Opti MOS 

Opti MOS  
SPD30N03S2L-10 G
OptiMOS Power-Transistor
Feature
Product Summary
• N-Channel
VDS
30
V
• Enhancement mode
R DS(on)
10
mΩ
• Logic Level
ID
30
A
• Low On-Resistance R DS(on)
PG-TO252-3
• Excellent Gate Charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
° Pb-free lead plating; RoHS compliant
Type
Package
SPD30N03S2L-10G PG-TO252-3
Marking
2N03L10
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
ID
Value
Unit
A
30
TC=25°C
30
ID puls
120
EAS
150
Repetitive avalanche energy, limited by Tjmax 2)
EAR
10
Reverse diode dv/dt
dv/dt
6
Gate source voltage
VGS
±20
V
Power dissipation
Ptot
100
W
-55... +175
°C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
mJ
ID=30 A , V DD=25V, RGS=25Ω
kV/µs
IS=30A, VDS=24V, di/dt=200A/µs, T jmax=175°C
TC=25°C
Operating and storage temperature
T j , Tstg
IEC climatic category; DIN IEC 68-1
55/175/56
Page 1
02-09-2008
SPD30N03S2L-10 G
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
RthJC
-
1
1.5
Thermal resistance, junction - ambient, leaded
RthJA
-
-
100
SMD version, device on PCB:
RthJA
-
-
75
-
-
50
@ min. footprint
@ 6 cm2 cooling area
3)
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)DSS
30
-
-
VGS(th)
1.2
1.6
2
Static Characteristics
Drain-source breakdown voltage
V
V GS=0V, ID=1mA
Gate threshold voltage, VGS = V DS
ID=50µA
Zero gate voltage drain current
µA
IDSS
V DS=30V, VGS=0V, Tj=25°C
-
0.01
1
V DS=30V, VGS=0V, Tj=125°C
-
10
100
IGSS
-
1
100
nA
RDS(on)
-
11.2
14.6
Ω
RDS(on)
-
7.8
10
Gate-source leakage current
V GS=20V, VDS=0V
Drain-source on-state resistance
V GS=4.5V, I D=30A
Drain-source on-state resistance
mΩ
V GS=10V, I D=30
1Current limited by bondwire ; with an RthJC = 1.5K/W the chip is able to carry ID= 76A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
02-09-2008
SPD30N03S2L-10 G
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
23.8
47.5
-
Dynamic Characteristics
Transconductance
gfs
VDS ≥2*ID *RDS(on)max,
S
ID =30A
Input capacitance
Ciss
VGS =0V, VDS =25V,
-
1160
1550 pF
Output capacitance
Coss
f=1MHz
-
450
600
Reverse transfer capacitance
Crss
-
120
175
Turn-on delay time
td(on)
VDD =15V, VGS =10V,
-
6.1
9.2
Rise time
tr
ID =30A,
-
13
20
Turn-off delay time
td(off)
RG =5.4Ω
-
27
41
Fall time
tf
-
17
26
-
3.7
4.9
-
10.9
16.3
-
31.4
41.8
V(plateau) VDD =24V, ID =30A
-
3.4
-
V
IS
-
-
30
A
-
-
120
ns
Gate Charge Characteristics
Gate to source charge
Qgs
Gate to drain charge
Qgd
Gate charge total
Qg
VDD =24V, ID =30A
VDD =24V, ID =30A,
nC
VGS =0 to 10V
Gate plateau voltage
Reverse Diode
Inverse diode continuous
TC=25°C
forward current
Inv. diode direct current, pulsed
ISM
Inverse diode forward voltage
VSD
V GS=0V, IF=30A
-
0.9
1.2
V
Reverse recovery time
trr
V R=-V, IF=lS,
-
31
39
ns
Reverse recovery charge
Qrr
diF/dt=100A/µs
-
29
37
nC
Page 3
02-09-2008
SPD30N03S2L-10 G
