AN10953 BLF645 10 MHz to 600 MHz 120 W amplifier Application note

AN10953 BLF645 10 MHz to 600 MHz 120 W amplifier Application note
AN10953
BLF645 10 MHz to 600 MHz 120 W amplifier
Rev. 1 — 3 March 2011
Application note
Document information
Info
Content
Keywords
BLF645, broadband
Abstract
The BLF645 is a 100 W, 32 V LDMOS RF power push-pull transistor for
broadcast transmitter and industrial applications from HF to 1.4 GHz. This
application note describes a broadband amplifier that delivers more than
100 W from 10 MHz to 600 MHz.
AN10953
NXP Semiconductors
BLF645 10 MHz to 600 MHz 120 W amplifier
Revision history
Rev
Date
Description
v.1
20110303
initial version
Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
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Application note
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BLF645 10 MHz to 600 MHz 120 W amplifier
1. Introduction
The BLF645 is a 100 W LDMOS RF power push-pull transistor for broadcast transmitter
and industrial applications in the HF to 1.4 GHz frequency range. This application note
describes a broadband amplifier which delivers more than 100 W from 10 MHz to
600 MHz.
019aaa994
Fig 1.
BLF645 10 MHz to 600 MHz amplifier
AN10953
Application note
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BLF645 10 MHz to 600 MHz 120 W amplifier
2. Test summary
The RF performance described in Section 3 may be summarized as follows:
Table 1.
AN10953
Application note
Summary of RF performance
Item
Performance
Specified frequency range
10 MHz to 512 MHz
Specified drain voltage
28 V
Quiescent drain current
1A
Input return loss
≥ 5 dB; 15 dB typical
Peak CW power
≥ 100 W; 120 W typical
Gain
≥ 22.5 dB
Gain flatness
1.8 dB
Efficiency at 100 W
≥ 50 %
Efficiency flatness at 100 W
12 %
IMD3 at 100 W PEP
−30 dBc typical
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BLF645 10 MHz to 600 MHz 120 W amplifier
3. RF Performance
3.1 1-Tone CW
019aaa995
200
PL(M)
(W)
160
(1)
120
(2)
80
40
0
102
10
103
f (MHz)
IDq = 1.0 A
(1) VDS = 32 V
(2) VDS = 28 V
Fig 2.
Peak output power at 3 dB compression as a function of frequency
019aaa996
30
Gp
(dB)
(1)
26
(2)
22
18
14
102
10
103
f (MHz)
VDS = 28 V; Pi = 10 dBm
(1) IDq = 4.0 A
(2) IDq = 1.0 A
Fig 3.
AN10953
Application note
Small-signal power gain as a function of frequency
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BLF645 10 MHz to 600 MHz 120 W amplifier
019aaa997
25
25
η
(%)
G
(dB)
(1)
(2)
23
20
21
15
(3)
(4)
19
10
17
5
15
0
103
102
10
f (MHz)
IDq = 1.0 A; PL = 10 W
(1) gain; VDS = 32 V
(2) gain; VDS = 28 V
(3) efficiency; VDS = 28 V
(4) efficiency; VDS = 32 V
Fig 4.
Gain and efficiency as a function of frequency
019aaa998
25
80
η
(%)
G
(dB)
23
70
(1)
(2)
21
60
19
50
(3)
(4)
17
15
40
30
103
102
10
f (MHz)
IDq = 1.0 A; PL = 100 W
(1) gain; VDS = 32 V
(2) gain; VDS = 28 V
(3) efficiency; VDS = 28 V
(4) efficiency; VDS = 32 V
Fig 5.
AN10953
Application note
Gain and efficiency as a function of frequency
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NXP Semiconductors
BLF645 10 MHz to 600 MHz 120 W amplifier
019aaa999
24
70
η
(%)
G
(dB)
(1)
(2)
(3)
22
50
20
30
(4)
(5)
(6)
18
0
40
80
10
160
120
PL (W)
VDS = 28 V; IDq = 1.0 A
(1) gain; f = 20 MHz
(2) gain; f = 100 MHz
(3) gain; f = 500 MHz
(4) efficiency; f = 20 MHz
(5) efficiency; f = 100 MHz
(6) efficiency; f = 500 MHz
Fig 6.
