BD745/A/B/C
SavantIC Semiconductor
Product Specification
BD745/A/B/C
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PN package
·Complement to type BD746/A/B/C
·High current capability
·High power dissipation
·
APPLICATIONS
·For use in power linear and
switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
BD745
VCBO
VCEO
VEBO
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
BD745A
VALUE
50
Open emitter
70
BD745B
90
BD745C
110
BD745
45
BD745A
UNIT
Open base
60
BD745B
80
BD745C
100
Open collector
V
V
5
V
IC
Collector current
20
A
ICM
Collector current-peak
25
A
IB
Base current
7
A
PC
Collector power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
TC=25
115
Ta=25
3.5
W
SavantIC Semiconductor
Product Specification
BD745/A/B/C
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD745
V(BR)CEO
Collector-emitter
breakdown voltage
MIN
TYP.
MAX
UNIT
45
BD745A
60
IC=30mA; IB=0
V
BD745B
80
BD745C
100
VCEsat-1
Collector-emitter saturation voltage
IC=5 A;IB=0.5 A
1.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=20 A;IB=5 A
3.0
V
VBE -1
Base-emitter on voltage
IC=5A ; VCE=4V
1.0
V
VBE -2
Base-emitter on voltage
IC=20A ; VCE=4V
3.0
V
ICEO
Collector cut-off current
0.1
mA
VCE=50V; VBE=0
TC=125
VCE=70V; VBE=0
TC=125
VCE=90V; VBE=0
TC=125
VCE=110V; VBE=0
TC=125
0.1
5.0
0.1
5.0
0.1
5.0
0.1
5.0
mA
0.5
mA
BD745/A
VCE=30V; IB=0
BD745B/C
VCE=60V; IB=0
BD745
BD745A
ICBO
Collector cut-off current
BD745B
BD745C
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=4V
40
hFE-2
DC current gain
IC=5A ; VCE=4V
20
hFE-3
DC current gain
IC=20A ; VCE=4V
5
150
Switching times resistive load
td
Delay time
tr
Rise time
ts
Storage time
tf
Fall time
IC=5 A;IB1=-IB2=0.5 A
VBE(off)=-4.2V; RL=6A
tp=20µs
0.02
µs
0.35
µs
0.5
µs
0.4
µs
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
MAX
1.1
2
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
BD745/A/B/C
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