MOSFET DataSheet OptiMOS PowerManagement&Multimarket

MOSFET DataSheet OptiMOS PowerManagement&Multimarket
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSª5Power-Transistor,100V
IPA083N10N5
DataSheet
Rev.2.0
Final
PowerManagement&Multimarket
OptiMOSª5Power-Transistor,100V
IPA083N10N5
1Description
TO-220-FP
Features
•Idealforhighfrequencyswitchingandsync.rec.
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowon-resistanceRDS(on)
•N-channel,normallevel
•100%avalanchetested
•Pb-freeplating;RoHScompliant
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
100
V
RDS(on),max
8.3
mΩ
ID
44
A
Qoss
40
nC
QG(0V..10V)
30
nC
Type/OrderingCode
Package
IPA083N10N5
PG-TO220-FP
1)
Drain
Pin 2
Gate
Pin 1
Source
Pin 3
Marking
083N10N5
RelatedLinks
-
J-STD20 and JESD22
Final Data Sheet
2
Rev.2.0,2014-12-18
OptiMOSª5Power-Transistor,100V
IPA083N10N5
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
3
Rev.2.0,2014-12-18
OptiMOSª5Power-Transistor,100V
IPA083N10N5
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current
Values
Unit
Note/TestCondition
44
32
A
TC=25°C
TC=100°C
-
176
A
TC=25°C
-
-
70
mJ
ID=44A,RGS=25Ω
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
36
W
TC=25°C
Operating and storage temperature
Tj,Tstg
-55
-
175
°C
IEC climatic category;
DIN IEC 68-1: 55/175/56
Unit
Note/TestCondition
K/W
-
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
Pulsed drain current1)
ID,pulse
-
Avalanche energy, single pulse
EAS
Gate source voltage
3Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case
RthJC
Values
Min.
Typ.
Max.
-
3.1
4.1
4Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Min.
Typ.
Max.
V(BR)DSS
100
-
-
V
VGS=0V,ID=1mA
Gate threshold voltage
VGS(th)
2.2
3.0
3.8
V
VDS=VGS,ID=49µA
Zero gate voltage drain current
IDSS
-
0.1
10
1
100
µA
VDS=100V,VGS=0V,Tj=25°C
VDS=100V,VGS=0V,Tj=125°C
Gate-source leakage current
IGSS
-
1
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
7.2
8.8
8.3
11.0
mΩ
VGS=10V,ID=44A
VGS=6V,ID=22A
Gate resistance2)
RG
-
1.2
1.8
Ω
-
Transconductance
gfs
38
76
-
S
|VDS|>2|ID|RDS(on)max,ID=44A
1)
2)
see figure 3
Defined by design. Not subject to production test.
Final Data Sheet
4
Rev.2.0,2014-12-18
OptiMOSª5Power-Transistor,100V
IPA083N10N5
Table5Dynamiccharacteristics1)
Parameter
Symbol
Input capacitance
Values
Unit
Note/TestCondition
2730
pF
VGS=0V,VDS=50V,f=1MHz
337
438
pF
VGS=0V,VDS=50V,f=1MHz
-
16
28
pF
VGS=0V,VDS=50V,f=1MHz
td(on)
-
15
-
ns
VDD=50V,VGS=10V,ID=44A,
RG,ext=1.6Ω
Rise time
tr
-
5
-
ns
VDD=50V,VGS=10V,ID=44A,
RG,ext=1.6Ω
Turn-off delay time
td(off)
-
24
-
ns
VDD=50V,VGS=10V,ID=44A,
RG,ext=1.6Ω
Fall time
tf
-
5
-
ns
VDD=50V,VGS=10V,ID=44A,
RG,ext=1.6Ω
Unit
Note/TestCondition
Min.
Typ.
Max.
Ciss
-
2100
Output capacitance
Coss
-
Reverse transfer capacitance
Crss
Turn-on delay time
Table6Gatechargecharacteristics2)
Parameter
Symbol
Values
Min.
Typ.
Max.
