Page 1 PRELMINARY DATA SHEET MOS INTEGRATED CIRCUIT

Page 1 PRELMINARY DATA SHEET MOS INTEGRATED CIRCUIT
PRELIMINARY DATA SHEET
NEC 7 MOS INTEGRATED CIRCUIT
MC-454AD644
4 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE
UNBUFFERED TYPE
Description
The MC-454A644 is a 4,194,304 words by 64 bits synchronous dynamic RAM module on which 16 pieces of 16 M
SDRAM : ,PD4516821 are assembled.
This module provides high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
+ 4,194,304 words by 64 bits organization
+ Clock frequency and Clock access time
Family CAS latency Clock frequency Clock access time Power consumption (MAX)
(MAX) (MAX)
Active Standby
MC-454AD644-A10 С! = 3 100 MHz 8ns 4,550 mW 115.2mW
CL=2 67 MHz 9ns (CMOS level input )
MC-454AD644-A67 CL=3 67 MHz 9ns 4,032 mW
CL=2 | 9ns
MC-454AD644-A12 CL =3 83 MHz ns 3.974 mW
CL=2 54 MHz 12ns
« Fully Synchronous Dynamic RAM, with ait signals referenced to a positive clock edge
+ Pulsed interface
e Possible to assert random column address in every cycle
e Dual internal banks controlled by BAO (Bank Select)
e Programmable burst-length : 1, 2, 4, 8 and Fuli Page
+ Programmable wrap sequence (Sequential / interleave)
e Programmable /CAS tatency (2, 3)
» Automatic precharge and controlled precharge
» CBR (Auto) refresh and self refresh
e Alf I/Os have 10Q +10 % of series resistor
+ Single 3.3 V 10.3 Y power supply
» LVTTL compatible
2,048 refresh cycles/32 ms
+ Burst termination by Burst Stop command and Precharge command
+ 168-pin dual in-line memory module (Pin pitch = 1.27 mm)
+ Unbuffered type
+ Serial PD
The information in this document is subject to change without notice.
Document No. — M11901EJ3VODS00 (3rd edition) The mark * shows major revised points.
Date Published ‚January 1997 NS ONEC Corporation 1996
Printed in Japan
67
NEC nn MC-454AD644
Ordering Information
Clock frequency
Part number MHz (MAX.) Package Mounted devices
MC-454AD644F-A10 100 MHz | 168-pin Dual In-line Memory Module 16 pieces of
HPD4516821G5
Socket Tv
© ype) (400 mil TSOP (11)
Edge connector : Gold plated [Double side)
16 pieces of
APD4516821G5-PC
(400 mil TSOP (11)
SORAM Lite [Double side]
16 pieces of
uPD4516821G5
(400 mit TSOP (1)
[Double sida!
MC-454AD644F-A67 67 MHz 29.21 mm (1.15 inch) height
MC-454AD644F-A12 83 MHz
68
NEC
Pin Configuration
168-pin Dual In-tine Memory Module Socket Type (Edge connector : Gold plated)
[ MC-454AD644F ]
U O
SEREIEA (\essessssgs
NO |
=O AQ
0 BAQ(A11}
-— O NC
ГО Мес
\SSeSestSNSEDENENERNN Sas sscaas-Usee-oasons |
MC-454AD644
. Address Inputs
[ How : AO - A10, Column : AQ - A8]
AO - A10
BAO (A11)
000 - DOS3
CLKO - CLK3
CKEQ, CKE1
/CS0 - /CS3
/RAS
/CAS
WE
DGM80 - DOMB7
SAD - SA2
SDA
SCL
Vee
Vss
NC
: SDRAM Bank Select
- Data Inputs/Qutputs
: Clock Input
: Clock Enable Input
: Chip Select Input
: Row Address Strobe
: Column Address Strobe
: Write Enable
: DG Mask Enable
: Address input for EEPROM
: Serial Data ИО юг РО
: Clock Input for PD
: Power Supply
- Ground
: No Connection
69
NEC MC-454AD644
Block Diagram
MANE Dee hw mmr mia mas se tra e pa ma
СОС TT St O A 1C520--—- J, Do Ис
; . | ! Yes aa ad eee _
DGMBO © + y y Dove + Li
DO 20-MM--JogoDAM CS АМЕР Ipgo DOM /CS ME DQ 180A =| DO DOM /CS АЕ | IpqpDQM CS ME
DG 3 ow WA DO ! DO 1 DQ 18 0AM DG 1 _—+DQ 1
DQ 1 oA DQ 2 DG 2 DO +7 0-1 DQ DO?
