MOSFET IPB009N03LG OptiMOS 3Power-Transistor,30V

MOSFET IPB009N03LG OptiMOS 3Power-Transistor,30V
IPB009N03LG
MOSFET
OptiMOSª3Power-Transistor,30V
D²-PAK7pin
Features
•MOSFETforORingandUninterruptiblePowerSupply
•QualifiedaccordingtoJEDEC1)fortargetapplications
•N-channel
•Logiclevel
•Ultra-lowon-resistanceRDS(on)
•100%Avalanchetested
•Pb-freeplating;RoHScompliant
tab
1
7
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
30
V
RDS(on),max
0.95
mΩ
ID
180
A
Drain
Pin 4, tab
Gate
Pin 1
Source
Pin 2,3,5,6,7
Type/OrderingCode
Package
Marking
RelatedLinks
IPB009N03L G
PG-TO263-7
009N03L
-
1)
J-STD20 and JESD22
Final Data Sheet
1
Rev.2.0,2016-04-21
OptiMOSª3Power-Transistor,30V
IPB009N03LG
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.2.0,2016-04-21
OptiMOSª3Power-Transistor,30V
IPB009N03LG
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Values
Unit
Note/TestCondition
180
180
180
180
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=4.5V,TC=25°C
VGS=4.5V,TC=100°C
-
1260
A
TC=25°C
-
-
100
A
TC=25°C
EAS
-
-
610
mJ
ID=100A,RGS=25Ω
Reversediodedv/dt
dv/dt
-
-
6
kV/µs
ID=180A,VDS=24V,di/dt=200A/µs,
Tj,max=175°C
Gate source voltage
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
250
W
TC=25°C
Operating and storage temperature
Tj,Tstg
-55
-
175
°C
IEC climatic category;
DIN IEC 68-1: 55/175/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
ID,pulse
-
Avalanche current, single pulse
IAS
Avalanche energy, single pulse
Continuous drain current
Pulsed drain current1)
2)
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case
Values
Min.
Typ.
Max.
RthJC
-
-
0.6
K/W
-
SMD version, device on PCB,
minimal footprint
RthJA
-
-
62
K/W
-
SMD version, device on PCB,
6 cm² cooling area3)
RthJA
-
-
40
K/W
-
1)
See Diagram 3 for more detailed information
See Diagram 13 for more detailed information
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
2)
Final Data Sheet
3
Rev.2.0,2016-04-21
OptiMOSª3Power-Transistor,30V
IPB009N03LG
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
-
2.2
V
VDS=VGS,ID=250µA
-
0.1
20
2
200
µA
VDS=30V,VGS=0V,Tj=25°C
VDS=30V,VGS=0V,Tj=125°C
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
0.95
0.7
1.3
0.95
mΩ
VGS=4.5V,ID=100A
VGS=10V,ID=100A
Gate resistance
RG
-
1.5
-
Ω
-
Transconductance
gfs
180
370
-
S
|VDS|>2|ID|RDS(on)max,ID=100A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
30
-
Gate threshold voltage
VGS(th)
1
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Values
Min.
Typ.
Max.
Ciss
-
19000 25000 pF
VGS=0V,VDS=15V,f=1MHz
Output capacitance
Coss
-
5700
7600
pF
VGS=0V,VDS=15V,f=1MHz
Reverse transfer capacitance
Crss
-
360
-
pF
VGS=0V,VDS=15V,f=1MHz
Turn-on delay time
td(on)
-
26
-
ns
VDD=15V,VGS=10V,ID=100A,
RG,ext=1.6Ω
Rise time
tr
-
14
-
ns
VDD=15V,VGS=10V,ID=100A,
RG,ext=1.6Ω
Turn-off delay time
td(off)
-
103
-
ns
VDD=15V,VGS=10V,ID=100A,
RG,ext=1.6Ω
Fall time
tf
-
22
-
ns
VDD=15V,VGS=10V,ID=100A,
RG,ext=1.6Ω
Unit
Note/TestCondition
Table6Gatechargecharacteristics1)
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
-
50
-
nC
VDD=15V,ID=100A,VGS=0to4.5V
Gate charge at threshold
Qg(th)
-
28
-
nC
VDD=15V,ID=100A,VGS=0to4.5V
Gate to drain charge
Qgd
-
24
-
nC
VDD=15V,ID=100A,VGS=0to4.5V
Switching charge
Qsw
-
46
-
nC
VDD=15V,ID=100A,VGS=0to4.5V
Gate charge total
Qg
-
110
146
nC
VDD=15V,ID=100A,VGS=0to4.5V
Gate plateau voltage
Vplateau
-
2.9
-
V
VDD=15V,ID=100A,VGS=0to4.5V
Gate charge total
Qg
-
227
-
nC
VDD=15V,ID=100A,VGS=0to10V
Gate charge total, sync. FET
Qg(sync)
-
95
-
nC
VDS=0.1V,VGS=0to4.5V
Output charge
Qoss
-
148
-
nC
VDD=15V,VGS=0V
1)
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.2.0,2016-04-21
OptiMOSª3Power-Transistor,30V
IPB009N03LG
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Values
Unit
Note/TestCondition
180
A
TC=25°C
-
1260
A
TC=25°C
-
0.82
1
V
VGS=0V,IF=100A,Tj=25°C
-
135
-
nC
VR=15V,IF=IS,diF/dt=400A/µs
Min.
