S29GL-N MirrorBit Flash Family S29GL064N, S29GL032N

S29GL-N MirrorBit Flash Family S29GL064N, S29GL032N
S29GL-N MirrorBit® Flash Family
S29GL064N, S29GL032N
64 Megabit, 32 Megabit
3.0-Volt only Page Mode Flash Memory
Featuring 110 nm MirrorBit Process Technology
S29GL-N MirrorBit® Flash Family Cover Sheet
Data Sheet
Notice to Readers: This document states the current technical specifications regarding the Spansion
product(s) described herein. Each product described herein may be designated as Advance Information,
Preliminary, or Full Production. See Notice On Data Sheet Designations for definitions.
Publication Number S29GL-N_01
Revision 12
Issue Date October 29, 2008
D at a
S hee t
Notice On Data Sheet Designations
Spansion Inc. issues data sheets with Advance Information or Preliminary designations to advise readers of
product information or intended specifications throughout the product life cycle, including development,
qualification, initial production, and full production. In all cases, however, readers are encouraged to verify
that they have the latest information before finalizing their design. The following descriptions of Spansion data
sheet designations are presented here to highlight their presence and definitions.
Advance Information
The Advance Information designation indicates that Spansion Inc. is developing one or more specific
products, but has not committed any design to production. Information presented in a document with this
designation is likely to change, and in some cases, development on the product may discontinue. Spansion
Inc. therefore places the following conditions upon Advance Information content:
“This document contains information on one or more products under development at Spansion Inc.
The information is intended to help you evaluate this product. Do not design in this product without
contacting the factory. Spansion Inc. reserves the right to change or discontinue work on this proposed
product without notice.”
Preliminary
The Preliminary designation indicates that the product development has progressed such that a commitment
to production has taken place. This designation covers several aspects of the product life cycle, including
product qualification, initial production, and the subsequent phases in the manufacturing process that occur
before full production is achieved. Changes to the technical specifications presented in a Preliminary
document should be expected while keeping these aspects of production under consideration. Spansion
places the following conditions upon Preliminary content:
“This document states the current technical specifications regarding the Spansion product(s)
described herein. The Preliminary status of this document indicates that product qualification has been
completed, and that initial production has begun. Due to the phases of the manufacturing process that
require maintaining efficiency and quality, this document may be revised by subsequent versions or
modifications due to changes in technical specifications.”
Combination
Some data sheets contain a combination of products with different designations (Advance Information,
Preliminary, or Full Production). This type of document distinguishes these products and their designations
wherever necessary, typically on the first page, the ordering information page, and pages with the DC
Characteristics table and the AC Erase and Program table (in the table notes). The disclaimer on the first
page refers the reader to the notice on this page.
Full Production (No Designation on Document)
When a product has been in production for a period of time such that no changes or only nominal changes
are expected, the Preliminary designation is removed from the data sheet. Nominal changes may include
those affecting the number of ordering part numbers available, such as the addition or deletion of a speed
option, temperature range, package type, or VIO range. Changes may also include those needed to clarify a
description or to correct a typographical error or incorrect specification. Spansion Inc. applies the following
conditions to documents in this category:
“This document states the current technical specifications regarding the Spansion product(s)
described herein. Spansion Inc. deems the products to have been in sufficient production volume such
that subsequent versions of this document are not expected to change. However, typographical or
specification corrections, or modifications to the valid combinations offered may occur.”
Questions regarding these document designations may be directed to your local sales office.
2
S29GL-N MirrorBit® Flash Family
S29GL-N_01_12 October 29, 2008
S29GL-N MirrorBit® Flash Family
S29GL064N, S29GL032N
64 Megabit, 32 Megabit
3.0 Volt-only Page Mode Flash Memory
Featuring 110 nm MirrorBit Process Technology
Data Sheet
Distinctive Characteristics
„ Low power consumption
Architectural Advantages
– 25 mA typical initial read current,
1 mA typical page read current
– 50 mA typical erase/program current
– 1 µA typical standby mode current
„ Single power supply operation
„ Manufactured on 110 nm MirrorBit process technology
„ Secured Silicon Sector region
– 128-word/256-byte sector for permanent, secure identification
through an 8-word/16-byte random Electronic Serial Number,
accessible through a command sequence
– Programmed and locked at the factory or by the customer
„ Package options
„ Flexible sector architecture
– 64Mb (uniform sector models): One hundred twenty-eight 32 Kword
(64 KB) sectors
– 64 Mb (boot sector models): One hundred twenty-seven 32 Kword
(64 KB) sectors + eight 4Kword (8KB) boot sectors
– 32 Mb (uniform sector models): Sixty-four 32Kword (64 KB) sectors
– 32 Mb (boot sector models): Sixty-three 32Kword (64 KB) sectors +
eight 4Kword (8KB) boot sectors
„ Enhanced VersatileI/O™ Control
– All input levels (address, control, and DQ input levels) and outputs
are determined by voltage on VIO input. VIO range is 1.65 to VCC
„ Compatibility with JEDEC standards
– Provides pinout and software compatibility for single-power supply
flash, and superior inadvertent write protection
„ 100,000 erase cycles typical per sector
„ 20-year data retention typical
Performance Characteristics
„ High performance
–
–
–
–
90 ns access time
8-word/16-byte page read buffer
25 ns page read time
16-word/32-byte write buffer which reduces overall programming
time for multiple-word updates
Publication Number S29GL-N_01
–
–
–
–
48-pin TSOP
56-pin TSOP
64-ball Fortified BGA
48-ball fine-pitch BGA
Software & Hardware Features
„ Software features
– Advanced Sector Protection: offers Persistent Sector Protection and
Password Sector Protection
– Program Suspend & Resume: read other sectors before
programming operation is completed
– Erase Suspend & Resume: read/program other sectors before an
erase operation is completed
– Data# polling & toggle bits provide status
– CFI (Common Flash Interface) compliant: allows host system to
identify and accommodate multiple flash devices
– Unlock Bypass Program command reduces overall multiple-word
programming time
„ Hardware features
– WP#/ACC input accelerates programming time (when high voltage
is applied) for greater throughput during system production. Protects
first or last sector regardless of sector protection settings on uniform
sector models
– Hardware reset input (RESET#) resets device
– Ready/Busy# output (RY/BY#) detects program or erase cycle
completion
Revision 12
Issue Date October 29, 2008
D at a
S hee t
General Description
The S29GL-N family of devices are 3.0-Volt single-power Flash memory manufactured using 110 nm
MirrorBit technology. The S29GL064N is a 64-Mb device organized as 4,194,304 words or 8,388,608 bytes.
The S29GL032N is a 32-Mb device organized as 2,097,152 words or 4,194,304 bytes. Depending on the
model number, the devices have 16-bit wide data bus only, or a 16-bit wide data bus that can also function as
an 8-bit wide data bus by using the BYTE# input. The devices can be programmed either in the host system
or in standard EPROM programmers.
Access times as fast as 90 ns are available. Note that each access time has a specific operating voltage
range (VCC) as specified in the Product Selector Guide and the Ordering Information–S29GL032N, and
Ordering Information–S29GL064N. Package offerings include 48-pin TSOP, 56-pin TSOP, 48-ball fine-pitch
BGA and 64-ball Fortified BGA, depending on model number. Each device has separate chip enable (CE#),
write enable (WE#) and output enable (OE#) controls.
Each device requires only a single 3.0-Volt power supply for both read and write functions. In addition to a
VCC input, a high-voltage accelerated program (ACC) feature provides shorter programming times through
increased voltage on the WP#/ACC or ACC input. This feature is intended to facilitate factory throughput
during system production, but may also be used in the field if desired.
The device is entirely command set compatible with the JEDEC single-power-supply Flash standard.
Commands are written to the device using standard microprocessor write timing. Write cycles also internally
latch addresses and data needed for the programming and erase operations.
The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully erased when shipped from the factory.
The Advanced Sector Protection features several levels of sector protection, which can disable both the
program and erase operations in certain sectors. Persistent Sector Protection is a method that replaces the
previous 12-volt controlled protection method. Password Sector Protection is a highly sophisticated protection
method that requires a password before changes to certain sectors are permitted.
Device programming and erasure are initiated through command sequences. Once a program or erase
operation begins, the host system need only poll the DQ7 (Data# Polling) or DQ6 (toggle) status bits or
monitor the Ready/Busy# (RY/BY#) output to determine whether the operation is complete. To facilitate
programming, an Unlock Bypass mode reduces command sequence overhead by requiring only two write
cycles to program data instead of four.
Hardware data protection measures include a low VCC detector that automatically inhibits write operations
during power transitions. The hardware sector protection feature disables both program and erase operations
in any combination of sectors of memory. This can be achieved in-system or via programming equipment.
The Erase Suspend/Erase Resume feature allows the host system to pause an erase operation in a given
sector to read or program any other sector and then complete the erase operation. The Program Suspend/
Program Resume feature enables the host system to pause a program operation in a given sector to read
any other sector and then complete the program operation.
The hardware RESET# pin terminates any operation in progress and resets the device, after which it is then
ready for a new operation. The RESET# pin may be tied to the system reset circuitry. A system reset would
thus also reset the device, enabling the host system to read boot-up firmware from the Flash memory device.
The device reduces power consumption in the standby mode when it detects specific voltage levels on CE#
and RESET#, or when addresses are stable for a specified period of time.
The Write Protect (WP#) feature protects the first or last sector by asserting a logic low on the WP#/ACC pin
or WP# pin, depending on model number. The protected sector is still protected even during accelerated
programming.
The Secured Silicon Sector provides a 128-word/256-byte area for code or data that can be permanently
protected. Once this sector is protected, no further changes within the sector can occur.
Spansion MirrorBit flash technology combines years of Flash memory manufacturing experience to produce
the highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a
sector simultaneously via hot-hole assisted erase. The data is programmed using hot electron injection.
4
S29GL-N MirrorBit® Flash Family
S29GL-N_01_12 October 29, 2008
Data
She et
Table of Contents
Distinctive Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
General Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
1.
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3.
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.
Pin Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5.
Logic Symbols . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6.
Ordering Information–S29GL032N . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
7.
Ordering Information–S29GL064N . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
7.1
Valid Combinations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
8.
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.1
Word/Byte Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.2
Requirements for Reading Array Data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.3
Writing Commands/Command Sequences . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.4
Standby Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.5
Automatic Sleep Mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.6
RESET#: Hardware Reset Pin. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.7
Output Disable Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.8
Autoselect Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.9
Advanced Sector Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.10 Lock Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.11 Persistent Sector Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.12 Password Sector Protection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.13 Password and Password Protection Mode Lock Bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.14 Persistent Protection Bit Lock (PPB Lock Bit) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.15 Secured Silicon Sector Flash Memory Region . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.16 Write Protect (WP#/ACC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.17 Hardware Data Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9.
Common Flash Memory Interface (CFI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
10.
Command Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.1 Reading Array Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.2 Reset Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.3 Autoselect Command Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.4 Enter/Exit Secured Silicon Sector Command Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.5 Program Suspend/Program Resume Command Sequence . . . . . . . . . . . . . . . . . . . . . . . . .
10.6 Chip Erase Command Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.7 Sector Erase Command Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.8 Erase Suspend/Erase Resume Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.9 Command Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.10 Write Operation Status. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.11 DQ7: Data# Polling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.12 RY/BY#: Ready/Busy#. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.13 DQ6: Toggle Bit I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.14 DQ2: Toggle Bit II . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.15 Reading Toggle Bits DQ6/DQ2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.16 DQ5: Exceeded Timing Limits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.17 DQ3: Sector Erase Timer. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.18 DQ1: Write-to-Buffer Abort. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11.
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
12.
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
13.
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
October 29, 2008 S29GL-N_01_12
S29GL-N MirrorBit® Flash Family
17
17
17
18
19
19
19
19
29
30
31
31
34
34
35
35
36
36
41
41
41
42
42
46
47
48
50
51
55
55
56
57
58
59
59
59
60
5
D at a
6
S hee t
14.
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
14.1 Key to Switching Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
15.
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
16.
Erase And Programming Performance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
17.
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
17.1 TS048—48-Pin Standard Thin Small Outline Package (TSOP) . . . . . . . . . . . . . . . . . . . . . .
17.2 TS056—56-Pin Standard Thin Small Outline Package (TSOP) . . . . . . . . . . . . . . . . . . . . . .
17.3 VBK048—Ball Fine-pitch Ball Grid Array (BGA) 8.15x 6.15 mm Package . . . . . . . . . . . . . .
17.4 LAA064—64-Ball Fortified Ball Grid Array (BGA) 13 x 11 mm Package . . . . . . . . . . . . . . . .
17.5 LAE064-64-Ball Fortified Ball Grid Array (BGA) 9 x 9 mm Package . . . . . . . . . . . . . . . . . . .
18.
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
S29GL-N MirrorBit® Flash Family
74
74
75
76
77
78
S29GL-N_01_12 October 29, 2008
Data
She et
Figures
Figure 3.1
Figure 3.2
Figure 3.3
Figure 3.4
Figure 5.1
48-Pin Standard TSOP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
56-Pin Standard TSOP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
64-ball Fortified BGA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
48-ball Fine-pitch BGA (VBK 048) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
S29GL064N Logic Symbol
(Models 01, 02, V1, V2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 5.2
S29GL064N Logic Symbol
(Models 03, 04) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 5.3
S29GL064N Logic Symbol
(Models 06, 07, V6, V7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 5.4
S29GL032N Logic Symbol
(Models 01, 02, V1, V2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 5.5
S29GL032N Logic Symbol
(Models 03, 04) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 10.1 Write Buffer Programming Operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Figure 10.2 Program Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Figure 10.3 Program Suspend/Program Resume. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Figure 10.4 Erase Operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Figure 10.5 Data# Polling Algorithm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
Figure 10.6 Toggle Bit Algorithm. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
Figure 11.1 Maximum Negative Overshoot Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
Figure 11.2 Maximum Positive Overshoot Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
Figure 14.1 Test Setup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
Figure 14.2 Input Waveforms and Measurement Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
Figure 15.1 VCC Power-up Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .64
Figure 15.2 Read Operation Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
Figure 15.3 Page Read Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
Figure 15.4 Reset Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
Figure 15.5 Program Operation Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .68
Figure 15.6 Accelerated Program Timing Diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
Figure 15.7 Chip/Sector Erase Operation Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .69
Figure 15.8 Data# Polling Timings (During Embedded Algorithms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .69
Figure 15.9 Toggle Bit Timings (During Embedded Algorithms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .70
Figure 15.10 DQ2 vs. DQ6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .70
Figure 15.11 Alternate CE# Controlled Write (Erase/Program) Operation Timings . . . . . . . . . . . . . . . . . . .72
October 29, 2008 S29GL-N_01_12
S29GL-N MirrorBit® Flash Family
7
D at a
S hee t
Tables
Table 6.1
Table 8.1
Table 8.2
Table 8.3
Table 8.4
Table 8.5
Table 8.6
Table 8.7
Table 8.8
Table 8.9
Table 8.10
Table 8.11
Table 9.1
Table 9.2
Table 9.3
Table 9.4
Table 10.1
Table 10.2
Table 10.3
Table 10.4
Table 10.5
Table 13.1
Table 14.1
Table 15.1
Table 15.2
Table 15.3
Table 15.4
Table 16.1
8
S29GL032N Ordering Options (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
S29GL032N (Models 01, 02, V1, V2) Sector Addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
S29GL032N (Model 03) Top Boot Sector Addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21
S29GL032N (Model 04) Bottom Boot Sector Addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . .22
S29GL064N (Models 01, 02, V1, V2) Sector Addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
S29GL064N (Model 03) Top Boot Sector Addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24
S29GL064N (Model 04) Bottom Boot Sector Addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . .26
S29GL064N (Models 06, 07, V6, V7) Sector Addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . .27
Autoselect Codes, (High Voltage Method) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .29
Lock Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .31
Sector Protection Schemes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .33
CFI Query Identification String . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .37
System Interface String . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .38
Device Geometry Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .39
Primary Vendor-Specific Extended Query . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .40
Command Definitions (x16 Mode, BYTE# = VIH) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .51
Sector Protection Commands (x16) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .52
Command Definitions (x8 Mode, BYTE# = VIL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .53
Sector Protection Commands (x8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .54
Write Operation Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .60
DC Characteristics, CMOS Compatible . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .62
Test Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .63
Read-Only Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .64
Hardware Reset (RESET#) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .66
Erase and Program Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .67
Alternate CE# Controlled Erase and Program Operations . . . . . . . . . . . . . . . . . . . . . . . . . . .71
TSOP Pin and BGA Package Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .73
S29GL-N MirrorBit® Flash Family
S29GL-N_01_12 October 29, 2008
Data
1.
She et
Product Selector Guide
Part Number
VIO = 2.7–3.6 V
VCC = 2.7–3.6 V
Speed Option
S29GL064N
S29GL032N
90
90
VIO = 1.65–3.6 V
110
110
Max. Access Time (ns)
90
110
90
110
Max. CE# Access Time (ns)
90
110
90
110
Max. Page Access Time (ns)
25
30
25
30
Max. OE# Access Time (ns)
25
30
25
30
2. Block Diagram
DQ15–DQ0 (A-1)
RY/BY#
VCC
Sector Switches
VSS
Erase Voltage
Generator
Input/Output
Buffers
RESET#
WE#
WP#/ACC
BYTE#
State
Control
Command
Register
PGM Voltage
Generator
Chip Enable
Output Enable
Logic
CE#
OE#
VCC Detector
Timer
Address Latch
STB
STB
Data
Latch
Y-Decoder
Y-Gating
X-Decoder
Cell Matrix
AMax**–A0
Note
**AMAX GL064N = A21, GL032N = A20.
October 29, 2008 S29GL-N_01_12
S29GL-N MirrorBit® Flash Family
9
D at a
3.
S hee t
Connection Diagrams
Special Package Handling Instructions
Special handling is required for Flash Memory products in molded packages (TSOP and BGA). The package
and/or data integrity may be compromised if the package body is exposed to temperatures above 150°C for
prolonged periods of time.
Figure 3.1 48-Pin Standard TSOP
S29GL064N, S29GL032N (Models 03, 04 only)
S29GL064N (Models 06, 07, V6, V7 only)
A15
A14
A13
A12
A11
A10
A9
A8
A19
A20
WE#
RESET#
A21
WP#/ACC
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
A15
A14
A13
A12
A11
A10
A9
A8
A21
A20
WE#
RESET#
ACC
WP#
A19
A18
A17
A7
A6
A5
A4
A3
A2
A1
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
A16
VIO
VSS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
VSS
CE#
A0
A16
BYTE#
VSS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
VSS
CE#
A0
NC on S29GL032N
Figure 3.2 56-Pin Standard TSOP
NC on S29GL032N
10
NC
NC
A15
A14
A13
A12
A11
A10
A9
A8
A19
A20
WE#
RESET#
A21
WP#/ACC
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
S29GL064N, S29GL032N
(Models 01, 02, V1, V2 only)
S29GL-N MirrorBit® Flash Family
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
NC
NC
A16
BYTE#
VSS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
VSS
CE#
A0
NC
VIO
S29GL-N_01_12 October 29, 2008
Data
She et
Figure 3.3 64-ball Fortified BGA
S29GL064N, S29GL032N (Models 01, 02, 03, 04, V1, V2 only)
Top View, Balls Facing Down
NC on S29GL032N
NC on 03, 04 options
A8
B8
D8
E8
F8
G8
H8
NC
NC
NC
NC
VIO
VSS
NC
NC
A7
B7
C7
D7
E7
F7
G7
H7
A13
A12
A14
A15
A16
BYTE#
DQ15/A-1
VSS
A6
B6
C6
D6
E6
F6
G6
H6
A9
A8
A10
A11
DQ7
DQ14
DQ13
DQ6
A5
B5
C5
D5
E5
F5
G5
H5
RESET#
A21
A19
DQ5
DQ12
VCC
DQ4
WE#
A4
B4
RY/BY# WP#/ACC
October 29, 2008 S29GL-N_01_12
C8
C4
D4
E4
F4
G4
H4
A18
A20
DQ2
DQ10
DQ11
DQ3
A3
B3
C3
D3
E3
F3
G3
H3
A7
A17
A6
A5
DQ0
DQ8
DQ9
DQ1
A2
B2
C2
D2
E2
F2
G2
H2
A3
A4
A2
A1
A0
CE#
OE#
VSS
A1
B1
C1
D1
E1
F1
G1
H1
NC
NC
NC
NC
NC
VIO
NC
NC
S29GL-N MirrorBit® Flash Family
11
D at a
S hee t
Figure 3.4 48-ball Fine-pitch BGA (VBK 048)
S29GL064N, S29GL032N (Models 03, 04 only)
Top View, Balls Facing Down
NC on S29GL032N
A6
B6
C6
D6
E6
F6
G6
H6
A13
A12
A14
A15
A16
BYTE#
DQ15/A-1
VSS
A5
B5
C5
D5
E5
F5
G5
H5
A9
A8
A10
A11
DQ7
DQ14
DQ13
DQ6
A4
WE#
A3
B4
C4
D4
E4
F4
G4
H4
RESET#
A21
A19
DQ5
DQ12
VCC
DQ4
B3
RY/BY# WP#/ACC
12
C3
D3
E3
F3
G3
H3
A18
A20
DQ2
DQ10
DQ11
DQ3
A2
B2
C2
D2
E2
F2
G2
H2
A7
A17
A6
A5
DQ0
DQ8
DQ9
DQ1
A1
B1
C1
D1
E1
F1
G1
H1
A3
A4
A2
A1
A0
CE#
OE#
VSS
S29GL-N MirrorBit® Flash Family
S29GL-N_01_12 October 29, 2008
Data
4.
She et
Pin Descriptions
Pin
Description
A21–A0
22 Address inputs (S29GL064N)
A20–A0
21 Address inputs (S29GL032N)
DQ7–DQ0
8 Data inputs/outputs
DQ14–DQ0
15 Data inputs/outputs
DQ15/A-1
CE#
DQ15 (Data input/output, word mode), A-1 (LSB Address input, byte mode)
Chip Enable input
OE#
Output Enable input
WE#
Write Enable input
WP#/ACC
Hardware Write Protect input/Programming Acceleration input
ACC
Acceleration input
WP#
Hardware Write Protect input
RESET#
Hardware Reset Pin input
RY/BY#
Ready/Busy output
BYTE#
Selects 8-bit or 16-bit mode
VCC
3.0 volt-only single power supply (see Product Selector Guide for speed options and
voltage supply tolerances)
VIO
Output Buffer Power
VSS
Device Ground
NC
Pin Not Connected Internally
October 29, 2008 S29GL-N_01_12
S29GL-N MirrorBit® Flash Family
13
D at a
5.
S hee t
Logic Symbols
Figure 5.1 S29GL064N Logic Symbol
(Models 01, 02, V1, V2)
22
Figure 5.2 S29GL064N Logic Symbol
(Models 03, 04)
22
A21–A0
CE#
A21–A0
16 or 8
DQ15–DQ0
(A-1)
CE#
OE#
OE#
WE#
WE#
WP#/ACC
WP#/ACC
RESET#
RESET#
VIO
BYTE#
RY/BY#
16 or 8
DQ15–DQ0
(A-1)
RY/BY#
BYTE#
Figure 5.3 S29GL064N Logic Symbol
(Models 06, 07, V6, V7)
22
A21–A0
16
DQ15–DQ0
CE#
OE#
WE#
WP#
ACC
RESET#
RY/BY#
VIO
Figure 5.4 S29GL032N Logic Symbol
(Models 01, 02, V1, V2)
21
Figure 5.5 S29GL032N Logic Symbol
(Models 03, 04)
21
A20–A0
CE#
16 or 8
DQ15–DQ0
(A-1)
A20–A0
CE#
OE#
OE#
WE#
WE#
WP#/ACC
WP#/ACC
RESET#
RESET#
VIO
BYTE#
RY/BY#
16 or 8
DQ15–DQ0
(A-1)
RY/BY#
BYTE#
14
S29GL-N MirrorBit® Flash Family
S29GL-N_01_12 October 29, 2008
Data
6.
She et
Ordering Information–S29GL032N
S29GL032N Standard Products
Standard products are available in several packages and operating ranges. The order number (Valid
Combination) is formed by a combination of the following:
S29GL032N
90
T
F
I
01
0
PACKING TYPE
0 = Tray
2 = 7-inch Tape and Reel
3 = 13-inch Tape and Reel
MODEL NUMBER
01 = x8/x16, VCC= VIO = 2.7 – 3.6 V, Uniform sector, WP#/ACC = VIL protects highest addressed sector
02 = x8/x16, VCC = VIO = 2.7 – 3.6 V, Uniform sector, WP#/ACC = VIL protects lowest addressed sector
03 = x8/x16, VCC = 2.7 – 3.6 V, Top boot sector, WP#/ACC = VIL protects top two addressed sectors
04 = x8/x16, VCC = 2.7 – 3.6 V, Bottom boot sector, WP#/ACC = VIL protects bottom two addressed sectors
V1 = x8/x16, VCC = 2.7 – 3.6 V, VIO = 1.65 - 3.6 V, Uniform sector, WP#/ACC = VIL protects highest addressed
sector
V2 = x8/x16, VCC = 2.7 – 3.6 V, VIO = 1.65 - 3.6 V, Uniform sector, WP#/ACC = VIL protects lowest addressed sector
TEMPERATURE RANGE
I = Industrial (–40°C to +85°C)
PACKAGE MATERIAL SET
A = Standard (Note 4)
F = Pb-Free
PACKAGE TYPE
B = Fine-pitch Ball-Grid Array Package
D = Fortified Ball-Grid Array Package(LAE064), 9 mm x 9 mm
F = Fortified Ball-Grid Array Package (LAA064), 13 mm x 11 mm
T = Thin Small Outline Package (TSOP) Standard Pinout
SPEED OPTION
See Product Selector Guide and Valid Combinations (90 = 90 ns, 11 = 110 ns)
DEVICE NUMBER/DESCRIPTION
S29GL032N
32 Megabit Page-Mode Flash Memory
Manufactured using 110 nm MirrorBit® Process Technology, 3.0 Volt-only Read, Program, and Erase
Table 6.1 S29GL032N Ordering Options (Note 4)
S29GL032N Valid Combinations
Device
Number
Speed
Option
Package, Material,
& Temperature Range
Model
Number
TFI
01, 02
90
90
Package Description
Packing
Type
03, 04
TS048 (Note 2)
TSOP
TS056 (Note 2)
11
90
V1, V2
BFI
03, 04
0,2,3
01, 02, 03, 04
(Note 1)
S29GL032N
90
FFI
VBK048 (Note 3)
Fine-Pitch BGA
LAA064 (Note 3)
11
V1, V2
90
01, 02, 03, 04
Fortified BGA
DFI
11
LAE064 (Note 3)
V1, V2
Notes
1. Type 0 is standard. Specify others as required: TSOPs can be packed in
Types 0 and 3; BGAs can be packed in Types 0, 2, or 3.
2. TSOP package marking omits packing type designator from ordering
part number.
