BSS 83 P SIPMOS Small-Signal-Transistor 

BSS 83 P SIPMOS Small-Signal-Transistor 
BSS 83 P
SIPMOS  Small-Signal-Transistor
Features
Product Summary
· P-Channel
Drain source voltage
VDS
·
Drain-source on-state resistance
RDS(on)
Continuous drain current
ID
Enhancement mode
· Avalanche rated
· Logic Level
-60
V
2
W
-0.33
A
3
· dv/dt rated
2
• Qualified according to AEC Q101
1
• Halogen-free according to IEC61249-2-21
Type
Package
Tape and Reel
BSS 83 P
PG-SOT-23
H6327: 3000pcs/r. YAs
Marking
Maximum Ratings,at T j = 25 °C, unless otherwise specified
Parameter
Symbol
Pin 1
PIN 2
PIN 3
G
S
D
Value
ID
Continuous drain current
-0.33
T A = 70 °C
-0.27
I D puls
Unit
A
T A = 25 °C
Pulsed drain current
VPS05161
-1.32
T A = 25 °C
Avalanche energy, single pulse
EAS
9.5
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt
EAR
0.036
dv/dt
6
Gate source voltage
VGS
±20
V
Power dissipation
Ptot
0.36
W
-55...+150
°C
I D = -0.33 A , V DD = -25 V, RGS = 25 W
mJ
kV/µs
I S = -0.33 A, V DS = -48 V, di/dt = 200 A/µs,
T jmax = 150 °C
T A = 25 °C
T j , T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
55/150/56
ESD Class; JESD22-A114-HBM
Class 0
Rev. 1.6
Page 1
2014-07-07
BSS 83 P
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
-
-
150
@ min. footprint
-
-
350
@ 6 cm 2 cooling area 1)
-
-
300
Characteristics
Thermal resistance, junction - soldering point
RthJS
K/W
( Pin 3 )
RthJA
SMD version, device on PCB:
Electrical Characteristics, at T j = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)DSS
-60
-
-
Gate threshold voltage, VGS = VDS
I D = -80 µA
VGS(th)
-1
-1.5
-2
Zero gate voltage drain current
IDSS
Static Characteristics
Drain- source breakdown voltage
V
VGS = 0 V, I D = -250 µA
µA
VDS = -60 V, V GS = 0 V, T j = 25 °C
-
-0.1
-1
VDS = -60 V, V GS = 0 V, T j = 125 °C
-
-10
-100
IGSS
-
-10
-100
nA
RDS(on)
-
2
3
W
RDS(on)
-
1.4
2
Gate-source leakage current
VGS = -20 V, VDS = 0 V
Drain-source on-state resistance
VGS = -4.5 V, I D = -0.27 A
Drain-source on-state resistance
VGS = -10 V, I D = -0.33 A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev. 1.6
Page 2
2014-07-07
BSS 83 P
Electrical Characteristics, at T j = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
gfs
0.24
0.47
-
S
Input capacitance
Ciss
-
62
78
pF
Coss
-
19
24
Crss
-
7
9
t d(on)
-
23
35
tr
-
71
106
t d(off)
-
56
70
tf
-
61
76
VDS³2*I D*RDS(on)max , ID = -0.27 A
VGS = 0 V, V DS = -25 V, f = 1 MHz
Output capacitance
VGS = 0 V, V DS = -25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, V DS = -25 V, f = 1 MHz
Turn-on delay time
ns
VDD = -30 V, V GS = -4.5 V, I D = -0.27 A,
RG = 43 W
Rise time
VDD = -30 V, V GS = -4.5 V, I D = -0.27 A,
RG = 43 W
Turn-off delay time
VDD = -30 V, V GS = -4.5 V, I D = -0.27 A,
RG = 43 W
Fall time
VDD = -30 V, V GS = -4.5 V, I D = -0.27 A,
RG = 43 W
Rev. 1.6
Page 3
2014-07-07
BSS 83 P
Electrical Characteristics, at T j = 25 °C, unless otherwise specified
Parameter
Symbol
Unit
Values
min.
typ.
max.
Q gs
-
0.12
0.18
Q gd
-
1.1
1.65
Qg
-
2.38
3.57
V(plateau)
-
-2.94
-
Dynamic Characteristics
Gate to source charge
nC
VDD = -48 V, ID = -0.33 A
Gate to drain charge
VDD = -48 , ID = -0.33 A
Gate charge total
VDD = -48 V, ID = -0.33 A, V GS = 0 to -10 V
Gate plateau voltage
V
VDD = -48 V , I D = -0.33 A
Parameter
Symbol
Values
Unit
min.
typ.
max.
