MOSFET DataSheet OptiMOS PowerManagement&Multimarket

MOSFET DataSheet OptiMOS PowerManagement&Multimarket
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTMPower-MOSFET,30V
IPT004N03L
DataSheet
Rev.2.0
Final
PowerManagement&Multimarket
OptiMOSTMPower-MOSFET,30V
IPT004N03L
1Description
HSOF
Features
Tab
•Optimizedfore-fuseandORingapplication
•Verylowon-resistanceRDS(on)@VGS=4.5V
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
12
34
56
78
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
30
V
RDS(on),max
0.4
mΩ
ID
300
A
QOSS
141
nC
QG(0V..10V)
252
nC
Drain
Tab
Gate
Pin 1
Source
Pin 2-8
Type/OrderingCode
Package
Marking
RelatedLinks
IPT004N03L
PG-HSOF-8-1
004N03L
-
1)
J-STD20 and JESD22
Final Data Sheet
2
Rev.2.0,2014-10-08
OptiMOSTMPower-MOSFET,30V
IPT004N03L
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
3
Rev.2.0,2014-10-08
OptiMOSTMPower-MOSFET,30V
IPT004N03L
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
at 25 °C
Parameter
Symbol
Values
Unit
Note/TestCondition
300
300
300
300
72
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=4.5V,TC=25°C
VGS=4.5V,TC=100°C
VGS=10V,TA=25°C,RthJA=40K/W1)
Min.
Typ.
Max.
-
Continuous drain current
ID
-
Pulsed drain current2)
ID,pulse
-
-
1200
A
TC=25°C
Avalanche energy, single pulse3)
EAS
-
-
830
mJ
ID=150A
Gate source voltage
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
300
3.8
W
TC=25°C
TA=25°C,RthJA=40K/W1)
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
IEC climatic category; DIN IEC 68-1:
55/150/56
Unit
Note/TestCondition
3Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case
Device on PCB
Values
Min.
Typ.
Max.
RthJC
-
-
0.5
K/W
-
RthJA
-
-
40
62
K/W
6 cm² cooling area1)
minimum footprint
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
Final Data Sheet
4
Rev.2.0,2014-10-08
OptiMOSTMPower-MOSFET,30V
IPT004N03L
4Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=10mA
-
2.2
V
VDS=VGS,ID=250µA
-
0.1
10
10
100
µA
VDS=30V,VGS=0V,Tj=25°C
VDS=30V,VGS=0V,Tj=125°C
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
0.44
0.37
0.5
0.4
mΩ
VGS=4.5V,ID=150A
VGS=10V,ID=150A
Gate resistance
RG
1.4
2.7
5.4
Ω
-
Transconductance
gfs
160
320
-
S
|VDS|>2|ID|RDS(on)max,ID=30A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
30
-
Gate threshold voltage
VGS(th)
0.7
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Values
Min.
Typ.
Max.
Ciss
-
18000 24000 pF
VGS=0V,VDS=15V,f=1MHz
Output capacitance
Coss
-
5400
7200
pF
VGS=0V,VDS=15V,f=1MHz
Reverse transfer capacitance
Crss
-
590
-
pF
VGS=0V,VDS=15V,f=1MHz
Turn-on delay time
td(on)
-
30
-
ns
VDD=15V,VGS=10V,ID=30A,
RG,ext=1.6Ω
Rise time
tr
-
17
-
ns
VDD=15V,VGS=10V,ID=30A,
RG,ext=1.6Ω
Turn-off delay time
td(off)
-
149
-
ns
VDD=15V,VGS=10V,ID=30A,
RG,ext=1.6Ω
Fall time
tf
-
37
-
ns
VDD=15V,VGS=10V,ID=30A,
RG,ext=1.6Ω
Unit
Note/TestCondition
Table6Gatechargecharacteristics1)
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
-
40
53
nC
VDD=15V,ID=30A,VGS=0to4.5V
Gate charge at threshold
Qg(th)
-
29
-
nC
VDD=15V,ID=30A,VGS=0to4.5V
Gate to drain charge
Qgd
-
28
36
nC
VDD=15V,ID=30A,VGS=0to4.5V
Switching charge
Qsw
-
38
-
nC
VDD=15V,ID=30A,VGS=0to4.5V
Gate charge total
Qg
-
122
163
nC
VDD=15V,ID=30A,VGS=0to4.5V
Gate plateau voltage
Vplateau
-
2.2
-
V
VDD=15V,ID=30A,VGS=0to4.5V
Gate charge total
Qg
-
252
336
nC
VDD=15V,ID=30A,VGS=0to10V
Gate charge total, sync. FET
Qg(sync)
-
105
-
nC
VDS=0.1V,VGS=0to4.5V
Output charge
Qoss
-
141
188
nC
VDD=15V,VGS=0V
1)
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
5
Rev.2.0,2014-10-08
OptiMOSTMPower-MOSFET,30V
IPT004N03L
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Values
Unit
Note/TestCondition
300
A
TC=25°C
-
1200
A
TC=25°C
-
0.83
1
V
VGS=0V,IF=150A,Tj=25°C
-
100
-
nC
VR=15V,IF=100A,diF/dt=400A/µs
Min.