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this
device. Consult your local sales office to confirm availability of specific valid
combinations and to check on newly released combinations.
3. BGA package marking omits leading S29 and packing type designator
from ordering part number.
4. Contact local sales for availability for Leaded lead-frame parts.
October 29, 2008 S29GL-N_01_12
S29GL-N MirrorBit® Flash Family
15
D at a
7.
S hee t
Ordering Information–S29GL064N
S29GL064N Standard Products
Standard products are available in several packages and operating ranges. The order number (Valid
Combination) is formed by a combination of the following:
S29GL064N
90
T
F
I
02
2
PACKING TYPE
0 = Tray
2 = 7-inch Tape and Reel
3 = 13-inch Tape and Reel
MODEL NUMBER
01 = x8/x16, VCC = VIO = 2.7 – 3.6 V, Uniform sector, WP#/ACC = VIL protects highest addressed sector
02 = x8/x16, VCC = VIO = 2.7 – 3.6 V, Uniform sector, WP#/ACC = VIL protects lowest addressed sector
03 = x8/x16, VCC = 2.7 – 3.6 V, Top boot sector, WP#/ACC = VIL protects top two addressed sectors
04 = x8/x16, VCC = 2.7 – 3.6 V, Bottom boot sector, WP#/ACC = VIL protects bottom two addressed sectors
06 = x16, VCC = 2.7 – 3.6 V, Uniform sector, WP# = VIL protects highest addressed sector
07 = x16, VCC = 2.7 – 3.6 V, Uniform sector, WP# = VIL protects lowest addressed sector
V1 = x8/x16, VCC = 2.7 – 3.6 V, VIO = 1.65 - 3.6 V, Uniform sector, WP#/ACC = VIL protects highest addressed sector
V2 = x8/x16, VCC = 2.7 – 3.6 V, VIO = 1.65 - 3.6 V, Uniform sector, WP#/ACC = VIL protects lowest addressed sector
V6 = x16, VCC = 2.7 – 3.6 V, VIO = 1.65 - 3.6 V, Uniform sector, WP# = VIL protects highest addressed sector
V7 = x16, VCC = 2.7 – 3.6 V, VIO = 1.65 - 3.6 V, Uniform sector, WP# = VIL protects lowest addressed sector
TEMPERATURE RANGE
I = Industrial (–40°C to +85°C)
PACKAGE MATERIAL SET
A = Standard (Note 4)
F = Pb-Free
PACKAGE TYPE
B = Fine-pitch Ball-Grid Array Package
D = Fortified Ball-Grid Array Package(LAE064), 9 mm x 9 mm
F = Fortified Ball-Grid Array Package (LAA064), 13 mm x 11 mm
T = Thin Small Outline Package (TSOP) Standard Pinout
SPEED OPTION
See Product Selector Guide and Valid Combinations (90 = 90 ns, 11 = 110 ns)
DEVICE NUMBER/DESCRIPTION
S29GL064N, 64 Megabit Page-Mode Flash Memory
Manufactured using 110 nm MirrorBit® Process Technology, 3.0 Volt-only Read, Program, and Erase
7.1
Valid Combinations
S29GL064N Valid Combinations
Device Number
Speed
Option
Package, Material, &
Temperature Range
90
Package Description
Model Number
Packing Type
03, 04, 06, 07
TS048 (Note 2)
11
V6, V7
TSOP
TFI
90
01, 02
TS056 (Note 2)
11
S29GL064N
90
V1, V2
BFI
90
03, 04
0,2,3 (Note 1)
VBK048 (Note 3)
Fine-Pitch BGA
01, 02, 03, 04
FFI
LAA064 (Note 3)
11
V1, V2
Fortified BGA
90
01, 02, 03, 04
DFI
11
LAE064 (Note 3)
V1, V2
Notes
1. Type 0 is standard. Specify others as required: TSOPs can be packed in Types 0 and 3; BGAs can be packed in Types 0, 2, or 3.
2. TSOP package marking omits packing type designator from ordering part number.
3. BGA package marking omits leading S29 and packing type designator from ordering part number.
4. Contact local sales for availability for Leaded lead-frame parts.
16
S29GL-N MirrorBit® Flash Family
S29GL-N_01_12 October 29, 2008
Data
She et
8. Device Bus Operations
This section describes the requirements and use of the device bus operations, which are initiated through the
internal command register. The command register itself does not occupy any addressable memory location.
The register is a latch used to store the commands, along with the address and data information needed to
execute the command. The contents of the register serve as inputs to the internal state machine. The state
machine outputs dictate the function of the device. Table 8.1 lists the device bus operations, the inputs and
control levels they require, and the resulting output. The following subsections describe each of these
operations in further detail.
Table 8.1 Device Bus Operations
DQ8–DQ15
Operation
CE#
OE#
WE#
RESET#
WP#
ACC
DQ0–
DQ7
Addresses
BYTE#
= VIH
Read
L
L
H
H
X
X
AIN
DOUT
DOUT
Write (Program/Erase)
L
H
L
H
(Note 1)
X
AIN
(Note 2)
(Note 2)
BYTE#
= VIL
DQ8–DQ14
= High-Z,
DQ15 = A-1
L
H
L
H
(Note 1)
VHH
AIN
(Note 2)
(Note 2)
VCC ± 0.3V
X
X
VCC ± 0.3V
X
H
X
High-Z
High-Z
Output Disable
L
H
H
H
X
X
X
High-Z
High-Z
High-Z
Reset
X
X
X
L
X
X
X
High-Z
High-Z
High-Z
Accelerated Program
Standby
High-Z
Legend
L = Logic Low = VIL
H = Logic High = VIH
VHH = 11.5–12.5 V
X = Don’t Care
AIN = Address In
DIN = Data In
DOUT = Data Out
Notes
1. If WP# = VIL, the first or last sector remains protected (for uniform sector devices), and the two outer boot sectors are protected (for boot sector devices). If WP#
= VIH, the first or last sector, or the two outer boot sectors are protected or unprotected as determined by the method described in Write Protect (WP#). All
sectors are unprotected when shipped from the factory (The Secured Silicon Sector may be factory protected depending on version ordered.)
2. DIN or DOUT as required by command sequence, data polling, or sector protect algorithm (see Figure 10.5 on page 56).
8.1
Word/Byte Configuration
The BYTE# pin controls whether the device data I/O pins operate in the byte or word configuration. If the
BYTE# pin is set at logic 1, the device is in word configuration, DQ0–DQ15 are active and controlled by CE#,
WE# and OE#.
If the BYTE# pin is set at logic 0, the device is in byte configuration, and only data I/O pins DQ0–DQ7 are
active and controlled by CE#, WE# and OE#. The data I/O pins DQ8–DQ14 are tri-stated, and the DQ15 pin
is used as an input for the LSB (A-1) address function.
8.2
Requirements for Reading Array Data
All memories require access time to output array data. In a read operation, data is read from one memory
location at a time. Addresses are presented to the device in random order, and the propagation delay through
the device causes the data on its outputs to arrive with the address on its inputs.
The device defaults to reading array data after device power-up or hardware reset. To read data from the
memory array, the system must first assert a valid address on Amax-A0, while driving OE# and CE# to VIL.
WE# must remain at VIH. All addresses are latched on the falling edge of CE#. Data will appear on
DQ15-DQ0 after address access time (tACC), which is equal to the delay from stable addresses to valid output
data. The OE# signal must be driven to VIL. Data is output on DQ15-DQ0 pins after the access time (tOE) has
elapsed from the falling edge of OE#.
See Reading Array Data on page 41 for more information. Refer to Table 15.1 on page 64 for timing
specifications and the timing diagram. Refer to Table 13.1 on page 62 for the active current specification on
reading array data.
October 29, 2008 S29GL-N_01_12
S29GL-N MirrorBit® Flash Family
17
D at a
8.2.1
S hee t
Page Mode Read
The device is capable of fast page mode read and is compatible with the page mode Mask ROM read
operation. This mode provides faster read access speed for random locations within a page. The page size of
the device is 8 words/16 bytes. The appropriate page is selected by the higher address bits A(max)–A3.
Address bits A2–A0 in word mode (A2–A-1 in byte mode) determine the specific word within a page. This is
an asynchronous operation; the microprocessor supplies the specific word location.
The random or initial page access is equal to tACC or tCE and subsequent page read accesses (as long as the
locations specified by the microprocessor falls within that page) is equivalent to tPACC. When CE# is
deasserted and reasserted for a subsequent access, the access time is tACC or tCE. Fast page mode
accesses are obtained by keeping the read-page addresses constant and changing the intra-read page
addresses.
8.3
Writing Commands/Command Sequences
To write a command or command sequence (which includes programming data to the device and erasing
sectors of memory), the system must drive WE# and CE# to VIL, and OE# to VIH.
The device features an Unlock Bypass mode to facilitate faster programming. Once the device enters the
Unlock Bypass mode, only two write cycles are required to program a word, instead of four. The Word
Program Command Sequence on page 42 contains details on programming data to the device using both
standard and Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sectors, or the entire device. Tables 8.2 – 8.8 indicate the
address space that each sector occupies.
Refer to the DC Characteristics table for the active current specification for the write mode. The AC
Characteristics section contains timing specification tables and timing diagrams for write operations.
8.3.1
Write Buffer
Write Buffer Programming allows the system write to a maximum of 16 words/32 bytes in one programming
operation. This results in faster effective programming time than the standard programming algorithms.
8.3.2
Accelerated Program Operation
The device offers accelerated program operations through the ACC function. This is one of two functions
provided by the WP#/ACC or ACC pin, depending on model number. This function is primarily intended to
allow faster manufacturing throughput at the factory.
If the system asserts VHH on this pin, the device automatically enters the Unlock Bypass mode, temporarily
unprotects any protected sectors, and uses the higher voltage on the pin to reduce the time required for
program operations. The system would use a two-cycle program command sequence as required by the
Unlock Bypass mode. Removing VHH from the WP#/ACC or ACC pin, depending on model number, returns
the device to normal operation. Note that the WP#/ACC or ACC pin must not be at VHH for operations other
than accelerated programming, or device damage may result. WP# contains an internal pull-up; when
unconnected, WP# is at VIH.
8.3.3
Autoselect Functions
If the system writes the autoselect command sequence, the device enters the autoselect mode. The system
can then read autoselect codes from the internal register (which is separate from the memory array) on
DQ7-DQ0. Standard read cycle timings (tACC) apply in this mode. Refer to Autoselect Mode on page 29 and
Autoselect Command Sequence on page 42 for more information.
18
S29GL-N MirrorBit® Flash Family
S29GL-N_01_12 October 29, 2008
Data
8.4
She et
Standby Mode
When the system is not reading or writing to the device, it can be placed in to standby mode. In this mode,
current consumption is greatly reduced, and the outputs are placed in the high impedance state, independent
of the OE# input.
The device enters the CMOS standby mode when the CE# and RESET# pins are both held at VIO ± 0.3 V.
(Note that this is a more restricted voltage range than VIH.) If CE# and RESET# are held at VIH, but not within
VIO ± 0.3 V, the device is in the standby mode, but the standby current is greater. The device requires
standard access time (tACC/tCE) for read access when the device is in either of these standby modes, before
it is ready to read data.
If the device is deselected during erasure or programming, the device draws active current until the operation
is completed.
Refer to the DC Characteristics on page 62 for the standby current specification.
8.5
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables
this mode when addresses remain stable for tACC + 30 ns. The automatic sleep mode is independent of the
CE#, WE#, and OE# control signals. Standard address access timings provide new data when addresses are
changed. While in sleep mode, output data is latched and always available to the system. Refer to the DC
Characteristics on page 62 for the automatic sleep mode current specification.
8.6
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of resetting the device to reading array data. When the
RESET# pin is driven low for at least a period of tRP, the device immediately terminates any operation in
progress, output pins go to Hi-Z, and all read/write commands are ignored for the duration of the RESET#
pulse. Program/Erase operations that were interrupted should be reinitiated once the device is ready to
accept another command sequence, to ensure data integrity.
Current is reduced for the duration of the RESET# pulse. When RESET# is held at VSS ±0.3 V, the device
draws CMOS standby current (ICC5).
The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash
memory, enabling the system to read the boot-up firmware from the Flash memory.
Refer to the AC Characteristics tables for RESET# parameters and to Figure 15.4 on page 66 for the timing
diagram.
8.7
Output Disable Mode
When the OE# input is at VIH, output from the device is disabled. The output pins are placed in a high
impedance state.
October 29, 2008 S29GL-N_01_12
S29GL-N MirrorBit® Flash Family
19
D at a
S hee t
Table 8.2 S29GL032N (Models 01, 02, V1, V2) Sector Addresses
Sector
Size
(KB/
Sector A20-A15 Kwords)
20
8-bit
Address
Range
16-bit
Address
Range
Sector
A20-A15
Sector
Size
(KB/
Kwords)
8-bit
Address
Range
16-bit
Address
Range
SA0
000000
64/32
000000h–00FFFFh
000000h–007FFFh
SA32
100000
64/32
200000h–20FFFFh
100000h–107FFFh
SA1
000001
64/32
010000h–01FFFFh
008000h–00FFFFh
SA33
100001
64/32
210000h–21FFFFh
108000h–10FFFFh
SA2
000010
64/32
020000h–02FFFFh
010000h–017FFFh
SA34
100010
64/32
220000h–22FFFFh
110000h–117FFFh
SA3
000011
64/32
030000h–03FFFFh
018000h–01FFFFh
SA35
100011
64/32
230000h–23FFFFh
118000h–11FFFFh
SA4
000100
64/32
040000h–04FFFFh
020000h–027FFFh
SA36
100100
64/32
240000h–24FFFFh
120000h–127FFFh
SA5
000101
64/32
050000h–05FFFFh
028000h–02FFFFh
SA37
100101
64/32
250000h–25FFFFh
128000h–12FFFFh
SA6
000110
64/32
060000h–06FFFFh
030000h–037FFFh
SA38
100110
64/32
260000h–26FFFFh
130000h–137FFFh
SA7
000111
64/32
070000h–07FFFFh
038000h–03FFFFh
SA39
100111
64/32
270000h–27FFFFh
138000h–13FFFFh
SA8
001000
64/32
080000h–08FFFFh
040000h–047FFFh
SA40
101000
64/32
280000h–28FFFFh
140000h–147FFFh
SA9
001001
64/32
090000h–09FFFFh
048000h–04FFFFh
SA41
101001
64/32
290000h–29FFFFh
148000h–14FFFFh
SA10
001010
64/32
0A0000h–0AFFFFh
050000h–057FFFh
SA42
101010
64/32
2A0000h–2AFFFFh
150000h–157FFFh
SA11
001011
64/32
0B0000h–0BFFFFh
058000h–05FFFFh
SA43
101011
64/32
2B0000h–2BFFFFh
158000h–15FFFFh
SA12
001100
64/32
0C0000h–0CFFFFh
060000h–067FFFh
SA44
101100
64/32
2C0000h–2CFFFFh
160000h–167FFFh
SA13
001101
64/32
0D0000h–0DFFFFh
068000h–06FFFFh
SA45
101101
64/32
2D0000h–2DFFFFh
168000h–16FFFFh
SA14
001110
64/32
0E0000h–0EFFFFh
070000h–077FFFh
SA46
101110
64/32
2E0000h–2EFFFFh
170000h–177FFFh
SA15
001111
64/32
0F0000h–0FFFFFh
078000h–07FFFFh
SA47
101111
64/32
2F0000h–2FFFFFh
178000h–17FFFFh
SA16
010000
64/32
100000h–10FFFFh
080000h–087FFFh
SA48
110000
64/32
300000h–30FFFFh
180000h–187FFFh
SA17
010001
64/32
110000h–11FFFFh
088000h–08FFFFh
SA49
110001
64/32
310000h–31FFFFh
188000h–18FFFFh
SA18
010010
64/32
120000h–12FFFFh
090000h–097FFFh
SA50
110010
64/32
320000h–32FFFFh
190000h–197FFFh
SA19
010011
64/32
130000h–13FFFFh
098000h–09FFFFh
SA51
110011
64/32
330000h–33FFFFh
198000h–19FFFFh
SA20
010100
64/32
140000h–14FFFFh
0A0000h–0A7FFFh
SA52
110100
64/32
340000h–34FFFFh
1A0000h–1A7FFFh
SA21
010101
64/32
150000h–15FFFFh
0A8000h–0AFFFFh
SA53
110101
64/32
350000h–35FFFFh
1A8000h–1AFFFFh
SA22
010110
64/32
160000h–16FFFFh
0B0000h–0B7FFFh
SA54
110110
64/32
360000h–36FFFFh
1B0000h–1B7FFFh
SA23
010111
64/32
170000h–17FFFFh
0B8000h–0BFFFFh
SA55
110111
64/32
370000h–37FFFFh
1B8000h–1BFFFFh
SA24
011000
64/32
180000h–18FFFFh
0C0000h–0C7FFFh
SA56
111000
64/32
380000h–38FFFFh
1C0000h–1C7FFFh
SA25
011001
64/32
190000h–19FFFFh
0C8000h–0CFFFFh
SA57
111001
64/32
390000h–39FFFFh
1C8000h–1CFFFFh
SA26
011010
64/32
1A0000h–1AFFFFh
0D0000h–0D7FFFh
SA58
111010
64/32
3A0000h–3AFFFFh
1D0000h–1D7FFFh
SA27
011011
64/32
1B0000h–1BFFFFh
0D8000h–0DFFFFh
SA59
111011
64/32
3B0000h–3BFFFFh
1D8000h–1DFFFFh
SA28
011100
64/32
1C0000h–1CFFFFh
0E0000h–0E7FFFh
SA60
111100
64/32
3C0000h–3CFFFFh
1E0000h–1E7FFFh
SA29
011101
64/32
1D0000h–1DFFFFh
0E8000h–0EFFFFh
SA61
111101
64/32
3D0000h–3DFFFFh
1E8000h–1EFFFFh
SA30
011110
64/32
1E0000h–1EFFFFh
0F0000h–0F7FFFh
SA62
111110
64/32
3E0000h–3EFFFFh
1F0000h–1F7FFFh
SA31
011111
64/32
1F0000h–1FFFFFh
0F8000h–0FFFFFh
SA63
111111
64/32
3F0000h–3FFFFFh
1F8000h–1FFFFFh
S29GL-N MirrorBit® Flash Family
S29GL-N_01_12 October 29, 2008
Data
She et
Table 8.3 S29GL032N (Model 03) Top Boot Sector Addresses
Sector
Size
(KB/
Kwords)
Sector
A20–A12
Sector
Size
(KB/
Kwords)
Sector
A20–A12
SA0
000000xxx
64/32
000000h–00FFFFh
00000h–07FFFh
SA36
100100xxx
64/32
240000h–24FFFFh
120000h–127FFFh
SA1
000001xxx
64/32
010000h–01FFFFh
08000h–0FFFFh
SA37
100101xxx
64/32
250000h–25FFFFh
128000h–12FFFFh
8-bit
Address
Range
16-bit
Address
Range
8-bit
Address
Range
16-bit
Address
Range
SA2
000010xxx
64/32
020000h–02FFFFh
10000h–17FFFh
SA38
100110xxx
64/32
260000h–26FFFFh
130000h–137FFFh
SA3
000011xxx
64/32
030000h–03FFFFh
18000h–1FFFFh
SA39
100111xxx
64/32
270000h–27FFFFh
138000h–13FFFFh
SA4
000100xxx
64/32
040000h–04FFFFh
20000h–27FFFh
SA40
101000xxx
64/32
280000h–28FFFFh
140000h–147FFFh
SA5
000101xxx
64/32
050000h–05FFFFh
28000h–2FFFFh
SA41
101001xxx
64/32
290000h–29FFFFh
148000h–14FFFFh
SA6
000110xxx
64/32
060000h–06FFFFh
30000h–37FFFh
SA42
101010xxx
64/32
2A0000h–2AFFFFh
150000h–157FFFh
SA7
000111xxx
64/32
070000h–07FFFFh
38000h–3FFFFh
SA43
101011xxx
64/32
2B0000h–2BFFFFh
158000h–15FFFFh
SA8
001000xxx
64/32
080000h–08FFFFh
40000h–47FFFh
SA44
101100xxx
64/32
2C0000h–2CFFFFh
160000h–167FFFh
SA9
001001xxx
64/32
090000h–09FFFFh
48000h–4FFFFh
SA45
101101xxx
64/32
2D0000h–2DFFFFh
168000h–16FFFFh
SA10
001010xxx
64/32
0A0000h–0AFFFFh
50000h–57FFFh
SA46
101110xxx
64/32
2E0000h–2EFFFFh
170000h–177FFFh
SA11
001011xxx
64/32
0B0000h–0BFFFFh
58000h–5FFFFh
SA47
101111xxx
64/32
2F0000h–2FFFFFh
178000h–17FFFFh
SA12
001100xxx
64/32
0C0000h–0CFFFFh
60000h–67FFFh
SA48
110000xxx
64/32
300000h–30FFFFh
180000h–187FFFh
SA13
001101xxx
64/32
0D0000h–0DFFFFh
68000h–6FFFFh
SA49
110001xxx
64/32
310000h–31FFFFh
188000h–18FFFFh
SA14
001110xxx
64/32
0E0000h–0EFFFFh
70000h–77FFFh
SA50
110010xxx
64/32
320000h–32FFFFh
