BSG0813NDI Power Block Features

BSG0813NDI Power Block Features
BSG0813NDI
Product Summary
Power Block
Q1
Q2
25
25
V
VGS=10 V
3
1.2
mW
VGS=4.5 V
4
1.7
50
50
Features
• Dual asymmetric N-channel OptiMOS™5 MOSFET
VDS
• Logic level (4.5V rated)
RDS(on),max
• Optimized for high performance buck converters
ID
• Pb-free lead plating; RoHS compliant
S1/D2 (VPhase)
• Qualified according to JEDEC1) for target applications
(5)
Q1
• Halogen-free according to IEC61249-2-21
A
(4)
D1 (Vin)
(9)
S1/D2 (VPhase)
(6)
(3)
D1 (Vin)
S1/D2 (VPhase)
(7)
(2)
S1 (VPhase)
(1)
G1 (GHS)
Q2
• Monolithic integrated Schottky like diode
G2 (GLS)
(8)
(10)
S2 (GND)
Top view
Type
Package
BSG0813NDI
Marking
PG-TISON8-4
0813NDI
Maximum ratings, at Tj=25°C, unless otherwise specified 2)
Parameter
Value
Symbol Conditions
Unit
Q1
Q2
T C=70 °C, V GS=10 V
50
50
T C=70 °C, V GS=4.5 V
50
50
31
50
V GS=4.5 V4)
19
33
I D,pulse
T C=70 °C
160
160
Avalanche energy, single pulse
E AS
Q1: I D=10 A,
Q2: I D=20 A,
R GS=25 W
30
90
Gate source voltage
V GS
T j=25 °C
Power dissipation
P tot
T A=25 °C3)
6.25
6.25
T A=25 °C4)
2.5
2.5
Continuous drain current
ID
T A=25 °C,
V GS=4.5 V3)
T A=25 °C,
Pulsed drain current
Operating and storage temperature
T j, T stg
mJ
V
-55 ... 150
W
°C
55/150/56
IEC climatic category; DIN IEC 68-1
1)
±16
A
J-STD20 and JESD22
Rev.2.1
page 1
2016-03-08
BSG0813NDI
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction case
Q1 R thJC
-
-
4.3
Q2
-
-
2.2
Thermal resistance, junction ambient2)
Q1 R thJA
Application specific
board3)
-
-
20
6 cm2 cooling area4)
-
-
50
V (BR)DSS V GS=0 V, I D=1 mA
256)
-
-
V
Breakdown voltage temperature
coefficient
Q1 dV (BR)DSS I D=10 mA, referenced
to 25 °C
Q2 /dT j
-
15
-
mV/K
Gate threshold voltage
Q1
V DS=V GS, I D=250 µA
1.2
1.6
2
V
V DS=25 V, V GS=0 V,
T j=25 °C
-
-
1
µA
-
-
500
V DS=20 V, V GS=0 V,
T j=125 °C
-
-
100
-
1
-
mA
V GS=16 V, V DS=0 V
-
-
100
nA
-
3.2
4.0
mW
-
1.2
1.7
-
2.4
3.0
Q2
-
0.9
1.2
Q1 R G
-
0.7
1.2
Q2
-
1
1.7
46
93
-
70
140
-
Q2
Q1
Q2
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Q1
Q2
V GS(th)
Q2
Zero gate voltage drain current
Q1 I DSS
Q2
Q1
Q2
Gate-source leakage current
Q1 I GSS
Q2
Drain-source on-state
resistance
Q1 R DS(on)
V GS=4.5 V, I D=20 A
Q2
Q1
V GS=10 V, I D=20 A
Gate resistance
Transconductance
Q1 g fs
Q2
2)
|V DS|>2|I D|R DS(on)max,
I D=20 A
W
S
Only one of both transistors active
Rev.2.1
page 2
2016-03-08
BSG0813NDI
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
Q1 C iss
-
780
1100
Q2
-
2200
2900
-
390
520
-
1300
1700
Q1 Crss
-
38
-
Q2
-
71
-
Q1 t d(on)
-
4.3
-
Q2
-
3.6
-
-
4.7
-
-
2.8
-
-
4.3
-
Q2
-
5.7
-
Q1 t f
-
1.4
-
Q2
-
1.7
-
Q1 Q gs
-
2.0
Gate to drain charge
Q gd
-
1.4
-
Gate charge total
Qg
-
5.6
8.4
Gate plateau voltage
V plateau
-
2.6
-
V
-
5.2
-
nC
Dynamic characteristics
Input capacitance
Output capacitance
Q1 C oss
Q2
Reverse transfer capacitance
Turn-on delay time
Rise time
Q1 t r
Q2
Turn-off delay time
Fall time
Q1 t d(off)
V GS=0 V,
V DS= 12 V, f =1 MHz
V IN=12 V,
V DRV=5 V,
F SW=500 KHz,
I OUT=20 A
5)
pF
ns
Gate Charge Characteristics
Gate to source charge
Gate to source charge
Q2 Q gs
V DD=12 V,
I D=20 A,
V GS=0 to 4.5 V
nC
Gate to drain charge
Q gd
-
3.1
-
Gate charge total
Qg
-
15
22
Gate plateau voltage
V plateau
-
2.3
-
V
-
8
-
nC
-
27
-
Output charge
Q1 Q oss
V DD=12 V, V GS=0 V
Q2
3)
8 Layers copper 70μm thickness. PCB in still air
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 μm thick) copper area for drain
connection. PCB is vertical in still air.
