BLL6H1214-500; BLL6H1214LS-500 1. Product profile

BLL6H1214-500; BLL6H1214LS-500 1. Product profile
BLL6H1214-500;
BLL6H1214LS-500
LDMOS L-band radar power transistor
Rev. 3 — 5 August 2013
Product data sheet
1. Product profile
1.1 General description
500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to
1.4 GHz range.
Table 1.
Test information
Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 150 mA; in a class-AB
production test circuit.
Test signal
pulsed RF
f
VDS
PL
Gp
D
tr
tf
(GHz)
(V)
(W)
(dB)
(%)
(ns)
(ns)
1.2 to 1.4
50
500
17
50
20
6
1.2 Features and benefits









Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1.2 GHz to 1.4 GHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
 L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency
range
BLL6H1214-500; BLL6H1214LS-500
NXP Semiconductors
LDMOS L-band radar power transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
Simplified outline
Graphic symbol
BLL6H1214-500 (SOT539A)
1
drain1
2
drain2
3
gate1
4
gate2
5
1
1
2
5
3
3
4
5
4
[1]
source
2
sym117
BLL6H1214LS-500 (SOT539B)
1
drain1
2
drain2
3
gate1
4
gate2
5
source
1
2
1
5
3
3
4
5
4
[1]
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
Version
BLL6H1214-500
-
flanged balanced ceramic package; 2 mounting holes;
4 leads
SOT539A
BLL6H1214LS-500
-
earless flanged balanced ceramic package; 4 leads
SOT539B
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
BLL6H1214-500_1214LS-500
Product data sheet
Symbol
Parameter
VDS
Conditions
Min
Max
Unit
drain-source voltage
-
100
V
VGS
gate-source voltage
0.5
+13
V
Tstg
storage temperature
65
+150
C
Tj
junction temperature
-
200
C
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 5 August 2013
© NXP B.V. 2013. All rights reserved.
2 of 21
NXP Semiconductors
BLL6H1214-500; BLL6H1214LS-500
LDMOS L-band radar power transistor
5. Thermal characteristics
Table 5.
Symbol
Thermal characteristics
Parameter
Conditions
Typ
Unit
BLL6H1214-500
Zth(j-c)
Tcase = 85 C; PL = 500 W
transient thermal impedance from
junction to case
tp = 100 s;  = 10 %
0.07
K/W
tp = 200 s;  = 10 %
0.08
K/W
tp = 300 s;  = 10 %
0.1
K/W
tp = 100 s;  = 20 %
0.1
K/W
BLL6H1214LS-500
Zth(j-c)
Tcase = 85 C; PL = 500 W
transient thermal impedance from
junction to case
tp = 100 s;  = 10 %
0.046 K/W
tp = 200 s;  = 10 %
0.059 K/W
tp = 300 s;  = 10 %
0.069 K/W
tp = 100 s;  = 20 %
0.064 K/W
6. Characteristics
Table 6.
DC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.7 mA
Min
Typ
Max Unit
100
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 270 mA
1.3
1.8
2.2
V
IDSS
drain leakage current
VGS = 0 V; VDS = 50 V
-
-
1.4
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
32
42
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
140
nA
gfs
forward transconductance
VDS = 10 V; ID = 270 mA
1.7
3
-
S
RDS(on)
drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 9.5 A
-
100
164
m
Table 7.
RF characteristics
Test signal: pulsed RF; tp = 300 s;  = 10 %; RF performance at VDS = 50 V; IDq = 150 mA;
Tcase = 25 C; unless otherwise specified, in a class-AB production test circuit.
BLL6H1214-500_1214LS-500
Product data sheet
Symbol
Parameter
PL
output power
Conditions
VDS
drain-source voltage
Gp
Min Typ Max Unit
500
-
-
W
PL = 500 W
-
-
50
V
power gain
PL = 500 W
15
17
-
dB
RLin
input return loss
PL = 500 W
-
10
-
dB
PL(1dB)
output power at 1 dB gain compression
-
600
-
W
D
drain efficiency
45
50
-
%
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 5 August 2013
PL = 500 W
© NXP B.V. 2013. All rights reserved.
3 of 21
BLL6H1214-500; BLL6H1214LS-500
NXP Semiconductors
LDMOS L-band radar power transistor
Table 7.