190000h–197FFFh
SA15
001111xxx
64/32
0F0000h–0FFFFFh
78000h–7FFFFh
SA51
110011xxx
64/32
330000h–33FFFFh
198000h–19FFFFh
SA16
010000xxx
64/32
100000h–10FFFFh
80000h–87FFFh
SA52
100100xxx
64/32
340000h–34FFFFh
1A0000h–1A7FFFh
SA17
010001xxx
64/32
110000h–11FFFFh
88000h–8FFFFh
SA53
110101xxx
64/32
350000h–35FFFFh
1A8000h–1AFFFFh
SA18
010010xxx
64/32
120000h–12FFFFh
90000h–97FFFh
SA54
110110xxx
64/32
360000h–36FFFFh
1B0000h–1B7FFFh
SA19
010011xxx
64/32
130000h–13FFFFh
98000h–9FFFFh
SA55
110111xxx
64/32
370000h–37FFFFh
1B8000h–1BFFFFh
SA20
010100xxx
64/32
140000h–14FFFFh
A0000h–A7FFFh
SA56
111000xxx
64/32
380000h–38FFFFh
1C0000h–1C7FFFh
SA21
010101xxx
64/32
150000h–15FFFFh
A8000h–AFFFFh
SA57
111001xxx
64/32
390000h–39FFFFh
1C8000h–1CFFFFh
SA22
010110xxx
64/32
160000h–16FFFFh
B0000h–B7FFFh
SA58
111010xxx
64/32
3A0000h–3AFFFFh
1D0000h–1D7FFFh
SA23
010111xxx
64/32
170000h–17FFFFh
B8000h–BFFFFh
SA59
111011xxx
64/32
3B0000h–3BFFFFh
1D8000h–1DFFFFh
SA24
011000xxx
64/32
180000h–18FFFFh
C0000h–C7FFFh
SA60
111100xxx
64/32
3C0000h–3CFFFFh
1E0000h–1E7FFFh
SA25
011001xxx
64/32
190000h–19FFFFh
C8000h–CFFFFh
SA61
111101xxx
64/32
3D0000h–3DFFFFh
1E8000h–1EFFFFh
SA26
011010xxx
64/32
1A0000h–1AFFFFh
D0000h–D7FFFh
SA62
111110xxx
64/32
3E0000h–3EFFFFh
1F0000h–1F7FFFh
SA27
011011xxx
64/32
1B0000h–1BFFFFh
D8000h–DFFFFh
SA63
111111000
8/4
3F0000h–3F1FFFh
1F8000h–1F8FFFh
SA28
011100xxx
64/32
1C0000h–1CFFFFh
E0000h–E7FFFh
SA64
111111001
8/4
3F2000h–3F3FFFh
1F9000h–1F9FFFh
SA29
011101xxx
64/32
1D0000h–1DFFFFh
E8000h–EFFFFh
SA65
111111010
8/4
3F4000h–3F5FFFh
1FA000h–1FAFFFh
SA30
011110xxx
64/32
1E0000h–1EFFFFh
F0000h–F7FFFh
SA66
111111011
8/4
3F6000h–3F7FFFh
1FB000h–1FBFFFh
SA31
011111xxx
64/32
1F0000h–1FFFFFh
F8000h–FFFFFh
SA67
111111100
8/4
3F8000h–3F9FFFh
1FC000h–1FCFFFh
SA32
100000xxx
64/32
200000h–20FFFFh
100000h–107FFFh
SA68
111111101
8/4
3FA000h–3FBFFFh
1FD000h–1FDFFFh
SA33
100001xxx
64/32
210000h–21FFFFh
108000h–10FFFFh
SA69
111111110
8/4
3FC000h–3FDFFFh
1FE000h–1FEFFFh
SA34
100010xxx
64/32
220000h–22FFFFh
110000h–117FFFh
SA70
111111111
8/4
3FE000h–3FFFFFh
1FF000h–1FFFFFh
SA35
100011xxx
64/32
230000h–23FFFFh
118000h–11FFFFh
October 29, 2008 S29GL-N_01_12
S29GL-N MirrorBit® Flash Family
21
D at a
S hee t
Table 8.4 S29GL032N (Model 04) Bottom Boot Sector Addresses
Sector
Size
(KB/
Kwords)
Sector
A20–A12
Sector
Size
(KB/
Kwords)
Sector
A20–A12
SA0
000000000
8/4
000000h–001FFFh
00000h–00FFFh
SA35
011100xxx
64/32
1C0000h–1CFFFFh
E0000h–E7FFFh
SA1
000000001
8/4
002000h–003FFFh
01000h–01FFFh
SA36
011101xxx
64/32
1D0000h–1DFFFFh
E8000h–EFFFFh
SA2
000000010
8/4
004000h–005FFFh
02000h–02FFFh
SA37
011110xxx
64/32
1E0000h–1EFFFFh
F0000h–F7FFFh
SA3
000000011
8/4
006000h–007FFFh
03000h–03FFFh
SA38
011111xxx
64/32
1F0000h–1FFFFFh
F8000h–FFFFFh
SA4
000000100
8/4
008000h–009FFFh
04000h–04FFFh
SA39
100000xxx
64/32
200000h–20FFFFh
100000h–107FFFh
SA5
000000101
8/4
00A000h–00BFFFh
05000h–05FFFh
SA40
100001xxx
64/32
210000h–21FFFFh
108000h–10FFFFh
SA6
000000110
8/4
00C000h–00DFFFh
06000h–06FFFh
SA41
100010xxx
64/32
220000h–22FFFFh
110000h–117FFFh
SA7
000000111
8/4
00E000h–00FFFFh
07000h–07FFFh
SA42
100011xxx
64/32
230000h–23FFFFh
118000h–11FFFFh
SA8
000001xxx
64/32
010000h–01FFFFh
08000h–0FFFFh
SA43
100100xxx
64/32
240000h–24FFFFh
120000h–127FFFh
SA9
000010xxx
64/32
020000h–02FFFFh
10000h–17FFFh
SA44
100101xxx
64/32
250000h–25FFFFh
128000h–12FFFFh
SA10
000011xxx
64/32
030000h–03FFFFh
18000h–1FFFFh
SA45
100110xxx
64/32
260000h–26FFFFh
130000h–137FFFh
SA11
000100xxx
64/32
040000h–04FFFFh
20000h–27FFFh
SA46
100111xxx
64/32
270000h–27FFFFh
138000h–13FFFFh
SA12
000101xxx
64/32
050000h–05FFFFh
28000h–2FFFFh
SA47
101000xxx
64/32
280000h–28FFFFh
140000h–147FFFh
SA13
000110xxx
64/32
060000h–06FFFFh
30000h–37FFFh
SA48
101001xxx
64/32
290000h–29FFFFh
148000h–14FFFFh
SA14
000111xxx
64/32
070000h–07FFFFh
38000h–3FFFFh
SA49
101010xxx
64/32
2A0000h–2AFFFFh
150000h–157FFFh
SA15
001000xxx
64/32
080000h–08FFFFh
40000h–47FFFh
SA50
101011xxx
64/32
2B0000h–2BFFFFh
158000h–15FFFFh
SA16
001001xxx
64/32
090000h–09FFFFh
48000h–4FFFFh
SA51
101100xxx
64/32
2C0000h–2CFFFFh
160000h–167FFFh
SA17
001010xxx
64/32
0A0000h–0AFFFFh
50000h–57FFFh
SA52
101101xxx
64/32
2D0000h–2DFFFFh
168000h–16FFFFh
8-bit
Address
Range
16-bit
Address
Range
8-bit
Address
Range
16-bit
Address
Range
SA18
001011xxx
64/32
0B0000h–0BFFFFh
58000h–5FFFFh
SA53
101110xxx
64/32
2E0000h–2EFFFFh
170000h–177FFFh
SA19
001100xxx
64/32
0C0000h–0CFFFFh
60000h–67FFFh
SA54
101111xxx
64/32
2F0000h–2FFFFFh
178000h–17FFFFh
SA20
001101xxx
64/32
0D0000h–0DFFFFh
68000h–6FFFFh
SA55
110000xxx
64/32
300000h–30FFFFh
180000h–187FFFh
SA21
001110xxx
64/32
0E0000h–0EFFFFh
70000h–77FFFh
SA56
110001xxx
64/32
310000h–31FFFFh
188000h–18FFFFh
SA22
001111xxx
64/32
0F0000h–0FFFFFh
78000h–7FFFFh
SA57
110010xxx
64/32
320000h–32FFFFh
190000h–197FFFh
SA23
010000xxx
64/32
100000h–10FFFFh
80000h–87FFFh
SA58
110011xxx
64/32
330000h–33FFFFh
198000h–19FFFFh
SA24
010001xxx
64/32
110000h–11FFFFh
88000h–8FFFFh
SA59
110100xxx
64/32
340000h–34FFFFh
1A0000h–1A7FFFh
SA25
010010xxx
64/32
120000h–12FFFFh
90000h–97FFFh
SA60
110101xxx
64/32
350000h–35FFFFh
1A8000h–1AFFFFh
SA26
010011xxx
64/32
130000h–13FFFFh
98000h–9FFFFh
SA61
110110xxx
64/32
360000h–36FFFFh
1B0000h–1B7FFFh
SA27
010100xxx
64/32
140000h–14FFFFh
A0000h–A7FFFh
SA62
110111xxx
64/32
370000h–37FFFFh
1B8000h–1BFFFFh
SA28
010101xxx
64/32
150000h–15FFFFh
A8000h–AFFFFh
SA63
111000xxx
64/32
380000h–38FFFFh
1C0000h–1C7FFFh
SA29
010110xxx
64/32
160000h–16FFFFh
B0000h–B7FFFh
SA64
111001xxx
64/32
390000h–39FFFFh
1C8000h–1CFFFFh
SA30
010111xxx
64/32
170000h–17FFFFh
B8000h–BFFFFh
SA65
111010xxx
64/32
3A0000h–3AFFFFh
1D0000h–1D7FFFh
SA31
011000xxx
64/32
180000h–18FFFFh
C0000h–C7FFFh
SA66
111011xxx
64/32
3B0000h–3BFFFFh
1D8000h–1DFFFFh
SA32
011001xxx
64/32
190000h–19FFFFh
C8000h–CFFFFh
SA67
111100xxx
64/32
3C0000h–3CFFFFh
1E0000h–1E7FFFh
SA33
011010xxx
64/32
1A0000h–1AFFFFh
D0000h–D7FFFh
SA68
111101xxx
64/32
3D0000h–3DFFFFh
1E8000h–1EFFFFh
SA34
011011xxx
64/32
1B0000h–1BFFFFh
D8000h–DFFFFh
SA69
111110xxx
64/32
3E0000h–3EFFFFh
1F0000h–1F7FFFh
SA70
111111xxx
64/32
3F0000h–3FFFFFh
1F8000h–1FFFFFh
22
S29GL-N MirrorBit® Flash Family
S29GL-N_01_12 October 29, 2008
Data
She et
Table 8.5 S29GL064N (Models 01, 02, V1, V2) Sector Addresses (Sheet 1 of 2)
Sector
Size
(KB/
Kwords)
Sector
A21–A15
Sector
Size
(KB/
Kwords)
SA0
0000000
64/32
000000h–00FFFFh
000000h–007FFFh
SA64
1000000
64/32
400000h–40FFFFh
200000h–207FFFh
SA1
0000001
64/32
010000h–01FFFFh
008000h–00FFFFh
SA65
1000001
64/32
410000h–41FFFFh
208000h–20FFFFh
8-bit
Address
Range
16-bit
Address
Range
Sector
A21–A15
8-bit
Address
Range
16-bit
Address
Range
SA2
0000010
64/32
020000h–02FFFFh
010000h–017FFFh
SA66
1000010
64/32
420000h–42FFFFh
210000h–217FFFh
SA3
0000011
64/32
030000h–03FFFFh
018000h–01FFFFh
SA67
1000011
64/32
430000h–43FFFFh
218000h–21FFFFh
SA4
0000100
64/32
040000h–04FFFFh
020000h–027FFFh
SA68
1000100
64/32
440000h–44FFFFh
220000h–227FFFh
SA5
0000101
64/32
050000h–05FFFFh
028000h–02FFFFh
SA69
1000101
64/32
450000h–45FFFFh
228000h–22FFFFh
SA6
0000110
64/32
060000h–06FFFFh
030000h–037FFFh
SA70
1000110
64/32
460000h–46FFFFh
230000h–237FFFh
SA7
0000111
64/32
070000h–07FFFFh
038000h–03FFFFh
SA71
1000111
64/32
470000h–47FFFFh
238000h–23FFFFh
SA8
0001000
64/32
080000h–08FFFFh
040000h–047FFFh
SA72
1001000
64/32
480000h–48FFFFh
240000h–247FFFh
SA9
0001001
64/32
090000h–09FFFFh
048000h–04FFFFh
SA73
1001001
64/32
490000h–49FFFFh
248000h–24FFFFh
SA10
0001010
64/32
0A0000h–0AFFFFh
050000h–057FFFh
SA74
1001010
64/32
4A0000h–4AFFFFh
250000h–257FFFh
SA11
0001011
64/32
0B0000h–0BFFFFh
058000h–05FFFFh
SA75
1001011
64/32
4B0000h–4BFFFFh
258000h–25FFFFh
SA12
0001100
64/32
0C0000h–0CFFFFh
060000h–067FFFh
SA76
1001100
64/32
4C0000h–4CFFFFh
260000h–267FFFh
SA13
0001101
64/32
0D0000h–0DFFFFh
068000h–06FFFFh
SA77
1001101
64/32
4D0000h–4DFFFFh
268000h–26FFFFh
SA14
0001110
64/32
0E0000h–0EFFFFh
070000h–077FFFh
SA78
1001110
64/32
4E0000h–4EFFFFh
270000h–277FFFh
SA15
0001111
64/32
0F0000h–0FFFFFh
078000h–07FFFFh
SA79
1001111
64/32
4F0000h–4FFFFFh
278000h–27FFFFh
SA16
0010000
64/32
100000h–10FFFFh
080000h–087FFFh
SA80
1010000
64/32
500000h–50FFFFh
280000h–287FFFh
SA17
0010001
64/32
110000h–11FFFFh
088000h–08FFFFh
SA81
1010001
64/32
510000h–51FFFFh
288000h–28FFFFh
SA18
0010010
64/32
120000h–12FFFFh
090000h–097FFFh
SA82
1010010
64/32
520000h–52FFFFh
290000h–297FFFh
SA19
0010011
64/32
130000h–13FFFFh
098000h–09FFFFh
SA83
1010011
64/32
530000h–53FFFFh
298000h–29FFFFh
SA20
0010100
64/32
140000h–14FFFFh
0A0000h–0A7FFFh
SA84
1010100
64/32
540000h–54FFFFh
2A0000h–2A7FFFh
SA21
0010101
64/32
150000h–15FFFFh
0A8000h–0AFFFFh
SA85
1010101
64/32
550000h–55FFFFh
2A8000h–2AFFFFh
SA22
0010110
64/32
160000h–16FFFFh
0B0000h–0B7FFFh
SA86
1010110
64/32
560000h–56FFFFh
2B0000h–2B7FFFh
SA23
0010111
64/32
170000h–17FFFFh
0B8000h–0BFFFFh
SA87
1010111
64/32
570000h–57FFFFh
2B8000h–2BFFFFh
SA24
0011000
64/32
180000h–18FFFFh
0C0000h–0C7FFFh
SA88
1011000
64/32
580000h–58FFFFh
2C0000h–2C7FFFh
SA25
0011001
64/32
190000h–19FFFFh
0C8000h–0CFFFFh
SA89
1011001
64/32
590000h–59FFFFh
2C8000h–2CFFFFh
SA26
0011010
64/32
1A0000h–1AFFFFh
0D0000h–0D7FFFh
SA90
1011010
64/32
5A0000h–5AFFFFh
2D0000h–2D7FFFh
SA27
0011011
64/32
1B0000h–1BFFFFh
0D8000h–0DFFFFh
SA91
1011011
64/32
5B0000h–5BFFFFh
2D8000h–2DFFFFh
SA28
0011100
64/32
1C0000h–1CFFFFh
0E0000h–0E7FFFh
SA92
1011100
64/32
5C0000h–5CFFFFh
2E0000h–2E7FFFh
SA29
0011101
64/32
1D0000h–1DFFFFh
0E8000h–0EFFFFh
SA93
1011101
64/32
5D0000h–5DFFFFh
2E8000h–2EFFFFh
SA30
0011110
64/32
1E0000h–1EFFFFh
0F0000h–0F7FFFh
SA94
1011110
64/32
5E0000h–5EFFFFh
2F0000h–2F7FFFh
SA31
0011111
64/32
1F0000h–1FFFFFh
0F8000h–0FFFFFh
SA95
1011111
64/32
5F0000h–5FFFFFh
2F8000h–2FFFFFh
SA32
0100000
64/32
200000h–20FFFFh
100000h–107FFFh
SA96
1100000
64/32
600000h–60FFFFh
300000h–307FFFh
SA33
0100001
64/32
210000h–21FFFFh
108000h–10FFFFh
SA97
1100001
64/32
610000h–61FFFFh
308000h–30FFFFh
SA34
0100010
64/32
220000h–22FFFFh
110000h–117FFFh
SA98
1100010
64/32
620000h–62FFFFh
310000h–317FFFh
SA35
0100011
64/32
230000h–23FFFFh
118000h–11FFFFh
SA99
1100011
64/32
630000h–63FFFFh
318000h–31FFFFh
SA36
0100100
64/32
240000h–24FFFFh
120000h–127FFFh
SA100
1100100
64/32
640000h–64FFFFh
320000h–327FFFh
SA37
0100101
64/32
250000h–25FFFFh
128000h–12FFFFh
SA101
1100101
64/32
650000h–65FFFFh
328000h–32FFFFh
SA38
0100110
64/32
260000h–26FFFFh
130000h–137FFFh
SA102
1100110
64/32
660000h–66FFFFh
330000h–337FFFh
SA39
0100111
64/32
270000h–27FFFFh
138000h–13FFFFh
SA103
1100111
64/32
670000h–67FFFFh
338000h–33FFFFh
SA40
0101000
64/32
280000h–28FFFFh
140000h–147FFFh
SA104
1101000
64/32
680000h–68FFFFh
340000h–347FFFh
SA41
0101001
64/32
290000h–29FFFFh
148000h–14FFFFh
SA105
1101001
64/32
690000h–69FFFFh
348000h–34FFFFh
SA42
0101010
64/32
2A0000h–2AFFFFh
150000h–157FFFh
SA106
1101010
64/32
6A0000h–6AFFFFh
350000h–357FFFh
SA43
0101011
64/32
2B0000h–2BFFFFh
158000h–15FFFFh
SA107
1101011
64/32
6B0000h–6BFFFFh
358000h–35FFFFh
SA44
0101100
64/32
2C0000h–2CFFFFh
160000h–167FFFh
SA108
1101100
64/32
6C0000h–6CFFFFh
360000h–367FFFh
SA45
0101101
64/32
2D0000h–2DFFFFh
168000h–16FFFFh
SA109
1101101
64/32
6D0000h–6DFFFFh
368000h–36FFFFh
October 29, 2008 S29GL-N_01_12
S29GL-N MirrorBit® Flash Family
23
D at a
S hee t
Table 8.5 S29GL064N (Models 01, 02, V1, V2) Sector Addresses (Sheet 2 of 2)
Sector
A21–A15
Sector
Size
(KB/
Kwords)
Sector
A21–A15
Sector
Size
(KB/
Kwords)
SA46
0101110
64/32
2E0000h–2EFFFFh
170000h–177FFFh
SA110
1101110
64/32
6E0000h–6EFFFFh
370000h–377FFFh
SA47
0101111
64/32
2F0000h–2FFFFFh
178000h–17FFFFh
SA111
1101111
64/32
6F0000h–6FFFFFh
378000h–37FFFFh
SA48
0110000
64/32
300000h–30FFFFh
180000h–187FFFh
SA112
1110000
64/32
700000h–70FFFFh
380000h–387FFFh
SA49
0110001
64/32
310000h–31FFFFh
188000h–18FFFFh
SA113
1110001
64/32
710000h–71FFFFh
388000h–38FFFFh
SA50
0110010
64/32
320000h–32FFFFh
190000h–197FFFh
SA114
1110010
64/32
720000h–72FFFFh
390000h–397FFFh
SA51
0110011
64/32
330000h–33FFFFh
198000h–19FFFFh
SA115
1110011
64/32
730000h–73FFFFh
398000h–39FFFFh
SA52
0110100
64/32
340000h–34FFFFh
1A0000h–1A7FFFh
SA116
1110100
64/32
740000h–74FFFFh
3A0000h–3A7FFFh
SA53
0110101
64/32
350000h–35FFFFh
1A8000h–1AFFFFh
SA117
1110101
64/32
750000h–75FFFFh
3A8000h–3AFFFFh
SA54
0110110
64/32
360000h–36FFFFh
1B0000h–1B7FFFh
SA118
1110110
64/32
760000h–76FFFFh
3B0000h–3B7FFFh
SA55
0110111
64/32
370000h–37FFFFh
1B8000h–1BFFFFh
SA119
1110111
64/32
770000h–77FFFFh
3B8000h–3BFFFFh
SA56
0111000
64/32
380000h–38FFFFh
1C0000h–1C7FFFh
SA120
1111000
64/32
780000h–78FFFFh
3C0000h–3C7FFFh
SA57
0111001
64/32
390000h–39FFFFh
1C8000h–1CFFFFh
SA121
1111001
64/32
790000h–79FFFFh
3C8000h–3CFFFFh
SA58
0111010
64/32
3A0000h–3AFFFFh
1D0000h–1D7FFFh
SA122
1111010
64/32
7A0000h–7AFFFFh
3D0000h–3D7FFFh
SA59
0111011
64/32
3B0000h–3BFFFFh
1D8000h–1DFFFFh
SA123
1111011
64/32
7B0000h–7BFFFFh
3D8000h–3DFFFFh
SA60
0111100
64/32
3C0000h–3CFFFFh
1E0000h–1E7FFFh
SA124
1111100
64/32
7C0000h–7CFFFFh
3E0000h–3E7FFFh
SA61
0111101
64/32
3D0000h–3DFFFFh
1E8000h–1EFFFFh
SA125
1111101
64/32
7D0000h–7DFFFFh
3E8000h–3EFFFFh
8-bit
Address
Range
16-bit
Address
Range
8-bit
Address
Range
16-bit
Address
Range
SA62
0111110
64/32
3E0000h–3EFFFFh
1F0000h–1F7FFFh
SA126
1111110
64/32
7E0000h–7EFFFFh
3F0000h–3F7FFFh
SA63
0111111
64/32
3F0000h–3FFFFFh
1F8000h–1FFFFFh
SA127
1111111
64/32
7F0000h–7FFFFFh
3F8000h–3FFFFFh
Table 8.6 S29GL064N (Model 03) Top Boot Sector Addresses (Sheet 1 of 2)
Sector
Size
(KB/
Kwords)
Sector
A21–A12
Sector
Size
(KB/
Kwords)
Sector
A21–A12
SA0
0000000xxx
64/32
000000h–00FFFFh
000000h–007FFFh
SA68
1000100xxx
64/32
440000h–44FFFFh
220000h–227FFFh
SA1
0000001xxx
64/32
010000h–01FFFFh
008000h–00FFFFh
SA69
1000101xxx
64/32
450000h–45FFFFh
228000h–22FFFFh
SA2
0000010xxx
64/32
020000h–02FFFFh
010000h–017FFFh
SA70
1000110xxx
64/32
460000h–46FFFFh
230000h–237FFFh
SA3
0000011xxx
64/32
030000h–03FFFFh
018000h–01FFFFh
SA71
1000111xxx
64/32
470000h–47FFFFh
238000h–23FFFFh
SA4
0000100xxx
64/32
040000h–04FFFFh
020000h–027FFFh
SA72
1001000xxx
64/32
480000h–48FFFFh
240000h–247FFFh
SA5
0000101xxx
64/32
050000h–05FFFFh
028000h–02FFFFh
SA73
1001001xxx
64/32
490000h–49FFFFh
248000h–24FFFFh
SA6
0000110xxx
64/32
060000h–06FFFFh
030000h–037FFFh
SA74
1001010xxx
64/32
4A0000h–4AFFFFh
250000h–257FFFh
SA7
0000111xxx
64/32
070000h–07FFFFh
038000h–03FFFFh
SA75
1001011xxx
64/32
4B0000h–4BFFFFh
258000h–25FFFFh
SA8
0001000xxx
64/32
080000h–08FFFFh
040000h–047FFFh
SA76
1001100xxx
64/32
4C0000h–4CFFFFh
260000h–267FFFh
SA9
0001001xxx
64/32
090000h–09FFFFh
048000h–04FFFFh
SA77
1001101xxx
64/32
4D0000h–4DFFFFh
268000h–26FFFFh
SA10
0001010xxx
64/32
0A0000h–0AFFFFh
050000h–057FFFh
SA78
1001110xxx
64/32
4E0000h–4EFFFFh
270000h–277FFFh
SA11
0001011xxx
64/32
0B0000h–0BFFFFh
058000h–05FFFFh
SA79
1001111xxx
64/32
4F0000h–4FFFFFh
278000h–27FFFFh
SA12
0001100xxx
64/32
0C0000h–0CFFFFh
060000h–067FFFh
SA80
1010000xxx
64/32
500000h–50FFFFh
280000h–287FFFh
SA13
0001101xxx
64/32
0D0000h–0DFFFFh
068000h–06FFFFh
SA81
1010001xxx
64/32
510000h–51FFFFh
288000h–28FFFFh
SA14
0001110xxx
64/32
0E0000h–0EFFFFh
070000h–077FFFh
SA82
1010010xxx
64/32
520000h–52FFFFh
290000h–297FFFh
SA15
0001111xxx
64/32
0F0000h–0FFFFFh
078000h–07FFFFh
SA83
1010011xxx
64/32
530000h–53FFFFh
298000h–29FFFFh
SA16
0010000xxx
64/32
100000h–10FFFFh
080000h–087FFFh
SA84
1010100xxx
64/32
540000h–54FFFFh
2A0000h–2A7FFFh
SA17
0010001xxx
64/32
110000h–11FFFFh
088000h–08FFFFh
SA85
1010101xxx
64/32
550000h–55FFFFh
2A8000h–2AFFFFh
SA18
0010010xxx
64/32
120000h–12FFFFh
090000h–097FFFh
SA86
1010110xxx
64/32
560000h–56FFFFh
2B0000h–2B7FFFh
SA19
0010011xxx
64/32
130000h–13FFFFh
098000h–09FFFFh
SA87
1010111xxx
64/32
570000h–57FFFFh
2B8000h–2BFFFFh
SA20
0010100xxx
64/32
140000h–14FFFFh
0A0000h–0A7FFFh
SA88
1011000xxx
64/32
580000h–58FFFFh
2C0000h–2C7FFFh
SA21
0010101xxx
64/32
150000h–15FFFFh
0A8000h–0AFFFFh
SA89
1011001xxx
64/32
590000h–59FFFFh
2C8000h–2CFFFFh
SA22
0010110xxx
64/32
160000h–16FFFFh
0B0000h–0B7FFFh
SA90
1011010xxx
64/32
5A0000h–5AFFFFh
2D0000h–2D7FFFh
24
8-bit
Address
Range
16-bit
Address
Range
S29GL-N MirrorBit® Flash Family
8-bit
Address
Range
16-bit
Address
Range
S29GL-N_01_12 October 29, 2008
Data
She et
Table 8.6 S29GL064N (Model 03) Top Boot Sector Addresses (Sheet 2 of 2)
Sector
A21–A12
Sector
Size
(KB/
Kwords)
Sector
A21–A12
Sector
Size
(KB/
Kwords)
SA23
0010111xxx
64/32
170000h–17FFFFh
0B8000h–0BFFFFh
SA91
1011011xxx
64/32
5B0000h–5BFFFFh
2D8000h–2DFFFFh
SA24
0011000xxx
64/32
180000h–18FFFFh
0C0000h–0C7FFFh
SA92
1011100xxx
64/32
5C0000h–5CFFFFh
2E0000h–2E7FFFh
SA25
0011001xxx
64/32
190000h–19FFFFh
0C8000h–0CFFFFh
SA93
1011101xxx
64/32
5D0000h–5DFFFFh
2E8000h–2EFFFFh
SA26
0011010xxx
64/32
1A0000h–1AFFFFh
0D0000h–0D7FFFh
SA94
1011110xxx
64/32
5E0000h–5EFFFFh
2F0000h–2F7FFFh
SA27
0011011xxx
64/32
1B0000h–1BFFFFh
0D8000h–0DFFFFh
SA95
1011111xxx
64/32
5F0000h–5FFFFFh
2F8000h–2FFFFFh
SA28
0011100xxx
64/32
1C0000h–1CFFFFh
0E0000h–0E7FFFh
SA96
1100000xxx
64/32
600000h–60FFFFh
300000h–307FFFh
SA29
0011101xxx
64/32
1D0000h–1DFFFFh
0E8000h–0EFFFFh
SA97
1100001xxx
64/32
610000h–61FFFFh
308000h–30FFFFh
SA30
0011110xxx
64/32
1E0000h–1EFFFFh
0F0000h–0F7FFFh
SA98
1100010xxx
64/32
620000h–62FFFFh
310000h–317FFFh
SA31
0011111xxx
64/32
1F0000h–1FFFFFh
0F8000h–0FFFFFh
SA99
1100011xxx
64/32
630000h–63FFFFh
318000h–31FFFFh
SA32
0100000xxx
64/32
200000h–20FFFFh
100000h–107FFFh
SA100
1100100xxx
64/32
640000h–64FFFFh
320000h–327FFFh
SA33
0100001xxx
64/32
210000h–21FFFFh
108000h–10FFFFh
SA101
1100101xxx
64/32
650000h–65FFFFh
328000h–32FFFFh
SA34
0100010xxx
64/32
220000h–22FFFFh
110000h–117FFFh
SA102
1100110xxx
64/32
660000h–66FFFFh
330000h–337FFFh
SA35
0101011xxx
64/32
230000h–23FFFFh
118000h–11FFFFh
SA103
1100111xxx
64/32
670000h–67FFFFh
338000h–33FFFFh
SA36
0100100xxx
64/32
240000h–24FFFFh
120000h–127FFFh
SA104
1101000xxx
64/32
680000h–68FFFFh
340000h–347FFFh
SA37
0100101xxx
64/32
250000h–25FFFFh
128000h–12FFFFh
SA105
1101001xxx
64/32
690000h–69FFFFh
348000h–34FFFFh
SA38
0100110xxx
64/32
260000h–26FFFFh
130000h–137FFFh
SA106
1101010xxx
64/32
6A0000h–6AFFFFh
350000h–357FFFh
SA39
0100111xxx
64/32
270000h–27FFFFh
138000h–13FFFFh
SA107
1101011xxx
64/32
6B0000h–6BFFFFh
358000h–35FFFFh
