Opti MOS P3 Power-Transistor BSZ120P03NS3E G

BSZ120P03NS3E G
OptiMOSTM P3 Power-Transistor
Product Summary
Features
V DS
-30
V
• single P-Channel in S3O8
R DS(on),max
12
mΩ
• Qualified according JEDEC 1) for target applications
ID
-40
A
PG-TSDSON-8
• 150 °C operating temperature
• V GS=25 V, specially suited for notebook applications
• Pb-free; RoHS compliant
• ESD protected
• applications: battery management, load switching
• Halogen-free according to IEC61249-2-21
Type
Package
Marking
Lead free
Halogen free
BSZ120P03NS3E G
PG-TSDSON-8
120P3NE
Yes
Yes
Packing
non-dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Unit
T C=25 °C
-40.0
A
T C=70 °C
-40
T A=25 °C2)
-11.0
-160
Parameter
Symbol Conditions
Continuous drain current
ID
Pulsed drain current
I D,pulse
T C=25 °C3)
Avalanche energy, single pulse
E AS
I D=-20 A, R GS=25 Ω
Gate source voltage
V GS
Power dissipation
P tot
Operating and storage temperature
ESD class
73
mJ
±25
V
T A=25 °C
52
W
T A=25 °C2)
2.1
T j, T stg
-55 … 150
JESD22-A114 HBM
Rev. 2.1
°C
55/150/56
IEC climatic category; DIN IEC 68-1
1)
class 2 (> 2 kV)
260
Soldering temperature
°C
J-STD20 and JESD22
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2009-11-16
BSZ120P03NS3E G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
2.4
-
-
60
Thermal characteristics
Thermal resistance,
junction - case
R thJC
Thermal resistance,
junction - ambient
R thJA
6 cm2 cooling area2)
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=-250µA
-30
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=-73 µA
-3.1
-2.5
-1.9
Zero gate voltage drain current
I DSS
V DS=-30 V, V GS=0 V,
T j=25 °C
-
-
-1
V DS=-30 V, V GS=0 V,
T j=125 °C
-
-
-100
V
µA
Gate-source leakage current
I GSS
V GS=-25 V, V DS=0 V
-
-
-10
µA
Drain-source on-state resistance
R DS(on)
V GS=-6 V, I D=-20 A
-
12.0
20.0
mΩ
V GS=-10 V, I D=-20 A
-
9.0
12.0
-
2.2
-
Ω
22
36
-
S
Gate resistance
RG
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=-20 A
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
Rev. 2.1
See Fig. 3 for more detailed information
page 2
2009-11-16
BSZ120P03NS3E G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
2240
3360
-
1090
1635
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
C rss
-
74
111
Turn-on delay time
t d(on)
-
13
20
Rise time
tr
-
11
17
Turn-off delay time
t d(off)
-
23
35
Fall time
tf
-
5
8
Gate to source charge
Q gs
-
11
17
Gate charge at threshold
Q g(th)
-
4
6
Gate to drain charge
Q gd
-
5
8
Switching charge
Q sw
-
13
20
Gate charge total
Qg
-
30
45
Gate plateau voltage
V plateau
-
4.6
-
Output charge
Q oss
-
25
38
nC
-
-
40
A
-
-
160
V GS=0 V, V DS=-15 V,
f =1 MHz
V DD=-15 V, V GS=10 V, I D=-20 A,
R G=6 Ω
pF
ns
Gate Charge Characteristics 3)
V DD=-15 V, I D=20 A,
V GS=0 to -10 V
V DD=-15 V, V GS=0 V
nC
V
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
V GS=0 V, I F=-20 A,
T j=25 °C
-
-
-1.1
V
Reverse recovery time
t rr
V R=15 V, I F=|I S|,
di F/dt =100 A/µs
-
47
-
ns
Reverse recovery charge
Q rr
-
55
-
nC
Rev. 2.1
T C=25 °C
page 3
2009-11-16
BSZ120P03NS3E G
1 Power dissipation
2 Drain current
P tot=f(T C); t p≤10 s
I D=f(T C); |V GS|≥10 V; t p≤10 s
60
48
44
50
40
36
32
-I D [A]
P tot [W]
40
30
28
24
20
20
16
12
10
8
4
0
0
0
40
80
120
0
160
40
80
T C [°C]
120
160
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C1); D =0
Z thJS=f(t p)
parameter: t p
parameter: D =t p/T
1000
101
10
100
1
1 µs
102
100
10 µs
0.5
100 µs
1 ms
Z thJS [K/W]
DC
0.1
0.05
0.02
1
0.01
10-1
0.1
10-2
0.01
0.1
10
Rev. 2.1
10 ms
limited by on-state
resistance
100
0.2
10
-I D [A]
101
1
-1
10
10
0
-V DS [V]
10
100
1
10
2
page 4
10-1
0.1
10-2
0.01
single pulse
0.00001
0.0001
0.001
0.01
0.1
1
10-5
10-4
10-3
10-2
10-1
100
t p [s]
10
101
2009-11-16
BSZ120P03NS3E G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
40
40
-10 V
35
-4.0 V
-5.0 V
30
R DS(on) [mΩ]
-4.5 V
-I D [A]
-4.5 V
30
20
-4.2V
25
20
-5.0 V
15
-6V
10
10
-4.0 V
-10 V
5
-3.7 V
-3.5 V
0
0
0
1
2
3
0
10
20
-V DS [V]
30
40
-I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
60
50
50
40
40
g fs [S]
-I D [A]
30
30
20
20
25 °C
10
150 °C
10
0
0
0
1
2
3
4
5
6
Rev. 2.1
0
10
20
30
-I D [A]
-V GS [V]
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BSZ120P03NS3E G
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=-20 A; V GS=-10 V
V GS(th)=f(T j); V GS=V DS; I D=-73 µA
20
4
18
3.5
16
3
14
2.5
12
-V GS(th) [V]
R DS(on) [mΩ]
9 Drain-source on-state resistance
98 %
10
max.
typ.
2
min.
1.5
typ.
8
1
6
0.5
4
0
-60
-20
20
60
100
140
180
-60
-20
20
T j [°C]
60
100
140
180
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
100
25 °C, typ
Ciss
Coss
103
150 °C, 98%
I F [A]
C [pF]
10
102
150 °C, typ
1
25 °C, 98%
Crss
101
0.1
0
5
10
15
20
25
30
Rev. 2.1
0
0.5
1
1.5
-V SD [V]
-V DS [V]
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2009-11-16
BSZ120P03NS3E G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=-20 A pulsed
parameter: T j(start)
parameter: V DD
10
2
10
9
8
-15 V
-6 V
7
-24 V
-I AV [A]
25 °C
101
-V GS [V]
6
100 °C
5
4
125 °C
3
2
1
0
0
100
100
10
1
t AV [µs]
10
2
10
15 Drain-source breakdown voltage
10
20
30
-Q gate [nC]
3
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=-250 µA
32
V GS
Qg
-V BR(DSS) [V]
30
V g s(th)
28
Q g(th)
Q sw
Q gs
26
-60
-20
20
60
100
140
Q g ate
Q gd
180
T j [°C]
Rev. 2.1
page 7
2009-11-16
BSZ120P03NS3E G
Package Outline
PG-TSDSON-8
Dimensions in mm
Rev. 2.1
page 8
2009-11-16
BSZ120P03NS3E G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.1
page 9
2009-11-16

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