MOSFET DataSheet OptiMOS

MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTM5Power-MOSFET,25V
BSC026NE2LS5
DataSheet
Rev.2.0
Final
PowerManagement&Multimarket
OptiMOSTM5Power-MOSFET,25V
BSC026NE2LS5
1Description
SuperSO8
8
Features
•Optimizedforhighperformancebuckconverters
•Verylowon-resistanceRDS(on)@VGS=4.5V
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Value
Unit
VDS
25
V
RDS(on),max
2.6
mΩ
ID
82
A
QOSS
7.6
nC
QG(0V..4.5V)
5.6
nC
Type/OrderingCode
Package
BSC026NE2LS5
PG-TDSON-8
1)
5
6
2
Marking
26NE2LS5
3
6
5
4
1
Table1KeyPerformanceParameters
Parameter
7
3
2
4
7
8
1
S1
8D
S2
7D
S3
6D
G4
5D
RelatedLinks
-
J-STD20 and JESD22
Final Data Sheet
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Rev.2.0,2015-03-10
OptiMOSTM5Power-MOSFET,25V
BSC026NE2LS5
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
3
Rev.2.0,2015-03-10
OptiMOSTM5Power-MOSFET,25V
BSC026NE2LS5
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Values
Unit
Note/TestCondition
82
52
66
42
24
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=4.5V,TC=25°C
VGS=4.5V,TC=100°C
VGS=10V,TA=25°C,RthJA=50K/W1)
-
328
A
TC=25°C
-
-
35
A
TC=25°C
EAS
-
-
14
mJ
ID=35A,RGS=25Ω
Gate source voltage
VGS
-16
-
16
V
-
Power dissipation
Ptot
-
-
29
2.5
W
TC=25°C
TA=25°C,RthJA=50K/W1)
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
ID,pulse
-
Avalanche current, single pulse
IAS
Avalanche energy, single pulse
Continuous drain current
Pulsed drain current2)
3)
3Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case
Values
Min.
Typ.
Max.
RthJC
-
-
4.3
K/W
-
Thermal resistance, junction - case,
top
RthJC
-
-
20
K/W
-
Device on PCB,
6 cm2 cooling area1)
RthJA
-
-
50
K/W
-
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
Final Data Sheet
4
Rev.2.0,2015-03-10
OptiMOSTM5Power-MOSFET,25V
BSC026NE2LS5
4Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
1.6
2
V
VDS=VGS,ID=250µA
-
0.1
10
1
100
µA
VDS=20V,VGS=0V,Tj=25°C
VDS=20V,VGS=0V,Tj=125°C
IGSS
-
10
100
nA
VGS=16V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
3.0
2.2
4.0
2.6
mΩ
VGS=4.5V,ID=30A
VGS=10V,ID=30A
Gate resistance
RG
-
0.7
1.2
Ω
-
Transconductance
gfs
55
110
-
S
|VDS|>2|ID|RDS(on)max,ID=30A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
25
-
Gate threshold voltage
VGS(th)
1.2
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Values
Min.
Typ.
Max.
Ciss
-
780
1100
pF
VGS=0V,VDS=12V,f=1MHz
Output capacitance
Coss
-
390
530
pF
VGS=0V,VDS=12V,f=1MHz
Reverse transfer capacitance
Crss
-
38
-
pF
VGS=0V,VDS=12V,f=1MHz
Turn-on delay time
td(on)
-
3
-
ns
VDD=12V,VGS=10V,ID=30A,
RG,ext=1.6Ω
Rise time
tr
-
3
-
ns
VDD=12V,VGS=10V,ID=30A,
RG,ext=1.6Ω
Turn-off delay time
td(off)
-
13
-
ns
VDD=12V,VGS=10V,ID=30A,
RG,ext=1.6Ω
Fall time
tf
-
2
-
ns
VDD=12V,VGS=10V,ID=30A,
RG,ext=1.6Ω
Unit
Note/TestCondition
Input capacitance1)
1)
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
-
2.0
-
nC
VDD=12V,ID=30A,VGS=0to4.5V
Gate charge at threshold
Qg(th)
-
1.2
-
nC
VDD=12V,ID=30A,VGS=0to4.5V
Gate to drain charge
Qgd
-
1.4
-
nC
VDD=12V,ID=30A,VGS=0to4.5V
Switching charge
Qsw
-
2.2
-
nC
VDD=12V,ID=30A,VGS=0to4.5V
Gate charge total
Qg
-
5.6
7.8
nC
VDD=12V,ID=30A,VGS=0to4.5V
Gate plateau voltage
Vplateau
-
2.6
-
V
VDD=12V,ID=30A,VGS=0to4.5V
Gate charge total
Qg
-
12
16
nC
VDD=12V,ID=30A,VGS=0to10V
Gate charge total, sync. FET
Qg(sync)
-
4.8
-
nC
VDS=0.1V,VGS=0to4.5V
Output charge
Qoss
-
7.6
-
nC
VDD=12V,VGS=0V
1)
2)
Defined by design. Not subject to production test
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
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Rev.2.0,2015-03-10
OptiMOSTM5Power-MOSFET,25V
BSC026NE2LS5
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Values
Unit
Note/TestCondition
29
A
TC=25°C
-
328
A
TC=25°C
-
0.84
1
V
VGS=0V,IF=30A,Tj=25°C
-
7
-
nC
VR=12V,IF=IS,diF/dt=400A/µs
Min.
