BLF645 1. Product profile Broadband power LDMOS transistor

BLF645 1. Product profile Broadband power LDMOS transistor
BLF645
Broadband power LDMOS transistor
Rev. 01 — 27 January 2010
Product data sheet
1. Product profile
1.1 General description
A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial
applications. The transistor is suitable for the frequency range HF to 1400 MHz. The
excellent ruggedness and broadband performance of this device makes it ideal for digital
applications.
Table 1.
Typical performance
RF performance at Th = 25 °C in a common source test circuit.
Mode of operation
f
VDS
PL
PL(PEP)
Gp
ηD
IMD
(MHz)
(V)
(W)
(W)
(dB)
(%)
(dBc)
CW, class-AB
1300
32
100
-
18
56
-
2-tone, class-AB
1300
32
-
100
18
45
−32
1.2 Features
„ CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent
drain current IDq = 0.9 A for total device:
‹ Average output power = 100 W
‹ Power gain = 18 dB
‹ Drain efficiency = 56 %
„ 2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent
drain current IDq = 0.9 A for total device:
‹ Peak envelope load power = 100 W
‹ Power gain = 18 dB
‹ Drain efficiency = 45 %
‹ Intermodulation distortion = −32 dBc
„ Integrated ESD protection
„ Excellent ruggedness
„ High power gain
„ High efficiency
„ Excellent reliability
„ Easy power control
„ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLF645
NXP Semiconductors
Broadband power LDMOS transistor
1.3 Applications
„ Communication transmitter applications in the HF to 1400 MHz frequency range
„ Industrial applications in the HF to 1400 MHz frequency range
2. Pinning information
Table 2.
Pinning
Pin
Description
1
drain 1
2
drain 2
3
gate 1
4
gate2
5
source
Simplified outline
1
Graphic symbol
1
2
5
3
3
5
4
4
[1]
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
BLF645
Package
Name
Description
Version
-
flanged balanced LDMOST ceramic package; 2
mounting holes; 4 leads
SOT540A
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VDS
Conditions
Min
Max
Unit
drain-source voltage
-
65
V
VGS
gate-source voltage
−0.5
+11
V
ID
drain current
-
32
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
200
°C
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Rth(j-c)
[1]
Conditions
thermal resistance from junction to case
Tcase = 80 °C; PL = 100 W
Unit
0.67 K/W
Rth(j-c) is measured under RF conditions.
BLF645_1
Product data sheet
Typ
[1]
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BLF645
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Broadband power LDMOS transistor
6. Characteristics
Table 6.
Characteristics per section
Tj = 25 °C per section; unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
V(BR)DSS drain-source breakdown voltage
VGS = 0 V; ID = 0.9 mA
65
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 32 V; ID = 90 mA
1.4
1.9
2.4
V
VGSq
gate-source quiescent voltage
VDS = 32 V; IDq = 450 mA
1.5
2.0
2.5
V
IDSS
drain leakage current
VGS = 0 V; VDS = 32 V
-
-
1.4
μA
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
-
14
-
A
IGSS
gate leakage current
VGS = ±10 V; VDS = 0 V
-
-
120
nA
gfs
forward transconductance
VDS = 10 V; ID = 4.5 A
-
6.4
-
S
RDS(on)
drain-source on-state resistance
VGS = VGS(th) + 3.75 V;
ID = 3.15 A
-
220
-
mΩ
Ciss
input capacitance
VGS = 0 V; VDS = 32 V;
f = 1 MHz
-
69
-
pF
Coss
output capacitance
VGS = 0 V; VDS = 32 V;
f = 1 MHz
-
25
-
pF
Crs
feedback capacitance
VGS = 0 V; VDS = 32 V;
f = 1 MHz
-
1.2
-
pF
7. Application information
Table 7.
RF performance in a common-source class-AB circuit
Th = 25 °C; IDq = 0.9 A for total device.
Mode of operation
CW, class-AB
f
VDS
PL
Gp
ηD
(MHz)
(V)
(W)
(dB)
(%)
1300
32
100
> 16.5
> 53
7.1 Ruggedness in class-AB operation
The BLF645 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1
through all phases under the following conditions: VDS = 32 V; f = 1300 MHz at rated load
power.
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Product data sheet
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BLF645
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Broadband power LDMOS transistor
8. Test information
8.1 RF performance
The following figures are measured in a class-AB production test circuit.
8.1.1 1-Tone CW
001aal361
20
Gp
(dB)
Gp
19
70
ηD
(%)
Gp
(dB)
60
001aal362
20
19
18
18
(7)
(6)
(5)
(4)
(3)
(2)
(1)
50
ηD
17
17
40
16
30
15
20
14
10
16
15
13
0
40
80
14
13
12
0
160
120
0
40
80
120
160
PL (W)
PL (W)
VDS = 32 V; IDq = 900 mA (for total device);
f = 1300 MHz.