RF characteristics …continued
Test signal: pulsed RF; tp = 300 s;  = 10 %; RF performance at VDS = 50 V; IDq = 150 mA;
Tcase = 25 C; unless otherwise specified, in a class-AB production test circuit.
Symbol
Parameter
Conditions
Min Typ Max Unit
Pdroop(pulse)
pulse droop power
PL = 500 W
-
0
0.3
dB
tr
rise time
PL = 500 W
-
20
50
ns
tf
fall time
PL = 500 W
-
6
50
ns
7. Test information
7.1 Ruggedness in class-AB operation
The BLL6H1214-500 and BLL6H1214LS-500 are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: VDS = 50 V; IDq = 150 mA; PL = 500 W; tp = 300 s;  = 10 %.
7.2 Impedance information
Table 8.
Typical impedance
Typical values per section unless otherwise specified.
f
ZS
ZL
(GHz)
()
()
1.2
1.268  j2.623
2.987  j1.664
1.3
2.193  j2.457
2.162  j1.326
1.4
2.359  j2.052
1.604  j1.887
drain
ZL
gate
ZS
001aaf059
Fig 1.
Definition of transistor impedance
7.3 Test circuit
Table 9.
List of components
For test circuit see Figure 2.
Component
BLL6H1214-500_1214LS-500
Product data sheet
Description
Value
Remarks
C1
multilayer ceramic chip capacitor
22 F, 35 V
C2
multilayer ceramic chip capacitor
51 pF
[1]
C3, C4
multilayer ceramic chip capacitor
100 pF
[1]
C5, C11, C12
multilayer ceramic chip capacitor
1 nf
[2]
C6
multilayer ceramic chip capacitor
47 pF
[1]
C7, C8, C10
multilayer ceramic chip capacitor
51 pF
[3]
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Rev. 3 — 5 August 2013
© NXP B.V. 2013. All rights reserved.
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BLL6H1214-500; BLL6H1214LS-500
NXP Semiconductors
LDMOS L-band radar power transistor
Table 9.
List of components …continued
For test circuit see Figure 2.
Component
Description
Value
Remarks
[3]
C9
multilayer ceramic chip capacitor
100 pF
C13
electrolytic capacitor
10 F, 63 V
R1
SMD resistor
56 
R2
metal film resistor
51 
[1]
American Technical Ceramics type 100A or capacitor of same quality.
[2]
American Technical Ceramics type 100B or capacitor of same quality.
[3]
American Technical Ceramics type 800B or capacitor of same quality.
0603
C12
C10
C1
C3
C2
C4
C5
C8
C9
C11
C13
R1
R2
C6
C7
001aaj490
Printed-Circuit Board (PCB): Duroid 6006; r = 6.15 F/m; thickness = 0.64 mm; thickness copper plating = 35 m.
See Table 9 for a list of components.
Fig 2.
Component layout for class-AB production test circuit
BLL6H1214-500_1214LS-500
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 5 August 2013
© NXP B.V. 2013. All rights reserved.
5 of 21
BLL6H1214-500; BLL6H1214LS-500
NXP Semiconductors
LDMOS L-band radar power transistor
7.4 RF performance graphs
7.4.1 Performance curves measured with = 10 %, tp = 300 s and Th = 25 C
DDD
3/
:
DDD
*S
G%
3L:
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
(3) f = 1400 MHz
Output power as a function of input power;
typical values
Fig 4.
DDD
Ș'
3/:
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
Fig 3.
Power gain as a function of output power;
typical values
DDD
*S
G%
Ș'
Ș'
*S
3/:
VDS = 50 V; IDq = 150 mA.
I0+]
VDS = 50 V; PL = 500 W; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 5.
Drain efficiency as a function of output power;
typical values
BLL6H1214-500_1214LS-500
Product data sheet
Fig 6.
Power gain and drain efficiency as function of
frequency; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 5 August 2013
© NXP B.V. 2013. All rights reserved.
6 of 21
BLL6H1214-500; BLL6H1214LS-500
NXP Semiconductors
LDMOS L-band radar power transistor
DDD
5/LQ
G%
I0+]
VDS = 50 V; PL = 500 W; IDq = 150 mA.
Fig 7.
