BSG0813NDI Product Summary Power Block Q1 Q2 25 25 V VGS=10 V 3 1.2 mW VGS=4.5 V 4 1.7 50 50 Features • Dual asymmetric N-channel OptiMOS™5 MOSFET VDS • Logic level (4.5V rated) RDS(on),max • Optimized for high performance buck converters ID • Pb-free lead plating; RoHS compliant S1/D2 (VPhase) • Qualified according to JEDEC1) for target applications (5) Q1 • Halogen-free according to IEC61249-2-21 A (4) D1 (Vin) (9) S1/D2 (VPhase) (6) (3) D1 (Vin) S1/D2 (VPhase) (7) (2) S1 (VPhase) (1) G1 (GHS) Q2 • Monolithic integrated Schottky like diode G2 (GLS) (8) (10) S2 (GND) Top view Type Package BSG0813NDI Marking PG-TISON8-4 0813NDI Maximum ratings, at Tj=25°C, unless otherwise specified 2) Parameter Value Symbol Conditions Unit Q1 Q2 T C=70 °C, V GS=10 V 50 50 T C=70 °C, V GS=4.5 V 50 50 31 50 V GS=4.5 V4) 19 33 I D,pulse T C=70 °C 160 160 Avalanche energy, single pulse E AS Q1: I D=10 A, Q2: I D=20 A, R GS=25 W 30 90 Gate source voltage V GS T j=25 °C Power dissipation P tot T A=25 °C3) 6.25 6.25 T A=25 °C4) 2.5 2.5 Continuous drain current ID T A=25 °C, V GS=4.5 V3) T A=25 °C, Pulsed drain current Operating and storage temperature T j, T stg mJ V -55 ... 150 W °C 55/150/56 IEC climatic category; DIN IEC 68-1 1) ±16 A J-STD20 and JESD22 Rev.2.1 page 1 2016-03-08 BSG0813NDI Parameter Values Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction case Q1 R thJC - - 4.3 Q2 - - 2.2 Thermal resistance, junction ambient2) Q1 R thJA Application specific board3) - - 20 6 cm2 cooling area4) - - 50 V (BR)DSS V GS=0 V, I D=1 mA 256) - - V Breakdown voltage temperature coefficient Q1 dV (BR)DSS I D=10 mA, referenced to 25 °C Q2 /dT j - 15 - mV/K Gate threshold voltage Q1 V DS=V GS, I D=250 µA 1.2 1.6 2 V V DS=25 V, V GS=0 V, T j=25 °C - - 1 µA - - 500 V DS=20 V, V GS=0 V, T j=125 °C - - 100 - 1 - mA V GS=16 V, V DS=0 V - - 100 nA - 3.2 4.0 mW - 1.2 1.7 - 2.4 3.0 Q2 - 0.9 1.2 Q1 R G - 0.7 1.2 Q2 - 1 1.7 46 93 - 70 140 - Q2 Q1 Q2 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Q1 Q2 V GS(th) Q2 Zero gate voltage drain current Q1 I DSS Q2 Q1 Q2 Gate-source leakage current Q1 I GSS Q2 Drain-source on-state resistance Q1 R DS(on) V GS=4.5 V, I D=20 A Q2 Q1 V GS=10 V, I D=20 A Gate resistance Transconductance Q1 g fs Q2 2) |V DS|>2|I D|R DS(on)max, I D=20 A W S Only one of both transistors active Rev.2.1 page 2 2016-03-08 BSG0813NDI Parameter Values Symbol Conditions Unit min. typ. max. Q1 C iss - 780 1100 Q2 - 2200 2900 - 390 520 - 1300 1700 Q1 Crss - 38 - Q2 - 71 - Q1 t d(on) - 4.3 - Q2 - 3.6 - - 4.7 - - 2.8 - - 4.3 - Q2 - 5.7 - Q1 t f - 1.4 - Q2 - 1.7 - Q1 Q gs - 2.0 Gate to drain charge Q gd - 1.4 - Gate charge total Qg - 5.6 8.4 Gate plateau voltage V plateau - 2.6 - V - 5.2 - nC Dynamic characteristics Input capacitance Output capacitance Q1 C oss Q2 Reverse transfer capacitance Turn-on delay time Rise time Q1 t r Q2 Turn-off delay time Fall time Q1 t d(off) V GS=0 V, V DS= 12 V, f =1 MHz V IN=12 V, V