MOSFET DataSheet OptiMOS

MOSFET DataSheet OptiMOS
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTMPower-Transistor,60V
IPA029N06N
DataSheet
Rev.2.2
Final
PowerManagement&Multimarket
OptiMOSTMPower-Transistor,60V
IPA029N06N
1Description
TO-220-FP
Features
•OptimizedforhighperformanceSMPS,e.g.sync.rec.
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
60
V
RDS(on),max
2.9
mΩ
ID
84
A
QOSS
65
nC
QG(0V..10V)
56
nC
Drain
Pin 2
Gate
Pin 1
Source
Pin 3
Type/OrderingCode
Package
Marking
RelatedLinks
IPA029N06N
PG-TO220-FP
029N06N
-
1)
J-STD20 and JESD22
Final Data Sheet
2
Rev.2.2,2015-04-09
OptiMOSTMPower-Transistor,60V
IPA029N06N
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
3
Rev.2.2,2015-04-09
OptiMOSTMPower-Transistor,60V
IPA029N06N
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current
Values
Unit
Note/TestCondition
84
59
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
-
336
A
TC=25°C
-
-
140
mJ
ID=84A,RGS=25Ω
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
38
W
TC=25°C
Operating and storage temperature
Tj,Tstg
-55
-
175
°C
IEC climatic category;
DIN IEC 68-1: 55/175/56
Unit
Note/TestCondition
K/W
-
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
ID,pulse
-
Avalanche energy, single pulse
EAS
Gate source voltage
Pulsed drain current1)
2)
3Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case
RthJC
Values
Min.
Typ.
Max.
-
2.9
3.9
4Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Min.
Typ.
Max.
V(BR)DSS
60
-
-
V
VGS=0V,ID=1mA
Gate threshold voltage
VGS(th)
2.1
2.8
3.3
V
VDS=VGS,ID=75µA
Zero gate voltage drain current
IDSS
-
0.1
10
1
100
µA
VDS=60V,VGS=0V,Tj=25°C
VDS=60V,VGS=0V,Tj=125°C
Gate-source leakage current
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
2.6
3.0
2.9
3.5
mΩ
VGS=10V,ID=84A
VGS=6V,ID=21A
Gate resistance3)
RG
0.65
1.3
1.95
Ω
-
Transconductance
gfs
75
150
-
S
|VDS|>2|ID|RDS(on)max,ID=84A
1)
See figure 3 for more detailed information
See figure 13 for more detailed information
3)
Defined by design. Not subject to production test
2)
Final Data Sheet
4
Rev.2.2,2015-04-09
OptiMOSTMPower-Transistor,60V
IPA029N06N
Table5Dynamiccharacteristics1)
Parameter
Symbol
Input capacitance
Values
Unit
Note/TestCondition
5125
pF
VGS=0V,VDS=30V,f=1MHz
980
1225
pF
VGS=0V,VDS=30V,f=1MHz
-
39
78
pF
VGS=0V,VDS=30V,f=1MHz
td(on)
-
16
-
ns
VDD=30V,VGS=10V,ID=84A,
RG,ext=3Ω
Rise time
tr
-
15
-
ns
VDD=30V,VGS=10V,ID=84A,
RG,ext=3Ω
Turn-off delay time
td(off)
-
30
-
ns
VDD=30V,VGS=10V,ID=84A,
RG,ext=3Ω
Fall time
tf
-
11
-
ns
VDD=30V,VGS=10V,ID=84A,
RG,ext=3Ω
Unit
Note/TestCondition
Min.
Typ.
Max.
Ciss
-
4100
Output capacitance
Coss
-
Reverse transfer capacitance
Crss
Turn-on delay time
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge
Gate charge at threshold
Values
Min.
Typ.
Max.
