BLS6G2731-120; BLS6G2731S-120 1. Product profile

BLS6G2731-120; BLS6G2731S-120 1. Product profile
BLS6G2731-120;
BLS6G2731S-120
LDMOS S-band radar power transistor
Rev. 01 — 14 November 2008
Product data sheet
1. Product profile
1.1 General description
120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz
range.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 °C; tp = 100 µs; δ = 10 %; IDq = 100 mA; in a class-AB
production test circuit.
Mode of operation
pulsed RF
f
VDS
PL
Gp
ηD
tr
tf
(GHz)
(V)
(W)
(dB)
(%)
(ns)
(ns)
2.7 to 3.1
32
120
13.5
48
20
6
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
n Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage
of 32 V, an IDq of 100 mA, a tp of 100 µs with δ of 10 %:
u Output power = 120 W
u Power gain = 13.5 dB
u Efficiency = 48 %
n Easy power control
n Integrated ESD protection
n High flexibility with respect to pulse formats
n Excellent ruggedness
n High efficiency
n Excellent thermal stability
n Designed for broadband operation (2.7 GHz to 3.1 GHz)
n Internally matched for ease of use
n Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
BLS6G2731-120; BLS6G2731S-120
NXP Semiconductors
LDMOS S-band radar power transistor
1.3 Applications
n S-band power amplifiers for radar applications in the 2.7 GHz to 3.1 GHz frequency
range
2. Pinning information
Table 2.
Pinning
Pin
Description
Simplified outline
Graphic symbol
BLS6G2731-120 (SOT502A)
1
drain
2
gate
3
1
1
3
[1]
source
2
2
3
sym112
BLS6G2731S-120 (SOT502B)
1
drain
2
gate
3
1
1
3
[1]
source
2
2
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
BLS6G2731-120
Package
Name
Description
-
flanged LDMOST ceramic package; 2 mounting holes; SOT502A
2 leads
BLS6G2731S-120 -
Version
earless flanged LDMOST ceramic package; 2 leads
SOT502B
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Min
Max
Unit
VDS
drain-source voltage
-
60
V
VGS
gate-source voltage
−0.5
+13
V
ID
drain current
-
33
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
225
°C
BLS6G2731-120_6G2731S-120_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 14 November 2008
2 of 12
BLS6G2731-120; BLS6G2731S-120
NXP Semiconductors
LDMOS S-band radar power transistor
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Zth(j-mb)
transient thermal impedance from
junction to mounting base
Tcase = 85 °C; PL = 120 W
Unit
tp = 100 µs; δ = 10 %
0.23 K/W
tp = 200 µs; δ = 10 %
0.28 K/W
tp = 300 µs; δ = 10 %
0.32 K/W
tp = 100 µs; δ = 20 %
0.33 K/W
6. Characteristics
Table 6.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.6 mA
Min Typ
Max
Unit
60
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 180 mA
1.4
1.8
2.4
V
IDSS
drain leakage current
VGS = 0 V; VDS = 28 V
-
-
4.2
µA
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
27
33
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
450
nA
gfs
forward transconductance
VDS = 10 V; ID = 9 A
8.1
13
-
S
RDS(on)
drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 6.3 A
-
0.085 0.135 Ω
7. Application information
Table 7.
Application information
Mode of operation: pulsed RF; tp = 100 µs; δ = 10 %; RF performance at VDS = 32 V; IDq = 100 mA;
Tcase = 25 °C; unless otherwise specified, in a class-AB production circuit.
Symbol
Parameter
PL
output power
VCC
supply voltage
Gp
Min Typ
Max Unit
-
120
-
W
PL = 120 W
-
-
32
V
power gain
PL = 120 W
12
13.5 -
dB
RLin
input return loss
PL = 120 W
-
7
-
dB
PL(1dB)
output power at 1 dB gain compression
-
130
-
W
ηD
drain efficiency
PL = 120 W
40
48
-
%
Pdroop(pulse)
pulse droop power
PL = 120 W
-
0
0.5
dB
tr
rise time
PL = 120 W
-
20
50
ns
tf
fall time
PL = 120 W
-
6
50
ns
BLS6G2731-120_6G2731S-120_1
Product data sheet
Conditions
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 14 November 2008
3 of 12
NXP Semiconductors
BLS6G2731-120; BLS6G2731S-120
LDMOS S-band radar power transistor
Table 8.
