Transcend TS16MSS64V8C2, TS16MSS64V8C Datasheet

Transcend TS16MSS64V8C2, TS16MSS64V8C Datasheet
144PIN PC100 Unbuffered SO-DIMM
128MB With 8M X 16 CL2
TS16MSS64V8C2
Placement
Description
The TS16MSS64V8C2 is a 16M bit x 64 Synchronous
Dynamic RAM high-density memory module. The
TS16MSS64V8C2 consists of 8 piece of CMOS
2Mx16bitsx4banks Synchronous DRAMs in TSOP-II
B
400mil packages and a 2048 bits serial EEPROM on a
144-pin printed circuit board. The TS16MSS64V8C2 is
D
a Dual In-Line Memory Module and is intended for
A
mounting into 144-pin edge connector sockets.
Synchronous design allows precise cycle control with
the use of system clock. I/O transactions are possible
F
on every clock cycle. Range of operation frequencies,
C
E
programmable latencies allow the same device to be
useful
for
a
variety
of
high
bandwidth,
high
performance memory system applications.
G
H
Features
•
Performance Range : PC100 CL2
•
Burst Mode Operation.
•
Auto and Self Refresh.
•
Serial Presence Detect (SPD) with serial
J
PCB : 09-6755
EEPROM
•
LVTTL compatible inputs and outputs.
•
Single 3.3V ± 0.3V power supply.
•
MRS cycle with address key programs.
Latency (Access from column address)
Burst Length (1,2,4,8 & Full Page)
Data Sequence (Sequential & Interleave)
•
All inputs are sampled at the positive going edge
of the system clock.
Transcend information Inc
K
I
1
144PIN PC100 Unbuffered SO-DIMM
128MB With 8M X 16 CL2
TS16MSS64V8C2
Pin Identification
Dimensions
Side
Millimeters
Symbol
Inches
Function
A
67.60 ± 0.200
2.661 ± 0.008
A0~A11
Address inputs
B
32.80
1.291
BA0,BA1
Select Bank
C
23.20
0.913
DQ0~DQ63
Data inputs/outputs
D
4.60
0.181
CLK0,CLK1
Clock Input
E
3.30
0.130
CKE0,CKE1
Clock Enable Input
F
2.50
0.098
/CS0,/CS1
Chip Select Input
G
4.00
0.157
/RAS
Row address strobe
H
6.00
0.236
/CAS
Column address strobe
I
20.00
0.787
/WE
Write Enable
J
29.21 ± 0.200
1.150 ± 0.008
DQM0~7
DQM
Vcc
Power Supply
Vss
Ground
SDA
Serial Address / Data I/O
SCL
Serial Clock
NC
No Connection
K
1.00 ± 0.100
(Refer Placement)
Transcend information Inc
0.039 ± 0.004
2
144PIN PC100 Unbuffered SO-DIMM
128MB With 8M X 16 CL2
TS16MSS64V8C2
Pinouts
Pin
Pin
Pin Pin
No
Name
No
Name
01
Vss
49
DQ13
03
DQ0
51
DQ14
05
DQ1
53
DQ15
07
DQ2
55
Vss
09
DQ3
57
NC
11
Vcc
59
NC
13
DQ4
61
CLK0
15
DQ5
63
Vcc
17
DQ6
65
/RAS
19
DQ7
67
/WE
21
Vss
69
/CS0
23
DQM0
71
*/CS1
25
DQM1
73
NC
27
Vcc
75
Vss
29
A0
77
NC
31
A1
79
NC
33
A2
81
Vcc
35
Vss
83
DQ16
37
DQ8
85
DQ17
39
DQ9
87
DQ18
41
DQ10
89
DQ19
43
DQ11
91
Vss
45
Vcc
93
DQ20
47
DQ12
95
DQ21
* Please refer Block Diagram
Transcend information Inc
Pin
No
97
99
101
103
105
107
109
111
113
115
117
119
121
123
125
127
129
131
133
135
137
139
141
143
Pin
Name
DQ22
DQ23
Vcc
A6
A8
Vss
A9
A10
Vcc
DQM2
DQM3
Vss
DQ24
DQ25
DQ26
DQ27
Vcc
DQ28
DQ29
DQ30
DQ31
Vss
SDA
Vcc
Pin
No
02
04
06
08
