CMD223 - Custom MMIC
CMD223
9-18 GHz Balanced Low Noise Amplifier
Features
Functional Block Diagram
► Low noise figure
► High gain broadband performance
► Excellent return losses
► Single positive supply voltage
► Small die size
2
1
Description
The CMD223 is a broadband MMIC low noise
amplifier ideally suited for EW and
communication systems where small size and
low power consumption are needed. At 13.5
GHz the device delivers greater than 22 dB of
gain with a corresponding output 1 dB
compression point of +13.5 dBm and a noise
figure of 1.5 dB. The CMD223 is a 50 ohm
matched design eliminating the need for
external DC blocks and RF port matching. The
CMD223 offers full passivation for increased
reliability and moisture protection.
3
4
Electrical Performance - Vdd = 4 V, TA = 25 oC, F = 13.5 GHz
Parameter
Min
Frequency Range
Typ
Max
Units
9 - 18
GHz
Gain
22
dB
Noise Figure
1.5
dB
Input Return Loss
12
dB
Output Return Loss
13
dB
13.5
dBm
93
mA
Output P1dB
Supply Current
ver 1.1 0616
Custom MMIC
300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
CMD223
9-18 GHz Balanced Low Noise Amplifier
Specifications
Absolute Maximum Ratings
Parameter
Recommended Operating Conditions
Rating
Drain Voltage, Vdd
RF Input Power
Channel Temperature, Tch
Power Dissipation, Pdiss
Thermal Resistance
Parameter
Min
Typ
Max
Units
5.5 V
Vdd
3.0
4.0
5.0
V
+23 dBm
Idd
150 °C
93
mA
Electrical performance is measured at specific
test conditions. Electrical specifications are not
guaranteed over all recommended operating conditions.
604 mW
107 °C/W
Operating Temperature
-55 to 85 °C
Storage Temperature
-55 to 150 °C
Operation of this device outside the maximum
ratings may cause permanent damage.
Electrical Specifications - Vdd = 4 V, TA = 25 oC
Parameter
Min
Frequency Range
Gain
Typ
Max
Min
9 - 14
19
Typ
Max
14 - 18
GHz
23
26
Noise Figure
1.4
1.8
Input Return Loss
15
10
dB
Output Return Loss
15
14
dB
10.5
15
dBm
21
22.5
dBm
Output P1dB
Output IP3
Supply Current
65
93
121
17
Units
65
21
25
dB
1.9
2.3
dB
93
121
mA
Gain Temperature
Coefficient
0.017
0.017
dB/°C
Noise Figure Temperature
Coefficient
0.009
0.009
dB/°C
ver 1.1 0616
Custom MMIC
300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
CMD223
9-18 GHz Balanced Low Noise Amplifier
Typical Performance
Broadband Performance, Vdd = 4 V, Idd = 93 mA, TA = 25 oC
25
4.5
S11
20
4
S22
S21
NF
15
3.5
3
5
2.5
0
2
-5
Noise Figure/dB
Response/dB
10
1.5
-10
1
-15
0.5
-20
0
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
Frequency/GHz
Narrow-band Performance, Vdd = 4 V, Idd = 93 mA, TA = 25 oC
25
4.5
20
4
15
3.5
S11
S22
3
Response/dB
S21
NF
5
2.5
0
2
-5
Noise Figure/dB
10
1.5
-10
1
-15
0.5
-20
0
9
10
11
12
13
14
15
16
17
18
Frequency/GHz
Custom MMIC
300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
ver 1.1 0616
CMD223
9-18 GHz Balanced Low Noise Amplifier
Typical Performance
Gain vs. Temperature, Vdd = 4 V
27
+25C
26
+85C
25
-55C
24
23
22
21
Gain/dB
20
19
18
17
16
15
14
13
12
11
10
9
10
11
12
13
14
15
16
15
16
17
18
Frequency/GHz
Noise Figure vs. Temperature, Vdd = 4 V
4
+25C
3.5
+85C
-55C
Noise Figure/dB
3
2.5
2
1.5
1
0.5
0
9
10
11
12
13
14
17
18
Frequency/GHz
Custom MMIC
300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
ver 1.1 0616
CMD223
9-18 GHz Balanced Low Noise Amplifier
Typical Performance
Output Power, Vdd = 4 V, TA = 25 oC
20
19
P1dB
18
Psat
17
16
15
14
Response/dBm
13
12
11
10
9
8
7
6
5
4
3
2
1
0
9
10
11
12
13
14
15
16