SA40
0101000xxx
64/32
280000h–28FFFFh
140000h–147FFFh
SA108
1101100xxx
64/32
6C0000h–6CFFFFh
360000h–367FFFh
SA41
0101001xxx
64/32
290000h–29FFFFh
148000h–14FFFFh
SA109
1101101xxx
64/32
6D0000h–6DFFFFh
368000h–36FFFFh
SA42
0101010xxx
64/32
2A0000h–2AFFFFh
150000h–157FFFh
SA110
1101110xxx
64/32
6E0000h–6EFFFFh
370000h–377FFFh
SA43
0101011xxx
64/32
2B0000h–2BFFFFh
158000h–15FFFFh
SA111
1101111xxx
64/32
6F0000h–6FFFFFh
378000h–37FFFFh
SA44
0101100xxx
64/32
2C0000h–2CFFFFh
160000h–167FFFh
SA112
1110000xxx
64/32
700000h–70FFFFh
380000h–387FFFh
SA45
0101101xxx
64/32
2D0000h–2DFFFFh
168000h–16FFFFh
SA113
1110001xxx
64/32
710000h–71FFFFh
388000h–38FFFFh
SA46
0101110xxx
64/32
2E0000h–2EFFFFh
170000h–177FFFh
SA114
1110010xxx
64/32
720000h–72FFFFh
390000h–397FFFh
SA47
0101111xxx
64/32
2F0000h–2FFFFFh
178000h–17FFFFh
SA115
1110011xxx
64/32
730000h–73FFFFh
398000h–39FFFFh
SA48
0110000xxx
64/32
300000h–30FFFFh
180000h–187FFFh
SA116
1110100xxx
64/32
740000h–74FFFFh
3A0000h–3A7FFFh
SA49
0110001xxx
64/32
310000h–31FFFFh
188000h–18FFFFh
SA117
1110101xxx
64/32
750000h–75FFFFh
3A8000h–3AFFFFh
SA50
0110010xxx
64/32
320000h–32FFFFh
190000h–197FFFh
SA118
1110110xxx
64/32
760000h–76FFFFh
3B0000h–3B7FFFh
SA51
0110011xxx
64/32
330000h–33FFFFh
198000h–19FFFFh
SA119
1110111xxx
64/32
770000h–77FFFFh
3B8000h–3BFFFFh
SA52
0110100xxx
64/32
340000h–34FFFFh
1A0000h–1A7FFFh
SA120
1111000xxx
64/32
780000h–78FFFFh
3C0000h–3C7FFFh
SA53
0110101xxx
64/32
350000h–35FFFFh
1A8000h–1AFFFFh
SA121
1111001xxx
64/32
790000h–79FFFFh
3C8000h–3CFFFFh
SA54
0110110xxx
64/32
360000h–36FFFFh
1B0000h–1B7FFFh
SA122
1111010xxx
64/32
7A0000h–7AFFFFh
3D0000h–3D7FFFh
SA55
0110111xxx
64/32
370000h–37FFFFh
1B8000h–1BFFFFh
SA123
1111011xxx
64/32
7B0000h–7BFFFFh
3D8000h–3DFFFFh
SA56
0111000xxx
64/32
380000h–38FFFFh
1C0000h–1C7FFFh
SA124
1111100xxx
64/32
7C0000h–7CFFFFh
3E0000h–3E7FFFh
SA57
0111001xxx
64/32
390000h–39FFFFh
1C8000h–1CFFFFh
SA125
1111101xxx
64/32
7D0000h–7DFFFFh
3E8000h–3EFFFFh
SA58
0111010xxx
64/32
3A0000h–3AFFFFh
1D0000h–1D7FFFh
SA126
1111110xxx
64/32
7E0000h–7EFFFFh
3F0000h–3F7FFFh
SA59
0111011xxx
64/32
3B0000h–3BFFFFh
1D8000h–1DFFFFh
SA127
1111111000
8/4
7F0000h–7F1FFFh
3F8000h–3F8FFFh
SA60
0111100xxx
64/32
3C0000h–3CFFFFh
1E0000h–1E7FFFh
SA128
1111111001
8/4
7F2000h–7F3FFFh
3F9000h–3F9FFFh
SA61
0111101xxx
64/32
3D0000h–3DFFFFh
1E8000h–1EFFFFh
SA129
1111111010
8/4
7F4000h–7F5FFFh
3FA000h–3FAFFFh
SA62
0111110xxx
64/32
3E0000h–3EFFFFh
1F0000h–1F7FFFh
SA130
1111111011
8/4
7F6000h–7F7FFFh
3FB000h–3FBFFFh
8-bit
Address
Range
16-bit
Address
Range
8-bit
Address
Range
16-bit
Address
Range
SA63
0111111xxx
64/32
3F0000h–3FFFFFh
1F8000h–1FFFFFh
SA131
1111111100
8/4
7F8000h–7F9FFFh
3FC000h–3FCFFFh
SA64
1000000xxx
64/32
400000h–40FFFFh
200000h–207FFFh
SA132
1111111101
8/4
7FA000h–7FBFFFh
3FD000h–3FDFFFh
SA65
1000001xxx
64/32
410000h–41FFFFh
208000h–20FFFFh
SA133
1111111110
8/4
7FC000h–7FDFFFh
3FE000h–3FEFFFh
SA66
1000010xxx
64/32
420000h–42FFFFh
210000h–217FFFh
SA134
1111111111
8/4
7FE000h–7FFFFFh
3FF000h–3FFFFFh
SA67
1000011xxx
64/32
430000h–43FFFFh
218000h–21FFFFh
October 29, 2008 S29GL-N_01_12
S29GL-N MirrorBit® Flash Family
25
D at a
S hee t
Table 8.7 S29GL064N (Model 04) Bottom Boot Sector Addresses (Sheet 1 of 2)
Sector
A21–A12
Sector
Size
(KB/
Kwords)
Sector
A21–A12
Sector
Size
(KB/
Kwords)
SA0
0000000000
8/4
000000h–001FFFh
000000h–000FFFh
SA45
0100110xxx
64/32
260000h–26FFFFh
130000h–137FFFh
SA1
0000000001
8/4
002000h–003FFFh
001000h–001FFFh
SA46
0100111xxx
64/32
270000h–27FFFFh
138000h–13FFFFh
SA2
0000000010
8/4
004000h–005FFFh
002000h–002FFFh
SA47
0101000xxx
64/32
280000h–28FFFFh
140000h–147FFFh
SA3
0000000011
8/4
006000h–007FFFh
003000h–003FFFh
SA48
0101001xxx
64/32
290000h–29FFFFh
148000h–14FFFFh
SA4
0000000100
8/4
008000h–009FFFh
004000h–004FFFh
SA49
0101010xxx
64/32
2A0000h–2AFFFFh
150000h–157FFFh
SA5
0000000101
8/4
00A000h–00BFFFh
005000h–005FFFh
SA50
0101011xxx
64/32
2B0000h–2BFFFFh
158000h–15FFFFh
SA6
0000000110
8/4
00C000h–00DFFFh
006000h–006FFFh
SA51
0101100xxx
64/32
2C0000h–2CFFFFh
160000h–167FFFh
SA7
0000000111
8/4
00E000h–00FFFFh
007000h–007FFFh
SA52
0101101xxx
64/32
2D0000h–2DFFFFh
168000h–16FFFFh
8-bit
Address
Range
16-bit
Address
Range
8-bit
Address
Range
16-bit
Address
Range
SA8
0000001xxx
64/32
010000h–01FFFFh
008000h–00FFFFh
SA53
0101110xxx
64/32
2E0000h–2EFFFFh
170000h–177FFFh
SA9
0000010xxx
64/32
020000h–02FFFFh
010000h–017FFFh
SA54
0101111xxx
64/32
2F0000h–2FFFFFh
178000h–17FFFFh
SA10
0000011xxx
64/32
030000h–03FFFFh
018000h–01FFFFh
SA55
0110000xxx
64/32
300000h–30FFFFh
180000h–187FFFh
SA11
0000100xxx
64/32
040000h–04FFFFh
020000h–027FFFh
SA56
0110001xxx
64/32
310000h–31FFFFh
188000h–18FFFFh
SA12
0000101xxx
64/32
050000h–05FFFFh
028000h–02FFFFh
SA57
0110010xxx
64/32
320000h–32FFFFh
190000h–197FFFh
SA13
0000110xxx
64/32
060000h–06FFFFh
030000h–037FFFh
SA58
0110011xxx
64/32
330000h–33FFFFh
198000h–19FFFFh
SA14
0000111xxx
64/32
070000h–07FFFFh
038000h–03FFFFh
SA59
0110100xxx
64/32
340000h–34FFFFh
1A0000h–1A7FFFh
SA15
0001000xxx
64/32
080000h–08FFFFh
040000h–047FFFh
SA60
0110101xxx
64/32
350000h–35FFFFh
1A8000h–1AFFFFh
SA16
0001001xxx
64/32
090000h–09FFFFh
048000h–04FFFFh
SA61
0110110xxx
64/32
360000h–36FFFFh
1B0000h–1B7FFFh
SA17
0001010xxx
64/32
0A0000h–0AFFFFh
050000h–057FFFh
SA62
0110111xxx
64/32
370000h–37FFFFh
1B8000h–1BFFFFh
SA18
0001011xxx
64/32
0B0000h–0BFFFFh
058000h–05FFFFh
SA63
0111000xxx
64/32
380000h–38FFFFh
1C0000h–1C7FFFh
SA19
0001100xxx
64/32
0C0000h–0CFFFFh
060000h–067FFFh
SA64
0111001xxx
64/32
390000h–39FFFFh
1C8000h–1CFFFFh
SA20
0001101xxx
64/32
0D0000h–0DFFFFh
068000h–06FFFFh
SA65
0111010xxx
64/32
3A0000h–3AFFFFh
1D0000h–1D7FFFh
SA21
0001110xxx
64/32
0E0000h–0EFFFFh
070000h–077FFFh
SA66
0111011xxx
64/32
3B0000h–3BFFFFh
1D8000h–1DFFFFh
SA22
0001111xxx
64/32
0F0000h–0FFFFFh
078000h–07FFFFh
SA67
0111100xxx
64/32
3C0000h–3CFFFFh
1E0000h–1E7FFFh
SA23
0010000xxx
64/32
100000h–10FFFFh
080000h–087FFFh
SA68
0111101xxx
64/32
3D0000h–3DFFFFh
1E8000h–1EFFFFh
SA24
0010001xxx
64/32
110000h–11FFFFh
088000h–08FFFFh
SA69
0111110xxx
64/32
3E0000h–3EFFFFh
1F0000h–1F7FFFh
SA25
0010010xxx
64/32
120000h–12FFFFh
090000h–097FFFh
SA70
0111111xxx
64/32
3F0000h–3FFFFFh
1F8000h–1FFFFFh
SA26
0010011xxx
64/32
130000h–13FFFFh
098000h–09FFFFh
SA71
1000000xxx
64/32
400000h–40FFFFh
200000h–207FFFh
SA27
0010100xxx
64/32
140000h–14FFFFh
0A0000h–0A7FFFh
SA72
1000001xxx
64/32
410000h–41FFFFh
208000h–20FFFFh
SA28
0010101xxx
64/32
150000h–15FFFFh
0A8000h–0AFFFFh
SA73
1000010xxx
64/32
420000h–42FFFFh
210000h–217FFFh
SA29
0010110xxx
64/32
160000h–16FFFFh
0B0000h–0B7FFFh
SA74
1000011xxx
64/32
430000h–43FFFFh
218000h–21FFFFh
SA30
0010111xxx
64/32
170000h–17FFFFh
0B8000h–0BFFFFh
SA75
1000100xxx
64/32
440000h–44FFFFh
220000h–227FFFh
SA31
0011000xxx
64/32
180000h–18FFFFh
0C0000h–0C7FFFh
SA76
1000101xxx
64/32
450000h–45FFFFh
228000h–22FFFFh
SA32
0011001xxx
64/32
190000h–19FFFFh
0C8000h–0CFFFFh
SA77
1000110xxx
64/32
460000h–46FFFFh
230000h–237FFFh
SA33
0011010xxx
64/32
1A0000h–1AFFFFh
0D0000h–0D7FFFh
SA78
1000111xxx
64/32
470000h–47FFFFh
238000h–23FFFFh
SA34
0011011xxx
64/32
1B0000h–1BFFFFh
0D8000h–0DFFFFh
SA79
1001000xxx
64/32
480000h–48FFFFh
240000h–247FFFh
SA35
0011100xxx
64/32
1C0000h–1CFFFFh
0E0000h–0E7FFFh
SA80
1001001xxx
64/32
490000h–49FFFFh
248000h–24FFFFh
SA36
0011101xxx
64/32
1D0000h–1DFFFFh
0E8000h–0EFFFFh
SA81
1001010xxx
64/32
4A0000h–4AFFFFh
250000h–257FFFh
SA37
0011110xxx
64/32
1E0000h–1EFFFFh
0F0000h–0F7FFFh
SA82
1001011xxx
64/32
4B0000h–4BFFFFh
258000h–25FFFFh
SA38
0011111xxx
64/32
1F0000h–1FFFFFh
0F8000h–0FFFFFh
SA83
1001100xxx
64/32
4C0000h–4CFFFFh
260000h–267FFFh
SA39
0100000xxx
64/32
200000h–20FFFFh
100000h–107FFFh
SA84
1001101xxx
64/32
4D0000h–4DFFFFh
268000h–26FFFFh
SA40
0100001xxx
64/32
210000h–21FFFFh
108000h–10FFFFh
SA85
1001110xxx
64/32
4E0000h–4EFFFFh
270000h–277FFFh
SA41
0100010xxx
64/32
220000h–22FFFFh
110000h–117FFFh
SA86
1001111xxx
64/32
4F0000h–4FFFFFh
278000h–27FFFFh
SA42
0100011xxx
64/32
230000h–23FFFFh
118000h–11FFFFh
SA87
1010000xxx
64/32
500000h–50FFFFh
280000h–28FFFFh
SA43
0100100xxx
64/32
240000h–24FFFFh
120000h–127FFFh
SA88
1010001xxx
64/32
510000h–51FFFFh
288000h–28FFFFh
SA44
0100101xxx
64/32
250000h–25FFFFh
128000h–12FFFFh
SA89
1010010xxx
64/32
520000h–52FFFFh
290000h–297FFFh
SA90
1010011xxx
64/32
530000h–53FFFFh
298000h–29FFFFh
SA112
1101001xxx
64/32
690000h–69FFFFh
348000h–34FFFFh
26
S29GL-N MirrorBit® Flash Family
S29GL-N_01_12 October 29, 2008
Data
She et
Table 8.7 S29GL064N (Model 04) Bottom Boot Sector Addresses (Sheet 2 of 2)
Sector
Size
(KB/
Kwords)
Sector
A21–A12
Sector
Size
(KB/
Kwords)
Sector
A21–A12
SA91
1010100xxx
64/32
540000h–54FFFFh
2A0000h–2A7FFFh
SA113
1101010xxx
64/32
6A0000h–6AFFFFh
350000h–357FFFh
SA92
1010101xxx
64/32
550000h–55FFFFh
2A8000h–2AFFFFh
SA114
1101011xxx
64/32
6B0000h–6BFFFFh
358000h–35FFFFh
SA93
1010110xxx
64/32
560000h–56FFFFh
2B0000h–2B7FFFh
SA115
1101100xxx
64/32
6C0000h–6CFFFFh
360000h–367FFFh
SA94
1010111xxx
64/32
570000h–57FFFFh
2B8000h–2BFFFFh
SA116
1101101xxx
64/32
6D0000h–6DFFFFh
368000h–36FFFFh
SA95
1011000xxx
64/32
580000h–58FFFFh
2C0000h–2C7FFFh
SA117
1101110xxx
64/32
6E0000h–6EFFFFh
370000h–377FFFh
SA96
1011001xxx
64/32
590000h–59FFFFh
2C8000h–2CFFFFh
SA118
1101111xxx
64/32
6F0000h–6FFFFFh
378000h–37FFFFh
SA97
1011010xxx
64/32
5A0000h–5AFFFFh
2D0000h–2D7FFFh
SA119
1110000xxx
64/32
700000h–70FFFFh
380000h–387FFFh
SA98
1011011xxx
64/32
5B0000h–5BFFFFh
2D8000h–2DFFFFh
SA120
1110001xxx
64/32
710000h–71FFFFh
388000h–38FFFFh
8-bit
Address
Range
16-bit
Address
Range
16-bit
Address
Range
8-bit
Address
Range
SA99
1011100xxx
64/32
5C0000h–5CFFFFh
2E0000h–2E7FFFh
SA121
1110010xxx
64/32
720000h–72FFFFh
390000h–397FFFh
SA100
1011101xxx
64/32
5D0000h–5DFFFFh
2E8000h–2EFFFFh
SA122
1110011xxx
64/32
730000h–73FFFFh
398000h–39FFFFh
SA101
1011110xxx
64/32
5E0000h–5EFFFFh
2F0000h–2F7FFFh
SA123
1110100xxx
64/32
740000h–74FFFFh
3A0000h–3A7FFFh
SA102
1011111xxx
64/32
5F0000h–5FFFFFh
2F8000h–2FFFFFh
SA124
1110101xxx
64/32
750000h–75FFFFh
3A8000h–3AFFFFh
SA103
1100000xxx
64/32
600000h–60FFFFh
300000h–307FFFh
SA125
1110110xxx
64/32
760000h–76FFFFh
3B0000h–3B7FFFh
SA104
1100001xxx
64/32
610000h–61FFFFh
308000h–30FFFFh
SA126
1110111xxx
64/32
770000h–77FFFFh
3B8000h–3BFFFFh
SA105
1100010xxx
64/32
620000h–62FFFFh
310000h–317FFFh
SA127
1111000xxx
64/32
780000h–78FFFFh
3C0000h–3C7FFFh
SA106
1100011xxx
64/32
630000h–63FFFFh
318000h–31FFFFh
SA128
1111001xxx
64/32
790000h–79FFFFh
3C8000h–3CFFFFh
SA107
1100100xxx
64/32
640000h–64FFFFh
320000h–327FFFh
SA129
1111010xxx
64/32
7A0000h–7AFFFFh
3D0000h–3D7FFFh
SA108
1100101xxx
64/32
650000h–65FFFFh
328000h–32FFFFh
SA130
1111011xxx
64/32
7B0000h–7BFFFFh
3D8000h–3DFFFFh
SA109
1100110xxx
64/32
660000h–66FFFFh
330000h–337FFFh
SA131
1111100xxx
64/32
7C0000h–7CFFFFh
3E0000h–3E7FFFh
SA110
1100111xxx
64/32
670000h–67FFFFh
338000h–33FFFFh
SA132
1111101xxx
64/32
7D0000h–7DFFFFh
3E8000h–3EFFFFh
SA111
1101000xxx
64/32
680000h–68FFFFh
340000h–347FFFh
SA133
1111110xxx
64/32
7E0000h–7EFFFFh
3F0000h–3F7FFFh
SA134
1111111xxx
64/32
7F0000h–7FFFFFh
3F8000h–3FFFFFh
Table 8.8 S29GL064N (Models 06, 07, V6, V7) Sector Addresses (Sheet 1 of 2)
Sector
A21–A15
16-bit
Address
Range
Sector
A21–A15
16-bit
Address
Range
SA0
0000000
000000–007FFF
SA64
1000000
100000–107FFF
SA1
0000001
008000–00FFFF
SA65
1000001
SA2
0000010
010000–017FFF
SA66
1000010
108000–10FFFF
110000–117FFF
SA3
0000011
018000–01FFFF
SA67
1000011
118000–11FFFF
SA4
0000100
020000–027FFF
SA68
1000100
120000–127FFF
SA5
0000101
028000–02FFFF
SA69
1000101
128000–12FFFF
SA6
0000110
030000–037FFF
SA70
1000110
130000–137FFF
SA7
0000111
038000–03FFFF
SA71
1000111
138000–13FFFF
SA8
0001000
040000–047FFF
SA72
1001000
140000–147FFF
148000–14FFFF
SA9
0001001
048000–04FFFF
SA73
1001001
SA10
0001010
050000–057FFF
SA74
1001010
150000–157FFF
SA11
0001011
058000–05FFFF
SA75
1001011
158000–15FFFF
SA12
0001100
060000–067FFF
SA76
1001100
160000–167FFF
SA13
0001101
068000–06FFFF
SA77
1001101
168000–16FFFF
SA14
0001110
070000–077FFF
SA78
1001110
170000–177FFF
SA15
0001111
078000–07FFFF
SA79
1001111
178000–17FFFF
SA16
0010000
080000–087FFF
SA80
1010000
180000–187FFF
SA17
0010001
088000–08FFFF
SA81
1010001
188000–18FFFF
SA18
0010010
090000–097FFF
SA82
1010010
190000–197FFF
October 29, 2008 S29GL-N_01_12
S29GL-N MirrorBit® Flash Family
27
D at a
S hee t
Table 8.8 S29GL064N (Models 06, 07, V6, V7) Sector Addresses (Sheet 2 of 2)
28
Sector
A21–A15
16-bit
Address
Range
SA19
0010011
098000–09FFFF
SA83
1010011
198000–19FFFF
SA20
0010100
0A0000–0A7FFF
SA84
1010100
1A0000–1A7FFF
SA21
0010101
0A8000–0AFFFF
SA85
1010101
1A8000–1AFFFF
SA22
0010110
0B0000–0B7FFF
SA86
1010110
1B0000–1B7FFF
SA23
0010111
0B8000–0BFFFF
SA87
1010111
1B8000–1BFFFF
Sector
A21–A15
16-bit
Address
Range
SA24
0011000
0C0000–0C7FFF
SA88
1011000
1C0000–1C7FFF
SA25
0011001
0C8000–0CFFFF
SA89
1011001
1C8000–1CFFFF
SA26
0011010
0D0000–0D7FFF
SA90
1011010
1D0000–1D7FFF
SA27
0011011
0D8000–0DFFFF
SA91
1011011
1D8000–1DFFFF
SA28
0011100
0E0000–0E7FFF
SA92
1011100
1E0000–1E7FFF
SA29
0011101
0E8000–0EFFFF
SA93
1011101
1E8000–1EFFFF
SA30
0011110
0F0000–0F7FFF
SA94
1011110
1F0000–1F7FFF
SA31
0011111
0F8000–0FFFFF
SA95
1011111
1F8000–1FFFFF
SA32
0100000
200000–207FFF
SA96
1100000
300000–307FFF
SA33
0100001
208000–20FFFF
SA97
1100001
308000–30FFFF
SA34
0100010
210000–217FFF
SA98
1100010
310000–317FFF
SA35
0100011
218000–21FFFF
SA99
1100011
318000–31FFFF
SA36
0100100
220000–227FFF
SA100
1100100
320000–327FFF
SA37
0100101
228000–22FFFF
SA101
1100101
328000–32FFFF
SA38
0100110
230000–237FFF
SA102
1100110
330000–337FFF
SA39
0100111
238000–23FFFF
SA103
1100111
338000–33FFFF
SA40
0101000
240000–247FFF
SA104
1101000
340000–347FFF
SA41
0101001
248000–24FFFF
SA105
1101001
348000–34FFFF
SA42
0101010
250000–257FFF
SA106
1101010
350000–357FFF
SA43
0101011
258000–25FFFF
SA107
1101011
358000–35FFFF
SA44
0101100
260000–267FFF
SA108
1101100
360000–367FFF
SA45
0101101
268000–26FFFF
SA109
1101101
368000–36FFFF
SA46
0101110
270000–277FFF
SA110
1101110
370000–377FFF
SA47
0101111
278000–27FFFF
SA111
1101111
378000–37FFFF
SA48
0110000
280000–287FFF
SA112
1110000
380000–387FFF
SA49
0110001
288000–28FFFF
SA113
1110001
388000–38FFFF
SA50
0110010
290000–297FFF
SA114
1110010
390000–397FFF
SA51
0110011
298000–29FFFF
SA115
1110011
398000–39FFFF
SA52
0110100
2A0000–2A7FFF
SA116
1110100
3A0000–3A7FFF
SA53
0110101
2A8000–2AFFFF
SA117
1110101
3A8000–3AFFFF
SA54
0110110
2B0000–2B7FFF
SA118
1110110
3B0000–3B7FFF
SA55
0110111
2B8000–2BFFFF
SA119
1110111
3B8000–3BFFFF
SA56
0111000
2C0000–2C7FFF
SA120
1111000
3C0000–3C7FFF
SA57
0111001
2C8000–2CFFFF
SA121
1111001
3C8000–3CFFFF
SA58
0111010
2D0000–2D7FFF
SA122
1111010
3D0000–3D7FFF
SA59
0111011
2D8000–2DFFFF
SA123
1111011
3D8000–3DFFFF
SA60
0111100
2E0000–2E7FFF
SA124
1111100
3E0000–3E7FFF
SA61
0111101
2E8000–2EFFFF
SA125
1111101
3E8000–3EFFFF
SA62
0111110
2F0000–2F7FFF
SA126
1111110
3F0000–3F7FFF
SA63
0111111
2F8000–2FFFFF
SA127
1111111
3F8000–3FFFFF
S29GL-N MirrorBit® Flash Family
S29GL-N_01_12 October 29, 2008
Data
8.8
She et
Autoselect Mode
The autoselect mode provides manufacturer and device identification, and sector protection verification,
through identifier codes output on DQ7–DQ0. This mode is primarily intended for programming equipment to
automatically match a device to be programmed with its corresponding programming algorithm. However, the
autoselect codes can also be accessed in-system through the command register.
When using programming equipment, the autoselect mode requires VID on address pin A9. Address pins A6,
A3, A2, A1, and A0 must be as shown in Table 8.9 on page 29. In addition, when verifying sector protection,
the sector address must appear on the appropriate highest order address bits (see Table 8.2 - Table 8.8).
Table 8.9 shows the remaining address bits that are don’t care. When all necessary bits are set as required,
the programming equipment may then read the corresponding identifier code on DQ7–DQ0.
To access the autoselect codes in-system, the host system can issue the autoselect command via the
command register, as shown in Table 10.1 on page 51 and Table 10.3 on page 53. This method does not
require VID. Refer to the Autoselect Command Sequence section for more information.
Table 8.9 Autoselect Codes, (High Voltage Method)
DQ7 to DQ0
Description
S29GL032N
S29GL064N
Manufacturer ID:
Spansion Products
CE# OE# WE#
L
L
H
Amax
to
A15
A14
to
A10
X
X
A9
A8
to
A7
VID
X
DQ8 to DQ15
A6
A5
to
A4
A3
to
A2
A1
L
X
L
Model Number
A0
BYTE#
= VIH
BYTE#
= VIL
01, 02
V1, V2
03, 04
06, 07,
V6, V7
L
L
00
X
01h
01h
01h
Cycle 1
L
L
H
22
X
7Eh
7Eh
7Eh
Cycle 2
H
H
L
22
X
0Ch
10h
13h
01h
00h (04, bottom boot)
01h (03, top boot)
01h
L
L
H
X
X
VID
X
L
X
Cycle 3
H
H
H
22
X
Cycle 1
L
L
H
22
X
7Eh
7Eh
Cycle 2
H
H
L
22
X
1Dh
1Ah
H
H
H
22
X
00h
00h (04, bottom boot)
01h (03, top boot)
L
L
H
X
X
VID
X
L
X
Cycle 3
Sector Protection
Verification
L
L
H
SA
X
VID
X
L
X
L
H
L
X
X
Secured Silicon Sector
Indicator Bit (DQ7),
WP# protects highest
address sector
L
L
H
X
X
VID
X
L
X
L
H
H
X
X
Secured Silicon Sector
Indicator Bit (DQ7),
WP# protects lowest
address sector
L
L
H
X
X
VID
X
L
X
L
H
H
X
X
01h (protected),
00h (unprotected)
For S29GL064N and S29GL032N:
9A (factory locked),
1A (not factory locked)
For S29GL064N and S29GL032N:
8A (factory locked),
0A (not factory locked)
Legend
L = Logic Low = VIL
H = Logic High = VIH
SA = Sector Address
X = Don’t care
October 29, 2008 S29GL-N_01_12
S29GL-N MirrorBit® Flash Family
29
D at a
8.9
S hee t
Advanced Sector Protection
The device features several levels of sector protection, which can disable both the program and erase
operations in certain sectors:
8.9.1
Persistent Sector Protection
A command sector protection method that replaces the old 12 V controlled protection method.
8.9.2
Password Sector Protection
A highly sophisticated protection method that requires a password before changes to certain sectors are
permitted
8.9.3
WP# Hardware Protection
A write protect pin that can prevent program or erase operations in the outermost sectors.
The WP# Hardware Protection feature is always available, independent of the software managed protection
method chosen.