DRV=5 V, F SW=500 KHz, I OUT=20 A 5) pF ns Gate Charge Characteristics Gate to source charge Gate to source charge Q2 Q gs V DD=12 V, I D=20 A, V GS=0 to 4.5 V nC Gate to drain charge Q gd - 3.1 - Gate charge total Qg - 15 22 Gate plateau voltage V plateau - 2.3 - V - 8 - nC - 27 - Output charge Q1 Q oss V DD=12 V, V GS=0 V Q2 3) 8 Layers copper 70μm thickness. PCB in still air Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 μm thick) copper area for drain connection. PCB is vertical in still air. 4) Rev.2.1 page 3 2016-03-08 BSG0813NDI Parameter Values Symbol Conditions Unit min. typ. max. - - 29 - - 50 Q1 I S,pulse - - 160 Q2 - - 160 Reverse Diode Diode continuous forward current Q1 I S Q2 A T C=25 °C Diode pulse current Diode forward voltage Reverse recovery charge Q1 V SD V GS=0 V, I F=20 A, T j=25 °C - 0.82 1 Q2 V GS=0 V, I F=11 A, T j=25 °C - 0.52 0.7 V R=12 V, I F=I S, di F/dt =100 A/µs - 10 - Q1 Q rr Q2 V nC 5) For more information see application note n° TBD The device can withstand a pulse of not more than 30 V for a duration of up to 2 ns at a frequency of 600 kHz with maximum buck converter input voltage V IN=16 V 6) Rev.2.1 page 4 2016-03-08 BSG0813NDI 1 Power dissipation (Q1) P tot=f(T A)4) 3 3 2.5 2.5 2 2 Ptot [W] Ptot [W] P tot=f(T A) 2 Power dissipation (Q2) 4) 1.5 1.5 1 1 0.5 0.5 0 0 0 40 80 120 160 0 40 TA [°C] 4 Drain current (Q2) I D=f(T C) I D=f(T C) parameter: V GS≥10 V parameter: V GS≥10 V 60 60 50 50 40 40 ID [A] ID [A] 120 160 120 160 TA [°C] 3 Drain current (Q1) 30 30 20 20 10 10 0 0 0 40 80 120 160 TC [°C] Rev.2.1 80 0 40 80 TC [°C] page 5 2016-03-08 BSG0813NDI 5 Safe operating area (Q1) 6 Safe operating area (Q2) I D=f(V DS); T C=25 °C; D =0 I D=f(V DS); T C=25 °C; D =0 parameter: t p parameter: t p 103 103 1 µs 102 1 µs 10 µs 102 10 µs 100 µs 100 µs 1 ms ID [A] ID [A] 1 ms 101 10 ms 10 ms 101 DC DC 100 100 10-1 10-1 10-1 100 101 102 10-1 100 VDS [V] 101 102 VDS [V] 7 Max. transient thermal impedance (Q1) 8 Max. transient thermal impedance (Q2) Z thJC=f(t p) Z thJC=f(t p) parameter: D =t p/T parameter: D =t p/T 101 101 0.5 100 ZthJC [K/W] ZthJC [K/W] 0.5 0.2 100 0.1 0.2 0.1 0.05 0.02 0.05 0.01 10-1 0.02 single pulse 0.01 single pulse 10-1 10-2 10-5 10-4 10-3 10-2 10-1 100 tp [s] Rev.2.1 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 6 2016-03-08 BSG0813NDI 9 Typ. output characteristics (Q1) 10 Typ. output characteristics (Q2) I D=f(V DS); T j=25 °C I D=f(V DS); T j=25 °C parameter: V GS parameter: V GS 160 400 4V 10 V 10 V 3.5 V 3.3 V 4.5 V 4V 3.5 V 4.5 V 120 3.3 V 300 ID [A] ID [A] 3V 80 200 3V 2.8 V 2.8 V 40 100 0 0 0 1 2 3 0 1 VDS [V] 2 3 VDS [V] 11 Typ. drain-source on resistance (Q1) 12 Typ. drain-source on resistance (Q2) R DS(on)=f(I D); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 10 3 2.5 8 3V 3V RDS(on) [mW] RDS(on) [mW] 2 6 3.3 V 3.5 V 4 4V 4.5 V 5V 3.3 V 3.5 V 1.5 4V 4.5 V 5V 1 10 V 10 V 2 0.5 0 0 0 20 40 60 80 ID [A] Rev.2.1 0 20 40 60 80 