Typical impedance
f
ZS
ZL
GHz
Ω
Ω
2.7
3.4 − j7.2
4.6 − j4.4
2.8
3.8 − j5.9
3.8 − j4.6
2.9
4.7 − j4.8
3.0 − j4.6
3.0
6.3 − j4.1
2.3 − j4.3
3.1
8.8 − j4.9
1.8 − j3.9
drain
ZL
gate
ZS
001aaf059
Fig 1.
Definition of transistor impedance
7.1 Ruggedness in class-AB operation
The BLS6G2731-120 and BLS6G2731S-120 are capable of withstanding a load
mismatch corresponding to VSWR = 5 : 1 through all phases under the following
conditions: VDS = 32 V; IDq = 100 mA; PL = 120 W; tp = 100 µs; δ = 10 %.
BLS6G2731-120_6G2731S-120_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 14 November 2008
4 of 12
BLS6G2731-120; BLS6G2731S-120
NXP Semiconductors
LDMOS S-band radar power transistor
7.2 Graphs
001aaj091
15
Gp
(dB)
001aaj092
15
Gp
(dB)
13
13
(1)
(3)
(2)
(1)
(3)
(2)
11
11
9
9
7
7
0
40
80
120
160
0
40
80
120
PL (W)
VDS = 32 V; IDq = 100 mA; tp = 300 µs; δ = 10 %.
VDS = 32 V; IDq = 100 mA; tp = 100 µs; δ = 20 %.
(1) f = 2.7 GHz
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
(3) f = 3.1 GHz
Fig 2. Power gain as a function of load power; typical
values
001aaj093
60
Fig 3. Power gain as a function of load power; typical
values
001aaj094
60
(1)
(1)
ηD
(%)
160
PL (W)
ηD
(%)
(2)
(2)
40
40
(3)
(3)
20
20
0
0
0
40
80
120
160
0
40
PL (W)
VDS = 32 V; IDq = 100 mA; tp = 300 µs; δ = 10 %.
160
VDS = 32 V; IDq = 100 mA; tp = 100 µs; δ = 20 %.
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
(3) f = 3.1 GHz
Fig 5. Drain efficiency as a function of load power;
typical values
BLS6G2731-120_6G2731S-120_1
Product data sheet
120
PL (W)
(1) f = 2.7 GHz
Fig 4. Drain efficiency as a function of load power;
typical values
80
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 14 November 2008
5 of 12
BLS6G2731-120; BLS6G2731S-120
NXP Semiconductors
LDMOS S-band radar power transistor
001aaj095
160
001aaj096
160
PL
(W)
PL
(W)
120
120
80
80
(1)
(3)
(2)
40
(1)
(3)
(2)
40
0
0
0
4
8
12
0
4
8
Pi (W)
VDS = 32 V; IDq = 100 mA; tp = 300 µs; δ = 10 %.
VDS = 32 V; IDq = 100 mA; tp = 100 µs; δ = 20 %.
(1) f = 2.7 GHz
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
(3) f = 3.1 GHz
Fig 6. Load power as a function of input power;
typical values
001aaj097
15
Gp
(dB)
Gp
13
ηD
11
Fig 7. Load power as a function of input power;
typical values
60
ηD
(%)
50
2.75
2.85
2.95
001aaj098
15
Gp
(dB)
Gp
13
30
3.05
3.15
f (GHz)
PL = 120 W; VDS = 32 V; IDq = 100 mA; tp = 300 µs;
δ = 10 %.
Fig 8. Power gain and drain efficiency as function of
frequency; typical values
ηD
(%)
50
11
40
9
2.65
2.75
2.85
2.95
30
3.05
3.15
f (GHz)
PL = 120 W; VDS = 32 V; IDq = 100 mA; tp = 100 µs;
δ = 20 %.
Fig 9. Power gain and drain efficiency as function of
frequency; typical values
BLS6G2731-120_6G2731S-120_1
Product data sheet
60
ηD
40
9
2.65
12
Pi (W)
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 14 November 2008
6 of 12
BLS6G2731-120; BLS6G2731S-120
NXP Semiconductors
LDMOS S-band radar power transistor
8. Test information
C3
C13
C8
C7
C5
C9
C6
C11
C12
C4
C10
R1
C1
C2
Rev3
001aaj099
Striplines are on a double copper-clad Duroid 6006 Printed-Circuit Board (PCB) with εr = 6.15 and thickness = 0.64 mm.
See Table 9 for list of components.