Input return loss as a function of frequency; typical value
7.4.2 Performance curves measured with  = 10 %, tp = 300 s and Th = 65 C
DDD
3/
:
3L:
DDD
*S
G%
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
(3) f = 1400 MHz
Output power as a function of input power;
typical values
BLL6H1214-500_1214LS-500
Product data sheet
3/:
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
Fig 8.
Fig 9.
Power gain as a function of output power;
typical values
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 5 August 2013
© NXP B.V. 2013. All rights reserved.
7 of 21
BLL6H1214-500; BLL6H1214LS-500
NXP Semiconductors
LDMOS L-band radar power transistor
DDD
Ș'
DDD
Ș'
*S
G%
Ș'
*S
3/:
VDS = 50 V; IDq = 100 mA.
I0+]
VDS = 50 V; PL = 500 W; IDq = 100 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 10. Drain efficiency as a function of output power;
typical values
Fig 11. Power gain and drain efficiency as function of
frequency; typical values
7.4.3 Performance curves measured with  = 10 %, tp = 300 s and f = 1300 MHz
001aal688
700
PL
(W)
001aal689
20
Gp
(dB)
600
18
(1)
500
(2)
(3)
16
400
(1)
(2)
(3)
300
14
200
12
100
10
0
0
5
10
15
20
25
0
100
200
300
400
Pi (W)
VDS = 50 V; IDq = 150 mA.
(1) Th = 40 C
(2) Th = 25 C
(2) Th = 25 C
(3) Th = 65C
(3) Th = 65C
Fig 12. Output power as a function of input power;
typical values
Product data sheet
600
700
PL (W)
VDS = 50 V;IDq = 150 mA.
(1) Th = 40 C
BLL6H1214-500_1214LS-500
500
Fig 13. Power gain as a function of output power;
typical values
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 5 August 2013
© NXP B.V. 2013. All rights reserved.
8 of 21
BLL6H1214-500; BLL6H1214LS-500
NXP Semiconductors
LDMOS L-band radar power transistor
001aal690
60
(1)
(2)
ηD
(%)
(3)
40
20
0
0
100
200
300
400
500
600
700
PL (W)
VDS = 50 V;IDq = 150 mA.
(1) Th = 40 C
(2) Th = 25 C
(3) Th = 65C
Fig 14. Drain efficiency as a function of output power; typical values
7.4.4 Performance curves measured with  = 20 %, tp = 500 s and Th = 25 C
001aal691
700
PL
(W)
001aal692
20
Gp
(dB)
600
16
(1)
500
(1)
(2)
(2)
(3)
(3)
12
400
300
8
200
4
100
0
0
0
5
10
15
20
25
0
100
200
300
400
Pi (W)
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
(3) f = 1400 MHz
Fig 15. Output power as a function of input power;
typical values
Product data sheet
600
700
PL (W)
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
BLL6H1214-500_1214LS-500
500
Fig 16. Power gain as a function of output power;
typical values
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 5 August 2013
© NXP B.V. 2013. All rights reserved.
9 of 21
BLL6H1214-500; BLL6H1214LS-500
NXP Semiconductors
LDMOS L-band radar power transistor
001aal693
60
Gp
(dB)
(1)
ηD
(%)
001aal694
20
45
Gp
(3)
40
ηD
(%)
ηD
18
(2)
55
16
35
14
25
12
15
20
0
0
100
200
300
400
500
600
700
PL (W)
10
1.15
1.25
5
1.45
1.35
f (GHz)
VDS = 50 V; IDq = 150 mA.
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 17. Drain efficiency as a function of output power;
typical values
Fig 18. Power gain and drain efficiency as function of
frequency; typical values
7.4.5 Performance curves measured with  = 20 %, tp = 500 s and Th = 65 C
001aal695
700
PL
(W)
001aal696
20
Gp
(dB)
600
18
(1)
500
(2)
16
(3)
400
(1)
(2)
300
(3)
14
200
12
100
10
0
0
5
10
15
20
25
0
100
200
300
400
Pi (W)
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
(3) f = 1400 MHz
Fig 19. Output power as a function of input power;
typical values
Product data sheet
600
700
PL (W)
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
BLL6H1214-500_1214LS-500
500
Fig 20. Power gain as a function of output power;
typical values
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 5 August 2013
© NXP B.V. 2013. All rights reserved.
