MOSFET DataSheet OptiMOS PowerManagement&Multimarket

MOSFET DataSheet OptiMOS PowerManagement&Multimarket
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTMPower-Transistor,60V
IPA060N06N
DataSheet
Rev.2.1
Final
PowerManagement&Multimarket
OptiMOSTMPower-Transistor,60V
IPA060N06N
1Description
TO-220-FP
Features
•OptimizedforhighperformanceSMPS,e.g.sync.rec.
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
60
V
RDS(on),max
6.0
mΩ
ID
45
A
QOSS
32
nC
QG(0V..10V)
27
nC
Drain
Pin 2
Gate
Pin 1
Source
Pin 3
Type/OrderingCode
Package
Marking
RelatedLinks
IPA060N06N
PG-TO220-FP
060N06N
-
1)
J-STD20 and JESD22
Final Data Sheet
2
Rev.2.1,2014-06-19
OptiMOSTMPower-Transistor,60V
IPA060N06N
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
3
Rev.2.1,2014-06-19
OptiMOSTMPower-Transistor,60V
IPA060N06N
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current
Values
Unit
Note/TestCondition
45
38
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
-
180
A
TC=25°C
-
-
60
mJ
ID=45A,RGS=25Ω
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
33
W
TC=25°C
Operating and storage temperature
Tj,Tstg
-55
-
175
°C
IEC climatic category;
DIN IEC 68-1: 55/175/56
Unit
Note/TestCondition
K/W
-
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
ID,pulse
-
Avalanche energy, single pulse
EAS
Gate source voltage
Pulsed drain current1)
2)
3Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case
RthJC
Values
Min.
Typ.
Max.
-
3.4
4.6
4Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Min.
Typ.
Max.
V(BR)DSS
60
-
-
V
VGS=0V,ID=1mA
Gate threshold voltage
VGS(th)
2.1
2.8
3.3
V
VDS=VGS,ID=36µA
Zero gate voltage drain current
IDSS
-
0.1
10
1
100
µA
VDS=60V,VGS=0V,Tj=25°C
VDS=60V,VGS=0V,Tj=125°C
Gate-source leakage current
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
5.2
6.7
6.0
7.5
mΩ
VGS=10V,ID=45A
VGS=6V,ID=12A
Gate resistance3)
RG
-
1.6
2.4
Ω
-
Transconductance
gfs
36
73
-
S
|VDS|>2|ID|RDS(on)max,ID=45A
1)
See figure 3 for more detailed information
See figure 13 for more detailed information
3)
Defined by design. Not subject to production test
2)
Final Data Sheet
4
Rev.2.1,2014-06-19
OptiMOSTMPower-Transistor,60V
IPA060N06N
Table5Dynamiccharacteristics1)
Parameter
Symbol
Input capacitance
Values
Unit
Note/TestCondition
2500
pF
VGS=0V,VDS=30V,f=1MHz
490
613
pF
VGS=0V,VDS=30V,f=1MHz
-
22
44
pF
VGS=0V,VDS=30V,f=1MHz
td(on)
-
12
-
ns
VDD=30V,VGS=10V,ID=45A,
RG,ext,ext=3Ω
Rise time
tr
-
12
-
ns
VDD=30V,VGS=10V,ID=45A,
RG,ext,ext=3Ω
Turn-off delay time
td(off)
-
20
-
ns
VDD=30V,VGS=10V,ID=45A,
RG,ext,ext=3Ω
Fall time
tf
-
7
-
ns
VDD=30V,VGS=10V,ID=45A,
RG,ext,ext=3Ω
Unit
Note/TestCondition
Min.
Typ.
Max.
Ciss
-
2000
Output capacitance
Coss
-
Reverse transfer capacitance
Crss
Turn-on delay time
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge
Gate charge at threshold
Values
Min.
Typ.
Max.
