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EiceDRIVER™
1ED020I12-FT
Single IGBT Driver IC
Final Data Sheet
Rev 2.0, 2012-07-31
Industrial Power Control
Edition 2012-07-31
Published by
Infineon Technologies AG
81726 Munich, Germany
©
2012 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
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Infineon Technologies Office (
www.infineon.com
).
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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
EiceDRIVER™
1ED020I12-FT
Revision History
Page or Item Subjects (major changes since previous revision)
Rev 2.0, 2012-07-31
Trademarks of Infineon Technologies AG
AURIX™, BlueMoon™, C166™, CanPAK™, CIPOS™, CIPURSE™, COMNEON™, EconoPACK™, CoolMOS™,
CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™,
MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PRIMARION™,
PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™,
SINDRION™, SIPMOS™, SMARTi™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™,
TRENCHSTOP™, TriCore™, X-GOLD™, X-PMU™, XMM™, XPOSYS™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc.,
OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc.
RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc.
SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden
Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA.
UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of
Diodes Zetex Limited.
Last Trademarks Update 2010-10-26
Final Data Sheet 3 Rev 2.0, 2012-07-31
EiceDRIVER™
1ED020I12-FT
4.6
4.7
4.8
Table of Contents
Two-Level Turn-Off . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Minimal On Time / Off Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
External Protection Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Final Data Sheet 4 Rev 2.0, 2012-07-31
EiceDRIVER™
1ED020I12-FT
List of Figures
T
TLSET
Time over
C
TLSET
Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Final Data Sheet 5 Rev 2.0, 2012-07-31
EiceDRIVER™
1ED020I12-FT
List of Tables
Final Data Sheet 6 Rev 2.0, 2012-07-31
EiceDRIVER™
Single IGBT Driver IC 1ED020I12-FT
1 Overview
Main Features
• Single channel isolated IGBT Driver
• For 600 V/1200 V IGBTs
• 2 A rail-to-rail output
• Vcesat-detection
• Active Miller Clamp
• Two level turn off
Product Highlights
• Coreless transformer isolated driver
• Galvanic Insulation
• Integrated protection features
• Suitable for operation at high ambient temperature
Typical Application
• Inverters for motor drives
• UPS systems
• Welding
Description
The 1ED020I12-FT is a galvanic isolated single channel IGBT driver in PG-DSO-16-15 package that provides an output current capability of typically 2A.
All logic pins are 5V CMOS compatible and could be directly connected to a microcontroller.
The data transfer across galvanic isolation is realized by the integrated Coreless Transformer Technology.
The 1ED020I12-FT provides several protection features like IGBT two level turn off, desaturation protection, active
Miller clamping and active shut down.
Product Name
1ED020I12-FT
Final Data Sheet
Gate Drive Current
±2 A
7
Package
PG-DSO-16-15
Rev 2.0, 2012-07-31
IN+, IN-, /RST
/FLT, RDY
Input Side
VCC1
Output Side
VCC2_H
EiceDRIVER
TM
1ED020I12-FT
DESAT
CLAMP
OUT
TLSET
GND2
CPU
IN+, IN-, /RST
/FLT, RDY
GND1
VCC1
VEE2_H
VCC2_L
EiceDRIVER
TM
1ED020I12-FT
DESAT
CLAMP
OUT
TLSET
GND2
VEE2_L
Figure 1 Typical Application
GND1
EiceDRIVER™
1ED020I12-FT
Overview
Final Data Sheet 8 Rev 2.0, 2012-07-31
EiceDRIVER™
1ED020I12-FT
Block Diagram
2 Block Diagram
VCC1 15 UVLO
&
IN+ 10
1
VCC1
IN11
VCC1
RDY 12
1
VCC1
/FLT 13
1
VCC1
/RST 14 delay delay
& delay
/RDY
DECODER RX
FLT
Q
S
R
1
RST
9
GND1
1
16
GND1
Figure 2 Block Diagram 1ED020I12-FT
TX RX
20MHz
OSC LOGIC
TX ENCODER
1ED020I12-FT
&
UVLO 5 VCC2
K4
2V
7 CLAMP
&
VCC2
VEE2
&
6 OUT
7V
VCC2
500µA
VEE2
4 TLSET
VCC2
FLT2
Q S
R
≥1
VEE2
1
VEE2
8
VEE2
K3
9V
2
3
DESAT
GND2
Final Data Sheet 9 Rev 2.0, 2012-07-31
3
EiceDRIVER™
1ED020I12-FT
Pin Configuration and FunctionalityPin Configuration
Pin Configuration and Functionality
3.1
Pin Configuration
13
14
15
16
9
10
11
12
5
6
7
8
1
2
3
4
Table 1 Pin Configuration
Pin No. Name Function
VEE2
DESAT
GND2
TLSET
Negative power supply output side
Desaturation protection
Signal ground output side
Two level set
VCC2
OUT
CLAMP
VEE2
Positive power supply output side
Driver output
Miller clamping
Negative power supply output side
GND1
IN+
IN-
RDY
/FLT
/RST
VCC1
GND1
Ground input side
Non inverted driver input
Inverted driver input
Ready output
Fault output, low active
Reset input, low active
Positive power supply input side
Ground input side
5
6
7
8
1
2
3
4
VEE2
DESAT
GND2
TLSET
VCC2
OUT
CLAMP
VEE2
Figure 3 Pin Configuration PG-DSO-16-15 (top view)
GND1
VCC1
/RST
/FLT
RDY
IN-
IN+
GND1
12
11
10
9
16
15
14
13
Final Data Sheet 10 Rev 2.0, 2012-07-31
EiceDRIVER™
1ED020I12-FT
Pin Configuration and FunctionalityPin Functionality
3.2
Pin Functionality
GND1
Ground connection of the input side.
