SIPMOS Power Transistor  V

SIPMOS Power Transistor  V
SPD 07N20 G
SIPMOS Power Transistor
Features
Product Summary
• N channel
Drain source voltage
VDS
200
V
•
Drain-Source on-state resistance
RDS(on)
0.4
Ω
Continuous drain current
ID
7
A
Enhancement mode
• Avalanche rated
• dv/dt rated
2
1
1
2
3
3
Pin 1
Type
Package
Pb-free
Packaging
SPD07N20 G
PG-TO252
Yes
Tape and Reel
SPU07N20 G
PG-TO251
Yes
Tube
Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified
Symbol
Parameter
Continuous drain current
G
Value
Pin 2 Pin 3
S
D
Unit
A
ID
TC = 25 ˚C
7
TC = 100 ˚C
4.5
IDpulse
28
EAS
120
EAR
4
dv/dt
6
Gate source voltage
VGS
±20
V
Power dissipation
Ptot
40
W
-55... +175
˚C
Pulsed drain current
TC = 25 ˚C
Avalanche energy, single pulse
mJ
ID = 7 A, VDD = 50 V, RGS = 25 Ω
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt
kV/µs
IS = 7 A, V DS = 160 V, di/dt = 200 A/µs,
Tjmax = 175 ˚C
TC = 25 ˚C
Operating and storage temperature
Tj , Tstg
IEC climatic category; DIN IEC 68-1
Rev. 2.5
55/150/56
Page 1
2013-06-27
SPD 07N20 G
Thermal Characteristics
Symbol
Parameter
Unit
Values
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
RthJC
-
Thermal resistance, junction - ambient, leded
RthJA
-
-
100
SMD version, device on PCB:
RthJA
@ min. footprint
-
-
75
@ 6 cm 2 cooling area1)
-
-
50
K/W
3.1
Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified
Values
Symbol
Parameter
Unit
min.
typ.
max.
V(BR)DSS
200
-
-
VGS(th)
2.1
3
4
Static Characteristics
Drain- source breakdown voltage
V
VGS = 0 V, ID = 0.25 mA
Gate threshold voltage, VGS = VDS
ID = 1 mA
Zero gate voltage drain current
µA
IDSS
VDS = 200 V, VGS = 0 V, Tj = 25 ˚C
-
0.1
1
VDS = 200 V, VGS = 0 V, Tj = 125 ˚C
-
-
100
-
10
100
Gate-source leakage current
IGSS
nA
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
Ω
RDS(on)
VGS = 10 V, ID = 4.5 A
-
0.3
0.4
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev. 2.5
Page 2
2013-06-27
SPD 07N20 G
Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified
Values
Symbol
Parameter
Unit
min.
typ.
max.
g fs
3
4.2
-
S
Ciss
-
400
530
pF
Coss
-
85
130
Crss
-
45
70
td(on)
-
10
15
tr
-
40
60
td(off)
-
55
75
tf
-
30
40
Dynamic Characteristics
Transconductance
VDS≥2*ID*RDS(on)max , ID = 4.5 A
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
ns
VDD = 30 V, VGS = 10 V, ID = 3 A,
RG = 50 Ω
Rise time
VDD = 30 V, VGS = 10 V, ID = 3 A,
RG = 50 Ω
Turn-off delay time
VDD = 30 V, VGS = 10 V, ID = 3 A,
RG = 50 Ω
Fall time
VDD = 30 V, VGS = 10 V, ID = 3 A,
RG = 50 Ω
Rev. 2.5
Page 3
2013-06-27
SPD 07N20 G
Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified
Values
Symbol
Parameter
Unit
min.
typ.
max.
