BLS6G2731-6G 1. Product profile LDMOS S-Band radar power transistor

BLS6G2731-6G 1. Product profile LDMOS S-Band radar power transistor
BLS6G2731-6G
LDMOS S-Band radar power transistor
Rev. 2 — 16 December 2014
Product data sheet
1. Product profile
1.1 General description
6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz
range.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 C; tp = 100 s;  = 10 %; IDq = 25 mA; in a class-AB
production test circuit.
Mode of operation
pulsed RF
f
VDS
PL
Gp
D
tr
tf
(GHz)
(V)
(W)
(dB)
(%)
(ns)
(ns)
2.7 to 3.1
32
6
15
33
20
10
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling. You must use a ground strap or touch the PC case or other
grounded source before unpacking or handling the hardware.
1.2 Features and benefits
 Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage
of 32 V, an IDq of 25 mA, a tp of 100 s and a  of 10 %:
 Output power = 6 W
 Power gain = 15 dB
 Efficiency = 33 %
 Integrated ESD protection
 High flexibility with respect to pulse formats
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (2.7 GHz to 3.1 GHz)
 Internally matched for ease of use
 Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
 S-Band power amplifiers for radar applications in the 2.7 GHz to 3.1 GHz frequency
range
BLS6G2731-6G
NXP Semiconductors
LDMOS S-Band radar power transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
1
drain
2
gate
3
source
Simplified outline
Graphic symbol
1
1
[1]
2
3
sym112
2
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
BLS6G2731-6G -
Version
eared flanged ceramic package; 2 mounting holes; 2 leads
SOT975C
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Min
Max
Unit
VDS
drain-source voltage
-
60
V
VGS
gate-source voltage
0.5
+13
V
ID
drain current
-
3.5
A
Tstg
storage temperature
65
+150
C
Tj
junction temperature
-
200
C
5. Thermal characteristics
BLS6G2731-6G
Product data sheet
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-case)
thermal resistance from junction to case
Tcase = 80 C; PL = 6 W
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 16 December 2014
Typ
Unit
tp = 100 s;  = 10 %
1.56
K/W
tp = 200 s;  = 10 %
1.95
K/W
tp = 300 s;  = 10 %
2.20
K/W
tp = 100 s;  = 20 %
2.00
K/W
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LDMOS S-Band radar power transistor
6. Characteristics
Table 6.
Characteristics
Tj = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown
voltage
VGS = 0 V; ID = 0.18 mA
60
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 18 mA
1.4
1.8
2.4
V
IDSS
drain leakage current
VGS = 0 V; VDS = 28 V
-
-
1.4
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
2.7
-
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
140
nA
gfs
forward transconductance
VDS = 10 V; ID = 0.9 A
0.81
-
-
S
RDS(on)
drain-source on-state
resistance
VGS = VGS(th) + 3.75 V;
ID = 0.63 A
328
-
1260
m
7. Application information
Table 7.
Application information
Mode of operation: pulsed RF; tp = 100 s;  = 10 %; RF performance at VDS = 32 V; IDq = 25 mA;
Tcase = 25 C; unless otherwise specified, in a class-AB production circuit.
BLS6G2731-6G
Product data sheet
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCC
supply voltage
PL = 6 W
-
-
32
V
Gp
power gain
PL = 6 W
14
15
-
dB
D
drain efficiency
PL = 6 W
30
33
-
%
tr
rise time
PL = 6 W
-
20
50
ns
tf
fall time
PL = 6 W
-
10
50
ns
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Rev. 2 — 16 December 2014
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LDMOS S-Band radar power transistor
Table 8.
Typical impedance
f
ZS
ZL
GHz


2.7
2.44  j17.78
3.30  j4.14
2.8
2.99  j16.04
4.52  j3.72
2.9
3.94  j14.56
5.67  j4.67
3.0
5.44  j13.75
4.94  j6.39
3.1
6.89  j14.58
3.00  j6.56
drain
ZL
gate
ZS
001aaf059
Fig 1.
Definition of transistor impedance
7.1 Ruggedness in class-AB operation
The BLS6G2731-6G is capable of withstanding a load mismatch corresponding to
VSWR = 5 : 1 through all phases under the following conditions: VDS = 32 V; IDq = 25 mA;
PL = 6 W; tp = 100 s;  = 10 %.
BLS6G2731-6G
Product data sheet
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Rev. 2 — 16 December 2014
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LDMOS S-Band radar power transistor
7.2 Graphs
001aaj447
18
Gp
(dB)
001aaj448
18
Gp
(dB)
(2)
(1)
16
16
(2)
14
14
(3)
(3)
12
12
0
6
12
18
0
6
12
PL (W)
VDS = 32 V; IDq = 25 mA; tp = 300 s;  = 10 %.
VDS = 32 V; IDq = 25 mA; tp = 100 s;  = 20 %.
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
(3) f = 3.1 GHz
Power gain as a function of load power; typical
values
001aaj449
70
ηD
(%)
60
18
PL (W)
(1) f = 2.7 GHz
Fig 2.
(1)
(1)
Fig 3.
Power gain as a function of load power; typical
values
001aaj450
70
ηD
(%)
60
(1)
(2)
(2)
50
50
(3)
(3)
40
40
30
30
20
20
10
10
0
0
0
6
12
18
0
PL (W)
VDS = 32 V; IDq = 25 mA; tp = 300 s;  = 10 %.
(2) f = 2.9 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
(3) f = 3.1 GHz
Drain efficiency as a function of load power;
typical values
Product data sheet
18
VDS = 32 V; IDq = 25 mA; tp = 100 s;  = 20 %.