1 Power dissipation
2 Drain current
Ptot = f (TC)
ID = f (T C)
parameter: VGS≥ 4 V
parameter: VGS≥ 10 V
SPD30N03S2L-10
110
SPD30N03S2L-10
32
W
A
90
24
70
ID
P tot
80
20
60
16
50
12
40
30
8
20
4
10
0
0
20
40
60
80
0
100 120 140 160 °C 190
0
20
40
60
80
100 120 140 160 °C 190
TC
TC
3 Safe operating area
4 Max. transient thermal impedance
ID = f ( VDS )
Z thJC = f (t p)
parameter : D = 0 , TC = 25 °C
parameter : D = t p/T
10
3 SPD30N03S2L-10
10
1 SPD30N03S2L-10
K/W
A
10
DS
2
Z thJC
/I
D
t = 10.0µs
p
DS
(on
)
=
ID
V
10
0
10
-1
10
-2
R
100 µs
D = 0.50
10
0.20
1
0.10
1 ms
0.05
single pulse
10
0.02
-3
0.01
10
0
10
-1
10
0
10
1
V
10
2
VDS
Page 4
10
-4
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
tp
02-09-2008
0
SPD30N03S2L-10 G
5 Typ. output characteristic
6 Typ. drain-source on resistance
ID = f (V DS); T j=25°C
RDS(on) = f (I D)
parameter: tp = 80 µs
parameter: VGS
SPD30N03S2L-10
75
A
SPD30N03S2L-10
32
Ptot = 100W
mΩ
60
55
c
ID
50
45
b
c
3.0
b
3.5
c
4.0
d
4.5
e
5.0
f
5.5
R DS(on)
V
[V]
GS
a
fe d
40
24
20
16
35
30
12
d
8
f
b
25
e
20
15
10
4 VGS [V] =
a
b
3.5
5
0
0
0.5
1
1.5
2
2.5
3
3.5
4
c
4.0
d
4.5
e
5.0
f
5.5
0
V
5
0
10
20
30
40
A
8 Typ. forward transconductance
ID= f ( V GS ); V DS≥ 2 x ID x RDS(on)max
g fs = f(I D); T j=25°C
parameter: tp = 80 µs
parameter: g fs
60
60
A
S
50
50
45
45
40
40
g fs
ID
7 Typ. transfer characteristics
35
35
30
30
25
25
20
20
15
15
10
10
5
5
0
0
0.5
1
1.5
2
2.5
3
3.5
4
V 5
VGS
Page 5
60
ID
VDS
0
0
10
20
30
40
A
60
ID
02-09-2008
SPD30N03S2L-10 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
RDS(on) = f (Tj)
VGS(th) = f (T j)
parameter : ID = 30 , VGS = 10 V
parameter: VGS = VDS
SPD30N03S2L-10
24
2.5
mΩ
V
18
V GS(th)
R DS(on)
20
16
14
12
0,4mA
1.5
98%
50µA
10
1
typ
8
6
0.5
4
2
0
-60
-20
20
60
140 °C
100
0
-60
200
-20
20
60
°C
100
Tj
180
Tj
11 Typ. capacitances
12 Forward character. of reverse diode
C = f (V DS)
IF = f (V SD)
parameter: VGS=0V, f=1 MHz
parameter: T j , tp = 80 µs
10
4
10
3 SPD30N03S2L-10
A
pF
10
10
2
10
1
IF
C
Ciss
3
Coss
T j = 25 °C typ
T j = 175 °C typ
Crss
T j = 25 °C (98%)
T j = 175 °C (98%)
10
2
0
10
5
10
15
20
V
30
V DS
Page 6
0
0
0.4
0.8
1.2
1.6
2
2.4 V
3
VSD
02-09-2008
SPD30N03S2L-10 G
13 Typ. avalanche energy
14 Typ. gate charge
E AS = f (T j)
VGS = f (QGate)
par.: I D = 30 A , V DD = 25 V, R GS = 25 Ω
parameter: ID = 30 A pulsed
160
mJ
V
12
VGS
120
E AS
SPD30N03S2L-10
16
100
10
80
8
60
6
40
4
20
2
0
25
45
65
85
105
125
145
°C 185
Tj
0,2 VDS max
0,8 VDS max
0
0
5
10
15
20
25
30
35
40 nC
50
QGate
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
parameter: ID=10 mA
36
SPD30N03S2L-10
V(BR)DSS
V
34
33
32
31
30
29
28
27
-60
-20
20
60
100
140 °C
200
Tj
Page 7
02-09-2008
SPD30N03S2L-10 G
Package outline: PG-TO252-3
Page 8
02-09-2008
SPD30N03S2L-10 G
Page 9
02-09-2008
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