MOSFET DataSheet OptiMOS PowerManagement&Multimarket

MOSFET DataSheet OptiMOS PowerManagement&Multimarket
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTMPower-MOSFET,25V
BSB008NE2LX
DataSheet
Rev.2.0
Final
PowerManagement&Multimarket
OptiMOSTMPower-MOSFET,25V
BSB008NE2LX
1Description
CanPAKMX-size
Features
•Optimizedfore-fuseandOR-ingapplication
•UltralowRdsoninCanPAK-MXfootprint
•Lowprofile(<0.7mm)
•100%avalanchetested
•100%RgTested
•Double-sidedcooling
•CompatiblewithDirectFET®packageMXfootprintandoutline1)
•QualifiedaccordingtoJEDEC2)fortargetapplications
Table1KeyPerformanceParameters
Unit
VDS
25
V
RDS(on),max
0.8
mΩ
ID
180
A
Qoss
74
nC
Qg(0V..10V)
258
nC
Type/OrderingCode
Package
BSB008NE2LX
MG-WDSON-2
Gate
Source
Marking
04E2
Drain
Value
Drain
Parameter
RelatedLinks
-
1)
CanPAKTM uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a registered
trademark of International Rectifier Corporation.
2)
J-STD20 and JESD22
Final Data Sheet
2
Rev.2.0,2015-01-20
OptiMOSTMPower-MOSFET,25V
BSB008NE2LX
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
3
Rev.2.0,2015-01-20
OptiMOSTMPower-MOSFET,25V
BSB008NE2LX
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current
Values
Unit
Note/TestCondition
180
165
46
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=10V,TA=25°C,RthJA=45K/W
-
400
A
TC=25°C
-
-
40
A
TC=25°C
EAS
-
-
600
mJ
ID=40A,RGS=25Ω
Gate source voltage
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
89
2.8
W
TC=25°C
TA=25°C,RthJA=45K/W
Operating and storage temperature
Tj,Tstg
-40
-
150
°C
IEC climatic category;
DIN IEC 68-1: 40/150/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
ID,pulse
-
Avalanche current, single pulse
IAS
Avalanche energy, single pulse
Pulsed drain current1)
2)
3Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case,
bottom
Values
Min.
Typ.
Max.
RthJC
-
1.0
-
K/W
-
Thermal resistance, junction - case,
top
RthJC
-
-
1.4
K/W
-
Device on PCB,
6 cm2 cooling area3)
RthJA
-
-
45
K/W
-
1)
See figure 3 for more detailed information
See figure 13 for more detailed information
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
2)
Final Data Sheet
4
Rev.2.0,2015-01-20
OptiMOSTMPower-MOSFET,25V
BSB008NE2LX
4Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
-
2
V
VDS=VGS,ID=250µA
-
0.1
10
10
100
µA
VDS=25V,VGS=0V,Tj=25°C
VDS=25V,VGS=0V,Tj=125°C
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
0.75
0.6
1.0
0.8
mΩ
VGS=4.5V,ID=25A
VGS=10V,ID=30A
Gate resistance
RG
0.3
0.5
1.0
Ω
-
Transconductance
gfs
120
240
-
S
|VDS|>2|ID|RDS(on)max,ID=30A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
25
-
Gate threshold voltage
VGS(th)
1.2
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Values
Min.
Typ.
Max.
Ciss
-
12000 16000 pF
VGS=0V,VDS=12V,f=1MHz
Output capacitance
Coss
-
3800
5100
pF
VGS=0V,VDS=12V,f=1MHz
Reverse transfer capacitance
Crss
-
3300
-
pF
VGS=0V,VDS=12V,f=1MHz
Turn-on delay time
td(on)
-
12.6
-
ns
VDD=12V,VGS=10V,ID=30A,
RG,ext=1.6Ω
Rise time
tr
-
47.2
-
ns
VDD=12V,VGS=10V,ID=30A,
RG,ext=1.6Ω
Turn-off delay time
td(off)
-
75
-
ns
VDD=12V,VGS=10V,ID=30A,
RG,ext=1.6Ω
Fall time
tf
-
32.4
-
ns
VDD=12V,VGS=10V,ID=30A,
RG,ext=1.6Ω
Unit
Note/TestCondition
Table6Gatechargecharacteristics1)
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
-
27
36
nC
VDD=12V,ID=30A,VGS=0to4.5V
Gate charge at threshold
Qg(th)
-
19
-
nC
VDD=12V,ID=30A,VGS=0to4.5V
Gate to drain charge
Qgd
-
73
110
nC
VDD=12V,ID=30A,VGS=0to4.5V
Switching charge
Qsw
-
81
-
nC
VDD=12V,ID=30A,VGS=0to4.5V
Gate charge total
Qg
-
146
194
nC
VDD=12V,ID=30A,VGS=0to4.5V
Gate plateau voltage
Vplateau
-
2.2
-
V
VDD=12V,ID=30A,VGS=0to4.5V
Gate charge total
Qg
-
258
343
nC
VDD=12V,ID=30A,VGS=0to10V
