MOSFET DataSheet OptiMOS PowerManagement&Multimarket

MOSFET DataSheet OptiMOS PowerManagement&Multimarket
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTM3Power-Transistor,100V
IPT020N10N3
DataSheet
Rev.2.0
Final
PowerManagement&Multimarket
OptiMOSTM3Power-Transistor,100V
IPT020N10N3
1Description
HSOF
Features
Tab
•N-channel,normallevel
•ExcellentgatechargexRDS(on)product(FOM)
•Extremelylowon-resistanceRDS(on)
•Highcurrentcapability
•175°Coperatingtemperature
•Pb-freeleadplating;RoHScompliant
•QualifiedaccordingtoJEDEC1)fortargetapplication
•Halogen-freeaccordingtoIEC61249-2-21
12
34
56
78
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
100
V
RDS(on),max
2
mΩ
ID
300
A
Type/OrderingCode
Package
IPT020N10N3
PG-HSOF-8-1
1)
Drain
Tab
Gate
Pin 1
Source
Pin 2-8
Marking
020N10N3
RelatedLinks
-
J-STD20 and JESD22
Final Data Sheet
2
Rev.2.0,2014-02-17
OptiMOSTM3Power-Transistor,100V
IPT020N10N3
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
3
Rev.2.0,2014-02-17
OptiMOSTM3Power-Transistor,100V
IPT020N10N3
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current
Values
Unit
Note/TestCondition
300
212
A
TC=25°C1)
TC=100°C
-
1200
A
TC=25°C
-
-
800
mJ
ID=150A,RGS=25Ω
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
375
W
TC=25°C
Operating and storage temperature
Tj,Tstg
-55
-
175
°C
IEC climatic category;
DIN IEC 68-1: 55/175/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
Pulsed drain current 1)
ID,pulse
-
Avalanche energy, single pulse
EAS
Gate source voltage
3Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance junction - case
Values
Min.
Typ.
Max.
RthJC
-
0.2
0.4
K/W
-
Thermal resistance junction - ambient,
RthJA
minimal footprint
-
-
62
K/W
-
Thermal resistance junction - ambient,
RthJA
6 cm2 cooling area 2)
-
-
40
K/W
-
1)
See figure 3
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
2)
Final Data Sheet
4
Rev.2.0,2014-02-17
OptiMOSTM3Power-Transistor,100V
IPT020N10N3
4Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
2.7
3.5
V
VDS=VGS,ID=272µA
-
0.1
10
1
100
µA
VDS=100V,VGS=0V,Tj=25°C
VDS=100V,VGS=0V,Tj=125°C
IGSS
-
1
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
1.7
2.2
2
3.7
mΩ
VGS=10V,ID=150A
VGS=6V,ID=75A,
Gate resistance
RG
-
1.9
2.9
Ω
-
Transconductance
gfs
125
250
-
S
|VDS|>2|ID|RDS(on)max,ID=150A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
100
-
Gate threshold voltage
VGS(th)
2
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Values
Min.
Typ.
Max.
Ciss
-
11200 14896 pF
VGS=0V,VDS=50V,f=1MHz
Output capacitance
Coss
-
2010
2673
pF
VGS=0V,VDS=50V,f=1MHz
Reverse transfer capacitance
Crss
-
69
138
pF
VGS=0V,VDS=50V,f=1MHz
Turn-on delay time
td(on)
-
34
-
ns
VDD=50V,VGS=10V,ID=100A,
RG,ext=1.6Ω
Rise time
tr
-
58
-
ns
VDD=50V,VGS=10V,ID=100A,
RG,ext=1.6Ω
Turn-off delay time
td(off)
-
84
-
ns
VDD=50V,VGS=10V,ID=100A,
RG,ext=1.6Ω
Fall time
tf
-
18
-
ns
VDD=50V,VGS=10V,ID=100A,
RG,ext=1.6Ω
Unit
Note/TestCondition
Table6Gatechargecharacteristics1)
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
-
48
-
nC
VDD=50V,ID=100A,VGS=0to10V
Gate to drain charge
Qgd
-
27
-
nC
VDD=50V,ID=100A,VGS=0to10V
Switching charge
Qsw
-
42
-
nC
VDD=50V,ID=100A,VGS=0to10V
Gate charge total
Qg
-
156
207
nC
VDD=50V,ID=100A,VGS=0to10V
Gate plateau voltage
Vplateau
-
4.3
-
V
VDD=50V,ID=100A,VGS=0to10V
Output charge
Qoss
-
55
-
nC
VDD=50V,VGS=0V
1)
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
5
Rev.2.0,2014-02-17
OptiMOSTM3Power-Transistor,100V
IPT020N10N3
Table7Reversediode
Parameter
Symbol
Diode continous forward current
Values
Unit
Note/TestCondition
300
A
TC=25°C
-
1200
A
TC=25°C
-
0.89
1
V
VGS=0V,IF=150A,Tj=25°C
trr
-
86
172
ns
VR=50V,IF=IS,diF/dt=100A/µs
Qrr
-
232
-
nC
VR=50V,IF=IS,diF/dt=100A/µs
Min.
