XC61H Series - Torex Semiconductor

XC61H Series - Torex Semiconductor
XC61H Series
ETR0212-004a
Voltage Detector with Delay Circuit Built-In
■GENERAL DESCRIPTION
The XC61H series is a highly accurate, low power consumption CMOS voltage detector with a delay circuit. Detect voltage is
accurate with minimal temperature drift. Output configurations are available in both CMOS and N-channel open drain.
Since the full delay circuit is built-in, an external delay-time capacitor is not necessary so that high density mounting is possible.
■FEATURES
■APPLICATIONS
●Microprocessor reset circuitry
●System battery life and charge voltage monitors
●Memory battery back-up circuits
●Power-on reset circuits
●Power failure detection
●Delay circuitry
Detect Voltage Accuracy : ± 2%
Low Power Consumption
: 1.0μA(TYP.)[ VIN=2.0V ]
: 1.6V ~ 6.0V (0.1V increments)
Detect Voltage Range
Operating Voltage Range
: 0.7V ~ 10.0V
Detect Voltage Temperature Characteristics
: ±100ppm/℃(TYP.)
Built-In Release Delay time : 1ms (MIN.)
50ms (MIN.)
80ms (MIN.)
Output Configuration
: N-ch open drain output or CMOS
Operating Ambient Temperature : -30℃~80℃
Package
: SOT-23
Environmentally Friendly : EU RoHS Compliant, Pb Free
■TYPICAL APPLICATION CIRCUITS ■TYPICAL PERFORMANCE
CHARACTERISTICS
●Release Delay Time (tDR) vs. Ambient Temperature
μP
XC61HC3012
V IN
RESETB
2
VIN
RESETB
INPUT
3
VSS
1
V SS
XC61HN series
Rpull is Not
not necessary
necessarywith
withCMOS
CMOSoutput
outputproducts
products
Release Delay Time: tDR(ms)
R pull
Ambient Temperature: Ta (℃)
1/13
XC61H Series
■PIN CONFIGURATION
■PIN ASSIGNMENT
PIN NUMBER
PIN NAME
FUNCTION
1
VSS
Ground
2
RESETB
Output
3
VIN
Supply Voltage Input
SOT-23
(TOP VIEW)
■PRODUCT CLASSIFICATION
●Ordering Information
XC61H①②③④⑤⑥⑦-⑧(*1)
DESIGNATOR
ITEM
①
Output Configuration
②③
Detect Voltage (VDF)
④
Release Delay Time
SYMBOL
C
DESCRIPTION
CMOS output
N
N-ch open drain output
16 ~ 60
e.g. 2.5V → ②2 , ③5
1
50ms ~ 200ms
4
80ms ~ 400ms
5
1ms ~ 50ms
± 2.0%(*2)
⑤
Detect Accuracy
2
⑥⑦-⑧(*1)
Package
(Oder Unit)
MR-G
SOT-23 (3000pcs/Reel)
(*1) The ”-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.
(*2) No parts are available with an accuracy of ± 1%
■BLOCK DIAGRAMS
(1)CMOS output
2/13
(2)N-ch open drain output
XC61H
Series
■ABSOLUTE MAXIMUM RATINGS
PARAMETER
Ta=25℃
SYMBOL
Input Voltage
Output Current
CMOS
Output Voltage
N-ch open drain output
Power Dissipation
SOT-23
Operating Ambient Temperature
Storage Temperature
VIN
IOUT
VRESETB
Pd
Topr
Tstg
RATINGS
VSS -0.3 ~ 12.0
50
VSS-0.3 ~VIN+0.3
VSS -0.3 ~ 12
250
-30~+80
-40~+125
UNITS
V
mA
V
mW
℃
℃
■ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
Detect Voltage
VDF
Hysteresis Width
VHYS
Supply Current (*1)
ISS
Operating Voltage
VIN
CONDITIONS
VIN = 1.5V
VIN = 2.0V
VIN = 3.0V
VIN = 4.0V
VIN = 5.0V
VDF=1.6V~6.0V
N-ch, VDS = 0.5V
Output Current
IOUT
P-ch, VDS=2.1V
(CMOS Output)
Leakage
Current
CMOS Output
(Pch)
Ta = 25℃
VIN = 1.0V
VIN = 2.0V
VIN = 3.0V
VIN = 4.0V
VIN = 5.0V
MIN.
