Opti MOS 3 Power-Transistor BSZ900N15NS3 G

Opti MOS 3 Power-Transistor BSZ900N15NS3 G
s
BSZ900N15NS3 G
OptiMOSTM3 Power-Transistor
Product Summary
Package
Marking
• N-channel, normal level
V DS
150
V
R DS(on),max
90
mΩ
ID
13
A
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
PG-TSDSON-8
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
Type
Package
Marking
BSZ900N15NS3 G
PG-TSDSON-8
900N15N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C
13
T C=100 °C
8
Unit
A
Pulsed drain current2)
I D,pulse
T C=25 °C
52
Avalanche energy, single pulse
E AS
I D=10 A, R GS=25 Ω
30
mJ
Gate source voltage
V GS
±20
V
Power dissipation
P tot
38
W
Operating and storage temperature
T j, T stg
-55 ... 150
°C
T C=25 °C
IEC climatic category; DIN IEC 68-1
1)
Rev. 2.1
55/150/56
J-STD20 and JESD22
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BSZ900N15NS3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
3.3
-
-
60
150
-
-
Thermal characteristics
Thermal resistance, junction - case
R thJC
Thermal resistance,
junction - ambient
R thJA
6 cm2 cooling area3)
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=20 µA
2
3
4
Zero gate voltage drain current
I DSS
V DS=120 V, V GS=0 V,
T j=25 °C
-
0.01
1
V DS=120 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=10 A
-
74
90
mΩ
V GS=8 V, I D=5 A
-
75
91
-
1.7
-
Ω
6
12
-
S
Gate resistance
RG
Transconductance
g fs
3)
Rev. 2.1
|V DS|>2|I D|R DS(on)max,
I D=10 A
see figure 3
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BSZ900N15NS3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
380
510
-
46
61
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
C rss
-
3
-
Turn-on delay time
t d(on)
-
4
-
Rise time
tr
-
4
-
Turn-off delay time
t d(off)
-
8
-
Fall time
tf
-
3
-
Gate to source charge
Q gs
-
1.9
-
Gate to drain charge
Q gd
-
0.9
-
-
1.7
-
V GS=0 V, V DS=75 V,
f =1 MHz
V DD=75 V, V GS=10 V,
I D=5 A, R G=1.6 Ω
pF
ns
Gate Charge Characteristics 4)
V DD=75 V, I D=5 A,
V GS=0 to 10 V
nC
Switching charge
Q sw
Gate charge total
Qg
-
5.0
7
Gate plateau voltage
V plateau
-
5.2
-
Output charge
Q oss
-
12
17
nC
-
-
13
A
-
-
52
-
0.9
1.2
-
59
-
123
V DD=75 V, V GS=0 V
V
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
4)
Rev. 2.1
T C=25 °C
V GS=0 V, I F=13 A,
T j=25 °C
V R=75 V, I F=5 A ,
di F/dt =100 A/µs
V
ns
-
nC
See figure 16 for gate charge parameter definition
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BSZ900N15NS3 G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
40
15
35
30
10
I D [A]
P tot [W]
25
20
15
5
10
5
0
0
0
40
80
120
160
0
40
80
T C [°C]
120
160
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
102
101
1 µs
10 µs
101
0.5
Z thJC [K/W]
100 µs
I D [A]
1 ms
100
0.1
DC
100
0.2
0.05
0.02
0.01
single pulse
10-1
10-1
10-1
100
101
102
103
V DS [V]
Rev. 2.1
t p [s]
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BSZ900N15NS3 G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
30
150
140
5V
130
25
10 V
5.5 V
120
6V
110
7V
100
90
R DS(on) [mΩ]
I D [A]
20
15
6V
8V
80
10 V
70
60
10
50
40
5.5 V
30
5
20
5V
10
4.5 V
0
0
0
1
2
3
0
4
8
V DS [V]
12
16
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
28
20
24
15
20
I D [A]
g fs [S]
16
12
10
8
5
4
150 °C
25 °C
0
0
0
2
4
6
8
V GS [V]
Rev. 2.1
0
10
20
30
I D [A]
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BSZ900N15NS3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=10 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
200
4
180
3.5
160
200 µA
3
20 µA
2.5
120
V GS(th) [V]
R DS(on) [mΩ]
140
98 %
100
typ
80
2
1.5
60
1
40
0.5
20
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
103
100
Ciss
102
25 °C
150 °C, 98%
I F [A]
C [pF]
Coss
150 °C
10
101
25 °C, 98%
Crss
100
1
0
20
40
60
80
100
Rev. 2.1
0
0.5
1
1.5
2
V SD [V]
V DS [V]
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BSZ900N15NS3 G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=5 A pulsed
parameter: T j(start)
parameter: V DD
100
10
120 V
8
75 V
30 V
V GS [V]
I AS [A]
6
10
4
25 °C
100 °C
2
125 °C
1
0
1
10
100
1000
0
2
4
6
Q gate [nC]
t AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
170
V GS
Qg
165
V BR(DSS) [V]
160
155
150
V g s(th)
145
Q g(th)
140
Q sw
Q gs
135
-60
-20
20
60
100
140
Q g ate
Q gd
180
T j [°C]
Rev. 2.1
page 7
2011-05-16
BSZ900N15NS3 G
Package Outline: PG-TSDSON-8
Rev. 2.1
page 8
2011-05-16
BSZ900N15NS3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
Rev. 2.1
page 9
2011-05-16
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