DO 7 A-| DO 4 DO 4 DO 23 0-Ai--1 DO 4 ——DQ 4
DO 6 0--VA-=1 DO 3 DO 5 DQ 22 0+AVir=| DO 5 —1DQ 5
DO 5 VA--1 DO 5 . 1506 DO 21 a=AM--1 DO 6 — pas
DQ 4 >e-W--100 7 DQ7 DO 20 0«MA-=1 DO 7 Apa?
| | | | | | |
DQMB1 © ca DQMB3 O + - :
AA Ld р |
ра 11 2- ЛА), +1 ОО 0 DOM CS MEL IngoDOM CS ME DQ 27 or po 9 DOM CS MEL. Ingo DOM ÆS WE
DQ 10 oe Ap DO 1 ——{pQ1 DQ 26 =A DQ 1 A DQ +
DQ 9 VADO —4pQ 2 DO 25 0-1 DQ 2 — Da 2
DO 8 >-MA--1DO 3 01 —4DQ 3 Da DQ 24 0-AA-=1 XQ 3 03 1093 44
DO 15 >A--I DO 4 — {DO 4 DQ 31 0=-A--1 DCI 4 — DQ 4
DQ 14 oe О 5 L-1DQ 5 DQ 30 0«VA--1 DQ 5 dios
DQ 130- MAI DO 5 —4DQ 6 DO 29 0<AA-=-1DO 6 -— O 6
DQ 12 >e-4//,-1 DO 7 —JDQ 7 DQ 28 oA DQ 7 --1 07
| o
DOMBA 0---——— + | | DOMB6 © + ps | |
y LU 3 | | E ii +: } i
DQ 35 >-A--4DO 7 DOM CS MEL DQO0 DOM CS WE DO 51 0-MA--1 DO OM ÉS MEL | Dao DOM ¡CS AWE
DO 34 CA DO | L— DO 1 РО 50 ож Аж] DO 1 1001
DO 33 17,1 DO 2 DO 2 DO 490— DG 2 LDQ 2
DO 32 ra AMA DO 3 мм Оо Г Ш DQ 3 012 DO 48 DA DO 3 Dé — Da 3 Dt4
DO 39 +1 DO 4 -— 004 DO 55 0<1-—| DO 4 LDQ 4
DOSBo-M-4DQ5 b- DOS DQ 54 0+AM- = DO 5 —|DQ 5
DQ 37 =-AA--IDO 6 —1DQ6 DQ 53 0—Vi/A--|DA 6 -— DO 6
DQ 36 o-MA--41DO 7 --DQ 7 DO 2 0=MAA--IDO 7 |e РО т
| | | |
DQMBS — + | e телом | DOMB7 0 + J !
I Ea Tr id bo
DQ 4a cpa ~ DO DOM CS MEL nag DOM /CS /WE DQ 59 o=-A-~lDQoPOM /CS WEL Ingo DOM /CS AWE
DO 42 0 100 1 — 1001 БО 58 о AA DQ | --]DQ 1
DQ 41 o M--DO 2 .—1DQ 2 РО 57 ож Ара О |--- 002
DO 47 04 AA DO 4 100 4 DO 63 0 AA-=1DO 4 -—1DQ 4
DQ 46 oA DQ 5 DQ 5 DQ 62 oMA--1DQ 5 — 1005
DO 456041 ADOS | DOG БО 61 о- АМ РО 6 — 100 6
DQ 43 0--MA-- DO 7 ..-DQ 7 DO 69 >-- VA DQ 7 DOT
лы. . CLK: D2, D6
SERIAL PD cLKO 0-4 WWCLK:DO.D4 cikeo4 и”
| Ae CLK : D1, D5 Wi CLK: D3. D7
SCL —— [+ SDA
AC Al A AOA . 1 a CLK : 010, D14
| CLK1 оф Wi СМК: 08, 012 орка 04
| Are CLK : 09, D13 We CLK : D13, D15
ЗАО ЗА! БА?
АО - А0 О-о АО - A19: DO - DIS HAAS Or mm > /RAS: DO - D15 A
3 1040
BAQ Om ze AU: DO - D15 ¡CAS O ae (OAS: DO - 015 СКЕ! -= CKE: 08-015
Мсс ©- eT DG - {15 СКЕОС—- ен CKE: DO - D7
V SS CO LIT „еее 0. [1 В
Remarks 1. The value of alt resistors is 10 Q except CKET.