Fig 10. Component layout for 2700 MHz to 3100 MHz test circuit
Table 9.
List of components
See Figure 10.
Component
Description
Value
C1, C2
multilayer ceramic chip capacitor 24 pF
C3
multilayer ceramic chip capacitor 47 µF; 20 V
C4, C6, C9, C10
multilayer ceramic chip capacitor 33 pF
ATC 100A or equivalent
C5, C11
multilayer ceramic chip capacitor 1 nF
ATC 100A or equivalent
C7, C8
multilayer ceramic chip capacitor 100 pF
ATC 100B or equivalent
C12
electrolytic capacitor
C13
multilayer ceramic chip capacitor 10 µF; 35 V
R1
SMD resistor
ATC 100A or equivalent
47 µF; 63 V
56 Ω
BLS6G2731-120_6G2731S-120_1
Product data sheet
Remarks
SMD 0603
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 14 November 2008
7 of 12
BLS6G2731-120; BLS6G2731S-120
NXP Semiconductors
LDMOS S-band radar power transistor
9. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT502A
D
A
F
3
D1
U1
B
q
c
C
1
H
L
E1
p
U2
E
w1 M A M B M
A
2
w2 M C M
b
0
5
Q
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
4.72
3.43
12.83
12.57
0.15
0.08
inches
0.186
0.135
0.505 0.006
0.495 0.003
OUTLINE
VERSION
E
E1
F
H
L
p
Q
q
U1
U2
w1
w2
20.02 19.96
19.61 19.66
9.50
9.30
9.53
9.25
1.14
0.89
19.94
18.92
5.33
4.32
3.38
3.12
1.70
1.45
27.94
34.16
33.91
9.91
9.65
0.25
0.51
0.788 0.786
0.772 0.774
0.374 0.375
0.366 0.364
0.067
1.100
0.057
1.345
1.335
0.390
0.380
0.01
0.02
D
D1
0.045 0.785
0.035 0.745
0.210 0.133
0.170 0.123
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
99-12-28
03-01-10
SOT502A
Fig 11. Package outline SOT502A
BLS6G2731-120_6G2731S-120_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 14 November 2008
8 of 12
BLS6G2731-120; BLS6G2731S-120
NXP Semiconductors
LDMOS S-band radar power transistor
Earless flanged LDMOST ceramic package; 2 leads
SOT502B
D
A
F
3
D
D1
c
U1
1
L
H
E1
U2
E
2
w2 M D M
b
0
5
Q
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
4.72
3.43
12.83
12.57
0.15
0.08
inches
0.186
0.135
0.505 0.006
0.495 0.003
OUTLINE
VERSION
E
E1
F
H
L
Q
U1
U2
w2
20.02 19.96
19.61 19.66
9.50
9.30
9.53
9.25
1.14
0.89
19.94
18.92
5.33
4.32
1.70
1.45
20.70
20.45
9.91
9.65
0.25
0.788 0.786
0.772 0.774
0.374 0.375
0.366 0.364
0.045 0.785
0.035 0.745
0.210
0.170
0.067 0.815
0.057 0.805
D
D1
REFERENCES
IEC
JEDEC
JEITA
0.390
0.010
0.380
EUROPEAN
PROJECTION
ISSUE DATE
03-01-10
07-05-09
SOT502B
Fig 12. Package outline SOT502B
BLS6G2731-120_6G2731S-120_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 14 November 2008
9 of 12
NXP Semiconductors
BLS6G2731-120; BLS6G2731S-120
LDMOS S-band radar power transistor
10. Abbreviations
Table 10.
Abbreviations
Acronym
Description
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
LDMOST
Laterally Diffused Metal-Oxide Semiconductor Transistor
RF
Radio Frequency
S-band
Short wave Band
VSWR
Voltage Standing-Wave Ratio
11. Revision history
Table 11.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLS6G2731-120_6G2731S-120_1
20081114
Product data sheet
-
-
BLS6G2731-120_6G2731S-120_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 14 November 2008
10 of 12
NXP Semiconductors
BLS6G2731-120; BLS6G2731S-120
LDMOS S-band radar power transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BLS6G2731-120_6G2731S-120_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 14 November 2008
11 of 12
NXP Semiconductors
BLS6G2731-120; BLS6G2731S-120
LDMOS S-band radar power transistor
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation. . . . . . . . . . 4
Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 14 November 2008
Document identifier: BLS6G2731-120_6G2731S-120_1
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