VDF(T)
x 0.98
VDF
x 0.02
0.7
1.0
3.0
5.0
6.0
7.0
VIN = 8.0V
VIN=VDF x 0.9V, VRESETB=0V
-
TYP.
VDF
x 0.05
0.9
1.0
1.3
1.6
2.0
2.2
7.7
10.1
11.5
13.0
MAX.
VDF(T)
x 1.02
VDF
x 0.08
2.6
3.0
3.4
3.8
4.2
10.0
-
-10.0
-2.0
-0.01
-
VDF(T)
ILEAK
Nch Open
Drain Output
Detect Voltage
Temperature Characteristics
ΔVDF/
(ΔTopr・VDF)
Release Delay Time
(VDR → RESETB inversion)
tDR
UNITS
CIRCUIT
V
①
V
①
μA
②
V
①
③
mA
④
μA
③
VIN=10.0V, VRESETB=10.0V
-
0.01
0.1
-30℃≦Topr≦80℃
-
±100
-
ppm/℃
①
50
80
1
-
200
400
50
ms
⑤
VIN changes from 0.6V to 10V
VDF (T) is nominal detect voltage value
Release Voltage: VDR = VDF + VHYS
(*1) The supply current during power-start until output being stable (during release operation) is 2μA greater with comparison to the period
after the completion of release operation because of the shoot-through current in delay current.
3/13
XC61H Series
■OPERATIONAL EXPLANATION
●CMOS output
An input voltage VIN starts higher than the release voltage VDR. Then, VIN voltage will gradually fall. When VIN voltage is
higher than detect voltage VDF, output voltage RESETB is equal to the VIN voltage.
*Note that high impedance exists at RESETB with the N-channel open drain output configuration. If the RESETB pin is
pulled up, RESETB will be equal to the pull up voltage.
② When VIN falls below VDF, RESETB will be equal to ground voltage VSS level (detect state).
* Note that this also applies to N-channel open drain output configurations.
③
When VIN falls to a level below that of the minimum operating voltage VMIN, output will become unstable.
*When the output pin is generally pulled up with N-channel open drain output configurations, output will be equal to pull
up voltage.
④ When VIN rises above the VSS level (excepting levels lower than minimum operating voltage), RESETB will be equal to
VSS until VIN reaches the VDR level.
⑤ Although VIN will rise to a level higher than VDR, RESETB maintains ground voltage level via the delay circuit.
⑥ After taking a release delay time, VIN voltage will be output at the RESETB pin.
*High impedance exists with the N-channel open drain output configuration and that voltage will be dependent on pull up.
①
Notes:
1. The difference between VDR and VDF represents the hysteresis width.
2. Release delay time (tDR) represents the time it takes until when VIN voltage appears at RESETB pin once the input
voltage has exceeded the VDR level.
●Timing Chart
Output Voltage (RESETB)
Release Delay Time (tDR)
4/13
XC61H
Series
■NOTES ON USE
1. Please use this IC within the stated maximum ratings. For temporary, transitional voltage drop or voltage rising
phenomenon, the IC is liable to malfunction should the ratings be exceeded.
2. When a resistor is connected between the VIN pin and the power supply with CMOS output configurations, irregular
oscillation may occur as a result of voltage drops at RIN if load current (IOUT) exists. It is therefore recommend that no
resistor be added. (refer to Figure 1 below)
3. When a resistor (RIN) is connected between the VIN pin and the power supply with CMOS output configurations,
irrespective of N-ch open drain output configurations, oscillation may occur as a result of shoot-through current at the time
of voltage release even if load current (IOUT) does not exist. (refer to Figure 2 below)
4. If a resistor (RIN) must be used, then please use with as small a level of input impedance as possible in order to control the
occurrences of oscillation as described above. Further, please ensure that RIN is less than 10kΩ and that CIN is more than
0.1μF, please test with the actual device. However, N-ch open drain output only. (Figure 1).