(1) f = 2.7 GHz
BLS6G2731-6G
12
PL (W)
(1) f = 2.7 GHz
Fig 4.
6
Fig 5.
Drain efficiency as a function of load power;
typical values
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LDMOS S-Band radar power transistor
001aaj451
20
PL
(W)
PL
(W)
(1)
(2)
16
12
001aaj452
20
(1)
16
(2)
12
(3)
8
8
4
4
0
(3)
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Pi (W)
0
VDS = 32 V; IDq = 25 mA; tp = 300 s;  = 10 %.
0.1
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
(3) f = 3.1 GHz
Load power as a function of input power;
typical values
001aaj453
18
Fig 7.
0.4
0.5
0.6
0.7
Pi (W)
ηD
(%)
Load power as a function of input power;
typical values
001aaj454
18
50
Gp
Gp
(dB)
0.3
VDS = 32 V; IDq = 25 mA; tp = 100 s;  = 20 %.
(1) f = 2.7 GHz
Fig 6.
0.2
50
Gp
Gp
(dB)
ηD
(%)
ηD
ηD
16
40
16
40
14
30
14
30
12
2650
2750
2850
2950
20
3050
3150
f (MHz)
12
2650
VDS = 32 V; IDq = 25 mA; tp = 300 s;  = 10 %.
Fig 8.
Power gain and drain efficiency as function of
frequency; typical values
BLS6G2731-6G
Product data sheet
2750
2850
2950
20
3050
3150
f (MHz)
VDS = 32 V; IDq = 25 mA; tp = 100 s;  = 20 %.
Fig 9.
Power gain and drain efficiency as function of
frequency; typical values
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Rev. 2 — 16 December 2014
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LDMOS S-Band radar power transistor
8. Test information
C7
C1
C2
C3
C4
R1
C8
C5
C9
R2
C10
L3
C6
C11
L2
L1
001aaj455
Striplines are on a double copper-clad Duroid 6006 Printed-Circuit Board (PCB) with r = 6.15 and thickness = 0.64 mm.
See Table 9 for list of components.
Fig 10. Component layout for 2700 MHz to 3100 MHz test circuit
Table 9.
List of components (see Figure 10)
Striplines are on a double copper-clad Duroid 6006 Printed-Circuit Board (PCB) with r = 6.15 and thickness = 0.64 mm.
Component
Description
C1
multilayer ceramic chip capacitor 20 nF
ATC 200B or equivalent
C2, C9
multilayer ceramic chip capacitor 100 pF
ATC 100B or equivalent
C3
multilayer ceramic chip capacitor 10 F; 35 V
AVX TAJD106K035R or equivalent
C4, C8
multilayer ceramic chip capacitor 1 nF
ATC 700A or equivalent
C5, C10, C11
multilayer ceramic chip capacitor 20 pF
ATC 100A or equivalent
C6
multilayer ceramic chip capacitor 2.7 pF
ATC 100A or equivalent
C7
electrolytic capacitor
47 F; 63 V
R1
SMD resistor
56 
R2
SMD resistor
3.9 
L1, L2, L3
copper (Cu) strips
-
BLS6G2731-6G
Product data sheet
Value
Remarks
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Rev. 2 — 16 December 2014
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9. Package outline
Earless flanged ceramic package; 2 leads
SOT975C
Z4
Z6
Z3
Z5
D
A
Z1
F
U1
D1
A
H1
Z2
minimal dimensions for solder pattern
c
1
L
Lp
E1
H
U2
E
0
5 mm
scale
Z4
Z5
Z6
3.30
1.14
1.52
α
7°
2
w1
b
0°
α
A
7°
0.130 0.045 0.060
Q
0°
Dimensions (mm dimensions are derived from the original inch dimensions)
Unit
A
max 3.15
nom
min 2.59
mm
b
c
D
D1
E
E1
3.38
0.23
6.55
6.93
6.55
6.93
F
H
H1
L
0.23 10.29 7.49
Lp
Q
U1
U2
1.02 +0.05 6.43
6.43
0.51
6.27
1.65
3.23
0.18
6.40
6.78
6.40
6.78
0.18 10.03 6.73
-0.05
6.27
w1
Z1
Z2
Z3
0.51
6.35
6.35
1.02
0.040 +0.002 0.253 0.253
max 0.124 0.133 0.009 0.258 0.273 0.258 0.273 0.009 0.405 0.295
0.065
0.020 0.250 0.250 0.040
inches nom
0.020 -0.002 0.247 0.247
min 0.102 0.127 0.007 0.252 0.267 0.252 0.267 0.007 0.395 0.265
sot975c_po
Outline
version
References
IEC
JEDEC
JEITA
European
projection
Issue date
08-07-10
14-10-13
SOT975C
Fig 11. Package outline SOT975C
BLS6G2731-6G
Product data sheet
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10. Abbreviations
Table 10.
Abbreviations
Acronym
Description
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
RF
Radio Frequency
S-Band
Short wave Band
SMD
Surface Mounted Device
VSWR
Voltage Standing-Wave Ratio
11. Revision history
Table 11.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLS6G2731-6G v.2
20141216
Product data sheet
-
BLS6G2731-6G v.1
-
-
Modifications
BLS6G2731-6G v.1
BLS6G2731-6G
Product data sheet
•
Package outline drawing updated.
20090219
Product data sheet
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12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
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office. In case of any inconsistency or conflict with the short data sheet, the
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changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
BLS6G2731-6G
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
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representation or warranty that such applications will be suitable for the
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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products are sold subject to the general terms and conditions of commercial
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Notice: All referenced brands, product names, service names and trademarks
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13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
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14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 4
Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2014.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 16 December 2014
Document identifier: BLS6G2731-6G
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