Qgs
-
5
7.5
Qgd
-
10
22.5
Qg
-
21
31.5
V(plateau)
-
7
-
V
IS
-
-
7
A
I SM
-
-
28
VSD
-
1.3
1.7
V
t rr
-
200
300
ns
Q rr
-
0.6
0.9
µC
Dynamic Characteristics
Gate to source charge
nC
VDD = 160 V, ID = 7 A
Gate to drain charge
VDD = 160 V, ID = 7 A
Gate charge total
VDD = 160 V, ID = 7 A, V GS = 0 to 10 V
Gate plateau voltage
VDD = 160 V, ID = 7 A
Reverse Diode
Inverse diode continuous forward current
TC = 25 ˚C
Inverse diode direct current,pulsed
TC = 25 ˚C
Inverse diode forward voltage
VGS = 0 V, I F = 14 A
Reverse recovery time
VR = 100 V, I F=IS , diF/dt = 100 A/µs
Reverse recovery charge
VR = 100 V, I F=lS , di F/dt = 100 A/µs
Rev. 2.5
Page 4
2013-06-27
SPD 07N20 G
Power Dissipation
Drain current
Ptot = f (TC)
ID = f (TC )
parameter: VGS ≥ 10 V
SPD07N20
SPD07N20
45
7.5
A
W
6.0
35
5.0
ID
Ptot
5.5
30
25
4.5
4.0
3.5
20
3.0
15
2.5
2.0
10
1.5
1.0
5
0.5
0
0
60
40
20
80
120
100
˚C
0.0
0
160
40
20
80
60
120
100
160
TC
TC
Safe operating area
Transient thermal impedance
I D = f (V DS)
ZthJC = f (tp )
parameter : D = 0 , T C = 25 ˚C
parameter : D = tp /T
10 2
˚C
10 1
SPD07N20
SPD07N20
K/W
A
/I
D
tp = 22.0 µs
V
DS
10 0
Z thJC
=
100 µs
R
ID
DS
(o
n)
10 1
10 -1
1 ms
D = 0.50
0.20
10
0
0.10
10 ms
0.05
10 -2
0.02
0.01
single pulse
DC
10 -1 0
10
10
1
10
2
V
10
3
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
VDS
Rev. 2.5
10 -3 -7
10
Page 5
2013-06-27
SPD 07N20 G
Typ. output characteristics
Typ. drain-source-on-resistance
I D = f (VDS)
RDS(on) = f (ID)
parameter: tp = 80 µs
parameter: V GS
SPD07N20
17
SPD07N20
Ptot = 40W
1.3
Ω
A
f
VGS [V]
a
14
b
4.5
c
5.0
d
5.5
e
6.0
f
6.5
g
7.0
d h
7.5
ID
12
e
10
8
i
6
c
4
9.0
k
10.0
l
20.0
0.7
0.6
0.5
0.4
0.3
0.2
a
0.1
V
8
6
4
e
d
0.8
2
2
c
0.9
b
0
0
b
1.0
8.0
j
a
1.1
4.0
RDS(on)
l
i j kh g
11
VGS [V] =
a
4.0
0.0
0
VDS
f
h kg
j i
l
b
4.5
c
5.0
d
5.5
e
f
6.0 6.5
h
i
7.5 8.0
8
6
4
2
g
7.0
k
l
10.0 20.0
j
9.0
A
12
ID
Typ. transfer characteristics I D= f (VGS)
Typ. forward transconductance
parameter: tp = 80 µs
VDS ≥ 2 x I D x RDS(on) max
gfs = f(ID ); Tj = 25˚C
parameter: gfs
13
6
A
11
S
10
9
gfs
ID
4
8
7
3
6
5
2
4
3
1
2
1
0
0
1
2
3
4
5
6
7
8
V
0
10
VGS
Rev. 2.5
0
2
4
6
8
10
12
14
16
18 A 21
ID
Page 6
2013-06-27
SPD 07N20 G
Gate threshold voltage
Drain-source on-resistance
VGS(th) = f (Tj)
RDS(on) = f (Tj)
parameter : VGS = V DS, ID = 1 mA
parameter : ID = 4.5 A, VGS = 10 V
SPD07N20
5.0
V
1.8
Ω
4.4
4.0
VGS(th)
RDS(on)
1.4
1.2
3.6
max
3.2
2.8
1.0
2.4
0.8
98%
1.6
0.6
min
typ
1.2
0.4
0.8
0.4
0.2
0.0
-60
typ
2.0
0.0
-60
60
20
-20
100
140
˚C
˚C
100
60
20
-20
200
160
Tj
Tj
Typ. capacitances
Forward characteristics of reverse diode
C = f (VDS)
IF = f (VSD )
parameter: V GS = 0 V, f = 1 MHz
parameter: Tj , tp = 80 µs
10
4
10 2
pF
SPD07N20
A
10 3
C
IF
10 1
C iss
10 2
10 0
C oss
T j = 25 ˚C typ
Tj = 150 ˚C typ
Crss
Tj = 25 ˚C (98%)
Tj = 150 ˚C (98%)
10 1
0
5
10
15
20
25
30
V
40
VDS
Rev. 2.5
Page 7
10 -1
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VSD
2013-06-27
SPD 07N20 G
Avalanche Energy EAS = f (Tj)
Typ. gate charge
parameter: ID = 7 A, VDD = 50 V
RGS = 25 Ω
VGS = f (QGate )
parameter: ID puls = 7 A
SPD07N20
130
16
mJ
V
110
100
12
VGS
EAS
90
80
0,2 VDS max
10
0,8 VDS max
70
8
60
50
6
40
4
30
20
2
10
0
20
40
100
80
60
˚C
120
0
0
160
Tj
4
8
12
16
20
24
28
nC 34
Q Gate
Drain-source breakdown voltage
V(BR)DSS = f (Tj)
SPD07N20
245
V
V(BR)DSS
235
230
225
220
215
210
205
200
195
190
185
180
-60
-20
20
60
100
˚C
180
Tj
Rev. 2.5
Page 8
2013-06-27
SPD 07N20 G
Package outline: PG-TO252-3
Rev. 2.5
Page 9
2013-06-27
SPD 07N20 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.5
Page 10
2013-06-27
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