AN10953
Application note
Gain and drain efficiency as a function of output power
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BLF645 10 MHz to 600 MHz 120 W amplifier
019aab000
24
70
η
(%)
G
(dB)
(1)
(2)
(3)
22
50
20
30
(4)
(5)
(6)
18
0
40
80
120
10
200
160
PL (W)
VDS = 32 V; IDq = 1.0 A
(1) gain; f = 20 MHz
(2) gain; f = 100 MHz
(3) gain; f = 500 MHz
(4) efficiency; f = 20 MHz
(5) efficiency; f = 100 MHz
(6) efficiency; f = 500 MHz
Fig 7.
Gain and drain efficiency as a function of output power
019aab001
0
IRL
(dB)
−5
−10
−15
−20
−25
102
10
103
f (MHz)
VDS = 28 V; Pi = 10 dBm; IDq = 1.0 A
Fig 8.
AN10953
Application note
Input return loss as a function of frequency
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BLF645 10 MHz to 600 MHz 120 W amplifier
019aab002
0
(2)
IMD
(dBc)
−20
(3)
−40
(1)
−60
−80
102
10
103
f (MHz)
VDS = 50 V; Pi = 10 dBm; IDq = 0.9 A; PL = 100 W
(1) 2nd harmonic level
(2) 3rd harmonic level
(3) system test floor
Fig 9.
2nd and 3rd harmonic levels
Note that the measured 2nd harmonic levels are at the system test limit, so the actual
levels may be significantly lower.
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BLF645 10 MHz to 600 MHz 120 W amplifier
3.2 2-Tone CW
019aab003
24
70
η
(%)
G
(dB)
(1)
(2)
(3)
22
50
(4)
(5)
(6)
20
30
18
0
40
80
120
10
200
160
PL (W)
VD = 28 V; IDq = 1.0 A; Δf = 100 kHz
(1) gain; f = 20 MHz
(2) gain; f = 100 MHz
(3) gain; f = 500 MHz
(4) efficiency; f = 20 MHz
(5) efficiency; f = 100 MHz
(6) efficiency; f = 500 MHz
Fig 10. 2-tone power gain and efficiency as a function of output power
AN10953
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BLF645 10 MHz to 600 MHz 120 W amplifier
019aab004
0
IMD3
(dBc)
−20
(7)
(8)
(9)
(4)
(5)
(6)
−40
(1)
(2)
(3)
−60
38
42
46
50
54
PL (dBm)
VD = 28 V; Δf = 100 kHz
(1) IDq = 1.0 A; f = 20 MHz
(2) IDq = 1.0 A; f = 100 MHz
(3) IDq = 1.0 A; f = 500 MHz
(4) IDq = 2.0 A; f = 20 MHz
(5) IDq = 2.0 A; f = 100 MHz
(6) IDq = 2.0 A; f = 500 MHz
(7) IDq = 4.0 A; f = 20 MHz
(8) IDq = 4.0 A; f = 100 MHz
(9) IDq = 4.0 A; f = 500 MHz
Fig 11. 3rd order intermodulation distortion as a function of output power
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BLF645 10 MHz to 600 MHz 120 W amplifier
3.3 Alternative input matching
It is possible to improve input return loss at high frequencies by matching the input with a
9:1 transformer constructed with 18 Ω cable, as illustrated in Figure 12. However, this has
the undesired effect of reducing gain flatness and low-frequency gain, so it was not used
in the design described in this application note.
019aab005
Fig 12. 9:1 input transformer
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AN10953
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BLF645 10 MHz to 600 MHz 120 W amplifier
019aab006
0
IRL
(dB)
−5
(1)
−10
−15
(2)
−20
−25
102
10
103
f (MHz)
VD = 28 V; IDq= 1.0 A; Pi = 10 dBm
(1) 9:1 input transformer
(2) 4:1 input transformer
Fig 13. Input return loss as a function of frequency