2. DO-D15: yPD4516821 (1M word x 8 bits x 2 banks)
70
NEC MC-454AD644
Electrical Specifications (Preliminary)
» Ali voitages are referenced to Vss (GND).
e After power up, wait more than 100 us and then, execute power on sequence and auto refresh before proper device
operation is achieved.
Absolute Maximum Ratings
Parameter Symbol Condition Ratíng Unit
Voltage on power supply pin relative to GND Vee —1.0to +46 V
Voltage on input pin relative to GND \т —1.0 10 +4.6 y
Short circuit output current lo 50 mA
| Power dissipation Po 16 Ww
Operating ambient temperature TA Oto +70 °C
Storage temperature Tstg —55 to +125 °С
Caution Exposing the device to stress above those listed in Absolute Maximum Ratings couid cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability. |
Recommended Operating Conditions
Parameter Symbol Condition MIN. TYP. MAX. | Unit
Supply voltage vee 3.0 3.3 3.6 \
High level input voltage Vin 2.0 4.6 \
Low level input voltage Vi 0.3 | +0.8 \
Operating ambient temperature TA 0 70 °C
Capacitance (Ta = 25°C, f = 1 MHz)
Sarameter : Symbol Test condition MIN. TYP. MAX. Unit
Input capacitance Cu | AO- A10, BAO(A11), /RAS, 80 pF
/CAS, WE
Се CLKO - CLK3 36
Cia CREO, CKE1 50
Cia /CS0 - /C83 34
Cis DQMBO -DQMB7 15
Data input/output capacitance Сю | DQO - DOES | 15 | pr
71
NEC | MC-454AD644
DC Characteristics (Recommended Operating Conditions unless otherwise noted)
Parameter Symbo Test condition | Grade | MIN. | MAX. | Unit | Notes
Operating current - leer | Burst tength =1 CAS lateney =2 | -A10 864 | mA 1
tac 2 IRCHAIN, -AB7 880
lo= OMA -A12 B64
ICAS latency = 3 | -A10 804
-A67 920
-A12 864
Precharge standby current in| lccaP | CKE < Virmax), ск = 15 пб 48 mA
power down mode [ccaPS | CKE < Virmax,, tor = 0 32
Precharge standby current in| iccoN | CKE 2 Vian, fox = 15 ns, /CS > Vikan), 400 | mA |
non power down mode input signals are changed one time during 30 ns.
lccaNS | CKE 2 Ving), tok = оо cu 96
input signals are stable.
Active standby current in locsP | CKE < Viumax, tox = 15 ns | 48 | mA
power down made lecsPS | CKE < Vamax., tox = 0 32
Active standby current in local JOKE 2 Vigan, tox = 15 ns, /CS > Virus, -A10 | 448 mA
Input signals are changed one time during 30 ns. -A67 480
-A12 448
lecaNS | CKE 2 Vipin, tok = 0 160
Input signals are stable. |
Operating current | jeca |tcxz terne) | ICAS tatency = 2 | -A10 1,024 | mA 2
(Burst mode) to= OMA -AG7 1.040
-A12 B64
¡CAS latency = 3 | -A10 1,264
-A67 1.120
— | -A2 1,104
Refresh current Icos -A10 | 944 | mA | 3
-A67 960
"А12 944
Self refresh current le |CKE <0.2V 32 | mA
Input leakage current ly | Vr= 0 to 3.6 V, Ait other pins not under test = 0 V —80 | +80 | нА
input leakage current (CKE1) -500 | +500 | HA
Output leakage current low | Dour is disabled, Vo =0 to 3.6 V -10 | +10 | pA
High level output voltage Vox |lo=-2.0mA 2.4 М
Low level output voltage Vo |lo=+2.0mA 04 | у
Notes 1. lcci depends on output loading and cycle rates. Specified values are obtained with the output open. In
addition to this, lcc: is measured on condition that addresses are changed only one time during tex.
2. lcca depends on output loading and cycle rates. Specified values are obtained with the output open. tn
addition to this, leca is measured on condition that addresses are changed only one time during toxin.
3. lces is measured on condition that addresses are changed only one time during tckmin..