10 of 21
BLL6H1214-500; BLL6H1214LS-500
NXP Semiconductors
LDMOS L-band radar power transistor
001aal697
60
001aal698
20
Gp
(dB)
ηD
(%)
55
ηD
(%)
18
ηD
45
16
Gp
35
(1)
40
(3) (2)
14
25
12
15
20
0
0
100
200
300
400
500
600
700
PL (W)
10
1.15
1.25
5
1.45
1.35
f (GHz)
VDS = 50 V; IDq = 150 mA.
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 21. Drain efficiency as a function of output power;
typical values
Fig 22. Power gain and drain efficiency as function of
frequency; typical values
7.4.6 Performance curves measured with  = 20 %, tp = 500 s and f = 1300 MHz
001aal699
700
PL
(W)
001aal700
20
Gp
(dB)
600
16
(1)
(1)
500
(2)
(2)
(3)
(3)
12
400
300
8
200
4
100
0
0
0
5
10
15
20
25
0
100
200
300
400
Pi (W)
VDS = 50 V; IDq = 150 mA.
(1) Th = 40 C
(2) Th = 25 C
(2) Th = 25 C
(3) Th = 65C
(3) Th = 65C
Fig 23. Output power as a function of input power;
typical values
Product data sheet
600
700
PL (W)
VDS = 50 V; IDq = 150 mA.
(1) Th = 40 C
BLL6H1214-500_1214LS-500
500
Fig 24. Power gain as a function of output power;
typical values
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 5 August 2013
© NXP B.V. 2013. All rights reserved.
11 of 21
BLL6H1214-500; BLL6H1214LS-500
NXP Semiconductors
LDMOS L-band radar power transistor
001aal701
60
ηD
(%)
(1)
(2)
40
(3)
20
0
0
100
200
300
400
500
600
700
PL (W)
VDS = 50 V; IDq = 150 mA.
(1) Th = 40 C
(2) Th = 25 C
(3) Th = 65C
Fig 25. Drain efficiency as a function of output power; typical values
7.4.7 Performance curves measured with  = 10 %, tp = 1 ms and Th = 25 C
001aal702
700
PL
(W)
001aal703
20
Gp
(dB)
600
16
(1)
500
(1)
(2)
(2)
(3)
(3)
12
400
300
8
200
4
100
0
0
0
5
10
15
20
25
0
100
200
300
400
Pi (W)
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
(3) f = 1400 MHz
Fig 26. Output power as a function of input power;
typical values
Product data sheet
600
700
PL (W)
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
BLL6H1214-500_1214LS-500
500
Fig 27. Power gain as a function of output power;
typical values
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 5 August 2013
© NXP B.V. 2013. All rights reserved.
12 of 21
BLL6H1214-500; BLL6H1214LS-500
NXP Semiconductors
LDMOS L-band radar power transistor
001aal704
60
(1)
ηD
(%)
001aal705
20
Gp
(dB)
(2)
55
ηD
(%)
ηD
45
18
Gp
(3)
40
16
35
14
25
12
15
20
0
0
100
200
300
400
500
600
700
PL (W)
10
1.15
1.25
5
1.45
1.35
f (GHz)
VDS = 50 V; IDq = 150 mA.
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 28. Drain efficiency as a function of output power;
typical values
Fig 29. Power gain and drain efficiency as function of
frequency; typical values
7.4.8 Performance curves measured with  = 10 %, tp = 1 ms and Th = 65 C
001aal706
700
PL
(W)
001aal707
20
Gp
(dB)
600
16
500
(1)
(1)
(2)
(2)
(3)
(3)
12
400
300
8
200
4
100
0
0
0
5
10
15
20
25
0
100
200
300
400
Pi (W)
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
(3) f = 1400 MHz
Fig 30. Output power as a function of input power;
typical values
Product data sheet
600
700
PL (W)
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
BLL6H1214-500_1214LS-500
500
Fig 31. Power gain as a function of output power;
typical values
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 5 August 2013
© NXP B.V. 2013. All rights reserved.
13 of 21
BLL6H1214-500; BLL6H1214LS-500
NXP Semiconductors
LDMOS L-band radar power transistor
001aal708
60
001aal709
20
Gp
(dB)
ηD
(%)
(1)
55
ηD
(%)
ηD
45
18
(2)
40
Gp
16
35
(3)
14
25
12
15
20
0
0
100
200
300
400
500
600
700
PL (W)
10
1.15
1.25
5
1.45
1.35
f (GHz)
VDS = 50 V; IDq = 150 mA.