VDS = 32 V; f = 1300 MHz.
(1) IDq = 200 mA (for total device).
(2) IDq = 400 mA (for total device).
(3) IDq = 600 mA (for total device).
(4) IDq = 900 mA (for total device).
(5) IDq = 1200 mA (for total device).
(6) IDq = 1400 mA (for total device).
(7) IDq = 1800 mA (for total device).
Fig 1.
Power gain and drain efficiency as function of
load power; typical values
Fig 2.
Power gain as a function of load power;
typical values
BLF645_1
Product data sheet
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Rev. 01 — 27 January 2010
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BLF645
NXP Semiconductors
Broadband power LDMOS transistor
001aal363
55
PL
(dBm)
ideal PL
53
(2)
(1)
51
PL
49
47
45
27
29
31
33
35
37
Pi (dBm)
VDS = 32 V; IDq = 900 mA (for total device); f = 1300 MHz.
(1) PL(1dB) = 50.5 dBm (112 W).
(2) PL(3dB) = 51.5 dBm (141 W).
Fig 3.
Load power as function of input power; typical values
BLF645_1
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 01 — 27 January 2010
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BLF645
NXP Semiconductors
Broadband power LDMOS transistor
8.1.2 2-Tone CW
001aal364
20
ηD
(%)
Gp
(dB)
19
001aal365
0
60
IMD3
(dBc)
50
−10
40
−20
30
−30
Gp
18
ηD
17
16
20
−40
15
10
−50
14
0
40
80
0
120
160
PL(PEP) (W)
VDS = 32 V; IDq = 900 mA (for total device);
f = 1300 MHz; carrier spacing = 100 kHz.
−60
(1)
(2)
(3)
(4)
(5)
(6)
(7)
0
40
80
120
160
200
PL(PEP) (W)
VDS = 32 V; f = 1300 MHz; carrier spacing = 100 kHz.
(1) IDq = 200 mA (for total device).
(2) IDq = 400 mA (for total device).
(3) IDq = 600 mA (for total device).
(4) IDq = 900 mA (for total device).
(5) IDq = 1200 mA (for total device).
(6) IDq = 1400 mA (for total device).
(7) IDq = 1800 mA (for total device).
Fig 4.
Power gain and drain efficiency as function of
peak envelope load power; typical values
Fig 5.
Third order intermodulation distortion as a
function of peak envelope load power; typical
values
BLF645_1
Product data sheet
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Rev. 01 — 27 January 2010
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BLF645
NXP Semiconductors
Broadband power LDMOS transistor
8.2 Reliability
001aal366
105
Years
(1)
(2)
(3)
(4)
(5)
(6)
104
103
102
(7)
(8)
(9)
(10)
(11)
10
1
0
4
8
12
16
20
IDS(DC) (A)
TTF (0.1 % failure fraction).
(1) Tj = 100 °C.
(2) Tj = 110 °C.
(3) Tj = 120 °C.
(4) Tj = 130 °C.
(5) Tj = 140 °C.
(6) Tj = 150 °C.
(7) Tj = 160 °C.
(8) Tj = 170 °C.
(9) Tj = 180 °C.
(10) Tj = 190 °C.
(11) Tj = 200 °C.
Fig 6.
BLF645 electromigration (IDS(DC), total device)
BLF645_1
Product data sheet
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Rev. 01 — 27 January 2010
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BLF645
NXP Semiconductors
Broadband power LDMOS transistor
8.3 Test circuit
VDD
C15
VGG
C13
C4
R3
T2
C2
IN
50 Ω C1
R1
L6
C6
C8
L3
L4
L8
C9
L1
L10
L12
C10
L14
C17
OUT
50 Ω
L13
L5
C7
R2
R5
C11
L7
L9
L11
C12
C3
R4
L2
R6
T1
C5
C14
VGG
C16
VDD
001aal367
See Table 8 for a list of components.
Fig 7.
Class-AB common-source production test circuit
+
C4
C15
C13
R3
T2
R5
C2
C1
C6
R1
C9
C8
C3
L1
C11
C17
C10
R2
C7
C12
L2
R6
T1
C14
R4
C5
BLF645 INPUT REVZ
NXP
BLF645 OUTPUT REVZ
NXP
+
C16
001aal368
See Table 8 for a list of components.
Fig 8.
Component layout for class-AB production test circuit
BLF645_1
Product data sheet
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Rev. 01 — 27 January 2010
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BLF645
NXP Semiconductors
Broadband power LDMOS transistor
Table 8.
List of components
For test circuit, see Figure 7 and Figure 8.