IN+ Non Inverting Driver Input
IN+ control signal for the driver output if IN- is set to low. (The IGBT is on if IN+ = high and IN- = low)
A minimum pulse width is defined to make the IC robust against glitches at IN+. An internal Pull-Down-Resistor ensures IGBT Off-State.
IN- Inverting Driver Input
IN- control signal for driver output if IN+ is set to high. (IGBT is on if IN- = low and IN+ = high)
A minimum pulse width is defined to make the IC robust against glitches at IN-. An internal Pull-Up-Resistor ensures IGBT Off-State.
/RST Reset Input
Function 1: Enable/shutdown of the input chip. (The IGBT is off if /RST = low). A minimum pulse width is defined to make the IC robust against glitches at /RST.
Function 2: Resets the DESAT-FAULT-state of the chip if /RST is low for a time T
RST is used to ensure /FLT status output.
. An internal Pull-Up-Resistor
/FLT Fault Output
Open-drain output to report a desaturation error of the IGBT (/FLT is low if desaturation occurs)
RDY Ready Status
Open-drain output to report the correct operation of the device (RDY = high if both chips are above the UVLO level and the internal chip transmission is faultless).
VCC1
5 V power supply of the input chip
VEE2
Negative power supply pins of the output chip. If no negative supply voltage is available, all VEE2 pins have to be connected to GND2.
DESAT Desaturation Detection Input
Monitoring of the IGBT saturation voltage (V
CE
) to detect desaturation caused by short circuits. If OUT is high, V
CE is above a defined value and a certain blanking time has expired, the desaturation protection is activated and the
IGBT is switched off. The blanking time is adjustable by an external capacitor.
CLAMP Miller Clamping
Ties the gate voltage to ground after the IGBT has been switched off at a defined voltage to avoid a parasitic switch-on of the IGBT.During turn-off, the gate voltage is monitored and the clamp output is activated when the gate voltage goes below 2 V below VEE2.
Final Data Sheet 11 Rev 2.0, 2012-07-31
EiceDRIVER™
1ED020I12-FT
Pin Configuration and FunctionalityPin Functionality
GND2 Reference Ground
Reference ground of the output chip.
OUT Driver Output
Output pin to drive an IGBT. The voltage is switched between VEE2 and VCC2. In normal operating mode Vout is controlled by IN+, IN- and /RST. During error mode (UVLO, internal error or DESAT) Vout is set to VEE2 independent of the input control signals.
VCC2
Positive power supply pin of the output side.
TLSET Two Level Turn Off Adjust
Circuitry at TLSET adjust the two level turn off time with an external capacitor to GND2 and the two level voltage with an external Zener diode to GND2, for wave forms please see
Final Data Sheet 12 Rev 2.0, 2012-07-31
EiceDRIVER™
1ED020I12-FT
Functional DescriptionIntroduction
4 Functional Description
4.1
Introduction
The 1ED020I12-FT is an advanced IGBT gate driver for motor drives typical greater 10 kW. Control and protection functions are included to make possible the design of high reliability systems.
The device consists of two galvanic separated parts. The input chip can be directly connected to a standard 5 V
DSP or microcontroller with CMOS in/output and the output chip is connected to the high voltage side.
An effective active Miller clamp function avoids the need of negative gate driving in some applications and allows the use of a simple bootstrap supply for the high side driver.
A rail-to-rail driver output enables the user to provide easy clamping of the IGBTs gate voltage during short circuit of the IGBT. So an increase of short circuit current due to the feedback via the Miller capacitance can be avoided.
Further, a rail-to-rail output reduces power dissipation.
The device also includes an IGBT desaturation protection with a /FAULT status output.
A two-level turn-off feature with adjustable delay protects against excessive overvoltage at turn-off in case of overcurrent or short circuit condition. The same delay is applied at turn-on to prevent pulse width distortion.
A READY status output reports if the device is supplied and operates correctly.