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 32. Drain efficiency as a function of output power;
typical values
Fig 33. Power gain and drain efficiency as function of
frequency; typical values
7.4.9 Performance curves measured with  = 10 %, tp = 1 ms and f = 1300 MHz
001aal710
700
PL
(W)
001aal711
20
Gp
(dB)
600
16
(1)
(1)
500
(2)
(2)
(3)
(3)
12
400
300
8
200
4
100
0
0
0
5
10
15
20
25
0
100
200
300
400
Pi (W)
VDS = 50 V; IDq = 150 mA.
(1) Th = 40 C
(2) Th = 25 C
(2) Th = 25 C
(3) Th = 65C
(3) Th = 65C
Fig 34. Output power as a function of input power;
typical values
Product data sheet
600
700
PL (W)
VDS = 50 V; IDq = 150 mA.
(1) Th = 40 C
BLL6H1214-500_1214LS-500
500
Fig 35. Power gain as a function of output power;
typical values
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 5 August 2013
© NXP B.V. 2013. All rights reserved.
14 of 21
NXP Semiconductors
BLL6H1214-500; BLL6H1214LS-500
LDMOS L-band radar power transistor
001aal712
60
(1)
ηD
(%)
(2)
(3)
40
20
0
0
100
200
300
400
500
600
700
PL (W)
VDS = 50 V; IDq = 150 mA.
(1) Th = 40 C
(2) Th = 25 C
(3) Th = 65C
Fig 36. Drain efficiency as a function of output power; typical values
BLL6H1214-500_1214LS-500
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 5 August 2013
© NXP B.V. 2013. All rights reserved.
15 of 21
BLL6H1214-500; BLL6H1214LS-500
NXP Semiconductors
LDMOS L-band radar power transistor
8. Package outline
Flanged balanced ceramic package; 2 mounting holes; 4 leads
SOT539A
D
A
F
D1
U1
B
q
C
w2 M C M
H1
1
c
2
E1
p
H U2
5
L
3
A
E
w1 M A M B M
4
w3 M
b
Q
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
mm
4.7
4.2
inches
b
c
D
D1
e
E
E1
11.81 0.18 31.55 31.52
9.50
13.72
11.56 0.10 30.94 30.96
9.30
9.53
9.27
F
H
H1
L
1.75 17.12 25.53 3.48
1.50 16.10 25.27 2.97
p
Q
q
3.30
3.05
2.26
2.01
35.56
U1
U2
w1
41.28 10.29
0.25
41.02 10.03
w2
w3
0.51
0.25
0.374 0.375 0.069 0.674 1.005 0.137 0.130 0.089
0.185 0.465 0.007 1.242 1.241
1.625 0.405
1.400
0.010 0.020 0.010
0.540
0.366 0.365 0.059 0.634 0.995 0.117 0.120 0.079
0.165 0.455 0.004 1.218 1.219
1.615 0.395
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
10-02-02
12-05-02
SOT539A
Fig 37. Package outline SOT539A
BLL6H1214-500_1214LS-500
Product data sheet
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Rev. 3 — 5 August 2013
© NXP B.V. 2013. All rights reserved.
16 of 21
BLL6H1214-500; BLL6H1214LS-500
NXP Semiconductors
LDMOS L-band radar power transistor
Earless flanged balanced ceramic package; 4 leads
SOT539B
D
A
F
5
D1
D
U1
H1
w2
1
c
D
2
E1
U2
H
E
L
3
4
w3
b
Q
e
0
5
10 mm
scale
Dimensions
Unit(1)
w2
w3
0.25
0.25
max 0.185 0.465 0.007 1.242 1.241 0.374 0.375
0.069 0.674 1.005 0.137 0.089 1.275 0.405
0.54
inches nom
0.01
min 0.165 0.455 0.004 1.218 1.219 0.366 0.365
0.059 0.634 0.995 0.117 0.079 1.265 0.395
0.01
mm
max
nom
min
A
b
E
E1
4.7
11.81
0.18 31.55 31.52
c
D
D1
9.5
9.53
4.2
11.56
0.10 30.94 30.96
9.3
9.27
e
F
H
H1
L
Q
U1
U2
1.75 17.12 25.53 3.48
2.26 32.39 10.29
1.50 16.10 25.27 2.97
2.01 32.13 10.03
13.72
Note
1. millimeter dimensions are derived from the original inch dimensions.
