MOSFET DataSheet OptiMOS PowerManagement&Multimarket

MOSFET DataSheet OptiMOS PowerManagement&Multimarket
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTMFDPower-Transistor,200V
IPB117N20NFD
DataSheet
Rev.2.0
Final
PowerManagement&Multimarket
OptiMOSTMFDPower-Transistor,200V
IPB117N20NFD
1Description
D²PAK
Features
•N-channel,normallevel
•FastDiode(FD)withreducedQrr
•Optimizedforhardcommutationruggedness
•Verylowon-resistanceRDS(on)
•175°Coperatingtemperature
•Pb-freeleadplating;RoHScompliant
•QualifiedaccordingtoJEDEC1)fortargetapplication
•Halogen-freeaccordingtoIEC61249-2-21
Drain
Pin 2, tab
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
200
V
RDS(on),max
11.7
mΩ
ID
84
A
Type/OrderingCode
Package
IPB117N20NFD
PG-TO 263-3
1)
Gate
Pin 1
Source
Pin 3
Marking
117N20NF
RelatedLinks
-
J-STD20 and JESD22
Final Data Sheet
2
Rev.2.0,2014-02-06
OptiMOSTMFDPower-Transistor,200V
IPB117N20NFD
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
3
Rev.2.0,2014-02-06
OptiMOSTMFDPower-Transistor,200V
IPB117N20NFD
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
at 25 °C
Parameter
Symbol
Continuous drain current
Values
Unit
Note/TestCondition
84
60
A
TC=25°C
TC=100°C
-
336
A
TC=25°C
-
-
375
mJ
ID=67A,RGS=25Ω
dv/dt
-
-
60
kV/µs
ID=160A,VDS=100V,
di/dt=1500A/µs,Tj,max=175°C
Gate source voltage
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
300
W
TC=25°C
Operating and storage temperature
Tj,Tstg
-55
-
175
°C
IEC climatic category;
DIN IEC 68-1: 55/175/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
Pulsed drain current 1)
ID,pulse
-
Avalanche energy, single pulse
EAS
Reversediodepeakdv/dt
3Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case
Values
Min.
Typ.
Max.
RthJC
-
0.3
0.5
K/W
-
Thermal resistance, junction - ambient,
RthJA
minimal footprint
-
-
62
K/W
-
Thermal resistance, junction - ambient,
RthJA
6 cm2 cooling area 2)
-
-
40
K/W
-
1)
See figure 3
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
2)
Final Data Sheet
4
Rev.2.0,2014-02-06
OptiMOSTMFDPower-Transistor,200V
IPB117N20NFD
4Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
3
4
V
VDS=VGS,ID=270µA
-
0.1
10
1
100
µA
VDS=160V,VGS=0V,Tj=25°C
VDS=160V,VGS=0V,Tj=125°C
IGSS
-
1
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
10.3
11.7
mΩ
VGS=10V,ID=84A
Gate resistance
RG
-
2.4
3.6
Ω
-
Transconductance
gfs
70
139
-
S
|VDS|>2|ID|RDS(on)max,ID=84A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
200
-
Gate threshold voltage
VGS(th)
2
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Values
Min.
Typ.
Max.
Ciss
-
5000
6650
pF
VGS=0V,VDS=100V,f=1MHz
Output capacitance
Coss
-
400
532
pF
VGS=0V,VDS=100V,f=1MHz
Reverse transfer capacitance
Crss
-
6
13
pF
VGS=0V,VDS=100V,f=1MHz
Turn-on delay time
td(on)
-
13
-
ns
VDD=100V,VGS=10V,ID=42A,
RG,ext=1.6Ω
Rise time
tr
-
10
-
ns
VDD=100V,VGS=10V,ID=42A,
RG,ext=1.6Ω
Turn-off delay time
td(off)
-
24
-
ns
VDD=100V,VGS=10V,ID=42A,
RG,ext=1.6Ω
Fall time
tf
-
8
-
ns
VDD=100V,VGS=10V,ID=42A,
RG,ext=1.6Ω
Unit
Note/TestCondition
Table6Gatechargecharacteristics1)
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
-
25
-
nC
VDD=100V,ID=84A,VGS=0to10V
Gate to drain charge
Qgd
-
8
-
nC
VDD=100V,ID=84A,VGS=0to10V
Switching charge
Qsw
-
17
-
nC
VDD=100V,ID=84A,VGS=0to10V
Gate charge total
Qg
-
65
87
nC
VDD=100V,ID=84A,VGS=0to10V
Gate plateau voltage
Vplateau
-
4.7
-
V
VDD=100V,ID=84A,VGS=0to10V
Output charge
Qoss
-
162
-
nC
VDD=100V,VGS=0V
1)
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
5
Rev.2.0,2014-02-06
OptiMOSTMFDPower-Transistor,200V
IPB117N20NFD
Table7Reversediode
Parameter
Symbol
Values
Unit
Note/TestCondition
84
A
TC=25°C
-
336
A
TC=25°C
-
-
160
A
TC=25°C,diF/dt=1500A/µs
VSD
-
1
1.2
V
VGS=0V,IF=84A,Tj=25°C
Reverse recovery time
trr
-
144
288
ns
VR=100V,IF=56A,diF/dt=100A/µs
Reverse recovery charge
Qrr
-
629
-
nC
VR=100V,IF=56A,diF/dt=100A/µs
Min.