Qgs
-
9
-
nC
VDD=30V,ID=45A,VGS=0to10V
Qg(th)
-
5
-
nC
VDD=30V,ID=45A,VGS=0to10V
Gate to drain charge
Qgd
-
5
7
nC
VDD=30V,ID=45A,VGS=0to10V
Switching charge
Qsw
-
9
-
nC
VDD=30V,ID=45A,VGS=0to10V
Gate charge total
Qg
-
27
32
nC
VDD=30V,ID=45A,VGS=0to10V
Gate plateau voltage
Vplateau
-
4.8
-
V
VDD=30V,ID=45A,VGS=0to10V
Gate charge total, sync. FET
Qg(sync)
-
24
-
nC
VDS=0.1V,VGS=0to10V
Qoss
-
32
40
nC
VDD=30V,VGS=0V
Unit
Note/TestCondition
1)
1)
Output charge
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Diode pulse current
Diode forward voltage
1)
Reverse recovery time
1)
Reverse recovery charge
1)
2)
Values
Min.
Typ.
Max.
IS
-
-
27
A
TC=25°C
IS,pulse
-
-
180
A
TC=25°C
VSD
-
0.91
1.2
V
VGS=0V,IF=27A,Tj=25°C
trr
-
32
51
ns
VR=30V,IF=27A,diF/dt=100A/µs
Qrr
-
28
-
nC
VR=30V,IF=27A,diF/dt=100A/µs
Defined by design. Not subject to production test
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
5
Rev.2.1,2014-06-19
OptiMOSTMPower-Transistor,60V
IPA060N06N
5Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
40
50
40
30
ID[A]
Ptot[W]
30
20
20
10
10
0
0
25
50
75
100
125
150
175
0
200
0
25
50
75
TC[°C]
100
125
150
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
200
101
10
0.5
1 µs
102
10 µs
100
1
10
1 ms
10 ms
0.2
0.1
ZthJC[K/W]
100 µs
ID[A]
175
TC[°C]
0.05
0.02
10-1
0.01
single pulse
DC
100
10-1
10-1
100
101
102
10-2
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
6
Rev.2.1,2014-06-19
OptiMOSTMPower-Transistor,60V
IPA060N06N
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
180
16
10 V
7V
160
14
6V
140
12
5V
5.5 V
120
6V
100
RDS(on)[mΩ]
ID[A]
10
5.5 V
80
8
7V
6
60
10 V
5V
4
40
2
20
0
0.0
0.5
1.0
1.5
0
2.0
0
20
40
60
80
VDS[V]
100
120
140
160
180
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
180
120
160
100
140
80
100
gfs[S]
ID[A]
120
80
60
60
40
40
20
175 °C
20
0
25 °C
0
2
4
6
8
0
0
VGS[V]
40
60
80
100
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
20
gfs=f(ID);Tj=25°C
7
Rev.2.1,2014-06-19
OptiMOSTMPower-Transistor,60V
IPA060N06N
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
12
5
11
10
4
9
8
max
3
6
VGS(th)[V]
RDS(on)[mΩ]
7
typ
5
360 µA
36 µA
2
4
3
1
2
1
0
-60
-20
20
60
100
140
0
-60
180
-20
20
Tj[°C]
60
100
140
180
Tj[°C]
RDS(on)=f(Tj);ID=45A;VGS=10V
VGS(th)=f(Tj);VGS=VDS
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
103
10
25 °C
175 °C
Ciss
3
102
IF[A]
C[pF]
10
Coss
102
101
Crss
101
0
20
40
60
100
0.0
0.5
VDS[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
1.0
1.5
2.0
VSD[V]
IF=f(VSD);parameter:Tj
8
Rev.2.1,2014-06-19
OptiMOSTMPower-Transistor,60V
IPA060N06N
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
102
12
30 V
10
12 V
48 V
8
101
VGS[V]
IAV[A]
25 °C
100 °C
150 °C
6
4
2
100
100
101
102
103
0
0
tAV[µs]
10
20
30
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=45Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Gate charge waveforms
70
66
VBR(DSS)[V]
62
58
54
50
-60
-20
20
60
100
140
180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
9
Rev.2.1,2014-06-19
OptiMOSTMPower-Transistor,60V
IPA060N06N
6PackageOutlines
Figure1OutlinePG-TO220-FP,dimensionsinmm/inches
Final Data Sheet
10
Rev.2.1,2014-06-19
OptiMOSTMPower-Transistor,60V
IPA060N06N
RevisionHistory
IPA060N06N
Revision:2014-06-19,Rev.2.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.1
2014-06-19
Rev.2.1
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Publishedby
InfineonTechnologiesAG
81726München,Germany
©2014InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
11
Rev.2.1,2014-06-19
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