MOSFET IPB010N06N OptiMOS Power-Transistor,60V

MOSFET IPB010N06N OptiMOS Power-Transistor,60V
IPB010N06N
MOSFET
OptiMOSTMPower-Transistor,60V
D²-PAK7pin
Features
•Optimizedforsynchronousrectification
•100%avalanchetested
•Superiorthermalresistance
•N-channel,normallevel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
tab
1
7
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
60
V
RDS(on),max
1.0
mΩ
ID
180
A
Qoss
228
nC
QG(0V..10V)
208
nC
Drain
Pin 4, tab
Gate
Pin 1
Source
Pin 2,3,5,6,7
Type/OrderingCode
Package
Marking
RelatedLinks
IPB010N06N
PG-TO263-7
010N06N
-
1)
J-STD20 and JESD22
Final Data Sheet
1
Rev.2.4,2016-01-18
OptiMOSTMPower-Transistor,60V
IPB010N06N
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.2.4,2016-01-18
OptiMOSTMPower-Transistor,60V
IPB010N06N
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current
Values
Unit
Note/TestCondition
180
180
45
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=10V,TC=25°C,RthJA=40K/W1)
-
720
A
TC=25°C
-
-
1600
mJ
ID=100A,RGS=25Ω
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
300
W
TC=25°C
Operating and storage temperature
Tj,Tstg
-55
-
175
°C
IEC climatic category;
DIN IEC 68-1: 55/175/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
Pulsed drain current2)
ID,pulse
-
Avalanche energy, single pulse3)
EAS
Gate source voltage
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case
Values
Min.
Typ.
Max.
RthJC
-
0.3
0.5
K/W
-
Device on PCB,
minimal footprint
RthJA
-
-
62
K/W
-
Device on PCB,
6 cm² cooling area1)
RthJA
-
-
40
K/W
-
Soldering temperature, wave and
reflow soldering are allowed
Tsold
-
-
260
°C
Reflow MSL1
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
Final Data Sheet
3
Rev.2.4,2016-01-18
OptiMOSTMPower-Transistor,60V
IPB010N06N
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
2.8
3.3
V
VDS=VGS,ID=280µA
-
0.5
10
1
100
µA
VDS=60V,VGS=0V,Tj=25°C
VDS=60V,VGS=0V,Tj=125°C
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
0.8
1.0
1.0
1.5
mΩ
VGS=10V,ID=100A
VGS=6V,ID=25A
Gate resistance1)
RG
-
1.8
2.7
Ω
-
Transconductance
gfs
160
310
-
S
|VDS|>2|ID|RDS(on)max,ID=100A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
60
-
Gate threshold voltage
VGS(th)
2.1
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics1)
Parameter
Symbol
Input capacitance
Values
Min.
Typ.
Max.
Ciss
-
15000 18750 pF
VGS=0V,VDS=30V,f=1MHz
Output capacitance
Coss
-
3400
4250
pF
VGS=0V,VDS=30V,f=1MHz
Reverse transfer capacitance
Crss
-
130
260
pF
VGS=0V,VDS=30V,f=1MHz
Turn-on delay time
td(on)
-
37
-
ns
VDD=30V,VGS=10V,ID=100A,
RG,ext=3Ω
Rise time
tr
-
36
-
ns
VDD=30V,VGS=10V,ID=100A,
RG,ext=3Ω
Turn-off delay time
td(off)
-
74
-
ns
VDD=30V,VGS=10V,ID=100A,
RG,ext=3Ω
Fall time
tf
-
23
-
ns
VDD=30V,VGS=10V,ID=100A,
RG,ext=3Ω
Unit
Note/TestCondition
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge
Gate charge at threshold
Values
Min.
Typ.
Max.
Qgs
-
65
-
nC
VDD=30V,ID=100A,VGS=0to10V
Qg(th)
-
46
-
nC
VDD=30V,ID=100A,VGS=0to10V
Gate to drain charge
Qgd
-
37
49
nC
VDD=30V,ID=100A,VGS=0to10V
Switching charge
Qsw
-
56
-
nC
VDD=30V,ID=100A,VGS=0to10V
Gate charge total
Qg
-
208
243
nC
VDD=30V,ID=100A,VGS=0to10V
Gate plateau voltage
Vplateau
-
4.2
-
V
VDD=30V,ID=100A,VGS=0to10V
Gate charge total, sync. FET
Qg(sync)
-
184
-
nC
VDS=0.1V,VGS=0to10V
Qoss
-
228
285
nC
VDD=30V,VGS=0V
1)
1)
1)
Output charge
1)
2)
Defined by design. Not subject to production test
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.2.4,2016-01-18
OptiMOSTMPower-Transistor,60V
IPB010N06N
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Diode pulse current
Values
Unit
Note/TestCondition
180
A
TC=25°C
-
720
A
TC=25°C
-
0.9
1.2
V
VGS=0V,IF=100A,Tj=25°C