Component
Description
Value
Remarks
multilayer ceramic chip capacitor
47 pF
[1]
C6, C7, C11, C12, multilayer ceramic chip capacitor
C17
27 pF
[2]
C2, C3
multilayer ceramic chip capacitor
100 nF
Murata X7R or equivalent
C4, C5, C13, C14 multilayer ceramic chip capacitor
4.7 μF
TDK C4532X7R1E475MT020U or
capacitor of same quality.
C8
multilayer ceramic chip capacitor
1.5 pF
[2]
C9
multilayer ceramic chip capacitor
3.3 pF
[2]
C10
multilayer ceramic chip capacitor
6.2 pF
[3]
C15, C16
electrolytic capacitor
220 μF
L1, L2
4 turns, 0.8 mm enameled copper wire
D = 3.5 mm;
length = 4 mm
L3
microstrip
-
[4]
(W × L) 1.67 mm × 19.17 mm
-
[4]
(W × L) 1.9 mm × 23.7 mm
-
[4]
(W × L) 9.6 mm × 17.3 mm
(W × L) 9 mm 12 mm
C1
L4, L5
L6, L7
microstrip
microstrip
TDK C4532X7R1E475MT020U or
capacitor of same quality.
L8, L9
microstrip
-
[4]
L10, L11
microstrip
-
[4]
(W × L) 8.5 mm × 31.0 mm
-
[4]
(W × L) 4.52 mm × 5.0 mm
[4]
(W × L) 1.67 mm × 21.67 mm
L12, L13
microstrip
L14
microstrip
-
R1, R2
SMD resistor
11 Ω
1206
R3, R4
SMD resistor
1 kΩ
1206
R5, R6
SMD resistor
12 Ω
1206
T1, T2
semi rigid coax
Z = 50 Ω;
length = 34 mm
[1]
American technical ceramics type 100A or capacitor of same quality.
[2]
American technical ceramics type 100B or capacitor of same quality.
[3]
American technical ceramics type 180R or capacitor of same quality.
[4]
Printed-Circuit Board (PCB): Taconic RF35; εr = 3.5 F/m; height = 0.79 mm; Cu (top/bottom metallization);
thickness copper plating = 35 μm.
BLF645_1
Product data sheet
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Rev. 01 — 27 January 2010
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BLF645
NXP Semiconductors
Broadband power LDMOS transistor
9. Package outline
Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads
SOT540A
D
A
F
D1
U1
B
q
C
w2 M C M
H1
1
H
c
2
E1
p
U2
5
3
A
E
w1 M A M B M
4
w3 M
b
Q
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
5.77
5.00
8.51
8.26
0.15
0.10
inches
D
D1
e
E
E1
10.26 10.31
22.05 22.05
10.21
10.06 10.01
21.64 21.64
H
F
1.78
1.52
H1
15.75 18.72
14.73 18.47
p
Q
q
U1
U2
w1
w2
w3
3.38
3.12
2.72
2.46
27.94
34.16
33.91
9.91
9.65
0.25
0.51
0.25
0.227 0.335 0.006 0.868 0.868
0.404 0.406 0.070 0.620 0.737 0.133 0.107
1.345 0.390
1.100
0.010 0.020 0.010
0.402
0.197 0.325 0.004 0.852 0.852
0.396 0.394 0.060 0.580 0.727 0.123 0.097
1.335 0.380
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
99-08-27
99-12-28
SOT540A
Fig 9. Package outline SOT540A
BLF645_1
Product data sheet
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Rev. 01 — 27 January 2010
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BLF645
NXP Semiconductors
Broadband power LDMOS transistor
10. Abbreviations
Table 9.
Abbreviations
Acronym
Description
CW
Continuous Waveform
DC
Direct Current
D-MOS
Diffusion Metal-Oxide Semiconductor
ESD
ElectroStatic Discharge
HF
High Frequency
LDMOS
Laterally Diffused Metal Oxide Semiconductor
LDMOST
Laterally Diffused Metal-Oxide Semiconductor Transistor
RF
Radio Frequency
SMD
Surface-Mount Device
VSWR
Voltage Standing-Wave Ratio
11. Revision history
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLF645_1
20100127
Product data sheet
-
-
BLF645_1
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 01 — 27 January 2010
11 of 13
BLF645
NXP Semiconductors
Broadband power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BLF645_1
Product data sheet
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Rev. 01 — 27 January 2010
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BLF645
NXP Semiconductors
Broadband power LDMOS transistor
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
8
8.1
8.1.1
8.1.2
8.2
8.3
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 3
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 4
RF performance . . . . . . . . . . . . . . . . . . . . . . . . 4
1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 27 January 2010
Document identifier: BLF645_1
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