Typ.
Max.
IS
-
-
Diode pulse current
IS,pulse
-
Diode forward voltage
VSD
Reverse recovery charge
Qrr
Final Data Sheet
5
Rev.2.0,2016-04-21
OptiMOSª3Power-Transistor,30V
IPB009N03LG
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
300
200
250
160
200
ID[A]
Ptot[W]
120
150
80
100
40
50
0
0
50
100
150
0
200
0
50
100
TC[°C]
150
200
TC[°C]
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
4
100
10
0.5
1 µs
103
10 µs
10-1
0.2
102
0.1
ZthJC[K/W]
ID[A]
100 µs
DC
1 ms
0.05
0.02
10
0.01
10 ms
101
100
10-1
-2
single pulse
100
101
102
10-3
10-6
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
6
Rev.2.0,2016-04-21
OptiMOSª3Power-Transistor,30V
IPB009N03LG
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
1000
2.0
5V
10 V
800
3.2 V
1.6
4.5 V
3.5 V
4V
ID[A]
RDS(on)[mΩ]
600
400
3.5 V
1.2
4V
4.5 V
5V
0.8
6V
10 V
3.2 V
200
0.4
3V
2.8 V
0
0
1
2
0.0
3
0
40
80
VDS[V]
120
160
200
160
200
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
500
800
400
600
300
ID[A]
gfs[S]
1000
400
200
200
100
175 °C
25 °C
0
0
1
2
3
4
5
0
0
VGS[V]
80
120
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
40
gfs=f(ID);Tj=25°C
7
Rev.2.0,2016-04-21
OptiMOSª3Power-Transistor,30V
IPB009N03LG
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
1.80
2.5
1.60
2.0
1.40
1.5
98 %
1.00
0.80
VGS(th)[V]
RDS(on)[mΩ]
1.20
typ
1.0
0.60
0.40
0.5
0.20
0.00
-60
-20
20
60
100
140
0.0
-60
180
-20
20
Tj[°C]
60
100
140
180
Tj[°C]
RDS(on)=f(Tj);ID=100A;VGS=10V
VGS(th)=f(Tj);VGS=VDS;ID=1mA
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
5
104
10
25 °C
175 °C
25 °C, 98%
175 °C, 98%
103
Ciss
104
IF[A]
C[pF]
Coss
102
103
101
Crss
102
0
10
20
30
100
0.0
0.5
VDS[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
1.0
1.5
2.0
VSD[V]
IF=f(VSD);parameter:Tj
8
Rev.2.0,2016-04-21
OptiMOSª3Power-Transistor,30V
IPB009N03LG
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
3
10
12
15 V
6V
10
24 V
102
8
150 °C
IAV[A]
VGS[V]
100 °C
25 °C
101
6
4
2
100
100
101
102
103
0
0
50
tAV[µs]
100
150
200
250
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=100Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Gate charge waveforms
34
33
VBR(DSS)[V]
32
31
30
29
28
-60
-20
20
60
100
140
180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
9
Rev.2.0,2016-04-21
OptiMOSª3Power-Transistor,30V
IPB009N03LG
5PackageOutlines
Figure1OutlinePG-TO263-7,dimensionsinmm/inches
Final Data Sheet
10
Rev.2.0,2016-04-21
OptiMOSª3Power-Transistor,30V
IPB009N03LG
RevisionHistory
IPB009N03L G
Revision:2016-04-21,Rev.2.0
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2016-04-21
Release of final version
TrademarksofInfineonTechnologiesAG
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ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,
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TrademarksupdatedAugust2015
OtherTrademarks
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©2016InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
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Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
11
Rev.2.0,2016-04-21
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