MOSFET BSC093N15NS5 OptiMOS 5Power-Transistor,150V

MOSFET BSC093N15NS5 OptiMOS 5Power-Transistor,150V
BSC093N15NS5
MOSFET
OptiMOSTM5Power-Transistor,150V
SuperSO8
8
Features
•N-channel,normallevel
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowon-resistanceRDS(on)
•Verylowreverserecoverycharge(Qrr)
•150°Coperatingtemperature
•Pb-freeleadplating;RoHScompliant
•QualifiedaccordingtoJEDEC1)fortargetapplication
•Idealforhigh-frequencyswitchingandsynchronousrectification
Value
Unit
VDS
150
V
RDS(on),max
9.3
mΩ
ID
87
A
Qrr
39
nC
Type/OrderingCode
Package
BSC093N15NS5
PG-TDSON-8
1)
5
6
2
Marking
093N15NS
3
6
5
4
1
Table1KeyPerformanceParameters
Parameter
7
3
2
4
7
8
1
S1
8D
S2
7D
S3
6D
G4
5D
RelatedLinks
-
J-STD20 and JESD22
Final Data Sheet
1
Rev.2.1,2016-01-22
OptiMOSTM5Power-Transistor,150V
BSC093N15NS5
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Final Data Sheet
2
Rev.2.1,2016-01-22
OptiMOSTM5Power-Transistor,150V
BSC093N15NS5
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current
Values
Unit
Note/TestCondition
87
55
A
TC=25°C
TC=100°C
-
348
A
TC=25°C
-
-
130
mJ
ID=50A,RGS=25Ω
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
139
W
TC=25°C
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
ID,pulse
-
Avalanche energy, single pulse
EAS
Gate source voltage
Pulsed drain current1)
2)
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case
Values
Min.
Typ.
Max.
RthJC
-
0.54
0.9
K/W
-
Thermal resistance, junction - ambient,
RthJA
6 cm2 cooling area3)
-
-
50
K/W
-
Unit
Note/TestCondition
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Min.
Typ.
Max.
V(BR)DSS
150
-
-
V
VGS=0V,ID=1mA
Gate threshold voltage
VGS(th)
3.0
3.8
4.6
V
VDS=VGS,ID=107µA
Zero gate voltage drain current
IDSS
-
0.1
10
1
100
µA
VDS=120V,VGS=0V,Tj=25°C
VDS=120V,VGS=0V,Tj=125°C
Gate-source leakage current
IGSS
-
1
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
7.9
8.7
9.3
10.5
mΩ
VGS=10V,ID=44A
VGS=8V,ID=22A
Gate resistance4)
RG
-
0.9
1.4
Ω
-
Transconductance
gfs
34
67
-
S
|VDS|>2|ID|RDS(on)max,ID=44A
1)
See Diagram 3 for more detailed information
See Diagram 13 for more detailed information
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
4)
Defined by design. Not subject to production test
2)
Final Data Sheet
3
Rev.2.1,2016-01-22
OptiMOSTM5Power-Transistor,150V
BSC093N15NS5
Table5Dynamiccharacteristics
Parameter
Symbol
Values
Unit
Note/TestCondition
3230
pF
VGS=0V,VDS=75V,f=1MHz
604
803
pF
VGS=0V,VDS=75V,f=1MHz
-
15
26
pF
VGS=0V,VDS=75V,f=1MHz
td(on)
-
14
-
ns
VDD=75V,VGS=10V,ID=44A,
RG,ext=3Ω
Rise time
tr
-
4.3
-
ns
VDD=75V,VGS=10V,ID=44A,
RG,ext=3Ω
Turn-off delay time
td(off)
-
14.4
-
ns
VDD=75V,VGS=10V,ID=44A,
RG,ext=3Ω
Fall time
tf
-
3.8
-
ns
VDD=75V,VGS=10V,ID=44A,
RG,ext=3Ω
Unit
Note/TestCondition
Min.
Typ.
Max.
Ciss
-
2430
Output capacitance
Coss
-
Reverse transfer capacitance1)
Crss
Turn-on delay time
Input capacitance1)
1)
Table6Gatechargecharacteristics2)
Parameter
Symbol
Values
Min.
Typ.
Max.
Qgs
-
14
-
nC
VDD=75V,ID=44A,VGS=0to10V
Gate to drain charge
Qgd
-
6.8
10.2
nC
VDD=75V,ID=44A,VGS=0to10V
Switching charge
Qsw
-
13.4
-
nC
VDD=75V,ID=44A,VGS=0to10V
Gate charge total
Qg
-
33
40.7
nC
VDD=75V,ID=44A,VGS=0to10V
Gate plateau voltage
Vplateau
-
5.7
-
V
VDD=75V,ID=44A,VGS=0to10V
Qoss
-
91
121
nC
VDD=75V,VGS=0V
Unit
Note/TestCondition
Gate to source charge
1)
1)
1)
Output charge
Table7Reversediode
Parameter
Symbol
Diode continous forward current
Diode pulse current
Diode forward voltage
1)
Reverse recovery time
1)
Reverse recovery charge
1)
2)
Values
Min.
Typ.
Max.
IS
-
-
87
A
TC=25°C
IS,pulse
-
-
348
A
TC=25°C
VSD
-
0.88
1.2
V