Typ.
Max.
IS
-
-
Diode pulse current
IS,pulse
-
Diode forward voltage
VSD
Reverse recovery charge
Qrr
Final Data Sheet
6
Rev.2.0,2014-10-08
OptiMOSTMPower-MOSFET,30V
IPT004N03L
5Electricalcharacteristicsdiagrams
Diagram2:Draincurrent
350
350
300
300
250
250
200
200
ID[A]
Ptot[W]
Diagram1:Powerdissipation
150
150
100
100
50
50
0
0
40
80
120
160
0
200
0
40
80
TC[°C]
120
160
200
TC[°C]
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
4
101
10
1 µs
103
10 µs
100 µs
100
1 ms
102
ZthJC[K/W]
ID[A]
10 ms
DC
101
0.5
10-1
0.2
0.1
0.05
10-2
0
10
0.02
0.01
single pulse
10-1
10-1
100
101
102
10-3
10-6
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
7
Rev.2.0,2014-10-08
OptiMOSTMPower-MOSFET,30V
IPT004N03L
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
1200
0.6
10 V
3.2 V
4.5 V
4V
5V
1000
3.5 V
4V
4.5 V
5V
800
0.4
RDS(on)[mΩ]
ID[A]
3V
600
2.8 V
400
7V
8V
10 V
0.3
0.2
200
0
3.5 V
0.5
3.2 V
0.1
0
1
2
0.0
3
0
100
200
VDS[V]
300
400
500
600
700
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
1200
800
700
1000
600
800
gfs[S]
ID[A]
500
600
400
300
400
175 °C
200
200
25 °C
100
0
0
1
2
3
4
5
0
0
VGS[V]
80
120
160
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
40
gfs=f(ID);Tj=25°C
8
Rev.2.0,2014-10-08
OptiMOSTMPower-MOSFET,30V
IPT004N03L
Diagram10:Typ.gatethresholdvoltage
1.0
2.5
0.8
2.0
0.6
1.5
0.4
VGS(th)[V]
RDS(on)[mΩ]
Diagram9:Drain-sourceon-stateresistance
typ
0.2
1 mA
1.0
0.5
0.0
-60
-20
20
60
100
140
0.0
-60
180
-20
20
Tj[°C]
60
100
140
180
Tj[°C]
RDS(on)=f(Tj);ID=150A;VGS=10V
VGS(th)=f(Tj);VGS=VDS;ID=1mA
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
5
104
10
103
Ciss
IF[A]
C[pF]
104
Coss
102
25 °C
103
175 °C
10
1
Crss
102
0
5
10
15
20
25
100
0.0
VDS[V]
1.0
1.5
VSD[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
0.5
IF=f(VSD);parameter:Tj
9
Rev.2.0,2014-10-08
OptiMOSTMPower-MOSFET,30V
IPT004N03L
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
103
12
15 V
10
102
24 V
8
25 °C
100 °C
VGS[V]
125 °C
IAV[A]
6V
101
6
4
2
100
100
101
102
103
0
0
50
tAV[µs]
100
150
200
250
300
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=30Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Gate charge waveforms
34
32
VBR(DSS)[V]
30
28
26
24
22
20
-60
-20
20
60
100
140
180
Tj[°C]
VBR(DSS)=f(Tj);ID=10mA
Final Data Sheet
10
Rev.2.0,2014-10-08
OptiMOSTMPower-MOSFET,30V
IPT004N03L
6PackageOutlines
1) partially covered with Mold Flash
DIM
A
b
b1
b2
c
D
D2
E
E1
E4
E5
e
H
H1
H2
H3
H4
N
K1
L
L1
L2
L4
MILLIMETERS
MIN
MAX
2.20
2.40
0.70
0.90
9.70
9.90
0.42
0.50
0.40
0.60
10.28
10.58
3.30
9.70
10.10
7.50
8.50
9.46
1.20 (BSC)
11.48
6.55
11.88
6.75
INCHES
MIN
0.087
0.028
0.382
0.017
0.016
0.405
0.295
0.335
0.372
0.047 (BSC)
0.452
0.258
2
0
2
4mm
EUROPEAN PROJECTION
0.083
ISSUE DATE
20-02-2014
0.051
REVISION
02
0.028
0.024
1.30
0
SCALE
0.468
0.266
0.063
0.70
0.60
1.00
0.398
0.281
0.141
0.128
8
0.165
2.10
DOCUMENT NO.
Z8B00169619
0.130
0.382
7.15
3.59
3.26
8
4.18
1.60
MAX
0.094
0.035
0.390
0.020
0.024
0.416
0.039
Figure1OutlinePG-HSOF-8-1
Final Data Sheet
11
Rev.2.0,2014-10-08
OptiMOSTMPower-MOSFET,30V
IPT004N03L
RevisionHistory
IPT004N03L
Revision:2014-10-08,Rev.2.0
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2014-10-08
Release of final version
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InfineonTechnologiesAG
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©2014InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
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Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
12
Rev.2.0,2014-10-08
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