72
NEC. MC-454AD644
AC Characteristics (Recommended Operating Conditions unless otherwise noted)
AC Characteristics Test Conditions
+ ÂC measurements assume {T= 1 ns,
e Reference level for measuring timing of input signals is 1.4 V. Transition times are measured between Vin
and Vi.
elf tr is longer than 1 ns, reference level for measuring timing of input signals is Vino) and Vitimaxs.
e Ân access time is measured at 1.4 V.
tex
ар — —
e Ae E
2.0 М --— a né -
CLK 1.4 v NS
0.8 Y A
tseTur | HOLD
so res tai ie 7
Input 1.4 \ a ee A
08 \ ——
Qutput
73
NEC _ MC-454AD644
Synchronous Characteristics
Parameter Symbol -A10 -AB7 -A12 Unit | Note
MIN. | MAX. | MIN. | MAX. | MIN. | MAX.
Clock cycle time ICAS latency=3| tes | 10 15 12 | ns
/CAS fatency =2| or 15 15 18 ns
Access time fram CLK /CAS latency = 3 taca | 8 3 9 ns 1
ICAS latency =2| ta 9 8 12 ns 1
CLK high level width teu 3.5 4 4 ns
CLK low level width toi, 3.5 4 4 ns
Data-out hoid time tou 4 3 4 ns 1
Data-out low-impedance time e 0 0 0 ns
Data-out high-impedance time ¡CAS tatency = 3) — taza 3 8 3 8 3 8 ns
fCAS latency = 2 1422 3 9 3 8 3 11 ns
Data-in setup time tos | 2.5 3 3 ns
Data-in hold time ton 1 1.5 1.5 ns
Address setup time tas 2.5 3 3 ns
Address hold time tax 1 1.5 1.5 ns
CKE setup time ‘ска 2.5 3 3 ns
CKE hold time toa 1 1.5 1.5 ns
CKE setup time (Power down exit) 1ск5Р 2.5 3 3 ns
Command (/CS0, /CS2, /RAS, /CAS, /WE, toms 2.5 3 3 ns
DQMBO - DQMB7) setup time
Command (/C50, /CS2, /RAS, /CAS, /WE, tema 1 15 15 ns
DOMBO - DOMB?7) hold time
Note 1. Output load
1.4 \
>
Z=500 > 509
Output =--—) y= +
| | = 50 pr
74
NEC MC-454AD644
Asynchronous Characteristics
Parameter : Symbol -A10 -A67 -A12 | Unit | Note
| | MIN. | MAX. | MIN. | MAX. | MIN. | MAX.
REF to REF/ACT command period tac | 100 105 102 ns
ACT to PRE command period tas | 60 120000] 75 [120000] 72 [120000] ns
PRE to ACT command period tar 30 30 30 ns
Delay time ACT to READ/WRITE command taco 30 | 30 30 ns
ACT(0) to ACT{1} command period trac 20 30 24 ns
Data-in to PRE command period top. 10 | 15 12 ns
Data-in to ACT(REF) command period] /CAS latency = 3| tons |2CLK+| 20LK+ 20LK+ ns
30 30 30
(Auto precharge) ¡CAS lateney =2| tom? |1CLK+] 1CLK+ 1CLK+| | ns
30 | 30 30
Mode register set cycle time | tisc 20 20 20 ns
Transition time tr 1 30 | 1 30 1 30 ns
Refresh time tner 32 32 32 ms 1
Note 1. 2,048 rows
75
NEC MC-454AD644
x Serial PD (1/2)
Byte No. Function Described Hex | Bit7 | Git6 | Gt5 | Bt4 | Виз | 82 | 61 | Bito | Notes
0 | Defines the number of bytes written into | 80H | 1 | 0 | 0 | 0 | 0 | 0 | 0 | 0 |128bytes
serial PD memory :
1 Total number of bytes of serial PO memory | 08H | о | о | о | о | 1 | о | o | o |256bytes
2 Fundamental memory type Jom} oJ ol ooo] +t] oo] o |SDRAM
3 Number of rows овн 6 | 0 | o | o | 1 | 0 | 1 } + [1trows
4 | Number of columns oH | o | 0 | 0 | 0 | + | о | 0 | 1 |Scolumns
5 | Number of banks о2н | о | 0 | 0 | o | о | о | 1 | 0 |2banks