4)
Rev.2.1
page 3
2016-03-08
BSG0813NDI
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
29
-
-
50
Q1 I S,pulse
-
-
160
Q2
-
-
160
Reverse Diode
Diode continuous forward current Q1 I
S
Q2
A
T C=25 °C
Diode pulse current
Diode forward voltage
Reverse recovery charge
Q1 V SD
V GS=0 V, I F=20 A,
T j=25 °C
-
0.82
1
Q2
V GS=0 V, I F=11 A,
T j=25 °C
-
0.52
0.7
V R=12 V, I F=I S,
di F/dt =100 A/µs
-
10
-
Q1 Q rr
Q2
V
nC
5)
For more information see application note n° TBD
The device can withstand a pulse of not more than 30 V for a duration of up to 2 ns at a frequency of 600 kHz
with maximum buck converter input voltage V IN=16 V
6)
Rev.2.1
page 4
2016-03-08
BSG0813NDI
1 Power dissipation (Q1)
P tot=f(T A)4)
3
3
2.5
2.5
2
2
Ptot [W]
Ptot [W]
P tot=f(T A)
2 Power dissipation (Q2)
4)
1.5
1.5
1
1
0.5
0.5
0
0
0
40
80
120
160
0
40
TA [°C]
4 Drain current (Q2)
I D=f(T C)
I D=f(T C)
parameter: V GS≥10 V
parameter: V GS≥10 V
60
60
50
50
40
40
ID [A]
ID [A]
120
160
120
160
TA [°C]
3 Drain current (Q1)
30
30
20
20
10
10
0
0
0
40
80
120
160
TC [°C]
Rev.2.1
80
0
40
80
TC [°C]
page 5
2016-03-08
BSG0813NDI
5 Safe operating area (Q1)
6 Safe operating area (Q2)
I D=f(V DS); T C=25 °C; D =0
I D=f(V DS); T C=25 °C; D =0
parameter: t p
parameter: t p
103
103
1 µs
102
1 µs
10 µs
102
10 µs
100 µs
100 µs
1 ms
ID [A]
ID [A]
1 ms
101
10 ms
10 ms
101
DC
DC
100
100
10-1
10-1
10-1
100
101
102
10-1
100
VDS [V]
101
102
VDS [V]
7 Max. transient thermal impedance (Q1)
8 Max. transient thermal impedance (Q2)
Z thJC=f(t p)
Z thJC=f(t p)
parameter: D =t p/T
parameter: D =t p/T
101
101
0.5
100
ZthJC [K/W]
ZthJC [K/W]
0.5
0.2
100
0.1
0.2
0.1
0.05
0.02
0.05
0.01
10-1
0.02
single pulse
0.01
single pulse
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
tp [s]
Rev.2.1
10-5
10-4
10-3
10-2
10-1
100
tp [s]
page 6
2016-03-08
BSG0813NDI
9 Typ. output characteristics (Q1)
10 Typ. output characteristics (Q2)
I D=f(V DS); T j=25 °C
I D=f(V DS); T j=25 °C
parameter: V GS
parameter: V GS
160
400
4V
10 V
10 V
3.5 V
3.3 V
4.5 V
4V
3.5 V
4.5 V
120
3.3 V
300
ID [A]
ID [A]
3V
80
200
3V
2.8 V
2.8 V
40
100
0
0
0
1
2
3
0
1
VDS [V]
2
3
VDS [V]
11 Typ. drain-source on resistance (Q1)
12 Typ. drain-source on resistance (Q2)
R DS(on)=f(I D); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
10
3
2.5
8
3V
3V
RDS(on) [mW]
RDS(on) [mW]
2
6
3.3 V
3.5 V
4
4V
4.5 V
5V
3.3 V
3.5 V
1.5
4V
4.5 V
5V
1
10 V
10 V
2
0.5
0
0
0
20
40
60
80
ID [A]
Rev.2.1
0
20
40
60
80
ID [A]
page 7
2016-03-08
BSG0813NDI
I D=f(V GS); |V DS |>2 | I D| R DS(on)max
I D=f(V GS); |V DS |>2 | I D| R DS(on)max
parameter: T j
parameter: T j
160
400
120
300
ID [A]
14 Typ. transfer characteristics (Q2)
ID [A]
13 Typ. transfer characteristics (Q1)
80
40
200
100
150 °C
25 °C
150 °C
25 °C
0
0
0
1
2
3
0
4
1
2
VGS [V]
3
4
VGS [V]
15 Drain-source on-state resistance (Q1)
16 Drain-source on-state resistance (Q2)
R DS(on)=f(T j); I D=20 A; V GS=10 V
R DS(on)=f(T j); I D=20 A; V GS=10 V