VGS=0V,IF=44A,Tj=25°C
trr
-
43
86
ns
VR=75V,IF=44,diF/dt=100A/µs
Qrr
-
39
78
nC
VR=75V,IF=44,diF/dt=100A/µs
Defined by design. Not subject to production test
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.2.1,2016-01-22
OptiMOSTM5Power-Transistor,150V
BSC093N15NS5
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
160
90
140
80
70
120
60
ID[A]
Ptot[W]
100
80
50
40
60
30
40
20
20
0
10
0
50
100
150
0
200
0
50
100
TC[°C]
150
200
TC[°C]
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
100
10
1 µs
0.5
102
10 µs
100 µs
0.2
1
ZthJC[K/W]
ID[A]
10
1 ms
0
10
0.1
10-1
0.05
10 ms
0.02
DC
0.01
10-1
single pulse
10-2
10-1
100
101
102
103
10-2
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
5
Rev.2.1,2016-01-22
OptiMOSTM5Power-Transistor,150V
BSC093N15NS5
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
360
20
10V
5.5 V
320
6V
8V
280
6.5 V
15
7V
RDS(on)[mΩ]
ID[A]
240
200
160
7V
8V
10
10 V
120
6.5 V
5
80
6V
40
5.5 V
0
0
1
2
3
4
5
6
0
7
0
40
80
120
VDS[V]
160
200
240
280
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
200
140
180
120
160
100
140
80
gfs[S]
ID[A]
120
100
60
80
60
40
40
20
20
0
175 °C
0
2
25 °C
4
6
8
10
0
0
20
VGS[V]
60
80
100
120
140
160
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
40
gfs=f(ID);Tj=25°C
6
Rev.2.1,2016-01-22
OptiMOSTM5Power-Transistor,150V
BSC093N15NS5
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
20
5.0
4.5
1070 µA
4.0
15
107 µA
3.0
max
VGS(th)[V]
RDS(on)[mΩ]
3.5
10
typ
2.5
2.0
1.5
5
1.0
0.5
0
-60
-20
20
60
100
0.0
-60
140
-20
20
Tj[°C]
60
100
140
Tj[°C]
RDS(on)=f(Tj);ID=44A;VGS=10V
VGS(th)=f(Tj);VGS=VDS;parameter:ID
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
103
10
25 °C
150 °C
25°C max
150°C max
Ciss
103
Coss
IF[A]
C[pF]
102
102
Crss
101
101
100
0
20
40
60
80
100
100
0.0
0.5
VDS[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
1.0
1.5
2.0
VSD[V]
IF=f(VSD);parameter:Tj
7
Rev.2.1,2016-01-22
OptiMOSTM5Power-Transistor,150V
BSC093N15NS5
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
2
10
10
75 V
8
25 °C
6
VGS[V]
125 °C
IAS[A]
120 V
30 V
100 °C
101
4
2
100
100
101
102
103
0
0
tAV[µs]
10
20
30
40
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=44Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Gate charge waveforms
160
VBR(DSS)[V]
155
150
145
140
-60
-20
20
60
100
140
180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
8
Rev.2.1,2016-01-22
OptiMOSTM5Power-Transistor,150V
BSC093N15NS5
5PackageOutlines
Figure1OutlinePG-TDSON-8,dimensionsinmm
Final Data Sheet
9
Rev.2.1,2016-01-22
OptiMOSTM5Power-Transistor,150V
BSC093N15NS5
RevisionHistory
BSC093N15NS5
Revision:2016-01-22,Rev.2.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2015-10-09
Release of final version
2.1
2016-01-22
Update diagram 13
TrademarksofInfineonTechnologiesAG
AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,
EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,
ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,
PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,
SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.
TrademarksupdatedAugust2015
OtherTrademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.
WeListentoYourComments
Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously
improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to:
[email protected]
Publishedby
InfineonTechnologiesAG
81726München,Germany
©2015InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
10
Rev.2.1,2016-01-22
Was this manual useful for you? yes no
Thank you for your participation!

* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project

Download PDF

advertisement