8.9.4
Selecting a Sector Protection Mode
All parts default to operate in the Persistent Sector Protection mode. The user must then choose if the
Persistent or Password Protection method is most desirable. There are two one-time programmable nonvolatile bits that define which sector protection method is used. If the user decides to continue using the
Persistent Sector Protection method, they must set the Persistent Sector Protection Mode Locking Bit.
This permanently sets the part to operate only using Persistent Sector Protection. If the user decides to use
the password method, they must set the Password Mode Locking Bit. This permanently sets the part to
operate only using password sector protection.
It is important to remember that setting either the Persistent Sector Protection Mode Locking Bit or the
Password Mode Locking Bit permanently selects the protection mode. It is not possible to switch between
the two methods once a locking bit is set. It is important that one mode is explicitly selected when the
device is first programmed, rather than relying on the default mode alone. This is so that it is not
possible for a system program or virus to later set the Password Mode Locking Bit, which would cause an
unexpected shift from the default Persistent Sector Protection Mode into the Password Protection Mode.
The device is shipped with all sectors unprotected. Spansion offers the option of programming and protecting
sectors at the factory prior to shipping the device through the ExpressFlash™ Service. Contact your sales
representative for details.
It is possible to determine whether a sector is protected or unprotected. See Autoselect Command Sequence
on page 42 for details.
30
S29GL-N MirrorBit® Flash Family
S29GL-N_01_12 October 29, 2008
Data
8.10
She et
Lock Register
The Lock Register consists of 3 bits (DQ2, DQ1, and DQ0). These DQ2, DQ1, DQ0 bits of the Lock Register
are programmable by the user. Users are not allowed to program both DQ2 and DQ1 bits of the Lock Register
to the 00 state. If the user tries to program DQ2 and DQ1 bits of the Lock Register to the 00 state, the device
aborts the Lock Register back to the default 11 state. The programming time of the Lock Register is same as
the typical word programming time (tWHWH1) without utilizing the Write Buffer of the device. During a Lock
Register programming sequence execution, the DQ6 Toggle Bit I toggles until the programming of the Lock
Register has completed to indicate programming status. All Lock Register bits are readable to allow users to
verify Lock Register statuses.
The Customer Secured Silicon Sector Protection Bit is DQ0, Persistent Protection Mode Lock Bit is DQ1, and
Password Protection Mode Lock Bit is DQ2 are accessible by all users. Each of these bits are non-volatile.
DQ15-DQ3 are reserved and must be 1's when the user tries to program the DQ2, DQ1, and DQ0 bits of the
Lock Register. The user is not required to program DQ2, DQ1 and DQ0 bits of the Lock Register at the same
time. This allows users to lock the Secured Silicon Sector and then set the device either permanently into
Password Protection Mode or Persistent Protection Mode and then lock the Secured Silicon Sector at
separate instances and time frames.
„ Secured Silicon Sector Protection allows the user to lock the Secured Silicon Sector area
„ Persistent Protection Mode Lock Bit allows the user to set the device permanently to operate in the
Persistent Protection Mode
„ Password Protection Mode Lock Bit allows the user to set the device permanently to operate in the
Password Protection Mode
Table 8.10 Lock Register
8.11
DQ15-3
DQ2
DQ1
DQ0
Don’t Care
Password Protection Mode
Lock Bit
Persistent Protection Mode
Lock Bit
Secured Silicon Sector
Protection Bit
Persistent Sector Protection
The Persistent Sector Protection method replaces the old 12 V controlled protection method while at the
same time enhancing flexibility by providing three different sector protection states
Dynamically Locked
The sector is protected and can be changed by a simple command
Persistently Locked
A sector is protected and cannot be changed
Unlocked
The sector is unprotected and can be changed by a simple command
To achieve these states, three types of “bits” are used:
8.11.1
Dynamic Protection Bit (DYB)
A volatile protection bit is assigned for each sector. After power-up or hardware reset, the contents of all DYB
bits are in the “unprotected state”. Each DYB is individually modifiable through the DYB Set Command and
DYB Clear Command. The DYB bits and Persistent Protect Bits (PPB) Lock bit are defaulted to power up in
the cleared state or unprotected state - meaning the all PPB bits are changeable.
The Protection State for each sector is determined by the logical OR of the PPB and the DYB related to that
sector. For the sectors that have the PPB bits cleared, the DYB bits control whether or not the sector is
protected or unprotected. By issuing the DYB Set and DYB Clear command sequences, the DYB bits is
protected or unprotected, thus placing each sector in the protected or unprotected state. These are the socalled Dynamic Locked or Unlocked states. They are called dynamic states because it is very easy to switch
back and forth between the protected and un-protected conditions. This allows software to easily protect
sectors against inadvertent changes yet does not prevent the easy removal of protection when changes are
needed.
The DYB bits maybe set or cleared as often as needed. The PPB bits allow for a more static, and difficult to
change, level of protection. The PPB bits retain their state across power cycles because they are Non-
October 29, 2008 S29GL-N_01_12
S29GL-N MirrorBit® Flash Family
31
D at a
S hee t
Volatile. Individual PPB bits are set with a program command but must all be cleared as a group through an
erase command.
The PPB Lock Bit adds an additional level of protection. Once all PPB bits are programmed to the desired
settings, the PPB Lock Bit may be set to the “freeze state”. Setting the PPB Lock Bit to the “freeze state”
disables all program and erase commands to the Non-Volatile PPB bits. In effect, the PPB Lock Bit locks the
PPB bits into their current state. The only way to clear the PPB Lock Bit to the “unfreeze state” is to go
through a power cycle, or hardware reset. The Software Reset command does not clear the PPB Lock Bit to
the “unfreeze state”. System boot code can determine if any changes to the PPB bits are needed e.g. to allow
new system code to be downloaded. If no changes are needed then the boot code can set the PPB Lock Bit
to disable any further changes to the PPB bits during system operation.
The WP# write protect pin adds a final level of hardware protection. When this pin is low it is not possible to
change the contents of the WP# protected sectors. These sectors generally hold system boot code. So, the
WP# pin can prevent any changes to the boot code that could override the choices made while setting up
sector protection during system initialization.
It is possible to have sectors that have been persistently locked, and sectors that are left in the dynamic state.
The sectors in the dynamic state are all unprotected. If there is a need to protect some of them, a simple DYB
Set command sequence is all that is necessary. The DYB Set and DYB Clear commands for the dynamic
sectors switch the DYB bits to signify protected and unprotected, respectively. If there is a need to change the
status of the persistently locked sectors, a few more steps are required. First, the PPB Lock Bit must be
disabled to the “unfreeze state” by either putting the device through a power-cycle, or hardware reset. The
PPB bits can then be changed to reflect the desired settings. Setting the PPB Lock Bit once again to the
“freeze state” locks the PPB bits, and the device operates normally again.
To achieve the best protection, execute the PPB Lock Bit Set command early in the boot code, and protect
the boot code by holding WP# = VIL.
8.11.2
Persistent Protection Bit (PPB)
A single Persistent (non-volatile) Protection Bit is assigned to each sector. If a PPB is programmed to the
protected state through the “PPB Program” command, that sector is protected from program or erase
operations and is therefor read-only. If a PPB requires erasure, all of the sector PPB bits must first be erased
in parallel through the “All PPB Erase” command. The “All PPB Erase” command preprograms all PPB bits
prior to PPB erasing. All PPB bits erase in parallel, unlike programming where individual PPB bits are
programmable. The PPB bits are limited to the same number of cycles as a flash memory sector.
Programming the PPB bit requires the typical word programming time without utilizing the Write Buffer.
During a PPB bit programming and all PPB bit erasing sequence executions, the DQ6 Toggle Bit I toggles
until the programming of the PPB bit or erasing of all PPB bits has completed to indicate programming and
erasing status. Erasing all of the PPB bits at once requires typical sector erase time. During the erasing of all
PPB bits, the DQ3 Sector Erase Timer bit outputs a 1 to indicate the erasure of all PPB bits are in progress.
When the erasure of all PPB bits has completed, the DQ3 Sector Erase Timer bit outputs a 0 to indicate that
all PPB bits have been erased. Reading the PPB Status bit requires the initial access time of the device.
32
S29GL-N MirrorBit® Flash Family
S29GL-N_01_12 October 29, 2008
Data
8.11.3
She et
Persistent Protection Bit Lock (PPB Lock Bit)
A global volatile bit. When set to the “freeze state”, the PPB bits cannot be changed. When cleared to the
“unfreeze state”, the PPB bits are changeable. There is only one PPB Lock Bit per device. The PPB Lock Bit
is cleared to the “unfreeze state” at power-up or hardware reset. There is no command sequence to unlock or
“unfreeze” the PPB Lock Bit.
Configuring the PPB Lock Bit to the freeze state requires approximately 100ns. Reading the PPB Lock Status
bit requires the initial access time (tACC) of the device.
Table 8.11 Sector Protection Schemes
Protection States
DYB Bit
PPB Bit
PPB Lock Bit
Unprotect
Unprotect
Unfreeze
Unprotect
Unprotect
Freeze
Unprotect
Protect
Unfreeze
Unprotect
Protect
Freeze
Protect
Unprotect
Unfreeze
Protect
Unprotect
Freeze
Protect
Protect
Unfreeze
Protect
Protect
Freeze
Sector State
Unprotected – PPB and DYB are changeable
Unprotected – PPB not changeable, DYB is changeable
Protected – PPB and DYB are changeable
Protected – PPB not changeable, DYB is changeable
Protected – PPB and DYB are changeable
Protected – PPB not changeable, DYB is changeable
Protected – PPB and DYB are changeable
Protected – PPB not changeable, DYB is changeable
Table 8.11 contains all possible combinations of the DYB bit, PPB bit, and PPB Lock Bit relating to the status
of the sector. In summary, if the PPB bit is set, and the PPB Lock Bit is set, the sector is protected and the
protection cannot be removed until the next power cycle or hardware reset clears the PPB Lock Bit to
“unfreeze state”. If the PPB bit is cleared, the sector can be dynamically locked or unlocked. The DYB bit then
controls whether or not the sector is protected or unprotected. If the user attempts to program or erase a
protected sector, the device ignores the command and returns to read mode. A program command to a
protected sector enables status polling for approximately 1 µs before the device returns to read mode without
having modified the contents of the protected sector. An erase command to a protected sector enables status
polling for approximately 50 µs after which the device returns to read mode without having erased the
protected sector. The programming of the DYB bit, PPB bit, and PPB Lock Bit for a given sector can be
verified by writing a DYB Status Read, PPB Status Read, and PPB Lock Status Read commands to the
device.
The Autoselect Sector Protection Verification outputs the OR function of the DYB bit and PPB bit per sector
basis. When the OR function of the DYB bit and PPB bit is a 1, the sector is either protected by DYB or PPB
or both. When the OR function of the DYB bit and PPB bit is a 0, the sector is unprotected through both the
DYB and PPB.
October 29, 2008 S29GL-N_01_12
S29GL-N MirrorBit® Flash Family
33
D at a
8.12
S hee t
Password Sector Protection
The Password Sector Protection method allows an even higher level of security than the Persistent Sector
Protection method. There are two main differences between the Persistent Sector Protection and the
Password Sector Protection methods:
„ When the device is first powered on, or comes out of a reset cycle, the PPB Lock Bit is set to the locked
state, or the freeze state, rather than cleared to the unlocked state, or the unfreeze state.
„ The only means to clear and unfreeze the PPB Lock Bit is by writing a unique 64-bit Password to the
device.
The Password Sector Protection method is otherwise identical to the Persistent Sector Protection method.
A 64-bit password is the only additional tool utilized in this method.
The password is stored in a one-time programmable (OTP) region outside of the flash memory. Once the
Password Protection Mode Lock Bit is set, the password is permanently set with no means to read, program,
or erase it. The password is used to clear and unfreeze the PPB Lock Bit. The Password Unlock command
must be written to the flash, along with a password. The flash device internally compares the given password
with the pre-programmed password. If they match, the PPB Lock Bit is cleared to the unfreezed state, and the
PPB bits can be altered. If they do not match, the flash device does nothing. There is a built-in 2 µs delay for
each password check after the valid 64-bit password is entered for the PPB Lock Bit to be cleared to the
“unfreezed state”. This delay is intended to thwart any efforts to run a program that tries all possible
combinations in order to crack the password.
8.13
Password and Password Protection Mode Lock Bit
In order to select the Password Sector Protection method, the user must first program the password.
Spansion recommends that the password be somehow correlated to the unique Electronic Serial Number
(ESN) of the particular flash device. Each ESN is different for every flash device; therefore each password
should be different for every flash device. While programming in the password region, the customer may
perform Password Read operations. Once the desired password is programmed in, the customer must then
set the Password Protection Mode Lock Bit. This operation achieves two objectives:
1. It permanently sets the device to operate using the Password Protection Mode. It is not possible to
reverse this function.
2. It also disables all further commands to the password region. All program, and read operations are
ignored.
Both of these objectives are important, and if not carefully considered, may lead to unrecoverable errors. The
user must be sure that the Password Sector Protection method is desired when programming the Password
Protection Mode Lock Bit. More importantly, the user must be sure that the password is correct when the
Password Protection Mode Lock Bit is programmed. Due to the fact that read operations are disabled, there is
no means to read what the password is afterwards. If the password is lost after programming the Password
Protection Mode Lock Bit, there is no way to clear and unfreeze the PPB Lock Bit. The Password Protection
Mode Lock Bit, once programmed, prevents reading the 64-bit password on the DQ bus and further password
programming. The Password Protection Mode Lock Bit is not erasable. Once Password Protection Mode
Lock Bit is programmed, the Persistent Protection Mode Lock Bit is disabled from programming, guaranteeing
that no changes to the protection scheme are allowed.
8.13.1
64-bit Password
The 64-bit Password is located in its own memory space and is accessible through the use of the Password
Program and Password Read commands. The password function works in conjunction with the Password
Protection Mode Lock Bit, which when programmed, prevents the Password Read command from reading
the contents of the password on the pins of the device.
34
S29GL-N MirrorBit® Flash Family
S29GL-N_01_12 October 29, 2008
Data
8.14
She et
Persistent Protection Bit Lock (PPB Lock Bit)
A global volatile bit. The PPB Lock Bit is a volatile bit that reflects the state of the Password Protection Mode
Lock Bit after power-up reset. If the Password Protection Mode Lock Bit is also programmed after
programming the Password, the Password Unlock command must be issued to clear and unfreeze the PPB
Lock Bit after a hardware reset (RESET# asserted) or a power-up reset. Successful execution of the
Password Unlock command clears and unfreezes the PPB Lock Bit, allowing for sector PPB bits to be
modified. Without issuing the Password Unlock command, while asserting RESET#, taking the device
through a power-on reset, or issuing the PPB Lock Bit Set command sets the PPB Lock Bit to a the “freeze
state”.
If the Password Protection Mode Lock Bit is not programmed, the device defaults to Persistent Protection
Mode. In the Persistent Protection Mode, the PPB Lock Bit is cleared to the unfreeze state after power-up or
hardware reset. The PPB Lock Bit is set to the freeze state by issuing the PPB Lock Bit Set command. Once
set to the freeze state the only means for clearing the PPB Lock Bit to the “unfreeze state” is by issuing a
hardware or power-up reset. The Password Unlock command is ignored in Persistent Protection Mode.
Reading the PPB Lock Bit requires a 200 ns access time.
8.15
Secured Silicon Sector Flash Memory Region
The Secured Silicon Sector feature provides a Flash memory region that enables permanent part
identification through an Electronic Serial Number (ESN). The Secured Silicon Sector is 256 bytes in length,
and uses a Secured Silicon Sector Indicator Bit (DQ7) to indicate whether or not the Secured Silicon Sector is
locked when shipped from the factory. This bit is permanently set at the factory and cannot be changed,
which prevents cloning of a factory locked part. This ensures the security of the ESN once the product is
shipped to the field.
The factory offers the device with the Secured Silicon Sector either customer lockable (standard shipping
option) or factory locked (contact an AMD sales representative for ordering information). The customerlockable version is shipped with the Secured Silicon Sector unprotected, allowing customers to program the
sector after receiving the device. The customer-lockable version also has the Secured Silicon Sector
Indicator Bit permanently set to a 0. The factory-locked version is always protected when shipped from the
factory, and has the Secured Silicon Sector Indicator Bit permanently set to a 1. Thus, the Secured Silicon
Sector Indicator Bit prevents customer-lockable devices from being used to replace devices that are factory
locked.
The Secured Silicon sector address space in this device is allocated as follows:
Secured Silicon Sector
Address Range
000000h–000007h
Customer Lockable
ESN Factory Locked
Determined by customer
000008h–00007Fh
ExpressFlash
Factory Locked
ESN
ESN or determined by
customer
Unavailable
Determined by customer
The system accesses the Secured Silicon Sector through a command sequence (see Write Protect (WP#/
ACC) on page 36). After the system has written the Enter Secured Silicon Sector command sequence, it may
read the Secured Silicon Sector by using the addresses normally occupied by the first sector (SA0). This
mode of operation continues until the system issues the Exit Secured Silicon Sector command sequence, or
until power is removed from the device. On power-up, or following a hardware reset, the device reverts to
sending commands to sector SA0.
October 29, 2008 S29GL-N_01_12
S29GL-N MirrorBit® Flash Family
35
D at a
8.15.1
S hee t
Customer Lockable: Secured Silicon Sector NOT Programmed or Protected
At the Factory
Unless otherwise specified, the device is shipped such that the customer may program and protect the 256byte Secured Silicon sector.
The system may program the Secured Silicon Sector using the write-buffer, accelerated and/or unlock
bypass methods, in addition to the standard programming command sequence. See Command Definitions
on page 41.
Programming and protecting the Secured Silicon Sector must be used with caution since, once protected,
there is no procedure available for unprotecting the Secured Silicon Sector area and none of the bits in the
Secured Silicon Sector memory space can be modified in any way.
The Secured Silicon Sector area can be protected using one of the following procedures:
„ Write the three-cycle Enter Secured Silicon Sector Region command.
„ To verify the protect/unprotect status of the Secured Silicon Sector, follow the algorithm.
Once the Secured Silicon Sector is programmed, locked and verified, the system must write the Exit Secured
Silicon Sector Region command sequence to return to reading and writing within the remainder of the array.
8.15.2
Factory Locked: Secured Silicon Sector Programmed and Protected At the
Factory
In devices with an ESN, the Secured Silicon Sector is protected when the device is shipped from the factory.
The Secured Silicon Sector cannot be modified in any way. An ESN Factory Locked device has an 16-byte
random ESN at addresses 000000h–000007h. Please contact your sales representative for details on
ordering ESN Factory Locked devices.
Customers may opt to have their code programmed by the factory through the ExpressFlash service (Express
Flash Factory Locked). The devices are then shipped from the factory with the Secured Silicon Sector
permanently locked. Contact your sales representative for details on using the ExpressFlash service.
8.16
Write Protect (WP#/ACC)
The Write Protect function provides a hardware method of protecting the first or last sector without using VID.
Write Protect is one of two functions provided by the WP#/ACC input.
If the system asserts VIL on the WP#/ACC pin, the device disables program and erase functions in the first or
last sector independently of whether those sectors were protected or unprotected. Note that if WP#/ACC is at
VIL when the device is in the standby mode, the maximum input load current is increased. See the table in DC
Characteristics on page 62.
If the system asserts VIH on the WP#/ACC pin, the device reverts to whether the first or last sector was
previously set to be protected or unprotected using the method described in Advanced Sector
Protection on page 30. Note that WP#/ACC contains an internal pull-up; when unconnected, WP#/ACC
is at VIH.
8.17
Hardware Data Protection
The command sequence requirement of unlock cycles for programming or erasing provides data protection
against inadvertent writes (refer to Table 10.1 on page 51 and Table 10.3 on page 53 for command
definitions). In addition, the following hardware data protection measures prevent accidental erasure or
programming, which might otherwise be caused by spurious system level signals during VCC power-up and
power-down transitions, or from system noise.
8.17.1
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC
power-up and power-down. The command register and all internal program/erase circuits are disabled, and
the device resets to the read mode. Subsequent writes are ignored until VCC is greater than VLKO. The
system must provide the proper signals to the control pins to prevent unintentional writes when VCC is greater
than VLKO.
36
S29GL-N MirrorBit® Flash Family
S29GL-N_01_12 October 29, 2008
Data
8.17.2
She et
Write Pulse Glitch Protection
Noise pulses of less than 3 ns (typical) on OE#, CE# or WE# do not initiate a write cycle.
8.17.3
Logical Inhibit
Write cycles are inhibited by holding any one of OE# = VIL, CE# = VIH or WE# = VIH. To initiate a write cycle,
CE# and WE# must be a logical zero while OE# is a logical one.
8.17.4
Power-Up Write Inhibit
If WE# = CE# = VIL and OE# = VIH during power up, the device does not accept commands on the rising
edge of WE#. The internal state machine is automatically reset to the read mode on power-up.
9. Common Flash Memory Interface (CFI)
The Common Flash Interface (CFI) specification outlines device and host system software interrogation
handshake, which allows specific vendor-specified software algorithms to be used for entire families of
devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and
backward-compatible for the specified flash device families. Flash vendors can standardize their existing
interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address
55h, any time the device is ready to read array data. The system can read CFI information at the addresses
given in Table 9.1 on page 37 – Table 9.4 on page 40. To terminate reading CFI data, the system must write
the reset command.
The system can also write the CFI query command when the device is in the autoselect mode. The device
enters the CFI query mode, and the system can read CFI data at the addresses given in
Table 9.1 on page 37 – Table 9.4 on page 40. The system must write the reset command to return the device
to reading array data.
For further information, please refer to the CFI Specification and CFI Publication 100. Alternatively, contact
your sales representative for copies of these documents.
Table 9.1 CFI Query Identification String
Addresses (x16)
Addresses (x8)
Data
10h
11h
12h
20h
22h
24h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
26h
28h
0002h
0000h
Primary OEM Command Set
15h
16h
2Ah
2Ch
0040h
0000h
Address for Primary Extended Table
17h
18h
2Eh
30h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
32h
34h
0000h
0000h
Address for Alternate OEM Extended Table (00h = none
exists)
October 29, 2008 S29GL-N_01_12
Description
S29GL-N MirrorBit® Flash Family
37
D at a
S hee t
Table 9.2 System Interface String
Addresses (x16) Addresses (x8)
Data
Description
1Bh
36h
0027h
VCC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
38h
0036h
VCC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
3Ah
0000h
VPP Min. voltage (00h = no VPP pin present)
1Eh
3Ch
0000h
VPP Max. voltage (00h = no VPP pin present)
1Fh
3Eh
0007h
Reserved for future use
20h
40h
0007h
Typical timeout for Min. size buffer write 2N µs
(00h = not supported)
21h
42h
000Ah
Typical timeout per individual block erase 2N ms
22h
44h
0000h
Typical timeout for full chip erase 2N ms (00h = not supported)
23h
46h
0003h
Max. timeout for byte/word program 2N times typical.
24h
48h
0005h
Max. timeout for buffer write 2N times typical
25h
4Ah
0004h
Max. timeout per individual block erase 2N times typical
26h
4Ch
0000h
Max. timeout for full chip erase 2N times typical
(00h = not supported)
Note
CFI data related to VCC and time-outs may differ from actual VCC and time-outs of the product. Please consult the Ordering Information
tables to obtain the VCC range for particular part numbers. Please consult the Erase and Programming Performance table for typical timeout
specifications.
38
S29GL-N MirrorBit® Flash Family
S29GL-N_01_12 October 29, 2008
Data
She et
Table 9.3 Device Geometry Definition
Addresses (x16)
Addresses (x8)
Data
Description
27h
4Eh
00xxh
28h
29h
50h
52h
000xh
0000h
2Ah
2Bh
54h
56h
0005h
0000h
Max. number of byte in multi-byte write = 2N
(00h = not supported)
2Ch
58h
00xxh
Number of Erase Block Regions within device (01h = uniform device,
02h = boot device)
Device Size = 2N byte
0017h = 64 Mb, 0016h = 32 Mb
Flash Device Interface description (refer to CFI publication 100)
0001h = x16-only bus devices
0002h = x8/x16 bus devices
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
00xxh
000xh
00x0h
000xh
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
007Fh, 0000h, 0000h, 0001h = 64 Mb (01, 02, 06, 07, V1, V2, V6, V7)
0007h, 0000h, 0020h, 0000h = 64 Mb (03, 04)
003Fh, 0000h, 0000h, 0001h = 32 Mb (01, 02, V1, V2)
0007h, 0000h, 0020h, 0000h = 32 Mb (03, 04)
Erase Block Region 2 Information (refer to CFI publication 100)
31h
32h
33h
34h
60h
64h
66h
68h
00xxh
0000h
0000h
000xh
0000h, 0000h, 0000h, 0000h = 64 Mb (01, 02, 06, 07, V1, V2, V6, V7)
007Eh, 0000h, 0000h, 0001h = 64 Mb (03, 04)
0000h, 0000h, 0000h, 0000h = 32 Mb (01, 02, V1, V2)
003Eh, 0000h, 0000h, 0001h = 32 Mb (03, 04)
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
0000h
0000h
0000h
Erase Block Region 3 Information (refer to CFI publication 100)
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
0000h
0000h
0000h
Erase Block Region 4 Information (refer to CFI publication 100)
October 29, 2008 S29GL-N_01_12
S29GL-N MirrorBit® Flash Family
39
D at a
S hee t
Table 9.4 Primary Vendor-Specific Extended Query
Addresses (x16)
Addresses (x8)
Data
40h
41h
42h
80h
82h
84h
0050h
0052h
0049h
Description
Query-unique ASCII string “PRI”
43h
86h
0031h
Major version number, ASCII
44h
88h
0033h
Minor version number, ASCII
Address Sensitive Unlock (Bits 1-0)
0 = Required, 1 = Not Required
45h
8Ah
00xxh
46h
8Ch
0002h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h
8Eh
0001h
Sector Protect
0 = Not Supported, X = Number of sectors in smallest sector
48h
90h
0000h
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
49h
92h
0008h
Sector Protect/Unprotect scheme
0008h = Advanced sector Protection
4Ah
94h
0000h
Simultaneous Operation
00 = Not Supported, X = Number of Sectors in Bank
4Bh
96h
0000h
Burst Mode Type
00 = Not Supported, 01 = Supported
4Ch
98h
0002h
Page Mode Type
02 = 8 Word Page
4Dh
9Ah
00B5h
4Eh
9Ch
00C5h
4Fh
9Eh
00xxh
50h
A0h
0001h
Process Technology (Bits 7-2) 0100b = 110 nm MirrorBit
0011h = x8-only bus devices
0010h = all other devices
ACC (Acceleration) Supply Minimum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
ACC (Acceleration) Supply Maximum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
Top/Bottom Boot Sector Flag
40
02h = Bottom Boot Device, 03h = Top Boot Device, 04h = Uniform
sectors bottom WP# protect, 05h = Uniform sectors top WP# protect
Program Suspend
00h = Not Supported, 01h = Supported
S29GL-N MirrorBit® Flash Family
S29GL-N_01_12 October 29, 2008
Data
She et
10. Command Definitions
Writing specific address and data commands or sequences into the command register initiates device
operations. Table 10.1 on page 51 and Table 10.3 on page 53 define the valid register command sequences.