ID [A] page 7 2016-03-08 BSG0813NDI I D=f(V GS); |V DS |>2 | I D| R DS(on)max I D=f(V GS); |V DS |>2 | I D| R DS(on)max parameter: T j parameter: T j 160 400 120 300 ID [A] 14 Typ. transfer characteristics (Q2) ID [A] 13 Typ. transfer characteristics (Q1) 80 40 200 100 150 °C 25 °C 150 °C 25 °C 0 0 0 1 2 3 0 4 1 2 VGS [V] 3 4 VGS [V] 15 Drain-source on-state resistance (Q1) 16 Drain-source on-state resistance (Q2) R DS(on)=f(T j); I D=20 A; V GS=10 V R DS(on)=f(T j); I D=20 A; V GS=10 V 2 7 6 1.5 RDS(on) [mW] RDS(on) [mW] 5 4 3 typ 1 typ 2 0.5 1 0 0 -60 -20 20 60 100 140 180 Tj [°C] Rev.2.1 -60 -20 20 60 100 140 180 Tj [°C] page 8 2016-03-08 BSG0813NDI 18 Typ. gate threshold voltage (Q2) V GS(th)=f(T j); V GS=V DS; I D=250 µA V GS(th)=f(T j); V GS=V DS; I D=10 mA 2.8 2.8 2.4 2.4 2 2 1.6 1.6 VGS(th) [V] VGS(th) [V] 17 Typ. gate threshold voltage (Q1) 1.2 1.2 0.8 0.8 0.4 0.4 0 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 19 Typ. capacitances (Q1) 20 Typ. capacitances (Q2) C =f(V DS); V GS=0 V; f =1 MHz C =f(V DS); V GS=0 V; f =1 MHz 104 104 Ciss Ciss 103 103 Coss C [pF] C [pF] Coss 102 Crss 102 Crss 101 100 101 0 5 10 15 20 25 VDS [V] Rev.2.1 0 5 10 15 20 25 VDS [V] page 9 2016-03-08 BSG0813NDI 21 Forward characteristics of reverse diode (Q1) 22 Forward characteristics of reverse diode (Q2) I F=f(V SD) I F=f(V SD) parameter: T j parameter: T j 103 103 102 102 150 °C 25 °C IF [A] 101 IF [A] 101 100 100 -55 °C 25 °C 10-1 150 °C 10-1 100 °C 10-2 10-2 0 0.4 0.8 1.2 0 0.4 VSD [V] 0.8 1.2 VSD [V] 23 Avalanche characteristics (Q1) 24 Avalanche characteristics (Q2) I AS=f(t AV); R GS=25 W I AS=f(t AV); R GS=25 W parameter: T j(start) parameter: T j(start) 102 102 IAV [A] IAV [A] 25 °C 25 °C 101 100 °C 125 °C 100 °C 101 125 °C 100 100 100 101 102 103 tAV [µs] Rev.2.1 100 101 102 103 tAV [µs] page 10 2016-03-08 BSG0813NDI 25 Typ. gate charge (Q1) 26 Typ. gate charge (Q2) V GS=f(Q gate); I D=20 A pulsed V GS=f(Q gate); I D=20 A pulsed parameter: V DD parameter: V DD 10 10 8 8 12 V 12 V 5V 20 V 20 V 5V VGS [V] 6 VGS [V] 6 4 4 2 2 0 0 0 2 4 6 8 10 12 14 0 10 Qgate [nC] 20 30 Qgate [nC] 27 Drain-source breakdown voltage (Q1) 28 Typ. drain-source leakage current (Q2) V BR(DSS)=f(T j); I D=1 mA I DSS=f(V DS ); V GS=0 V parameter: T j 28 10-2 27 26 10-3 125 °C IDSS [A] VBR(DSS) [V] 25 24 100 °C 10-4 75 °C 23 10-5 22 21 -60 -20 20 60 100 140 180 0 5 10 15 20 VDS [V] Tj [°C] Rev.2.1 25 °C 10-6 20 page 11 2016-03-08 BSG0813NDI Package Outline PG-TISON8-4 Rev.2.1 page 12 2016-03-08 BSG0813NDI Boardpads & Apertures PG-TISON8-4 All the dimensions in mm Rev.2.1 page 13 2016-03-08 25VOptiMOSª5PowerMOSFET BSG0813NDI RevisionHistory BSG0813NDI Revision:2016-03-24,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2015-03-17 Release of final version 2.1 2016-03-24 Update package drawing TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 15 Rev.2.1,2016-03-24
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