trr
-
87
139
ns
VR=30V,IF=100A,diF/dt=100A/µs
Qrr
-
144
-
nC
VR=30V,IF=100A,diF/dt=100A/µs
Min.
Typ.
Max.
IS
-
-
IS,pulse
-
VSD
Reverse recovery time
Reverse recovery charge
Diode forward voltage
1)
1)
Defined by design. Not subject to production test
Final Data Sheet
5
Rev.2.4,2016-01-18
OptiMOSTMPower-Transistor,60V
IPB010N06N
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
320
200
280
160
240
120
ID[A]
Ptot[W]
200
160
80
120
80
40
40
0
0
25
50
75
100
125
150
0
175
0
25
50
75
TC[°C]
100
125
150
175
200
TC[°C]
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
10
100
1 µs
10 µs
0.5
100 µs
102
0.1
ZthJC[K/W]
ID[A]
10 ms
101
0.2
10-1
1 ms
DC
0.05
0.02
10
-2
0.01
100
single pulse
10-1
10-1
100
101
102
10-3
10-6
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
6
Rev.2.4,2016-01-18
OptiMOSTMPower-Transistor,60V
IPB010N06N
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
700
3.0
10 V
7V
5.5 V
6V
600
2.5
5V
500
2.0
RDS(on)[mΩ]
ID[A]
400
5V
300
1.5
5.5 V
6V
1.0
7V
200
10 V
0.5
100
0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
3.0
0
100
200
VDS[V]
300
400
500
600
700
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
700
400
350
600
300
500
250
ID[A]
gfs[S]
400
200
300
150
200
100
100
0
175 °C
0
2
50
25 °C
4
6
8
0
0
30
VGS[V]
90
120
150
180
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
60
gfs=f(ID);Tj=25°C
7
Rev.2.4,2016-01-18
OptiMOSTMPower-Transistor,60V
IPB010N06N
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
2.5
4
2.0
2800 µA
1.5
280 µA
VGS(th)[V]
RDS(on)[mΩ]
3
max
1.0
2
typ
1
0.5
0.0
-60
-20
20
60
100
140
0
-60
180
-20
20
Tj[°C]
60
100
140
180
Tj[°C]
RDS(on)=f(Tj);ID=100A;VGS=10V
VGS(th)=f(Tj);VGS=VDS
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
5
103
10
25 °C
175 °C
Ciss
104
102
IF[A]
C[pF]
Coss
103
101
102
Crss
101
0
20
40
60
100
0.0
VDS[V]
1.0
1.5
VSD[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
0.5
IF=f(VSD);parameter:Tj
8
Rev.2.4,2016-01-18
OptiMOSTMPower-Transistor,60V
IPB010N06N
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
3
10
12
30 V
10
12 V
125 °C
100 °C
48 V
25 °C
8
IAV[A]
VGS[V]
102
101
6
4
2
100
100
101
102
103
0
0
50
tAV[µs]
100
150
200
250
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=100Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Gate charge waveforms
68
66
64
VBR(DSS)[V]
62
60
58
56
54
52
-60
-20
20
60
100
140
180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
9
Rev.2.4,2016-01-18
OptiMOSTMPower-Transistor,60V
IPB010N06N
5PackageOutlines
Figure1OutlinePG-TO263-7,dimensionsinmm/inches
Final Data Sheet
10
Rev.2.4,2016-01-18
OptiMOSTMPower-Transistor,60V
IPB010N06N
RevisionHistory
IPB010N06N
Revision:2016-01-18,Rev.2.4
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.3
2014-10-03
Rev. 2.3
2.4
2016-01-18
Update package outline
TrademarksofInfineonTechnologiesAG
AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,
EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,
ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,
PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,
SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.
TrademarksupdatedAugust2015
OtherTrademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.
WeListentoYourComments
Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously
improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to:
[email protected]
Publishedby
InfineonTechnologiesAG
81726München,Germany
©2015InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
11
Rev.2.4,2016-01-18
Was this manual useful for you? yes no
Thank you for your participation!

* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project

Download PDF

advertisement