+5V
SGND
IN+
RDY
FLT
RST
100n
VCC1
GND1
IN+
IN-
RDY
/FLT
/RST
VCC2
DESAT
CLAMP
OUT
TLSET
GND2
VEE2
1µ
+15V
10R
1µ
-8V
1k
10V 47p 220p
Figure 4 Application Example Bipolar Supply
4.2
Supply
The driver 1ED020I12-FT is designed to support two different supply configurations, bipolar supply and unipolar supply.
In bipolar supply the driver is typically supplied with a positive voltage of 15V at VCC2 and a negative voltage of
. Negative supply prevents a dynamic turn on due to the additional charge which
is generated from IGBT input capacitance times negative supply voltage. If an appropriate negative supply voltage is used, connecting CLAMP to IGBT gate is redundant and therefore typically not necessary.
For unipolar supply configuration the driver is typically supplied with a positive voltage of 15V at VCC2. Erratically dynamic turn on of the IGBT could be prevented with active Miller clamp function, so CLAMP output is directly connected to IGBT gate, refer to
.
Final Data Sheet 13 Rev 2.0, 2012-07-31
EiceDRIVER™
1ED020I12-FT
Functional DescriptionInternal Protection Features
+5V
SGND
IN+
RDY
FLT
RST
100n
VCC1
GND1
IN+
IN-
RDY
/FLT
/RST
Figure 5
4.3
Application Example Unipolar Supply
Internal Protection Features
VCC2
DESAT
CLAMP
OUT
TLSET
GND2
VEE2
1µ
+15V
1k
10R
10V 47p 220p
4.3.1
Undervoltage Lockout (UVLO)
To ensure correct switching of IGBTs the device is equipped with an undervoltage lockout for both chips, refer to
.
If the power supply voltage V
VCC1
of the input chip drops below V
UVLOL1
a turn-off signal is sent to the output chip before power-down. The IGBT is switched off and the signals at IN+ and IN- are ignored as long as V the power-up voltage V
UVLOH1
.
VCC1
reaches
If the power supply voltage V
VCC2
of the output chip goes down below V
UVLOL2
the IGBT is switched off and signals from the input chip are ignored as long as V
VCC2
reaches the power-up voltage V otherwise negative supply voltage range from 0 V to -12 V would not be possible.
UVLOH2
. VEE2 is not monitored,
4.3.2
READY Status Output
The READY output at pin /RDY shows the status of three internal protection features.
• UVLO of the input chip
• UVLO of the output chip after a short delay
• Internal signal transmission after a short delay
It is not necessary to reset the READY signal since its state only depends on the status of the former mentioned protection signals.
4.3.3
Watchdog Timer
During normal operation the internal signal transmission is monitored by a watchdog timer. If the transmission fails for a given time, the IGBT is switched off and the READY output reports an internal error.
4.3.4
Active Shut-Down
The Active Shut-Down feature ensures a safe IGBT off-state if the output chip is not connected to the power supply, IGBT gate is clamped at OUT to VEE2.
Final Data Sheet 14 Rev 2.0, 2012-07-31
EiceDRIVER™
1ED020I12-FT
Functional DescriptionNon-Inverting and Inverting Inputs
4.4
Non-Inverting and Inverting Inputs
There are two possible input modes to control the IGBT. At non-inverting mode IN+ controls the driver output while
IN- is set to low. At inverting mode IN- controls the driver output while IN+ is set to high, refer to
minimum input pulse width is defined to filter occasional glitches.
4.5
Driver Output
The output driver section uses only MOSFETs to provide a rail-to-rail output. This feature permits that tight control of gate voltage during on-state and short circuit can be maintained as long as the drivers supply is stable. Due to the low internal voltage drop, switching behaviour of the IGBT is predominantly governed by the gate resistor.
Furthermore, it reduces the power to be dissipated by the driver.
4.6
Two-Level Turn-Off
The Two-Level Turn-OFF introduces a second turn off voltage level at the driver output in between ON- and OFFlevel, refer to
. This additional level ensures lower V
CE
overshoots at turn off by reducing gate emitter voltage of the IGBT at short circuits or over current events. The V
GE
level is adjusting the current of the IGBT at the end two level turn off interval, the required timing is depending on stray inductance and over current at beginning of two level turn off interval.
Reference voltage level and hold up time could be adjusted at TLSET pin. The reference voltage is set by the required Zener diode connected between pin TLSET and GND2. The holdup time is set by the capacitor connected to the same pin TLSET and GND2.
The hold time can be adjusted during switch on using the whole capacitance connected at pin TLSET including capacitor, parasitic wiring capacitance and junction capacitance of Zener diode. When a switch on signal is given the IC starts to discharge C
TLSET
. Discharging C
TLSET
is stopped after 500 ns. Then Ctlset is charged with an internal charge current I charging C
TLSET
up to V
TLSET
. When the voltage of the capacitor C
ZDIODE
TLSET
exceeds 7 V a second current source starts
. At the end of this discharge-charge cycle the gate driver is switched on.
