MOSFET DataSheet OptiMOS

MOSFET DataSheet OptiMOS
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTM5Power-Transistor,100V
BSC040N10NS5
DataSheet
Rev.2.1
Final
PowerManagement&Multimarket
OptiMOSTM5Power-Transistor,100V
BSC040N10NS5
1Description
SuperSO8
8
Features
•OptimizedforhighperformanceSMPS,e.g.sync.rec.
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
7
5
6
4
1
2
3
6
5
3
2
4
7
8
1
Table1KeyPerformanceParameters
Parameter
Value
Unit
S1
8D
VDS
100
V
S2
7D
RDS(on),max
4.0
mΩ
S3
6D
ID
100
A
G4
5D
Qoss
75
nC
QG(0V..10V)
58
nC
Type/OrderingCode
Package
BSC040N10NS5
PG-TDSON-8
1)
Marking
040N10NS
RelatedLinks
-
J-STD20 and JESD22
Final Data Sheet
2
Rev.2.1,2015-01-07
OptiMOSTM5Power-Transistor,100V
BSC040N10NS5
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
3
Rev.2.1,2015-01-07
OptiMOSTM5Power-Transistor,100V
BSC040N10NS5
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current
Values
Unit
Note/TestCondition
100
86
18
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=10V,TC=25°C,RthJA=50K/W1)
-
400
A
TC=25°C
-
-
200
mJ
ID=50A,RGS=25Ω
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
139
2.5
W
TC=25°C
TA=25°C,RthJA=50K/W2)
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
ID,pulse
-
Avalanche energy, single pulse
EAS
Gate source voltage
Pulsed drain current2)
3)
3Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case,
bottom
Values
Min.
Typ.
Max.
RthJC
-
0.5
0.9
K/W
-
Thermal resistance, junction - case,
top
RthJC
-
-
20
K/W
-
Device on PCB,
6 cm2 cooling area1)
RthJA
-
-
50
K/W
-
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
Final Data Sheet
4
Rev.2.1,2015-01-07
OptiMOSTM5Power-Transistor,100V
BSC040N10NS5
4Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
3.0
3.8
V
VDS=VGS,ID=95µA
-
0.1
10
1
100
µA
VDS=100V,VGS=0V,Tj=25°C
VDS=100V,VGS=0V,Tj=125°C
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
3.4
4.0
4.0
5.6
mΩ
VGS=10V,ID=50A
VGS=6V,ID=25A
Gate resistance1)
RG
-
1.3
2.0
Ω
-
Transconductance
gfs
60
120
-
S
|VDS|>2|ID|RDS(on)max,ID=50A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
100
-
Gate threshold voltage
VGS(th)
2.2
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Values
Min.
Typ.
Max.
Ciss
-
4100
5300
pF
VGS=0V,VDS=50V,f=1MHz
Output capacitance
Coss
-
630
820
pF
VGS=0V,VDS=50V,f=1MHz
Reverse transfer capacitance1)
Crss
-
28
49
pF
VGS=0V,VDS=50V,f=1MHz
Turn-on delay time
td(on)
-
13
-
ns
VDD=50V,VGS=10V,ID=50A,
RG,ext=3.0Ω
Rise time
tr
-
9
-
ns
VDD=50V,VGS=10V,ID=50A,
RG,ext=3.0Ω
Turn-off delay time
td(off)
-
32
-
ns
VDD=50V,VGS=10V,ID=50A,
RG,ext=3.0Ω
Fall time
tf
-
10
-
ns
VDD=50V,VGS=10V,ID=50A,
RG,ext=3.0Ω
Input capacitance1)
1)
1)
Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.2.1,2015-01-07
OptiMOSTM5Power-Transistor,100V
BSC040N10NS5
Table6Gatechargecharacteristics1)
Parameter
Symbol
Gate to source charge
Gate charge at threshold
Values
Unit
Note/TestCondition
-
nC
VDD=50V,ID=50A,VGS=0to10V
11
-
nC
VDD=50V,ID=50A,VGS=0to10V
-
12
18
nC
VDD=50V,ID=50A,VGS=0to10V
Qsw
-
19
-
nC
VDD=50V,ID=50A,VGS=0to10V
Gate charge total
Qg
-
58
72
nC
VDD=50V,ID=50A,VGS=0to10V
Gate plateau voltage
Vplateau
-
4.6
-
V
VDD=50V,ID=50A,VGS=0to10V
Gate charge total, sync. FET
Qg(sync)
-
50
-
nC
VDS=0.1V,VGS=0to10V
Qoss
-
75
100
nC
VDD=50V,VGS=0V
Unit
Note/TestCondition
Min.