5. With a resistor RIN connected between the VIN pin and the power supply, the VIN pin voltage will be getting lower than the
power supply voltage as a result of the IC's supply current flowing through the VIN pin.
6. Depending on circuit's operation, release delay time of this IC can be widely changed due to upper limits or lower limits of
operational ambient temperature.
7. Torex places an importance on improving our products and its reliability.
However, by any possibility, we would request user fail-safe design and post-aging treatment on system or equipment.
●Irregular Oscillations
(1) Irregular oscillation as a result of load current with the CMOS output configuration:
When the voltage applied at power supply, release operations commence and the detector's output voltage
increases. Load current (IOUT) will flow through RL. Because a voltage drop (RIN x IOUT) is produced at the RIN resistor,
located between the power supply and the VIN pin, the load current will flow via the IC's VIN pin. The voltage drop will
also lead to a fall in the voltage level at the VIN pin. When the VIN pin voltage level falls below the detect voltage level,
detect operations will commence. Following detect operations, load current flow will cease and since voltage drop at
RIN will disappear, the voltage level at the VIN pin will rise and release operations will begin over again.
Irregular oscillation may occur with this "release - detect - release" repetition.
Further, this condition will also appear via means of a similar mechanism during detect operations.
(2) Irregular oscillation as a result of shoot-through current:
Since the XC61H series are CMOS ICS, shoot-through current will flow when the IC's internal circuit switching
operates (during release and detect operations). Consequently, irregular oscillation is liable to occur during release
voltage operations as a result of output current which is influenced by this shoot-through current (Figure 3).
Since hysteresis exists during detect operations, irregular oscillation is unlikely to occur.
XC61HC Series
XC61HN Series
Power Supply
Power Supply
図 1.入力抵抗を入れた時の回路例
Figure
1 Use of input resistor RIN
5/13
XC61H Series
■NOTES ON USE (Continued)
●Irregular Oscillations (Continued)
XC61HC Series
R IN
Power Supply
XC61H C Series
R IN ×IOU T
IOU T
V IN
Voltage drop
VOUT
RESETB
V SS
RL
Figure 2 Irregular Oscillation by output current
XC61HC Series
XC61HN Series
R IN
Power Supply
XC61HN Series
XC61HC Series
RIN ×ISS*
Voltage drop
VIN
RESETB
VOUT
VSS
ISS*
(includes through current)
図 3.貫通電流による発振
Figure
3 Irregular Oscillation by shoot-through current
6/13
XC61H
Series
■TEST CIRCUITS
測定回路1
測定回路2
●Circuit ①
●Circuit ②
A
*R
VIN
220kΩ
VIN
VIN
V IN
RESETB
V
RESETB
VSS
VSS
V
測定回路3
●Circuit ③
測定回路4
●Circuit ④
VIN
VDS
VIN
VIN
V IN
A
RESETB
RESETB
VSS
V DS
A
VSS
測定回路5
●Circuit ⑤
*R
VIN
RESETB
220kΩ
measurement of
waveform
VSS
*R is not necessary with CMOS output products.