Typ.
Max.
IS
-
-
IS,pulse
-
IS,hard
Diode forward voltage
Diode continous forward current
Diode pulse current
1)
Diode hard commutation current
1)
2)
2)
Diode pulse current is defined by thermal and/or package limits
Maximum allowed hard-commutated current through diode at di/dt=1500 A/µs
Final Data Sheet
6
Rev.2.0,2014-02-06
OptiMOSTMFDPower-Transistor,200V
IPB117N20NFD
5Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
320
100
280
80
240
60
ID[A]
Ptot[W]
200
160
40
120
80
20
40
0
0
50
100
150
0
200
0
50
100
TC[°C]
150
200
TC[°C]
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
100
10
1 µs
10 µs
100 µs
102
ZthJC[K/W]
ID[A]
0.5
1 ms
101
10 ms
10-1
0.2
0.1
DC
0.05
100
0.02
0.01
single pulse
10-1
10-1
100
101
102
103
10-2
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
7
Rev.2.0,2014-02-06
OptiMOSTMFDPower-Transistor,200V
IPB117N20NFD
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
200
20
10 V
175
4.5 V
150
15
7V
5V
5V
RDS(on)[mΩ]
ID[A]
125
100
75
4.5 V
50
7V
10 V
10
5
25
0
0
1
2
3
4
0
5
0
20
40
60
VDS[V]
80
100
120
140
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
200
180
180
160
160
140
140
120
gfs[S]
ID[A]
120
100
100
80
80
60
60
40
40
175 °C
20
0
0
2
20
25 °C
4
6
8
0
0
25
VGS[V]
75
100
125
150
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
50
gfs=f(ID);Tj=25°C
8
Rev.2.0,2014-02-06
OptiMOSTMFDPower-Transistor,200V
IPB117N20NFD
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
35
4.0
30
3.5
2700 µA
3.0
25
270 µA
20
VGS(th)[V]
RDS(on)[mΩ]
2.5
98%
15
2.0
1.5
typ
10
1.0
5
0.5
0
-60
-20
20
60
100
140
0.0
-60
180
-20
20
Tj[°C]
60
100
140
180
Tj[°C]
RDS(on)=f(Tj);ID=84A;VGS=10V
VGS(th)=f(Tj);VGS=VDS;parameter:ID
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
103
10
Ciss
25 °C
175 °C
25°C, 98%
175°C, 98%
Coss
103
IF[A]
C[pF]
102
102
Crss
101
101
100
0
40
80
120
160
100
0.0
0.5
VDS[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
1.0
1.5
2.0
VSD[V]
IF=f(VSD);parameter:Tj
9
Rev.2.0,2014-02-06
OptiMOSTMFDPower-Transistor,200V
IPB117N20NFD
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
102
10
25 °C
8
160 V
100 °C
100 V
6
40 V
VGS[V]
IAS[A]
125 °C
101
4
2
100
100
101
102
103
0
0
tAV[µs]
20
40
60
80
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=84Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Gate charge waveforms
230
220
VBR(DSS)[V]
210
200
190
180
170
160
-60
-20
20
60
100
140
180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
10
Rev.2.0,2014-02-06
OptiMOSTMFDPower-Transistor,200V
IPB117N20NFD
6PackageOutlines
Figure1OutlinePG-TO263-3,dimensionsinmm/inches
Final Data Sheet
11
Rev.2.0,2014-02-06
OptiMOSTMFDPower-Transistor,200V
IPB117N20NFD
RevisionHistory
IPB117N20NFD
Revision:2014-02-06,Rev.2.0
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2014-02-06
Release of final version
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Publishedby
InfineonTechnologiesAG
81726München,Germany
©2014InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
12
Rev.2.0,2014-02-06
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