IS
-
-
-0.33
ISM
-
-
-1.32
VSD
-
-0.84
-1.1
V
trr
-
59.4
89
ns
Qrr
-
37.5
56
nC
Reverse Diode
Inverse diode continuous forward current
A
T A = 25 °C
Inverse diode direct current,pulsed
T A = 25 °C
Inverse diode forward voltage
VGS = 0 V, I F = -0.33
Reverse recovery time
VR = -30 V, IF=I S , di F/dt = 80 A/µs
Reverse recovery charge
VR = -30 V, IF=l S , diF/dt = 80 A/µs
Rev. 1.6
Page 4
2014-07-07
BSS 83 P
Power Dissipation
Drain current
Ptot = f (TA)
ID = f (TA )
parameter: VGS ³ 10 V
BSS 83 P
BSS 83 P
0.38
-0.36
W
A
0.32
-0.28
-0.24
0.24
ID
Ptot
0.28
-0.20
0.20
-0.16
0.16
0.12
-0.12
0.08
-0.08
0.04
-0.04
0.00
0
20
40
60
80
100
120
°C
0.00
0
160
20
40
60
80
100
120
°C
TA
TA
Safe operating area
Transient thermal impedance
I D = f ( VDS )
ZthJC = f (tp )
parameter : D = 0 , T A = 25 °C
parameter : D = tp /T
-10
1
160
BSS 83 P
10 3
A
BSS 83 P
K/W
tp = 88.0µs
ID
=
RD
-10
100 µs
/I D
S(
VD
10 2
S
Z thJC
-10
0
)
on
1 ms
-1
10 1
D = 0.50
10 ms
0.20
0.10
-10 -2
10 0
0.05
single pulse
0.02
DC
-10 -3 -1
-10
-10
0
-10
1
V
0.01
-10
2
VDS
Rev. 1.6
10 -1 -5
-4
-3
-2
-1
0
1
2
10 10 10 10 10 10 10 10
s 10 4
tp
Page 5
2014-07-07
BSS 83 P
Typ. output characteristic
Typ. drain-source-on-resistance
I D = f (VDS); T j=25°C
parameter: tp = 80 µs
RDS(on) = f (ID )
parameter: VGS
BSS 83 P
A
BSS 83 P
6.5
Ptot = 0W
W
jik
hglf e d
VGS [V]
a
-2.5
-0.60
ID
c
-0.50
-0.40
-0.30
b
-3.0
c
-3.5
d
-4.0
e
-4.5
f
-5.0
g
-5.5
h
-6.0
i
-6.5
j
-7.0
b k
-8.0
l
-10.0
a
b
c
5.5
5.0
RDS(on)
-0.80
4.5
4.0
3.5
3.0
2.5
2.0
-0.20
d
e
l f g
j h ki
1.5
1.0
-0.10
a
VGS [V] =
0.5
0.00
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V
0.0
0.00
-5.0
a
b
c
d
e
f
-2.5 -3.0 -3.5 -4.0 -4.5 -5.0
-0.10
-0.20
-0.30
g
h
i
j
-5.5 -6.0 -6.5 -7.0
-0.40
k
l
-8.0 -10.0
-0.50 A
VDS
-0.65
ID
Typ. transfer characteristics I D= f ( V GS )
VDS³ 2 x I D x RDS(on)max
Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: tp = 80 µs
parameter: gfs
-1.2
0.70
A
S
0.60
-1.0
0.55
-0.9
0.50
0.45
gfs
ID
-0.8
-0.7
0.40
-0.6
0.35
-0.5
0.30
0.25
-0.4
0.20
-0.3
0.15
-0.2
0.10
-0.1
0.0
0.0
0.05
-1.0
-2.0
-3.0
-4.0
V
-6.0
VGS
Rev. 1.6
0.00
0.00
-0.10
-0.20
-0.30
-0.40
-0.50
A
-0.70
ID
Page 6
2014-07-07
BSS 83 P
Drain-source on-state resistance
Gate threshold voltage
RDS(on) = f (Tj)
VGS(th) = f (Tj)
parameter : I D = -0.33 A, VGS = -10 V
parameter: VGS = VDS , ID = -80 µA
BSS 83 P
-3.0
5.5
W
V
V GS(th)
RDS(on)
4.5
4.0
3.5
98%
-2.0
typ
3.0
-1.5
98%
2.5
2.0
typ
2%
-1.0
1.5
1.0
-0.5
0.5
0.0
-60
-20
20
60
100
°C
0.0
-60
180
-20
20
60
100
Tj
160
°C
Tj
Typ. capacitances
Forward characteristics of reverse diode
C = f (VDS)
IF = f (VSD )
parameter: VGS=0V, f=1 MHz
parameter: Tj , tp = 80 µs
10
3
-10 1
pF
BSS 83 P
A
-10 0
C
Ciss
IF
10 2
Coss
10 1
-10 -1
Crss
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 0
0
-5
-10
-15
-20
-25
V
-10 -2
0.0
-35
-0.8
-1.2
-1.6
-2.0
-2.4 V
-3.0
VSD
VDS
Rev. 1.6
-0.4
Page 7
2014-07-07
BSS 83 P
Avalanche energy
Typ. gate charge
EAS = f (Tj)
VGS = f (QGate )
parameter: ID = -0.33 A pulsed
para.: I D = -0.33 A , VDD = -25 V, RGS = 25
BSS 83 P
10
-16
mJ
V
8
-12
VGS
E AS
7
6
5
-10
-8
4
0,2 VDS max
-6
0,8 VDS max
3
-4
2
-2
1
0
25
45
65
85
105
125
165
°C
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8 nC
3.4
QGate
Tj
Drain-source breakdown voltage
V(BR)DSS = f (Tj)
BSS 83 P
-72
V(BR)DSS
V
-68
-66
-64
-62
-60
-58
-56
-54
-60
-20
20
60
100
°C
180
Tj
Rev. 1.6 Page 8
2014-07-07
BSS83P
Package Outline:
Footprint:
Rev 1.6
Packaging:
page 9
2014-07-07
BSS 83 P
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 1.6
Page 10
2014-07-07
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