NXP | MRF9085L | Data Sheet | NXP MRF9085L 880 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs Data Sheet

NXP MRF9085L 880 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs Data Sheet
Freescale Semiconductor
Technical Data
Document Number: MRF9085--1
Rev. 12, 9/2008
RF Power Field Effect Transistor
MRF9085LSR3
Designed for broadband commercial and industrial applications with
frequencies from 865 to 895 MHz. The high gain and broadband performance
of this device make it ideal for large -- signal, common -- source amplifier
applications in 26 volt base station equipment.
• Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 700 mA
IS--95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 20 Watts
Power Gain — 17.9 dB
Efficiency — 28%
Adjacent Channel Power —
750 kHz: --45.0 dBc @ 30 kHz BW
1.98 MHz: --60.0 dBc @ 30 kHz BW
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 90 Watts CW
Output Power
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
880 MHz, 90 W, 26 V
LATERAL N--CHANNEL
RF POWER MOSFET
CASE 465A--06, STYLE 1
NI--780S
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
-- 0.5, +65
Vdc
Gate--Source Voltage
VGS
-- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
250
1.43
W
W/°C
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value
Unit
RθJC
0.7
°C/W
ARCHIVE INFORMATION
ARCHIVE INFORMATION
N--Channel Enhancement--Mode Lateral MOSFET
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
© Freescale Semiconductor, Inc., 2008, 2010. All rights reserved.
Freescale Semiconductor
RF Product Device Data
MRF9085LSR3
1
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M1 (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 μAdc)
VGS(th)
2.0
—
4.0
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 700 mAdc)
VGS(Q)
—
3.7
—
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
—
0.19
0.4
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 6 Adc)
gfs
—
8.0
—
S
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
73
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
2.9
—
pF
Characteristic
On Characteristics
Dynamic Characteristics (1)
1. Part is internally input matched.
(continued)
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Off Characteristics
MRF9085LSR3
2
Freescale Semiconductor
RF Product Device Data
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Two--Tone Common--Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
Gps
17
17.9
—
dB
Two--Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
η
36
40
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
IMD
—
--31
--28
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
IRL
—
--21
--9
dB
Two--Tone Common--Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
Gps
—
17.9
—
dB
Two--Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
η
—
40.0
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
IMD
—
--31
—
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
IRL
—
--16
—
dB
Power Output, 1 dB Compression Point, CW
(VDD = 26 Vdc, IDQ = 700 mA,
f1 = 880.0 MHz)
P1dB
—
105
—
W
Common--Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 90 W CW, IDQ = 700 mA,
f1 = 880.0 MHz)
Gps
—
17.5
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 90 W CW, IDQ = 700 mA,
f1 = 880.0 MHz)
η
—
51
—
%
P1dB
—
105
—
W
Power Output, 1 dB Compression Point, CW (1)
(VDD = 26 Vdc, IDQ = 700 mA,
f1 = 960 MHz)
1. These values are derived from a 960 MHz optimized test fixture. Values are not applicable to Figures 1 and 2.
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Functional Tests (In Freescale Test Fixture, 50 ohm system)
MRF9085LSR3
Freescale Semiconductor
RF Product Device Data
3
B1
B3
B2
+
C7
C8
C9
C16
L1
VDD
+
+
+
+
C17
C18
C19
L2
C11
RF
INPUT
Z11
C6
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
C10
ARCHIVE INFORMATION
C1
C4
B1, B2, B3
C1, C9, C15, C16
C3
C4, C13
C5, C6, C12
C7, C17, C18, C19
C8
C10, C11
C14
L1
L2
N1, N2
WB1, WB2
Z1
Z2
Z3
Z4
Z5
Z12 Z13 Z14
C3
C5
Z15
Z16
C12
Z17 Z18
Z19
C13
C15
C14
Z20
DUT
Short Ferrite Beads, Surface Mount
47 pF Chip Capacitors, ATC
5.6 pF Chip Capacitor, ATC
0.8 -- 8.0 Variable Capacitors, Gigatrim
8.2 pF Chip Capacitors, ATC
10 mF, 35 V Tantalum Surface Mount Capacitors, Kemet
20 K pF Chip Capacitor, ATC
16 pF Chip Capacitors, ATC
0.6 -- 4.5 Variable Capacitor, Gigatrim
7.15 nH Inductor, Coilcraft
17.5 nH Inductor, Coilcraft
N--Type Panel Mount, Stripline, M/A--Com
5 Mil BeCu Shim (0.225 x 0.525)
0.219″ x 0.080″ Microstrip
0.150″ x 0.080″ Microstrip
0.851″ x 0.080″ Microstrip
0.125″ x 0.220″ Microstrip
0.123″ x 0.220″ Microstrip
Z6
Z7
Z8
Z9
Z10
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
Z19
Z20
PCB
0.076″ x 0.220″ Microstrip
0.261″ x 0.220″ Microstrip
0.220″ x 0.630″ x 0.200″ Taper
0.240″ x 0.630″ Microstrip
0.060″ x 0.630″ Microstrip
0.067″ x 0.630″ Microstrip
0.233″ x 0.630″ Microstrip
0.630″ x 0.220″ x 0.200″ Taper
0.200″ x 0.220″ Microstrip
0.055″ x 0.220″ Microstrip
0.088″ x 0.220″ Microstrip
0.226″ x 0.220″ Microstrip
0.868″ x 0.080″ Microstrip
0.129″ x 0.080″ Microstrip
0.223″ x 0.080″ Microstrip
Arlon GX--0300--55--22, 30 mils
εr = 2.55
Figure 1. 865--895 MHz Broadband Test Circuit Schematic
RF
OUTPUT
ARCHIVE INFORMATION
VGG
+
MRF9085LSR3
4
Freescale Semiconductor
RF Product Device Data
B1
B3
C8
B2
C6
C9
C3
C4
C5
WB2
CUTOUT
L1
C16
C18
L2
WB1
C1
ARCHIVE INFORMATION
C11
V DD
C19
C17
C15
C12
C14
C10
C13
MRF9085
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact
on form, fit or function of the current product.
