MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSª5Power-Transistor,80V BSZ075N08NS5 DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSª5Power-Transistor,80V BSZ075N08NS5 1Description TSDSON-8FL (enlarged source interconnection) Features •Idealforhighfrequencyswitchingandsync.rec. •OptimizedtechnologyforDC/DCconverters •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100%avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Halogen-freeaccordingtoIEC61249-2-21 •Highersolderjointreliabilitywithenlargedsourceinterconnection Table1KeyPerformanceParameters Parameter Value Unit VDS 80 V RDS(on),max 7.5 mΩ ID 40 A Qoss 29 nC QG(0V..10V) 24 nC S1 8D S2 7D S3 6D G4 5D Type/OrderingCode Package Marking RelatedLinks BSZ075N08NS5 PG-TSDSON-8 FL 075N08N - 1) J-STD20 and JESD22 Final Data Sheet 2 Rev.2.1,2014-05-05 OptiMOSª5Power-Transistor,80V BSZ075N08NS5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Final Data Sheet 3 Rev.2.1,2014-05-05 OptiMOSª5Power-Transistor,80V BSZ075N08NS5 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 40 40 A TC=25°C TC=100°C - 160 A TC=25°C - - 104 mJ ID=20A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 69 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage Pulsed drain current1) 2) 3Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Device on PCB, 6 cm2 cooling area3) Values Min. Typ. Max. RthJC - 1.1 1.8 K/W - RthJA - - 60 K/W - 1) See figure 3 for more detailed information See figure 13 for more detailed information 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) Final Data Sheet 4 Rev.2.1,2014-05-05 OptiMOSª5Power-Transistor,80V BSZ075N08NS5 4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3 3.8 V VDS=VGS,ID=36µA - 0.1 10 1 100 µA VDS=80V,VGS=0V,Tj=25°C VDS=80V,VGS=0V,Tj=125°C IGSS - 1 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 6.2 8.5 7.5 10.2 mΩ VGS=10V,ID=20A VGS=6V,ID=5A Gate resistance RG - 1.3 2 Ω - Transconductance gfs 21 42 - S |VDS|>2|ID|RDS(on)max,ID=20A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 80 - Gate threshold voltage VGS(th) 2.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Values Min. Typ. Max. Ciss - 1600 2080 pF VGS=0V,VDS=40V,f=1MHz Output capacitance Coss - 280 365 pF VGS=0V,VDS=40V,f=1MHz Reverse transfer capacitance1) Crss - 15 26 pF VGS=0V,VDS=40V,f=1MHz Turn-on delay time td(on) - 10 - ns VDD=40V,VGS=10V,ID=20A, RG,ext=1.6Ω Rise time tr - 4 - ns VDD=40V,VGS=10V,ID=20A, RG,ext=1.6Ω Turn-off delay time td(off) - 19 - ns VDD=40V,VGS=10V,ID=20A, RG,ext=1.6Ω Fall time tf - 4 - ns VDD=40V,VGS=10V,ID=20A, RG,ext=1.6Ω Unit Note/TestCondition Input capacitance 1) Table6Gatechargecharacteristics2) Parameter Symbol Values Min. Typ. Max. Qgs - 7.5 - nC VDD=40V,ID=20A,VGS=0to10V Gate to drain charge Qgd - 5.2 7.8 nC VDD=40V,ID=20A,VGS=0to10V Switching charge Qsw - 8.1 - nC VDD=40V,ID=20A,VGS=0to10V Gate charge total Qg - 24 29.5 nC VDD=40V,ID=20A,VGS=0to10V Gate plateau voltage Vplateau - 4.6 - V VDD=40V,ID=20A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 20 - nC VDS=0.1V,VGS=0to10V Qoss - 29 38.6 nC VDD=40V,VGS=0V Gate to source charge 1) 1) Output charge 1) 2) Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition Final Data Sheet 5 Rev.2.1,2014-05-05 OptiMOSª5Power-Transistor,80V BSZ075N08NS5 Table7Reversediode Parameter Symbol Diode continous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) Values Unit Note/TestCondition 40 A TC=25°C - 160 A TC=25°C - 0.85 1.2 V VGS=0V,IF=20A,Tj=25°C trr - 37 74 ns VR=40V,IF=20A,diF/dt=100A/µs Qrr - 39 78 nC VR=40V,IF=20A,diF/dt=100A/µs Min. Typ. Max. IS - - IS,pulse - VSD Defined by design. Not subject to production test Final Data Sheet 6 Rev.2.1,2014-05-05 OptiMOSª5Power-Transistor,80V BSZ075N08NS5 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 80 50 40 60 ID[A] Ptot[W] 30 40 20 20 10 0 0 25 50 75 100 125 150 0 175 0 25 50 75 TC[°C] 100 125 150 175 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 2 10 10 µs ZthJC[K/W] ID[A] 100 100 µs 101 DC 1 ms 10 ms 0.5 0.2 0.1 0.05 0.02 10-1 0.01 single pulse 0 10 10-1 10-1 100 101 102 10-2 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 7 Rev.2.1,2014-05-05 OptiMOSª5Power-Transistor,80V BSZ075N08NS5 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 160 15 10 V 5V 5.5 V 7V 12 120 6V RDS(on)[mΩ] ID[A] 6V 80 5.5 V 40 0 5V 0 1 2 3 4 9 7V 10 V 6 3 0 5 0 20 40 VDS[V] 60 80 100 80 100 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 160 100 80 120 gfs[S] ID[A] 60 80 40 40 20 25 °C 150 °C 0 0 2 4 6 8 0 0 VGS[V] 40 60 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 20 gfs=f(ID);Tj=25°C 8 Rev.2.1,2014-05-05 OptiMOSª5Power-Transistor,80V BSZ075N08NS5 Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 15 4.0 3.5 12 360 µA 3.0 36 µA 2.5 max VGS(th)[V] RDS(on)[mΩ] 9 typ 6 2.0 1.5 1.0 3 0.5 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 60 Tj[°C] 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=20A;VGS=10V VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 150 °C 25 °C, max 150 °C, max Ciss 103 102 IF[A] C[pF] Coss 102 101 Crss 101 0 20 40 60 80 100 0.0 0.5 VDS[V] 1.5 2.0 2.5 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 IF=f(VSD);parameter:Tj 9 Rev.2.1,2014-05-05 OptiMOSª5Power-Transistor,80V BSZ075N08NS5 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 102 12 40 V 10 20 V 60 V 25 °C VGS[V] IAV[A] 8 101 6 100 °C 4 125 °C 2 100 100 101 102 103 0 0 5 tAV[µs] 10 15 20 25 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=20Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 90 VBR(DSS)[V] 80 70 60 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 10 Rev.2.1,2014-05-05 OptiMOSª5Power-Transistor,80V BSZ075N08NS5 6PackageOutlines Figure1OutlinePG-TSDSON-8FL,dimensionsinmm/inches Final Data Sheet 11 Rev.2.1,2014-05-05 OptiMOSª5Power-Transistor,80V BSZ075N08NS5 RevisionHistory BSZ075N08NS5 Revision:2014-05-05,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2014-05-05 Release of Final Version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 12 Rev.2.1,2014-05-05
* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project
advertisement
© 2021