RF Power GaN in Plastic Packages
RF Power GaN in Plastic Packages
Freescale introduces breakthrough ultra-wideband RF power
GaN on SiC transistors in advanced plastic packages
Announcing: MMRF5011N and MMRF5015N
TM
May 2015
Freescale RF Military Overview
•
•
•
Freescale RF is #1 in RF power*
Strong presence in ISM, mobile radio, broadcast and
avionics
June 2013: Freescale RF announced new focus supporting
U.S. defense industry
Freescale RF Military Value Proposition
•
Products and Technology
− Leveraging
20 years of innovation in RF power
− Highest performing RF portfolio
•
Support
− U.S.
LDMOS fabrication and dedicated internal
manufacturing
− Freescale product longevity program (10 or 15 years)
− Dedicated U.S.-based applications and systems engineering
support
•
Compliance
− ITAR
compliant, secure technical data handling
*Source: ABI Report, Sep 2014
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1
MMRF5011N – Device Details
Part Overview
Product Performance:
• Output power: 10 W CW
• Supply voltage: 28 V
• Frequency of operation: up to 3000 MHz
• 10 W CW wideband circuit performance: 200-2600 MHz
−
−
Gain : 10 dB Min
Drain Efficiency: 40% Min
Description:
10 W CW RF power transistor driver designed for wideband amplifiers
with frequencies up to 3000 MHz. The high gain, ruggedness and
wideband performance of this device make it ideal for large-signal,
common-source amplifier applications for linear and compressed
amplifier circuits.
Features:
• Advanced GaN on SiC, offering high power density
• Suitable for octave and decade bandwidth wideband amplifiers
• Input matched for extended wideband performance
• High ruggedness, > 20:1 VSWR
• 200-2600 MHz wideband reference circuit
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2
MMRF5011N – Featured Device
Applications
•
Wideband and narrowband amplifiers
Ideal for multi-octave communication applications
Professional and military radios
Radar, jammers and electronic warfare
General purpose wideband amplifiers
•
•
•
•
Competitive Advantages
•
OM-270-8 plastic packaging, industry leading thermal resistance
Ultra wideband 200-2600 MHz performance
•
•
•
•
•
•
•
10 dB min gain and 40% min efficiency
Low thermal resistance, due to die attached technology and packaging
Device included in Freescale’s Product Longevity Program for 15 years
Able to replace multiple RF amplifiers with one wideband PA
Application circuit support
Dedicated RF military team
TM
3
MMRF5015N – Device Details
Part Overview
Product Performance:
• Output power: 125 W CW
• Supply voltage: 50 V
• Frequency of operation: up to 2700 MHz
• 100 W CW wideband circuit performance: 200-2500 MHz
−
−
Gain : 12 dB Min
Drain Efficiency: 40% Min
Description:
This 125 W CW RF power transistor is designed for wideband
operation up to 2700 MHz. The high gain, ruggedness and wideband
performance of this device make it ideal for large-signal, commonsource amplifier applications for linear and compressed amplifier
circuits. Industry leading thermal resistance.
Features:
• Advanced GaN on SiC, offering high power density
• Suitable for octave and decade bandwidth wideband amplifiers
• Input matched for extended wideband performance
• High ruggedness, > 20:1 VSWR
• Low Thermal Resistance
• 200-2500 MHz wideband reference circuit
TM
4
MMRF5015N – Featured Device
Applications
•
Wideband and narrowband amplifiers
Ideal for multi-octave communication applications
Professional and military radios
Radar, jammers and electronic warfare
General purpose wideband amplifiers
•
•
•
•
Competitive Advantages
•
Industry leading wideband 200-2500 MHz performance
•
•
•
•
•
•
•
•
12 dB min gain and 40% min efficiency
Low thermal resistance, due to die attached technology and packaging
125 watts CW capable
Device will be on the Freescale 15 year Product Longevity Program
Able to replace multiple RF amplifiers with one wideband PA
Application circuit support
Dedicated RF Military team
Availability: sampling now. In production Q3 2015. (orderable part MMRF5015NR5)
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5
MMRF5015N
125 W GaN
Power Drive Up
125W
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6
6
Design Goals Met
►100 W CW
►200-2500 MHz
►12 dB min gain
►40% min eff
MMRF5015N
200-2500 MHz Circuit
100 W CW Performance
MMRF5015N 100W GaN CW Performance
100 W Gain
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
100 W Eff
80
70
60
50
40
30
20
10
0
100
300
500
700
900
1100
1300
1500
1700
Frequency (MHz)
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7
1900
2100
2300
2500
2700
Efficiency (%)
Gain (dB)
VDD = 50 V, IDQ=350 mA
MMRF5015N
1300-1900 MHz Circuit
Pulsed Performance
1600 MHz Gain
1600
MHzEff
Eff
1600MHz
1900 MHz Gain
1900
MHz Eff
1900MHz
18
68
17
60
16
52
15
44
14
36
13
28
VDD = 50 V
IDQ = 350 mA,
Pulse Width = 500 usec
50% Duty Factor.
12
11
20
12
10
4
0
20
40
60
80
100
Output Power (W)
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8
120
140
160
180
Eff (%)
Gain (dB)
1300 MHz Gain
1300MHz
1300
MHz Eff
Eff
More Information
From the Product Summary Pages
• Data sheets
From www.freescale.com/RFpower
• Product Selector Guide
• Simulation models – ADS and AWR
• Parametric search
• MTTF calculators
• App notes – > 30 available
• S-parameters
• White papers & webinars
MMRF5011N:
• Freescale Product Longevity Program
MMRF5015N
On the web
• Blogs & Twitter – @RFLeonard
• YouTube.com/Freescale
• RF Engineering Tools App
for Android & iOS
• On eTailers & Freescale Approved
Distributors
TM
9
TM
www.Freescale.com
© 2015 Freescale Semiconductor, Inc.
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