Gate charge total, sync. FET
Qg(sync)
-
88
-
nC
VDS=0.1V,VGS=0to4.5V
Output charge
Qoss
-
74
98
nC
VDD=12V,VGS=0V
1)
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
5
Rev.2.0,2015-01-20
OptiMOSTMPower-MOSFET,25V
BSB008NE2LX
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Values
Unit
Note/TestCondition
89
A
TC=25°C
-
400
A
TC=25°C
-
0.78
-
V
VGS=0V,IF=30A,Tj=25°C
-
20
-
nC
VR=15V,IF=IS,diF/dt=400A/µs
Min.
Typ.
Max.
IS
-
-
Diode pulse current
IS,pulse
-
Diode forward voltage
VSD
Reverse recovery charge
Qrr
Final Data Sheet
6
Rev.2.0,2015-01-20
OptiMOSTMPower-MOSFET,25V
BSB008NE2LX
5Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
100
200
90
80
160
70
120
ID[A]
Ptot[W]
60
50
40
80
30
20
40
10
0
0
40
80
120
0
160
0
40
80
TC[°C]
120
160
TC[°C]
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
101
10
1 µs
10 µs
102
100 µs
100
1 ms
0.2
ZthJC[K/W]
10 ms
101
DC
ID[A]
0.5
0
10
0.1
10-1
0.05
0.02
0.01
10-2
single pulse
-1
10
10-2
10-1
100
101
102
10-3
10-6
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
7
Rev.2.0,2015-01-20
OptiMOSTMPower-MOSFET,25V
BSB008NE2LX
Diagram5:Typ.outputcharacteristics
800
Diagram6:Typ.drain-sourceonresistance
1.5
10 V
5V
700
4.5 V
3.2 V
4V
600
3.2 V
1.0
3.5 V
RDS(on)[mΩ]
ID[A]
500
3V
400
300
4V
4.5 V
5V
7V
10 V
0.5
2.8 V
200
100
0
0
1
2
0.0
3
0
10
20
VDS[V]
30
40
50
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
400
600
500
320
400
ID[A]
gfs[S]
240
160
300
150 °C
200
25 °C
80
0
100
0
1
2
3
4
5
0
0
VGS[V]
80
120
160
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
40
gfs=f(ID);Tj=25°C
8
Rev.2.0,2015-01-20
OptiMOSTMPower-MOSFET,25V
BSB008NE2LX
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
2.5
1.2
2.0
1.0
1.5
VGS(th)[V]
RDS(on)[mΩ]
0.8
typ
0.6
1.0
0.4
0.5
0.2
0.0
-40
-20
0
20
40
60
80
100
120
140
0.0
-40
160
-20
0
20
40
Tj[°C]
60
80
100
120
140
Tj[°C]
RDS(on)=f(Tj);ID=30A;VGS=10V
VGS(th)=f(Tj);VGS=VDS;ID=250µA
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
5
103
10
25 °C
150 °C
Ciss
102
C[pF]
104
IF[A]
Coss
Crss
103
102
101
0
5
10
15
20
25
100
0.0
0.5
VDS[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
1.0
1.5
2.0
VSD[V]
IF=f(VSD);parameter:Tj
9
Rev.2.0,2015-01-20
OptiMOSTMPower-MOSFET,25V
BSB008NE2LX
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
102
10
9
8
5V
12 V
7
25 °C
20 V
6
125 °C
VGS[V]
IAV[A]
100 °C
101
5
4
3
2
1
100
100
101
102
103
0
0
50
tAV[µs]
100
150
200
250
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=30Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Gate charge waveforms
28
27
26
VBR(DSS)[V]
25
24
23
22
21
20
-60
-20
20
60
100
140
180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
10
Rev.2.0,2015-01-20
OptiMOSTMPower-MOSFET,25V
BSB008NE2LX
6PackageOutlines
Figure1OutlineMG-WDSON-2,dimensionsinmm/inches
Final Data Sheet
11
Rev.2.0,2015-01-20
OptiMOSTMPower-MOSFET,25V
BSB008NE2LX
Figure2OutlineTapeCanPAKMX,dimensionsinmm
Final Data Sheet
12
Rev.2.0,2015-01-20
OptiMOSTMPower-MOSFET,25V
BSB008NE2LX
Figure3OutlineBoardpadsandaperturesCanPAKMX,dimensionsinmm
Final Data Sheet
13
Rev.2.0,2015-01-20
OptiMOSTMPower-MOSFET,25V
BSB008NE2LX
RevisionHistory
BSB008NE2LX
Revision:2015-01-20,Rev.2.0
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2015-01-20
Release of final version
WeListentoYourComments
Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously
improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to:
[email protected]
Publishedby
InfineonTechnologiesAG
81726München,Germany
©2015InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
14
Rev.2.0,2015-01-20
Was this manual useful for you? yes no
Thank you for your participation!

* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project

Download PDF

advertisement