The time between IN initiated switch-on signal (minus an internal propagation delay of approximately 200 ns) and switch-on of the gate drive is sampled and stored digitally. It represents the two level turn off set time T
TLSET switch-off. Due to digitalization the tpdon time can vary in time steps of 50 ns.
during
If switch off is initiated from IN+, IN- or /RST signal, the gate driver is switched off immediately after internal propagation delay of approximately 200 ns and V
OUT
begins to decrease to the second gate voltage level.
For switch off initiated by DESAT, the gate driver switch off is delayed by desaturation sense to OUT delay, afterwards V
OUT
begins to decrease to the second gate voltage level.
For reaching second gate voltage level the output voltage V
OUT
is sensed and compared with the Zener voltage
V
ZDIODE
. When V
OUT interrupted and V
OUT
falls below the reference voltage V
ZDIODE
is adjusted to V
ZDIODE
of the Zener diode the switch off process is
. OUT is switched to VEE2 after the holdup time has passed.
The Two-Level Turn-OFF function cannot be disabled.
Final Data Sheet 15 Rev 2.0, 2012-07-31
EiceDRIVER™
1ED020I12-FT
Functional DescriptionMinimal On Time / Off Time
4.7
Minimal On Time / Off Time
The 1ED020I12-FT driver requires minimal on and off time for proper operation in the application. Minimal on time must be greater than the adjustable two level plateau time T
TLSET
, shorter on times will be suppressed by generating of the plateau time refer to
. Due to the short on time, the voltage at TLSET pin does not reach the comparator threshold; therefore the driver does not turn on. A similar principle takes place for off time.
Minimal off time must be greater than T
TLSET
; shorter off times will be suppressed, which means OUT stays on
. A two level turn off plateau cannot be shortened by the driver. If the driver has entered the turn
off sequence it cannot switch off due to the fact, that the driver has already entered the shut off mode. But if the driver input signal is turned on again, it will leave the lower level after T
TLSET
time by switching OUT to high, refer
4.8
External Protection Features
4.8.1
Desaturation Protection
A desaturation protection ensures the protection of the IGBT at short circuit. When the DESAT voltage goes up and reaches 9 V, the output is driven low, refer to
. Further, the FAULT output is activated. A programmable blanking time is used to allow enough time for IGBT saturation. Blanking time is provided by a highly precise internal current source and an external capacitor.
4.8.2
Active Miller Clamp
In a half bridge configuration the switched off IGBT tends to dynamically turn on during turn on phase of the opposite IGBT. A Miller clamp allows sinking the Miller current across a low impedance path in this high dV/dt situation. Therefore in many applications, the use of a negative supply voltage can be avoided.
During turn-off, the gate voltage is monitored and the clamp output is activated when the gate voltage goes below typical 2 V (related to VEE2). The clamp is designed for a Miller current up to 2 A.
4.8.3
Short Circuit Clamping
During short circuit the IGBTs gate voltage tends to rise because of the feedback via the Miller capacitance. An additional protection circuit connected to OUT and CLAMP limits this voltage to a value slightly higher than the supply voltage. A current of maximum 500 mA for 10 μs may be fed back to the supply through one of this paths.
If higher currents are expected or a tighter clamping is desired external Schottky diodes may be added.
4.9
RESET
The reset input has two functions.
Firstly, /RST is in charge of setting back the FAULT output. If /RST is low longer than a given time, /FLT will be
cleared at the rising edge of /RST, refer to
; otherwise, it will remain unchanged. Moreover, it works as
enable/shutdown of the input logic, refer to
.
Final Data Sheet 16 Rev 2.0, 2012-07-31
EiceDRIVER™
1ED020I12-FT
Electrical ParametersAbsolute Maximum Ratings
5 Electrical Parameters
5.1
Absolute Maximum Ratings
Note: Absolute maximum ratings are defined as ratings, which when being exceeded may lead to destruction of the integrated circuit. Unless otherwise noted all parameters refer to GND1.
Table 2
Parameter
Absolute Maximum Ratings
Positive power supply output side
Negative power supply output side
Maximum power supply voltage output side
(V
VCC2
- V
VEE2
)
Gate driver output
Gate driver high output maximum current
Gate & Clamp driver low output maximum current
Maximum short circuit clamping time
Positive power supply input side
Logic input voltages
(IN+,IN-,RST)
Opendrain Logic output voltage (FLT)
Opendrain Logic output voltage (RDY)
Opendrain Logic output current (FLT)
Opendrain Logic output current (RDY)
Pin DESAT voltage
Pin CLAMP voltage
Input to output isolation voltage (GND2)
Junction temperature
Storage temperature
Power dissipation, per input part
Power dissipation, per output part
Thermal resistance (Input part)
Thermal resistance (Output chip active)
ESD Capability
1) With respect to GND2.