6 Data width 40H | q 1 о | © 0 o | 0 | 0 [64bits
7 Data width (continued) 00H 0 | O o 0 О 0 D 0 FO
в | Voltage interface 01H | 0 | 0 | o | о | о | o | | 1 [wm
9 CL = 3 Cycie time {-A10) АОН i 0 1 0 0 0 0 0 10 ns
(-A67) FOH | 1 1 1 1 0 0 0 0 | 15ns
(-A12) CoH | 1 1 0 | 0 | 0 | 0 | 0 | 0 |12ns
10 | CL =3 Access time | -A10) вон | + | о | о | о | о | o | © | o |ans
(-A67) 90H | + о | о 1 o |ol|o0 |olans
{-A12) 90H | 1 0 0 1 0 0 0 0 |ons
11 | DIMM configuration type оон | о | о | оо | о | о | 0 | 0 [None
12 Refresh rate/type 80H 1 о 0 o О 0 0 0 | Normal
13 SDRAM width 08H 0 0 о 0 1 0 0 Q xa
14 Error checking SDRAM width 00H 0 © 0 0 0 0 0 0 | None
15 Minimurn clock delay 01H 0 0 0 0 0 0 0 1 1 clock
16 | Burst length supported 8FH | 1 о | о | о | 1 1 1 1 | 1,2. 4, 8, Е
17 Number of barks on each SDRAM 02H 0 0 0 0 0 a 1 0 2 banks
18 /CAS latency supported CEH 0 9 0 0 0 1 1 O 12,3
19 /CS tatency supported 01H 0 Q 0 0 0 Q 0 1 0
20 /WE latancy supported 01H 0 0 0 0 0 0 0 1 0
21 SDRAM module attributes 00H ô& | O a 0 0 0 0 0
22 SORAM devica attributes : General OEH 0 0 0 0 1 1 1 0
23 | CL = 2 Cycle time (-A10) FOH | 1 1 1 1 0 o | 0 0 | 15ns
(-A67} FOH 1 1 1 1 0 0 0 0 15 ns
(-A12) 39H | O 0 1 1 0 о [о 0 | 18 пс
24 CL = 2 Access time (-A10} 30H 1 0 0 1 0 0 0 0 9 ns
(-A67) 90H | 1 0 0 1 0 0 о | о |9ns
(-A12) сон | 1 1 0 0 0 0 0 о | 12 п5
25-26 COR 0 0 D 0 0 0 0 0
27 tAPIMIN ) {-A10} 1EH 0 0 0 1 1 1 1 0 | 30ns
(-AB7) 1EH| o | 9 | 0 | + 1 1 1 0 |30ns
(-A12) ТЕН 0 a 0 1 1 1 1 о 30 ns
28 tREDMVIN + (-A1Q) 14H 0 0 0 1 0 1 0 0 20 ns
{-A67) 1&H o 0 0 1 1 1 1 о 30 ns
(-A12) 18H | O 0 0 1 1 0 0 0 | 24ns
29 fACO(MIN ) {-A10} ТЕН 0 0 0 1 1 1 1 o 30 ns
(-A67) EH | о | о | © 1 1 1 1 0 | a0ns
(-A12} ТЕН 0 0 0 1 1 1 1 0 30 ns
30 TRAS(MIN ] (-А10) 3CH 0 0 1 1 1 1 0 0 | 60ns
(-A67) 1 4BH | © 1 0 0 1 о 1 1 | 75ns
(-A12) 48H | © о | © 1 о | о | © | 72 пв
31 Module bank density 04H 0 0 0 0 0 1 0 0 16M bytes
76
NEC MC-454AD644
Function Described Bit 7 | Bit6 | Bit5 | Bit4 | BIt3 | Bt? | Bit1 | Bit 0 Notes
0 0
SPD revision
Checksum for bytes 0 - 62
Manufacture's JEDEC 1D code
location
Manufacture's P/N
Revision code
date
serial number
77
Timing Chart
Please refer to the attached timing chart 1 (p.411).
78
NEC
Package Drawing
168 PIN DUAL IN-LINE MODULE (SOCKET TYPE)
MC-454AD644
detail of @ part |
detail ot ® part
ITEM MILLIMETERS
INCHES
rie mioios
Eo ОЕ o
cn
a
©
el
— 42.18
x 1
E.
2921
EZ
1.0
>.
|
|
2
4.0+0.1
А 183352013
‚ 0.450
т
SOMAX
RR
т 5 о неее
5.250+0.006 |
„0.250.
‚ 5481 2150 |
83s
1.27 (T.P.)
0.050 (T.P.)
0.350 _
1.661
0700
0.158 MAX. —
PE
0.157_9.004
005:0.004
cial;
4.0 MIN.
1.0+0.05
Ne = <
__ 20 MIN.
3.0 MIN.
… 025 MAX.
— 254MN. 004
0.118 MIN,
0.157 MIN.
0.010 MAX.
0.003
0.100x0.004
0.+18 MIN.
79
Was this manual useful for you? yes no
Thank you for your participation!

* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project

Download PDF

advertising