Qgs
-
10
-
nC
VDD=50V,ID=44A,VGS=0to10V
Gate to drain charge
Qgd
-
6
10
nC
VDD=50V,ID=44A,VGS=0to10V
Switching charge
Qsw
-
10
-
nC
VDD=50V,ID=44A,VGS=0to10V
Gate charge total
Qg
-
30
37
nC
VDD=50V,ID=44A,VGS=0to10V
Gate plateau voltage
Vplateau
-
4.8
-
V
VDD=50V,ID=44A,VGS=0to10V
Qoss
-
40
53
nC
VDD=50V,VGS=0V
Unit
Note/TestCondition
Gate to source charge
1)
1)
1)
Output charge
Table7Reversediode
Parameter
Symbol
Diode continous forward current
Values
Min.
Typ.
Max.
IS
-
-
30
A
TC=25°C
Diode pulse current
IS,pulse
-
-
176
A
TC=25°C
Diode forward voltage
VSD
-
0.9
1.2
V
VGS=0V,IF=44A,Tj=25°C
trr
-
55
110
ns
VR=50V,IF=IS,diF/dt=100A/µs
Qrr
-
95
190
nC
VR=50V,IF=IS,diF/dt=100A/µs
Reverse recovery time1)
1)
Reverse recovery charge
1)
2)
Defined by design. Not subject to production test.
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
5
Rev.2.0,2014-12-18
OptiMOSª5Power-Transistor,100V
IPA083N10N5
5Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
40
50
40
30
ID[A]
Ptot[W]
30
20
20
10
10
0
0
50
100
150
0
200
0
50
100
TC[°C]
150
200
TC[°C]
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
101
10
1 µs
2
10
0.5
10 µs
100
ZthJC[K/W]
ID[A]
100 µs
1 ms
101
0.1
0.05
0.02
10-1
10 ms
0.2
0.01
100
single pulse
DC
-1
10
10-1
100
101
102
103
10-2
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
6
Rev.2.0,2014-12-18
OptiMOSª5Power-Transistor,100V
IPA083N10N5
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
180
20
10 V
160
4.5 V
8V
5V
6V
6V
140
15
RDS(on)[mΩ]
ID[A]
120
100
80
10
8V
10 V
60
5V
5
40
20
0
4.5 V
0
1
2
3
4
0
5
0
20
40
60
80
VDS[V]
100
120
140
160
180
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
180
120
160
100
140
80
100
gfs[S]
ID[A]
120
80
60
60
40
40
20
20
0
175 °C
0
2
25 °C
4
6
8
0
0
VGS[V]
40
60
80
100
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
20
gfs=f(ID);Tj=25°C
7
Rev.2.0,2014-12-18
OptiMOSª5Power-Transistor,100V
IPA083N10N5
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
18
4.0
16
3.5
14
490 µA
3.0
12
49 µA
max
10
VGS(th)[V]
RDS(on)[mΩ]
2.5
typ
8
2.0
1.5
6
1.0
4
0.5
2
0
-60
-20
20
60
100
140
0.0
-60
180
-20
20
Tj[°C]
60
100
140
180
Tj[°C]
RDS(on)=f(Tj);ID=44A;VGS=10V
VGS(th)=f(Tj);VGS=VDS;parameter:ID
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
103
10
25 °C
175 °C
25 °C, max
175 °C, max
Ciss
103
102
IF[A]
C[pF]
Coss
102
101
Crss
101
0
20
40
60
80
100
0.0
0.5
VDS[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
1.0
1.5
2.0
VSD[V]
IF=f(VSD);parameter:Tj
8
Rev.2.0,2014-12-18
OptiMOSª5Power-Transistor,100V
IPA083N10N5
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
102
10
8
50 V
25 °C
101
20 V
VGS[V]
IAS[A]
6
100 °C
80 V
4
150 °C
2
100
100
101
102
103
0
0
tAV[µs]
10
20
30
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=44Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Gate charge waveforms
110
VBR(DSS)[V]
105
100
95
90
-60
-20
20
60
100
140
180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
9
Rev.2.0,2014-12-18
OptiMOSª5Power-Transistor,100V
IPA083N10N5
6PackageOutlines
Figure1OutlinePG-TO220-FP,dimensionsinmm/inches
Final Data Sheet
10
Rev.2.0,2014-12-18
OptiMOSª5Power-Transistor,100V
IPA083N10N5
RevisionHistory
IPA083N10N5
Revision:2014-12-18,Rev.2.0
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2014-12-18
Release of final version
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Publishedby
InfineonTechnologiesAG
81726München,Germany
©2014InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
11
Rev.2.0,2014-12-18
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