Symbol
V
V
V
VCC2
VEE2 max2
V
OUT
I
OUT
I
OUT
t
CLP
V
VCC1
V
LogicIN
V
FLT#
V
RDY
I
FLT#
I
RDY
V
DESAT
V
CLAMP
V
ISO
T
J
T
S
P
D, IN
P
D, OUT
R
THJA,IN
R
THJA,OUT
V
ESD
Min.
-0.3
-12
–
Values
Max.
20
0.3
28
V
VEE2
-0.3
–
–
–
-0.3
-0.3
-0.3
-0.3
–
–
-0.3
-0.3
–
–
–
–
-1200
-40
-55
–
Unit
V
V
max2
+0.3 V
2.4
A
2.4
A
10
6.5
6.5
6.5
6.5
10
10
V
VCC2
+0.3
V
VCC2
+0.3
2)
1200
150
150
100
700
160
125
1.5
V
V
μs
V
V
V
V mA mA
V
V
V
°C
°C mW mW
K/W
K/W kV
– t = 2 µs t = 2 µs
–
–
–
–
Note /
Test Condition
1)
–
–
–
I
CLAMP/OUT
500 mA
=
3)
–
–
4)
@
T
A
= 25°C
@
T
A
= 25°C
@
T
A
= 25°C
@
T
A
= 25°C
Human Body
Model
5)
Final Data Sheet 17 Rev 2.0, 2012-07-31
EiceDRIVER™
1ED020I12-FT
Electrical ParametersOperating Parameters
2) May be exceeded during short circuit clamping.
3) With respect to VEE2.
4) Output IC power dissipation is derated linearly at 10 mW/°C above 62°C. Input IC power dissipation does not require derating. See
for reference layouts for these thermal data. Thermal performance may change significantly with layout and heat dissipation of components in close proximity.
5) According to EIA/JESD22-A114-B (discharging a 100 pF capacitor through a 1.5 k
Ω
series resistor).
5.2
Operating Parameters
Note: Within the operating range the IC operates as described in the functional description. Unless otherwise noted all parameters refer to GND1.
Table 3
Parameter
Operating Parameters
Symbol Values
Min.
Max.
Positive power supply output side
Negative power supply output side
V
VCC2
V
VEE2
V
max2
13
-12
20
0
Maximum power supply voltage output side
(
V
VCC2
-
V
VEE2
)
Positive power supply input side
Logic input voltages
(IN+,IN-,RST)
V
VCC1
V
LogicIN
–
4.5
-0.3
28
5.5
5.5
Pin CLAMP voltage
Pin DESAT voltage
Pin TLSET voltage
V
CLAMP
V
DESAT
V
TLSET
V
VEE2
-0.3
-0.3
-0.3
V
V
V
VCC2
2)
VCC2
VCC2
Ambient temperature
Common mode transient immunity
3)
T
A
-40
|D
V
ISO
/dt| –
105
50
1) With respect to GND2.
2) May be exceeded during short circuit clamping.
3) The parameter is not subject to production test - verified by design/characterization
Unit
V
V
V
V
V
V
V
V
°C kV/
μs
–
–
Note /
Test Condition
1)
–
–
–
@ 500 V
5.3
Recommended Operating Parameters
Note: Unless otherwise noted all parameters refer to GND1.
Table 4 Recommended Operating Parameters
Parameter
Positive power supply output side
Negative power supply output side
Positive power supply input side
1) With respect to GND2.
Symbol
V
VCC2
V
VEE2
V
VCC1
Value
15
-8
5
V
V
Unit
V
Note / Test Condition
1)
–
Final Data Sheet 18 Rev 2.0, 2012-07-31
EiceDRIVER™
1ED020I12-FT
Electrical ParametersElectrical Characteristics
5.4
Electrical Characteristics
Note: The electrical characteristics include the spread of values in supply voltages, load and junction temperatures given below. Typical values represent the median values at T
A
= 25°C. Unless otherwise noted all voltages are given with respect to their respective GND (GND1 for pins 9 to 16, GND2 for pins 1 to 8).
5.4.1
Voltage Supply
Table 5
Parameter
Voltage Supply
Symbol
UVLO Threshold Input Chip
V
UVLOH1
V
UVLOL1
V
HYS1
UVLO Hysteresis Input Chip
(
V
UVLOH1
-
V
UVLOL1
)
UVLO Threshold Output Chip
UVLO Hysteresis Output Chip
(
V
UVLOH1
-
V
UVLOL1
)
Quiescent Current Input Chip
V
UVLOH2
V
UVLOL2
V
HYS2
I
Q1
Min.
–
3.5
0.15
–
10.4
0.7
–
Quiescent Current Output Chip
I
Q2
–
12.0
11.0
0.9
7
Values
Typ.
4.1
3.8
–
–
–
Max.