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
3
Pin
Name
Vss
DQ32
DQ33
DQ34
DQ35
Vcc
DQ36
DQ37
DQ38
DQ39
Vss
DQM4
DQM5
Vcc
A3
A4
A5
Vss
DQ40
DQ41
DQ42
DQ43
Vcc
DQ44
Pin
No
50
52
54
56
58
60
62
64
66
68
70
72
74
76
78
80
82
84
86
88
90
92
94
96
Pin
Name
DQ45
DQ46
DQ47
Vss
NC
NC
CKE0
Vcc
/CAS
*CKE1
*A12
*A13
*CLK1
Vss
NC
NC
Vcc
DQ48
DQ49
DQ50
DQ51
Vss
DQ52
DQ53
Pin
No
98
100
102
104
106
108
110
112
114
116
118
120
122
124
126
128
130
132
134
136
138
140
142
144
Pin
Name
DQ54
DQ55
Vcc
A7
BA0
Vss
BA1
A11
Vcc
DQM6
DQM7
Vss
DQ56
DQ57
DQ58
DQ59
Vcc
DQ60
DQ61
DQ62
DQ63
Vss
SCL
Vcc
144PIN PC100 Unbuffered SO-DIMM
128MB With 8M X 16 CL2
TS16MSS64V8C2
Block Diagram
/CS
CKE
CLK
/CS
CKE
CLK
/CS
CKE
CLK
/CS
CKE
CLK
DQM1
DQM5
SDA SCL
A0
A1
A2
24C02
A0~11,BA0~1
DQ0~15
/RAS
/CAS 8Mx16
/WE SDRAM
/CS
CKE
CLK
DQM2
DQM6
SCL
A0~11,BA0~1
DQ0~15
/RAS
/CAS 8Mx16
/WE SDRAM
/CS
CKE
CLK
DQM3
DQM7
LDQM
UDQM
/CS
CKE
CLK
DQM0
DQM4
SDA
A0~11,BA0~1
DQ0~15
/RAS
/CAS 8Mx16
/WE SDRAM
LDQM
UDQM
A0~11,BA0~1
DQ0~15
/RAS
/CAS 8Mx16
/WE SDRAM
LDQM
UDQM
/CS
CKE
CLK
LDQM
UDQM
A0~11,BA0~1
DQ0~15
/RAS
/CAS 8Mx16
/WE SDRAM
LDQM
UDQM
A0~11,BA0~1
DQ0~15
/RAS
/CAS 8Mx16
/WE SDRAM
LDQM
UDQM
A0~11,BA0~1
DQ0~15
/RAS
/CAS 8Mx16
/WE SDRAM
LDQM
UDQM
/CS1
CKE1
CLK1
A0~11,BA0~1
DQ0~15
/RAS
/CAS 8Mx16
/WE SDRAM
LDQM
UDQM
A0~A11
BA0~BA1
DQ0~DQ63
/RAS
/CAS
/WE
/CS0
CKE0
CLK0
This technical information is based on industry standard data and tests believed to be reliable. However, Transcend makes no warranties, either
expressed or implied, as to its accuracy and assume no liability in connection with the use of this product. Transcend reserves the right to make changes
in specifications at any time without prior notice.
Transcend information Inc
4
144PIN PC100 Unbuffered SO-DIMM
128MB With 8M X 16 CL2
TS16MSS64V8C2
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to Vss
Voltage on VDD supply relative to Vss
Storage temperature
Power dissipation
Short circuit current
Mean time between failure
Temperature Humidity Burning
Temperature Cycling Test
Note :
Symbol
VIN, VOUT
VDD, VDDQ
TSTG
PD
IOS
MTBF
THB
TC
Value
-1.0~4.6
-1.0~4.6
-55~+150
8
50
50
85°C/85%, Static Stress
0°C ~ 125°C Cycling
Unit
V
V
°C
W
mA
year
°C-%
°C
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to Vss = 0V, TA = 0 to 70 °C)
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
VDD
3.0
3.3
3.6
V
Input high voltage
VIH
2.0
3.0
VDD+0.3
V
1
Input low voltage
VIL
-0.3
0
0.8
V
2
Output high voltage
VOH
2.4
-
-
V
IOH = -2mA
Output low voltage
VOL
-
-
0.4
V
IOL = 2mA
ILI
-10
-
10
uA
3
Input leakage current
Note :
Note
1. VIH (max) = 5.6V AC. The overshoot voltage duration is < 3ns.
2. VIL (min) = -2.0V AC. The undershoot voltage duration is < 3ns.
3. Any input 0V < VIN < VDDQ. Input leakage currents include Hi-Z output leakage for all bi-directional buffers
with Tri-state outputs.