Typ.
Max.
Qgs
-
19
Qg(th)
-
Gate to drain charge
Qgd
Switching charge
2)
2)
2)
Output charge
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Diode pulse current
Diode forward voltage
2)
Reverse recovery time
2)
Reverse recovery charge
1)
2)
Values
Min.
Typ.
Max.
IS
-
-
100
A
TC=25°C
IS,pulse
-
-
400
A
TC=25°C
VSD
-
0.9
1.1
V
VGS=0V,IF=50A,Tj=25°C
trr
-
54
108
ns
VR=50V,IF=50A,diF/dt=100A/µs
Qrr
-
90
180
nC
VR=50V,IF=50A,diF/dt=100A/µs
See ″Gate charge waveforms″ for parameter definition
Defined by design. Not subject to production test.
Final Data Sheet
6
Rev.2.1,2015-01-07
OptiMOSTM5Power-Transistor,100V
BSC040N10NS5
5Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
160
120
140
100
120
80
ID[A]
Ptot[W]
100
80
60
60
40
40
20
20
0
0
25
50
75
100
125
150
0
175
0
25
50
75
TC[°C]
100
125
150
175
TC[°C]
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
100
10
1 µs
0.5
10 µs
102
0.2
100 µs
0.1
10-1
1 ms
10 ms
100
0.05
ZthJC[K/W]
ID[A]
101
DC
0.02
0.01
single pulse
10-2
10-1
10-2
10-1
100
101
102
103
10-3
10-6
10-5
VDS[V]
10-3
10-2
10-1
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-4
ZthJC=f(tp);parameter:D=tp/T
7
Rev.2.1,2015-01-07
OptiMOSTM5Power-Transistor,100V
BSC040N10NS5
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
400
8
7
7V
10 V
6V
5.5 V
5V
360
320
6V
6
280
5
200
RDS(on)[mΩ]
ID[A]
240
5.5 V
160
7V
4
10 V
3
120
2
5V
80
1
40
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
5.0
0
50
100
150
VDS[V]
200
250
300
350
400
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
400
160
360
320
120
280
gfs[S]
ID[A]
240
200
80
160
120
40
80
40
0
150 °C
0
2
25 °C
4
6
8
0
0
VGS[V]
40
60
80
100
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
20
gfs=f(ID);Tj=25°C
8
Rev.2.1,2015-01-07
OptiMOSTM5Power-Transistor,100V
BSC040N10NS5
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
8
4
6
3
950 µA
95 µA
VGS(th)[V]
RDS(on)[mΩ]
max
4
typ
2
2
1
0
-60
-20
20
60
100
140
0
-60
180
-20
20
Tj[°C]
60
100
140
180
Tj[°C]
RDS(on)=f(Tj);ID=50A;VGS=10V
VGS(th)=f(Tj);VGS=VDS
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
103
10
25 °C
150 °C
25 °C, max
150 °C, max
Ciss
Coss
3
102
IF[A]
C[pF]
10
102
101
Crss
101
0
20
40
60
80
100
100
0.0
VDS[V]
1.0
1.5
VSD[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
0.5
IF=f(VSD);parameter:Tj
9
Rev.2.1,2015-01-07
OptiMOSTM5Power-Transistor,100V
BSC040N10NS5
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
102
10
9
25 °C
8
50 V
7
20 V
80 V
6
VGS[V]
IAV[A]
100 °C
101
5
4
125 °C
3
2
1
100
100
101
102
103
0
0
10
tAV[µs]
20
30
40
50
60
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=50Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Gate charge waveforms
108
106
VBR(DSS)[V]
104
102
100
98
96
94
-60
-20
20
60
100
140
180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
10
Rev.2.1,2015-01-07
OptiMOSTM5Power-Transistor,100V
BSC040N10NS5
6PackageOutlines
Figure1OutlinePG-TDSON-8,dimensionsinmm
Final Data Sheet
11
Rev.2.1,2015-01-07
OptiMOSTM5Power-Transistor,100V
BSC040N10NS5
RevisionHistory
BSC040N10NS5
Revision:2015-01-07,Rev.2.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2014-11-26
Release of final version
2.1
2015-01-07
Update measurement condition for IDSS
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Publishedby
InfineonTechnologiesAG
81726München,Germany
©2015InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
12
Rev.2.1,2015-01-07
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