4.3
12.6
–
–
9
4.5
6
Unit Note / Test Condition
V
V
V
V
V
V mA mA
–
–
–
–
–
–
V
VCC1
=5 V
IN+ = High,
IN- = Low
=>OUT = High,
RDY = High,
/FLT = High
V
V
VCC2
=15 V
VEE2
=-8 V
IN+ = High,
IN- = Low
=>OUT = High,
RDY = High,
/FLT = High
Final Data Sheet 19 Rev 2.0, 2012-07-31
EiceDRIVER™
1ED020I12-FT
Electrical ParametersElectrical Characteristics
5.4.2
Logic Input and Output
Table 6
Parameter
Logic Input and Output
Symbol
IN+,IN-, RST Low Input Voltage
IN+,IN-, RST High Input Voltage
IN-, RST Input Current
V
V
IN+L
,
IN-L
,
V
RSTL#
V
V
IN+H
IN-H
,
,
V
RSTH#
I
IN-
,
I
RST#
IN+ Input Current
RDY,FLT Pull Up Current
Min.
–
3.5
-400
I
IN+
,
I
PRDY
,
I
PFLT#
–
-400
Input Pulse Suppression IN+,
IN-
Input Pulse Suppression RST for ENABLE/SHUTDOWN
Pulse Width RST for Reseting FLT
FLT Low Voltage
RDY Low Voltage
T
MININ+
,
T
MININ-
T
MINRST
T
RST
V
FLTL
V
RDYL
30
30
800
–
–
–
Values
Typ.
–
Max.
1.5
Unit
V
Note /
Test Condition
–
–
–
–
–
40
40
-100
100
-100
–
400
–
–
–
–
300
300
V
μA
μA
μA ns ns ns mV mV
–
V
V
IN-
= GND1
RST#
= GND1
V
IN+
= VCC1
V
V
RDY
= GND1
FLT#
= GND1
–
–
–
I
SINK(FLT#)
= 5 mA
I
SINK(RDY)
= 5 mA
Final Data Sheet 20 Rev 2.0, 2012-07-31
EiceDRIVER™
1ED020I12-FT
Electrical ParametersElectrical Characteristics
5.4.3
Gate Driver
Table 7
Parameter
Gate Driver
Symbol
High Level Output
Voltage
High Level Output Peak
Current
Low Level Output
Voltage
Low Level Output Peak
Current
V
OUTH1
V
OUTH2
V
OUTH3
V
OUTH4
I
OUTH
V
OUTL1
V
OUTL2
V
OUTL3
V
OUTL4
I
OUTL
–
–
–
–
1.5
Min.
V
VCC2
-1.2
V
VCC2
-2.5
V
VCC2
-9
–
-1.5
Values
Typ.
V
VCC2
-0.8
V
VCC2
-2.0
V
VCC2
-5
V
VCC2
-10
-2.0
–
–
–
–
Max.
–
Unit
V
VEE2
+0.04
V
VEE2
+0.3
V
VEE2
+2.1
V
VEE2
+7
2.0
V
VEE2
+0.09
V
V
VEE2
+0.85
V
V
VEE2
+5.0
V
– V
– A
V
V
V
V
A
Note / Test Condition
I
OUTH
= -20 mA
I
OUTH
= -200 mA
I
OUTH
= -1 A
I
OUTH
= -2 A
IN+ = High, IN- = Low;
OUT = High
I
OUTL
= 20 mA
I
OUTL
= 200 mA
I
OUTL
= 1 A
I
OUTL
= 2 A
IN+ = Low, IN- = Low;
OUT = Low,
V
V
VCC2
=15 V,
VEE2
=-8 V
5.4.4
Active Miller Clamp
Table 8
Parameter
Active Miller Clamp
Symbol Values Unit
Min.
Typ.
Max.
Low Level Clamp
Voltage
V
CLAMPL1
V
CLAMPL2
V
CLAMPL3
I
CLAMPL
–
–
–
V
VEE2
+0.03
V
VEE2
+0.3
V
VEE2
+1.9
–
V
VEE2
+0.08 V
V
VEE2
+0.8
V
V
VEE2
+4.8
V
– A Low Level Clamp
Current
2
Clamp Threshold
Voltage
V
CLAMP
1.6
2.1
2.4
1) The parameter is not subject to production test - verified by design/characterization
V
Note / Test Condition
I
OUTL
= 20 mA
I
OUTL
= 200 mA
I
OUTL
= 1 A
1)
Related to VEE2
Final Data Sheet 21 Rev 2.0, 2012-07-31
EiceDRIVER™
1ED020I12-FT
Electrical ParametersElectrical Characteristics
5.4.5
Short Circuit Clamping
Table 9
Parameter
Short Circuit Clamping
Symbol
Clamping voltage (OUT)
(
V
OUT
-
V
VCC2
)
Clamping voltage
(CLAMP) (
V
VCLAMP
-
V
VCC2
)
V
CLPout
Min.
–
V
CLPclamp
–
Clamping voltage (CLAMP)
V
CLPclamp
–
Values
Typ.
0.8
Max.