2
7
6
1.5
RDS(on) [mW]
RDS(on) [mW]
5
4
3
typ
1
typ
2
0.5
1
0
0
-60
-20
20
60
100
140
180
Tj [°C]
Rev.2.1
-60
-20
20
60
100
140
180
Tj [°C]
page 8
2016-03-08
BSG0813NDI
18 Typ. gate threshold voltage (Q2)
V GS(th)=f(T j); V GS=V DS; I D=250 µA
V GS(th)=f(T j); V GS=V DS; I D=10 mA
2.8
2.8
2.4
2.4
2
2
1.6
1.6
VGS(th) [V]
VGS(th) [V]
17 Typ. gate threshold voltage (Q1)
1.2
1.2
0.8
0.8
0.4
0.4
0
0
-60
-20
20
60
100
140
180
-60
-20
20
Tj [°C]
60
100
140
180
Tj [°C]
19 Typ. capacitances (Q1)
20 Typ. capacitances (Q2)
C =f(V DS); V GS=0 V; f =1 MHz
C =f(V DS); V GS=0 V; f =1 MHz
104
104
Ciss
Ciss
103
103
Coss
C [pF]
C [pF]
Coss
102
Crss
102
Crss
101
100
101
0
5
10
15
20
25
VDS [V]
Rev.2.1
0
5
10
15
20
25
VDS [V]
page 9
2016-03-08
BSG0813NDI
21 Forward characteristics of reverse diode (Q1)
22 Forward characteristics of reverse diode (Q2)
I F=f(V SD)
I F=f(V SD)
parameter: T j
parameter: T j
103
103
102
102
150 °C
25 °C
IF [A]
101
IF [A]
101
100
100
-55 °C
25 °C
10-1
150 °C
10-1
100 °C
10-2
10-2
0
0.4
0.8
1.2
0
0.4
VSD [V]
0.8
1.2
VSD [V]
23 Avalanche characteristics (Q1)
24 Avalanche characteristics (Q2)
I AS=f(t AV); R GS=25 W
I AS=f(t AV); R GS=25 W
parameter: T j(start)
parameter: T j(start)
102
102
IAV [A]
IAV [A]
25 °C
25 °C
101
100 °C
125 °C
100 °C
101
125 °C
100
100
100
101
102
103
tAV [µs]
Rev.2.1
100
101
102
103
tAV [µs]
page 10
2016-03-08
BSG0813NDI
25 Typ. gate charge (Q1)
26 Typ. gate charge (Q2)
V GS=f(Q gate); I D=20 A pulsed
V GS=f(Q gate); I D=20 A pulsed
parameter: V DD
parameter: V DD
10
10
8
8
12 V
12 V
5V
20 V
20 V
5V
VGS [V]
6
VGS [V]
6
4
4
2
2
0
0
0
2
4
6
8
10
12
14
0
10
Qgate [nC]
20
30
Qgate [nC]
27 Drain-source breakdown voltage (Q1)
28 Typ. drain-source leakage current (Q2)
V BR(DSS)=f(T j); I D=1 mA
I DSS=f(V DS ); V GS=0 V
parameter: T j
28
10-2
27
26
10-3
125 °C
IDSS [A]
VBR(DSS) [V]
25
24
100 °C
10-4
75 °C
23
10-5
22
21
-60
-20
20
60
100
140
180
0
5
10
15
20
VDS [V]
Tj [°C]
Rev.2.1
25 °C
10-6
20
page 11
2016-03-08
BSG0813NDI
Package Outline
PG-TISON8-4
Rev.2.1
page 12
2016-03-08
BSG0813NDI
Boardpads & Apertures
PG-TISON8-4
All the dimensions in mm
Rev.2.1
page 13
2016-03-08
25VOptiMOSª5PowerMOSFET
BSG0813NDI
RevisionHistory
BSG0813NDI
Revision:2016-03-24,Rev.2.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2015-03-17
Release of final version
2.1
2016-03-24
Update package drawing
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AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,
EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,
ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,
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TrademarksupdatedAugust2015
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©2016InfineonTechnologiesAG
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LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
15
Rev.2.1,2016-03-24
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