17
18
15
16
17
18
Frequency/GHz
P1dB vs. Temperature, Vdd = 4 V
20
19
+25C
18
+85C
17
-55C
16
15
14
P1dB/dBm
13
12
11
10
9
8
7
6
5
4
3
2
1
0
9
10
11
12
13
14
Frequency/GHz
ver 1.1 0616
Custom MMIC
300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
CMD223
9-18 GHz Balanced Low Noise Amplifier
Typical Performance
Output IP3 vs. Temperature, Vdd = 4 V
30
29
+25C
28
+85C
27
-55C
26
25
Output IP3/dBm
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
10
11
12
13
14
15
16
17
18
Frequency/GHz
ver 1.1 0616
Custom MMIC
300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
CMD223
9-18 GHz Balanced Low Noise Amplifier
Mechanical Information
Die Outline (all dimensions in microns)
1529.00
126.50
2
1
2300.00
2148.50
4
3
2173.50
2300.00
Notes:
1. No connection required for unlabeled pads
2. Backside is RF and DC ground
3. Backside and bond pad metal: Gold
4. Die is 85 microns thick
5. DC bond pads are 100 microns square
ver 1.1 0616
Custom MMIC
300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
CMD223
9-18 GHz Balanced Low Noise Amplifier
Pad Description
Pad Diagram
2
1
4
3
Functional Description
Pad
Function
Description
1
RF in
DC blocked and 50 ohm matched
2, 4
Vdd,
Vdd-Optional
Power supply voltage
Decoupling and bypass caps required.
Only one of these pads need be
connected to DC power supply.
3
RF out
DC blocked and 50 ohm matched
Schematic
RF in
Vdd
RF out
GND
Backside
Ground
Connect to RF / DC ground
ver 1.1 0616
Custom MMIC
300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
CMD223
9-18 GHz Balanced Low Noise Amplifier
Applications Information
Assembly Guidelines
The backside of the CMD223 is RF ground. Die attach should be accomplished with electrically and
thermally conductive epoxy only. Eutectic attach is not recommended. Standard assembly procedures
should be followed for high frequency devices. The top surface of the semiconductor should be made
planar to the adjacent RF transmission lines, and the RF decoupling capacitors placed in close proximity
to the DC connections on chip.
RF connections should be made as short as possible to reduce the inductive effect of the bond wire. Use
of a 0.8 mil thermosonic wedge bonding is highly recommended as the loop height will be minimized.
The RF input and output require a double bond wire as shown.
The semiconductor is 85 um thick and should be handled by the sides of the die or with a custom collet.
Do not make contact directly with the die surface as this will damage the monolithic circuitry. Handle
with care.
Assembly Diagram
to Vdd
0.1 uF CHIP CAP
(example: Presidio part
MVB4080X104ZGK5R3L)
RF in
100 pF CHIP CAP
(example: Presidio part
LSA1515B101M2H5R-L)
RF out
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions
should be observed during handling, assembly and test.
ver 1.1 0616
Custom MMIC
300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
CMD223
9-18 GHz Balanced Low Noise Amplifier
Applications Information
Biasing and Operation
The CMD 223 is biased with a positive drain supply. Performance is optimized when the drain voltage
is set to +4 V, though it may be set to a minimum of +2.0 V and a maximum of +5 V.
Turn ON procedure:
1.Apply drain voltage Vdd and set to +4 V
Turn OFF procedure:
1.Turn off drain voltage Vdd
RF power can be applied at any time.
ver 1.1 0616
Custom MMIC
300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
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