Qgs
-
19
-
nC
VDD=30V,ID=84A,VGS=0to10V
Qg(th)
-
11
-
nC
VDD=30V,ID=84A,VGS=0to10V
Gate to drain charge
Qgd
-
10
15
nC
VDD=30V,ID=84A,VGS=0to10V
Switching charge
Qsw
-
18
-
nC
VDD=30V,ID=84A,VGS=0to10V
Gate charge total
Qg
-
56
66
nC
VDD=30V,ID=84A,VGS=0to10V
Gate plateau voltage
Vplateau
-
4.7
-
V
VDD=30V,ID=84A,VGS=0to10V
Gate charge total, sync. FET
Qg(sync)
-
49
-
nC
VDS=0.1V,VGS=0to10V
Qoss
-
65
82
nC
VDD=30V,VGS=0V
Unit
Note/TestCondition
1)
1)
Output charge
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Diode pulse current
Diode forward voltage
1)
Reverse recovery time
1)
Reverse recovery charge
1)
2)
Values
Min.
Typ.
Max.
IS
-
-
32
A
TC=25°C
IS,pulse
-
-
336
A
TC=25°C
VSD
-
0.85
1.2
V
VGS=0V,IF=32A,Tj=25°C
trr
-
36
58
ns
VR=30V,IF=32A,diF/dt=100A/µs
Qrr
-
31
-
nC
VR=30V,IF=32A,diF/dt=100A/µs
Defined by design. Not subject to production test
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
5
Rev.2.2,2015-04-09
OptiMOSTMPower-Transistor,60V
IPA029N06N
5Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
100
40
80
30
60
ID[A]
Ptot[W]
50
20
40
10
20
0
0
25
50
75
100
125
150
175
0
200
0
25
50
75
TC[°C]
100
125
150
175
200
TC[°C]
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
101
10
1 µs
10 µs
102
0.5
100
ZthJC[K/W]
ID[A]
100 µs
1 ms
101
10 ms
0.1
0.05
0.02
10-1
DC
0.2
0.01
100
10-1
10-1
single pulse
100
101
102
10-2
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
6
Rev.2.2,2015-04-09
OptiMOSTMPower-Transistor,60V
IPA029N06N
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
320
8
10 V
7V
6V
280
7
240
6
200
5
5.5 V
RDS(on)[mΩ]
ID[A]
5V
160
120
5.5 V
4
6V
7V
3
5V
10 V
80
2
40
1
0
0.0
0.5
1.0
1.5
0
2.0
0
40
80
120
VDS[V]
160
200
240
280
320
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
280
160
240
120
200
ID[A]
gfs[S]
160
120
80
40
175 °C
40
0
80
25 °C
0
2
4
6
8
0
0
VGS[V]
40
60
80
100
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
20
gfs=f(ID);Tj=25°C
7
Rev.2.2,2015-04-09
OptiMOSTMPower-Transistor,60V
IPA029N06N
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
6
5
5
4
4
3
3
VGS(th)[V]
RDS(on)[mΩ]
max
typ
750 µA
75 µA
2
2
1
1
0
-60
-20
20
60
100
140
0
-60
180
-20
20
Tj[°C]
60
100
140
180
Tj[°C]
RDS(on)=f(Tj);ID=84A;VGS=10V
VGS(th)=f(Tj);VGS=VDS
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
103
10
25 °C
175 °C
Ciss
103
102
IF[A]
C[pF]
Coss
102
101
Crss
101
0
20
40
60
100
0.0
VDS[V]
1.0
1.5
VSD[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
0.5
IF=f(VSD);parameter:Tj
8
Rev.2.2,2015-04-09
OptiMOSTMPower-Transistor,60V
IPA029N06N
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
102
12
30 V
10
12 V
25 °C
48 V
100 °C
8
VGS[V]
IAV[A]
150 °C
101
6
4
2
100
100
101
102
103
0
0
10
tAV[µs]
20
30
40
50
60
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=84Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Gate charge waveforms
70
66
VBR(DSS)[V]
62
58
54
50
-60
-20
20
60
100
140
180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
9
Rev.2.2,2015-04-09
OptiMOSTMPower-Transistor,60V
IPA029N06N
6PackageOutlines
Figure1OutlinePG-TO220-FP,dimensionsinmm/inches
Final Data Sheet
10
Rev.2.2,2015-04-09
OptiMOSTMPower-Transistor,60V
IPA029N06N
RevisionHistory
IPA029N06N
Revision:2015-04-09,Rev.2.2
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.1
2014-06-19
Release of Final Version
2.2
2015-04-09
Rev.2.1
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InfineonTechnologiesAG
81726München,Germany
©2015InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
11
Rev.2.2,2015-04-09
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