CAPACITANCE (VDD = 3.3V, TA = 23℃, f = 1MHz, VREF = 1.4V ± 200mV)
Parameter
Input capacitance (A0~A11, BA0~BA1)
Input capacitance (/RAS, /CAS, /WE)
Input capacitance (CKE0~CKE1)
Input capacitance (CLK0~CLK1)
Input capacitance (/CS0~/CS1)
Input capacitance (DQM0~DQM7)
Data input/output capacitance (DQ0~DQ63)
Transcend information Inc
Symbol
Min
Max
Unit
CIN1
CIN2
CIN3
CIN4
CIN5
CIN6
COUT
25
25
15
15
15
10
10
45
45
25
21
25
12
12
pF
pF
pF
pF
pF
pF
pF
5
144PIN PC100 Unbuffered SO-DIMM
128MB With 8M X 16 CL2
TS16MSS64V8C2
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)
Parameter
Symbol
Test Condition
Operating Current
Burst Length =1
ICC1
(One Bank Active)
tRC≥tRC(min)
IOL=0mA
ICC2P
CKE≤VIL(max), tCC=15ns
Precharge Standby Current
ICC2PS CKE & CLK≤VIL(max), tCC=∞
in power-down mode
ICC2N
CKE≥VIH(min), /CS≥VIH(min), tCC=10ns
Value
Unit
Note
680
mA
1
8
160
mA
Input signals are changed one time during 20ns
Precharge Standby Current
in non power-down mode
ICC2NS CKE≥VIH(min), CLK≤VIL(max), tCC=∞
mA
8
56
Input signals are stable
Active Standby Current
in power-down mode
ICC3P
CKE≤VIL(max), tCC=10ns
40
ICC3PS
CKE & CLK≤VIL(max), tCC=∞
40
CKE≥VIH(min), /CS≥VIH(min), tCC=10ns
240
ICC3N
Active Standby Current
in non power-down mode
(One Bank Active)
Input signals are changed one time during 20ns
ICC3NS
CKE≥VIH(min), CLK≤VIL(max), tCC=∞
mA
mA
160
Input signals are stable
700
mA
1
ICC5
IOL= 0 mA
Page Burst
tccD = 2CLKs
tRC≥tRC(min)
960
mA
2
ICC6
CKE≤0.2V
12
mA
Operating Current
(Burst Mode)
ICC4
Refresh current
Self Refresh Current
Note: Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ
loading cap.
Transcend information Inc
6
144PIN PC100 Unbuffered SO-DIMM
128MB With 8M X 16 CL2
TS16MSS64V8C2
AC OPERATING TEST CONDITIONS (VDD = 3.3V±0.3V, TA = 0 to 70°C)
Parameter
AC Input levels (VIH/VIL)
Input timing measurement reference level
Input rise and fall time
Output timing measurement reference level
Output load condition
Value
2.4/0.4
1.4
tr/tf=1/1
1.4
See Fig. 2
Unit
V
V
ns
V
Vtt=1.4V
3.3V
50 Ohm
1200 Ohm
Output
VOH (DC)=2.4V, IOH=-2mA
VOL (DC)=0.4V, I OL=2mA
Output
Z0=50 Ohm
50pF
50pF
870 Ohm
(Fig. 2) AC Output Load Circuit
(Fig. 1) DC Output Load Circuit
OPERATING AC PARAMETER (AC operating conditions unless otherwise noted)
Parameter
Symbol
Value
Unit
Note
Row active to row active delay
tRRD(min)
20
ns
1
/RAS to /CAS delay
tRCD(min)
20
ns
1
Row precharge time
tRP(min)
20
ns
1
tRAS(min)
50
ns
1
tRAS(max)
100
us
Row active time
Row cycle time
tRC(min)
70
ns
1
Last data in to new col. address delay
tCDL(min)
1
CLK
2
Last data in to row precharge
tRDL(min)
2
CLK
2
Last data in to burst stop
tBDL(min)
1
CLK
2
Col. address to col. address delay
tCCD(min)
1
CLK
3
CAS latency = 3
2
ea
CAS latency = 2
1
Note: 1. The minimum number of clock cycles is determined by dividing the minimum time required with
clock cycle time, and then rounding off to the next higher integer.