Typ.
Max.
IS
-
-
Diode pulse current
IS,pulse
-
Diode forward voltage
VSD
Reverse recovery time
Reverse recovery charge
Final Data Sheet
6
Rev.2.0,2014-02-17
OptiMOSTM3Power-Transistor,100V
IPT020N10N3
5Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
450
350
400
300
350
250
200
250
ID[A]
Ptot[W]
300
200
150
150
100
100
50
50
0
0
50
100
150
0
200
0
50
100
TC[°C]
150
200
TC[°C]
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
4
100
10
103
1 µs
10 µs
0.5
100 µs
ZthJC[K/W]
ID[A]
102
1 ms
101
10 ms
10-1
0.2
0.1
DC
0.05
100
0.02
0.01
single pulse
10-1
10-1
100
101
102
103
10-2
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
7
Rev.2.0,2014-02-17
OptiMOSTM3Power-Transistor,100V
IPT020N10N3
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
1200
6
10 V
1000
5
4.5 V
7.5 V
5V
4
RDS(on)[mΩ]
ID[A]
800
6V
600
400
6V
3
7.5 V
2
10 V
5V
200
1
4.5 V
0
0
1
2
3
4
0
5
0
200
400
VDS[V]
600
800
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
1200
300
1000
250
800
200
gfs[S]
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
600
100
200
50
25 °C
175 °C
0
2
4
6
8
0
0
VGS[V]
50
100
150
200
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
1200
150
400
0
1000
ID[A]
gfs=f(ID);Tj=25°C
8
Rev.2.0,2014-02-17
OptiMOSTM3Power-Transistor,100V
IPT020N10N3
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
6
4.0
3.5
5
3.0
2750 µA
4
VGS(th)[V]
RDS(on)[mΩ]
2.5
3
max
275 µA
2.0
1.5
typ
2
1.0
1
0.5
0
-60
-20
20
60
100
140
0.0
-60
180
-20
20
Tj[°C]
60
100
140
180
Tj[°C]
RDS(on)=f(Tj);ID=150A;VGS=10V
VGS(th)=f(Tj);VGS=VDS;parameter:ID
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
5
104
10
25 °C
175 °C
25 °C, 98%
175 °C, 98%
Ciss
104
103
IF[A]
C[pF]
Coss
103
Crss
102
101
0
20
40
102
101
60
80
100
100
0.0
0.5
VDS[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
1.0
1.5
2.0
VSD[V]
IF=f(VSD);parameter:Tj
9
Rev.2.0,2014-02-17
OptiMOSTM3Power-Transistor,100V
IPT020N10N3
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
103
10
8
80 V
25 °C
102
VGS[V]
IAS[A]
50 V
6
100 °C
150 °C
20 V
4
1
10
2
100
100
101
102
103
0
0
tAV[µs]
40
80
120
160
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=100Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Gate charge waveforms
110
VBR(DSS)[V]
105
100
95
90
-60
-20
20
60
100
140
180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
10
Rev.2.0,2014-02-17
OptiMOSTM3Power-Transistor,100V
IPT020N10N3
6PackageOutlines
1) partially covered with Mold Flash
DIM
A
b
b1
b2
c
D
D2
E
E1
E4
E5
e
H
H1
H2
H3
H4
N
K1
L
L1
L2
L4
MILLIMETERS
MIN
MAX
2.20
2.40
0.70
0.90
9.70
9.90
0.42
0.50
0.40
0.60
10.28
10.58
3.30
9.70
10.10
7.50
8.50
9.46
1.20 (BSC)
11.48
6.55
11.88
6.75
INCHES
MIN
0.087
0.028
0.382
0.017
0.016
0.405
MAX
0.094
0.035
0.390
0.020
0.024
0.416
0.398
0.295
0.335
0.372
0.047 (BSC)
2
0.452
0.258
0.063
0.020
0.020
0.039
0
2
4mm
EUROPEAN PROJECTION
0.468
0.266
0.281
0.141
0.128
8
0.165
2.10
0.90
0.70
1.30
0
SCALE
0.130
0.382
7.15
3.59
3.26
8
4.18
1.60
0.50
0.50
1.00
DOCUMENT NO.
Z8B00169619
0.083
0.035
0.028
0.051
ISSUE DATE
14-06-2013
REVISION
01
Figure1OutlinePG-HSOF-8-1,dimensionsinmm/inches
Final Data Sheet
11
Rev.2.0,2014-02-17
OptiMOSTM3Power-Transistor,100V
IPT020N10N3
RevisionHistory
IPT020N10N3
Revision:2014-02-17,Rev.2.0
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2014-02-17
Release of final version
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Publishedby
InfineonTechnologiesAG
81726München,Germany
©2014InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
12
Rev.2.0,2014-02-17
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