Writing incorrect address and data values or writing them in the improper sequence may place the device in
an unknown state. A reset command is then required to return the device to reading array data.
All addresses are latched on the falling edge of WE# or CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens first. Refer to the AC Characteristics section for timing
diagrams.
10.1
Reading Array Data
The device is automatically set to reading array data after device power-up. No commands are required to
retrieve data. The device is ready to read array data after completing an Embedded Program or Embedded
Erase algorithm.
After the device accepts an Erase Suspend command, the device enters the erase-suspend-read mode, after
which the system can read data from any non-erase-suspended sector. After completing a programming
operation in the Erase Suspend mode, the system may once again read array data with the same exception.
See Erase Suspend/Erase Resume Commands on page 50 for more information.
The system must issue the reset command to return the device to the read (or erase-suspend-read) mode if
DQ5 goes high during an active program or erase operation, or if the device is in the autoselect mode. See
the next section, Reset Command, for more information.
See also Requirements for Reading Array Data in the Device Bus Operations section for more information.
The Read-Only Operations–AC Characteristics on page 64 provide the read parameters, and Figure 15.2
on page 65 shows the timing diagram.
10.2
Reset Command
Writing the reset command resets the device to the read or erase-suspend-read mode. Address bits are don’t
cares for this command.
The reset command may be written between the sequence cycles in an erase command sequence before
erasing begins. This resets the device to the read mode. Once erasure begins, however, the device ignores
reset commands until the operation is complete.
The reset command may be written between the sequence cycles in a program command sequence before
programming begins. This resets the device to the read mode. If the program command sequence is written
while the device is in the Erase Suspend mode, writing the reset command returns the device to the erasesuspend-read mode. Once programming begins, however, the device ignores reset commands until the
operation is complete.
The reset command may be written between the sequence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command must be written to return to the read mode. If the device
entered the autoselect mode while in the Erase Suspend mode, writing the reset command returns the device
to the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation, writing the reset command returns the device to the
read mode (or erase-suspend-read mode if the device was in Erase Suspend).
Note that if DQ1 goes high during a Write Buffer Programming operation, the system must write the Write-toBuffer-Abort Reset command sequence to reset the device for the next operation.
October 29, 2008 S29GL-N_01_12
S29GL-N MirrorBit® Flash Family
41
D at a
10.3
S hee t
Autoselect Command Sequence
The autoselect command sequence allows the host system to read several identifier codes at specific
addresses:
Identifier Code
A7:A0
(x16)
A6:A-1
(x8)
Manufacturer ID
00h
00h
Device ID, Cycle 1
01h
02h
Device ID, Cycle 2
0Eh
1Ch
Device ID, Cycle 3
0Fh
1Eh
Secured Silicon Sector Factory Protect
03h
06h
Sector Protect Verify
(SA)02h
(SA)04h
Note
The device ID is read over three cycles. SA = Sector Address
The autoselect command sequence is initiated by first writing on unlock cycle (two cycles). This is followed by
a third write cycle that contains the autoselect command. The device then enters the autoselect mode. The
system may read at any address any number of times without initiating another autoselect command
sequence:
The system must write the reset command to return to the read mode (or erase-suspend-read mode if the
device was previously in Erase Suspend).
10.4
Enter/Exit Secured Silicon Sector Command Sequence
The Secured Silicon Sector region provides a secured data area containing an 8-word/16-byte random
Electronic Serial Number (ESN). The system can access the Secured Silicon Sector region by issuing the
three-cycle Enter Secured Silicon Sector command sequence. The device continues to access the Secured
Silicon Sector region until the system issues the four-cycle Exit Secured Silicon Sector command sequence.
The Exit Secured Silicon Sector command sequence returns the device to normal operation. Table 10.1
on page 51 and Table 10.3 on page 53 show the address and data requirements for both command
sequences. See also Secured Silicon Sector Flash Memory Region on page 35 for further information. Note
that the ACC function and unlock bypass modes are not available when the Secured Silicon Sector is
enabled.
10.4.1
Word Program Command Sequence
Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two
unlock write cycles, followed by the program set-up command. The program address and data are written
next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further
controls or timings. The device automatically provides internally generated program pulses and verifies the
programmed cell margin. Table 10.1 on page 51 and Table 10.3 on page 53 show the address and data
requirements for the word program command sequence, respectively.
When the Embedded Program algorithm is complete, the device then returns to the read mode and
addresses are no longer latched. The system can determine the status of the program operation by using
DQ7 or DQ6. Refer to the Write Operation Status section for information on these status bits. Any commands
written to the device during the Embedded Program Algorithm are ignored. Note that the Secured Silicon
Sector, autoselect, and CFI functions are unavailable when a program operation is in progress. Note that a
hardware reset immediately terminates the program operation. The program command sequence should be
reinitiated once the device returns to the read mode, to ensure data integrity.
Programming is allowed in any sequence of address locations and across sector boundaries. Programming
to the same word address multiple times without intervening erases (incremental bit programming) requires a
modified programming method. For such application requirements, please contact your local Spansion
representative. Word programming is supported for backward compatibility with existing Flash driver software
and for occasional writing of individual words. Use of write buffer programming (see below) is strongly
recommended for general programming use when more than a few words are to be programmed. The
effective word programming time using write buffer programming is approximately four times shorter than the
single word programming time.
42
S29GL-N MirrorBit® Flash Family
S29GL-N_01_12 October 29, 2008
Data
She et
Any bit in a word cannot be programmed from 0 back to a 1. Attempting to do so may cause the device to
set DQ5=1, or cause DQ7 and DQ6 status bits to indicate the operation was successful. However, a
succeeding read shows that the data is still 0. Only erase operations can convert a 0 to a 1.
10.4.2
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to program words to the device faster than using the standard
program command sequence. The unlock bypass command sequence is initiated by first writing two unlock
cycles. This is followed by a third write cycle containing the unlock bypass command, 20h. The device then
enters the unlock bypass mode. A two-cycle unlock bypass mode command sequence is all that is required to
program in this mode. The first cycle in this sequence contains the unlock bypass program command, A0h;
the second cycle contains the program address and data. Additional data is programmed in the same
manner. This mode dispenses with the initial two unlock cycles required in the standard program command
sequence, resulting in faster total programming time. Table 10.1 on page 51 and Table 10.3 on page 53
show the requirements for the command sequence.
During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands are
valid. To exit the unlock bypass mode, the system must issue the two-cycle unlock bypass reset command
sequence. The first cycle must contain the data 90h. The second cycle must contain the data 00h. The device
then returns to the read mode.
10.4.3
Write Buffer Programming
Write Buffer Programming allows the system write to a maximum of 16 words/32 bytes in one programming
operation. This results in faster effective programming time than the standard programming algorithms. The
Write Buffer Programming command sequence is initiated by first writing two unlock cycles. This is followed
by a third write cycle containing the Write Buffer Load command written at the Sector Address in which
programming occurs. The fourth cycle writes the sector address and the number of word locations, minus
one, to be programmed. For example, if the system programs six unique address locations, then 05h should
be written to the device. This tells the device how many write buffer addresses are loaded with data and
therefore when to expect the Program Buffer to Flash command. The number of locations to program cannot
exceed the size of the write buffer or the operation aborts.
The fifth cycle writes the first address location and data to be programmed. The write-buffer-page is selected
by address bits AMAX–A4. All subsequent address/data pairs must fall within the selected-write-buffer-page.
The system then writes the remaining address/data pairs into the write buffer. Write buffer locations may be
loaded in any order.
The write-buffer-page address must be the same for all address/data pairs loaded into the write buffer. (This
means Write Buffer Programming cannot be performed across multiple write-buffer pages.) This also means
that Write Buffer Programming cannot be performed across multiple sectors. If the system attempts to load
programming data outside of the selected write-buffer page, the operation aborts.
Note that if a Write Buffer address location is loaded multiple times, the address/data pair counter is
decremented for every data load operation. The host system must therefore account for loading a write-buffer
location more than once. The counter decrements for each data load operation, not for each unique writebuffer-address location. Note also that if an address location is loaded more than once into the buffer, the
final data loaded for that address is programmed.
Once the specified number of write buffer locations are loaded, the system must then write the Program
Buffer to Flash command at the sector address. Any other address and data combination aborts the Write
Buffer Programming operation. The device then begins programming. Data polling should be used while
monitoring the last address location loaded into the write buffer. DQ7, DQ6, DQ5, and DQ1 should be
monitored to determine the device status during Write Buffer Programming.
The write-buffer programming operation can be suspended using the standard program suspend/resume
commands. Upon successful completion of the Write Buffer Programming operation, the device is ready to
execute the next command.
The Write Buffer Programming Sequence can be aborted in the following ways:
„ Load a value that is greater than the page buffer size during the Number of Locations to Program step.
„ Write to an address in a sector different than the one specified during the Write-Buffer-Load command.
October 29, 2008 S29GL-N_01_12
S29GL-N MirrorBit® Flash Family
43
D at a
S hee t
„ Write an Address/Data pair to a different write-buffer-page than the one selected by the Starting Address
during the write buffer data loading stage of the operation.
„ Write data other than the Confirm Command after the specified number of data load cycles.
The abort condition is indicated by DQ1 = 1, DQ7 = DATA# (for the last address location loaded), DQ6 =
toggle, and DQ5= 0. A Write-to-Buffer-Abort Reset command sequence must be written to reset the device
for the next operation.
Note that the Secured Silicon Sector, autoselect, and CFI functions are unavailable when a program
operation is in progress. This flash device is capable of handling multiple write buffer programming operations
on the same write buffer address range without intervening erases. For applications requiring incremental bit
programming, a modified programming method is required; please contact your local Spansion
representative. Any bit in a write buffer address range cannot be programmed from 0 back to a 1.
Attempting to do so may cause the device to set DQ5=1, of cause the DQ7 and DQ6 status bits to indicate
the operation was successful. However, a succeeding read shows that the data is still 0. Only erase
operations can convert a 0 to a 1.
10.4.4
Accelerated Program
The device offers accelerated program operations through the WP#/ACC or ACC pin depending on the
particular product. When the system asserts VHH on the WP#/ACC or ACC pin. The device uses the higher
voltage on the WP#/ACC or ACC pin to accelerate the operation. Note that the WP#/ACC pin must not be at
VHH for operations other than accelerated programming, or device damage may result. WP# contains an
internal pull-up; when unconnected, WP# is at VIH.
Figure 10.1 on page 45 illustrates the algorithm for the program operation. Refer to the Erase and Program
Operations–AC Characteristics on page 64 for parameters, and Figure 15.3 on page 65 for timing diagrams.
44
S29GL-N MirrorBit® Flash Family
S29GL-N_01_12 October 29, 2008
Data
She et
Figure 10.1 Write Buffer Programming Operation
Write “Write to Buffer”
command and
Sector Address
Part of “Write to Buffer”
Command Sequence
Write number of addresses
to program minus 1(WC)
and Sector Address
Write first address/data
Yes
WC = 0 ?
No
Abort Write to
Buffer Operation?
Write to a different
sector address
Yes
Write to buffer ABORTED.
Must write “Write-to-buffer
Abort Reset” command
sequence to return
to read mode.
No
(Note 1)
Write next address/data pair
WC = WC - 1
Write program buffer to
flash sector address
Read DQ7 - DQ0 at
Last Loaded Address
DQ7 = Data?
No
Yes
No
No
DQ1 = 1?
DQ5 = 1?
Yes
Yes
Read DQ7 - DQ0 with
address = Last Loaded
Address
(Note 2)
DQ7 = Data?
Yes
No
(Note 3)
FAIL or ABORT
PASS
Notes
1. When Sector Address is specified, any address in the selected sector is acceptable. However, when loading Write-Buffer address
locations with data, all addresses must fall within the selected Write-Buffer Page.
2. DQ7 may change simultaneously with DQ5. Therefore, DQ7 should be verified.
3. If this flowchart location was reached because DQ5= 1, then the device FAILED. If this flowchart location was reached because DQ1= 1,
then the Write to Buffer operation was ABORTED. In either case, the proper reset command must be written before the device can begin
another operation. If DQ1= 1, write the Write-Buffer-Programming-Abort-Reset command. if DQ5= 1, write the Reset command.
4. See Table 10.1 on page 51 and Table 10.3 on page 53 for command sequences required for write buffer programming.
October 29, 2008 S29GL-N_01_12
S29GL-N MirrorBit® Flash Family
45
D at a
S hee t
Figure 10.2 Program Operation
START
Write Program
Command Sequence
Data Poll
from System
Embedded
Program
algorithm
in progress
Verify Data?
No
Yes
Increment Address
No
Last Address?
Yes
Programming
Completed
Note
See Table 10.1 on page 51 and Table 10.3 on page 53 for program command sequence.
10.5
Program Suspend/Program Resume Command Sequence
The Program Suspend command allows the system to interrupt a programming operation or a Write to Buffer
programming operation so that data can be read from any non-suspended sector. When the Program
Suspend command is written during a programming process, the device halts the program operation within
20 μs maximum and updates the status bits. Addresses are not required when writing the Program Suspend
command.
After the programming operation is suspended, the system can read array data from any non-suspended
sector. The Program Suspend command may also be issued during a programming operation while an erase
is suspended. In this case, data may be read from any addresses not in Erase Suspend or Program Suspend.
If a read is needed from the Secured Silicon Sector area (One-time Program area), then user must use the
proper command sequences to enter and exit this region. Note that the Secured Silicon Sector, autoselect,
and CFI functions are unavailable when a program operation is in progress.
The system may also write the autoselect command sequence when the device is in the Program Suspend
mode. The system can read as many autoselect codes as required. When the device exits the autoselect
mode, the device reverts to the Program Suspend mode, and is ready for another valid operation. See
Autoselect Command Sequence on page 42 for more information.
After the Program Resume command is written, the device reverts to programming. The system can
determine the status of the program operation using the DQ7 or DQ6 status bits, just as in the standard
program operation. See Write Operation Status on page 55 for more information.
The system must write the Program Resume command (address bits are don’t care) to exit the Program
Suspend mode and continue the programming operation. Further writes of the Resume command are
ignored. Another Program Suspend command can be written after the device resumes programming.
46
S29GL-N MirrorBit® Flash Family
S29GL-N_01_12 October 29, 2008
Data
She et
Figure 10.3 Program Suspend/Program Resume
Program Operation
or Write-to-Buffer
Sequence in Progress
Write address/data
XXXh/B0h
Write Program Suspend
Command Sequence
Command is also valid for
Erase-suspended-program
operations
Wait 20 μs
Read data as
required
No
Autoselect and SecSi Sector
read operations are also allowed
Data cannot be read from erase- or
program-suspended sectors
Done
reading?
Yes
Write address/data
XXXh/30h
Write Program Resume
Command Sequence
Device reverts to
operation prior to
Program Suspend
10.6
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase algorithm. The device does not require the system to
preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical erase. The system is not required to provide any
controls or timings during these operations. Table 10.1 on page 51 and Table 10.3 on page 53 show the
address and data requirements for the chip erase command sequence.
When the Embedded Erase algorithm is complete, the device returns to the read mode and addresses are no
longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, or DQ2.
Refer to Write Operation Status on page 55 for information on these status bits.
Any commands written during the chip erase operation are ignored. However, note that a hardware reset
immediately terminates the erase operation. If this occurs, the chip erase command sequence should be
reinitiated once the device returns to reading array data, to ensure data integrity.
Figure 10.4 on page 49 illustrates the algorithm for the erase operation. Refer to Table 15.3 on page 67 for
parameters, and Figure 15.7 on page 69 for timing diagrams.
October 29, 2008 S29GL-N_01_12
S29GL-N MirrorBit® Flash Family
47
D at a
10.7
S hee t
Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two additional unlock cycles are written, and are then followed
by the address of the sector to be erased, and the sector erase command. Table 10.1 on page 51 and
Table 10.3 on page 53 shows the address and data requirements for the sector erase command sequence.
The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm
automatically programs and verifies the entire memory for an all zero data pattern prior to electrical erase.
The system is not required to provide any controls or timings during these operations.
After the command sequence is written, a sector erase time-out of 50 µs occurs. During the time-out period,
additional sector addresses and sector erase commands may be written. Loading the sector erase buffer may
be done in any sequence, and the number of sectors may be from one sector to all sectors. The time between
these additional cycles must be less than 50 µs, otherwise erasure may begin. Any sector erase address and
command following the exceeded time-out may or may not be accepted. It is recommended that processor
interrupts be disabled during this time to ensure all commands are accepted. The interrupts can be
re-enabled after the last Sector Erase command is written. Any command other than Sector Erase or
Erase Suspend during the time-out period resets the device to the read mode. Note that the Secured
Silicon Sector, autoselect, and CFI functions are unavailable when an erase operation is in progress.
The system must rewrite the command sequence and any additional addresses and commands.
The system can monitor DQ3 to determine if the sector erase timer has timed out (See the section on DQ3:
Sector Erase Timer.). The time-out begins from the rising edge of the final WE# pulse in the command
sequence.
When the Embedded Erase algorithm is complete, the device returns to reading array data and addresses
are no longer latched. The system can determine the status of the erase operation by reading DQ7, DQ6, or
DQ2 in the erasing sector. Refer to the Write Operation Status section for information on these status bits.
Once the sector erase operation begins, only the Erase Suspend command is valid. All other commands are
ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the
sector erase command sequence should be reinitiated once the device returns to reading array data, to
ensure data integrity.
Figure 10.4 on page 49 illustrates the algorithm for the erase operation. Refer to Table 15.3 on page 67 for
parameters, and Figure 15.7 on page 69 for timing diagrams.
48
S29GL-N MirrorBit® Flash Family
S29GL-N_01_12 October 29, 2008
Data
She et
Figure 10.4 Erase Operation
START
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
Embedded
Erase
algorithm
in progress
No
Data = FFh?
Yes
Erasure Completed
Notes
1. See Table 10.1 and Table 10.3 for program command sequence.
2. See the section on DQ3 for information on the sector erase timer.
October 29, 2008 S29GL-N_01_12
S29GL-N MirrorBit® Flash Family
49
D at a
10.8
S hee t
Erase Suspend/Erase Resume Commands
The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then read
data from, or program data to, any sector not selected for erasure. This command is valid only during the
sector erase operation, including the 50 µs time-out period during the sector erase command sequence. The
Erase Suspend command is ignored if written during the chip erase operation or Embedded Program
algorithm.
When the Erase Suspend command is written during the sector erase operation, the device requires a typical
of 5 μs (maximum of 20 μs) to suspend the erase operation. However, when the Erase Suspend command is
written during the sector erase time-out, the device immediately terminates the time-out period and suspends
the erase operation.
After the erase operation is suspended, the device enters the erase-suspend-read mode. The system can
read data from or program data to any sector not selected for erasure. (The device erase suspends all
sectors selected for erasure.) Reading at any address within erase-suspended sectors produces status
information on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2 together, to determine if a sector is
actively erasing or is erase-suspended. Refer to Write Operation Status on page 55 for information on these
status bits.
After an erase-suspended program operation is complete, the device returns to the erase-suspend-read
mode. The system can determine the status of the program operation using the DQ7 or DQ6 status bits, just
as in the standard word program operation. Refer to Write Operation Status on page 55 for more information.
In the erase-suspend-read mode, the system can also issue the autoselect command sequence. Refer to the
Autoselect Mode on page 29 and Autoselect Command Sequence on page 42 sections for details.
To resume the sector erase operation, the system must write the Erase Resume command. Further writes of
the Resume command are ignored. Another Erase Suspend command can be written after the chip resumes
erasing.
During an erase operation, this flash device performs multiple internal operations which are invisible to the
system. When an erase operation is suspended, any of the internal operations that were not fully completed
must be restarted. As such, if this flash device is continually issued suspend/resume commands in rapid
succession, erase progress is impeded as a function of the number of suspends. The result is a longer
cumulative erase time than without suspends. Note that the additional suspends do not affect device reliability
or future performance. In most systems rapid erase/suspend activity occurs only briefly. In such cases, erase
performance is not significantly impacted.
50
S29GL-N MirrorBit® Flash Family
S29GL-N_01_12 October 29, 2008
Data
10.9
She et
Command Definitions
Command
Sequence
(Note 1)
Cycles
Table 10.1 Command Definitions (x16 Mode, BYTE# = VIH)
Bus Cycles (Notes 2–5)
First
1
RA
Reset (Note 6)
Autoselect (Note 7)
Read (Note 5)
Second
Third
Fourth
Fifth
1
XXX
F0
Manufacturer ID
4
555
AA
2AA
55
555
90
X00
0001
Device ID (Note 8)
6
555
AA
2AA
55
555
90
X01
227E
Device ID
4
555
AA
2AA
55
555
90
X01
(Note 17)
Secured Silicon Sector Factory Protect
4
555
AA
2AA
55
555
90
X03
(Note 9)
Sector Protect Verify
(Note 10)
4
555
AA
2AA
55
555
90
(SA)X02
00/01
3
555
AA
2AA
55
555
88
Enter Secured Silicon Sector Region
Sixth
RD
Exit Secured Silicon Sector Region
4
555
AA
2AA
55
555
90
XXX
00
Program
4
555
AA
2AA
55
555
A0
PA
PD
Write to Buffer (Note 11)
3
555
AA
2AA
55
SA
25
SA
WC
Program Buffer to Flash
1
SA
29
Write to Buffer Abort Reset (Note 12)
3
555
AA
2AA
55
555
F0
Unlock Bypass
3
555
AA
2AA
55
555
20
Unlock Bypass Program (Note 13)
2
XXX
A0
PA
PD
Unlock Bypass Reset (Note 14)
2
XXX
90
XXX
00
X0E
(Note 18)
X0F
(Note 18)
PA
PD
WBL
PD
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Sector Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
Program/Erase Suspend (Note 15)
1
XXX
B0
Program/Erase Resume (Note 16)
1
XXX
30
CFI Query (Note 17)
1
55
98
Legend
X = Don’t care
RA = Read Address of memory location to be read.
RD = Read Data read from location RA during read operation.
PA = Program Address. Addresses latch on falling edge of WE# or CE# pulse,
whichever happens later.
Notes
1. See Table 8.1 on page 17 for description of bus operations.
2. All values are in hexadecimal.
3. Shaded cells indicate read cycles. All others are write cycles.
4. During unlock and command cycles, when lower address bits are 555 or
2AA as shown in table, address bits above A11 and data bits above DQ7
are don’t care.
5. No unlock or command cycles required when device is in read mode.
6. Reset command is required to return to read mode (or to erase-suspendread mode if previously in Erase Suspend) when device is in autoselect
mode, or if DQ5 goes high while device is providing status information.
7. Fourth cycle of the autoselect command sequence is a read cycle. Data
bits DQ15–DQ8 are don’t care. Except for RD, PD and WC. See Autoselect
Command Sequence on page 42 for more information.
8. For S29GL064N and S29GL032N, Device ID must be read in three cycles.
9. Refer to Table 8.9 on page 29 for data indicating Secured Silicon Sector
factory protect status.
10. Data is 00h for an unprotected sector and 01h for a protected sector.
October 29, 2008 S29GL-N_01_12
PD = Program Data for location PA. Data latches on rising edge of WE# or
CE# pulse, whichever happens first.
SA = Sector Address of sector to be verified (in autoselect mode) or erased.
Address bits A21–A15 uniquely select any sector.
WBL = Write Buffer Location. Address must be within same write buffer page
as PA.
WC = Word Count. Number of write buffer locations to load minus 1.
11. Total number of cycles in command sequence is determined by number of
words written to write buffer. Maximum number of cycles in command
sequence is 21, including Program Buffer to Flash command.
12. Command sequence resets device for next command after aborted writeto-buffer operation.
13. Unlock Bypass command is required prior to Unlock Bypass Program
command.
14. Unlock Bypass Reset command is required to return to read mode when
device is in unlock bypass mode.
15. System may read and program in non-erasing sectors, or enter autoselect
mode, when in Erase Suspend mode. Erase Suspend command is valid
only during a sector erase operation.
16. Erase Resume command is valid only during Erase Suspend mode.
17. Command is valid when device is ready to read array data or when device
is in autoselect mode.
18. Refer to Table 8.9 on page 29, for individual Device IDs per device density
and model number.
S29GL-N MirrorBit® Flash Family
51
D at a
S hee t
Volatile Sector
Protection (DYB)
Global Volatile
Sector Protection
Freeze (PPB Lock)
Non-Volatile Sector
Protection (PPB)
Password
Protection
Lock
Register Bits
Command Sequence
(Notes)
Cycles
Table 10.2 Sector Protection Commands (x16)
Bus Cycles (Notes 2–4)
First
Second
Third
Fourth
Addr
Data
Addr
Data
Addr
Data
AA
2AA
55
555
40
XXX
Data
555
60
Addr
Data
Command Set Entry
(Note 5)
3
555
Program (Note 6)
2
XX
A0
Read (Note 6)
1
00
Data
Command Set Exit
(Note 7)
2
XX
90
XX
00
Command Set Entry
(Note 5)
3
555
AA
2AA
55
Program (Note 8)
2
XX
A0
PWAx
PWDx
Read (Note 9)
4
XXX
PWD0
01
PWD1
02
PWD2
03
PWD3
Unlock (Note 10)
7
00
25
00
03
00
PWD0
01
PWD1
Command Set Exit
(Note 7)
2
XX
90
XX
00
Command Set Entry
(Note 5)
3
555
AA
2AA
55
555
C0
PPB Program (Note 11)
2
XX
A0
SA
00
All PPB Erase
(Notes 11, 12)
2
XX
80
00
30
PPB Status Read
1
SA
RD(0)
Command Set Exit
(Note 7)
2
XX
90
XX
00
Command Set Entry
(Note 5)
3
555
AA
2AA
55
555
50
XX
00
555
E0
PPB Lock Bit Set
2
XX
A0
PPB Lock Bit Status Read
1
XXX
RD(0)
Command Set Exit
(Note 7)
2
XX
90
XX
00
Command Set Entry
(Note 5)
3
555
AA
2AA
55
DYB Set
2
XX
A0
SA
00
DYB Clear
2
XX
A0
SA
01
DYB Status Read
1
SA
RD(0)
Command Set Exit
(Note 7)
2
XX
90
XX
00
Legend
X = Don’t care.
RA = Address of the memory location to be read.
SA = Sector Address. Any address that falls within a specified sector. See
Tables 8.2–8.8 for sector address ranges.
Notes
1. All values are in hexadecimal.
Fifth
Sixth
Seventh
Addr
Data
Addr
Data
Addr
Data
02
PWD2
03
PWD3
00
29
PWA = Password Address. Address bits A1 and A0 are used to select each 16bit portion of the 64-bit entity.
PWD = Password Data.