1.3
1.3
0.7
–
1.1
Unit
V
V
V
Note / Test Condition
IN+=High, IN- = Low,
OUT = High
I
OUT
= 500 mA
(pulse test,
t
CLPmax
= 10 μs)
IN+ = High, IN- = Low,
OUT = High
I
CLAMP
= 500 mA
(pulse test,
t
CLPmax
= 10 μs)
IN+ = High, IN- = Low,
I
OUT = High
CLAMP
= 20 mA
5.4.6
Dynamic Characteristics
Dynamic characteristics are measured with
V
VCC1
= 5 V
VCC2
= 15 V and
V
VEE2
= -8 V.
Table 10 Dynamic Characteristics
Parameter Symbol Unit
Min.
1.5
Values
Typ.
1.75
Max.
2.0
μs IN+, IN- input to output propagation delay ON and
OFF
IN+, IN- input to output propagation delay distortion
(
T
PDOFF
-
T
PDON
)
IN+, IN- input to output propagation delay ON variation due to temp
IN+, IN- input to output propagation delay OFF variation due to temp
IN+, IN- input to output propagation delay distortion variation due to temp
(
T
PDOFF
-
T
PDON
)
Rise Time
T
PDON
T
PDISTO
T
PDONt
T
PDOFFt
T
PDISTOt
T
RISE
-40
–
–
–
10
-10
–
–
–
30
20
200
230
25
60 ns ns ns ns ns
150 400 800 ns
Note / Test Condition
C
TLSET
= 0,
T
A
= 25°C
C
TLSET
= 0,
T
A
= 25°C
1)
C
TLSET
= 0
C
TLSET
= 0
C
TLSET
=0
C
V
LOAD
= 1 nF,
L
10%,
V
H
90%
C
LOAD
= 34 nF
V
L
10%,
V
H
90%
Final Data Sheet 22 Rev 2.0, 2012-07-31
EiceDRIVER™
1ED020I12-FT
Electrical ParametersElectrical Characteristics
Table 10
Dynamic Characteristics (cont’d)
Parameter Symbol
Fall Time
T
FALL
Min.
10
Values
Typ.
20
Max.
40
Unit
ns
100 250 500 ns
1) The parameter is not subject to production test - verified by design/characterization
5.4.7
Desaturation Protection
Note / Test Condition
C
V
LOAD
= 1 nF
L
10%,
V
H
90%
C
LOAD
= 34 nF
V
L
10%,
V
H
90%
Table 11 Desaturation Protection
Parameter Symbol
Blanking Capacitor Charge
Current
I
DESATC
Min.
450
Blanking Capacitor
Discharge Current
I
DESATD
11
Desaturation Reference
Level
Desaturation Sense to OUT
TLTO
Desaturation Sense to FLT
Low Delay
Desaturation Low Voltage
V
DESAT
T
DESATOUT
T
DESATFLT
V
DESATL
8.5
–
–
40
5.4.8
Active Shut Down
Values
Typ.
500
Max.
550
15
9
250
–
70
–
9.5
320
2.25
110
V ns
μs mV
Unit
μA mA
Note / Test Condition
V
V
VCC2
=15 V,
VEE2
=-8 V
V
DESAT
= 2 V
V
V
VCC2
=15 V,
VEE2
=-8 V
V
DESAT
=6 V
V
VCC2
=15 V
V
C
OUT
=90%
LOAD
= 1 nF
I
V
FLT #
=10%;
FLT #
=5 mA
IN+=Low, IN-=Low,
OUT=Low
Table 12 Active Shut Down
Parameter Symbol
Active Shut Down Voltage
1) With reference to VEE2
V
ACTSD
1)
Min.
–
Values
Typ.
–
Max.
2.0
Unit
V
Note /
Test Condition
I
V
OUT
= -200 mA,
CC2
open
Final Data Sheet 23 Rev 2.0, 2012-07-31
EiceDRIVER™
1ED020I12-FT
Electrical ParametersElectrical Characteristics
5.4.9
Two-level Turn-off
Table 13 Two-level Turn-off
Parameter Symbol
External reference voltage range
(Zener-Diode)
Reference Voltage for setting two-level delay time
Current for setting two-level delay time and external reference voltage (Zener-Diode)
External Capacitance Range
V
ZDIODE
V
TLSET
I
TLSET
C
TLSET
Min.
7.5
6.6
420
0
Values
Typ.
–
Unit
Max.