Figure 2. 865--895 MHz Broadband Test Circuit Component Layout
ARCHIVE INFORMATION
C7
VGG
MRF9085LSR3
Freescale Semiconductor
RF Product Device Data
5
G ps , POWER GAIN (dB)
η
17
40
VDD = 26 Vdc
Pout = 90 W (PEP)
IDQ = 700 mA
Two--Tone, 100 kHz Tone Spacing
16
15
35
--28
--30
14
13
12
11
IMD
--32
--34
VSWR
860
865
870
875
880
885
f, FREQUENCY (MHz)
890
895
900
--36
2.00
1.75
1.50
1.25
1.00
40
G ps , POWER GAIN (dB)
17
20
15
η
13
11
9
7
0
VDD = 26 Vdc
IDQ = 700 mA
f1 = 880.0 MHz
f2 = 880.1 MHz
--20
--40
IMD
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
--60
--10
--20
--40
7th Order
--50
--60
--70
60
19
50
17
16
40
15
30
14
13
12
η
1
VDD = 26 Vdc
IDQ = 700 mA
f = 880 MHz
Single Tone
10
100
Pout, OUTPUT POWER (WATTS) CW AVG.
Figure 6. Power Gain, Efficiency versus Output
Power
1
10
100
Figure 5. Intermodulation Distortion Products
versus Output Power
20
Gps, POWER GAIN (dB)
17
5th Order
Pout, OUTPUT POWER (WATTS) PEP
η, DRAIN EFFICIENCY (%)
Gps
3rd Order
--30
Figure 4. Power Gain, Efficiency, IMD versus
Output Power
18
VDD = 26 Vdc
IDQ = 700 mA
f1 = 800.0 MHz
f2 = 800.1 MHz
40
Gps
20
η
VDD = 26 Vdc
IDQ = 700 mA
f = 880 MHz
15
--20
13
11
10
9
0
7
0
--40
750 kHz
--60
1.98 MHz
1
--80
10
η, DRAIN EFFICIENCY (%) & ACPR (dB)
Gps
IMD, INTERMODULATION DISTORTION (dBc)
60
19
η , DRAIN EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 3. Class AB Broadband Circuit Performance
Gps, POWER GAIN (dB)
ARCHIVE INFORMATION
45
ARCHIVE INFORMATION
Gps
18
VSWR
50
IMD, INTERMODULATION
DISTORTION (dBc)
19
η , DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Power Gain, Efficiency, ACPR versus
Output Power
MRF9085LSR3
6
Freescale Semiconductor
RF Product Device Data
Zload
f = 865 MHz
f = 895 MHz
Zo = 2 Ω
Zsource
f = 865 MHz
VDD = 26 V, IDQ = 700 mA, Pout = 90 W PEP
f
MHz
Zsource
Ω
Zload
Ω
865
1.35 -- j1.92
1.26 -- j0.15
880
1.33 -- j1.66
1.26 -- j0.10
895
1.28 -- j1.30
1.21 -- j0.20
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
Note:
= Test circuit impedance as measured
from drain to ground.
Zload was chosen based on tradeoffs between gain, output
power, drain efficiency and intermodulation distortion.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
ARCHIVE INFORMATION
ARCHIVE INFORMATION
f = 895 MHz
Z
load
Figure 8. Series Equivalent Source and Load Impedance
MRF9085LSR3
Freescale Semiconductor
RF Product Device Data
7
PACKAGE DIMENSIONS
4X U
(FLANGE)
4X Z
(LID)
B
1
D
bbb
M
T A
M
B
M
N
(LID)
ARCHIVE INFORMATION
ccc
M
M
T A
M
B
R
M
ccc
M
T A
S
(INSULATOR)
bbb
M
T A
M
M
B
M
aaa
M
T A
M
(LID)
B
M
(INSULATOR)
B
M
H
C
3
E
A
A
(FLANGE)
F
T
SEATING
PLANE
CASE 465A--06
ISSUE H
NI--780S
MRF9085LSR3
DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
INCHES
MIN
MAX
0.805
0.815
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
0.365
0.375
0.365
0.375
-----0.040
-----0.030
0.005 REF
0.010 REF
0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
MILLIMETERS
MIN
MAX
20.45
20.70
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
19.61
20.02
19.61
20.02
9.27
9.53
9.27
9.52
-----1.02
-----0.76
0.127 REF
0.254 REF
0.381 REF
ARCHIVE INFORMATION
K
2X
2
B
(FLANGE)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M--1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
MRF9085LSR3
8
Freescale Semiconductor
RF Product Device Data
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
12
Sept. 2008
Description
• Data sheet revised to reflect part status change, p. 1, 2, including use of applicable overlay.
Dec. 2010
• Data sheet archived. Part no longer manufactured.
ARCHIVE INFORMATION
ARCHIVE INFORMATION
• Added Product Documentation and Revision History, p. 9
MRF9085LSR3
Freescale Semiconductor
RF Product Device Data
9
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MRF9085LSR3
Document Number: MRF9085--1
Rev. 12, 9/2008
10
Freescale Semiconductor
RF Product Device Data
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