BLF6G21-10G 1. Product profile Power LDMOS transistor

BLF6G21-10G 1. Product profile Power LDMOS transistor
BLF6G21-10G
Power LDMOS transistor
Rev. 3 — 11 April 2013
Product data sheet
1. Product profile
1.1 General description
10 W LDMOS power transistor for base station applications at frequencies from
HF to 2200 MHz
Table 1.
Typical performance
IDq = 100 mA; Tcase = 25 C in a common source class-AB production test circuit.
Mode of operation
f
VDS
PL(AV)
Gp
D
ACPR
(MHz)
(V)
(W)
(dB)
(%)
(dBc)
2-carrier W-CDMA
2110 to 2170
28
0.7
18.5
15
50[1]
1-carrier W-CDMA
2110 to 2170
28
2
19.3
31
39[1]
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
 Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,
a supply voltage of 28 V and an IDq of 100 mA:
 Average output power = 0.7 W
 Gain = 18.5 dB
 Efficiency = 15 %
 ACPR = 50 dBc
 Typical 1-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,
a supply voltage of 28 V and an IDq of 100 mA:
 Average output power = 2 W
 Gain = 19.3 dB
 Efficiency = 31 %
 ACPR = 39 dBc
 Easy power control
 Integrated ESD protection
 Excellent ruggedness
 High efficiency
BLF6G21-10G
NXP Semiconductors
Power LDMOS transistor
 Excellent thermal stability
 No internal matching for broadband operation
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 RF power amplifiers for GSM, PHS, EDGE, CDMA and W-CDMA base stations and
multi carrier applications in the HF to 2200 MHz frequency range
 Broadcast drivers
2. Pinning information
Table 2.
Pinning
Pin
Description
1
drain
2
gate
3
source
Simplified outline
Graphic symbol
1
1
[1]
2
3
3
sym112
2
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
BLF6G21-10G
Package
Name
Description
Version
-
ceramic surface-mounted package; 2 leads
SOT538A
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
BLF6G21-10G
Product data sheet
Symbol
Parameter
VDS
Conditions
Min
Max
Unit
drain-source voltage
-
65
V
VGS
gate-source voltage
0.5
+13
V
Tstg
storage temperature
65
+150
C
Tj
junction temperature
-
225
C
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5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Conditions
Rth(j-case) thermal resistance from junction to case Tcase = 80 C; PL(AV) = 11 W
[1]
[1]
Typ
Unit
3.2
K/W
Thermal resistance is determined under specified RF operating conditions
6. Characteristics
Table 6.
Characteristics
Tj = 25 C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS
drain-source breakdown voltage
VGS = 0 V; ID = 0.5 mA
65
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 18 mA
1.4
1.9
2.4
V
IDSS
drain leakage current
VGS = 0 V; VDS = 28 V
-
-
1.5
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V; VDS = 10 V
-
3.1
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
150
nA
gfs
forward transconductance
VDS = 10 V; ID = 0.9 A
-
0.5
-
S
RDS(on)
drain-source on-state resistance
VGS = VGS(th) + 3.75 V; ID = 0.625 A
-
0.4
-

Crs
feedback capacitance
VGS = 0 V; VDS = 28 V; f = 1 MHz
-
0.5
-
pF
7. Application information
Table 7.
Application information
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP
test model 1; 1-64 PDPCH; f1 = 2112.5 MHz; f2 = 2117.5 MHz; f3 = 2162.5 MHz; f4 = 2167.5 MHz;
RF performance at VDS = 28 V; IDq = 100 mA; Tcase = 25 C; unless otherwise specified; in a
class-AB production test circuit.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Gp
power gain
PL(AV) = 0.7 W
-
18.5
-
dB
D
drain efficiency
PL(AV) = 0.7 W
-
15
-
%
ACPR
adjacent channel power ratio
PL(AV) = 0.7 W
-
50
-
dBc
Table 8.