019aab007
28
G
(dB)
(2)
24
(1)
20
16
12
8
102
10
103
f (MHz)
VD = 28 V; IDq = 1.0 A; Pi = 10 dBm
(1) 9:1 input transformer
(2) 4:1 input transformer
Fig 14. Small-signal gain as a function of frequency
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BLF645 10 MHz to 600 MHz 120 W amplifier
C32
R115
C3
C5
C4
L101
C31
C30
C11
C105
C10
R2
L102
C12
R116
C102
U102
U101
U103
R117
C106
C103
R101
R114
D102
R103
R106
R102
R118
C108
C107
C104
D101
4. PCB information
R112
R4
R111
R108
R113
R015
E102
C20
T4
C33
E101
Q101
R109
C101
C104
T2
R1
L1
R110
C23
C1
C22
C24
C2
C25
T3
T6
R5
C7
C8
C9
R3
T1
T7
C21
019aab008
(1) PCB is Taconic RF35; εr = 3.5 F/m; height = 0.79 mm; Cu thickness = 35 μm
(2) T4, T6, and T7 cores are bonded to the baseplate with a thermally-conductive adhesive such as Wakefield DeltaBond 152
Fig 15. PCB layout
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BLF645 10 MHz to 600 MHz 120 W amplifier
4.1 RF circuit
T4, T6 Output 15 Ω 4:1 =
50 mm UT085-15 on 2861000202 core
T1 Input balun =
55 mm UT047 on 3 × 2843002402 core
T7 Output balun =
80 mm UT085 on 2 × 2861000202 core
T2, T3 Input 25 Ω 4:1 =
50 mm UT047-25 on 2 × 2843002402 core
C3
4.7 nF
C5
100 nF
R2
20 Ω
1210
C1
J1
NF
T1
T2
input 25 Ω 4:1
4.7 nF
3
C2
4
input
balun
4.7 nF
R4
C20
200 Ω
20 W
510 pF
C4
10 μF
C22
510 pF
T4
output 15 Ω 4:1
C23
J2
NF
T7
1 Q1
5 BLF645
4.7 nF
output
balun
C25
2
T3
input 25 Ω 4:1
R5
C21
200 Ω
20 W
510 pF
R1
10 Ω
0.5 W
R3
20 Ω
1210
C12
4.7 nF
C7
4.7 nF
4.7 nF
T6
output 15 Ω 4:1
C24
510 pF
R6
10 Ω
3W
VG
L1
8T
18 AWG
+28 V @ 10 A GND
TP1
TP2
VD
C10
10 μF
C12
100 nF
C9
100 nF
C8
10 μF
C31
4.7 nF
C32
100 nF
C30
10 μF
C33
470 μF
63 V
019aab009
Fig 16. RF schematic
Table 2.
AN10953
Application note
RF circuit bill of materials
Component
Description
Value
C1, C2, C3, C7, C11,
C23, C25, C31
capacitor, 100 V 5 % NP0, 1210
4.7 nF
Remarks
C4, C8, C10
capacitor, 10 V 10 % X7R, 1206
10 μF
C5, C9, C12
capacitor, 50 V 10 % X7R, 0805
100 nF
C20, C21, C22, C24
capacitor, 500 V 5 % NP0
510 pF ATC 100B
C30
capacitor, 100 V 10 % X7S, 2220
10 μF
C32
capacitor, 100 V 10 % X7R, 1210
100 nF
C33
capacitor, 63 V, alum electrolytic
470 μF
L1
8 turns 18AWG on R6
T1
55 mm UT-047 50 Ω coax +
(3) Fair-Rite 2861002402 core
input balun
T2, T3
50 mm UT-047 25 Ω coax +
(2) Fair-Rite 2861002402 core
4:1 input transformer
T4, T6
50 mm UT-085C-15 15 Ω coax +
Fair-Rite 2861000202 core
4:1 output transformer
T7
80 mm UT-085 50 Ω coax +
(2) Fair-Rite 2861000202 core
1:1 output balun
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Rev. 1 — 3 March 2011
TDK C5750X7S2A106M
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BLF645 10 MHz to 600 MHz 120 W amplifier
Table 2.
RF circuit bill of materials
Component
Description
Value
R1
resistor, 5 % CC, 0.5 W
10 Ω
R2, R3
resistor, 5 % 100 ppm CF, 2010
20 Ω
R4, R5
resistor, 5 % 20 W flange-mount
200 Ω
R6
resistor, 5 % 3 W MF
10 Ω
Remarks
ATC FR10300N0200J
4.2 Bias circuit
Table 3.