Outline
version
References
IEC
JEDEC
JEITA
sot539b_po
European
projection
Issue date
12-05-02
13-05-24
SOT539B
Fig 38. Package outline SOT539B
BLL6H1214-500_1214LS-500
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 5 August 2013
© NXP B.V. 2013. All rights reserved.
17 of 21
NXP Semiconductors
BLL6H1214-500; BLL6H1214LS-500
LDMOS L-band radar power transistor
9. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
10. Abbreviations
Table 10.
Abbreviations
Acronym
Description
ESD
ElectroStatic Discharge
L-band
Long wave Band
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
SMD
Surface Mounted Device
VSWR
Voltage Standing-Wave Ratio
11. Revision history
Table 11.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLL6H1214-500_1214LS-500 v.3
20130805
Product data sheet
-
BLL6H1214-500 v.2
Modifications:
•
This document now describes both the BLL6H1214-500 and
BLL6H1214LS-500 products.
•
•
•
•
•
•
•
•
Table 1 on page 1: ‘mode of operation’ changed to ‘test signal’.
Table 4 on page 2: removed row ‘ID’.
Table 7 on page 3: ‘mode of operation’ changed to ‘test signal’.
Section 7 on page 4: moved several sections to this section.
Section 7.4 on page 6: updated figure notes.
Section 7.4.1 on page 6: updated graphs.
Section 7.4.2 on page 7: updated graphs.
Figure 38 on page 17: updated figure.
BLL6H1214-500 v.2
20100401
Product data sheet
-
BLL6H1214-500 v.1
BLL6H1214-500 v.1
20090120
Objective data sheet
-
-
BLL6H1214-500_1214LS-500
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 5 August 2013
© NXP B.V. 2013. All rights reserved.
18 of 21
NXP Semiconductors
BLL6H1214-500; BLL6H1214LS-500
LDMOS L-band radar power transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
BLL6H1214-500_1214LS-500
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 5 August 2013
© NXP B.V. 2013. All rights reserved.
19 of 21
NXP Semiconductors
BLL6H1214-500; BLL6H1214LS-500
LDMOS L-band radar power transistor
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BLL6H1214-500_1214LS-500
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 5 August 2013
© NXP B.V. 2013. All rights reserved.
20 of 21
NXP Semiconductors
BLL6H1214-500; BLL6H1214LS-500
LDMOS L-band radar power transistor
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
7.3
7.4
7.4.1
7.4.2
7.4.3
7.4.4
7.4.5
7.4.6
7.4.7
7.4.8
7.4.9
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 4
Ruggedness in class-AB operation . . . . . . . . . 4
Impedance information . . . . . . . . . . . . . . . . . . . 4
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
RF performance graphs . . . . . . . . . . . . . . . . . . 6
Performance curves measured with
 = 10 %, tp = 300 s and Th = 25 °C . . . . . . . . 6
Performance curves measured with
 = 10 %, tp = 300 s and Th = 65 °C . . . . . . . . 7
Performance curves measured with
 = 10 %, tp = 300 s and f = 1300 MHz. . . . . . 8
Performance curves measured with
 = 20 %, tp = 500 s and Th = 25 °C . . . . . . . . 9
Performance curves measured with
 = 20 %, tp = 500 s and Th = 65 °C . . . . . . . 10
Performance curves measured with
 = 20 %, tp = 500 s and f = 1300 MHz. . . . . 11
Performance curves measured with
 = 10 %, tp = 1 ms and Th = 25 °C . . . . . . . . 12
Performance curves measured with
 = 10 %, tp = 1 ms and Th = 65 °C . . . . . . . . 13
Performance curves measured with
 = 10 %, tp = 1 ms and f = 1300 MHz . . . . . . 14
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 16
Handling information. . . . . . . . . . . . . . . . . . . . 18
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 18
Legal information. . . . . . . . . . . . . . . . . . . . . . . 19
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 19
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Contact information. . . . . . . . . . . . . . . . . . . . . 20
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2013.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 5 August 2013
Document identifier: BLL6H1214-500_1214LS-500
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