2. Minimum delay is required to complete write.
3. All parts allow every cycle column address change.
4. In case of row precharge interrupt, auto precharge and read burst stop.
4
Number of valid output data
Transcend information Inc
@Operation
7
144PIN PC100 Unbuffered SO-DIMM
128MB With 8M X 16 CL2
TS16MSS64V8C2
AC CHARACTERISTICS (AC operating conditions unless otherwise noted)
Refer to the individual component, not the whole module.
Parameter
Symbol
CLK cycle time
CLK to valid
output delay
Output data
hold time
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
tCC
Value
Min
10
10
tSAC
tOH
tCH
tCL
tSS
tSH
tSLZ
Unit
Note
1000
ns
1
6
6
ns
1, 2
ns
2
ns
ns
ns
ns
ns
3
3
3
3
2
Max
3
3
3
3
2
1
1
CAS latency=3
6
CLK to output
tSHZ
in Hi-Z
CAS latency=2
6
Note: 1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf)= 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Transcend information Inc
8
ns
144PIN PC100 Unbuffered SO-DIMM
128MB With 8M X 16 CL2
TS16MSS64V8C2
SIMPLIFIED TRUTH TABLE
COMMAND
Register
Mode Register Set
Refresh
Auto Refresh
Entry
Self
Refresh
Exit
Bank Active & Row Addr.
Read &
Column Address
Auto Precharge Disable
Write &
Column Address
Auto Precharge Disable
Auto Precharge Enable
Clock Suspend or
Active Power Down
/RAS
/CAS
/WE
DQM
A11, A0~A9
L
L
L
L
X
OP CODE
H
H
L
L
L
L
H
X
X
L
H
L
H
H
X
H
X
H
X
X
X
H
X
L
L
H
H
X
V
H
X
L
H
L
H
X
V
H
L
L
X
H
X
L
H
H
L
X
Bank Selection
Both Banks
H
X
L
L
H
L
X
Entry
H
L
H
X
X
X
L
V
V
V
X
X
X
X
H
X
X
X
L
H
H
H
H
X
X
X
L
V
V
V
Entry
A10/AP
X
L
Auto Precharge Enable
BA0,1
H
X
Exit
L
H
H
L
Precharge Power
Down Mode
V
1,2
3
3
3
3
Row Address
L
Column
Address
(A0~A8)
H
L
Column
Address
(A0~A8)
H
X
V
X
Note
L
H
4
4, 5
4
4, 5
6
X
X
X
X
X
X
Exit
DQM
L
H
X
H
No Operation Command
Note:
/CS
H
Burst Stop
Precharge
CKEn-1 CKEn
H
X
H
X
X
X
L
H
H
H
X
V
X
X
X
7
(V=Valid, X=Don’t Care, H=Logic High, L=Logic Low)
1. OP Code : Operand Code
A0~A11, BA0~BA1 : Program keys. (@MRS)
2. MRS can be issued only at all banks precharge state.
A new command can be issued after 2 CLK cycles of MRS.
3. Auto refresh functions are as same as CBR refresh of DRAM.
The automatical precharge without row precharge command is meant by “Auto”.
Auto/self refresh can be issued only at all banks precharge state.
4. BA0~BA1: Bank select address.
If both BA0 and BA1 are “Low” at read, write, row active and precharge, bank A is selected.
If both BA0 is “Low” and BA1 is “High” at read, write, row active and precharge, bank B is selected.
If both BA0 is “High” and BA1 is “Low” at read, write, row active and precharge, bank C is selected.
