MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSª5Power-Transistor,100V IPA083N10N5 DataSheet Rev.2.0 Final PowerManagement&Multimarket OptiMOSª5Power-Transistor,100V IPA083N10N5 1Description TO-220-FP Features •Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100%avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 8.3 mΩ ID 44 A Qoss 40 nC QG(0V..10V) 30 nC Type/OrderingCode Package IPA083N10N5 PG-TO220-FP 1) Drain Pin 2 Gate Pin 1 Source Pin 3 Marking 083N10N5 RelatedLinks - J-STD20 and JESD22 Final Data Sheet 2 Rev.2.0,2014-12-18 OptiMOSª5Power-Transistor,100V IPA083N10N5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 3 Rev.2.0,2014-12-18 OptiMOSª5Power-Transistor,100V IPA083N10N5 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 44 32 A TC=25°C TC=100°C - 176 A TC=25°C - - 70 mJ ID=44A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 36 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition K/W - Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current1) ID,pulse - Avalanche energy, single pulse EAS Gate source voltage 3Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case RthJC Values Min. Typ. Max. - 3.1 4.1 4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Min. Typ. Max. V(BR)DSS 100 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 2.2 3.0 3.8 V VDS=VGS,ID=49µA Zero gate voltage drain current IDSS - 0.1 10 1 100 µA VDS=100V,VGS=0V,Tj=25°C VDS=100V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 1 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 7.2 8.8 8.3 11.0 mΩ VGS=10V,ID=44A VGS=6V,ID=22A Gate resistance2) RG - 1.2 1.8 Ω - Transconductance gfs 38 76 - S |VDS|>2|ID|RDS(on)max,ID=44A 1) 2) see figure 3 Defined by design. Not subject to production test. Final Data Sheet 4 Rev.2.0,2014-12-18 OptiMOSª5Power-Transistor,100V IPA083N10N5 Table5Dynamiccharacteristics1) Parameter Symbol Input capacitance Values Unit Note/TestCondition 2730 pF VGS=0V,VDS=50V,f=1MHz 337 438 pF VGS=0V,VDS=50V,f=1MHz - 16 28 pF VGS=0V,VDS=50V,f=1MHz td(on) - 15 - ns VDD=50V,VGS=10V,ID=44A, RG,ext=1.6Ω Rise time tr - 5 - ns VDD=50V,VGS=10V,ID=44A, RG,ext=1.6Ω Turn-off delay time td(off) - 24 - ns VDD=50V,VGS=10V,ID=44A, RG,ext=1.6Ω Fall time tf - 5 - ns VDD=50V,VGS=10V,ID=44A, RG,ext=1.6Ω Unit Note/TestCondition Min. Typ. Max. Ciss - 2100 Output capacitance Coss - Reverse transfer capacitance Crss Turn-on delay time Table6Gatechargecharacteristics2) Parameter Symbol Values Min. Typ. Max. Qgs - 10 - nC VDD=50V,ID=44A,VGS=0to10V Gate to drain charge Qgd - 6 10 nC VDD=50V,ID=44A,VGS=0to10V Switching charge Qsw - 10 - nC VDD=50V,ID=44A,VGS=0to10V Gate charge total Qg - 30 37 nC VDD=50V,ID=44A,VGS=0to10V Gate plateau voltage Vplateau - 4.8 - V VDD=50V,ID=44A,VGS=0to10V Qoss - 40 53 nC VDD=50V,VGS=0V Unit Note/TestCondition Gate to source charge 1) 1) 1) Output charge Table7Reversediode Parameter Symbol Diode continous forward current Values Min. Typ. Max. IS - - 30 A TC=25°C Diode pulse current IS,pulse - - 176 A TC=25°C Diode forward voltage VSD - 0.9 1.2 V VGS=0V,IF=44A,Tj=25°C trr - 55 110 ns VR=50V,IF=IS,diF/dt=100A/µs Qrr - 95 190 nC VR=50V,IF=IS,diF/dt=100A/µs Reverse recovery time1) 1) Reverse recovery charge 1) 2) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition Final Data Sheet 5 Rev.2.0,2014-12-18 OptiMOSª5Power-Transistor,100V IPA083N10N5 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 40 50 40 30 ID[A] Ptot[W] 30 20 20 10 10 0 0 50 100 150 0 200 0 50 100 TC[°C] 150 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 2 10 0.5 10 µs 100 ZthJC[K/W] ID[A] 100 µs 1 ms 101 0.1 0.05 0.02 10-1 10 ms 0.2 0.01 100 single pulse DC -1 10 10-1 100 101 102 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.0,2014-12-18 OptiMOSª5Power-Transistor,100V IPA083N10N5 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 180 20 10 V 160 4.5 V 8V 5V 6V 6V 140 15 RDS(on)[mΩ] ID[A] 120 100 80 10 8V 10 V 60 5V 5 40 20 0 4.5 V 0 1 2 3 4 0 5 0 20 40 60 80 VDS[V] 100 120 140 160 180 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 180 120 160 100 140 80 100 gfs[S] ID[A] 120 80 60 60 40 40 20 20 0 175 °C 0 2 25 °C 4 6 8 0 0 VGS[V] 40 60 80 100 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 20 gfs=f(ID);Tj=25°C 7 Rev.2.0,2014-12-18 OptiMOSª5Power-Transistor,100V IPA083N10N5 Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 18 4.0 16 3.5 14 490 µA 3.0 12 49 µA max 10 VGS(th)[V] RDS(on)[mΩ] 2.5 typ 8 2.0 1.5 6 1.0 4 0.5 2 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=44A;VGS=10V VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 175 °C 25 °C, max 175 °C, max Ciss 103 102 IF[A] C[pF] Coss 102 101 Crss 101 0 20 40 60 80 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 8 Rev.2.0,2014-12-18 OptiMOSª5Power-Transistor,100V IPA083N10N5 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 102 10 8 50 V 25 °C 101 20 V VGS[V] IAS[A] 6 100 °C 80 V 4 150 °C 2 100 100 101 102 103 0 0 tAV[µs] 10 20 30 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=44Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 110 VBR(DSS)[V] 105 100 95 90 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.0,2014-12-18 OptiMOSª5Power-Transistor,100V IPA083N10N5 6PackageOutlines Figure1OutlinePG-TO220-FP,dimensionsinmm/inches Final Data Sheet 10 Rev.2.0,2014-12-18 OptiMOSª5Power-Transistor,100V IPA083N10N5 RevisionHistory IPA083N10N5 Revision:2014-12-18,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2014-12-18 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.0,2014-12-18
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