7/13
XC61H Series
■TYPICAL PERFORMANCE CHARACTERISTICS
XC61HN2512
XC61HN1612
XC61HN2512
XC61HN3512
検出電圧,解除電圧 VDF,VDR (V)
XC61HN1612
XC61HN3512
R-pull:100kΩ
Ta=-30℃
25℃
80℃
XC61HN1612
8/13
XC61HN2512
R-pull:100kΩ
Ta=-30℃
25℃
80℃
XC61HN1612
Detect, Release Voltage: VDF,VDR (V)
出力電圧 VOUT (V)
XC61HN1612
Detect, Release Voltage:
VDF,V
DR (V)
出力電圧
VOUT
(V)
Detect, Release Voltage: VDF,VDR (V)
(3) Detect Voltage, Release Voltage vs. Input Voltage
XC61HN3512
R-pull:100kΩ
Ta=-30℃
25℃
80℃
XC61HN2512
XC61H
Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
XC61HN2512
XC61HN3512
XC61HN3512
XC61HN1612
XC61HN2512
XC61HN3512
XC61HC2712
XC61HC4412
(7)Ambient Temperature vs. Release Delay Time (tDR)
Release Delay Time: tDR (ms)
Release Delay Time: tDR (ms)
Release Delay Time: tDR (ms)
XC61HC3052
XC61HC3042
XC61HC3012
9/13
XC61H Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(8)Input Voltage vs. Release Delay Time (tDR)
Release Delay Time: tDR (ms)
XC61HC2712
10/13
XC61H
Series
■PACKAGING INFORMATION
●SOT-23
11/13
XC61H Series
■MARKING RULE
●SOT-23
① represents product series
MARK
8
PRODUCTS SERIES
XC61H*******-G
② standard:represents output configuration and integer number of detect voltage
CMOS output (XC61HC series)
MARK
A
B
C
D
E
F
VOLTAGE
(V)
1. X
2. X
3. X
4. X
5. X
6. X
N-channel open drain (XC61HN series)
VOLTAGE
(V)
1. X
2. X
3. X
4. X
5. X
6. X
MARK
P
R
S
T
U
V
③ represents decimal number of detect voltage and delay time.
DETECT
VOLTAGE
(V)
MARK
DELAY TIME
50ms~200ms
(XC61H***1***-G)
DELAY TIME
80ms~400ms
(XC61H***4***-G)
DELAY TIME
1ms~50ms
(XC61H***5***-G)
X.0
0
A
N
X.1
1
B
P
X.2
2
C
R
X.3
3
D
S
X.4
4
E
T
X.5
5
F
U
X.6
6
H
V
X.7
7
K
X
X.8
8
L
Y
X.9
9
M
Z
④ represents production lot number
0 to 9, A to Z or inverted characters of 0 to 9, A to Z repeated.
(G, I, J, O, Q,W excluded)
*No character inversion used.
12/13
XC61H
Series
1.
The product and product specifications contained herein are subject to change without notice to
improve performance characteristics. Consult us, or our representatives before use, to confirm that
the information in this datasheet is up to date.
2.
The information in this datasheet is intended to illustrate the operation and characteristics of our
products. We neither make warranties or representations with respect to the accuracy or
completeness of the information contained in this datasheet nor grant any license to any intellectual
property rights of ours or any third party concerning with the information in this datasheet.
3.
Applicable export control laws and regulations should be complied and the procedures required by
such laws and regulations should also be followed, when the product or any information contained in
this datasheet is exported.
4.
The product is neither intended nor warranted for use in equipment of systems which require
extremely high levels of quality and/or reliability and/or a malfunction or failure which may cause loss
of human life, bodily injury, serious property damage including but not limited to devices or equipment
used in 1) nuclear facilities, 2) aerospace industry, 3) medical facilities, 4) automobile industry and
other transportation industry and 5) safety devices and safety equipment to control combustions and
explosions. Do not use the product for the above use unless agreed by us in writing in advance.
5.
Although we make continuous efforts to improve the quality and reliability of our products;
nevertheless Semiconductors are likely to fail with a certain probability. So in order to prevent
personal injury and/or property damage resulting from such failure, customers are required to
incorporate adequate safety measures in their designs, such as system fail safes, redundancy and
fire prevention features.
6.
Our products are not designed to be Radiation-resistant.
7.
Please use the product listed in this datasheet within the specified ranges.
8.
We assume no responsibility for damage or loss due to abnormal use.
9.
All rights reserved. No part of this datasheet may be copied or reproduced unless agreed by Torex
Semiconductor Ltd in writing in advance.
TOREX SEMICONDUCTOR LTD.
13/13
Was this manual useful for you? yes no
Thank you for your participation!

* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project

Download PDF

advertisement