 0.375 0.069 0.674 1.005 0.137 0.130 0.089
1.625 0.405
1.400
0.010 0.020 0.010
0.540
0.165 0.455 0.004 1.218 1.219
0.366 0.365 0.059 0.634 0.995 0.117 0.120 0.079
1.615 0.395
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
00-03-03
10-02-02
SOT539A
Fig 13. Package outline SOT539A
BLF578_2
Product data sheet
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Rev. 02 — 4 February 2010
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BLF578
NXP Semiconductors
Power LDMOS transistor
10. Abbreviations
Table 10.
Abbreviations
Acronym
Description
CW
Continuous Wave
EDGE
Enhanced Data rates for GSM Evolution
GSM
Global System for Mobile communications
HF
High Frequency
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
LDMOST
Laterally Diffused Metal-Oxide Semiconductor Transistor
RF
Radio Frequency
TTF
Time To Failure
VSWR
Voltage Standing-Wave Ratio
11. Revision history
Table 11.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLF578_2
20100204
Product data sheet
-
BLF578_1
Modifications:
BLF578_1
•
•
•
•
•
•
•
•
•
•
Table 1 on page 1: added information for CW performance.
Section 1 on page 1: changed typical value of ηD.
Table 4 on page 2: changed maximum value of ID.
Table 5 on page 3: changed value of Rth(j-c).
Table 5 on page 3: added information about Zth(j-c).
Figure 1 on page 3: added figure.
Table 6 on page 3: added values vor VGSq.
Table 6 on page 3: changed typical value of IDSX.
Table 7 on page 4: changed some values.
Section 8.2.1 on page 6: changed some graphs.
20081211
Objective data sheet
BLF578_2
Product data sheet
-
-
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 4 February 2010
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Power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
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Limited warranty and liability — Information in this document is believed to
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Notwithstanding any damages that customer might incur for any reason
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malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
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therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on a weakness or default in the
customer application/use or the application/use of customer’s third party
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suitable and fit for the Application planned. Customer has to do all necessary
testing for the Application in order to avoid a default of the Application and the
product. NXP Semiconductors does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
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NXP Semiconductors accepts no liability for inclusion and/or use of
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In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
BLF578_2
Product data sheet
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BLF578
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Power LDMOS transistor
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
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Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
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Rev. 02 — 4 February 2010
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Power LDMOS transistor
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
6.1
7
7.1
8
8.1
8.2
8.2.1
8.3
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 4
Application information. . . . . . . . . . . . . . . . . . . 5
Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6
Impedance information . . . . . . . . . . . . . . . . . . . 6
RF performance . . . . . . . . . . . . . . . . . . . . . . . . 6
1-Tone CW pulsed . . . . . . . . . . . . . . . . . . . . . . 6
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 4 February 2010
Document identifier: BLF578_2
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