AN10953
Application note
Bias circuit bill of materials
Component
Description
Value
L101, L102
ferrite bead, 200 mA, 0805
1000 Ω
C101, C102
capacitor, 50 V 10 % X7R, 0805
100 nF
C105, C106, D102,
U102, R111, R112, R114,
E101, E102
not installed
Remarks
C103, C104, C107
capacitor, 50 V 10 % X7R, 0805
1 μF
C108
capacitor, 100 V 10 % X7R, 1210
2.2 μF
D101
LED, green, 1206
U101
voltage regulator
Linear LT3010EMS8E
Q101
transistor NPN 45 V 100 mA GP
NXP Semiconductors
BC847B
U103
rail-rail opamp
National LM7321MF
R106
potentiometer, 5 turns cermet
200 Ω
R113, R117, R118
resistor, 1% 100 ppm CF, 0805
10.0 kΩ
R104, R115
resistor, 1% 100 ppm CF, 0805
1.10 kΩ
R105
resistor, 1% 100 ppm CF, 0805
2 kΩ
R102, R103, R108
resistor, 1% 100 ppm CF, 0805
432 Ω
R116
resistor, 1% 100 ppm CF, 0805
52.3 kΩ
R109
resistor, 1% 100 ppm CF, 0805
5.11 kΩ
R101
resistor, 1% 100 ppm CF, 0805
0.0 Ω
R110
resistor, 1% 100 ppm CF, 0805
909 Ω
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BLF645 10 MHz to 600 MHz 120 W amplifier
VD
L101
BLM21BD102
U101
LT3010EMS8E
IN
R118
10.0 kΩ
C108
2.2 μF
EN
8
1
5
2
OUT
ADJ
R116
52.3 kΩ
C106
1 nF
C107
1 μF
R115
1.10 kΩ
GND: 4, 9
D101
HSMGC150
green = power
R117
10.0 kΩ
R103
R105
432 Ω
200 Ω
R102
432 Ω
R101
75.0 Ω
R104
1.10 kΩ
bias monitor/overdrive
E102
R105
2.00 kΩ
C101
100 nF
R108
R113
432 Ω
10.0 kΩ
C103
1 μF
U103
LM7321MF
3
5
C102 4
100 nF
2
VG
L102
BLM21BD102
1 VGATE
R109
5.11 kΩ
ground
E101
C104
1 μF
3
1
Q101
BC847B
R111
88.7 kΩ
2
R114
1.10 kΩ
3
5
R110
909 Ω
C105
100 nF
1
D102
HSMHC150
red = overtemp
400 mV
R112
10.0 kΩ
4
6
U102
2 LT6700CS63
019aab010
Fig 17. Bias circuit schematic diagram
5. Abbreviations
Table 4.
AN10953
Application note
Abbreviations
Acronym
Description
ACPR
Adjacent Channel Power Ratio
CCDF
Complementary Cumulative Distribution Function
DPD
Digital PreDistortion
IBW
Integration BandWidth
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
MOSFET
Metal Oxide Silicon Field Effect Transistor
PAR
Peak-to-Average power Ratio
W-CDMA
Wideband Code Division Multiple Access
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BLF645 10 MHz to 600 MHz 120 W amplifier
6. Legal information
6.1
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
6.2
Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
AN10953
Application note
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Evaluation products — This product is provided on an “as is” and “with all
faults” basis for evaluation purposes only. NXP Semiconductors, its affiliates
and their suppliers expressly disclaim all warranties, whether express, implied
or statutory, including but not limited to the implied warranties of
non-infringement, merchantability and fitness for a particular purpose. The
entire risk as to the quality, or arising out of the use or performance, of this
product remains with customer.
In no event shall NXP Semiconductors, its affiliates or their suppliers be liable
to customer for any special, indirect, consequential, punitive or incidental
damages (including without limitation damages for loss of business, business
interruption, loss of use, loss of data or information, and the like) arising out
the use of or inability to use the product, whether or not based on tort
(including negligence), strict liability, breach of contract, breach of warranty or
any other theory, even if advised of the possibility of such damages.
Notwithstanding any damages that customer might incur for any reason
whatsoever (including without limitation, all damages referenced above and
all direct or general damages), the entire liability of NXP Semiconductors, its
affiliates and their suppliers and customer’s exclusive remedy for all of the
foregoing shall be limited to actual damages incurred by customer based on
reasonable reliance up to the greater of the amount actually paid by customer
for the product or five dollars (US$5.00). The foregoing limitations, exclusions
and disclaimers shall apply to the maximum extent permitted by applicable
law, even if any remedy fails of its essential purpose.
6.3
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
All information provided in this document is subject to legal disclaimers.
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BLF645 10 MHz to 600 MHz 120 W amplifier
7. Contents
1
2
3
3.1
3.2
3.3
4
4.1
4.2
5
6
6.1
6.2
6.3
7
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Test summary. . . . . . . . . . . . . . . . . . . . . . . . . . . 4
RF Performance . . . . . . . . . . . . . . . . . . . . . . . . . 5
1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Alternative input matching . . . . . . . . . . . . . . . 12
PCB information. . . . . . . . . . . . . . . . . . . . . . . . 14
RF circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Bias circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Legal information. . . . . . . . . . . . . . . . . . . . . . . 18
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 3 March 2011
Document identifier: AN10953
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