RD(0) = DQ0 protection indicator bit. If protected, DQ0 = 0. If unprotected,
DQ0 = 1.
2. Shaded cells indicate read cycles.
7. Exit command must be issued to reset the device into read mode; device
may otherwise be placed in an unknown state.
3. Address and data bits not specified in table, legend, or notes are don’t
cares (each hex digit implies 4 bits of data).
8. Entire two bus-cycle sequence must be entered for each portion of the
password.
4. Writing incorrect address and data values or writing them in the improper
sequence may place the device in an unknown state. The system must
write the reset command to return the device to reading array data.
9. Full address range is required for reading password.
5. Entry commands are required to enter a specific mode to enable
instructions only available within that mode.
6. No unlock or command cycles required when bank is reading array data.
52
10. Password may be unlocked or read in any order. Unlocking requires the full
password (all seven cycles).
11. ACC must be at VIH when setting PPB or DYB.
12. “All PPB Erase” command pre-programs all PPBs before erasure to prevent
over-erasure.
S29GL-N MirrorBit® Flash Family
S29GL-N_01_12 October 29, 2008
Data
She et
Command Sequence
(Note 1)
Cycles
Table 10.3 Command Definitions (x8 Mode, BYTE# = VIL)
Bus Cycles (Notes 2–5)
First
Second
Addr
Data
Third
Fourth
Addr
Data
Addr
Data
Addr
Fifth
Data
1
RA
RD
Reset (Note 7)
1
XXX
F0
Manufacturer ID
4
AAA
AA
555
55
AAA
90
X00
01
Device ID (Note 9)
6
AAA
AA
555
55
AAA
90
X02
7E
Device ID
4
AAA
AA
555
55
AAA
90
X02
(Note 10)
Secured Silicon Sector Factory Protect
4
AAA
AA
555
55
AAA
90
X06
Sector Protect Verify
(Note 11)
4
AAA
AA
555
55
AAA
90
(SA)X04
00/01
XXX
00
Autoselect (Note 8)
Read (Note 6)
Sixth
Addr
Data
Addr
Data
X1C
(Note 17)
X1E
(Note 17)
Enter Secured Silicon Sector Region
3
AAA
AA
555
55
AAA
88
Exit Secured Silicon Sector Region
4
AAA
AA
555
55
AAA
90
Program
4
AAA
AA
555
55
AAA
A0
PA
PD
Write to Buffer (Note 12)
3
AAA
AA
555
55
SA
25
SA
BC
PA
PD
WBL
PD
Program Buffer to Flash
1
SA
29
Write to Buffer Abort Reset (Note 13)
3
AAA
AA
555
55
AAA
F0
Chip Erase
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
AAA
10
Sector Erase
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
SA
30
Unlock Bypass
AAA
AA
555
55
AAA
20
Unlock Bypass Program
XXX
A0
PA
PD
XXX
00
Unlock Bypass RESET
XXX
90
Program/Erase Suspend (Note 14)
1
XXX
B0
Program/Erase Resume (Note 15)
1
XXX
30
CFI Query (Note 16)
1
AA
98
Legend
X = Don’t care
RA = Read Address of memory location to be read.
RD = Read Data read from location RA during read operation.
PA = Program Address. Addresses latch on falling edge of WE# or CE# pulse,
whichever happens later.
Notes
1. See Table 8.1 on page 17 for description of bus operations.
PD = Program Data for location PA. Data latches on rising edge of WE# or
CE# pulse, whichever happens first.
SA = Sector Address of sector to be verified (in autoselect mode) or erased.
Address bits A21–A15 uniquely select any sector.
WBL = Write Buffer Location. Address must be within same write buffer page
as PA.
BC = Byte Count. Number of write buffer locations to load minus 1.
2. All values are in hexadecimal.
10. Refer to Table 8.9 on page 29, for data indicating Secured Silicon Sector
factory protect status.
3. Shaded cells indicate read cycles. All others are write cycles.
11. Data is 00h for an unprotected sector and 01h for a protected sector.
4. During unlock and command cycles, when lower address bits are 555 or
AAA as shown in table, address bits above A11 are don’t care.
12. Total number of cycles in command sequence is determined by number of
bytes written to write buffer. Maximum number of cycles in command
sequence is 37, including Program Buffer to Flash command.
5. Unless otherwise noted, address bits A21–A11 are don’t cares.
6. No unlock or command cycles required when device is in read mode.
7. Reset command is required to return to read mode (or to erase-suspendread mode if previously in Erase Suspend) when device is in autoselect
mode, or if DQ5 goes high while device is providing status information.
8. Fourth cycle of autoselect command sequence is a read cycle. Data bits
DQ15–DQ8 are don’t care. See Autoselect Command Sequence
on page 42 for more information.
9. For S29GL064N and S29GL032A Device ID must be read in three cycles.
13. Command sequence resets device for next command after aborted writeto-buffer operation.
14. System may read and program in non-erasing sectors, or enter autoselect
mode, when in Erase Suspend mode. Erase Suspend command is valid
only during a sector erase operation.
15. Erase Resume command is valid only during Erase Suspend mode.
16. Command is valid when device is ready to read array data or when device
is in autoselect mode.
17. Refer to Table 8.9 on page 29, for individual Device IDs per device density
and model number.
October 29, 2008 S29GL-N_01_12
S29GL-N MirrorBit® Flash Family
53
D at a
S hee t
Volatile Sector
Protection
(DYB)
Global Volatile
Sector Protection
Freeze (PPB Lock)
Non-Volatile
Sector Protection
(PPB)
Password
Protection
Lock
Register
Bits
Command Sequence
(Notes)
Command Set Entry
(Note 5)
Program (Note 6)
Read (Note 6)
Command Set Exit
(Note 7)
Command Set Entry
(Note 5)
Program (Note 8)
Cycles
Table 10.4 Sector Protection Commands (x8)
1st/8th
Addr Data
3
AAA
AA
555
55
2
1
XXX
00
A0
Data
XXX
Data
2
XXX
90
XXX
00
3
AAA
AA
555
2
XXX
00
07
00
05
Read (Note 9)
8
Unlock (Note 10)
11
Command Set Exit
(Note 7)
Command Set Entry
(Note 5)
PPB Program (Note 11)
All PPB Erase
(Notes 11, 12)
PPB Status Read
Command Set Exit
(Note 7)
Command Set Entry
(Note 5)
PPB Lock Bit Set
PPB Lock Bit Status
Read
Command Set Exit
(Note 7)
Command Set Entry
(Note 5)
DYB Set
DYB Clear
DYB Status Read
Command Set Exit
(Note 7)
2nd/9th
Addr
Data
A0
PWAx
PWD0
01
PWD7
25
00
PWD5
06
Bus Cycles (Notes 2–5)
3rd/10th
4th/11th
5th
Addr
Data Addr Data Addr Data
AAA
40
6th
Addr Data
Addr
7th
Data
55
AAA
60
PWDx
PWD1
02
PWD2
03
PWD3
04
PWD4
05
PWD5
06
PWD6
03
PWD6
00
07
PWD0
PWD7
01
00
PWD1
29
02
PWD2
03
PWD3
04
PWD4
AAA
C0
AAA
50
AAA
E0
2
XX
90
XX
00
3
AAA
AA
555
55
2
XXX
A0
SA
00
2
XXX
80
00
30
1
SA
RD(0)
2
XXX
90
XXX
00
3
AAA
AA
555
55
2
XXX
A0
XXX
00
1
XXX
RD(0)
2
XXX
90
XX
00
3
AAA
AA
555
55
2
2
1
XXX
XXX
SA
A0
A0
RD(0)
SA
SA
00
01
2
XXX
90
XXX
00
Legend
X = Don’t care.
RA = Address of the memory location to be read.
SA = Sector Address. Any address that falls within a specified sector. See
Tables 8.2–8.8 for sector address ranges.
Notes
1. All values are in hexadecimal.
PWA = Password Address. Address bits A1 and A0 are used to select each 16bit portion of the 64-bit entity.
PWD = Password Data.
RD(0) = DQ0 protection indicator bit. If protected, DQ0 = 0. If unprotected,
DQ0 = 1.
2. Shaded cells indicate read cycles.
7. Exit command must be issued to reset the device into read mode; device
may otherwise be placed in an unknown state.
3. Address and data bits not specified in table, legend, or notes are don’t
cares (each hex digit implies 4 bits of data).
8. Entire two bus-cycle sequence must be entered for each portion of the
password.
4. Writing incorrect address and data values or writing them in the improper
sequence may place the device in an unknown state. The system must
write the reset command to return the device to reading array data.
9. Full address range is required for reading password.
5. Entry commands are required to enter a specific mode to enable
instructions only available within that mode.
6. No unlock or command cycles required when bank is reading array data.
54
10. Password may be unlocked or read in any order. Unlocking requires the full
password (all seven cycles).
11. ACC must be at VIH when setting PPB or DYB.
12. “All PPB Erase” command pre-programs all PPBs before erasure to prevent
over-erasure.
S29GL-N MirrorBit® Flash Family
S29GL-N_01_12 October 29, 2008
Data
She et
10.10 Write Operation Status
The device provides several bits to determine the status of a program or erase operation: DQ2, DQ3, DQ5,
DQ6, and DQ7. Table 10.5 on page 60 and the following subsections describe the function of these bits. DQ7
and DQ6 each offer a method for determining whether a program or erase operation is complete or in
progress. The device also provides a hardware-based output signal, RY/BY#, to determine whether an
Embedded Program or Erase operation is in progress or is completed.
10.11 DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Program or Erase algorithm
is in progress or completed, or whether the device is in Erase Suspend. Data# Polling is valid after the rising
edge of the final WE# pulse in the command sequence.
During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum
programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When the
Embedded Program algorithm is complete, the device outputs the datum programmed to DQ7. The system
must provide the program address to read valid status information on DQ7. If a program address falls within a
protected sector, Data# Polling on DQ7 is active for approximately 1 µs, then the device returns to the read
mode.
During the Embedded Erase algorithm, Data# Polling produces a 0 on DQ7. When the Embedded Erase
algorithm is complete, or if the device enters the Erase Suspend mode, Data# Polling produces a 1 on DQ7.
The system must provide an address within any of the sectors selected for erasure to read valid status
information on DQ7.
After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling
on DQ7 is active for approximately 100 µs, then the device returns to the read mode. If not all selected
sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the
selected sectors that are protected. However, if the system reads DQ7 at an address within a protected
sector, the status may not be valid.
Just prior to the completion of an Embedded Program or Erase operation, DQ7 may change asynchronously
with DQ0–DQ6 while Output Enable (OE#) is asserted low. That is, the device may change from providing
status information to valid data on DQ7. Depending on when the system samples the DQ7 output, it may read
the status or valid data. Even if the device completed the program or erase operation and DQ7 has valid data,
the data outputs on DQ0–DQ6 may be still invalid. Valid data on DQ0–DQ7 appears on successive read
cycles.
Table 10.5 on page 60 shows the outputs for Data# Polling on DQ7. Figure 10.5 on page 56 shows the Data#
Polling algorithm. Figure 15.8 on page 69 shows the Data# Polling timing diagram.
October 29, 2008 S29GL-N_01_12
S29GL-N MirrorBit® Flash Family
55
D at a
S hee t
Figure 10.5 Data# Polling Algorithm
START
Read DQ15–DQ0
Addr = VA
DQ7 = Data?
Yes
No
No
DQ5 = 1?
Yes
Read DQ15–DQ0
Addr = VA
DQ7 = Data?
Yes
No
FAIL
PASS
Notes
1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector address within the sector being
erased. During chip erase, a valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = 1 because DQ7 may change simultaneously with DQ5.
10.12 RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin which indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a
pull-up resistor to VCC.
If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the
Erase Suspend mode.) If the output is high (Ready), the device is in the read mode, the standby mode, or in
the erase-suspend-read mode. Table 10.5 on page 60 shows the outputs for RY/BY#.
56
S29GL-N MirrorBit® Flash Family
S29GL-N_01_12 October 29, 2008
Data
She et
10.13 DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or complete,
or whether the device entered the Erase Suspend mode. Toggle Bit I may be read at any address, and is
valid after the rising edge of the final WE# pulse in the command sequence (prior to the program or erase
operation), and during the sector erase time-out.
During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause
DQ6 to toggle. The system may use either OE# or CE# to control the read cycles. When the operation is
complete, DQ6 stops toggling.
After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for
approximately 100 µs, then returns to reading array data. If not all selected sectors are protected, the
Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are
protected.
The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erasesuspended. When the device is actively erasing (that is, the Embedded Erase algorithm is in progress), DQ6
toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the system must
also use DQ2 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use
DQ7 (see DQ7: Data# Polling on page 55).
If a program address falls within a protected sector, DQ6 toggles for approximately 1 µs after the program
command sequence is written, then returns to reading array data.
DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Program
algorithm is complete.
Table 10.5 on page 60 shows the outputs for Toggle Bit I on DQ6. Figure 10.6 on page 58 shows the toggle
bit algorithm. Figure 15.9 on page 70 shows the toggle bit timing diagrams. Figure 15.10 on page 70 shows
the differences between DQ2 and DQ6 in graphical form. See also the subsection on DQ2: Toggle Bit II
on page 58.
October 29, 2008 S29GL-N_01_12
S29GL-N MirrorBit® Flash Family
57
D at a
S hee t
Figure 10.6 Toggle Bit Algorithm
START
Read DQ7–DQ0
Read DQ7–DQ0
Toggle Bit
= Toggle?
No
Yes
No
DQ5 = 1?
Yes
Read DQ7–DQ0
Twice
Toggle Bit
= Toggle?
No
Yes
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Note
The system should recheck the toggle bit even if DQ5 = 1 because the toggle bit may stop toggling as DQ5 changes to 1. See the
subsections on DQ6 and DQ2 for more information.
10.14 DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that
is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit II is
valid after the rising edge of the final WE# pulse in the command sequence.
DQ2 toggles when the system reads at addresses within those sectors that were selected for erasure. (The
system may use either OE# or CE# to control the read cycles.) But DQ2 cannot distinguish whether the
sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the device is
actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus,
both status bits are required for sector and mode information. Refer to Table 10.5 on page 60 to compare
outputs for DQ2 and DQ6.
58
S29GL-N MirrorBit® Flash Family
S29GL-N_01_12 October 29, 2008
Data
She et
Figure 10.6 on page 58 shows the toggle bit algorithm in flowchart form. Figure 15.9 on page 70 shows the
toggle bit timing diagram. Figure 15.10 on page 70 shows the differences between DQ2 and DQ6 in graphical
form.
10.15 Reading Toggle Bits DQ6/DQ2
Refer to Figure 10.6 on page 58 for the following discussion. Whenever the system initially begins reading
toggle bit status, it must read DQ7–DQ0 at least twice in a row to determine whether a toggle bit is toggling.
Typically, the system would note and store the value of the toggle bit after the first read. After the second
read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling,
the device completed the program or erase operation. The system can read array data on DQ7–DQ0 on the
following read cycle.
However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the
system also should note whether the value of DQ5 is high (see the section on DQ5). If it is, the system should
then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as
DQ5 went high. If the toggle bit is no longer toggling, the device successfully completed the program or erase
operation. If it is still toggling, the device did not completed the operation successfully, and the system must
write the reset command to return to reading array data.
The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not
gone high. The system may continue to monitor the toggle bit and DQ5 through successive read cycles,
determining the status as described in the previous paragraph. Alternatively, it may choose to perform other
system tasks. In this case, the system must start at the beginning of the algorithm when it returns to
determine the status of the operation (top of Figure 10.6 on page 58).
10.16 DQ5: Exceeded Timing Limits
DQ5 indicates whether the program, erase, or write-to-buffer time exceeded a specified internal pulse count
limit. Under these conditions DQ5 produces a 1. indicating that the program or erase cycle was not
successfully completed.
The device may output a 1 on DQ5 if the system tries to program a 1 to a location that was previously
programmed to 0. Only an erase operation can change a 0 back to a 1. Under this condition, the device
halts the operation, and when the timing limit is exceeded, DQ5 produces a 1.
In all these cases, the system must write the reset command to return the device to the reading the array (or
to erase-suspend-read if the device was previously in the erase-suspend-program mode).
10.17 DQ3: Sector Erase Timer
After writing a sector erase command sequence, the system may read DQ3 to determine whether or not
erasure began. (The sector erase timer does not apply to the chip erase command.) If additional sectors are
selected for erasure, the entire time-out also applies after each additional sector erase command. When the
time-out period is complete, DQ3 switches from a 0 to a 1. If the time between additional sector erase
commands from the system can be assumed to be less than 50 µs, the system need not monitor DQ3. See
also the Sector Erase Command Sequence section.
After the sector erase command is written, the system should read the status of DQ7 (Data# Polling) or DQ6
(Toggle Bit I) to ensure that the device accepted the command sequence, and then read DQ3. If DQ3 is 1, the
Embedded Erase algorithm has begun; all further commands (except Erase Suspend) are ignored until the
erase operation is complete. If DQ3 is 0, the device accepts additional sector erase commands. To ensure
the command is accepted, the system software should check the status of DQ3 prior to and following each
subsequent sector erase command. If DQ3 is high on the second status check, the last command might not
have been accepted.
Table 10.5 on page 60 shows the status of DQ3 relative to the other status bits.
October 29, 2008 S29GL-N_01_12
S29GL-N MirrorBit® Flash Family
59
D at a
S hee t
10.18 DQ1: Write-to-Buffer Abort
DQ1 indicates whether a Write-to-Buffer operation was aborted. Under these conditions DQ1 produces a 1.
The system must issue the Write-to-Buffer-Abort-Reset command sequence to return the device to reading
array data. See Write Buffer on page 18 for more details.
Table 10.5 Write Operation Status
Status
Standard Mode
Program Suspend Mode
Erase Suspend Mode
Write-toBuffer
Embedded Program Algorithm
Embedded Erase Algorithm
ProgramSuspend
Read
EraseSuspend
Read
DQ7
(Note 2)
DQ6
DQ5
(Note 1)
DQ3
DQ2
(Note 2)
DQ1
RY/BY#
DQ7#
Toggle
0
N/A
No toggle
0
0
0
Toggle
0
1
Toggle
N/A
0
Program-Suspended
Sector
Invalid (not allowed)
1
Data
1
Non-Program
Suspended Sector
Erase-Suspended Sector
1
No toggle
Non-Erase Suspended
Sector
0
N/A
Toggle
N/A
Data
1
1
Erase-Suspend-Program
(Embedded Program)
DQ7#
Toggle
0
N/A
N/A
N/A
0
Busy (Note 3)
DQ7#
Toggle
0
N/A
N/A
0
0
Abort (Note 4)
DQ7#
Toggle
0
N/A
N/A
1
0
Notes
1. DQ5 switches to 1 when an Embedded Program, Embedded Erase, or Write-to-Buffer operation exceeded the maximum timing limits. Refer to the section on
DQ5 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
3. The Data# Polling algorithm should be used to monitor the last loaded write-buffer address location.
4. DQ1 switches to 1 when the device aborts the write-to-buffer operation.
60
S29GL-N MirrorBit® Flash Family
S29GL-N_01_12 October 29, 2008
Data
She et
11. Absolute Maximum Ratings
Parameter
Rating
Storage Temperature, Plastic Packages
–65°C to +150°C
Ambient Temperature with Power Applied
–65°C to +125°C
VCC (Note 1)
–0.5 V to +4.0 V
Voltage with Respect to Ground
A9, ACC and RESET# (Note 2)
–0.5 V to +12.5 V
All other pins (Note 1)
–0.5 V to VCC+0.5 V
Output Short Circuit Current
(Note 3)
200 mA
Notes
1. Minimum DC voltage on input or I/Os is –0.5 V. During voltage transitions, inputs or I/Os may overshoot VSS to –2.0 V for periods of up to
20 ns. See Figure 11.1. Maximum DC voltage on input or I/Os is VCC + 0.5 V. During voltage transitions, input or I/O pins may overshoot
to VCC + 2.0 V for periods up to 20 ns. See Figure 11.2.
2. Minimum DC input voltage on pins A9, ACC, and RESET# is –0.5 V. During voltage transitions, A9, ACC, and RESET# may overshoot
VSS to –2.0 V for periods of up to 20 ns. See Figure 11.1. Maximum DC input voltage on pin A9, ACC, and RESET# is +12.5 V which may
overshoot to +14.0 V for periods up to 20 ns.
3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second.
4. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only;
functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not
implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability.
Figure 11.1 Maximum Negative Overshoot Waveform
20 ns
20 ns
+0.8 V
–0.5 V
–2.0 V
20 ns
Figure 11.2 Maximum Positive Overshoot Waveform
20 ns
VCC
+2.0 V
VCC
+0.5 V
2.0 V
20 ns
20 ns
12. Operating Ranges
Parameter
Ambient Temperature (TA), Industrial (I) Devices
Supply Voltages
Range
–40°C to +85°C
VCC for full voltage range
+2.7 V to +3.6 V
VIO
+1.65 to +3.6 V
Notes
1. Operating ranges define those limits between which the functionality of the device is guaranteed.
2. VIO input voltage always must be lower than VCC input voltage.
October 29, 2008 S29GL-N_01_12
S29GL-N MirrorBit® Flash Family
61
D at a
S hee t
13. DC Characteristics
Table 13.1 DC Characteristics, CMOS Compatible
Parameter
Symbol
Parameter Description (Notes)
Test Conditions
Min
Input Load Current (Note 1)
VIN = VSS to VCC,
VCC = VCC max
ILIT
A9 Input Load Current
VCC = VCC max; A9 = 12.5 V
ILO
Output Leakage Current
VOUT = VSS to VCC, VCC = VCC max
ICC2
VCC Initial Read Current (Note 1)
VCC Intra-Page Read Current (Note 1)
Max
WP#/ACC: ±2.0 µA
ILI
ICC1
Typ
Others: ±1.0 µA
Unit
µA
35
µA
±1.0
µA
CE# = VIL, OE# = VIH, VCC = VCC max,
f = 1 MH
6
10
CE# = VIL, OE# = VIH, VCC = VCC max,
f = 5 MHz
25
30
CE# = VIL, OE# = VIH, VCC = VCC max,
f = 10 MHz
45
50
CE# = VIL, OE# = VIH, VCC = VCC max
f = 10 MHz
1
10
CE# = VIL, OE# = VIH, VCC = VCC max
f = 33 MH
5
20
mA
mA
ICC3
VCC Active Erase/Program Current
(Notes 2, 3)
CE# = VIL, OE# = VIH, VCC = VCC max
50
60
mA
ICC4
VCC Standby Current
VCC = VCC max; VIO = VCC; OE# = VIH;
VIL = (VSS+0.3V) / –0.1V;
CE#, RESET# = VCC ± 0.3 V
1
5
µA
ICC5
VCC Reset Current
VCC = VCCmax, VIO = VCC,
VIL = (VSS+0.3V) / –0.1V;
RESET# = VSS ± 0.3 V
1
5
µA
ICC6
Automatic Sleep Mode (Note 4)
VCC = VCCmax, VIO = VCC,
VIH = VCC ± 0.3 V;
VIL = (VSS+0.3V) / –0.1V;
WP#/ACC = VIH
1
5
µA
IACC
ACC Accelerated Program Current
CE# = VIL, OE# = VIH,
VCC = VCCmax,
WP#/ACC = VIH
WP#/
ACC
10
20
mA
VCC
50
60
mA
VIL
Input Low Voltage 1 (Note 5)
–0.1
0.3 x VIO
V
VIH
Input High Voltage 1 (Note 5)
0.7 VIO
VIO + 0.3
V
VHH
Voltage for ACC Program Acceleration VCC = 2.7 –3.6 V
11.5
12.5
V
VID
Voltage for Autoselect
VCC = 2.7 –3.6 V
11.5
12.5
V
VOL
Output Low Voltage (Note 5)
IOL = 100 µA
0.15 x VIO
V
Output High Voltage (Note 5)
IOH = –100 µA
VOH1
VOH2
VLKO
Low VCC Lock-Out Voltage (Note 3)
0.85
VIO
2.3
V
2.5
V
Notes
1. ICC current listed is typically less than 5.5 mA/MHz, with OE# at VIH.
2. ICC active while Embedded Erase, Embedded Program, or Write Buffer Programming is in progress.
3. Not 100% tested.
4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns.
5. VIO = 1.65–1.95 V or 2.7–3.6 V.
6. VCC = 3 V and VIO = 3 V or 1.8 V. When VIO is at 1.8 V, I/Os cannot operate at 3 V.
62
S29GL-N MirrorBit® Flash Family
S29GL-N_01_12 October 29, 2008
Data
She et
14. Test Conditions
Figure 14.1 Test Setup
3.3 V
2.7 kΩ
Device
Under
Test
CL
6.2 kΩ
Note
Diodes are IN3064 or equivalent.
Table 14.1 Test Specifications
Test Condition
All Speeds
Output Load
Output Load Capacitance, CL
(including jig capacitance)
Input Rise and Fall Times
30
pF
5
ns
0.0 or VIO
V
Input timing measurement reference levels
0.5 VIO
V
Output timing measurement reference levels
0.5 VIO
V
Input Pulse Levels
14.1
Unit
1 TTL gate
Key to Switching Waveforms
Waveform
Inputs
Outputs
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
Figure 14.2 Input Waveforms and Measurement Levels
VCC
Input
0.5 VIO
Measurement Level
0.5 VIO
Output
0.0 V
October 29, 2008 S29GL-N_01_12
S29GL-N MirrorBit® Flash Family
63
D at a
S hee t
15. AC Characteristics
Table 15.1 Read-Only Operations
Parameter
Speed Options
JEDEC
Std.
tAVAV
tRC
Read Cycle Time (Note 1)
tAVQV
tACC
Address to Output Delay
tELQV
tCE
Chip Enable to Output Delay
tPACC
Description
Test Setup
90
110
Unit
Min
90
110
ns
CE#, OE# = VIL
Max
90
110
ns
OE# = VIL
Max
90
110
ns
VIO = VCC = 3 V
Page Access Time
VIO = 1.8 V, VCC = 3 V
tGLQV
tOE
Output Enable to Output Delay
VIO = VCC = 3 V
VIO = 1.8 V, VCC = 3 V
Max
Max
25
25
—
30
25
25
—
30
ns
ns
tEHQZ
tDF
Chip Enable to Output High Z (Note 1)
Max
20
ns
tGHQZ
tDF
Output Enable to Output High Z (Note 1)
Max
20
ns
tAXQX
tOH
Output Hold Time From Addresses, CE# or OE#,
Whichever Occurs First
Min
0
ns
Output Enable Hold
Time
Read
Min
0
ns
tOEH
Toggle and
Data# Polling
Min
10
ns
(Note 1)
Notes
1. Not 100% tested.
2. See Figure 14.1 on page 63 and Table 14.1 on page 63 for test specifications.
Figure 15.1 VCC Power-up Diagram
tVCS
VCC
VCC min
VIH
RESET#
tRH
CE#
64
S29GL-N MirrorBit® Flash Family
S29GL-N_01_12 October 29, 2008
Data
She et
Figure 15.2 Read Operation Timings
tRC
Addresses Stable
Addresses
tACC
CE#
tRH
tRH
tDF
tOE
OE#
tOEH
WE#
tCE
tOH
HIGH Z
HIGH Z
Output Valid
Outputs
RESET#
RY/BY#
0V
Figure 15.3 Page Read Timings
Same Page
A23-A2
A1-A0*
Aa
Ab
tPACC
tACC
Data Bus
Qa
Ad
Ac
tPACC
Qb
tPACC
Qc
Qd
CE#
OE#
Note
* Figure shows device in word mode. Addresses are A1–A-1 for byte mode.