Typ.
Max.
IS
-
-
Diode pulse current
IS,pulse
-
Diode forward voltage
VSD
Reverse recovery charge
Qrr
Final Data Sheet
6
Rev.2.0,2015-03-10
OptiMOSTM5Power-MOSFET,25V
BSC026NE2LS5
5Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
35
100
30
80
60
20
ID[A]
Ptot[W]
25
15
40
10
20
5
0
0
40
80
120
0
160
0
40
80
TC[°C]
120
160
TC[°C]
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
101
10
1 µs
10 µs
102
0.5
100
ZthJC[K/W]
ID[A]
100 µs
1
10
1 ms
DC 10 ms
0.1
0.05
0.02
0.01
10-1
single pulse
100
10-1
10-1
0.2
100
101
102
10-2
10-6
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
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Rev.2.0,2015-03-10
OptiMOSTM5Power-MOSFET,25V
BSC026NE2LS5
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
320
6
10 V 5 V
5
4.5 V
3.2 V
240
4V
4
RDS(on)[mΩ]
ID[A]
3.5 V
160
3.2 V
3.5 V
4V
4.5 V
3
5V
7V
8V
10 V
2
3V
80
1
2.8 V
0
0
1
2
0
3
0
10
20
VDS[V]
30
40
50
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
320
400
350
240
300
gfs[S]
ID[A]
250
160
200
150
80
100
150 °C
50
25 °C
0
0
1
2
3
4
5
0
0
VGS[V]
160
240
320
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
80
gfs=f(ID);Tj=25°C
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Rev.2.0,2015-03-10
OptiMOSTM5Power-MOSFET,25V
BSC026NE2LS5
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
5
2.5
4
2.0
3
1.5
VGS(th)[V]
RDS(on)[mΩ]
250 µA
typ
2
1
1.0
0.5
0
-60
-20
20
60
100
140
0.0
-60
180
-20
20
Tj[°C]
60
100
140
180
Tj[°C]
RDS(on)=f(Tj);ID=30A;VGS=10V
VGS(th)=f(Tj);VGS=VDS;ID=250µA
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
103
10
25 °C
150 °C
Ciss
103
102
102
101
IF[A]
C[pF]
Coss
101
Crss
0
5
10
15
20
25
100
0.0
VDS[V]
1.0
1.5
VSD[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
0.5
IF=f(VSD);parameter:Tj
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Rev.2.0,2015-03-10
OptiMOSTM5Power-MOSFET,25V
BSC026NE2LS5
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
102
12
12 V
10
5V
20 V
25 °C
101
8
VGS[V]
IAV[A]
100 °C
125 °C
100
6
4
2
10-1
100
101
102
103
0
0
tAV[µs]
4
8
12
16
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=30Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Gate charge waveforms
28
27
26
VBR(DSS)[V]
25
24
23
22
21
20
-60
-20
20
60
100
140
180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
10
Rev.2.0,2015-03-10
OptiMOSTM5Power-MOSFET,25V
BSC026NE2LS5
6PackageOutlines
Figure1OutlinePG-TDSON-8,dimensionsinmm
Final Data Sheet
11
Rev.2.0,2015-03-10
OptiMOSTM5Power-MOSFET,25V
BSC026NE2LS5
Dimension in mm
Figure2OutlineTDSON-8Tape
Final Data Sheet
12
Rev.2.0,2015-03-10
OptiMOSTM5Power-MOSFET,25V
BSC026NE2LS5
RevisionHistory
BSC026NE2LS5
Revision:2015-03-10,Rev.2.0
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2015-03-10
Release of final version
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respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
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Final Data Sheet
13
Rev.2.0,2015-03-10