Application information
Mode of operation: 1-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP
test model 1; 1-64 PDPCH; f1 = 2112.5 MHz; f2 = 2167.5 MHz; RF performance at VDS = 28 V;
IDq = 100 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Gp
power gain
PL(AV) = 2 W
17.3
19.3
-
dB
D
drain efficiency
PL(AV) = 2 W
29
31
-
%
ACPR
adjacent channel power ratio
PL(AV) = 2 W
-
39
36
dBc
7.1 Ruggedness in class-AB operation
The BLF6G21-10G is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V;
f = 2140 MHz at PL = 10 W.
BLF6G21-10G
Product data sheet
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Power LDMOS transistor
7.2 CW
001aal120
50
RLin
(dB)
40
(1)
30
20
(2)
(3)
10
0
0
4
8
12
16
PL (W)
VDS = 28 V; IDq = 100 mA.
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
Fig 1.
CW input return loss as a function of load power; typical values
001aal121
19.5
001aal122
80
ηD
(%)
Gp
(dB)
60
(1)
(2)
(3)
18.5
40
17.5
(1)
(2)
(3)
20
0
16.5
0
4
8
12
16
0
4
8
PL (W)
VDS = 28 V; IDq = 100 mA.
(1) f = 2.11 GHz
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
(3) f = 2.17 GHz
CW power gain as a function of load power;
typical values
BLF6G21-10G
Product data sheet
16
PL (W)
VDS = 28 V; IDq = 100 mA.
Fig 2.
12
Fig 3.
CW drain efficiency as a function of
load power; typical values
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Power LDMOS transistor
7.3 1-carrier W-CDMA
001aal123
50
RLin
(dB)
40
(1)
30
20
(2)
(3)
10
0
0
1
2
3
4
PL (W)
VDS = 28 V; IDq = 100 mA.
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
Fig 4.
1-carrier W-CDMA input return loss as a function of load power; typical values
001aal124
20.0
001aal125
50
ηD
(%)
Gp
(dB)
19.6
40
19.2
30
(1)
(2)
(3)
18.8
(1)
(2)
(3)
20
18.4
10
18.0
0
0
1
2
3
4
0
1
2
PL (W)
VDS = 28 V; IDq = 100 mA.
(1) f = 2.11 GHz
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
(3) f = 2.17 GHz
1-carrier W-CDMA power gain as a function of
load power; typical values
BLF6G21-10G
Product data sheet
4
PL (W)
VDS = 28 V; IDq = 100 mA.
Fig 5.
3
Fig 6.
1-carrier W-CDMA drain efficiency as a
function of load power; typical values
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Power LDMOS transistor
001aal126
−30
001aal127
−52
ACPR
(dBc)
ACPR
(dBc)
−40
−56
(3)
(2)
(1)
−50
−60
(3)
(2)
(1)
−60
0
1
2
3
−64
4
0
1
2
PL (W)
4
PL (W)
VDS = 28 V; IDq = 100 mA; carrier spacing 5 MHz.
VDS = 28 V; IDq = 100 mA; carrier spacing 10 MHz.
(1) f = 2.11 GHz
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
(3) f = 2.17 GHz
Fig 7.
3
1-carrier W-CDMA adjacent channel power
ratio as a function of load power;
typical values
Fig 8.
1-carrier W-CDMA adjacent channel power
ratio as a function of load power;
typical values
7.4 2-carrier W-CDMA
001aal128
40
RLin
(dB)
(1)
30
20
(2)
(3)
10
0
0
0.6
1.2
1.8
PL (W)
VDS = 28 V; IDq = 100 mA.
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
Fig 9.
BLF6G21-10G
Product data sheet
2-carrier W-CDMA input return loss as a function of load power; typical values
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Power LDMOS transistor
001aal129
20.0
001aal130
30
Gp
(dB)
ηD
(%)
19.6
20
19.2
(1)
(2)
(3)
18.8
(1)
(2)
(3)
10
18.4
18.0
0
0
0.6
1.2
1.8
0
0.6
1.2
PL (W)
1.8
PL (W)
VDS = 28 V; IDq = 100 mA.
VDS = 28 V; IDq = 100 mA.