October 29, 2008 S29GL-N_01_12
S29GL-N MirrorBit® Flash Family
65
D at a
S hee t
Table 15.2 Hardware Reset (RESET#)
Parameter
JEDEC
Std.
Description
All Speed Options
Unit
tReady
RESET# Pin Low (During Embedded Algorithms) to Read Mode (See Note)
Max
20
μs
tReady
RESET# Pin Low (NOT During Embedded Algorithms) to Read Mode
(See Note)
Max
500
ns
tRP
RESET# Pulse Width
Min
500
ns
tRH
Reset High Time Before Read (See Note)
Min
50
ns
tRPD
RESET# Input Low to Standby Mode (See Note)
Min
20
µs
tRB
RY/BY# Output High to CE#, OE# pin Low
Min
0
ns
Note
Not 100% tested.
Figure 15.4 Reset Timings
RY/BY#
CE#, OE#
tRH
RESET#
tRP
tReady
Reset Timings NOT during Embedded Algorithms
Reset Timings during Embedded Algorithms
tReady
RY/BY#
tRB
CE#, OE#
tRH
RESET#
tRP
Notes
1. Not 100% tested.
2. See the Erase And Programming Performance on page 73 for more information.
3. For 1–16 words/1–32 bytes programmed.
66
S29GL-N MirrorBit® Flash Family
S29GL-N_01_12 October 29, 2008
Data
She et
Table 15.3 Erase and Program Operations
Parameter
Speed Options
JEDEC
Std.
tAVAV
tWC
Write Cycle Time (Note 1)
Min
tAVWL
tAS
Address Setup Time
Min
0
ns
tASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
ns
tWLAX
Description
90
110
90
110
Unit
ns
tAH
Address Hold Time
Min
45
tAHT
Address Hold Time From CE# or OE# high during toggle bit polling
Min
0
ns
tDVWH
tDS
Data Setup Time
Min
35
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tCEPH
CE# High during toggle bit polling
Min
20
ns
tOEPH
OE# High during toggle bit polling
Min
20
ns
tGHWL
tGHWL
Read Recovery Time Before Write (OE# High to WE# Low)
Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
35
ns
tWHDL
tWPH
Write Pulse Width High
Min
30
ns
Write Buffer Program Operation (Notes 2, 3)
Typ
240
Single Word Program Operation (Note 2)
Typ
60
Accelerated Single Word Program Operation (Note 2)
Typ
54
tWHWH1
tWHWH2
tWHWH1
µs
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.5
sec
tVHH
VHH Rise and Fall Time (Note 1)
Min
250
ns
tVCS
VCC Setup Time (Note 1)
Min
tBUSY
WE# High to RY/BY# Low
Min
50
90
µs
110
ns
Notes
1. Not 100% tested.
2. See the Erase And Programming Performance on page 73 for more information.
3. For 1–16 words/1–32 bytes programmed.
October 29, 2008 S29GL-N_01_12
S29GL-N MirrorBit® Flash Family
67
D at a
S hee t
Figure 15.5 Program Operation Timings
Program Command Sequence (last two cycles)
tAS
tWC
555h
Addresses
Read Status Data (last two cycles)
PA
PA
PA
tAH
CE#
tCH
OE#
tWP
WE#
tWPH
tCS
tDS
tWHWH1
tDH
A0h
Data
PD
Status
DOUT
tBUSY
tRB
RY/BY#
VCC
tVCS
Notes
1. PA = program address, PD = program data, DOUT is the true data at the program address.
2. Illustration shows device in word mode.
Figure 15.6 Accelerated Program Timing Diagram
VHH
HH
ACC
68
VILIL or VIH
IH
VILIL or VIH
IH
tVHH
VHH
tVHH
VHH
S29GL-N MirrorBit® Flash Family
S29GL-N_01_12 October 29, 2008
Data
She et
Figure 15.7 Chip/Sector Erase Operation Timings
Erase Command Sequence (last two cycles)
tAS
tWC
2AAh
Addresses
Read Status Data
VA
SA
VA
555h for chip erase
tAH
CE#
tCH
OE#
tWP
WE#
tWPH
tCS
tWHWH2
tDS
tDH
Data
55h
In
Progress
30h
Complete
10 for Chip Erase
tBUSY
tRB
RY/BY#
tVCS
VCC
Notes
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see Write Operation Status on page 55.)
2. Illustration shows device in word mode.
Figure 15.8 Data# Polling Timings (During Embedded Algorithms)
tRC
Addresses
VA
VA
VA
tACC
tCE
CE#
tCH
tOE
OE#
tOEH
tDF
WE#
tOH
High Z
DQ7
Complement
Complement
DQ0–DQ6
Status Data
Status Data
True
Valid Data
High Z
True
Valid Data
tBUSY
RY/BY#
Note
VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle.
October 29, 2008 S29GL-N_01_12
S29GL-N MirrorBit® Flash Family
69
D at a
S hee t
Figure 15.9 Toggle Bit Timings (During Embedded Algorithms)
tAHT
tAS
Addresses
tAHT
tASO
CE#
tCEPH
tOEH
WE#
tOEPH
OE#
tDH
DQ6 / DQ2
tCE
Valid
Status
Valid
Status
Valid
Status
(first read)
(second read)
(stops toggling)
Valid Data
Valid Data
RY/BY#
Note
VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle, and array
data read cycle.
Figure 15.10 DQ2 vs. DQ6
Enter
Embedded
Erasing
WE#
Erase
Suspend
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase
Suspend
Program
Erase
Resume
Erase Suspend
Read
Erase
Erase
Complete
DQ6
DQ2
Note
DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to toggle DQ2 and DQ6.
70
S29GL-N MirrorBit® Flash Family
S29GL-N_01_12 October 29, 2008
Data
She et
Table 15.4 Alternate CE# Controlled Erase and Program Operations
Parameter
Speed Options
JEDEC
Std.
tAVAV
tWC
Write Cycle Time (Note 1)
Description
Min
90
110
Unit
90
110
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tELAX
tAH
Address Hold Time
Min
45
ns
tDVEH
tDS
Data Setup Time
Min
35
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tGHEL
tGHEL
Read Recovery Time Before Write (OE# High to CE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE# Pulse Width
Min
35
ns
tEHEL
tCPH
CE# Pulse Width High
Min
25
ns
Write Buffer Program Operation (Notes 2, 3)
Typ
240
Single Word Program Operation (Note 2)
Typ
60
Accelerated Single Word Program Operation (Note 2)
Typ
54
tWHWH1
tWHWH2
tWHWH1
µs
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.5
sec
tRH
RESET# High Time Before Write
Min
50
ns
Notes
1. Not 100% tested.
2. See the Erase And Programming Performance on page 73 for more information.
3. For 1–16 words/1–32 bytes programmed.
October 29, 2008 S29GL-N_01_12
S29GL-N MirrorBit® Flash Family
71
D at a
S hee t
Figure 15.11 Alternate CE# Controlled Write (Erase/Program) Operation Timings
PBA for program
2AA for erase
SA for program buffer to flash
SA for sector erase
555 for chip erase
Data# Polling
PA
Addresses
tWC
tAS
tAH
tWH
WE#
tGHEL
OE#
tWHWH1 or 2
tCP
CE#
tWS
tCPH
tBUSY
tDS
tDH
DQ7#
Data
tRH
PBD for program
55 for erase
DOUT
29 for program buffer to flash
30 for sector erase
10 for chip erase
RESET#
RY/BY#
Notes
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. DOUT is the data written to the device.
4. Illustration shows device in word mode.
72
S29GL-N MirrorBit® Flash Family
S29GL-N_01_12 October 29, 2008
Data
She et
16. Erase And Programming Performance
Parameter
Sector Erase Time
Chip Erase Time
Typ (Note 1)
Max
(Note 2)
0.5
3.5
S29GL032N
32
64
S29GL064N
64
128
Total Write Buffer Program Time (Notes 3, 5)
240
Total Accelerated Effective Write Buffer Program Time (Notes 4, 5)
200
Chip Program Time
S29GL032N
31.5
S29GL064N
63
Unit
Comments
sec
Excludes 00h
programming prior
to erasure
(Note 6)
µs
sec
Excludes system
level overhead
(Note 7)
Notes
1. Typical program and erase times assume the following conditions: 25°C, VCC = 3.0V, 10,000 cycles; checkerboard data pattern.
2. Under worst case conditions of 90°C; Worst case VCC, 100,000 cycles.
3. Programming time (typ) is 15 μs (per word), 7.5 μs (per byte).
4. Accelerated programming time (typ) is 12.5 μs (per word), 6.3 μs (per byte).
5. Write buffer Programming time is calculated on a per-word/per-byte basis for a 16-word/32-byte write buffer operation.
6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
7. System-level overhead is the time required to execute the command sequence(s) for the program command. See Table 10.1 on page 51 and Table 10.3
on page 53 for further information on command definitions.
Table 16.1 TSOP Pin and BGA Package Capacitance
Parameter Symbol
Parameter Description
Test Setup
CIN
Input Capacitance
VIN = 0
COUT
Output Capacitance
VOUT = 0
CIN2
Control Pin Capacitance
VIN = 0
CIN3
#RESET, WP#/ACC Pin Capacitance
VIN = 0
Typ
Max
Unit
TSOP
6
10
pF
BGA
TBD
TBD
pF
TSOP
6
12
pF
BGA
TBD
TBD
pF
TSOP
6
10
pF
BGA
TBD
TBD
pF
TSOP
27
30
pF
BGA
TBD
TBD
pF
Notes
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
October 29, 2008 S29GL-N_01_12
S29GL-N MirrorBit® Flash Family
73
D at a
S hee t
17. Physical Dimensions
17.1
TS048—48-Pin Standard Thin Small Outline Package (TSOP)
STANDARD PIN OUT (TOP VIEW)
A2
2
0.10 C
1
N
SEE DETAIL B
-A-
-BE 5
e
9
N
+1
2
N
2
D1
D
5
A1
4
C
SEATING
PLANE
B
A
0.08MM (0.0031") M C A-B S
B
SEE DETAIL A
b
6
7
WITH PLATING
7
(c)
c1
b1
BASE METAL
R
c
e/2
SECTION B-B
GAGE LINE
0.25MM (0.0098") BSC
0˚
-X-
PARALLEL TO
SEATING PLANE
L
X = A OR B
DETAIL A
Package
TS 048
Jedec
MO-142 (B) EC
Symbol
A
A1
A2
b1
b
c1
c
D
D1
E
e
L
0
R
N
74
MIN
NOM
MAX
1.20
0.15
0.05
0.95
1.00
1.05
0.20
0.23
0.17
0.22
0.17
0.27
0.10
0.16
0.10
0.21
19.80 20.00 20.20
18.30 18.40 18.50
11.90 12.00 12.10
0.50 BASIC
0.50
0.70
0.60
3˚
0˚
5˚
0.08
0.20
48
DETAIL B
NOTES:
1
CONTROLLING DIMENSIONS ARE IN MILLIMETERS (MM).
(DIMENSIONING AND TOLERANCING CONFORMS TO ANSI Y14.5M-1982)
2
PIN 1 IDENTIFIER FOR STANDARD PIN OUT (DIE UP).
3
NOT APPLICABLE.
4
TO BE DETERMINED AT THE SEATING PLANE -C- . THE SEATING PLANE IS DEFINED AS THE PLANE OF
CONTACT THAT IS MADE WHEN THE PACKAGE LEADS ARE ALLOWED TO REST FREELY ON A FLAT
HORIZONTAL SURFACE.
5
DIMENSIONS D1 AND E DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE MOLD PROTUSION IS
0.15MM (.0059") PER SIDE.
6
DIMENSION b DOES NOT INCLUDE DAMBAR PROTUSION. ALLOWABLE DAMBAR PROTUSION SHALL BE
0.08 (0.0031") TOTAL IN EXCESS OF b DIMENSION AT MAX. MATERIAL CONDITION. MINIMUM SPACE
BETWEEN PROTRUSION AND AN ADJACENT LEAD TO BE 0.07 (0.0028").
7
THESE DIMENSIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.10MM (.0039") AND
0.25MM (0.0098") FROM THE LEAD TIP.
8
LEAD COPLANARITY SHALL BE WITHIN 0.10MM (0.004") AS MEASURED FROM THE SEATING PLANE.
9
DIMENSION "e" IS MEASURED AT THE CENTERLINE OF THE LEADS.
3325 \ 16-038.10a
S29GL-N MirrorBit® Flash Family
S29GL-N_01_12 October 29, 2008
Data
17.2
She et
TS056—56-Pin Standard Thin Small Outline Package (TSOP)
2X
0.10
STANDARD PIN OUT (TOP VIEW)
2X (N/2 TIPS)
2X
2
0.10
0.10
1
A2
N
SEE DETAIL B
A
REVERSE PIN OUT (TOP VIEW)
3
B
1
N
E 5
N
+1
2
N
2
D1
0.25
9
A1
4
D
2X (N/2 TIPS)
e
5
C
SEATING
PLANE
B
A
B
N
+1
2
N
2
SEE DETAIL A
0.08MM
(0.0031")
b
M
C A-B S
6
7
WITH PLATING
7
(c)
c1
b1
SECTION B-B
BASE METAL
R
(c)
e/2
GAUGE PLANE
θ°
PARALLEL TO
SEATING PLANE
0.25MM (0.0098") BSC
L
X = A OR B
DETAIL A
Package
TS 056
Jedec
MO-142 (D) EC
Symbol
A
A1
A2
b1
b
c1
c
D
D1
E
e
L
0
R
N
MIN
NOM
MAX
1.20
0.15
0.05
0.95
1.00
1.05
0.20
0.23
0.17
0.22
0.17
0.27
0.10
0.16
0.10
0.21
19.80 20.00 20.20
18.30 18.40 18.50
13.90 14.00 14.10
0.50 BASIC
0.50
0.70
0.60
0˚
8˚
0.08
0.20
56
X
C
DETAIL B
NOTES:
1
CONTROLLING DIMENSIONS ARE IN MILLIMETERS (mm).
(DIMENSIONING AND TOLERANCING CONFORMS TO ANSI Y14.5M-1982)
2
PIN 1 IDENTIFIER FOR REVERSE PIN OUT (DIE UP).
3
PIN 1 IDENTIFIER FOR REVERSE PIN OUT (DIE DOWN), INK OR LASER MARK.
4
TO BE DETERMINED AT THE SEATING PLANE -C- . THE SEATING PLANE IS DEFINED AS THE PLANE OF
CONTACT THAT IS MADE WHEN THE PACKAGE LEADS ARE ALLOWED TO REST FREELY ON A FLAT
HORIZONTAL SURFACE.
5
DIMENSIONS D1 AND E DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE MOLD PROTUSION IS
0.15mm (.0059") PER SIDE.
6
DIMENSION b DOES NOT INCLUDE DAMBAR PROTUSION. ALLOWABLE DAMBAR PROTUSION SHALL BE
0.08 (0.0031") TOTAL IN EXCESS OF b DIMENSION AT MAX. MATERIAL CONDITION. MINIMUM SPACE
BETWEEN PROTRUSION AND AN ADJACENT LEAD TO BE 0.07 (0.0028").
7
THESE DIMENSIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.10MM (.0039") AND
0.25MM (0.0098") FROM THE LEAD TIP.
8
LEAD COPLANARITY SHALL BE WITHIN 0.10mm (0.004") AS MEASURED FROM THE SEATING PLANE.
9
DIMENSION "e" IS MEASURED AT THE CENTERLINE OF THE LEADS.
October 29, 2008 S29GL-N_01_12
3356 \ 16-038.10c
S29GL-N MirrorBit® Flash Family
75
D at a
17.3
S hee t
VBK048—Ball Fine-pitch Ball Grid Array (BGA) 8.15x 6.15 mm Package
0.10
D
(4X)
D1
A
6
5
7
e
4
E
SE
E1
3
2
1
H
PIN A1
CORNER
INDEX MARK
6
B
10
G
F
φb
E
D
C
SD
B
A
A1 CORNER
7
φ 0.08 M C
TOP VIEW
φ 0.15 M C A B
BOTTOM VIEW
0.10 C
A2
A
SEATING PLANE
A1
C
0.08 C
SIDE VIEW
NOTES:
PACKAGE
VBK 048
JEDEC
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
N/A
2. ALL DIMENSIONS ARE IN MILLIMETERS.
8.15 mm x 6.15 mm NOM
PACKAGE
SYMBOL
MIN
NOM
MAX
A
---
---
1.00
A1
0.18
---
---
A2
0.62
---
0.76
3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEPT
AS NOTED).
NOTE
OVERALL THICKNESS
BALL HEIGHT
8.15 BSC.
BODY SIZE
E
6.15 BSC.
BODY SIZE
5.60 BSC.
BALL FOOTPRINT
E1
4.00 BSC.
BALL FOOTPRINT
MD
8
ROW MATRIX SIZE D DIRECTION
ME
6
ROW MATRIX SIZE E DIRECTION
N
48
TOTAL BALL COUNT
---
0.43
BALL DIAMETER
e
0.80 BSC.
BALL PITCH
SD / SE
0.40 BSC.
SOLDER BALL PLACEMENT
---
SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE
"E" DIRECTION.
N IS THE TOTAL NUMBER OF SOLDER BALLS.
D1
0.35
e REPRESENTS THE SOLDER BALL GRID PITCH.
5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE
"D" DIRECTION.
BODY THICKNESS
D
φb
4.
DEPOPULATED SOLDER BALLS
6
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7
SD AND SE ARE MEASURED WITH RESPECT TO DATUMS
A AND B AND DEFINE THE POSITION OF THE CENTER
SOLDER BALL IN THE OUTER ROW.
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN
THE OUTER ROW PARALLEL TO THE D OR E DIMENSION,
RESPECTIVELY, SD OR SE = 0.000.
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN
THE OUTER ROW, SD OR SE = e/2
8. NOT USED.
9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED
BALLS.
10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK
MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.
3338 \ 16-038.25 \ 10.05.04
76
S29GL-N MirrorBit® Flash Family
S29GL-N_01_12 October 29, 2008
Data
17.4
She et
LAA064—64-Ball Fortified Ball Grid Array (BGA) 13 x 11 mm Package
NOTES:
PACKAGE
LAA 064
JEDEC
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
N/A
2. ALL DIMENSIONS ARE IN MILLIMETERS.
13.00 mm x 11.00 mm
PACKAGE
3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEPT
AS NOTED).
SYMBOL
MIN
NOM
MAX
A
---
---
1.40
NOTE
A1
0.40
---
---
STANDOFF
A2
0.60
---
---
BODY THICKNESS
PROFILE HEIGHT
D
13.00 BSC.
BODY SIZE
E
11.00 BSC.
BODY SIZE
D1
7.00 BSC.
MATRIX FOOTPRINT
E1
7.00 BSC.
MATRIX FOOTPRINT
MD
8
MATRIX SIZE D DIRECTION
ME
8
MATRIX SIZE E DIRECTION
N
64
BALL COUNT
φb
0.50
0.60
0.70
BALL DIAMETER
eD
1.00 BSC.
BALL PITCH - D DIRECTION
eE
1.00 BSC.
BALL PITCH - E DIRECTION
SD / SE
0.50 BSC.
SOLDER BALL PLACEMENT
NONE
DEPOPULATED SOLDER BALLS
4.
e REPRESENTS THE SOLDER BALL GRID PITCH.
5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE
"D" DIRECTION.
SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE
"E" DIRECTION.
N IS THE TOTAL NUMBER OF SOLDER BALLS.
6
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7
SD AND SE ARE MEASURED WITH RESPECT TO DATUMS
A AND B AND DEFINE THE POSITION OF THE CENTER
SOLDER BALL IN THE OUTER ROW.
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN
THE OUTER ROW PARALLEL TO THE D OR E DIMENSION,
RESPECTIVELY, SD OR SE = 0.000.
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN
THE OUTER ROW, SD OR SE = e/2
8. NOT USED.
9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED
BALLS.
3354 \ 16-038.12d
October 29, 2008 S29GL-N_01_12
S29GL-N MirrorBit® Flash Family
77
D at a
17.5
S hee t
LAE064-64-Ball Fortified Ball Grid Array (BGA) 9 x 9 mm Package
NOTES:
PACKAGE
LAE 064
JEDEC
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
N/A
2. ALL DIMENSIONS ARE IN MILLIMETERS.
9.00 mm x 9.00 mm
PACKAGE
3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010
EXCEPT AS NOTED).
SYMBOL
MIN
NOM
MAX
NOTE
A
---
---
1.40
A1
0.40
---
---
STANDOFF
A2
0.60
---
---
BODY THICKNESS
PROFILE HEIGHT
D
9.00 BSC.
BODY SIZE
E
9.00 BSC.
BODY SIZE
D1
7.00 BSC.
MATRIX FOOTPRINT
E1
7.00 BSC.
MATRIX FOOTPRINT
MD
8
MATRIX SIZE D DIRECTION
ME
8
MATRIX SIZE E DIRECTION
N
64
φb
0.50
0.60
BALL COUNT
0.70
BALL DIAMETER
eD
1.00 BSC.
BALL PITCH - D DIRECTION
eE
1.00 BSC.
BALL PITCH - E DIRECTION
SD / SE
0.50 BSC.
SOLDER BALL PLACEMENT
NONE
DEPOPULATED SOLDER BALLS
4.
e REPRESENTS THE SOLDER BALL GRID PITCH.
5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE
"D" DIRECTION.
SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE
"E" DIRECTION.
N IS THE TOTAL NUMBER OF SOLDER BALLS.
6
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7
SD AND SE ARE MEASURED WITH RESPECT TO DATUMS
A AND B AND DEFINE THE POSITION OF THE CENTER
SOLDER BALL IN THE OUTER ROW.
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN
THE OUTER ROW PARALLEL TO THE D OR E DIMENSION,
RESPECTIVELY, SD OR SE = 0.000.
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN
THE OUTER ROW, SD OR SE = e/2
8. NOT USED.
9. "+" INDICATES THE THEORETICAL CENTER OF
DEPOPULATED BALLS.
3623 \ 16-038.12 \ 1.16.07
78
S29GL-N MirrorBit® Flash Family
S29GL-N_01_12 October 29, 2008
Data
She et
18. Revision History
Section
Description
Revision 01 (February 12, 2007)
Initial release.
Revision 02 (February 26, 2007)
Global
Replaced LAE064 package with LAA064.
Page Mode Read
Corrected bit ranges in first paragraph.
Erase And Programming Performance
Modified maximum sector erase time in table.
Revision 03 (March 15, 2007)
Connection Diagrams
64-ball Fortified BGA (LAA 064) figure: Changed inputs for balls F1 and F7.
Revision 04 (July 6, 2007)
Ordering Information
Removed regulated VCC range and replaced 90 ns with 110 ns for low VIO option
Added Note 4 to PACKAGE MATERIAL SET Standard option
Sector Addresses table
Corrected a table
TSOP Pin and BGA Package
Capacitance
Added values for TSOP
Revision 05 (August 10, 2007)
Ordering Information
Removed leaded parts
CFI Table
Altered Erase Block Region 1 & 2
Revision 06 (September 18, 2007)
Global
Change document status to Full Production
Removed 70ns access speed
Command Definitions (x16 mode) Table Corrected addresses for Program operation
Command Definitions (x8 mode) Table
Corrected addresses for Program operation
Revision 07 (October 22, 2007)
Global
Removed VID (12V) Sector protect & unprotect features
Primary Vendor-Specific Extended
Query Table
Updated the data of CFI address 45hex
Revision 08 (November 2, 2007)
Primary Vendor-Specific Extended
Query Table
Updated the data of CFI address 2D hex thru 34 hex.
S29GL064N (Model 04) Bottom Boot
Sector Addresses Table
Updated S29GL064N (Model 04) Bottom Boot Sector Addresses
Revision 09 (November 16, 2007)
Erase and Program Operations Table
Changed tDS from 45 ns to 35 ns
Revision 10 (April 10, 2008)
Absolute Maximum Rating
Removed OE# form table and notes
Alternate CE# Controlled Erase and
Program Operations
Changed tDS from 45 ns to 35 ns
Requirements for Reading Array Data
Entire section is re-written to explain requirements for reading array data
Changed tCPH from 30 ns to 25 ns
Sector Protection
Title changed to Advanced Sector Protection
Advanced Sector Protection
Section removed
Erase and Program Operations
Removed note 4
Alternate CE# Controlled Erase and
Program Operations
Removed note 4
Global
Corrected minor typos
AC Characteristics
Updated Data#Polling Timing
October 29, 2008 S29GL-N_01_12
S29GL-N MirrorBit® Flash Family
79
D at a
Section
S hee t
Description
Revision 11 (August 5, 2008)
DC Characteristics
Changed Note 1 in Table DC Characteristics- CMOS Compatible
Ordering Information
Added LAE064 package option
Connection Diagram
Figure 3.3; Title changed to 64ball Fortified BGA
Physical Dimensions
Added LAE064 package option
Revision 12 (October 29, 2008)
Ordering Information
80
Updated Valid Combinations Table
S29GL-N MirrorBit® Flash Family
S29GL-N_01_12 October 29, 2008
Data
She et
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without
limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as
contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the
public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility,
aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for
any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion will not be liable to
you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor
devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design
measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal
operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under
the Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country,
the prior authorization by the respective government entity will be required for export of those products.
Trademarks and Notice
The contents of this document are subject to change without notice. This document may contain information on a Spansion product under
development by Spansion. Spansion reserves the right to change or discontinue work on any product without notice. The information in this
document is provided as is without warranty or guarantee of any kind as to its accuracy, completeness, operability, fitness for particular purpose,
merchantability, non-infringement of third-party rights, or any other warranty, express, implied, or statutory. Spansion assumes no liability for any
damages of any kind arising out of the use of the information in this document.
Copyright © 2007-2008 Spansion Inc. All rights reserved. Spansion®, the Spansion Logo, MirrorBit®, MirrorBit® Eclipse™, ORNAND™,
ORNAND2™, HD-SIM™, EcoRAM™ and combinations thereof, are trademarks of Spansion LLC in the US and other countries. Other names
used are for informational purposes only and may be trademarks of their respective owners.
October 29, 2008 S29GL-N_01_12
S29GL-N MirrorBit® Flash Family
81
Was this manual useful for you? yes no
Thank you for your participation!

* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project

Download PDF

advertisement