V
CC2
-0.5
V
7 7.3
V
500 550 μA
Note /
Test Condition
–
–
V
TLSET
= 10 V
– 220 pF –
Final Data Sheet 24 Rev 2.0, 2012-07-31
EiceDRIVER™
1ED020I12-FT
Timing DiagramsElectrical Characteristics
6 Timing Diagrams
All diagrams related to the Two-level switch-off feature
IN+
50%
OUT
50%
T
PDON
T
PDOFF
Figure 6 Propagation Delay, Rise and Fall Time
IN+
IN-
/RST
OUT
Figure 7 Principle Switching Behavior
IN+
V
ZDIODE
TLSET
T
PD
T
ADJ1
T
TLSET
OUT
T
PDONADJ
Figure 8 Typical Switching Behavior
T
PD
T
TLFALL
90%
10%
T
RISE
V
TLSET
, typ. 7V
T
TLSET
T
FALL
V
ZDIODE
Final Data Sheet 25 Rev 2.0, 2012-07-31
EiceDRIVER™
1ED020I12-FT
Timing DiagramsElectrical Characteristics
IN+
T
PDON
OUT
V
DESAT
typ. 9V
DESAT
T
DESATOUT
/FLT
/RST
T
DESATFLT
T
TLSET
T
DESATOUT
T
TLSET
>T
RSTmin
T
DESATFLT
Figure 9 DESAT Switch-OFF Behavior
IN+
TLSET
T
TLSET
T
TLSET
OUT
Figure 10 Short Switch ON Pulses
T
PD
T
TLSET
T
PDON
T
PDOFF
T
PDON
T
PD
Final Data Sheet 26 Rev 2.0, 2012-07-31
IN+
TLSET
T
PD
T
TLSET
OUT
T
PDOFF
T
PDON
Figure 11 Short Switch OFF Pulses
IN+
TLSET
T
PD
OUT
T
TLSET
T
PDON
T
TLSET
T
PDOFF
T
TLSET
T
PDOFF
T
TLSET
T
PDOFF
EiceDRIVER™
1ED020I12-FT
Timing DiagramsElectrical Characteristics
T
PD
T
TLSET
T
PDOFF
T
PDON
T
TLSET
T
PDOFF
T
PD forced turn off after three consecutive on -cycles
T
PDON
Figure 12 Short Switch OFF Pulses, Ringing Surpression
Final Data Sheet 27 Rev 2.0, 2012-07-31
EiceDRIVER™
1ED020I12-FT
Timing DiagramsElectrical Characteristics
V
UVLOH2
VCC2
IN+
OUT
I
DESAT
RDY
Figure 13 VCC2 Ramp Up
VCC2
V
V
UVLOH2
UVLOL2
T
PDD
IN+
TLSET
Vz
OUT
T
PDON
T
PDD
RDY
/FLT
Figure 14 VCC2 Ramp Down and VCC2 Drop
T
TLSET
T
PDON
T
PDD
T
PDOFF
Final Data Sheet 28 Rev 2.0, 2012-07-31
EiceDRIVER™
1ED020I12-FT
Timing DiagramsElectrical Characteristics
5
4
3
2
1
0
0 50
C
100
TLSET
[pF]
Figure 15 Typical
T
TLSET
Time over
C
TLSET
Capacitance
150 200
Final Data Sheet 29 Rev 2.0, 2012-07-31
7 Package Outlines
EiceDRIVER™
1ED020I12-FT
Package OutlinesElectrical Characteristics
DIM c
D
E
E1 e
N
L h
Ĭ
A
A1 b
0.12
0.35
0.23
10.21
10.16
7.42
MIN
-
MILLIMETERS
MAX
2.64
0.29
0.48
0.32
10.47
10.41
7.59
1.27 BSC
16
0.61
0.25
0°
1.02
0.41
8°
MIN
-
0.005
0.014
0.009
0.402
0.400
0.292
0.024
0.010
0°
INCHES
MAX
0.104
0.011
0.019
0.013
0.412
0.410
0.299
0.050 BSC
16
0.040
0.016
8°
Figure 16
PG-DSO-16-15 (Plastic (Green) Dual Small Outline Package)
Final Data Sheet 30
DOCUMENT NO.
Z8B00166131
SCALE
0
0 1.0
1.0
2mm
EUROPEAN PROJECTION
ISSUE DATE
31.07.2012
REVISION
02
Rev 2.0, 2012-07-31
EiceDRIVER™
1ED020I12-FT
Application NotesReference Layout for Thermal Data
8 Application Notes
8.1
Reference Layout for Thermal Data
The PCB layout shown in
represents the reference layout used for the thermal characterisation. Pins 9 and 16 (GND1) and pins 1 and 8 (VEE2) require ground plane connections for achiving maximum power dissipation. The 1ED020I12-FT is conceived to dissipate most of the heat generated through this pins.
Top Layer
Bottom Layer
Figure 17 Reference Layout for Thermal Data (Copper thickness 102 μm)
8.2
Printed Circuit Board Guidelines
Following factors should be taken into account for an optimum PCB layout.
• Sufficient spacing should be kept between high voltage isolated side and low voltage side circuits.
• The same minimum distance between two adjacent high-side isolated parts of the PCB should be maintained to increase the effective isolation and reduce parasitic coupling.
• In order to ensure low supply ripple and clean switching signals, bypass capacitor trace lengths should be kept as short as possible.
• Lowest trace length for VEE2 to GND2 decoupling could be achieved with capacitor closed to pins 1 and 3.
Final Data Sheet 31 Rev 2.0, 2012-07-31
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
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