datasheet
DATASHEET
DDR3 8GB/4GB/2GB/1GB
Module TYPE
SODIMM
Module speed
PC3-12800
CAS Latency
CL-11
Pin
204pin
SDRAM Operating Temp
-40 ℃ ~ 85 ℃
DDR3 UNBUFFERED W/T SODIMM
1. Features
Key Parameter
Industry
Speed
Nomenclature
Grade
PC3-12800
-
Data Rate MT/s
CL=7
CL=9
CL=11
1066
1333
1600
JEDEC Standard 204-pin Dual In-Line Memory
tRC
(ns)
(ns)
(ns)
13.125 13.125
13.125
• Two different termination values (Rtt_Nom
• Intend for PC3-12800 applications
& Rtt_WR)
• Inputs and Outputs are SSTL-15 compatible
± 0.075
• Auto & self refresh 7.8µs (TA ≤ +85°C)
•30u”Golden Contactor
• VDD=VDDQ= 1.35 Volt (-0.067/+0.1V)
• DRAM operating temperature range
• Bi-directional Differential Data Strobe
- Industrial(-40°C ≤ TA ≤ +85°C)
• DLL aligns DQ and DQS transition with CK
• Programmable Device Operation:
transition
• SDRAMs have 8 internal banks for concurrent
operation
• Normal and Dynamic On-Die Termination
-
Burst Type: Sequential or Interleave
-
Device CAS# Latency: 9
-
Burst Length: switch on-the-fly:
support.
• SDRAMs are 78-ball BGA Package
1
tRP
• 8 bit pre-fetch
Module
• VDD=VDDQ= 1.5 Volt
tRCD
BL=8 or BC 4
• RoHS Compliant (Section 14)
Version: 1.41
Datasheet, NOV, 2012
2008©InnoDisk Corp. All rights reserved InnoDisk Corp.
reserves the right to change the Products and Specification without notices.
DDR3 UNBUFFERED W/T SODIMM
2. PACKAGE DIMENSION
Note: Device position is only for reference.
2
Version: 1.41
Datasheet, NOV, 2012
2008©InnoDisk Corp. All rights reserved InnoDisk Corp.
reserves the right to change the Products and Specification without notices.
DDR3 UNBUFFERED W/T SODIMM
3. Ordering Information
2
Type & Speed
Density
Height
Innodisk Memory P/N
DDR3L-1600 SODIMM
8GB
1.18"
M3S0-8GMSDDPC
4GB
1.18"
M3S0-4GMSCDPC
2GB
1.18"
M3S0-2GMJCDPC
1GB
1.18”
M3S0-1GMFCDPC
Version: 1.41
Datasheet, NOV, 2012
2008©InnoDisk Corp. All rights reserved InnoDisk Corp.
reserves the right to change the Products and Specification without notices.
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