(1) f = 2.11 GHz
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
(3) f = 2.17 GHz
Fig 10. 2-carrier W-CDMA power gain as a function of
load power; typical values
001aal131
−30
Fig 11. 2-carrier W-CDMA drain efficiency as a
function of load power; typical values
001aal132
−40
ACPR
(dBc)
ACPR
(dBc)
−45
−40
(3)
(2)
(1)
−50
(3)
(2)
(1)
−50
−55
−60
0
0.6
1.2
1.8
−60
0
PL (W)
1.8
VDS = 28 V; IDq = 100 mA; carrier spacing 10 MHz.
(1) f = 2.11 GHz
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
(3) f = 2.17 GHz
Fig 12. 2-carrier W-CDMA adjacent channel power
ratio as a function of load power;
typical values
Product data sheet
1.2
PL (W)
VDS = 28 V; IDq = 100 mA; carrier spacing 5 MHz.
BLF6G21-10G
0.6
Fig 13. 2-carrier W-CDMA adjacent channel power
ratio as a function of load power;
typical values
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Power LDMOS transistor
8. Package outline
Ceramic surface-mounted package; 2 leads
SOT538A
D
A
3
z2 (4×)
z4 (4×)
D1
D2
B
c
1
Lp
A
L
z1 (4×)
E2
H
E1
E
z3 (4×)
2
w1
b
a
B
Q
0
5 mm
2.5
scale
Dimensions (mm are the original dimensions)
Unit
A
b
c
D
D1
D2
E
E1
E2
H
L
max 2.34 1.35 0.23 5.16 4.65 5.16 4.14 3.63 4.14 7.49 2.03
nom
min 2.13 1.19 0.18 5.00 4.50 5.00 3.99 3.48 3.99 7.24 1.27
mm
Lp
Q
w1
1.02 0.1
z1
z2
z3
z4
θ
0.58 0.25 0.97 0.51
7°
0.43 0.18 0.81 0.00
0°
0.25
0.51 0.0
sot538a_po
Outline
version
References
IEC
JEDEC
JEITA
European
projection
Issue date
06-03-16
13-02-07
SOT538A
Fig 14. Package outline SOT538A
BLF6G21-10G
Product data sheet
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9. Abbreviations
Table 9.
Abbreviations
Acronym
Description
3GPP
Third Generation Partnership Project
CCDF
Complementary Cumulative Distribution Function
CDMA
Code Division Multiple Access
CW
Continuous Wave
DPCH
Dedicated Physical CHannel
EDGE
Enhanced Data rates for GSM Evolution
GSM
Global System for Mobile communications
HF
High Frequency
LDMOS
Laterally Diffused Metal Oxide Semiconductor
PAR
Peak-to-Average power Ratio
PDPCH
transmission Power of the Dedicated Physical CHannel
PHS
Personal Handy-phone System
RF
Radio Frequency
VSWR
Voltage Standing Wave Ratio
W-CDMA
Wideband Code Division Multiple Access
10. Revision history
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLF6G21-10G v.3
20130411
Product data sheet
-
BLF6G21-10G v.2
Modifications:
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•
•
Legal texts have been adapted to the new company name where appropriate.
Package outline drawings have been updated to the latest version.
BLF6G21-10G v.2
20091211
Product data sheet
-
BLF6G21-10G v.1
BLF6G21-10G v.1
20090511
Objective data sheet
-
-
BLF6G21-10G
Product data sheet
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11. Legal information
11.1
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
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customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
11.3
Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
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changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
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to the publication hereof.
BLF6G21-10G
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
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malfunction of an NXP Semiconductors product can reasonably be expected
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Applications — Applications that are described herein for any of these
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representation or warranty that such applications will be suitable for the
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Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
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customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
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purchase of NXP Semiconductors products by customer.
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may be subject to export control regulations. Export might require a prior
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Non-automotive qualified products — Unless this data sheet expressly
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the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
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standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
11.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
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13. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
7.3
7.4
8
9
10
11
11.1
11.2
11.3
11.4
12
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 3
CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
1-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 5
2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2013.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 11 April 2013
Document identifier: BLF6G21-10G
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