If both BA0 and BA1 are “High” at read, write, row active and precharge, bank D is selected.
If A10/AP is “High” at row precharge, BA0 and BA1 is ignored and all banks are selected.
5. During burst read or write with auto precharge, new read/write command can not be issued.
Another bank read/write command can be issued after the end of burst.
New row active of the associated bank can be issued at tRP after the end of burst.
6. Burst stop command is valid at every burst length.
7. DQM sampled at positive going edged of a CLK masks the data-in at the very CLK (Write DQM latency is 0),
but makes Hi-Z state the data-out of 2 CLK cycles after. (Read DQM latency is 2)
Transcend information Inc
9
144PIN PC100 Unbuffered SO-DIMM
128MB With 8M X 16 CL2
TS16MSS64V8C2
Serial Presence Detect Specification
Serial Presence Detect
Byte No.
Standard Specification
Vendor Part
0
# of Bytes Written into Serial Memory
Function Described
128bytes
80
1
Total # of Bytes of S.P.D Memory
256bytes
08
2
Fundamental Memory Type
SDRAM
04
3
# of Row Addresses on this Assembly
A0~A11
0C
4
# of Column Addresses on this Assembly
A0~A8
09
5
# of Module Banks on this Assembly
2 banks
02
6
Data Width of this Assembly
64bits
40
7
Data Width Continuation
0
00
8
Voltage Interface Standard of this Assembly
LVTTL3.3V
01
9
SDRAM Cycle Time (highest CAS latency)
10ns
A0
10
SDRAM Access from Clock (highest CL)
6ns
60
11
DIMM configuration type (non-parity, ECC)
DIMM
00
12
Refresh Rate Type
15.625us/Self Refresh
80
13
Primary SDRAM Width
X16
10
14
Error Checking SDRAM Width
0
00
15
Min Clock Delay Back to Back Random Address
1 clock
01
16
Burst Lengths Supported
1,2,4,8 & Full page
8F
17
Number of banks on each SDRAM device
4 bank
04
18
CAS # Latency
3,2
06
19
CS # Latency
0 clock
01
20
Write Latency
0 clock
01
21
SDRAM Module Attributes
Non Buffer
00
22
SDRAM Device Attributes : General
Prec All, Auto Prec, R/W Burst
0E
nd
23
SDRAM Cycle Time (2 highest CL)
CL2
A0
24
SDRAM Access from Clock (2nd highest CL)
CL2
60
0
00
0
00
25
rd
SDRAM Cycle Time (3 highest CL)
rd
26
SDRAM Access from Clock (3 highest CL)
27
Minimum Row Precharge Time
20ns
14
28
Minimum Row Active to Row Activate
20ns
14
29
Minimum RAS to CAS Delay
20ns
14
30
Minimum RAS Pulse Width
50ns
32
31
Density of Each Bank on Module
64MB
10
32
Command/Address Setup Time
2ns
20
33
Command/Address Hold Time
1ns
10
34
Data Signal Setup Time
2ns
20
35
Data Signal Hold Time
1ns
10
-
00
36-61
Superset Information
Transcend information Inc
10
144PIN PC100 Unbuffered SO-DIMM
128MB With 8M X 16 CL2
TS16MSS64V8C2
62
SPD Data Revision Code
Version1.2
12
63
Checksum for Bytes 0-62
0E
0E
Transcend
7F, 4F
T
54
64-71
72
Manufacturers JEDEC ID code per JEP-108E
Manufacturing Location
54 53 31 36 4D 53
73-90
Manufacturers Part Number
TS16MSS64V8C2
53 36 34 56 38 43
32 20 20 20 20 20
91-92
Revision Code
-
0
93-94
Manufacturing Date
By Manufacturer
Variable
95-98
Assembly Serial Number
By Manufacturer
Variable
-
0
100MHz
64
CL=3,2 Clock=0,1
C6
Open
FF
99-125 Manufacturer Specific Data
126
Intel Specification Frequency
127
Intel Specification CAS# Latency/Clock Signal
Support
128~
Unused Storage Locations
Transcend information Inc
11
Was this manual useful for you? yes no
Thank you for your participation!

* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project

Download PDF

advertisement